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TWI432885B - Fourth-order reticle manufacturing method and reticle blank board using same - Google Patents

Fourth-order reticle manufacturing method and reticle blank board using same Download PDF

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Publication number
TWI432885B
TWI432885B TW096106057A TW96106057A TWI432885B TW I432885 B TWI432885 B TW I432885B TW 096106057 A TW096106057 A TW 096106057A TW 96106057 A TW96106057 A TW 96106057A TW I432885 B TWI432885 B TW I432885B
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light
film
transmissive
semi
resist pattern
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TW096106057A
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Chinese (zh)
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TW200736819A (en
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佐野道明
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Ｈｏｙａ股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • H10P76/204—
    • H10P76/2041—
    • H10P76/4085—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

四階光罩製造方法及使用此種方法中之光罩坯料板Fourth-order reticle manufacturing method and reticle blank board using same

本發明係關於一種用以製造液晶顯示器(以下稱為LCDs)或類似裝置之薄膜電晶體(以下稱為TFTs)的四階光罩製造方法，而且還關於一種用在此種製造方法中之光罩坯料板。The present invention relates to a fourth-order mask manufacturing method for manufacturing thin film transistors (hereinafter referred to as TFTs) of liquid crystal displays (hereinafter referred to as LCDs) or the like, and also relates to a light used in such a manufacturing method Cover blank plate.

在日本未審專利公開公報(JP-A)第H09-146259號(以下稱為專利文件1)中，揭露一種光穿透以多層次，如三或更多層次，改變之多階光罩。當形成光學元件的折射表面或反射表面時，可以使用多階光罩。In Japanese Unexamined Patent Publication (JP-A) No. H09-146259 (hereinafter referred to as Patent Document 1), a multi-step mask in which light is penetrated at a plurality of levels, such as three or more levels, is disclosed. When forming a refractive or reflective surface of an optical element, a multi-level mask can be used.

專利文件1中所說明的多階光罩係以下面之方式製造。首先，在形成在透明基板上的金屬化合物膜或類似膜層之上，形成抗蝕膜，並將抗蝕膜施以曝光/描繪和顯影，於是形成第一抗蝕圖案。然後，使用第一抗蝕圖案當作遮罩，蝕刻金屬化合物膜或類似的膜層。然後，再次在金屬化合物膜或類似膜層之上，形成抗蝕膜，並將抗蝕膜施以曝光/描繪和顯影，於是形成第二抗蝕圖案。然後，使用第二抗蝕圖案當作遮罩，再次蝕刻金屬化合物膜或類似膜層。藉由重複預定次數之抗蝕圖案的形成和金屬化合物膜或類似膜層蝕刻，可以得到多階光罩。The multi-step mask described in Patent Document 1 is manufactured in the following manner. First, on a metal compound film or the like formed on a transparent substrate, a resist film is formed, and the resist film is subjected to exposure/drawing and development, thereby forming a first resist pattern. Then, the metal resist film or the like is etched using the first resist pattern as a mask. Then, a resist film is formed again on the metal compound film or the like, and the resist film is subjected to exposure/drawing and development, thereby forming a second resist pattern. Then, using the second resist pattern as a mask, the metal compound film or the like is etched again. A multi-order mask can be obtained by repeating the formation of a resist pattern a predetermined number of times and etching of a metal compound film or the like.

然而，在專利文件1所說明的多階光罩之製造方法 中，因為蝕刻金屬化合物膜或類似膜層的次數，及曝光/描繪，以用於形成蝕刻用之抗蝕圖案的次數彼此相同，所以曝光/描繪的次數增加。例如，為了製造適合光穿透以四個層次改變之四階光罩，需要執行曝光/描繪三次。However, the method of manufacturing the multi-step mask described in Patent Document 1 In the case, since the number of times of etching the metal compound film or the like, and the exposure/drawing, the number of times for forming the resist pattern for etching is the same as each other, the number of times of exposure/drawing is increased. For example, in order to manufacture a fourth-order reticle that is suitable for light penetration to change in four levels, exposure/drawing needs to be performed three times.

因此，本發明之目的係要提供四階光罩製造方法，其可以藉由微影製程製造具有較少描繪次數之四階光罩，而且還可以提供用在此種製造方法中之光罩坯料板。Accordingly, it is an object of the present invention to provide a fourth-order mask manufacturing method which can produce a fourth-order mask having a lower number of times of drawing by a lithography process, and can also provide a mask blank used in such a manufacturing method. board.

(第一觀點)(first point of view)

一種四階光罩的製造方法，該四階光罩包含光遮蔽部分，光穿透部分，及具有不同光穿透率之第一和第二光半穿透部分。該方法包含製備光罩坯料板之步驟，其係由各自具有在蝕刻其他部分時可以抗蝕刻的材料製成之第一光半穿透膜和光遮蔽膜，依序指定形成在透明基板上，然後在光罩坯料板的光遮蔽膜上形成第一抗蝕圖案。第一抗蝕圖案具有對應光穿透部分和第二光半穿透部分之開口區。該方法還包含使用第一抗蝕圖案當作遮罩，蝕刻光遮蔽膜，然後蝕刻第一光半穿透膜，接著再剝除第一抗蝕圖案之步驟。該方法還有包含在透明基板和光遮蔽膜上形成第二光半穿透膜，然後在第二光半穿透膜上形成第二抗蝕圖案之步驟。第二抗蝕圖案具有對應光穿透部分和第一光半穿透部分之開口區。該方法還再包含使用第二抗蝕圖案當作遮罩，蝕刻第二光半穿透膜和光遮蔽膜，然後移除第二抗蝕圖案之步驟，於是形成光穿透部分，光遮蔽部分，第一光半穿透部分，及第二光半穿透部分。A method of manufacturing a fourth-order reticle comprising a light shielding portion, a light transmitting portion, and first and second light semi-transmissive portions having different light transmittances. The method comprises the steps of preparing a mask blank plate, which is formed by a first light semi-transmissive film and a light shielding film each having a material which is resistant to etching when etching other portions, sequentially designated on the transparent substrate, and then sequentially formed on the transparent substrate, and then A first resist pattern is formed on the light shielding film of the mask blank. The first resist pattern has an opening region corresponding to the light penetrating portion and the second light penetrating portion. The method further includes the step of etching the light shielding film using the first resist pattern as a mask, then etching the first light semi-transmissive film, and then stripping the first resist pattern. The method further includes the steps of forming a second light semi-transmissive film on the transparent substrate and the light shielding film, and then forming a second resist pattern on the second light semi-transmissive film. The second resist pattern has an opening region corresponding to the light penetrating portion and the first light semi-transmissive portion. The method further includes the steps of etching the second light semi-transmissive film and the light shielding film using the second resist pattern as a mask, and then removing the second resist pattern, thereby forming a light penetrating portion, a light shielding portion, The first light semi-transmissive portion and the second light semi-transmissive portion.

(第二觀點)(second point of view)

一種四階光罩的製造方法，該四階光罩包含光遮蔽部分，光穿透部分，及具有不同光穿透率之第一和第二光半穿透部分。該方法包含製備光罩坯料板之步驟，其係由各自具有在蝕刻其他部分時可以抗蝕刻的材料製成之第一光半穿透膜和光遮蔽膜，依序指定形成在透明基板上，然後在光罩坯料板的光遮蔽膜上形成第一抗蝕圖案。第一抗蝕圖案具有對應光穿透部分和第二光半穿透部分之開口區。該方法還包含使用第一抗蝕圖案當作遮罩，蝕刻光遮蔽膜，然後剝除第一抗蝕圖案，接著再使用光遮蔽膜當作遮罩，蝕刻第一光半穿透膜之步驟。該方法還有包含在透明基板和光遮蔽膜上形成第二光半穿透膜，然後在第二光半穿透膜上形成第二抗蝕圖案之步驟。第二抗蝕圖案具有對應光穿透部分和第一光半穿透部分之開口區。該方法還再包含使用第二抗蝕圖案當作遮罩，蝕刻第二光半穿透膜和光遮蔽膜，然後移除第二抗蝕圖案之步驟，於是形成光穿透部分，光遮蔽部分，第一光半穿透部分，及第二光半穿透部分。A method of manufacturing a fourth-order reticle comprising a light shielding portion, a light transmitting portion, and first and second light semi-transmissive portions having different light transmittances. The method comprises the steps of preparing a mask blank plate, which is formed by a first light semi-transmissive film and a light shielding film each having a material which is resistant to etching when etching other portions, sequentially designated on the transparent substrate, and then sequentially formed on the transparent substrate, and then A first resist pattern is formed on the light shielding film of the mask blank. The first resist pattern has an opening region corresponding to the light penetrating portion and the second light penetrating portion. The method further includes the steps of etching the light-shielding film using the first resist pattern, etching the light-shielding film, then stripping the first resist pattern, and then using the light-shielding film as a mask to etch the first light-transmissive film . The method further includes the steps of forming a second light semi-transmissive film on the transparent substrate and the light shielding film, and then forming a second resist pattern on the second light semi-transmissive film. The second resist pattern has an opening region corresponding to the light penetrating portion and the first light semi-transmissive portion. The method further includes the steps of etching the second light semi-transmissive film and the light shielding film using the second resist pattern as a mask, and then removing the second resist pattern, thereby forming a light penetrating portion, a light shielding portion, The first light semi-transmissive portion and the second light semi-transmissive portion.

(第三觀點)(third point)

在根據第一或第二觀點之方法中，第二光半穿透膜較佳係由可以被和光遮蔽膜相同的蝕刻物蝕刻掉之材料製成。In the method according to the first or second aspect, the second light semi-transmissive film is preferably made of a material which can be etched away by the same etchant as the light shielding film.

(第四觀點)(fourth point of view)

在根據第一或第二觀點之方法中，第一光半穿透膜較 佳係由含有矽化鉬當作主要組成之材料製成，而光遮蔽膜和第二光半穿透膜各自係由含有鉻當作主要組成之材料製成。In the method according to the first or second aspect, the first light semi-transmissive film is The light system is made of a material containing molybdenum molybdenum as a main component, and the light shielding film and the second light semi-transmissive film are each made of a material containing chromium as a main component.

(第五觀點)(Fifth point of view)

用在根據第一或第二觀點之方法中之光罩坯料板。在透明基板上，光罩坯料板具有製成圖案的膜層，其中包含相互堆疊之第一光半穿透膜和光遮蔽膜，及形成在製成圖案的膜層之上的第二光半穿透膜。A reticle blank used in the method according to the first or second aspect. On a transparent substrate, the reticle blank has a patterned film layer comprising a first light semi-transmissive film and a light shielding film stacked on each other, and a second light half-through formed over the patterned film layer Through the membrane.

(第六觀點)(sixth point of view)

一種四階光罩的製造方法，該四階光罩包含光遮蔽部分，光穿透部分，及具有不同光穿透率之第一和第二光半穿透部分，該方法包含製備光罩坯料板之步驟，其中第一光半穿透膜，第二光半穿透膜，和光遮蔽膜係依序指定形成在透明基板上。第一光半穿透膜和光遮蔽膜係由都具有在蝕刻第二光半穿透膜時可以抗蝕刻的材料製成。該方法還包含在光罩坯料板的光遮蔽膜上形成第一抗蝕圖案之步驟。第一抗蝕圖案具有對應光穿透部分和第一光半穿透部分之開口區。該方法還有包含使用第一抗蝕圖案當作遮罩，蝕刻光遮蔽膜，然後蝕刻第二光半穿透膜，接著再剝除第一抗蝕圖案之步驟。該方法還再包含形成第二抗蝕圖案之步驟，其中第二抗蝕圖案具有對應光穿透部分和第二光半穿透部分之開口區，然後再使用第二抗蝕圖案當作遮罩，蝕刻光遮蔽膜和第一光半穿透膜，然後移除第二抗蝕圖案，於是形成光穿透部分，光遮蔽部分，第一光半穿透 部分，及第二光半穿透部分。A method of manufacturing a fourth-order reticle comprising a light-shielding portion, a light-transmitting portion, and first and second light-transmissive portions having different light transmittances, the method comprising preparing a mask blank The step of the plate, wherein the first light semi-transmissive film, the second light semi-transmissive film, and the light shielding film are sequentially formed on the transparent substrate. The first light semi-transmissive film and the light shielding film are each made of a material that is resistant to etching when etching the second light semi-transmissive film. The method also includes the step of forming a first resist pattern on the light shielding film of the reticle blank. The first resist pattern has an opening region corresponding to the light penetrating portion and the first light semi-transmissive portion. The method further includes the steps of using the first resist pattern as a mask, etching the light shielding film, then etching the second light semi-transmissive film, and then stripping the first resist pattern. The method still further includes the step of forming a second resist pattern, wherein the second resist pattern has an open area corresponding to the light penetrating portion and the second light half penetrating portion, and then using the second resist pattern as a mask Etching the light shielding film and the first light semi-transmissive film, and then removing the second resist pattern, thereby forming a light penetrating portion, a light shielding portion, and the first light is semi-transparent Part, and a second light semi-transparent portion.

(第七觀點)(seventh point of view)

一種四階光罩的製造方法，該四階光罩包含光遮蔽部分，光穿透部分，及具有不同光穿透率之第一和第二光半穿透部分，該方法包含製備光罩坯料板之步驟，其中第一光半穿透膜，第二光半穿透膜，和光遮蔽膜係依序指定形成在透明基板上。第一光半穿透膜和光遮蔽膜係由都具有在蝕刻第二光半穿透膜時可以抗蝕刻的材料製成。該方法還包含在光罩坯料板的光遮蔽膜上形成第一抗蝕圖案之步驟。第一抗蝕圖案具有對應光穿透部分和第一光半穿透部分之開口區。該方法還有包含使用第一抗蝕圖案當作遮罩，蝕刻光遮蔽膜，然後剝除第一抗蝕圖案，接著再使用光遮蔽膜當作遮罩，蝕刻第二光半穿透膜之步驟。該方法還再包含形成第二抗蝕圖案之步驟，其中第二抗蝕圖案具有對應光穿透部分和第二光半穿透部分之開口區，然後再使用第二抗蝕圖案當作遮罩，蝕刻光遮蔽膜和第一光半穿透膜，然後移除第二抗蝕圖案，於是形成光穿透部分，光遮蔽部分，第一光半穿透部分，及第二光半穿透部分。A method of manufacturing a fourth-order reticle comprising a light-shielding portion, a light-transmitting portion, and first and second light-transmissive portions having different light transmittances, the method comprising preparing a mask blank The step of the plate, wherein the first light semi-transmissive film, the second light semi-transmissive film, and the light shielding film are sequentially formed on the transparent substrate. The first light semi-transmissive film and the light shielding film are each made of a material that is resistant to etching when etching the second light semi-transmissive film. The method also includes the step of forming a first resist pattern on the light shielding film of the reticle blank. The first resist pattern has an opening region corresponding to the light penetrating portion and the first light semi-transmissive portion. The method further includes etching the light shielding film using the first resist pattern as a mask, then stripping the first resist pattern, and then etching the second light semi-transmissive film using the light shielding film as a mask step. The method still further includes the step of forming a second resist pattern, wherein the second resist pattern has an open area corresponding to the light penetrating portion and the second light half penetrating portion, and then using the second resist pattern as a mask Etching the light shielding film and the first light semi-transmissive film, and then removing the second resist pattern, thereby forming a light penetrating portion, a light shielding portion, a first light semi-transmissive portion, and a second light semi-transmissive portion .

(第八觀點)(eighth point of view)

在根據第六或第七觀點之方法中，第一光半穿透膜和光遮蔽膜最好可以藉由相同的蝕刻物蝕刻。In the method according to the sixth or seventh aspect, the first light semi-transmissive film and the light shielding film are preferably etched by the same etchant.

(第九觀點)(ninth point of view)

在根據第八觀點之方法中，第二光半穿透膜較佳係由含有矽化鉬當作主要組成之材料製成，而第一光半穿透膜 和光遮蔽膜各自係由含有鉻當作主要組成之材料製成。In the method according to the eighth aspect, the second light semi-transmissive film is preferably made of a material containing molybdenum molybdenum as a main component, and the first light semi-transmissive film Each of the light shielding films is made of a material containing chromium as a main component.

(第十觀點)(Tenth point of view)

用在根據第六，第七，或第九觀點之任一方法中之光罩坯料板。第一光半穿透膜，第二光半穿透膜，和光遮蔽膜係依序指定堆疊在透明基板上。A reticle blank used in any of the sixth, seventh, or ninth aspects. The first light semi-transmissive film, the second light semi-transmissive film, and the light shielding film are sequentially stacked on the transparent substrate.

根據本發明之第一到第四之觀點，各自具有在蝕刻其他部分時可以抗蝕刻的材料製成之第一光半穿透膜和光遮蔽膜係依序指定形成在透明基板上，而在此光遮蔽膜上，有形成最好係由可以被和光遮蔽膜相同的蝕刻物蝕刻掉之材料製成之第二光半穿透膜。因此，藉由組合各自具有在蝕刻其他部分時可以抗蝕刻的膜層和各自具有在蝕刻其他部分時不抗蝕刻的膜層，可以減少微影製程描繪的次數製造四階光罩。According to the first to fourth aspects of the present invention, the first light semi-transmissive film and the light shielding film each having a material which is resistant to etching when etching other portions are sequentially formed on the transparent substrate, and here On the light shielding film, there is formed a second light semi-transmissive film which is preferably made of a material which can be etched away by the same etching material as the light shielding film. Therefore, by combining the film layers each having etching resistance while etching other portions and each having a film layer which is not resistant to etching when etching other portions, the fourth-order photomask can be manufactured by reducing the number of times of the lithography process drawing.

根據本發明之第六到第九之觀點，第一光半穿透膜，第二光半穿透膜，和光遮蔽膜係依序指定形成在透明基板上。第一光半穿透膜和光遮蔽膜係由可以藉由相同的蝕刻物蝕刻之材料製成，而第二光半穿透膜係由在蝕刻第一光半穿透膜和光遮蔽膜的材料時，可以抗蝕刻之材料製成。因此，藉由組合各自具有在蝕刻其他部分時可以抗蝕刻的膜層和各自具有在蝕刻其他部分時不抗蝕刻的膜層，可以減少微影製程描繪的次數製造四階光罩。According to the sixth to ninth aspects of the present invention, the first light semi-transmissive film, the second light semi-transmissive film, and the light shielding film are sequentially formed on the transparent substrate. The first light semi-transmissive film and the light shielding film are made of a material that can be etched by the same etchant, and the second light semi-transmissive film is made of a material that etches the first light semi-transmissive film and the light shielding film. It can be made of materials resistant to etching. Therefore, by combining the film layers each having etching resistance while etching other portions and each having a film layer which is not resistant to etching when etching other portions, the fourth-order photomask can be manufactured by reducing the number of times of the lithography process drawing.

現在參考圖式詳細說明本發明的某些實施例。Some embodiments of the invention are now described in detail with reference to the drawings.

(第一實施例)(First Embodiment)

第1A圖到第1I圖為根據本發明之四階光罩製造方法中的第一實施例，四灰階光罩製造方法製程之特別說明圖。第2A圖和第2B圖分別為藉由第1A圖到第1I圖的製程製造之四灰階光罩的上視圖和橫截面圖。1A to 1I are diagrams showing a process of manufacturing a four-gray reticle in accordance with a first embodiment of the fourth-order reticle manufacturing method of the present invention. 2A and 2B are a top view and a cross-sectional view, respectively, of a four-gray reticle manufactured by the processes of Figs. 1A to 1I.

例如，第2A圖和第2B圖所示之灰階光罩10係用以製造液晶顯示器(LCDs)，電漿顯示器面板(PDPs)，或類似裝置之薄膜電晶體(TFTs)或濾光片，而且配合在轉移標的物11上形成具有不同階梯式或連續式厚度之抗蝕圖案12。在第2B圖中，符號19A，19B，和19C分別表示轉移標的物11之堆疊膜層。換言之，在本實施例中，轉移標的物11係藉由堆疊膜層19A，19B，和19C依序指定形成在基板19上。For example, the gray scale reticle 10 shown in FIGS. 2A and 2B is used to manufacture thin film transistors (TFTs) or filters of liquid crystal displays (LCDs), plasma display panels (PDPs), or the like. Further, a resist pattern 12 having a different stepped or continuous thickness is formed on the transfer target 11. In Fig. 2B, symbols 19A, 19B, and 19C respectively represent stacked film layers of the target object 11. In other words, in the present embodiment, the transfer target 11 is formed on the substrate 19 in order by the stacked film layers 19A, 19B, and 19C.

灰階光罩10包含配合遮蔽曝光之光遮蔽部分13(光穿透率約0%)，配合約100%穿透曝光之光穿透部分14，及被灰階光罩10使用時，各自配合減少曝光穿透率約20到50%之第一光半穿透部分15A和第二光半穿透部分15B。如上所述，除了光遮蔽部分13和光穿透部分14之外，還具有一個或多個光半穿透部分之光罩稱為灰階光罩。在本實施例中，第一光半穿透部分15A和第二光半穿透部分15B具有不同的光穿透率，而且第一光半穿透部分15A的光穿透率設定低於第二光半穿透部分15B。因此，灰階光罩10可以建構為曝光的穿透率有四個不同層次之四灰階光罩。The gray scale mask 10 includes a light shielding portion 13 (with a light transmittance of about 0%) for shielding exposure, a light penetration portion 14 for about 100% penetration exposure, and a gray light mask 10 for use with each other. The first light semi-transmissive portion 15A and the second light semi-transmissive portion 15B having an exposure transmittance of about 20 to 50% are reduced. As described above, in addition to the light shielding portion 13 and the light transmitting portion 14, a photomask having one or more light transmissive portions is referred to as a gray scale mask. In the present embodiment, the first light semi-transmissive portion 15A and the second light semi-transmissive portion 15B have different light transmittances, and the light transmittance of the first light semi-transmissive portion 15A is set lower than the second. The light partially penetrates the portion 15B. Therefore, the gray scale reticle 10 can be constructed to have four different levels of four gray scale reticles for exposure.

第一光半穿透部分15A係藉由在透明基板16的表面上，如玻璃基板，形成可以半穿透光之第一光半穿透膜17A 實行。第二光半穿透部分15B係藉由在透明基板16的表面上，形成可以半穿透光之第二光半穿透膜17B實行。光遮蔽部分13係藉由堆疊依序指定形成在透光基板16的表面上之第一光半穿透膜17A，光遮蔽膜18，和第二光半穿透膜17B形成。The first light transmissive portion 15A forms a first light semi-transmissive film 17A that can penetrate light on the surface of the transparent substrate 16, such as a glass substrate. Implemented. The second light semi-transmissive portion 15B is formed by forming a second light semi-transmissive film 17B which can penetrate light on the surface of the transparent substrate 16. The light shielding portion 13 is formed by sequentially designating the first light semi-transmissive film 17A, the light shielding film 18, and the second light semi-transmissive film 17B formed on the surface of the light-transmitting substrate 16.

第一光半穿透膜17A係含有金屬和矽之薄膜，而且最好為含有矽化鉬(MoSi)當作主要組成之膜層。例如，MoSi，(MoSi2 )，MoSiN，MoSiON，MoSiCON，或類似材料有被使用。第二光半穿透膜17B和光遮蔽膜18係各自含有鉻當作主要組成之膜層，其中鉻最好用於光遮蔽膜18，而氮化鉻，氧化鉻，氮氧化鉻，氟化鉻，或類似材料最好用於第二光半穿透膜17B。第一光半穿透部分15A的光穿透率係根據第一光半穿透膜17A的材料選擇和厚度設定。第二光半穿透部分15B的光穿透率係根據第二光半穿透膜17B的材料選擇和厚度設定。光遮蔽部分13的光穿透率係根據材料的選擇，和第一光半穿透膜17A，第二光半穿透膜17B，及光遮蔽膜18的厚度設定。The first light semi-transmissive film 17A contains a film of metal and ruthenium, and is preferably a film layer containing molybdenum molybdenum (MoSi) as a main component. For example, MoSi, (MoSi 2 ), MoSiN, MoSiON, MoSiCON, or the like is used. The second light semi-transmissive film 17B and the light shielding film 18 each contain a film layer mainly composed of chromium, wherein chromium is preferably used for the light shielding film 18, and chromium nitride, chromium oxide, chromium oxynitride, and chromium fluoride. Or a similar material is preferably used for the second light semi-transmissive film 17B. The light transmittance of the first light semi-transmissive portion 15A is set according to the material selection and thickness of the first light semi-transmissive film 17A. The light transmittance of the second light semi-transmissive portion 15B is set according to the material selection and thickness of the second light semi-transmissive film 17B. The light transmittance of the light shielding portion 13 is set according to the material selection, and the thicknesses of the first light semi-transmissive film 17A, the second light semi-transmissive film 17B, and the light shielding film 18.

當使用上述之四灰階光罩10時，曝光不會穿透光遮蔽部分13，所以曝光會在第二光半穿透部分15B減少，除了在第二光半穿透部分15B之外，曝光也會在第一光半穿透部分15A減少。結果，塗佈在轉移標的物11上之抗蝕膜(正抗蝕膜)形成下面的抗蝕圖案12。抗蝕圖案12被建構，使得在對應光遮蔽部分13的部分之抗蝕膜厚度T1最大，而在對應第一光半穿透部分15A的部分之抗蝕膜厚度T2小於 抗蝕膜厚度T1，但是大於在對應第二光半穿透部分15B的部分之抗蝕膜厚度T3。抗蝕圖案12在對應光穿透部分14的部分則沒有抗蝕膜。When the above-described fourth gray scale mask 10 is used, the exposure does not penetrate the light shielding portion 13, so that the exposure is reduced in the second light semi-transmissive portion 15B except for the exposure in the second light semi-transmissive portion 15B. It also decreases in the first light semi-transmissive portion 15A. As a result, the resist film (positive resist film) coated on the transfer target 11 forms the underlying resist pattern 12. The resist pattern 12 is constructed such that the resist film thickness T1 at the portion corresponding to the light shielding portion 13 is the largest, and the resist film thickness T2 at the portion corresponding to the first light half penetrating portion 15A is smaller than The resist film thickness T1 is larger than the resist film thickness T3 at the portion corresponding to the second light semi-transmissive portion 15B. The resist pattern 12 has no resist film at the portion corresponding to the light transmitting portion 14.

下述的製程係被應用到具有如上所述之抗蝕圖案12的轉移標的物11。首先，在抗蝕圖案12沒有抗蝕膜的部分(對應光穿透部分14的部分)，例如，應用第一蝕刻到轉移標的物11之膜層19A，19B，和19C。接著，藉由灰化或類似製程，移除具有抗蝕圖案12之抗蝕膜厚度T3的部分(對應第二光半穿透部分15B的部分)，然後，在此部分，例如，應用第二蝕刻到轉移標的物11之膜層19B和19C。然後，藉由灰化或類似製程，移除具有抗蝕圖案12之抗蝕膜厚度T2的部分(對應第一光半穿透部分15A的部分)，然後，在此部分，例如，應用第三蝕刻到轉移標的物11之膜層19C。在此方式下，只使用一個灰階光罩10就可以執行等效於那些藉由三個傳統光罩達成之製程，因此可以減少光罩數。The process described below is applied to the transfer target 11 having the resist pattern 12 as described above. First, in the portion where the resist pattern 12 has no resist film (the portion corresponding to the light penetrating portion 14), for example, the first etching to the film layers 19A, 19B, and 19C of the target object 11 is applied. Next, the portion having the resist film thickness T3 of the resist pattern 12 (the portion corresponding to the second light semi-transmissive portion 15B) is removed by ashing or the like, and then, in this portion, for example, the second portion is applied. The film layers 19B and 19C of the target substance 11 are etched. Then, the portion having the resist film thickness T2 of the resist pattern 12 (the portion corresponding to the first light semi-transmissive portion 15A) is removed by ashing or the like, and then, in this portion, for example, the third portion is applied. The film layer 19C of the target substance 11 is etched. In this manner, only one gray scale mask 10 can be used to perform processes equivalent to those achieved by three conventional masks, thereby reducing the number of masks.

現在參考第1A圖到第1I圖，將說明如上所述之四灰階光罩10的製程。Referring now to FIGS. 1A through 1I, the process of the four-gray reticle 10 as described above will be explained.

首先，第一光半穿透膜17A和光遮蔽膜18依序指定形成在透明基板16的表面上，於是形成和製備光罩坯料板20(第1A圖)。第一光半穿透膜17A和光遮蔽膜18各自具有在灰階光罩10的製程中，蝕刻其他部分時可以抗蝕刻。例如，第一光半穿透膜17A係由具有對鉻蝕刻氣體或液體抗蝕刻之材料製成，而光遮蔽膜18係由具有對MoSi蝕刻氣體或液體抗蝕刻之材料製成。First, the first light semi-transmissive film 17A and the light shielding film 18 are sequentially formed on the surface of the transparent substrate 16, and thus the mask blank 20 is formed and prepared (Fig. 1A). The first light semi-transmissive film 17A and the light shielding film 18 are each provided in the process of the gray scale mask 10, and are resistant to etching when etching other portions. For example, the first light semi-transmissive film 17A is made of a material having etching resistance to a chromium etching gas or liquid, and the light shielding film 18 is made of a material having etching resistance to a MoSi etching gas or liquid.

然後，在光罩坯料板20的光遮蔽膜18上形成抗蝕膜(正抗蝕膜)，之後藉由使用電子束或雷射描繪設備對此抗蝕膜施以曝光/描繪，然後顯影，於是形成第一抗蝕圖案21(第1B圖)。第一抗蝕圖案21係形成具有對應要製造之灰階光罩10的光穿透部分14和第二光半穿透部分15B之開口區的形狀。Then, a resist film (positive resist film) is formed on the light shielding film 18 of the mask blank 20, and then the resist film is exposed/drawn by using an electron beam or a laser drawing device, and then developed, Thus, the first resist pattern 21 is formed (Fig. 1B). The first resist pattern 21 is formed into a shape having an opening area corresponding to the light penetrating portion 14 and the second light half penetrating portion 15B of the gray scale mask 10 to be manufactured.

然後，使用鉻蝕刻氣體或液體和使用第一抗蝕圖案21當作光罩，對形成第一抗蝕圖案21之光罩坯料板20的光遮蔽膜18施以乾蝕刻或濕蝕刻(第1C圖)。藉由此蝕刻，光遮蔽膜18形成光遮蔽膜圖案22。因為第一光半穿透膜17A對鉻蝕刻氣體或液體抗蝕刻，所以在光遮蔽膜18的蝕刻期間很難被蝕刻掉。Then, the light shielding film 18 of the mask blank 20 forming the first resist pattern 21 is subjected to dry etching or wet etching using a chrome etching gas or liquid and using the first resist pattern 21 as a mask (1C Figure). By this etching, the light shielding film 18 forms the light shielding film pattern 22. Since the first light semi-transmissive film 17A is resistant to etching by the chrome etching gas or liquid, it is difficult to be etched away during the etching of the light shielding film 18.

在光遮蔽膜圖案22形成之後，剝除第一抗蝕圖案21(第1D圖)。之後，使用MoSi蝕刻氣體或液體和使用光遮蔽膜圖案22當作遮罩，對第一光半穿透膜17A施以乾蝕刻或濕蝕刻，於是形成第一光半穿透膜圖案23(第1E圖)。在第1D圖之第一抗蝕圖案21的剝除可以稍後執行。換言之，在光遮蔽膜圖案22形成之後，可以安排藉由使用第一抗蝕圖案21和光遮蔽膜圖案22當作遮罩，應用乾蝕刻或濕蝕刻到第一光半穿透膜17A，然後剝除第一抗蝕圖案21，形成第一光半穿透膜圖案23。因為光遮蔽膜18對MoSi蝕刻氣體或液體抗蝕刻，所以在第一光半穿透膜17A的蝕刻期間很難被蝕刻掉。至於MoSi蝕刻液體，例如，使用由至少含有選擇自氫氟酸，矽氫氟酸，和氟化氫銨其中之一氟化 合物，及至少含有選擇自過氧化氫，硝酸，和硫酸其中之一氧化劑的蝕刻液體製成。After the light-shielding film pattern 22 is formed, the first resist pattern 21 is removed (Fig. 1D). Thereafter, the first light semi-transmissive film 17A is subjected to dry etching or wet etching using a MoSi etching gas or liquid and using the light shielding film pattern 22 as a mask, thereby forming a first light semi-transmissive film pattern 23 (No. 1E picture). The stripping of the first resist pattern 21 in the 1Dth diagram can be performed later. In other words, after the light-shielding film pattern 22 is formed, it may be arranged to apply dry etching or wet etching to the first light-transmissive film 17A by using the first resist pattern 21 and the light-shielding film pattern 22 as a mask, and then peeling In addition to the first resist pattern 21, a first light semi-transmissive film pattern 23 is formed. Since the light shielding film 18 is resistant to etching by the MoSi etching gas or liquid, it is difficult to be etched away during the etching of the first light semi-transmissive film 17A. As for the MoSi etching liquid, for example, the fluorination is carried out by using at least one selected from the group consisting of hydrofluoric acid, hydrazine hydrofluoric acid, and ammonium hydrogen fluoride. And an etching liquid containing at least one of an oxidizing agent selected from the group consisting of hydrogen peroxide, nitric acid, and sulfuric acid.

在如上所述之第一光半穿透膜圖案23形成之後，在光遮蔽膜18和曝露的透明基板16之上，形成第二光半穿透膜17B，於是形成另一個光罩坯料板24(第1F圖)。第二光半穿透膜17B係由可以和光遮蔽膜18相同蝕刻之材料製成。因此，第二光半穿透膜17B和光遮蔽膜18各自只具有對其他部分的蝕刻時有很小的抗蝕刻。如第1E圖和第1F圖所示，光罩坯料板24被建構，使得堆疊在透明基板16上之第一光半穿透膜17A和光遮蔽膜18分別形成第一光半穿透膜圖案23和光遮蔽膜圖案22，而第二光半穿透膜17B則形成在這些製成圖案的膜層之上。After the first light semi-transmissive film pattern 23 as described above is formed, on the light shielding film 18 and the exposed transparent substrate 16, a second light semi-transmissive film 17B is formed, thus forming another mask blank 24 (Fig. 1F). The second light semi-transmissive film 17B is made of a material that can be etched the same as the light shielding film 18. Therefore, the second light-transmissive film 17B and the light-shielding film 18 each have only a small etching resistance to the etching of other portions. As shown in FIGS. 1E and 1F, the mask blank plate 24 is constructed such that the first light semi-transmissive film 17A and the light shielding film 18 stacked on the transparent substrate 16 respectively form the first light semi-transmissive film pattern 23. And the light shielding film pattern 22, and the second light semi-transmissive film 17B is formed over the patterned film layers.

然後，以上述相同之方式，在光罩坯料板24的第二光半穿透膜17B之上，形成抗蝕膜，並且對此抗蝕膜施以曝光/描繪和顯影，於是形成第二抗蝕圖案25(第1G圖)。第二抗蝕圖案25形成具有對應光穿透部分14和第一光半穿透部分15A之開口區的形狀。Then, in the same manner as described above, a resist film is formed on the second light semi-transmissive film 17B of the mask blank 24, and the resist film is subjected to exposure/drawing and development, thereby forming a second anti-resistance. Eclipse pattern 25 (Fig. 1G). The second resist pattern 25 is formed into a shape having an opening area corresponding to the light transmitting portion 14 and the first light semi-transmissive portion 15A.

然後，使用鉻蝕刻氣體或液體和使用第二抗蝕圖案25當作遮罩，對第二光半穿透膜17B和光遮蔽膜18施以乾蝕刻或濕蝕刻(第1H圖)。之後，藉由移除(剝除)第二抗蝕圖案25，可以得到具有光穿透部分14，藉由第一光半穿透膜17A形成的第一光半穿透部分15A，藉由第二光半穿透膜17B形成的第二光半穿透部分15B，及堆疊在一起之藉由第一光半穿透膜17A形成的光遮蔽部分13，光遮蔽膜18，和 第二光半穿透膜17B之四灰階光罩10(第1I圖)。Then, the second light semi-transmissive film 17B and the light shielding film 18 are subjected to dry etching or wet etching (Fig. 1H) using a chromium etching gas or liquid and using the second resist pattern 25 as a mask. Thereafter, by removing (stripping) the second resist pattern 25, the first light semi-transmissive portion 15A having the light penetrating portion 14 formed by the first light semi-transmissive film 17A can be obtained by a second light transmissive portion 15B formed by the two-light semi-transmissive film 17B, and a light shielding portion 13 formed by the first light semi-transmissive film 17A, the light shielding film 18, and The fourth gray scale mask 10 of the second light semi-transmissive film 17B (Fig. 1I).

根據上面的實施例可以得到以下的結果。根據灰階光罩10之製程，由各自具有對其他部分蝕刻時可以抗蝕刻的材料製成之第一光半穿透膜17A和光遮蔽膜18，係依序指定形成在光穿透基板16之上，而且在此光遮蔽膜18之上，形成可以藉由和光遮蔽膜18相同的蝕刻物蝕刻之材料製成之第二光半穿透膜17B。因此，藉由組合各自具有對蝕刻其他部分時有很大抗蝕刻之膜層和各自具有對蝕刻其他部分時有相當小抗蝕刻之膜層，四灰階光罩10可以減少微影製程的描繪次數到兩次製造。The following results can be obtained according to the above embodiment. According to the process of the gray scale mask 10, the first light semi-transmissive film 17A and the light shielding film 18 each made of a material which is resistant to etching when etched to other portions are sequentially formed on the light-transmitting substrate 16 Above and above the light shielding film 18, a second light semi-transmissive film 17B which can be made of the same etching material as the light shielding film 18 is formed. Therefore, the four gray scale mask 10 can reduce the depiction of the lithography process by combining the film layers each having a large etching resistance for etching other portions and each having a relatively small anti-etching layer for etching other portions. The number of times is two times.

(第二實施例)(Second embodiment)

第3A圖到第3G圖為根據本發明之四灰階光罩製造方法中的第二實施例，四灰階光罩製造方法製程之說明圖。第4A圖和第4B圖分別為藉由第3A圖到第3G圖的製程製造之四灰階光罩的上視圖和橫截面圖。在第二實施例中，相同的符號表示和前面的第一實施例之中的那些部分相同。3A to 3G are explanatory views of a process of a method of manufacturing a four-gray reticle according to a second embodiment of the method for manufacturing a four-gray reticle according to the present invention. 4A and 4B are a top view and a cross-sectional view, respectively, of a four-gray reticle manufactured by the processes of Figs. 3A to 3G. In the second embodiment, the same symbolic representations are the same as those in the foregoing first embodiment.

例如，第4A圖和第4B圖所示之灰階光罩30也係用以製造液晶顯示器(LCDs)，電漿顯示器面板(PDPs)，或類似裝置之薄膜電晶體(TFTs)或濾光片，而且配合在轉移標的物31上形成具有不同階梯式或連續式厚度之抗蝕圖案32。For example, the gray scale mask 30 shown in Figures 4A and 4B is also used to fabricate thin film transistors (TFTs) or filters for liquid crystal displays (LCDs), plasma display panels (PDPs), or the like. And forming a resist pattern 32 having a different stepped or continuous thickness on the transfer target 31.

灰階光罩30包含配合遮蔽曝光之光遮蔽部分33(光穿透率約0%)，配合約100%穿透曝光之光穿透部分34，及被灰階光罩30使用時，各自配合減少曝光穿透率約20到50% 之第一光半穿透部分35A和第二光半穿透部分35B。在本實施例中，第一光半穿透部分35A和第二光半穿透部分35B具有不同的光穿透率，而且第一光半穿透部分35A的光穿透率設定高於第二光半穿透部分35B。因此，灰階光罩30可以為曝光的穿透率有四個不同層次之四灰階光罩。The gray scale mask 30 includes a light shielding portion 33 (with a light transmittance of about 0%) for masking exposure, a light transmitting portion 34 for about 100% penetration exposure, and a gray light mask 30 for use in cooperation. Reduce exposure penetration by approximately 20 to 50% The first light semi-transmissive portion 35A and the second light semi-transmissive portion 35B. In the present embodiment, the first light semi-transmissive portion 35A and the second light semi-transmissive portion 35B have different light transmittances, and the light transmittance of the first light semi-transmissive portion 35A is set higher than the second. The light partially penetrates the portion 35B. Therefore, the gray scale mask 30 can have four different levels of four gray scale masks for the exposure transmittance.

第一光半穿透部分35A係藉由在透明基板16的表面上，如玻璃基板，形成可以半穿透光之第一光半穿透膜37A實行。第二光半穿透部分35B係藉由在透明基板16的表面上，堆疊可以半穿透光之第一光半穿透膜37A和第二光半穿透膜37B實行。光遮蔽部分33係藉由堆疊依序指定形成在透明基板16的表面上之第一光半穿透膜37A，第二光半穿透膜37B，和光遮蔽膜38形成。The first light semi-transmissive portion 35A is formed by forming a first light semi-transmissive film 37A which can penetrate light on the surface of the transparent substrate 16, such as a glass substrate. The second light semi-transmissive portion 35B is carried out by stacking the first light semi-transmissive film 37A and the second light semi-transmissive film 37B which can partially penetrate the light on the surface of the transparent substrate 16. The light shielding portion 33 is formed by sequentially designating a first light semi-transmissive film 37A, a second light semi-transmissive film 37B, and a light shielding film 38 formed on the surface of the transparent substrate 16.

第二光半穿透膜37B係含有金屬和矽之薄膜，而且較佳為含有矽化鉬(MoSi)當作主要組成之膜層。例如，MoSi，(MoSi2 )，MoSiN，MoSiON，MoSiCON，或類似材料有被使用。第一光半穿透膜37A和光遮蔽膜38係各自含有鉻當作主要組成之膜層，其中鉻最好用於光遮蔽膜38，而氮化鉻，氧化鉻，氮氧化鉻，氟化鉻，或類似材料最好用於第一光半穿透膜37A。第一光半穿透部分35A的光穿透率係根據第一光半穿透膜37A的材料選擇和厚度設定。第二光半穿透部分35B的光穿透率係根據第一光半穿透膜37A和第二光半穿透膜37B的材料選擇和厚度設定。The second light semi-transmissive film 37B is a film containing metal and ruthenium, and is preferably a film layer containing molybdenum molybdenum (MoSi) as a main component. For example, MoSi, (MoSi 2 ), MoSiN, MoSiON, MoSiCON, or the like is used. The first light semi-transmissive film 37A and the light shielding film 38 each contain a film layer mainly composed of chromium, wherein chromium is preferably used for the light shielding film 38, and chromium nitride, chromium oxide, chromium oxynitride, and chromium fluoride. Or a similar material is preferably used for the first light semi-transmissive film 37A. The light transmittance of the first light semi-transmissive portion 35A is set according to the material selection and thickness of the first light semi-transmissive film 37A. The light transmittance of the second light semi-transmissive portion 35B is set according to the material selection and thickness of the first light semi-transmissive film 37A and the second light semi-transmissive film 37B.

當使用上述之四灰階光罩30時，曝光不會穿透光遮蔽部分33，所以曝光會在第一光半穿透部分35A減少，除了 在第一光半穿透部分35A之外，曝光也會在第二光半穿透部分35B減少。結果，塗佈在轉移標的物31上之抗蝕膜(正抗蝕膜)形成下面的抗蝕圖案32。抗蝕圖案32被建構，使得在對應光遮蔽部分33的部分之抗蝕膜厚度T11最大，而在對應第二光半穿透部分35B的部分之抗蝕膜厚度T12小於抗蝕膜厚度T11，但是大於在對應第一光半穿透部分35A的部分之抗蝕膜厚度T13。抗蝕圖案32在對應光穿透部分34的部分則沒有抗蝕膜。When the fourth gray scale mask 30 described above is used, the exposure does not penetrate the light shielding portion 33, so the exposure is reduced at the first light semi-transmissive portion 35A except Outside the first light semi-transmissive portion 35A, the exposure is also reduced at the second light semi-transmissive portion 35B. As a result, the resist film (positive resist film) coated on the transfer target 31 forms the underlying resist pattern 32. The resist pattern 32 is structured such that the resist film thickness T11 at the portion corresponding to the light shielding portion 33 is the largest, and the resist film thickness T12 at the portion corresponding to the second light semi-transmissive portion 35B is smaller than the resist film thickness T11, However, it is larger than the resist film thickness T13 at the portion corresponding to the first light semi-transmissive portion 35A. The resist pattern 32 has no resist film at the portion corresponding to the light transmitting portion 34.

下述的製程係被應用到具有如上所述之抗蝕圖案32的轉移標的物31。首先，在抗蝕圖案32沒有抗蝕膜的部分(對應光穿透部分34的部分)，例如，應用第一蝕刻到轉移標的物31之膜層19A，19B，和19C。接著，藉由灰化或類似製程，移除具有抗蝕圖案32之抗蝕膜厚度T13的部分(對應第一光半穿透部分35A的部分)，然後，在此部分，例如，應用第二蝕刻到轉移標的物31之膜層19B和19C。然後，藉由灰化或類似製程，移除具有抗蝕圖案32之抗蝕膜厚度T12的部分(對應第二光半穿透部分35B的部分)，然後，在此部分，例如，應用第三蝕刻到轉移標的物31之膜層19C。在此方式下，只使用一個灰階光罩30就可以執行等效於那些藉由三個傳統光罩達成之製程，因此可以減少光罩數。The process described below is applied to the transfer target 31 having the resist pattern 32 as described above. First, in the portion where the resist pattern 32 has no resist film (the portion corresponding to the light penetrating portion 34), for example, the first etching to the film layers 19A, 19B, and 19C of the target object 31 is applied. Next, the portion having the resist film thickness T13 of the resist pattern 32 (the portion corresponding to the first light semi-transmissive portion 35A) is removed by ashing or the like, and then, in this portion, for example, the second portion is applied. The film layers 19B and 19C of the target object 31 are etched. Then, the portion having the resist film thickness T12 of the resist pattern 32 (the portion corresponding to the second light semi-transmissive portion 35B) is removed by ashing or the like, and then, in this portion, for example, the third portion is applied. The film layer 19C of the target substance 31 is etched. In this manner, only one gray scale mask 30 can be used to perform processes equivalent to those achieved by three conventional masks, thereby reducing the number of masks.

現在參考第3A圖到第3G圖，將說明如上所述之四灰階光罩30的製程。Referring now to Figures 3A through 3G, the process of the four-gray reticle 30 as described above will be explained.

首先，第一光半穿透膜37A，第二光半穿透膜37B，和光遮蔽膜38依序指定形成在透明基板16的表面上，於是 形成和製備光罩坯料板40(第3A圖)。第二光半穿透膜37B和光遮蔽膜38各自具有在灰階光罩30的製程中，蝕刻其他部分時可以抗蝕刻。例如，第二光半穿透膜37B係由具有對鉻蝕刻氣體或液體抗蝕刻之材料製成，而光遮蔽膜38係由具有對MoSi蝕刻氣體或液體抗蝕刻之材料製成。第一光半穿透膜37A係由可以藉由和光遮蔽膜38相同蝕刻物蝕刻掉之材料製成。因此，第一光半穿透膜37A和光遮蔽膜38各自只具有對其他部分的蝕刻時有很小的抗蝕刻。First, the first light semi-transmissive film 37A, the second light semi-transmissive film 37B, and the light shielding film 38 are sequentially formed on the surface of the transparent substrate 16, so A photomask blank 40 is formed and prepared (Fig. 3A). The second light semi-transmissive film 37B and the light shielding film 38 are each provided in the process of the gray scale mask 30, and are resistant to etching when etching other portions. For example, the second light semi-transmissive film 37B is made of a material having etching resistance to a chromium etching gas or liquid, and the light shielding film 38 is made of a material having etching resistance to a MoSi etching gas or liquid. The first light semi-transmissive film 37A is made of a material which can be etched away by the same etching material as the light shielding film 38. Therefore, the first light semi-transmissive film 37A and the light shielding film 38 each have only a small etching resistance to the etching of other portions.

然後，在光罩坯料板40的光遮蔽膜38上形成抗蝕膜(正抗蝕膜)，之後藉由使用電子束或雷射描繪設備對此抗蝕膜施以曝光/描繪，然後顯影，於是形成第一抗蝕圖案41(第3B圖)。第一抗蝕圖案41係形成具有對應要製造之灰階光罩30的光穿透部分34和第一光半穿透部分35A之開口區的形狀。Then, a resist film (positive resist film) is formed on the light shielding film 38 of the mask blank 40, and then the resist film is exposed/drawn by using an electron beam or a laser drawing device, and then developed, Thus, the first resist pattern 41 is formed (Fig. 3B). The first resist pattern 41 is formed into a shape having an opening region corresponding to the light transmitting portion 34 and the first light semi-transmissive portion 35A of the gray scale mask 30 to be manufactured.

然後，使用鉻蝕刻氣體或液體和使用第一抗蝕圖案41當作遮罩，對形成第一抗蝕圖案41之光罩坯料板40的光遮蔽膜38施以乾蝕刻或濕蝕刻(第3C圖)。藉由此蝕刻，光遮蔽膜38形成光遮蔽膜圖案42。因為第二光半穿透膜37B對鉻蝕刻氣體或液體抗蝕刻，因此可避免在光遮蔽膜38的蝕刻期間被蝕刻掉。Then, the light shielding film 38 of the mask blank 40 forming the first resist pattern 41 is subjected to dry etching or wet etching using a chromium etching gas or liquid and using the first resist pattern 41 as a mask (3C Figure). By this etching, the light shielding film 38 forms the light shielding film pattern 42. Since the second light semi-transmissive film 37B is resistant to etching by the chrome etching gas or liquid, it can be prevented from being etched away during the etching of the light shielding film 38.

在光遮蔽膜圖案42形成之後，剝除第一抗蝕圖案41，之後，使用MoSi蝕刻氣體或液體和使用光遮蔽膜圖案42當作遮罩，對第二光半穿透膜37B施以乾蝕刻或濕蝕刻，於是形成第二光半穿透膜圖案43(第3D圖)。此外，在本 實施例之中，第一抗蝕圖案41的剝除可以稍後執行。換言之，在光遮蔽膜圖案42形成之後，可以安排藉由使用第一抗蝕圖案41和光遮蔽膜圖案42當作遮罩，應用乾蝕刻或濕蝕刻到第二光半穿透膜37B，然後剝除第一抗蝕圖案41，形成第二光半穿透膜圖案43。因為光遮蔽膜38和第一光半穿透膜37A各自對MoSi蝕刻氣體或液體具有抗蝕刻，因此這些膜可以避免在第二光半穿透膜37B的蝕刻期間被蝕刻掉。After the light-shielding film pattern 42 is formed, the first resist pattern 41 is stripped, and thereafter, the second light-transmissive film 37B is dried by using a MoSi etching gas or liquid and using the light-shielding film pattern 42 as a mask. Etching or wet etching, then forming a second light semi-transmissive film pattern 43 (Fig. 3D). In addition, in this In the embodiment, the stripping of the first resist pattern 41 can be performed later. In other words, after the light-shielding film pattern 42 is formed, it may be arranged to apply dry etching or wet etching to the second light-transmissive film 37B by using the first resist pattern 41 and the light-shielding film pattern 42 as a mask, and then peeling In addition to the first resist pattern 41, a second light semi-transmissive film pattern 43 is formed. Since the light shielding film 38 and the first light semi-transmissive film 37A each have an anti-etching effect on the MoSi etching gas or liquid, these films can be prevented from being etched away during the etching of the second light semi-transmissive film 37B.

在如上所述之第二光半穿透膜圖案43形成之後，在光遮蔽膜38和曝露的第一光半穿透膜37A之上，形成抗蝕膜，然後，以上述相同之方式，對此抗蝕膜施以曝光/描繪和顯影，於是形成第二抗蝕圖案44(第3E圖)。第二抗蝕圖案44形成具有對應光穿透部分34和第二光半穿透部分35B之開口區的形狀。After the second light semi-transmissive film pattern 43 as described above is formed, a resist film is formed over the light shielding film 38 and the exposed first light semi-transmissive film 37A, and then, in the same manner as described above, This resist film is subjected to exposure/drawing and development, and thus a second resist pattern 44 is formed (Fig. 3E). The second resist pattern 44 is formed into a shape having an opening area corresponding to the light transmitting portion 34 and the second light half penetrating portion 35B.

然後，使用鉻蝕刻氣體或液體和使用第二抗蝕圖案44當作遮罩，對光遮蔽膜38和第一光半穿透膜37A施以乾蝕刻或濕蝕刻(第3F圖)。之後，藉由移除(剝除)剩餘的第二抗蝕圖案44，可以得到具有光穿透部分34，藉由第一光半穿透膜37A形成的第一光半穿透部分35A，藉由第一光半穿透膜37A和第二光半穿透膜37B堆疊在一起所形成的第二光半穿透部分35B，及藉由第一光半穿透膜37A，第二光半穿透膜37B，和光遮蔽膜38堆疊在一起所形成的光遮蔽部分33之四灰階光罩30(第3G圖)。Then, the light shielding film 38 and the first light semi-transmissive film 37A are subjected to dry etching or wet etching (Fig. 3F) using a chromium etching gas or liquid and using the second resist pattern 44 as a mask. Thereafter, by removing (stripping) the remaining second resist pattern 44, the first light semi-transmissive portion 35A having the light penetrating portion 34 formed by the first light semi-transmissive film 37A can be obtained. a second light semi-transmissive portion 35B formed by stacking the first light semi-transmissive film 37A and the second light semi-transmissive film 37B together, and by the first light semi-transmissive film 37A, the second light half-through The transmissive film 37B and the light shielding film 38 are stacked together to form a fourth gray scale mask 30 (Fig. 3G) of the light shielding portion 33.

根據上面的實施例可以得到以下的結果。根據灰階光 罩30之製程，第一光半穿透膜37A，第二光半穿透膜37B，和光遮蔽膜38，係依序指定形成在透明基板16之上，其中第一光半穿透膜37A和光遮蔽膜38係由可以藉由相同蝕刻物蝕刻之材料製成，而第二光半穿透膜37B則是由蝕刻第一光半穿透膜37A和光遮蔽膜38的材料時，具有抗蝕刻之材料製成。因此，藉由組合各自對蝕刻其他部分時具有抗蝕刻之膜層和各自具有對蝕刻其他部分時不抗蝕刻之膜層，四灰階光罩30可以減少微影製程的描繪次數到兩次製造。The following results can be obtained according to the above embodiment. According to gray scale light The process of the cover 30, the first light semi-transmissive film 37A, the second light semi-transmissive film 37B, and the light shielding film 38 are sequentially formed on the transparent substrate 16, wherein the first light semi-transmissive film 37A and the light The masking film 38 is made of a material that can be etched by the same etchant, and the second light semi-transmissive film 37B is etch-resistant by etching the material of the first light-semi-transmissive film 37A and the light-shielding film 38. Made of materials. Therefore, the four-gray reticle 30 can reduce the number of times of lithography process to two fabrications by combining the film layers having anti-etching when etching the other portions and the film layers which are not resistant to etching when etching other portions. .

本發明係以根據兩個實施例說明，但是本發明並不侷限於此。The present invention has been described in terms of two embodiments, but the present invention is not limited thereto.

10,30‧‧‧灰階光罩10,30‧‧‧ Grayscale mask

11,31‧‧‧轉移標的物11,31‧‧‧Transfer of subject matter

12,32‧‧‧抗蝕圖案12,32‧‧‧resist pattern

13,33‧‧‧光遮蔽部分13,33‧‧‧Light-shielded parts

14,34‧‧‧光穿透部分14,34‧‧‧Light penetration

15A,35A‧‧‧第一光半穿透部分15A, 35A‧‧‧First light semi-transparent part

15B,35B‧‧‧第二光半穿透部分15B, 35B‧‧‧Second light semi-transparent part

16‧‧‧透明基板16‧‧‧Transparent substrate

17A,37A‧‧‧第一光半穿透膜17A, 37A‧‧‧First light semi-transmissive film

17B,37B‧‧‧第二光半穿透膜17B, 37B‧‧‧Second light semi-transmissive film

18,38‧‧‧光遮蔽膜18,38‧‧‧Light masking film

19‧‧‧基板19‧‧‧Substrate

19A,19B,19C‧‧‧堆疊膜層19A, 19B, 19C‧‧‧Stacked film

20,24,40‧‧‧光罩基板20,24,40‧‧‧mask substrate

21,41‧‧‧第一抗蝕圖案21,41‧‧‧First resist pattern

22,42‧‧‧光遮蔽膜圖案22,42‧‧‧Light masking film pattern

23‧‧‧第一光半穿透膜圖案23‧‧‧First light transflective film pattern

25,44‧‧‧第二抗蝕圖案25,44‧‧‧second resist pattern

43‧‧‧第二光半穿透膜圖案43‧‧‧Second light transflective film pattern

第1A圖到第1I圖為根據本發明之四階光罩製造方法中的第一實施例，四灰階光罩製造方法製程之特別說明圖；第2A圖和第2B圖分別為藉由第1A圖到第1I圖的製程製造之四灰階光罩的上視圖和橫截面圖，其中第2B圖為與轉移標的物一起之四灰階光罩；第3A圖到第3G圖為根據本發明之四灰階光罩製造方法中的第二實施例，四灰階光罩製造方法製程之特別說明圖；及第4A圖和第4B圖分別為藉由第3A圖到第3G圖的製程製造之四灰階光罩的上視圖和橫截面圖，其中第4B圖為與轉移標的物一起之四灰階光罩。1A to 1I are diagrams showing a process of manufacturing a four-gray mask according to a first embodiment of the fourth-order photomask manufacturing method according to the present invention; FIGS. 2A and 2B are respectively 1A to 1D are a top view and a cross-sectional view of a process of manufacturing a four-gray reticle, wherein FIG. 2B is a four-gray reticle together with the transfer target; FIGS. 3A to 3G are according to the present The second embodiment of the fourth gray scale mask manufacturing method of the invention, the special illustration of the manufacturing process of the four gray scale mask manufacturing method; and the 4A and 4B drawings are the processes of the 3A to 3G drawings, respectively. A top view and a cross-sectional view of a manufactured fourth gray scale reticle, wherein Fig. 4B is a four gray scale reticle together with the transfer target.

Claims (18)

一種製造四階光罩之方法，該四階光罩包含光遮蔽部分、光穿透部分、及具有不同光穿透率之第一和第二光半穿透部分，而該方法包含下列各步驟：製備光罩坯料板，係將第一光半穿透膜和光遮蔽膜依序形成在透明基板上，其中該第一光半穿透膜和該光遮蔽膜係由對彼此的蝕刻具有抗蝕性的材料製成；在該光罩坯料板的光遮蔽膜上形成第一抗蝕圖案，該第一抗蝕圖案具有對應該光穿透部分和該第二光半穿透部分之開口區；使用該第一抗蝕圖案當作遮罩，蝕刻該光遮蔽膜，然後蝕刻該第一光半穿透膜，接著再剝除該第一抗蝕圖案；在該透明基板和該光遮蔽膜上，形成第二光半穿透膜；在該第二光半穿透膜上形成第二抗蝕圖案，該第二抗蝕圖案具有對應該光穿透部分和該第一光半穿透部分之開口區；及使用該第二抗蝕圖案當作遮罩，蝕刻該第二光半穿透膜和該光遮蔽膜，然後移除該第二抗蝕圖案，於是形成該光穿透部分、該光遮蔽部分、該第一光半穿透部分、及該第二光半穿透部分。 A method of fabricating a fourth-order reticle comprising a light-shielding portion, a light-transmissive portion, and first and second light-transmissive portions having different light transmittances, and the method comprises the following steps Forming a photomask blank sheet by sequentially forming a first light semi-transmissive film and a light shielding film on the transparent substrate, wherein the first light semi-transmissive film and the light shielding film are resisted by etching each other Forming a material; forming a first resist pattern on the light shielding film of the mask blank, the first resist pattern having an opening area corresponding to the light penetrating portion and the second light semi-transmissive portion; Using the first resist pattern as a mask, etching the light shielding film, then etching the first light semi-transmissive film, and then stripping the first resist pattern; on the transparent substrate and the light shielding film Forming a second light semi-transmissive film; forming a second resist pattern on the second light semi-transmissive film, the second resist pattern having a light transmissive portion and the first light transflecting portion Opening area; and using the second resist pattern as a mask, etching the second light half-through The light shielding film and a film, and then removing the second resist pattern, thereby forming the light penetrating part, the light shielding portion, a semi-transmission portion of the first light and the second light semi-transmission portion. 一種製造四階光罩之方法，該四階光罩包含光遮蔽部分、光穿透部分、及具有不同光穿透率之第一和第二光半穿透部分，而該方法包含下列各步驟：製備光罩坯料板，係將第一光半穿透膜和光遮蔽膜依序形成在透明基板上，其中該第一光半穿透膜和該光遮蔽膜係由對彼此的蝕刻具有抗蝕性的材料製成；在該光罩坯料板的該光遮蔽膜上形成第一抗蝕圖案，該第一抗蝕圖案具有對應該光穿透部分和該第二光半穿透部分之開口區；使用該第一抗蝕圖案當作遮罩，蝕刻該光遮蔽膜，然後剝除該第一抗蝕圖案，接著再使用該光遮蔽膜當作遮罩，蝕刻該第一光半穿透膜；在該透明基板和該光遮蔽膜上形成第二光半穿透膜；在該第二光半穿透膜上形成第二抗蝕圖案，該第二抗蝕圖案具有對應該光穿透部分和該第一光半穿透部分之開口區；使用該第二抗蝕圖案當作遮罩，蝕刻該第二光半穿透膜和該光遮蔽膜，然後移除該第二抗蝕圖案，於是形成該光穿透部分、該光遮蔽部分、該第一光半穿透部分、及該第二光半穿透部分。 A method of fabricating a fourth-order reticle comprising a light-shielding portion, a light-transmissive portion, and first and second light-transmissive portions having different light transmittances, and the method comprises the following steps Forming a photomask blank sheet by sequentially forming a first light semi-transmissive film and a light shielding film on the transparent substrate, wherein the first light semi-transmissive film and the light shielding film are resisted by etching each other Forming a material; forming a first resist pattern on the light shielding film of the mask blank, the first resist pattern having an opening area corresponding to the light penetrating portion and the second light transflecting portion Using the first resist pattern as a mask, etching the light shielding film, then stripping the first resist pattern, and then using the light shielding film as a mask to etch the first light semi-transmissive film Forming a second light semi-transmissive film on the transparent substrate and the light shielding film; forming a second resist pattern on the second light semi-transmissive film, the second resist pattern having a light transmissive portion And an open area of the first light transmissive portion; using the second resist pattern as a cover, etching the second light semi-transmissive film and the light shielding film, and then removing the second resist pattern, thereby forming the light penetrating portion, the light shielding portion, the first light semi-transmissive portion, and The second light half penetrates the portion. 如申請專利範圍第1項或第2項之方法，其中該第二光半穿透膜係由可以藉由和該光遮蔽膜相同的蝕刻來蝕刻之材料製成。 The method of claim 1 or 2, wherein the second light semi-transmissive film is made of a material that can be etched by the same etching as the light shielding film. 如申請專利範圍第1項或第2項之方法，其中該第一光半穿透膜係由含有矽化鉬當作主要組成之材料製成，而該光遮蔽膜和該第二光半穿透膜各自係由含有鉻當作主要組成之材料製成。 The method of claim 1 or 2, wherein the first light semi-transmissive film is made of a material containing molybdenum molybdenum as a main component, and the light shielding film and the second light are semi-transparent. Each of the films is made of a material containing chromium as a main component. 一種光罩坯料板，用於申請專利範圍第1項或第2項之製造四階光罩之方法中，該光罩坯料板在透明基板上具有：製成圖案的膜層，其包含相互堆疊之第一光半穿透膜和光遮蔽膜；及第二光半穿透膜，其形成在該製成圖案的膜層上。 A reticle blank plate for use in a method of manufacturing a fourth-order reticle of claim 1 or 2, wherein the reticle blank has a patterned film layer on a transparent substrate, which comprises stacked on each other a first light semi-transmissive film and a light shielding film; and a second light semi-transmissive film formed on the patterned film layer. 一種製造四階光罩之方法，該四階光罩包含光遮蔽部分、光穿透部分、及具有不同光穿透率之第一和第二光半穿透部分，該方法包含下列各步驟：製備光罩坯料板，其中第一光半穿透膜、第二光半穿透膜、和光遮蔽膜係依序形成在透明基板上，該第一光半穿透膜和該光遮蔽膜與該第二光半穿透膜係由對彼此的蝕刻具有抗蝕性的材料製成；在該光罩坯料板的該光遮蔽膜上形成第一抗蝕圖案，該第一抗蝕圖案具有對應該光穿透部分和該第一光半穿透部分之開口區；使用該第一抗蝕圖案當作遮罩，蝕刻該光遮蔽膜，然後蝕刻該第二光半穿透膜，接著再剝除該第一抗蝕圖案；形成第二抗蝕圖案，其中該第二抗蝕圖案具有對應該光穿透部分和該第二光半穿透部分之開口區；及 使用該第二抗蝕圖案當作遮罩，蝕刻該光遮蔽膜和該第一光半穿透膜，然後移除該第二抗蝕圖案，於是形成該光穿透部分、該光遮蔽部分、該第一光半穿透部分、及該第二光半穿透部分。 A method of fabricating a fourth-order reticle comprising a light-shielding portion, a light-transmissive portion, and first and second light-transmissive portions having different light transmittances, the method comprising the steps of: Forming a mask blank plate, wherein the first light semi-transmissive film, the second light semi-transmissive film, and the light shielding film are sequentially formed on the transparent substrate, the first light semi-transmissive film and the light shielding film and the The second light semi-transmissive film is made of a material having corrosion resistance to each other; a first resist pattern is formed on the light shielding film of the mask blank, the first resist pattern having a corresponding a light transmissive portion and an open region of the first light transmissive portion; using the first resist pattern as a mask, etching the light shielding film, then etching the second light semi-transmissive film, and then stripping a first resist pattern; forming a second resist pattern, wherein the second resist pattern has an open region corresponding to the light penetrating portion and the second light semi-transmissive portion; Using the second resist pattern as a mask, etching the light shielding film and the first light semi-transmissive film, and then removing the second resist pattern, thereby forming the light penetrating portion, the light shielding portion, The first light semi-transmissive portion and the second light semi-transmissive portion. 一種製造四階光罩之方法，該四階光罩包含光遮蔽部分、光穿透部分、及具有不同光穿透率之第一和第二光半穿透部分，該方法包含下列各步驟：製備光罩坯料板，其中第一光半穿透膜、第二光半穿透膜、和光遮蔽膜係依序形成在透明基板上，該第一光半穿透膜和該光遮蔽膜與該第二光半穿透膜係由對彼此的蝕刻具有抗蝕性的材料製成；在該光罩坯料板的該光遮蔽膜上形成第一抗蝕圖案，該第一抗蝕圖案具有對應該光穿透部分和該第一光半穿透部分之開口區；使用該第一抗蝕圖案當作遮罩，蝕刻該光遮蔽膜，然後剝除該第一抗蝕圖案，接著再使用該光遮蔽膜當作遮罩，蝕刻該第二光半穿透膜；形成第二抗蝕圖案，其中該第二抗蝕圖案具有對應該光穿透部分和該第二光半穿透部分之開口區；及使用該第二抗蝕圖案當作遮罩，蝕刻該光遮蔽膜和該第一光半穿透膜，然後移除該第二抗蝕圖案，於是形成該光穿透部分、該光遮蔽部分、該第一光半穿透部分、及該第二光半穿透部分。 A method of fabricating a fourth-order reticle comprising a light-shielding portion, a light-transmissive portion, and first and second light-transmissive portions having different light transmittances, the method comprising the steps of: Forming a mask blank plate, wherein the first light semi-transmissive film, the second light semi-transmissive film, and the light shielding film are sequentially formed on the transparent substrate, the first light semi-transmissive film and the light shielding film and the The second light semi-transmissive film is made of a material having corrosion resistance to each other; a first resist pattern is formed on the light shielding film of the mask blank, the first resist pattern having a corresponding a light-transmissive portion and an open region of the first light-transmissive portion; using the first resist pattern as a mask, etching the light-shielding film, then stripping the first resist pattern, and then using the light Masking the film as a mask, etching the second light semi-transmissive film; forming a second resist pattern, wherein the second resist pattern has an opening region corresponding to the light penetrating portion and the second light transmissive portion And etching the light shielding film and the first using the second resist pattern as a mask Semi-permeable membrane, and then removing the second resist pattern, thereby forming the light penetrating part, the light shielding portion, a semi-transmission portion of the first light and the second light semi-transmission portion. 如申請專利範圍第6項或第7項之方法，其中該第一光 半穿透膜和該光遮蔽膜係可以藉由相同的蝕刻劑來蝕刻。 The method of claim 6 or 7, wherein the first light The semi-transparent film and the light shielding film can be etched by the same etchant. 如申請專利範圍第8項之方法，其中該第二光半穿透膜係由含有矽化鉬當作主要組成之材料製成，而該第一光半穿透膜和該光遮蔽膜各自係由含有鉻當作主要組成之材料製成。 The method of claim 8, wherein the second light semi-transmissive film is made of a material containing molybdenum molybdenum as a main component, and the first light semi-transmissive film and the light shielding film are each Made of chrome as the main component. 一種光罩坯料板，用於申請專利範圍第6項或第7項之製造四階光罩之方法中，其中該第一光半穿透膜、該第二光半穿透膜、和該光遮蔽膜係依序堆疊在透明基板上。 A reticle blank plate for use in a method of manufacturing a fourth-order reticle of claim 6 or 7, wherein the first light semi-transmissive film, the second light semi-transmissive film, and the light The masking film is sequentially stacked on the transparent substrate. 一種四階光罩，該四階光罩包含光遮蔽部分、光穿透部分、及分別具有不同光穿透率之第一光半穿透部分和第二光半穿透部分，該光遮蔽部分、該第一光半穿透部分、和該第二光半穿透部分，係各自在轉移標的物上形成膜厚階段地或連續地不同的抗蝕圖案，其特徵為：該第一光半穿透部分係構成為在透明基板的表面設置光半穿透性的第一光半穿透膜，該第二光半穿透部分係構成為在該透明基板的表面設置光半穿透性的第二光半穿透膜，該第一光半穿透膜及該光遮蔽膜係對彼此的蝕刻具有抗蝕性的膜，該第二光半穿透膜及該光遮蔽膜係係由可利用同種的蝕刻氣體或蝕刻液來蝕刻的材料製成，該第二光半穿透部分及該第一光半穿透部分係曝光光的光穿透率不同， 該光遮蔽部分係構成為在該透明基板的表面堆疊該第一光半穿透膜、該光遮蔽膜、及該第二光半穿透膜。 A fourth-order reticle comprising a light shielding portion, a light transmitting portion, and a first light semi-transmissive portion and a second light semi-transmissive portion respectively having different light transmittances, the light shielding portion The first light semi-transmissive portion and the second light semi-transmissive portion each form a resist pattern having a film thickness stepwise or continuously different on the transfer target, wherein the first light half The penetrating portion is configured to provide a light semi-transmissive first light semi-transmissive film on the surface of the transparent substrate, and the second light semi-transmissive portion is configured to provide light semi-transparent on the surface of the transparent substrate. a second light semi-transmissive film, the first light semi-transmissive film and the light shielding film are etched with respect to each other, the second light semi-transmissive film and the light shielding film system are The material is etched by the same etching gas or etching liquid, and the light transmittance of the second light semi-transmissive portion and the first light semi-transmissive portion is different. The light shielding portion is configured to stack the first light semi-transparent film, the light shielding film, and the second light semi-transmissive film on a surface of the transparent substrate. 如申請專利範圍第11項之四階光罩，其中在轉移標的物上，形成如下的抗蝕圖案：與該光遮蔽部分對應的部分的膜厚最厚，在與該第一光半穿透部分對應的部分膜厚次厚，在與該第二光半穿透部分對應的部分膜厚最薄，在與該光穿透部分對應的部分沒有膜。 A fourth-order photomask according to claim 11 wherein, in the transfer target, a resist pattern is formed: a portion corresponding to the light shielding portion has a thickest film thickness and is semi-transparent with the first light. The portion of the corresponding portion is thicker in thickness, and the portion corresponding to the second semi-transmissive portion has the thinnest film thickness, and the portion corresponding to the light-transmitting portion has no film. 如申請專利範圍第11項或第12項之四階光罩，其中該第一光半穿透部分及該第二光半穿透部分的曝光光的光穿透率係20~50%。 For example, in the fourth-order reticle of claim 11 or 12, the light transmittance of the exposure light of the first light semi-transmissive portion and the second light semi-transmissive portion is 20-50%. 如申請專利範圍第11項或第12項之四階光罩，其中該第一光半穿透膜係含有矽化鉬，而該第二光半穿透膜和該光遮蔽膜係以鉻當作主要組成。 A fourth-order photomask according to claim 11 or 12, wherein the first light semi-transmissive film contains molybdenum molybdenum, and the second light semi-transparent film and the light shielding film are treated with chromium The main components. 一種四階光罩，該四階光罩包含光遮蔽部分、光穿透部分、及分別具有不同光穿透率之第一光半穿透部分和第二光半穿透部分，該光遮蔽部分、該第一光半穿透部分、和該第二光半穿透部分，係各自在轉移標的物上形成膜厚階段地或連續地不同的抗蝕圖案，其特徵為：該第一光半穿透部分係構成為在透明基板的表面設置光半穿透性的第一光半穿透膜，該第二光半穿透部分係構成為在該透明基板的表面堆疊光半穿透性的第一光半穿透膜及光半穿透性的第二光半穿透膜，該光遮蔽部分係構成為在該透明基板的表面堆疊該 第一光半穿透膜、該第二光半穿透膜、及該光遮蔽膜，該第二光半穿透膜及該光遮蔽膜係對彼此的蝕刻具有抗蝕性的膜，該第一光半穿透膜及該光遮蔽膜係係由可利用同種的蝕刻氣體或蝕刻液來蝕刻的材料製成。 A fourth-order reticle comprising a light shielding portion, a light transmitting portion, and a first light semi-transmissive portion and a second light semi-transmissive portion respectively having different light transmittances, the light shielding portion The first light semi-transmissive portion and the second light semi-transmissive portion each form a resist pattern having a film thickness stepwise or continuously different on the transfer target, wherein the first light half The penetrating portion is configured to provide a light semi-transmissive first light semi-transmissive film on the surface of the transparent substrate, the second light semi-transmissive portion being configured to stack light semi-transparent on the surface of the transparent substrate a first light semi-transmissive film and a light semi-transmissive second light semi-transmissive film, the light shielding portion being configured to stack the surface of the transparent substrate a first light semi-transmissive film, the second light semi-transmissive film, and the light shielding film, wherein the second light semi-transmissive film and the light shielding film are etched with respect to each other, the first The light semi-transmissive film and the light shielding film are made of a material that can be etched using the same etching gas or etching solution. 如申請專利範圍第15項之四階光罩，其中在轉移標的物上，形成如下的抗蝕圖案：與該光遮蔽部分對應的部分的膜厚最厚，在與該第二光半穿透部分對應的部分膜厚次厚，在與該第一光半穿透部分對應的部分膜厚最薄，在與該光穿透部分對應的部分沒有膜。 A fourth-order photomask according to claim 15 wherein, in the transfer target, a resist pattern is formed: a portion corresponding to the light shielding portion has a thickest film thickness and is semi-transparent with the second light. The portion of the corresponding portion is thicker in thickness, and the portion corresponding to the first light-transmissive portion has the thinnest film thickness, and the portion corresponding to the light-transmitting portion has no film. 如申請專利範圍第15項或第16項之四階光罩，其中該第一光半穿透部分及該第二光半穿透部分的曝光光的光穿透率係20~50%。 For example, in the fourth-order photomask of claim 15 or 16, wherein the first light semi-transmissive portion and the second light semi-transmissive portion have a light transmittance of 20 to 50%. 如申請專利範圍第15項或第16項之四階光罩，其中該第二光半穿透膜係含有矽化鉬，而該第一光半穿透膜和該光遮蔽膜係以鉻當作主要組成。The fourth-order photomask of claim 15 or 16, wherein the second semi-transmissive film contains molybdenum molybdenum, and the first semi-transparent film and the light shielding film are treated with chromium The main components.
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