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TWI414591B - Thermal interface material and preparation method thereof - Google Patents

Thermal interface material and preparation method thereof Download PDF

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Publication number
TWI414591B
TWI414591B TW098102402A TW98102402A TWI414591B TW I414591 B TWI414591 B TW I414591B TW 098102402 A TW098102402 A TW 098102402A TW 98102402 A TW98102402 A TW 98102402A TW I414591 B TWI414591 B TW I414591B
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conductive particles
thermal interface
substrate
interface material
array
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TW098102402A
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TW201028462A (en
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姚湲
范守善
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鴻海精密工業股份有限公司
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    • H10W40/251
    • CCHEMISTRY; METALLURGY
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    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08Materials not undergoing a change of physical state when used
    • C09K5/14Solid materials, e.g. powdery or granular
    • H10W40/25

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  • Combustion & Propulsion (AREA)
  • Thermal Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

A thermal interface material includes an array of carbon nanotubes, a first matrix material and a plurality of conductive particles. The first matrix material is disposed on at least one end of the array of carbon nanotubes. The plurality of conductive particles are incorporated into the first matrix material. A part of the plurality of conductive particles are contacted With the array of carbon nanotubes. The thermal interface material has small contact thermal resistance and high thermal conductivity. The present disclosure also provides a method for making the thermal interface material.

Description

熱介面材料及其製備方法 Thermal interface material and preparation method thereof

本發明涉及一種熱介面材料及其製備方法,尤其涉及一種奈米碳管熱介面材料及其製備方法。 The invention relates to a thermal interface material and a preparation method thereof, in particular to a nano carbon tube thermal interface material and a preparation method thereof.

近年來,隨著半導體器件集成工藝之快速發展,半導體器件之集成化程度越來越高,器件體積變得越來越小,其對散熱之需求越來越高,高效率散熱已成為一個越來越重要之問題。為滿足散熱需要,通常在散熱器與半導體器件之間,增加一導熱係數較高之熱介面材料,可使散熱器與半導體器件之間接觸更加緊密,增強半導體器件與散熱器之間之熱傳導效果。 In recent years, with the rapid development of semiconductor device integration technology, the integration degree of semiconductor devices is getting higher and higher, the device volume is getting smaller and smaller, and the demand for heat dissipation is getting higher and higher, and high efficiency heat dissipation has become a more and more The more important the problem. In order to meet the heat dissipation requirement, a thermal interface material with a high thermal conductivity is usually added between the heat sink and the semiconductor device, so that the contact between the heat sink and the semiconductor device is tighter, and the heat conduction between the semiconductor device and the heat sink is enhanced. .

先前之熱介面材料將導熱係數較高之顆粒分散於聚合物基體以形成複合材料,如將石墨、氮化硼、氧化矽、氧化鋁、銀或其他金屬等顆粒分散於聚合物基體中。該類材料之普遍缺陷係整體材質導熱係數較小,一般為1W/m.K,這已經不能適應半導體集成化程度之提高對散熱之需求。增加聚合物基體之導熱顆粒含量,使顆粒與顆粒之間儘量相互接觸,可以增加整個複合材料之導熱係數,如某些特殊之熱介面材料的導熱係數因此可達到4 W/m.K-8 W/m.K,然而,聚合物基體之導熱顆粒含量增加至一定程度時,會使聚合物基體之性能發生改變,如果聚合物基體係橡膠,該橡 膠會變得較硬,失去應有之柔韌性,大大降低熱介面材料介面接觸性能,從而使散熱器與半導體器件之間之熱阻增大。 Previous thermal interface materials disperse particles having a higher thermal conductivity in a polymer matrix to form a composite, such as particles of graphite, boron nitride, cerium oxide, aluminum oxide, silver, or other metals dispersed in a polymer matrix. The general defect of this type of material is that the thermal conductivity of the overall material is small, generally 1W/m. K, this has been unable to adapt to the need for heat dissipation due to the increased level of semiconductor integration. Increasing the content of the thermal conductive particles of the polymer matrix so that the particles and the particles are in contact with each other as much as possible can increase the thermal conductivity of the entire composite material, such as the thermal conductivity of some special thermal interface materials, so that it can reach 4 W/m. K-8 W/m. K, however, when the content of the thermally conductive particles of the polymer matrix is increased to a certain extent, the properties of the polymer matrix are changed. If the polymer-based system rubber, the rubber The glue becomes harder, loses its flexibility, and greatly reduces the interface contact performance of the thermal interface material, thereby increasing the thermal resistance between the heat sink and the semiconductor device.

為改善熱介面材料之導熱性能,提高導熱係數,各種材料被廣泛試驗。奈米碳管之長徑比大,長度可為直徑之幾千倍;奈米碳管之強度高,為鋼之一百倍,但重量只有鋼之六分之一;奈米碳管之韌性與彈性極佳,且具有優異之徑向導熱性能,因此,將奈米碳管作為導熱粒子分散於聚合物基體中以形成奈米碳管熱介面材料,成為熱介面材料研究之一重要方向。惟,藉由所述分散法製備之奈米碳管熱介面材料中之奈米碳管雜亂排列,不利於充分利用奈米碳管之徑向導熱性能,使得該奈米碳管熱介面材料之導熱性能提高有限。 In order to improve the thermal conductivity of the thermal interface material and improve the thermal conductivity, various materials have been extensively tested. The carbon nanotubes have a large aspect ratio and a length of several thousand times. The strength of the carbon nanotubes is one hundred times that of steel, but the weight is only one-sixth of that of steel; the toughness of carbon nanotubes Excellent in elasticity and excellent in thermal conductivity. Therefore, dispersing carbon nanotubes as thermally conductive particles in a polymer matrix to form a carbon nanotube thermal interface material has become an important direction for thermal interface materials research. However, the arrangement of the carbon nanotubes in the carbon nanotube thermal interface material prepared by the dispersion method is not suitable for fully utilizing the radial thermal conductivity of the carbon nanotubes, so that the carbon nanotube thermal interface material is Thermal conductivity is limited.

為充分利用奈米碳管之徑向導熱性能,業界通常將奈米碳管陣列包埋於基體材料中。然,奈米碳管陣列之高度較小,通常不超過毫米量級,在包埋之過程中,奈米碳管之端部很容易被埋在基體材料中,無法達到與熱源及散熱部件之間之良好接觸,從而使得奈米碳管熱介面材料之表面存在很大之接觸熱阻,降低了其實際導熱性能。 In order to make full use of the radial thermal conductivity of the carbon nanotubes, the industry usually encloses the carbon nanotube array in the matrix material. However, the height of the carbon nanotube array is small, usually not exceeding the order of millimeters. During the embedding process, the end of the carbon nanotube is easily buried in the matrix material, and cannot reach the heat source and the heat dissipating component. Good contact between the two, so that the surface of the carbon nanotube thermal interface material has a large contact thermal resistance, reducing its actual thermal conductivity.

為克服所述缺陷,通常會使用摩擦或者刻蝕之方法使埋在基體材料中之奈米碳管“露頭”。如2003年6月26日於美國公開的,公開號為20030117770A1,名稱為“Carbon Nanotube Thermal Interface Structures”之專利申請揭示了一種熱介面材料及其製備方法。所述熱介面材料包括至少一奈米碳管(束)陣列及一填充於該至少一奈米碳管(束)陣列之聚合物。該至少一奈米碳管(束)陣列中之奈米碳管之間互相平行,且至少一奈米碳管(束)陣 列之排列方向與其熱傳導之方向平行。該熱介面材料之製備方法為:將聚合物注入奈米碳管(束)陣列周圍,以支撐奈米碳管(束)陣列,通過機械研磨或化學腐蝕去除生長奈米碳管(束)陣列之基底,以及通過化學機械拋光或機械研磨去除多餘之聚合物,形成熱介面材料。 In order to overcome the drawbacks, the carbon nanotubes buried in the matrix material are usually "exposed" by friction or etching. A thermal interface material and a method of making the same are disclosed in the patent application entitled "Carbon Nanotube Thermal Interface Structures", published in U.S. Patent No. 2,030,117, 770, issued toJ. The thermal interface material includes at least one carbon nanotube (bundle) array and a polymer filled in the at least one carbon nanotube (bundle) array. The carbon nanotubes in the at least one carbon nanotube (bundle) array are parallel to each other, and at least one carbon nanotube (beam) array The columns are arranged in a direction parallel to the direction of their heat conduction. The thermal interface material is prepared by injecting a polymer around a carbon nanotube (beam) array to support an array of carbon nanotubes (beams), and removing the growth carbon nanotube (beam) array by mechanical grinding or chemical etching. The substrate is removed and the excess polymer is removed by chemical mechanical polishing or mechanical milling to form a thermal interface material.

使用所述專利申請中所採用之方法製備之熱介面材料,由於採用化學機械拋光或機械研磨之方法去除多餘之聚合物,使得奈米碳管露出聚合物之表面,其導熱效率有較大之提高,惟,由於化學機械拋光或機械研磨過程會造成熱介面材料之表面平整度下降,使得該熱介面材料與熱源之接觸熱阻較大,降低了散熱效率。另外,採用化學機械拋光或機械研磨處理工藝,使得其生產成本較高。 The thermal interface material prepared by the method used in the patent application removes excess polymer by chemical mechanical polishing or mechanical grinding, so that the carbon nanotubes are exposed on the surface of the polymer, and the heat conduction efficiency thereof is large. However, due to the chemical mechanical polishing or mechanical grinding process, the surface flatness of the thermal interface material is lowered, so that the thermal resistance of the contact between the thermal interface material and the heat source is large, and the heat dissipation efficiency is lowered. In addition, the use of chemical mechanical polishing or mechanical grinding process makes its production cost higher.

有鑒於此,確有必要提供一種可使奈米碳管與熱源接觸良好、導熱率高之熱介面材料及其製造方法。 In view of the above, it is indeed necessary to provide a thermal interface material which can make a carbon nanotube contact with a heat source and has a high thermal conductivity and a method for producing the same.

一種熱介面材料,其包括一奈米碳管陣列及設置於所述奈米碳管陣列一端之一第一基體,其中,所述熱介面材料進一步包括分佈於所述第一基體中之複數個第一導熱粒子,該複數個第一導熱粒子之部分導熱粒子與所述奈米碳管陣列相接觸。 A thermal interface material comprising an array of carbon nanotubes and a first substrate disposed at one end of the array of carbon nanotubes, wherein the thermal interface material further comprises a plurality of the plurality of distributions in the first substrate The first thermally conductive particles, the plurality of thermally conductive particles of the plurality of first thermally conductive particles are in contact with the array of carbon nanotubes.

一種熱介面材料之製備方法,其包括下述步驟:提供一奈米碳管陣列;將一第一基體設置於所述奈米碳管陣列之一端;以及添加複數個第一導熱粒子於該第一基體中,使該複數個第一導熱粒子之部分導熱粒子與所述奈米碳管陣列接觸,形成該熱介面材料。 A method for preparing a thermal interface material, comprising the steps of: providing a carbon nanotube array; placing a first substrate at one end of the carbon nanotube array; and adding a plurality of first thermally conductive particles to the first In a substrate, a portion of the plurality of thermally conductive particles of the first thermally conductive particles are brought into contact with the array of carbon nanotubes to form the thermal interface material.

與先前技術相比較,所述熱介面材料由於複數個第一導熱粒子與奈米碳管陣列相接觸,增加了該熱介面材料與熱源之實際熱接觸面積,避免因熱介面材料之平整度下降,而造成之接觸熱阻較大,從而提高了導熱效率。 Compared with the prior art, the thermal interface material increases the actual thermal contact area of the thermal interface material and the heat source due to the contact of the plurality of first heat conductive particles with the carbon nanotube array, thereby avoiding the decrease of the flatness of the thermal interface material. And the contact heat resistance is large, thereby improving the heat conduction efficiency.

所述熱介面材料之製備方法,採用添加複數個第一導熱粒子於第一基體中,使得熱介面材料與熱源形成良好之導熱通道;該方法與採用摩擦或者刻蝕之方法使得熱介面材料與熱源形成良好之導熱通道之方法相比,具有操作簡單,成本低之特點。 The method for preparing the thermal interface material comprises adding a plurality of first heat conductive particles in the first substrate, so that the thermal interface material and the heat source form a good heat conduction channel; the method and the friction or etching method enable the thermal interface material to Compared with the method in which the heat source forms a good heat conduction channel, it has the characteristics of simple operation and low cost.

2‧‧‧奈米碳管陣列 2‧‧‧Nano Carbon Tube Array

8‧‧‧有機物 8‧‧‧Organic

10‧‧‧熱介面材料 10‧‧‧Hot interface materials

12‧‧‧基底 12‧‧‧Base

14‧‧‧催化劑薄膜 14‧‧‧ catalyst film

42‧‧‧第一基體 42‧‧‧First substrate

44‧‧‧第二基體 44‧‧‧Second substrate

62‧‧‧第一導熱粒子 62‧‧‧First thermal conductive particles

64‧‧‧第二導熱粒子 64‧‧‧Second thermal particles

圖1係本發明第一實施例提供之熱介面材料之結構示意圖。 1 is a schematic structural view of a thermal interface material according to a first embodiment of the present invention.

圖2係本發明第二實施例提供之熱介面材料製備方法之奈米碳管陣列的結構示意圖。 2 is a schematic structural view of a carbon nanotube array of a method for preparing a thermal interface material according to a second embodiment of the present invention.

圖3係本發明第二實施例提供之熱介面材料製備方法之流程圖。 3 is a flow chart of a method for preparing a thermal interface material according to a second embodiment of the present invention.

下面將結合附圖對本發明提供之熱介面材料及其製備方法作進一步之詳細說明。 The thermal interface material provided by the present invention and its preparation method will be further described in detail below with reference to the accompanying drawings.

請參閱圖1,本發明第一實施例提供一種熱介面材料10,其包括一奈米碳管陣列2、一有機物8、一第一基體42、一第二基體44、分散於第一基體42中之複數個第一導熱粒子62、分散於第二基體44中之複數個第二導熱粒子64,以及一有機物8。其中,所述第一基體42與第二基體44分別設置於所述奈米碳管陣列2之兩端,所述有機物8填充於所述奈米碳管陣列2中之奈米碳管之間之空隙中。 Referring to FIG. 1 , a first embodiment of the present invention provides a thermal interface material 10 including a carbon nanotube array 2 , an organic material 8 , a first substrate 42 , a second substrate 44 , and a first substrate 42 . The plurality of first thermally conductive particles 62, the plurality of second thermally conductive particles 64 dispersed in the second substrate 44, and an organic substance 8. The first substrate 42 and the second substrate 44 are respectively disposed at two ends of the carbon nanotube array 2, and the organic material 8 is filled between the carbon nanotubes in the carbon nanotube array 2. In the gap.

所述奈米碳管陣列2之兩端為一第一端及與該第一端相對設置之第二端。所述奈米碳管陣列2之高度可根據實際應用之需要而確定。該奈米碳管陣列2包括複數個奈米碳管,該奈米碳管包括單壁奈米碳管、雙壁奈米碳管及多壁奈米碳管中之一種或其任意組合。本實施例中,所述奈米碳管係多壁奈米碳管。所述奈米碳管陣列2優選為超順排奈米碳管陣列,即該奈米碳管陣列2中之絕大多數奈米碳管相互平行。 The two ends of the carbon nanotube array 2 are a first end and a second end opposite to the first end. The height of the carbon nanotube array 2 can be determined according to the needs of the actual application. The carbon nanotube array 2 includes a plurality of carbon nanotubes including one of a single-walled carbon nanotube, a double-walled carbon nanotube, and a multi-walled carbon nanotube, or any combination thereof. In this embodiment, the carbon nanotubes are multi-walled carbon nanotubes. The carbon nanotube array 2 is preferably an array of super-sequential carbon nanotubes, i.e., the majority of the carbon nanotubes in the array of carbon nanotubes 2 are parallel to each other.

所述第一基體42設置於所述奈米碳管陣列2之第一端,該奈米碳管陣列2之至少部分奈米碳管之第一端伸入該第一基體42中。所述第二基體44設置於所述奈米碳管陣列2之第二端,該奈米碳管陣列2之至少部分奈米碳管之第二端伸入該第二基體44中。所述第一基體42及第二基體44之厚度可根據實際應用之需求而定。該第一基體42與第二基體44之材質分別為相變材料、樹脂材料及導熱膠中之一種或其任意組合。所述相變材料為石蠟。所述樹脂材料為環氧樹脂、丙烯酸樹脂、矽樹脂。所述第一基體42及第二基體44之材料之選擇,應根據實際應用確定。當第一基體42之溫度高於該第一基體42之熔點時,該第一基體42為熔融態,以保證所述熱介面材料10與熱源形成良好之接觸,提高導熱效率。該第二基體44處於熔點時之性質與第一基體42處於熔點時之性質相同。本實施例中,所述第一基體42及第二基體44之材料均為石蠟。 The first substrate 42 is disposed at the first end of the carbon nanotube array 2, and the first end of at least a portion of the carbon nanotubes of the carbon nanotube array 2 extends into the first substrate 42. The second substrate 44 is disposed at the second end of the carbon nanotube array 2, and the second end of at least a portion of the carbon nanotubes of the carbon nanotube array 2 extends into the second substrate 44. The thickness of the first substrate 42 and the second substrate 44 may be determined according to the needs of practical applications. The materials of the first base body 42 and the second base body 44 are one of a phase change material, a resin material and a thermal conductive adhesive, or any combination thereof. The phase change material is paraffin wax. The resin material is an epoxy resin, an acrylic resin, or a enamel resin. The selection of the materials of the first substrate 42 and the second substrate 44 should be determined according to practical applications. When the temperature of the first substrate 42 is higher than the melting point of the first substrate 42, the first substrate 42 is in a molten state to ensure that the thermal interface material 10 forms good contact with the heat source, thereby improving heat conduction efficiency. The second substrate 44 has the same properties at the melting point as the first substrate 42 at the melting point. In this embodiment, the materials of the first substrate 42 and the second substrate 44 are all paraffin wax.

所述複數個第一導熱粒子62分散於所述第一基體42中,且部分導熱粒子62與奈米碳管陣列2之第一端接觸。所述複數個第二導熱粒子64分散於第二基體44中,且部分第二導熱粒子64與奈米碳管陣列2之第二端接觸。所述第一導熱粒子62與第二導熱粒子64分 別為金屬、合金、氧化物及非金屬粒子等粒子中之一種或其任意組合。所述金屬為錫、銅、銦、鉛、銻、金、銀、鉍及鋁等金屬中之一種或其任意組合。所述合金為錫、銅、銦、鉛、銻、金、銀、鉍及鋁等金屬任意組合之合金中之一種或多種。所述氧化物為金屬氧化物及氧化矽等氧化物中之一種或其任意組合。所述非金屬粒子為石墨及矽等非金屬粒子中之一種或其任意組合。所述第一導熱粒子62及第二導熱粒子64之直徑分別為10奈米-10000奈米,其直徑之具體大小視情況而定。所述第一導熱粒子62及第二導熱粒子64之形狀分別為棒狀、片狀、粉末及顆粒等形狀中之一種或其任意組合。本實施例中,所述第一導熱粒子62及第二導熱粒子64係鋁粉,其直徑均為10奈米-1000奈米。 The plurality of first thermally conductive particles 62 are dispersed in the first substrate 42 and a portion of the thermally conductive particles 62 are in contact with the first end of the carbon nanotube array 2. The plurality of second thermally conductive particles 64 are dispersed in the second substrate 44, and a portion of the second thermally conductive particles 64 are in contact with the second end of the carbon nanotube array 2. The first heat conductive particles 62 and the second heat conductive particles 64 It is one of particles such as metals, alloys, oxides and non-metal particles or any combination thereof. The metal is one of a metal such as tin, copper, indium, lead, antimony, gold, silver, antimony or aluminum or any combination thereof. The alloy is one or more of alloys of any combination of metals such as tin, copper, indium, lead, antimony, gold, silver, bismuth and aluminum. The oxide is one of an oxide of a metal oxide and cerium oxide or any combination thereof. The non-metallic particles are one of graphite or a non-metallic particle such as ruthenium or any combination thereof. The diameters of the first heat conductive particles 62 and the second heat conductive particles 64 are respectively from 10 nm to 10,000 nm, and the specific size of the diameter is determined as the case may be. The shapes of the first heat conductive particles 62 and the second heat conductive particles 64 are respectively one of a shape of a rod, a sheet, a powder, and a particle, or any combination thereof. In this embodiment, the first heat conductive particles 62 and the second heat conductive particles 64 are aluminum powders each having a diameter of 10 nm to 1000 nm.

所述有機物8填充於所述奈米碳管陣列2之奈米碳管之間之空隙中,該奈米碳管陣列2之兩端露出該有機物8之表面。該有機物8與所述第一基體42及第二基體44間隔設置或接觸設置。所述有機物8為矽膠系列、聚乙烯乙二醇、聚酯、環氧樹脂系列、缺氧膠系列、壓克力膠系列或橡膠等。所述有機物8之材料與所述第一基體42或第二基體44材料可以相同。本實施例中,所述有機物8與所述第一基體42及第二基體44接觸設置。所述有機物8為一雙組分矽酮彈性體。 The organic material 8 is filled in a space between the carbon nanotubes of the carbon nanotube array 2, and both ends of the carbon nanotube array 2 expose the surface of the organic material 8. The organic material 8 is disposed at or spaced apart from the first base body 42 and the second base body 44. The organic matter 8 is a silicone rubber series, a polyethylene glycol, a polyester, an epoxy resin series, an anoxic rubber series, an acrylic rubber series or a rubber. The material of the organic material 8 may be the same as the material of the first substrate 42 or the second substrate 44. In this embodiment, the organic material 8 is disposed in contact with the first base body 42 and the second base body 44. The organic material 8 is a two-component anthrone elastomer.

本實施例之熱介面材料10應用於電子器件時,當溫度加熱到所述第一基體42及第二基體44之熔點以上時,該第一基體42及第二基體44就會發生相變。此時,熔融態之第一基體42及第二基體44及分散於其中之所述複數個第一導熱粒子62及複數個第二導熱粒子64能夠與電子器件之介面直接接觸,因此,增加了與電子器件之 實際熱接觸面積,避免因奈米碳管陣列2中之奈米碳管之端部參差不齊,而造成接觸熱阻較大,提高了導熱效率。另外,由於部分第一導熱粒子62及複數個第二導熱粒子64與奈米碳管陣列2之兩端直接接觸,使得所述奈米碳管陣列2中之奈米碳管通過該複數個第一導熱粒子62及該複數個第二導熱粒子64與電子器件相接觸,確保奈米碳管之徑向導熱性能得到充分發揮,以提高該熱介面材料10之導熱率,從而提高整個電子器件之散熱效果。 When the thermal interface material 10 of the present embodiment is applied to an electronic device, when the temperature is heated above the melting points of the first substrate 42 and the second substrate 44, the first substrate 42 and the second substrate 44 undergo a phase change. At this time, the first substrate 42 and the second substrate 44 in the molten state and the plurality of first heat conductive particles 62 and the plurality of second heat conductive particles 64 dispersed therein can directly contact the interface of the electronic device, thereby increasing With electronic devices The actual thermal contact area avoids the unevenness of the end of the carbon nanotubes in the carbon nanotube array 2, resulting in a large contact thermal resistance and improved thermal conductivity. In addition, since a portion of the first thermally conductive particles 62 and the plurality of second thermally conductive particles 64 are in direct contact with both ends of the carbon nanotube array 2, the carbon nanotubes in the carbon nanotube array 2 pass through the plurality of A thermally conductive particle 62 and the plurality of second thermally conductive particles 64 are in contact with the electronic device to ensure that the radial thermal conductivity of the carbon nanotube is fully utilized to increase the thermal conductivity of the thermal interface material 10, thereby improving the overall electronic device. heat radiation.

可以理解,本實施例提供之熱介面材料可以只有第一基體42或第二基體44。另外,本實施例提供之熱介面材料也可以不填充有機物8。 It can be understood that the thermal interface material provided in this embodiment may have only the first substrate 42 or the second substrate 44. In addition, the thermal interface material provided in this embodiment may not be filled with the organic material 8.

請一併參閱圖1、圖2及圖3,本發明第二實施例提供一種熱介面材料之製備方法,其包括以下步驟: Referring to FIG. 1 , FIG. 2 and FIG. 3 , a second embodiment of the present invention provides a method for preparing a thermal interface material, which includes the following steps:

步驟一:提供一奈米碳管陣列2。 Step 1: Provide a carbon nanotube array 2.

所述奈米碳管陣列2具有一第一端及與該第一端相對設置之第二端。該奈米碳管陣列2還具有一基底12。該基底12與該奈米碳管陣列2之第二端相連設置,與該奈米碳管陣列2之第一端相對設置。所述奈米碳管陣列2之高度可根據實際應用之需要而確定。該奈米碳管陣列2包括複數個奈米碳管,該奈米碳管包括單壁奈米碳管、雙壁奈米碳管及多壁奈米碳管中之一種或其任意組合。本實施例中,所述奈米碳管係多壁奈米碳管。所述奈米碳管陣列2係超順排奈米碳管陣列,即該奈米碳管陣列2中之絕大多數奈米碳管相互平行。 The carbon nanotube array 2 has a first end and a second end disposed opposite the first end. The carbon nanotube array 2 also has a substrate 12. The substrate 12 is disposed adjacent to the second end of the carbon nanotube array 2 and disposed opposite the first end of the carbon nanotube array 2. The height of the carbon nanotube array 2 can be determined according to the needs of the actual application. The carbon nanotube array 2 includes a plurality of carbon nanotubes including one of a single-walled carbon nanotube, a double-walled carbon nanotube, and a multi-walled carbon nanotube, or any combination thereof. In this embodiment, the carbon nanotubes are multi-walled carbon nanotubes. The carbon nanotube array 2 is a super-sequential carbon nanotube array, that is, most of the carbon nanotubes in the carbon nanotube array 2 are parallel to each other.

本實施例中提供之奈米碳管陣列2之製備方法採用化學氣相沈積 法,其具體包括以下步驟:首先,在一基底12上形成一層均勻之催化劑薄膜14。該步驟可通過熱沈積法、電子束沈積法或濺射法等方法來實現。基底12之材料可用玻璃、石英、矽或氧化鋁。本實施例採用多孔矽,該多孔矽表面有一層多孔層,該多孔層中具有複數個孔,該複數個孔之直徑極小,一般小於3奈米。該催化劑薄膜14之材料係鐵,也可為其他材料,如氮化鎵、鈷、鎳或其任意組合材料等。 The method for preparing the carbon nanotube array 2 provided in this embodiment adopts chemical vapor deposition The method specifically includes the following steps: First, a uniform catalyst film 14 is formed on a substrate 12. This step can be achieved by a method such as thermal deposition, electron beam deposition or sputtering. The material of the substrate 12 may be glass, quartz, ruthenium or alumina. In this embodiment, a porous crucible is used, and the porous crucible has a porous layer on the surface thereof, and the porous layer has a plurality of pores, and the plurality of pores have a very small diameter, generally less than 3 nm. The material of the catalyst film 14 is iron, and may be other materials such as gallium nitride, cobalt, nickel or any combination thereof.

其次,氧化所述催化劑薄膜14,形成催化劑顆粒,再將分佈有該催化劑顆粒之基底12放入反應爐中,在保護氣體環境下,加熱至700-1000攝氏度,通入碳源氣,生長5分鐘-30分鐘即製備出1微米-500000微米之奈米碳管陣列2。其中,碳源氣可為乙炔、乙烯、甲烷等碳氫化合物,奈米碳管陣列2之高度可通過控制生長時間來控制。所述碳源氣可選用乙炔、乙烯、甲烷等化學性質較活潑之碳氫化合物。所述保護氣體為氮氣或惰性氣體。所述惰性氣體為氦氣、氖氣、氬氣、氪氣或氙氣。本實施例中,所述碳源氣為乙炔,所述保護氣體為氬氣。 Next, the catalyst film 14 is oxidized to form catalyst particles, and the substrate 12 on which the catalyst particles are distributed is placed in a reaction furnace, heated to 700-1000 degrees Celsius in a protective gas atmosphere, and carbon source gas is introduced to grow 5 A micron array of carbon nanotubes of 1 micron to 500,000 micrometers was prepared in minutes to 30 minutes. The carbon source gas may be a hydrocarbon such as acetylene, ethylene or methane, and the height of the carbon nanotube array 2 can be controlled by controlling the growth time. The carbon source gas may be a chemically active hydrocarbon such as acetylene, ethylene or methane. The shielding gas is nitrogen or an inert gas. The inert gas is helium, neon, argon, helium or neon. In this embodiment, the carbon source gas is acetylene, and the shielding gas is argon gas.

可以理解,本實施例提供之奈米碳管陣列10不限於所述製備方法。也可為石墨電極恒流電弧放電沈積法或雷射燒蝕法等。具體可參閱文獻“Self-Oriented Regular Arrays of Carbon Nanotubes and Their Field Emission Properties”(Shoushan Fan et al., Science, 1999, vol. 283, p512-414)、文獻“Isotope Labeling of Carbon Nanotubes and Formation of 12C-13C Nanotube Junctions”(Liang Liu et al., J. Am. Chem. Soc, 2001, 123, 11502-11503)及美國第6,350,488號專 利(申請日係2000年6月9日,公告日係2002年2月26日)。 It can be understood that the carbon nanotube array 10 provided in the embodiment is not limited to the preparation method. It can also be a graphite electrode constant current arc discharge deposition method or a laser ablation method. For details, please refer to the document "Self-Oriented Regular Arrays of Carbon Nanotubes and Their Field Emission Properties" (Shoushan Fan et al., Science, 1999, vol. 283, p512-414), "Isotope Labeling of Carbon Nanotubes and Formation of 12 C- 13 C Nanotube Junctions" (Liang Liu et al., J. Am. Chem. Soc, 2001, 123, 11502-11503) and US Patent No. 6,350, 488 (Application Date June 9, 2000, Announcement Japanese February 26, 2002).

步驟二:將一有機物8填充於所述奈米碳管陣列2之間之空隙中,並使得所述奈米碳管陣列2之第一端露出有機物8之表面。 Step 2: An organic substance 8 is filled in the space between the carbon nanotube arrays 2, and the first end of the carbon nanotube array 2 is exposed to the surface of the organic substance 8.

該步驟具體為:首先,在該奈米碳管陣列2之第一端形成一聚酯片保護層。其次,將具有該保護層之奈米碳管陣列2浸入所述有機物8之溶液或熔融液中,使該有機物8填充該奈米碳管陣列2中之奈米碳管之間之空隙。然後,取出所述奈米碳管陣列2,使該奈米碳管陣列2中填充之有機物8固化或凝固。最後,直接揭去該保護層,使得該奈米碳管陣列2之第一端露出有機物8之表面。其中,所述保護層之形成方法為將一聚酯片置於該奈米碳管陣列2之第一端,並輕壓該聚酯片使該聚酯片與奈米碳管陣列2之第一端緊密接觸,形成該保護層。所述有機物8固化或凝固之方法包括自然乾燥、高溫乾燥或冷卻乾燥。所述有機物8包括矽膠系列、聚乙烯乙二醇、聚酯、環氧樹脂系列、缺氧膠系列、壓克力膠系列或橡膠等。本實施例中,所述有機物8為一雙組分矽酮彈性體。該有機物8之固化方法為自然乾燥。 The step is specifically: first, a polyester sheet protective layer is formed on the first end of the carbon nanotube array 2. Next, the carbon nanotube array 2 having the protective layer is immersed in a solution or a melt of the organic substance 8 so that the organic substance 8 fills a space between the carbon nanotubes in the carbon nanotube array 2. Then, the carbon nanotube array 2 is taken out to solidify or solidify the organic material 8 filled in the carbon nanotube array 2. Finally, the protective layer is directly removed such that the first end of the carbon nanotube array 2 exposes the surface of the organic material 8. Wherein, the protective layer is formed by placing a polyester sheet on the first end of the carbon nanotube array 2, and gently pressing the polyester sheet to make the polyester sheet and the carbon nanotube array 2 One end is in close contact to form the protective layer. The method of solidifying or solidifying the organic matter 8 includes natural drying, high temperature drying or cooling drying. The organic material 8 includes a silicone rubber series, a polyethylene glycol, a polyester, an epoxy resin series, an anoxic rubber series, an acrylic rubber series or a rubber. In this embodiment, the organic substance 8 is a two-component anthrone elastomer. The curing method of the organic material 8 is natural drying.

可以理解,實現所述奈米碳管陣列2之第一端露出有機物8之表面之方法不限於所述之方法,也可通過其他方法使所述奈米碳管陣列2之第一端露出有機物8之表面,如:先將有機物8之溶液或熔融液注入奈米碳管陣列2中,控制有機物8之溶液或熔融液在奈米碳管陣列2中之高度,使奈米碳管陣列之第一端未被有機物8之溶液或熔融液包圍;然後固化有機物8之溶液或熔融液。 It can be understood that the method for realizing the surface of the first end of the carbon nanotube array 2 to expose the surface of the organic material 8 is not limited to the method described, and the first end of the carbon nanotube array 2 may be exposed to organic substances by other methods. The surface of 8 is, for example, first injecting a solution or melt of organic matter 8 into the carbon nanotube array 2, controlling the height of the solution or melt of the organic substance 8 in the carbon nanotube array 2, so that the carbon nanotube array is The first end is not surrounded by a solution or melt of organic matter 8; then the solution or melt of organics 8 is solidified.

步驟三:將一第一基體42設置於所述奈米碳管陣列2之第一端。 Step 3: A first substrate 42 is disposed at the first end of the carbon nanotube array 2.

具體地,採用印刷或刷子刷塗等方法於所述奈米碳管陣列2之第一端塗覆一第一基體42,使該第一基體42與所述有機物8間隔設置或接觸設置,且包埋住該奈米碳管陣列2露出該有機物8表面之第一端。所述第一基體42為相變材料、樹脂材料及導熱膠或其任意組合之混合物。所述相變材料包括石蠟。所述樹脂材料為環氧樹脂、丙烯酸樹脂或矽樹脂。所述第一基體42之材料與有機物8之材料可以相同。本實施例中,所述第一基體42與所述有機物8接觸設置。所述第一基體42為石蠟。 Specifically, a first substrate 42 is coated on the first end of the carbon nanotube array 2 by printing or brushing, and the first substrate 42 is disposed or contacted with the organic material 8 , and The carbon nanotube array 2 is embedded to expose the first end of the surface of the organic material 8. The first substrate 42 is a mixture of a phase change material, a resin material, and a thermal conductive paste or any combination thereof. The phase change material includes paraffin wax. The resin material is an epoxy resin, an acrylic resin or a enamel resin. The material of the first substrate 42 and the material of the organic material 8 may be the same. In this embodiment, the first substrate 42 is disposed in contact with the organic material 8. The first substrate 42 is paraffin wax.

步驟四:添加複數個第一導熱粒子62於所述第一基體42中,使部分第一導熱粒子62與所述奈米碳管陣列2之第一端接觸。 Step 4: Adding a plurality of first heat conductive particles 62 to the first substrate 42 to contact a portion of the first heat conductive particles 62 with the first end of the carbon nanotube array 2.

具體地,將所述複數個第一導熱粒子62撒在所述第一基體42之表面,使該第一基體42之表面佈滿該複數個第一導熱粒子62;加熱該第一基體42之表面至略高於該第一基體42之熔點;此時,所述複數個第一導熱粒子62浸入該第一基體42中,部分第一導熱粒子62與奈米碳管陣列2之第一端相接觸。其中,所述複數個第一導熱粒子62浸入所述第一基體42中之深度,可以通過控制撒在該第一基體42之複數個第一導熱粒子62之數量,使第一導熱粒子62儘量多地包圍奈米碳管陣列2中之至少部分奈米碳管之第一端。 Specifically, the plurality of first heat conductive particles 62 are sprinkled on the surface of the first base body 42 such that the surface of the first base body 42 is covered with the plurality of first heat conductive particles 62; and the first base body 42 is heated. The surface is slightly higher than the melting point of the first substrate 42; at this time, the plurality of first heat conductive particles 62 are immersed in the first substrate 42, and the first heat conductive particles 62 and the first end of the carbon nanotube array 2 are Contact. Wherein, the depth of the plurality of first heat conductive particles 62 immersed in the first base body 42 can be controlled by the number of the plurality of first heat conductive particles 62 sprinkled on the first base body 42 The first end of at least a portion of the carbon nanotubes in the carbon nanotube array 2 is surrounded by a plurality of layers.

所述第一導熱粒子62之材料為金屬、合金、氧化物及非金屬粒子等導熱粒子中之一種或其任意組合。所述金屬為錫、銅、銦、鉛、銻、金、銀、鉍及鋁等金屬中之一種或其任意組合。所述合金為錫、銅、銦、鉛、銻、金、銀、鉍及鋁等金屬任意組合之合金中的一種或多種。所述氧化物為金屬氧化物及氧化矽等氧化物中之一種或其任意組合。所述非金屬粒子為石墨及矽等非金屬粒子 中之一種或其任意組合。所述第一導熱粒子62之直徑為10奈米-10000奈米,其直徑之具體大小視情況而定。所述第一導熱粒子62之形狀為棒狀、片狀、粉末及顆粒等形狀中之一種或其任意組合。本實施例中,所述第一導熱粒子62係鋁粉,其直徑為10奈米-1000奈米。 The material of the first heat conductive particles 62 is one of heat conductive particles such as metals, alloys, oxides, and non-metal particles, or any combination thereof. The metal is one of a metal such as tin, copper, indium, lead, antimony, gold, silver, antimony or aluminum or any combination thereof. The alloy is one or more of alloys of any combination of metals such as tin, copper, indium, lead, antimony, gold, silver, antimony and aluminum. The oxide is one of an oxide of a metal oxide and cerium oxide or any combination thereof. The non-metallic particles are non-metallic particles such as graphite and ruthenium One of them or any combination thereof. The diameter of the first thermally conductive particles 62 is from 10 nm to 10,000 nm, and the specific size of the diameter depends on the case. The shape of the first heat conductive particles 62 is one of a shape of a rod, a sheet, a powder, a particle, or the like, or any combination thereof. In this embodiment, the first heat conductive particles 62 are aluminum powders having a diameter of 10 nm to 1000 nm.

步驟五:將一第二基體44設置於所述奈米碳管陣列2之第二端。 Step 5: A second substrate 44 is disposed at the second end of the carbon nanotube array 2.

該步驟具體包括:首先,去除奈米碳管陣列2之基底12,使奈米碳管陣列2之至少部分奈米碳管之第二端露出所述有機物8之表面。其中,所述去除奈米碳管陣列2之基底12之方法為將基底12直接從該奈米碳管陣列2上撕掉;或採用化學之方法將該基底12去除掉。其次,在該奈米碳管陣列2之第二端塗覆該第二基體44之方法與步驟三中在所述奈米碳管陣列2之第一端塗覆一第一基體42之方法相同。所述第二基體44之材料與第一基體42之材料相同。本實施例中,所述第二基體44與所述有機物8接觸設置。所述第二基體44為石蠟。 The step specifically includes: first, removing the substrate 12 of the carbon nanotube array 2 such that the second end of at least a portion of the carbon nanotubes of the carbon nanotube array 2 is exposed on the surface of the organic material 8. Wherein, the method of removing the substrate 12 of the carbon nanotube array 2 is to directly remove the substrate 12 from the carbon nanotube array 2; or chemically removing the substrate 12. Next, the method of coating the second substrate 44 at the second end of the carbon nanotube array 2 is the same as the method of applying a first substrate 42 at the first end of the carbon nanotube array 2 in the third step. . The material of the second substrate 44 is the same as the material of the first substrate 42. In this embodiment, the second substrate 44 is disposed in contact with the organic material 8. The second substrate 44 is paraffin wax.

步驟六:添加複數個第二導熱粒子64於所述第二基體44中,使部分第二導熱粒子64與所述奈米碳管陣列2之第二端接觸,形成該熱介面材料10。 Step 6: Adding a plurality of second heat conductive particles 64 to the second substrate 44 to contact a portion of the second heat conductive particles 64 with the second end of the carbon nanotube array 2 to form the thermal interface material 10.

具體地,於所述第二基體44之表面撒上所述複數個第二導熱粒子64,使該第二基體44之表面佈滿該複數個第二導熱粒子64;加熱該第二基體44之表面至略高於該第二基體44之熔點;此時,該複數個第二導熱粒子64浸入該第二基體44中,部分第二導熱粒子64與奈米碳管陣列2之第二端相接觸;從而形成該熱介面材料10。其中,所述複數個第二導熱粒子64浸入所述第二基體44中之深度 ,可以通過控制撒在該第二基體44之複數個第二導熱粒子64之數量,使該第二導熱粒子64儘量多地包圍奈米碳管陣列2中之至少部分奈米碳管之第二端。所述第二導熱粒子64之材料、形狀及直徑與所述第一導熱粒子62之材料、形狀及直徑相同。本實施例中,所述第二導熱粒子64係鋁粉,其直徑為10奈米-1000奈米。 Specifically, the plurality of second heat conductive particles 64 are sprinkled on the surface of the second substrate 44, so that the surface of the second substrate 44 is filled with the plurality of second heat conductive particles 64; and the second substrate 44 is heated. The surface is slightly higher than the melting point of the second substrate 44; at this time, the plurality of second thermally conductive particles 64 are immersed in the second substrate 44, and part of the second thermally conductive particles 64 are adjacent to the second end of the carbon nanotube array 2. Contact; thereby forming the thermal interface material 10. Wherein the depth of the plurality of second heat conductive particles 64 is immersed in the second substrate 44 The second thermally conductive particles 64 may be surrounded by at least a portion of the carbon nanotube array 2 as much as possible by controlling the number of the plurality of second thermally conductive particles 64 scattered on the second substrate 44. end. The material, shape and diameter of the second thermally conductive particles 64 are the same as the material, shape and diameter of the first thermally conductive particles 62. In this embodiment, the second heat conductive particles 64 are aluminum powders having a diameter of 10 nm to 1000 nm.

本發明實施例提供之熱介面材料及其製備方法具有以下優點:其一,由於所述複數個第一導熱粒子及複數個第二導熱粒子之部分導熱粒子與奈米碳管陣列相接觸,使得所述奈米碳管陣列中之奈米碳管通過該複數個第一導熱粒子及複數個第二導熱粒子與熱源相接觸,確保奈米碳管之徑向導熱性能得到充分發揮,以提高熱介面材料之熱導率。其二,所述熱介面材料工作時,所述第一基體及第二基體轉化為熔融態,該熔融態之第一基體及分散於其中之所述複數個第一導熱粒子之部分導熱粒子、該熔融態之第二基體及分散於其中之所述複數個第二導熱粒子之部分導熱粒子能夠與熱源直接接觸,可增加該熱介面材料與熱源之實際熱接觸面積,避免因熱介面材料之平整度下降,而造成接觸熱阻較大,提高了導熱效率。其三,所述熱介面材料之製備方法藉由將複數個第一導熱粒子及複數個第二導熱粒子分別設置於第一基體及第二基體中,使得熱介面材料與熱源形成良好之導熱通道;該方法與採用化學機械拋光或機械研磨之方法使得熱介面材料與熱源形成良好之導熱通道之方法相比,具有操作簡單,成本低之特點。 The thermal interface material and the preparation method thereof provided by the embodiments of the present invention have the following advantages: First, since the plurality of first heat conductive particles and a part of the second heat conductive particles are in contact with the carbon nanotube array, The carbon nanotubes in the carbon nanotube array are in contact with the heat source through the plurality of first heat conductive particles and the plurality of second heat conductive particles, thereby ensuring that the radial heat conduction performance of the carbon nanotubes is fully exerted to improve heat The thermal conductivity of the interface material. Secondly, when the thermal interface material is in operation, the first substrate and the second substrate are converted into a molten state, the first substrate in the molten state and a part of the heat conductive particles of the plurality of first heat conductive particles dispersed therein, The second substrate in the molten state and a part of the thermally conductive particles of the plurality of second thermally conductive particles dispersed therein can be in direct contact with the heat source, and the actual thermal contact area of the thermal interface material and the heat source can be increased to avoid the thermal interface material. The flatness is lowered, and the contact thermal resistance is large, which improves the heat conduction efficiency. Thirdly, the method for preparing the thermal interface material comprises forming a plurality of first heat conductive particles and a plurality of second heat conductive particles in the first substrate and the second substrate respectively, so that the thermal interface material and the heat source form a good heat conduction channel. Compared with the method of using chemical mechanical polishing or mechanical grinding to make the thermal interface material and the heat source form a good heat conduction channel, the method has the characteristics of simple operation and low cost.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精 神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Anyone who is familiar with the skill of this case will be assisted by the essence of the invention. Equivalent modifications or variations made by God are to be covered by the following patents.

2‧‧‧奈米碳管陣列 2‧‧‧Nano Carbon Tube Array

8‧‧‧有機物 8‧‧‧Organic

10‧‧‧熱介面材料 10‧‧‧Hot interface materials

42‧‧‧第一基體 42‧‧‧First substrate

44‧‧‧第二基體 44‧‧‧Second substrate

62‧‧‧第一導熱粒子 62‧‧‧First thermal conductive particles

64‧‧‧第二導熱粒子 64‧‧‧Second thermal particles

Claims (30)

一種熱介面材料,其包括一奈米碳管陣列及設置於所述奈米碳管陣列之一端之一第一基體,其改良在於,所述熱介面材料進一步包括分佈於所述第一基體中之複數個第一導熱粒子,該複數個第一導熱粒子之部分導熱粒子與所述奈米碳管陣列相接觸,該奈米碳管陣列由複數個直線狀的奈米碳管組成。 A thermal interface material comprising an array of carbon nanotubes and a first substrate disposed at one end of the array of carbon nanotubes, wherein the thermal interface material further comprises a distribution in the first substrate The plurality of first thermally conductive particles, the plurality of thermally conductive particles of the plurality of first thermally conductive particles are in contact with the array of carbon nanotubes, the array of carbon nanotubes being composed of a plurality of linear carbon nanotubes. 如請求項1所述之熱介面材料,其中,所述熱介面材料進一步包括一第二基體,該第二基體設置於所述奈米碳管陣列之另一端。 The thermal interface material of claim 1, wherein the thermal interface material further comprises a second substrate disposed at the other end of the array of carbon nanotubes. 如請求項1所述之熱介面材料,其中,所述熱介面材料進一步包括分佈於所述第二基體中之複數個第二導熱粒子,該複數個第二導熱粒子之部分導熱粒子與所述奈米碳管陣列相接觸。 The thermal interface material according to claim 1, wherein the thermal interface material further comprises a plurality of second thermally conductive particles distributed in the second substrate, a portion of the plurality of thermally conductive particles of the second thermally conductive particles and the The carbon nanotube array is in contact. 如請求項1所述之熱介面材料,其中,所述第一導熱粒子為金屬、合金、氧化物及非金屬粒子中之一種或其任意組合。 The thermal interface material according to claim 1, wherein the first thermally conductive particles are one of a metal, an alloy, an oxide, and a non-metallic particle, or any combination thereof. 如請求項1所述之熱介面材料,其中,所述第一導熱粒子與第二導熱粒子分別為金屬、合金、氧化物及非金屬粒子中之一種或其任意組合。 The thermal interface material according to claim 1, wherein the first thermally conductive particles and the second thermally conductive particles are each one of a metal, an alloy, an oxide, and a non-metallic particle, or any combination thereof. 如請求項4或5所述之熱介面材料,其中,所述金屬為錫、銅、銦、鉛、銻、金、銀、鉍及鋁中之一種或其任意組合。 The thermal interface material according to claim 4 or 5, wherein the metal is one of tin, copper, indium, lead, antimony, gold, silver, antimony and aluminum or any combination thereof. 如請求項4或5所述之熱介面材料,其中,所述合金為錫、銅、銦、鉛、銻、金、銀、鉍及鋁任意組合之合金中之一種或 多種。 The thermal interface material according to claim 4 or 5, wherein the alloy is one of an alloy of any combination of tin, copper, indium, lead, antimony, gold, silver, antimony and aluminum or A variety. 如請求項1所述之熱介面材料,其中,所述第一導熱粒子之直徑為10奈米-10000奈米。 The thermal interface material according to claim 1, wherein the first thermally conductive particles have a diameter of from 10 nm to 10,000 nm. 如請求項1所述之熱介面材料,其中,所述第一導熱粒子之形狀為棒狀、片狀、粉末狀及顆粒狀中之一種或其任意組合。 The thermal interface material according to claim 1, wherein the shape of the first thermally conductive particles is one of a rod shape, a sheet shape, a powder form, and a granular form, or any combination thereof. 如請求項3所述之熱介面材料,其中,所述第一導熱粒子與第二導熱粒子之直徑分別為10奈米-10000奈米。 The thermal interface material according to claim 3, wherein the diameters of the first heat conductive particles and the second heat conductive particles are respectively from 10 nm to 10,000 nm. 如請求項3所述之熱介面材料,其中,所述第一導熱粒子與第二導熱粒子之形狀分別為棒狀、片狀、粉末狀及顆粒狀中之一種或其任意組合。 The thermal interface material according to claim 3, wherein the shapes of the first heat conductive particles and the second heat conductive particles are one of a rod shape, a sheet shape, a powder shape and a granular shape, or any combination thereof. 如請求項1所述之熱介面材料,其中,所述奈米碳管陣列之至少部分奈米碳管之一端深入該第一基體中。 The thermal interface material of claim 1, wherein at least a portion of the carbon nanotubes of the array of carbon nanotubes extend into the first substrate. 如請求項2所述之熱介面材料,其中,所述奈米碳管陣列之至少部分奈米碳管之兩端分別深入該第一基體與第二基體中。 The thermal interface material according to claim 2, wherein the two ends of at least a portion of the carbon nanotubes of the carbon nanotube array are respectively penetrated into the first substrate and the second substrate. 如請求項1所述之熱介面材料,其中,所述第一基體之材料為相變材料、樹脂材料及導熱膠中之一種或其任意組合。 The thermal interface material according to claim 1, wherein the material of the first substrate is one of a phase change material, a resin material, and a thermal conductive paste, or any combination thereof. 如請求項2所述之熱介面材料,其中,所述第一基體與第二基體之材料分別為相變材料、樹脂材料及導熱膠中之一種或其任意組合。 The thermal interface material according to claim 2, wherein the materials of the first substrate and the second substrate are one of a phase change material, a resin material and a thermal conductive adhesive, or any combination thereof. 如請求項14或15所述之熱介面材料,其中,所述相變材料為石蠟。 The thermal interface material of claim 14 or 15, wherein the phase change material is paraffin wax. 如請求項14或15所述之熱介面材料,其中,所述樹脂材料為環氧樹脂、丙烯酸樹脂或矽樹脂。 The thermal interface material according to claim 14 or 15, wherein the resin material is an epoxy resin, an acrylic resin or a enamel resin. 如請求項1所述之熱介面材料,其中,所述奈米碳管陣列中之奈米碳管之間之空隙中進一步包括一有機物,該有機物與所述第一基體接觸設置。 The thermal interface material according to claim 1, wherein the interstices between the carbon nanotubes in the array of carbon nanotubes further comprise an organic substance disposed in contact with the first substrate. 如請求項2所述之熱介面材料,其中,所述奈米碳管陣列中之奈米碳管之間之空隙中進一步包括一有機物,該有機物與該第一基體及第二基體接觸設置。 The thermal interface material according to claim 2, wherein the interstices between the carbon nanotubes in the array of carbon nanotubes further comprise an organic substance disposed in contact with the first substrate and the second substrate. 如請求項18或19所述之熱介面材料,其中,所述有機物為矽膠系列、聚乙烯乙二醇、聚酯、環氧樹脂系列、缺氧膠系列、壓克力膠系列或橡膠。 The thermal interface material according to claim 18 or 19, wherein the organic substance is a silicone series, a polyethylene glycol, a polyester, an epoxy resin series, an anoxic glue series, an acrylic glue series or a rubber. 一種熱介面材料之製備方法,其包括下述步驟:提供一奈米碳管陣列;將一第一基體設置於所述奈米碳管陣列之一端;以及添加複數個第一導熱粒子於所述第一基體中,使該複數個第一導熱粒子之部分導熱粒子與所述奈米碳管陣列接觸,在該熱介面材料中,所述奈米碳管陣列由複數個直線狀的奈米碳管組成。 A method of preparing a thermal interface material, comprising the steps of: providing a carbon nanotube array; placing a first substrate at one end of the carbon nanotube array; and adding a plurality of first thermally conductive particles to In the first substrate, a portion of the plurality of thermally conductive particles of the first thermally conductive particles are contacted with the array of carbon nanotubes, wherein the array of carbon nanotubes is composed of a plurality of linear carbon nanotubes Tube composition. 如請求項21所述之熱介面材料之製備方法,其中,所述將一第一基體設置於所述奈米碳管陣列之一端之方法為將該第一基體之材料涂覆於該奈米碳管陣列之一端,形成該第一基體。 The method for preparing a thermal interface material according to claim 21, wherein the method of disposing a first substrate on one end of the carbon nanotube array is to apply the material of the first substrate to the nanometer. One end of the carbon tube array forms the first substrate. 如請求項21所述之熱介面材料之製備方法,其中,所述形成熱介面材料之步驟包括:添加複數個第一導熱粒子於所述第一基體之表面;加熱該第一基體至該第一基體之熔點,使得所述複數個第一導熱粒子浸入該第一基體中,且使其部分導熱粒子與所述奈米碳管陣列之一端接觸。 The method for preparing a thermal interface material according to claim 21, wherein the step of forming a thermal interface material comprises: adding a plurality of first heat conductive particles to a surface of the first substrate; heating the first substrate to the first a melting point of the substrate such that the plurality of first thermally conductive particles are immersed in the first substrate, and a portion of the thermally conductive particles are brought into contact with one end of the array of carbon nanotubes. 如請求項21所述之熱介面材料之製備方法,其中,所述提供一奈米碳管陣列之步驟之後進一步包括將一有機物填充於該奈米碳管陣列之奈米碳管之間之空隙中。 The method for preparing a thermal interface material according to claim 21, wherein the step of providing an array of carbon nanotubes further comprises filling an organic material in a space between the carbon nanotubes of the carbon nanotube array in. 如請求項21所述之熱介面材料之製備方法,其中,所述添加複數個第一導熱粒子於所述第一基體中,使該複數個第一導熱粒子之部分導熱粒子與所述奈米碳管陣列接觸之步驟之後進一步包括將一第二基體設置於奈米碳管陣列之另一端。 The method for preparing a thermal interface material according to claim 21, wherein the plurality of first heat conductive particles are added to the first substrate, and the plurality of heat conductive particles of the plurality of first heat conductive particles are combined with the nano The step of contacting the carbon tube array further includes disposing a second substrate at the other end of the array of carbon nanotubes. 如請求項25所述之熱介面材料之製備方法,其中,添加複數個第二導熱粒子於所述第二基體之表面;加熱該第二基體至其熔點,使得所述複數個第二導熱粒子浸入該第二基體中,且使其部分導熱粒子與所述奈米碳管陣列之另一端接觸。 The method of preparing the thermal interface material according to claim 25, wherein a plurality of second heat conductive particles are added to the surface of the second substrate; and the second substrate is heated to a melting point thereof, so that the plurality of second heat conductive particles The second substrate is immersed and a portion of the thermally conductive particles are brought into contact with the other end of the array of carbon nanotubes. 如請求項21所述之熱介面材料之製備方法,其中,所述第一導熱粒子為金屬、合金、氧化物及非金屬粒子中之一種或其任意組合。 The method of preparing a thermal interface material according to claim 21, wherein the first thermally conductive particles are one of a metal, an alloy, an oxide, and a non-metallic particle, or any combination thereof. 如請求項21所述之熱介面材料之製備方法,其中,所述第一導熱粒子之直徑為10奈米-10000奈米。 The method for preparing a thermal interface material according to claim 21, wherein the first thermally conductive particles have a diameter of from 10 nm to 10,000 nm. 如請求項26所述之熱介面材料之製備方法,其中,所述第一導熱粒子與第二導熱粒子分別為金屬、合金、氧化物及非金屬粒子中之一種或其任意組合。 The method for preparing a thermal interface material according to claim 26, wherein the first thermally conductive particles and the second thermally conductive particles are each one of a metal, an alloy, an oxide, and a non-metallic particle, or any combination thereof. 如請求項26所述之熱介面材料之製備方法,其中,所述第一導熱粒子與第二導熱粒子之直徑分別為10奈米-10000奈米。 The method for preparing a thermal interface material according to claim 26, wherein the diameters of the first heat conductive particles and the second heat conductive particles are respectively from 10 nm to 10,000 nm.
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Citations (3)

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Publication number Priority date Publication date Assignee Title
US20050151114A1 (en) * 2003-04-17 2005-07-14 Vanderbilt University Compositions with nano-particle size conductive material powder and methods of using same for transferring heat between a heat source and a heat sink
US20050214523A1 (en) * 2002-02-08 2005-09-29 Saikumar Jayaraman Phase change material containing fusible particles as thermally conductive filler
US20060234056A1 (en) * 2005-04-14 2006-10-19 Tsinghua University Thermal interface material and method for making the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214523A1 (en) * 2002-02-08 2005-09-29 Saikumar Jayaraman Phase change material containing fusible particles as thermally conductive filler
US20050151114A1 (en) * 2003-04-17 2005-07-14 Vanderbilt University Compositions with nano-particle size conductive material powder and methods of using same for transferring heat between a heat source and a heat sink
US20060234056A1 (en) * 2005-04-14 2006-10-19 Tsinghua University Thermal interface material and method for making the same

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