TWI646569B - Plasma processing device and operation method of plasma processing device - Google Patents

Abstract

At least two high-frequency power sources that will participate in the plasma The plasma processing apparatus in which the force is supplied to the upper electrode and / or the lower electrode, respectively, and the fluctuation of the reflected wave is reliably detected to prevent the occurrence of abnormal discharge in advance.

Threshold value setting unit (123) After the high-frequency power supply of the high-frequency power supply unit (75) is stabilized, at the time (T3), the first high-frequency power supply unit (65) and the second high-frequency power supply unit (75) match the cutoff threshold value. The bits switch to a relatively low level together. The relatively low level of the cutoff critical value is performed in the first high-frequency power supply section (65) and the second high-frequency power supply section (75) at the same time (from time T3 to T4). . At the time (T4), when the first high-frequency power supply unit (65) starts to increase the power supply for the first time, the threshold value setting unit (123) resets the cutoff threshold value and pulls it up to a relatively high level. Bit. This relatively high level is performed in the first high-frequency power supply section (65) and the second high-frequency power supply section (75), and continues at the same time (from time T4 to T6).

Description

Plasma processing device and operation method of plasma processing device

The present invention relates to a plasma processing apparatus and a method for operating the plasma processing plasma using a high-frequency power to perform processing such as etching on an object to be processed by the plasma.

In the manufacturing process of a flat panel display (FPD) represented by a semiconductor device or a liquid crystal display device, a plasma etching device that performs an etching process on a to-be-processed object such as a semiconductor wafer or a glass substrate, or a film forming process is used. Plasma processing equipment such as plasma CVD equipment.

It is known that, for example, an etching apparatus that supplies high-frequency power to a parallel plate-type electrode and performs etching of a subject by a capacitively-coupled plasma formed between the electrodes is located on one side of an electrode that is disposed opposite to each other. Connected to a high-frequency power source for plasma formation (hereinafter referred to as "source"). When such an etching treatment apparatus is started, a high-frequency power is supplied from a high-frequency power source to an electrode, and a plasma is formed between the electrodes of a parallel plate type. At this time, if a large amount of power is supplied for a short time, for example, the matching of the integrated circuit provided between the high-frequency power source and the electrode cannot be obtained, and a reflected wave from the electrode side toward the high-frequency power source occurs. This reflected wave is a barrier when forming a stable plasma It will also become a precursor of abnormal discharge. Therefore, a soft start control is proposed in which the power supply from a high-frequency power supply is divided into a plurality of stages and the power is gradually supplied to reduce the reflected wave power generated during startup (for example, refer to Patent Document 1).

In addition, in the plasma processing apparatus, abnormal discharge occurs due to various other factors. When abnormal discharge occurs, it may cause adverse effects such as damage to parts or damage to components. Therefore, a 1-frequency plasma processing device that supplies high-frequency power to either the upper electrode or the lower electrode is proposed to detect the abnormal discharge by comparing the reflected wave power with a critical value. If an abnormal discharge is detected, A technique for interrupting and controlling a high-frequency power supply in a predetermined time frame (for example, refer to Patent Document 2).

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2010-135422

[Patent Document 2] International Publication WO2009 / 118920

The occurrence of abnormal discharge in the plasma processing device can be detected by monitoring the variation of the reflected wave from the electrode side to the high-frequency power supply. However, for example, in the method of monitoring the change rate of the reflected wave as an index, it is possible to detect a situation in which the reflected wave is rapidly changed, but it is not possible to detect a situation in which the reflected wave is slowly changed, thereby causing abnormal discharge.

In addition, the content of the proposal of the above-mentioned Patent Document 2 is based on the assumption that the plasma processing device of the 1-frequency system is used. Therefore, it is not considered to be suitable for supplying high-frequency power participating in the plasma from the two high-frequency power sources to the electrodes. 2 frequency type plasma processing device.

Therefore, an object of the present invention is to reliably detect changes in reflected waves in a plasma processing apparatus in which high-frequency power participating in a plasma is supplied to at least two high-frequency power sources to an upper electrode and / or a lower electrode, respectively. And prevent the abnormal discharge from happening in advance.

The plasma processing apparatus of the present invention includes: a processing container that houses the object to be processed; a plurality of high-frequency power sources for outputting high frequencies that participate in the plasma generated in the processing container; and a plurality of reflected wave detection sections that respectively detect orientations. The reflected wave of the plurality of high-frequency power sources; the power control unit that controls the output of the plurality of high-frequency power sources; and the interruption control unit that the detected value of the reflected wave in any one of the plurality of high-frequency power sources exceeds When the cut-off threshold for the high-frequency power source is set in advance, the supply of high-frequency power to all of the plurality of high-frequency power sources is interrupted; The timing of changing the output or the timing of changing the output, set all the aforementioned cutoff thresholds to a relatively high level, and switch all the aforementioned cutoff thresholds after the supply of all the plurality of high-frequency power sources is stabilized. Into a relatively low level.

The plasma processing apparatus of the present invention, as the plurality of high-frequency power sources, includes at least a first high-frequency power source and a second high-frequency power source. A high frequency different from the first high-frequency power source is provided; the plurality of reflected wave detection units include a first reflected wave detection unit that detects a reflected wave toward the first high-frequency power source; and a second reflected wave detection The detection unit detects a reflected wave toward the second high-frequency power source, and the blocking control unit is one of a detection value of the reflected wave of the first high-frequency power source or a detection value of the reflected wave of the second high-frequency power source. When the predetermined cutoff thresholds are set in advance, the high-frequency supply of both the first high-frequency power supply and the second high-frequency power supply is blocked, and the threshold setting unit may be set at the first In either of the high-frequency power supply or the second high-frequency power supply, the timing at which high-frequency supply is started or the output is changed is set to a relatively high level together with the cutoff threshold value. After the high-frequency power supply of the high-frequency power supply and the second high-frequency power supply is stabilized, it is switched to a relatively low level together with the level of the cutoff threshold value.

In the plasma processing device of the present invention, during the process of raising the plasma, the power control unit may also gradually increase the high-frequency output from the first high-frequency power source and the second high-frequency power source, respectively. Soft start control.

In the plasma processing apparatus of the present invention, the power control unit may form a preset value for the detection value of the reflected wave in the first reflected wave detection unit and the detection value of the reflected wave in the second reflected wave detection unit. After being lower than the critical value for raising, the controller is controlled so as to increase the high-frequency output from the first high-frequency power supply.

In the plasma processing apparatus of the present invention, the threshold value setting unit may be a detection value of a reflected wave in the first reflected wave detection unit. And the detection value of the reflected wave of the second reflected wave detection unit is equal to or less than a preset threshold value for lifting, and until the high-frequency output from the first high-frequency power source is increased, the blocking threshold value is increased. Set to the aforementioned relatively low level.

In the plasma processing apparatus of the present invention, the power control unit may form a preset value for the detection value of the reflected wave in the first reflected wave detection unit and the detection value of the reflected wave in the second reflected wave detection unit. The controller is controlled so that the high-frequency output from the second high-frequency power source is increased after the threshold value for raising of the electric current is not more than.

In the plasma processing apparatus of the present invention, the threshold value setting unit may be set in advance to form a detection value of the reflected wave in the first reflected wave detection unit and a detection value of the reflected wave in the second reflected wave detection unit. After the threshold value for raising is lower than the threshold value for increasing the high-frequency output from the second high-frequency power source, the blocking threshold value is set to the relatively low level.

The plasma processing apparatus of the present invention may be 25% or more of the rated electric power value output from the first high-frequency power supply or the second high-frequency power supply, respectively, as the threshold value for blocking at the relatively high level.

The plasma processing apparatus of the present invention may be the above-mentioned relatively low level cut-off threshold value which may also be 5% or less of the rated power value output from the first high-frequency power source or the second high-frequency power source, respectively.

The plasma processing apparatus of the present invention may have the same setting period of the relatively low level of the blocking threshold value set for the first high-frequency power supply or the second high-frequency power supply, respectively.

The plasma processing apparatus of the present invention may have the same setting period of the relatively high level of the cutoff threshold value set for the first high-frequency power supply or the second high-frequency power supply, respectively.

The method for operating a plasma processing apparatus of the present invention includes: a processing container that houses a body to be processed; a plurality of high-frequency power sources for outputting high frequencies participating in the plasma generated in the processing container; and a plurality of reflected wave detection sections. Detecting the reflected waves toward the plurality of high-frequency power sources separately; the power control section controlling the output of the plurality of high-frequency power supplies; and the interruption control section where the detection value of the reflected waves in any one of the plurality of high-frequency power supplies exceeds When the cut-off threshold value for each high-frequency power source is set in advance, a plasma processing device for blocking the supply of all the plurality of high-frequency power sources with high frequency to generate plasma in the processing container to process the object to be processed Operation method.

The operation method of the plasma processing apparatus of the present invention is any one of the plurality of high-frequency power sources described above, and may further include setting all the above-mentioned cutoff thresholds at a timing of starting to supply a high frequency or a timing of changing an output. A step of achieving a relatively high level; and a step of switching all of the aforementioned cutoff critical values to a relatively low level after the supply of all the plurality of high-frequency power sources with high frequency is stabilized.

The operation method of the plasma processing apparatus of the present invention, when changing the output of the high frequency, may also include: measuring the power value of the reflected waves toward the plurality of high frequency power sources; and determining that the output of the high frequency is included. Whether or not the detection values of reflected waves of all high-frequency power sources of a high-frequency power source are changed below a preset threshold; and after the aforementioned detected values of reflected waves of all high-frequency power sources are below a preset threshold, Make The aforementioned project of changing the output of a high-frequency power supply.

According to the present invention, at any timing of starting the supply of high frequency or changing it at any of a plurality of high-frequency power sources, all cutoff critical values are set to a relatively high level, and all of the plurality of high-frequency power sources are set at a relatively high level. After the high-frequency power supply is stabilized, all the cut-off thresholds are switched to a relatively low level, which can reliably detect the fluctuation of the reflected wave and prevent abnormal discharge from occurring in the first place.

1‧‧‧handling container

1a‧‧‧ bottom wall

1b‧‧‧ side wall

1c‧‧‧ Cover

11‧‧‧ base

12‧‧‧ substrate

13, 14‧‧‧sealing members

15‧‧‧Insulating member

31‧‧‧Nozzle

33‧‧‧Gas diffusion space

35‧‧‧ gas outlet

37‧‧‧Gas inlet

39‧‧‧Process gas supply pipe

41‧‧‧ Valve

43‧‧‧mass flow controller

45‧‧‧Gas supply source

51‧‧‧Exhaust opening

53‧‧‧Exhaust pipe

53a‧‧‧ flange

55‧‧‧APC valve

57‧‧‧Exhaust

61‧‧‧Power line

63‧‧‧ Matching Box (M.B.)

65‧‧‧The first high-frequency power supply unit

71‧‧‧Power line

73‧‧‧Match Box (M.B.)

75‧‧‧The second high-frequency power supply unit

100‧‧‧ Plasma Etching Device

[FIG. 1] A cross-sectional view schematically showing a configuration of a plasma etching apparatus according to an embodiment of the present invention.

Fig. 2 is a block diagram showing a hardware configuration of a control unit of a plasma etching apparatus according to an embodiment of the present invention.

[Fig. 3] A block diagram showing the hardware configuration of the module controller of Fig. 2. [Fig.

[Fig. 4] A block diagram illustrating the relationship between the configuration of two high-frequency power supply units and the functional configuration of a module controller.

[Fig. 5] A timing chart showing an example of the operation method of the plasma processing apparatus according to the embodiment of the present invention.

6 is a flowchart showing an example of a procedure of a method of operating a plasma processing apparatus according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[First Embodiment]

FIG. 1 is a sectional view showing a schematic configuration of a plasma etching apparatus as a first embodiment of a processing apparatus of the present invention. As shown in FIG. 1, the plasma etching apparatus 100 is a capacitively-coupled parallel flat-plate plasma etching apparatus configured to etch an object to be processed, for example, a glass substrate for FPD (hereinafter simply referred to as a “substrate”) S. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, and a plasma display panel (PDP).

The plasma etching apparatus 100 includes a processing container 1 formed of aluminum having an anodizing treatment (acid-resistant aluminum) on the inner side and formed into a rectangular tube shape. The main body (container body) of the processing container 1 is composed of a bottom wall 1a and four side walls 1b (only two are shown). A lid 1c is joined to an upper portion of the main body of the processing container 1. Although not shown in the drawings, a gate valve for opening the substrate transfer and sealing the substrate transfer opening are provided on the side wall 1b. The processing container 1 is grounded.

The cover 1c is configured to be capable of being opened and closed with respect to the side wall 1b by a switching mechanism (not shown). In a state where the lid body 1 c is closed, the joint portion between the lid body 1 c and each side wall 1 b is sealed with an O-ring 3 to maintain the airtightness in the processing container 1.

A frame-shaped insulating member 10 is disposed on the bottom of the processing container 1. A mounting table on which the substrate S can be placed is provided on the insulating member 10 Base 11 The base 11 which is also a lower electrode is provided with a base material 12. The base material 12 is formed of a conductive material such as aluminum or stainless steel (SUS). The base material 12 is arranged on the insulating member 10, and a sealing member 13 such as an O-ring is provided at a joint portion of the two members to maintain airtightness. The airtightness is also maintained between the insulating member 10 and the bottom wall 1 a of the processing container 1 by a sealing member 14 such as an O-ring. The outer periphery of the side portion of the base material 12 is surrounded by the insulating member 15. This can ensure the insulation of the side surface of the base 11 and prevent abnormal discharge during plasma processing.

Above the base 11, a shower head 31 is provided which is parallel to the base 11 and has an upper electrode function. The shower head 31 is a cover 1 c supported on the upper portion of the processing container 1. The shower head 31 is hollow, and a gas diffusion space 33 is provided in the shower head 31. Further, a plurality of gas discharge holes 35 are formed on the lower surface of the shower head 31 (the surface opposite to the base 11) to discharge the processing gas. The shower head 31 forms a pair of parallel plate electrodes together with the base 11.

A gas introduction port 37 is provided near the center of the upper portion of the shower head 31. A process gas supply pipe 39 is connected to the gas introduction port 37. The process gas supply pipe 39 is connected to a gas supply source 45 for supplying an etching process gas via two valves 41 and 41 and a mass flow controller (MFC) 43. The processing gas may be a rare gas such as an Ar gas in addition to a halogen-based gas or an O ₂ gas.

An exhaust opening 51 is formed in the bottom wall 1 a in the processing container 1 and penetrates through a plurality of locations (for example, eight locations). An exhaust pipe 53 is connected to each of the exhaust openings 51. The exhaust pipe 53 has a convex end The edge portion 53a is fixed in a state where an O-ring (not shown) is interposed between the flange portion 53a and the bottom wall 1a. The exhaust pipe 53 is provided with an APC valve 55, and the exhaust pipe 53 is connected to an exhaust device 57. The exhaust device 57 is provided with a vacuum pump such as a turbo molecular pump, whereby the inside of the processing container 1 can be evacuated to a predetermined reduced pressure environment.

A power supply line 61 is connected to the shower head 31. The power supply line 61 is connected to a first high-frequency power source 65 for plasma formation (for a source) via a matching box (M.B.) 63. This makes it possible to supply high-frequency power of, for example, 13.56 MHz from the first high-frequency power supply unit 65 to the shower head 31 as an upper electrode.

A power supply line 71 is connected to the base material 12 of the base 11. The power supply line 71 is connected to a second high-frequency power supply unit 75 for bias voltage via a matching box (M.B.) 73. This makes it possible to supply high-frequency power of, for example, 3.2 MHz from the second high-frequency power supply unit 75 to the base 11 as the lower electrode. The power supply line 71 is introduced into the processing container 1 through a power supply opening 77 formed as a through opening in the bottom wall 1 a.

In the matching box (MB) 63, there is provided a matching circuit (not shown) connected at one end side to the first high-frequency power supply section 65 via, for example, a coaxial cable, and the other end side of the matching circuit is connected as an upper electrode. Of the head 31. The matching circuit is to adjust the impedance (matching) between the load (plasma) and the first high-frequency power supply unit 65 in accordance with the impedance of the plasma, so as to attenuate the reflected wave generated in the circuit of the plasma etching apparatus 100. task.

In the matching box (M.B.) 73, there is an end-to-side passage example A matching circuit (not shown), such as a coaxial cable, connected to the second high-frequency power supply unit 75 is connected to the base 11 as a lower electrode at the other end side. The matching circuit is to adjust the impedance (matching) between the load (plasma) and the second high-frequency power supply unit 75 according to the impedance of the plasma, so as to attenuate the reflected waves generated in the circuit of the plasma etching apparatus 100. task.

Each component of the plasma etching apparatus 100 is configured to be controlled by being connected to the control unit 80. Referring to FIG. 2, the control unit 80 of the substrate processing system including the plasma etching apparatus 100 according to this embodiment will be described. FIG. 2 is a block diagram showing the hardware configuration of the control unit 80. As shown in FIG. 2, the control unit 80 is provided with: an equipment controller (hereinafter referred to as “EC”) 81; a plurality (though only two are shown in FIG. 2, they are not (Limited to this) Module Controller (hereinafter referred to as "MC") 83; and Switch Hub (HUB) 85, which connects EC81 and MC83.

The EC81 is a main control unit (main control unit) that collectively controls a plurality of MC83s and controls the overall operation of the substrate processing system. A plurality of MC83s are each a sub-control unit (slave controller) that controls the operation of each module including the plasma etching apparatus 100 under the control of EC81. The switching hub 85 switches the MC83 connected to the EC81 in response to a control signal from the EC81.

EC81 is a control program for processing various types of substrates S performed in a substrate processing system, and records processing condition data. The processing program sends control signals to each MC83 to control the overall operation of the substrate processing system.

The control unit 80 further includes a subnet 87, a DIST (Distribution) board 88, and an input / output (hereinafter referred to as I / O) module 89. Each MC83 is connected to the I / O module 89 via a subnet 87 and a DIST board 88.

The I / O module 89 has a plurality of I / O sections 90. The I / O section 90 is connected to each terminal device of each module including the plasma etching apparatus 100. Although not shown, an I / O board for controlling input / output of digital signals, analog signals, and serial signals is provided in the I / O section 90. Control signals for each terminal device are output from the I / O section 90, respectively. The output signals from the terminal devices are output to the I / O section 90, respectively. The plasma etching apparatus 100 includes, for example, a mass flow controller (MFC) 43, an APC valve 55, an exhaust device 57, two matching boxes 63, 73, and two high-frequency power supply units (first high-frequency The power supply section 65, the second high-frequency power supply section 75), and the like serve as terminal devices connected to the I / O section 90.

The EC81 is connected to a computer 93 (Manufacturing Execution System) that is a MES (Manufacturing Execution System) that manages the entire manufacturing process of a factory in which a substrate processing system is installed via a LAN (Local Area Network) 91. The computer 93 cooperates with the control unit 80 of the substrate processing system, and feeds back real-time information about the manufacturing process of the factory to the backbone business system, and executes the judgment of the manufacturing process in consideration of the overall load of the factory. The computer 93 may also be connected to an information processing organization such as another computer 95.

Next, referring to Figure 3, the hardware configuration of MC83 will be described. An example. The MC83 is provided with a main control unit 101, an input device 102 such as a keyboard or a mouse, an output device 103 such as a printer, a display device 104, a memory device 105, an external interface 106, and a bus connecting these devices to each other. 107. The main control unit 101 includes a CPU (Central Processing Unit) 111, a RAM (Random Access Memory) 112, and a ROM (Read Only Memory) 113. If the storage device 105 is a person capable of storing information, it is not limited to any form, and may be, for example, a hard disk device or an optical disk device. In addition, the memory device 105 records information on a computer-readable recording medium 115, and the information can be read by the recording medium 115. If the recording medium 115 is a person capable of recording information, it is not limited to any form, and may be, for example, a hard disk, an optical disk, a flash memory, or the like. The recording medium 115 may be a recording medium that records a processing program of the plasma etching method according to this embodiment.

In MC83, the CPU 111 uses the RAM 112 as a work area and executes a program stored in the ROM 113 or the memory device 105, whereby the plasma etching process for the substrate S can be performed in the plasma etching apparatus 100 of this embodiment. In addition, the hardware configuration of the EC81 or the computers 93 and 95 shown in FIG. 2 is also substantially the same as that shown in FIG. 3.

Next, the relationship between the configuration of the first high-frequency power supply section 65 and the second high-frequency power supply section 75 and the functional configuration of the MC 83 will be described with reference to FIG. 4. FIG. 4 is a functional block diagram showing an excerpt of the configuration of the first high-frequency power supply section 65 and the second high-frequency power supply section 75 and the functional configuration of the MC83. In addition, in the following description, the hardware structure of MC83 is formed as shown in FIG. 3, and reference may be made to the symbols in FIG.

As shown in FIG. 4, the MC83 is equipped with a power control unit 121, The interruption control unit 122 and the threshold setting unit 123. These are implemented by the CPU 111 using the RAM 112 as a work area and executing software (programs) stored in the ROM 113 or the memory device 105.

The first high-frequency power supply unit 65 includes an oscillating unit 131, a computation amplifier unit 132, a power amplifier unit 133, and a sensing unit 134. Here, the oscillating section 131, the arithmetic amplification section 132, and the power amplification section 133 constitute a high-frequency power supply 135.

The second high-frequency power supply unit 75 includes an oscillating unit 141, a computation amplifier unit 142, a power amplifier unit 143, and a sensing unit 144. Here, the oscillating section 141, the arithmetic amplification section 142, and the power amplification section 143 constitute a high-frequency power supply 145.

The oscillating sections 131 and 141 generate high-frequency signals. The frequency of this high frequency signal can be set in accordance with the high frequency supplied to the plasma load.

The operational amplifiers 132 and 142 control the amplitude of the high-frequency signal according to the command signal from the power control unit 121.

The power amplifier sections 133 and 143 receive output signals from the operational amplifier sections 132 and 142 to amplify the power.

The sensing sections 134 and 144 detect the progressive wave power PF sent from the first high-frequency power supply section 65 or the second high-frequency power supply section 75 to the load (plasma), and from the load (plasma) toward the first height, respectively. The reflected-wave power REF of the high-frequency power supply section 65 or the second high-frequency power supply section 75.

The sensing units 134 and 144 detect the wave power PF and the reflected wave power REF, and the detection signals and the reflected wave power of the wave power PF are detected. The detection signal of REF is sent to the power control unit 121, the interruption control unit 122, and the threshold setting unit 123.

The power control unit 121 sends control signals to the oscillating units 131 and 141 of the first high-frequency power supply unit 65 or the second high-frequency power supply unit 75 or the operational amplifier based on a processing program or parameters stored in the memory device 105 in advance. The units 132 and 142 control the power supply so that a desired plasma etching process is performed in the plasma etching apparatus 100. For example, the power control unit 121 receives the wave power PF from the sensing units 134 and 144 as a feedback signal, and performs feedback control based on the deviation of the feedback signal from the power command value. The first high-frequency power supply unit 65 or the second The output power of the high-frequency power supply unit 75 is formed as a power command value and controlled. In the feedback control of the power control unit 121, a differential signal of the power command value and the progressive wave power PF is generated as a command signal for controlling output power, and is input to the operational amplifiers 132 and 142. On the other hand, in the operational amplifier sections 132 and 142, high-frequency signals forming a reference are also input from the oscillation sections 131 and 141. Thereby, the operational amplifiers 132 and 142 are controlled so that the electric power supplied to the load (plasma) is formed as the electric power command value. The output signals of the operational amplifiers 132 and 142 are formed into predetermined power by the power amplifiers 133 and 143 and sent to the head 31 and the base 11 through the matching boxes 63 and 73, respectively.

In addition, the power control unit 121 receives the detection signal of the reflected wave power REF from the sensing units 134 and 144, performs droop control as needed, and controls the overcurrent or overvoltage with the increase of the reflected wave power REF. Protect power. In addition, To control the output power, the power control unit 121 may be controlled by controlling the output voltage based on the voltage command value.

The interruption control unit 122 receives the detection signal of the reflected wave power REF from the sensing units 134 and 144, and performs an interruption process of the high-frequency power supply of the first high-frequency power supply unit 65 or the second high-frequency power supply unit 75. Specifically, the blocking control unit 122 compares the detection signal of the reflected wave power REF detected by the sensing unit 134 or the sensing unit 144 with the threshold value for blocking, and the magnitude of any of the reflected wave power REF exceeds When the cut-off critical value is used, a cut-off command signal is sent to stop the operation of both the oscillation section 131 and the oscillation section 141. By stopping the operation of the oscillating sections 131 and 141, the power supply from the first high-frequency power supply section 65 and the second high-frequency power supply section 75 to the load (plasma) is temporarily stopped. In addition, as the interruption control of the interruption control unit 122, instead of stopping the power supply, it is also possible to perform control to reduce the amount of electric power to be supplied. For example, instead of stopping the operation of the oscillation sections 131 and 141, the power control section 121 may suppress the output.

The threshold value setting unit 123 sets the threshold value of the reflected wave power REF to be referred to when the blocking control unit 122 performs blocking processing. The threshold value can be independently set in the first high-frequency power supply section 65 and the second high-frequency power supply section 75. The cut-off threshold used for the cut-off control of the first high-frequency power supply unit 65 includes at least two types of thresholds that can be set at a relatively high level and a threshold that is relatively low. Similarly, at least two types of cutoff threshold values used for the cutoff control of the second high-frequency power supply unit 75 may be set at a relatively high threshold value and a relatively low threshold value.

In addition, the threshold setting unit 123 sets the cutoff thresholds at the timing of starting the supply of the high frequency or the timing of changing the output from the first high frequency power supply unit 65 or the second high frequency power supply unit 75, respectively. Relatively high level. In addition, the threshold setting unit 123 switches the level of the cutoff threshold to a relatively low level after the supply of high-frequency power from the first high-frequency power source 65 or the second high-frequency power source 75 is stabilized. Bit. Here, the state where the supply of high-frequency power is stable refers to the end of the impedance matching of the matching boxes 63 and 73. For example, the reflected wave power REF detected by the sensing units 134 and 144 is formed below a predetermined threshold (including 0). The meaning of the situation. In addition, the relatively high-level cutoff threshold value is used to avoid the cutoff control by the reflected wave unavoidably generated when the plasma is raised. Therefore, it can be set, for example, from the first high-frequency power supply unit 65 or The second high-frequency power supply unit 75 is in a range of 25% or more of the rated power value, preferably 25% or more and 100% or less. In addition, since the cutoff threshold value at a relatively low level quickly responds to the possibility of reflected waves related to abnormal discharge, it can be set from the first high-frequency power supply section 65 or the second high-frequency power supply. The rated electric power value output by the unit 75 is 5% or less, preferably within the range of 2% or more and 5% or less.

Next, a processing operation of the plasma etching apparatus 100 configured as described above will be described. First, in a state where a gate valve (not shown) is opened, a substrate S, which is an object to be processed, is transferred into a processing container 1 through a chuck of a transfer device (not shown) through a substrate transfer opening and is transferred to a substrate. Block 11. After that, the gate valve is closed, and the inside of the processing container 1 is evacuated to a predetermined vacuum degree by the exhaust device 57.

Next, the valve 41 is opened, and the processing gas is introduced into the gas diffusion space 33 of the shower head 31 from the gas supply source 45 through the processing gas supply pipe 39 and the gas introduction port 37. At this time, the flow rate of the process gas is controlled by the mass flow controller 43. The processing gas introduced into the gas diffusion space 33 is evenly discharged to the substrate S placed on the base 11 through the plurality of gas discharge holes 35, and the pressure in the processing container 1 is maintained at a predetermined value.

In this case, the high-frequency power is supplied from the first high-frequency power supply unit 65 to the shower head 31 via the matching box 63. As a result, a high-frequency electric field is generated between the shower head 31 serving as the upper electrode and the base 11 serving as the lower electrode, so that the processing gas is dissociated and plasmatized. An etching process is performed on the substrate S by this plasma. During the plasma processing, high-frequency power for bias is supplied from the second high-frequency power supply unit 75 to the base 11 via the matching box 73. As a result, ions in the plasma are attracted to the substrate S. A detailed description of a method of controlling high-frequency power supply from the first high-frequency power supply section 65 and the second high-frequency power supply section 75 will be described later.

After the etching process is performed, the supply of high-frequency power from the first high-frequency power supply section 65 and the second high-frequency power supply section 75 is stopped, and after the introduction of gas is stopped, the inside of the processing container 1 is decompressed to a predetermined pressure. Next, the gate valve is opened, and the substrate S is received from a chuck of a transfer device (not shown) from the base 11, and the substrate S is carried out from the substrate transfer opening of the processing container 1. With the above operations, the plasma etching process on the substrate S is completed.

Next, referring to FIG. 5, the first high-frequency power supply unit 65 and the second high-frequency power source 65 when the plasma etching apparatus 100 performs plasma ignition (rising) are performed. A method of controlling the high-frequency power supply of the high-frequency power supply unit 75 will be described. FIG. 5 shows the softness when the high-frequency power is supplied from the first high-frequency power supply unit 65 to the upper electrode (head 31) and from the second high-frequency power supply unit 75 to the lower electrode (base 11), and the plasma is raised. An example of the sequence of start control. FIGS. 5 (a) to (d) relate to power supply from the first high-frequency power supply section 65, and FIGS. 5 (e) to (h) relate to power supply from the second high-frequency power supply section 75.

In the present embodiment, in order to suppress the influence of the reflected wave, the increase in the power supply from the first high-frequency power supply section 65 and the second high-frequency power supply section 75 is divided into two stages, for example. FIG. 5 (a) shows the timing when the first high-frequency power supply unit 65 receives the start signal (ON / OFF signal) transmitted from the MC 83 that controls the operation of the plasma etching apparatus 100. FIG. 5 (e) shows the timing when the second high-frequency power supply unit 75 receives the same start signal.

In addition, FIG. 5 (b) shows the change in the threshold value used for the interruption control of the first high-frequency power supply section 65, and 5 (f) shows the threshold value used for the interruption control of the second high-frequency power supply section 75 The change.

FIG. 5 (c) shows the change in the output of high-frequency power supplied from the first high-frequency power supply section 65 to the upper electrode, and FIG. 5 (g) shows the height of the high-frequency power supplied from the second high-frequency power supply section 75 to the lower electrode Frequency power output changes.

5 (d) shows the diachronic change in the power value of the reflected wave detected by the sensing section 134 on the upper electrode side, and FIG. 5 (h) shows the reflection detected by the sensing section 144 on the lower electrode side. Wave power Change over time.

5 (a) to 5 (h) indicate time.

According to the power supply sequence of this embodiment, first, the first high-frequency power supply unit 65 and the second high-frequency power supply unit 75 receive the start signal by the MC 83 at time T1. The first high-frequency power supply unit 65 is on standby and does not start supplying power to the upper electrode. On the other hand, from the time T1 to the time T2, the second high-frequency power supply unit 75 gradually increases the supply power to a predetermined power value lower than the power value during the manufacturing process (hereinafter referred to as "the first stage" ”). At this time, in the second high-frequency power supply unit 75, as shown in FIG. 5 (h), a reflected wave generated on the lower electrode side is transmitted. In this case, by supplying the high-frequency power in stages, the power of the reflected wave is suppressed to be relatively small, for example, attenuated by about 1 to 2 seconds.

The power supplied from the second high-frequency power supply unit 75 reaches the power value at the first stage at time T2. Then, after the time elapses from time T2, the reflected wave toward the second high-frequency power supply section 75 is sufficiently attenuated, and the first power supply is started by the first high-frequency power supply section 65 from time T4 until the time T5 rises Power value to the first stage. At this time, not only the first high-frequency power supply section 65 but also the second high-frequency power supply section 75 that has begun to supply power. Both the first high-frequency power supply section 65 and the second high-frequency power supply section 75 reflect light. The wave will spread. Such reflected waves are also attenuated by the action of the integrated circuit.

Next, consider matching until the reflected wave is sufficiently attenuated At the end of the time interval, the second increase in the power supply of the second high-frequency power supply unit 75 is started from time T7, and the time until time T8 is increased to the second stage power value. In FIG. 5, the power value in the second stage becomes a set power value in the process of the second high-frequency power supply unit 75. In addition, the step of increasing the power supplied by the second high-frequency power supply unit 75 to a set power value at the time of manufacturing is not limited to two steps, and may be three or more steps.

Next, after the reflected wave having increased power supply from the second high-frequency power supply section 75 is attenuated, the second supply power increase of the first high-frequency power supply section 65 is started from time T10, and the time until time T11 is increased to Power value of the second stage. In FIG. 5, the power value in the second stage is a set power value during the manufacturing process of the first high-frequency power supply unit 65. In addition, the step of increasing the power supplied by the first high-frequency power supply unit 65 to a set power value during the manufacturing process is not limited to two steps, and may be three or more steps.

As described above, in the present embodiment, a power supply sequence (soft-start control) is performed in which the high-frequency power in the second high-frequency power supply unit 75 and the first high-frequency power supply unit 65 are gradually increased alternately. Thereby, the plasma etching apparatus 100 can suppress the influence of a reflected wave, and can raise a plasma in a short time as much as possible.

Next, referring to FIG. 5, the setting of the cutoff threshold value referred to when the cutoff control unit 122 performs the cutoff processing will be described. As described above, the cutoff threshold is set by the threshold setting unit 123. Although the magnitude of the cutoff threshold can be independently set for the first high-frequency power supply section 65 and the second high-frequency power supply section 75, the switching between the relatively high level and the relatively low level is in the first position. High-frequency power supply section 65, second high-frequency power The source units 75 are related to each other and performed at the same timing.

First, as shown in FIGS. 5 (b) and 5 (f), the threshold setting unit 123 is in the initial state (up to time T3) in the first high-frequency power source unit 65 and the second high-frequency power source unit 75. The cutoff threshold is set to a relatively high level. This is because relatively large reflected waves tend to occur during the initial rise of the plasma.

Next, after the supply of high-frequency from the second high-frequency power supply section 75 is stabilized, the threshold value setting section 123 is connected to the first high-frequency power supply section 65 and the second high-frequency power supply section 75 at time T3. The level of the cut-off threshold is switched to a relatively low level together. The relatively low level of the cutoff critical value is continued in the first high-frequency power supply section 65 and the second high-frequency power supply section 75 at the same time (from time T3 to T4). The period from time T3 to T4 when the high-frequency power is never changed is to lower the level of the cutoff threshold first to accelerate the response to the reflected wave related to the abnormal discharge, thereby preventing the abnormal discharge from occurring. Not yet.

Next, at time T4, when the first high-frequency power supply unit 65 starts to increase the power supply for the first time, the threshold setting unit 123 resets the cutoff threshold as shown in Figs. 5 (b) and (f). Value and pull up to a relatively high level, respectively. This relatively high level is maintained in the first high-frequency power supply section 65 and the second high-frequency power supply section 75 at the same time (from time T4 to T6). As described above, since the first increase in the power supply of the first high-frequency power supply section 65 is performed from time T4 to T5, during this period, the first high-frequency power supply section 65 and the second high-frequency power supply section 75 The reflected wave power is detected separately. The reflected waves detected by the sensing sections 134 and 144 are related to The second high-frequency power supply unit 75 can perform detection longer than the first high-frequency power supply unit 65 before the power is changed, and ends when the time T5 is slightly exceeded. That is, the matching of the matching circuit will end. Since the time from the time T4 when the power supply is increased by the first high-frequency power supply unit 65 to the time T6 when the matching is completed, an unavoidable reflected wave is generated when the power is changed. The value is set to a relatively high level, which makes the smooth plasma rise.

After the matching of the matching circuit is completed and the power supply of the first high-frequency power supply unit 65 is stabilized, the threshold value setting unit 123 is connected to the first high-frequency power supply unit 65 and the second high-frequency power supply unit 75 at time T6. In the middle, the level of the cutoff threshold is switched to a relatively low level. The relatively low level of the cutoff critical value is performed in the first high-frequency power supply section 65 and the second high-frequency power supply section 75 at the same time (from time T6 to T7). The period from time T6 to T7 when the high-frequency power is never changed is to reduce the level of the cut-off threshold first to accelerate the response to the reflected wave related to the abnormal discharge, thereby preventing the abnormal discharge from occurring. Not yet.

Next, at time T7, when the second high-frequency power supply unit 75 starts to increase the power supply for the second time, the threshold value setting unit 123 resets the cutoff threshold as shown in Figs. 5 (b) and (f). Value and pull up to a relatively high level, respectively. This relatively high level is maintained in the first high-frequency power supply section 65 and the second high-frequency power supply section 75 at the same time (from time T7 to T9). As described above, the second increase in the power supply of the second high-frequency power supply section 75 is performed from time T7 to time T8, and the reflected waves are detected in the first high-frequency power supply section 65 and the second high-frequency power supply section 75, respectively. . The reflected waves detected by the sensing sections 134 and 144 can be detected longer in the second high-frequency power supply section 75 before the power is changed than in the first high-frequency power supply section 65, and when the time exceeds T8 slightly End. That is, the matching of the matching circuit will end. Since the time from the time T7 when the power supply is increased by the second high-frequency power supply section 75 to the time T9 when the matching is completed, an unavoidable reflected wave is generated when the power is changed. The value is set to a relatively high level, which makes the smooth plasma rise.

In a stage after the matching of the matching circuit is completed and the power supply of the second high-frequency power supply unit 75 is stabilized, the threshold value setting unit 123 is connected to the first high-frequency power supply unit 65 and the second high-frequency power supply unit 75 at time T9. In the middle, the level of the cutoff threshold is switched to a relatively low level. The relatively low level of the cutoff critical value is performed in the first high-frequency power supply section 65 and the second high-frequency power supply section 75 at the same time (from time T9 to T10). Since the high-frequency power is not changed from time T9 to T10, by lowering the level of the cutoff threshold first, the response to the reflected wave related to abnormal discharge can be accelerated, thereby preventing abnormal discharge from happening .

Next, at time T10, when the second high-frequency power supply is started from the first high-frequency power supply unit 65, the threshold setting unit 123 resets the cutoff threshold as shown in Figs. 5 (b) and 5 (f). Value and pull up to a relatively high level, respectively. This relatively high level is maintained in the first high-frequency power supply section 65 and the second high-frequency power supply section 75 at the same time (from time T10 to T12). As described above, the second increase in the power supply of the first high-frequency power supply unit 65 is performed from time T10 to time T11. The first high-frequency power supply section 65 and the second high-frequency power supply section 75 each detect a reflected wave. The reflected waves detected by the sensing sections 134 and 144 can be detected longer in the first high-frequency power supply section 65 before the power is changed than in the second high-frequency power supply section 75, and when the time slightly exceeds time T11, End. That is, the matching of the matching circuit will end. During the period from time T10 when the power supply is increased by the first high-frequency power supply unit 65 to time T12 when the matching is completed, unavoidable reflected waves are generated when the power is changed. Therefore, the interruption threshold is first set. The value is set to a relatively high level, which makes the smooth plasma rise.

In the stage after the matching of the matching circuit is completed and the power supply in the second stage of the first high-frequency power supply unit 65 is stabilized, the threshold value setting unit 123 is at time T12 and the first high-frequency power supply unit 65 and the second high-frequency In the power supply unit 75, the level of the cutoff threshold value is switched to a relatively low level. In FIG. 5, the power value in the second stage becomes the set power value in the process of the second high-frequency power supply unit 75. Although not shown in the figure, the relatively low level of the cutoff critical value is in either the first high-frequency power supply section 65 or the second high-frequency power supply section 75 and continues until the next change in power supply ( (Eg, plasma drop).

Although FIG. 5 shows an example in which the plasma is raised in the plasma etching apparatus 100, the reflected wave detected by the first high-frequency power supply unit 65 or the second high-frequency power supply unit 75 exceeds the cutoff threshold value and stops. After the high-frequency power is supplied, when the plasma is raised again, the same soft-start control and threshold value switching as in FIG. 5 can be performed.

Next, referring to FIG. 5 and FIG. One form of the operation method implemented by the apparatus 100 will be described in the order of the threshold value setting performed by the MC83. The flowchart shown in FIG. 6 shows the setting procedure of the threshold value when the high-frequency power supplied from the second high-frequency power supply unit 75 to the base 11 is increased. The setting sequence of the threshold may include steps S1 to S6 in FIG. 6.

First, as a premise, the power control unit 121 of the MC 83 sends a command signal to the oscillation unit 141 and the operational amplifier unit 142 to increase the high-frequency power supplied from the second high-frequency power source unit 75 to the base 11. Accordingly, for example, the high-frequency power for bias is increased from the time T7 in FIG. 5.

The command signal from the power control unit 121 for increasing the high-frequency power may also be sent to the threshold setting unit 123 at the same time. In FIG. 6, in step S1, the threshold setting unit 123 receives the aforementioned command signal. Having received the command signal, next, in step S2, the threshold setting unit 123 sets a threshold for blocking the reflected wave to a relatively high level. The cutoff threshold value includes the threshold value of the reflected wave detected by the sensing section 134 of the first high-frequency power supply section 65 and the reflected wave detected by the sensing section 144 of the second high-frequency power supply section 75. Threshold both. Since the time when the power supply is increased by the second high-frequency power supply unit 75 until the end of the matching, an unavoidable reflected wave is generated when the power changes, so the cutoff threshold is set to the relative value first. A high level can make the smooth plasma rise.

When the high-frequency power for bias voltage reaches a predetermined value (for example, at time T8 in FIG. 5), the power control unit 121 of MC83 stops the increase of high-frequency power supplied from the second high-frequency power source unit 75 to the base 11 (also That is, for To a fixed amount of power), a command signal is sent to the oscillator 141 and the operational amplifier 142. The command signal from the power control unit 121 for stopping and increasing the high-frequency power may also be transmitted to the threshold setting unit 123 at the same time. In step S3 of FIG. 6, the threshold setting unit 123 receives the aforementioned command signal.

Next, in step S4, the threshold setting unit 123 determines whether the source high-frequency power is stable. Specifically, the threshold setting unit 123 refers to the information of the detected value of the reflected wave in the sensing unit 134 via the power control unit 121 to determine whether the detected value of the reflected wave has decayed to, for example, a predetermined threshold or less. For example, when the detection value of the reflected wave falls below a predetermined threshold value, it is determined that the source high-frequency power is stable (Yes), and when the detection value of the reflected wave exceeds the predetermined threshold value, it is determined as a source electrode. High frequency power is unstable (No).

In step S4, when it is determined that the source high-frequency power is stable (Yes), next, in step S5, the threshold setting unit 123 determines whether the bias high-frequency power is stable. Specifically, the threshold setting unit 123 refers to the information of the detected value of the reflected wave in the sensing unit 144 via the power control unit 121 to determine whether the detected value of the reflected wave has decayed to, for example, a predetermined threshold or less. For example, when the detected value of the reflected wave falls below a predetermined threshold value, it is determined that the high-frequency power for bias is stable, and when the detected value of the reflected wave exceeds the predetermined threshold value, it is determined as a bias voltage. High frequency power is unstable (No).

In addition, the order of step S4 and step S5 may be reversed, and in fact, they may be performed simultaneously.

In step S5, when it is determined that the high-frequency power for bias is stable (Yes), next, in step S6, the threshold setting unit 123 sets the cutoff threshold to a relatively low level (for example, from the figure). 5 from time T9 to time T10). The cutoff threshold value includes a threshold value regarding the reflected wave detected by the sensing section 134 of the second high-frequency power supply section 65 and a reflection value detected by the sensing section 144 of the second high-frequency power supply section 75. Threshold both. During the period in which a fixed amount of power is supplied without changing the high-frequency power, the level of the cut-off threshold can be lowered first to speed up the response to the reflected wave related to the abnormal discharge, thereby preventing the abnormal discharge from occurring. Not yet.

By performing the steps S1 to S6 described above, the threshold setting unit 123 can switch the threshold for blocking to a relatively high level and a low level. In this way, by switching the cutoff threshold to a relatively high level and a low level, the following advantages can be obtained. That is, when the output of high-frequency power is changed, a high-level threshold value can be used to avoid power interruption of reflected waves that are not related to abnormal discharge, thereby achieving a smooth rise of the plasma. In addition, during a period in which a fixed amount of power is supplied without changing the output of high-frequency power, a low-level critical value can be used to quickly detect reflected waves related to abnormal discharges, thereby preventing abnormal discharges in advance.

In addition, in FIG. 6, although the setting procedure of the critical value when increasing the high-frequency power value supplied from the second high-frequency power supply unit 75 to the base 11 is shown, the same procedure can be performed for the first high-frequency power. The threshold value is set when the value of the high-frequency power supplied from the power supply unit 65 to the head 31 increases.

In the above, the embodiments of the present invention have been described in detail by examples. The present invention is not limited to the above-mentioned embodiment, and various modifications can be made. For example, in the above-mentioned embodiment, the case where the supply amount of high-frequency power is increased stepwise and the plasma is raised is described as an example, but the supply amount of high-frequency power is decreased stepwise and further The present invention can also be applied to a case where the plasma is lowered.

Moreover, in the above-mentioned embodiment, although the blocking threshold value is set in two stages, that is, a relatively high level and a relatively low level, the blocking threshold value can be set in three or more stages.

Moreover, in the above-mentioned embodiment, although the plasma processing apparatus which supplies high-frequency power to an upper electrode and a lower electrode is respectively targeted, this invention is also applicable to the supply of two or more systems of high-frequency to a lower electrode. Power supply or high-frequency power supplied to two or more systems to the upper electrode.

In the above embodiment, a parallel-plate type plasma etching device is used as an example, but the present invention is a plasma processing device that supplies two or more high-frequency powers to the upper electrode and / or the lower electrode. , It is applicable without special restrictions. It can also be applied to other types of plasma etching devices such as inductively coupled plasma devices. In addition, the present invention is not limited to a dry etching apparatus, and may be similarly applied to a film forming apparatus or an ashing apparatus.

In addition, the present invention is not limited to a case in which a substrate for FPD is used as a processing object, and it is also applicable to a case where a substrate for a semiconductor wafer or a solar cell is used as a processing object.

Claims (13)

A plasma processing device includes: a processing container that houses a subject; a plurality of high-frequency power sources that output high frequencies that participate in the plasma generated in the processing container; and a plurality of reflected wave detection units that respectively detect the direction toward the plurality. Reflected waves of multiple high-frequency power sources; a power control unit that controls the output of the plurality of high-frequency power sources; an interruption control unit that detects values of reflected waves in any one of the plurality of high-frequency power sources that exceeds the respective high-frequency power sources When a predetermined cutoff threshold value is set, the supply of high frequency to all of the plurality of high-frequency power supplies is interrupted; and the threshold value setting unit starts the supply of high-frequency at any one of the plurality of high-frequency power supplies. Or at the timing of changing the output, set all the above-mentioned cutoff critical values to a relatively high level, and for all the plurality of high-frequency power supplies, the detection values of the reflection waves of the plurality of reflection wave detection sections are respectively set in advance. After the threshold value for raising is lower than the threshold value for increasing the output from any one of the plurality of high-frequency power sources, all the above-mentioned blocking thresholds are increased. Switching to a relatively low level. For example, the plasma processing device of the first scope of the patent application, wherein the plurality of high-frequency power sources include at least: a first high-frequency power source; and a second high-frequency power source that outputs a frequency different from the first high-frequency power source. The high frequency includes, as the plurality of reflected wave detection sections, a first reflected wave detection section that detects a reflected wave toward the first high frequency power supply, and a second reflected wave detection section that detects a direction toward the second high frequency power supply. Reflected wave, the blocking control unit is that either the detected value of the reflected wave of the first high-frequency power supply or the detected value of the reflected wave of the second high-frequency power supply exceeds the blocking threshold set in advance. When the value is set, the high-frequency supply of both the first high-frequency power supply and the second high-frequency power supply is blocked. The threshold setting unit is based on the first high-frequency power supply or the second high-frequency power supply. In either case, the timing for starting the supply of high frequency or the timing for changing the output is set to a relatively high level together with the above-mentioned cutoff threshold value, between the first high frequency power supply and the second high frequency power supply. After the high-frequency supply is stable , And switch to a relatively low level together with the level of the threshold value for interruption. For example, in the plasma processing device in the second scope of the patent application, in the process of raising the plasma, the power control unit performs a step of increasing the power from the first high-frequency power source and the second high-frequency power source. The soft-start control with a gradually increasing frequency output. For example, the plasma processing apparatus of the third scope of the patent application, wherein the power control unit is a detection value of the reflected wave in the first reflected wave detection unit and a detection value of the reflected wave in the second reflected wave detection unit, respectively. After the preset threshold value for raising is formed, it is controlled so as to increase the high-frequency output from the first high-frequency power supply. For example, the plasma processing apparatus according to item 4 of the application, wherein the threshold setting unit is a detection value of the reflected wave in the first reflected wave detection unit and a detection value of the reflected wave in the second reflected wave detection unit. After the preset thresholds for raising are each set to be lower than the threshold value for increasing the high-frequency output from the first high-frequency power source, the blocking thresholds are set to the relatively low level. For example, the plasma processing apparatus according to item 5 of the patent application, wherein the power control unit is a detection value of the reflected wave in the first reflected wave detection unit and a detection value of the reflected wave in the second reflected wave detection unit, respectively. After the preset threshold value for raising is set to be equal to or less than the preset threshold value, the high-frequency output from the second high-frequency power source is controlled to be increased. For example, the plasma processing apparatus in the sixth aspect of the patent application, wherein the threshold setting unit is a detection value of the reflected wave in the first reflected wave detection unit and a detection value of the reflected wave in the second reflected wave detection unit. After the preset threshold value for raising or lower is formed, the blocking threshold value is set to the relatively low level while the high-frequency output from the second high-frequency power source is increased. For example, the plasma processing apparatus according to any one of claims 2 to 7, wherein the above-mentioned relatively high cut-off threshold value is output from the first high-frequency power supply or the second high-frequency power supply, respectively. More than 25% of the rated power value. For example, the plasma processing apparatus according to any one of claims 2 to 7, wherein the aforementioned relatively low level cut-off threshold value is output from the first high-frequency power supply or the second high-frequency power supply, respectively. The rated power value is less than 5%. For example, the plasma processing device according to any one of claims 2 to 7, wherein the above-mentioned relatively low standard of the above-mentioned cut-off threshold value set for the first high-frequency power supply or the second high-frequency power supply is set respectively. The bit setting period is the same. For example, the plasma processing device according to any one of claims 2 to 7, wherein the above-mentioned relatively high standard of the above-mentioned cut-off threshold value set for the first high-frequency power supply or the second high-frequency power supply is set respectively. The bit setting period is the same. A method for operating a plasma processing device. The plasma processing device is provided with a processing container that houses a body to be processed, a plurality of high-frequency power sources that output high frequency that participates in the plasma generated in the processing container, and respectively detects orientations. The detected values of the plurality of reflected wave detection sections of the plurality of high-frequency power sources, the power control section that controls the output of the plurality of high-frequency power sources, and the reflected waves in any one of the plurality of high-frequency power sources exceed When a cut-off threshold value is set in advance for each high-frequency power supply, a cut-off control section that blocks the supply of high-frequency power to all of the plurality of high-frequency power supplies, and generates the plasma in the processing container to process the object to be processed. The operating method of the plasma processing device is characterized in that: in any of the plurality of high-frequency power sources, at the timing of starting the supply of high-frequency or the timing of changing the output, all the above-mentioned cutoff critical values are set. A step of achieving a relatively high level; and for all of the plurality of high-frequency power supplies, the detection values of the reflection waves of the plurality of reflection wave detection sections are respectively set in advance After raising a critical value, the period of the output from the high frequency power supply of any one of a plurality of high-frequency power is increased until, by blocking all the switching threshold to a relatively low level of the step. For example, the method for operating a plasma processing device according to item 12 of the patent application, wherein when the output of the high frequency is changed, the method includes: measuring the power value of the reflected waves toward the plurality of high frequency power sources; Whether the detected values of the reflected waves of all high-frequency power sources of a high-frequency power source are changed below a predetermined threshold; and the detected values of the reflected waves of all the high-frequency power sources become a predetermined threshold After the value is lower than that, the aforementioned step of changing the output of the high-frequency power supply is performed.