TWI403221B - Plasma generation apparatus and plasma treatment apparatus - Google Patents

Description

Plasma generating device and plasma processing device

The present invention relates to a plasma generating apparatus, and more particularly to an inductively coupled plasma generating apparatus.

As the area of the semiconductor substrate, the flat display substrate, the solar cell substrate, and the like increases, the manufacturing apparatus for processing these substrates also becomes large. Plasma processing devices are used in various processes such as etching, deposition, ion implantation, and surface treatment of materials. As the area of the plasma processing apparatus becomes larger, process uniformity and process speed become the biggest problems. Process uniformity can depend on the density of the plasma.

It is an object of the present invention to provide a plasma generating apparatus which can form a uniform plasma.

A plasma generating apparatus according to an embodiment of the present invention includes: an insulating plate (Smn) arranged in a matrix form along a first direction and a second direction across the first direction; a metal upper plate including an insulating plate disposed thereon A through hole (Hmn) having a quadrangular shape; and an antenna structure (Tmn) provided on each of the insulating plates. The antenna structure includes: a first type antenna structure disposed close to an edge of the metal upper plate; and a second type antenna structure disposed close to an edge of the metal upper plate; wherein the first type antenna structure is The second type of antenna structure consumes more power so that a uniform plasma can be formed.

In an embodiment of the invention, the antenna structure further includes a third antenna structure surrounded by the second antenna structure and the first antenna structure.

In an embodiment of the invention, the second antenna structure consumes more power than the third antenna structure.

In an embodiment of the invention, the number (m) of the insulating plates arranged in the first direction is 3 or more, and the number (n) of the insulating plates arranged in the second direction is 3 or more.

In an embodiment of the invention, the first antenna structures are electrically connected in series, and the second antenna structures are electrically connected in parallel with each other.

In an embodiment of the invention, the third antenna structures are electrically connected in parallel with each other.

In an embodiment of the invention, the antenna structure is formed on a printed circuit board or formed by bending a wire.

In an embodiment of the invention, the printed circuit board is a double-sided substrate, and the antenna structure includes at least one of gold, silver, copper, nickel, and tin.

In an embodiment of the invention, the antenna structure has the same shape.

In an embodiment of the invention, the method further includes at least one of a first reactance element electrically connected in series with the first type antenna structure and a second reactance element electrically connected in series with the second type antenna structure.

In an embodiment of the invention, the method further includes: a first reactance component electrically connected in series with the first antenna structure; a second reactance component electrically connected in series with the second antenna structure; and the third antenna structure At least one of the third reactance elements electrically connected in series.

In an embodiment of the invention, the first reactance element, the second reactance element, and the third reactance element include a variable reactance element.

In an embodiment of the present invention, the first current flowing through each antenna structure of the first antenna structure is greater than the second current flowing through each antenna structure of the second antenna structure, and flows through the second The second current of each antenna structure of the antenna structure is greater than the third current flowing through each antenna structure of the third antenna structure.

According to an embodiment of the present invention, the power supply unit that supplies power to the antenna structure (Tmn) is electrically connected to the first antenna structure, the second antenna structure, and the third Antenna structure.

In one embodiment of the present invention, the method further includes a plurality of power supply units that supply power to the antenna structure (Tmn), wherein the first power supply unit supplies power to the first antenna structure, and the second power supply unit to the second type The antenna structure supplies power, and the third power supply unit supplies power to the third type antenna structure.

In an embodiment of the invention, at least one of the first driving frequency of the first power supply unit, the second driving frequency of the second power supply unit, and the third driving frequency of the third power supply unit are different from each other.

In an embodiment of the invention, at least one of the first antenna structure, the second antenna structure, and the third antenna structure has a different structure.

In an embodiment of the invention, at least one of the first antenna structure and the second antenna structure has a different structure.

In an embodiment of the invention, the antenna structures (Tmn) each have a quadrangular shape and a two-layer structure.

In an embodiment of the invention, the antenna structures (Tmn) are each composed of a plurality of auxiliary antennas, and are arranged to form a closed loop on the same plane. According to an embodiment of the present invention, a plasma processing apparatus includes: a vacuum container for plasma processing a substrate; a substrate holder disposed inside the vacuum container; and a metal upper plate disposed on the upper surface of the vacuum container and including a plurality of through holes And the antenna structure (Tmn) is disposed on the metal upper plate and arranged in a matrix form along the first direction and the second direction across the first direction to form a quadrangle. The antenna structure (Tmn) includes: a first antenna structure disposed on the quadrangular edge; a second antenna structure disposed adjacent to a quadrangular edge; and a third antenna structure from the second The antenna structure and the first antenna structure are surrounded; wherein the power consumption of each of the first antenna structures is greater than the power consumption of the second antenna structure, and the power consumption of the second antenna structure is greater than Each of the third antenna structures described above consumes electric power.

In an embodiment of the invention, the number (m) of the insulating plates arranged in the first direction is 3 or more, and the number (n) of the insulating plates arranged in the second direction is 3 or more.

In an embodiment of the invention, the first antenna structures are electrically connected in parallel, the second antenna structures are electrically connected in parallel, and the third antenna structures are electrically connected in parallel.

In an embodiment of the invention, the method further includes: a first reactance component electrically connected in series with the first antenna structure; a second reactance component electrically connected in series with the second antenna structure; and the third antenna structure At least one of the third reactance elements electrically connected in series.

In an embodiment of the present invention, the first current flowing through each antenna structure of the first antenna structure is greater than the second current flowing through each antenna structure of the second antenna structure, and flows through the second The second current of each antenna structure of the antenna structure is greater than the third current flowing through each antenna structure of the third antenna structure.

According to an embodiment of the present invention, the power supply unit that supplies power to the antenna structure (Tmn) is electrically connected to the first antenna structure, the second antenna structure, and the third Antenna structure. In one embodiment of the present invention, the method further includes a plurality of power supply units that supply power to the antenna structure (Tmn), wherein the first power supply unit supplies power to the first antenna structure, and the second power supply unit to the second type The antenna structure supplies power, and the third power supply unit supplies power to the third type antenna structure.

In an embodiment of the invention, at least one of the first driving frequency of the first power supply unit, the second driving frequency of the second power supply unit, and the third driving frequency of the third power supply unit are different from each other.

In an embodiment of the invention, at least one of the first antenna structure, the second antenna structure, and the third antenna structure has a different structure.

According to the plasma generating apparatus of one embodiment of the present invention, the antenna structures are classified according to geometric positions, so that electric power can be supplied at different positions. Therefore, the above plasma generating apparatus can form a uniform large-area plasma.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the invention is not limited to the embodiments described herein, but may have other implementations. The embodiments provided herein are intended to assist the understanding of the invention and to fully convey the inventive concept. In the drawings, the thickness of layers (or films) and regions are exaggerated for convenience of description. In addition, it is meant that the layer (or film) is located on the other layer (or film) or the substrate "on", meaning that it is formed directly on the other layer (or film) or substrate, or a third layer is disposed between them (or Membrane. Throughout the specification, the parts denoted by the same symbols mean the same structure.

1 is a schematic view of a plasma generating apparatus according to an embodiment of the present invention. As shown in FIG. 1, the plasma generating device includes: an insulating plate (Smn) 130 arranged in a matrix along a first direction and a second direction across the first direction; and a metal upper plate 110 including the insulating plate 130 and a through hole (Hmn) having a quadrangular shape; an antenna structure (Tmn) 140 is provided on each of the insulating plates 130. The antenna structure (Tmn) 140 forms a plasma on a lower portion of the metal upper plate 110. The above m and n may be positive integers. The above m may be the number of holes in the first direction. The above n may be the number of holes in the second direction.

The vacuum vessel 100 can be a quadrangular chamber. The vacuum container 100 may include an exhaust unit (not shown), a gas supply unit (not shown), a substrate (not shown), and a substrate holder (not shown). The vacuum container 100 described above can perform a plasma processing process. The above plasma treatment process, at least one of octagonal etching, deposition, ion implantation, and surface treatment. The substrate and the substrate holder may have a square shape. The substrate may be an organic light emitting element substrate, a solar cell substrate, a liquid crystal display substrate, or a semiconductor substrate.

The above metal upper plate 110 may be a flat plate. The metal upper plate 110 may be a cover of the vacuum container 100 described above. The above metal upper plate 110 may have a quadrangular shape. The above metal upper plate 110 may include at least one of aluminum, iron, and nickel. The surface of the above metal upper plate 110 may be coated with a surface insulating film. The above surface insulating film may include an aluminum oxide film. The above metal upper plate 110 may include a plurality of through holes (Hmn). The plurality of through holes (Hmn) may have a square shape. The through holes (Hmn) may be arranged in a matrix form along the first direction and the second direction. The number (m) of the holes in the first direction described above is three. The number (n) of the holes in the second direction is three. The through hole may have a hole protrusion (122). The hole protrusion (122) may include a sealing portion (not shown) in sealing with the insulating plate. The above sealing portion may include an O-ring groove.

The insulating plate (Smn) 130 may be inserted into the through hole (Hmn). The insulating plate (130) may be disposed on the hole protrusion (122). The above metal upper plate (130) may include at least one of quartz, aluminum oxide, and ceramic. For the convenience of explanation, only S31 in the above-described insulating plate (Smn) 130 is shown. The different positions of the above insulating sheets (Smn) 130 may have a uniform thickness. According to a variant embodiment of the invention, the insulating plate (Smn) 130 described above may have different thicknesses depending on different locations.

As the area of the plasma generating apparatus becomes larger, processing or fabrication of the insulating sheet (130) may become difficult. Therefore, preferably, the insulating plate (130) is preferably processed or fabricated in an appropriate size. In the large-area plasma generating apparatus including the vacuum container 100, when a dielectric upper plate (not shown) is formed on the upper plate of the vacuum container 100, the dielectric upper plate may be pressed against the dielectric upper plate. The thermal shock generated by the antenna is relatively weak. Therefore, in order to overcome the above-mentioned pressure and thermal shock of the dielectric upper plate, it is necessary to increase the thickness of the dielectric upper plate. However, if the thickness of the upper dielectric plate is increased, the efficiency of inductively coupled plasma generation may be reduced. Therefore, preferably, the dielectric upper plate is separated by a suitable thickness and size.

The antenna structure (Tmn) 140 may be arranged in a matrix form in the first direction and the second direction in the insulating plate (Smn) 130. The antenna structure (Tmn) 140 may generate an inductively coupled plasma on a lower portion of the insulating plate (Smn) 130. For convenience of explanation, only T31 is shown in the above antenna structure (Tmn) 140. The antenna structure (140) described above may have the same physical properties or structure. The antenna structure (Tmn) 140 described above may be formed on a printed circuit board. The above printed circuit board may have a two-layer structure. The antenna structure formed on the above printed circuit board can maintain the same structure. The antenna structure described above can be improved in productivity because it is easy to manufacture and design. The above printed circuit board can have heat resistance.

According to a variant embodiment of the invention, the antenna structure (Tmn) 140 described above can be formed by a bendable wire or conduit.

2 is a schematic view of a plasma generating apparatus according to an embodiment of the present invention. Figure 2 is a plan view of Figure 1.

As shown in FIG. 2 and FIG. 1 , the plasma generating device includes: an insulating plate (Smn) arranged in a matrix along a first direction and a second direction spanning the first direction; and a metal upper plate 110 including the above The insulating plate 130 has a rectangular through hole (Hmn), and an antenna structure (Tmn) is provided on each of the insulating plates (Smn). The antenna structure (Tmn) can form a plasma in the upper plate lower portion 110. The above antenna structure (Tmn) can form a 3*3 matrix. According to a variant embodiment of the invention, m and/or n may be 3 or more.

The antenna structure (Tmn) includes: a first antenna structure A disposed close to an edge of the metal upper plate 110; and a second antenna structure B disposed close to an edge of the metal upper plate 110; The three-antenna structure C is surrounded by the second antenna structure B and the first antenna structure A. The first antenna structure A described above may include T31, T33, T13, and T11. The second type antenna structure B described above may include T32, T23, T12, and T21. The third antenna structure C described above may include T22. Each of the antenna structures of the first antenna structure A can consume more power than each of the antenna structures of the second antenna structure B. Each of the antenna structures of the second antenna structure B described above can consume more power than the third antenna structure C described above.

Each of the antenna structures of the first antenna structure A, the antenna structures of the second antenna structure B, and the antenna structures of the third antenna structure may have the same configuration. The plasma formed by the wall of the vacuum container has a plasma formed by the first antenna structure A more than that of the second antenna structure B. Therefore, in order to make the plasma density of the lower portion of the metal upper plate 110 uniform, the power consumption of the first antenna structure A can be larger than the power consumption of the second antenna structure B. The plasma formed by the wall of the vacuum container has a plasma formed by the second antenna structure B more than that of the third antenna structure C. The power consumption of the second antenna structure B may be larger than the power consumption of the third antenna structure C. Therefore, uniform plasma can be formed by supplying spatially uneven power to the above-described antenna structure (Tmn).

Figure 3 is a cross-sectional view showing a plasma generating apparatus in accordance with an embodiment of the present invention. Figure 3 is a cross-sectional view taken along line II' of Figure 1.

As shown in FIGS. 1 to 3, the first type plasma PA formed by the first antenna structures T31, T33, T13, and T11; A is more lost on both sides of the vacuum container 100 than in other directions. The second type plasma PB formed by the second antenna structures T32, T23, T12, and T21; B is more lost in the direction of one side of the vacuum container than in the other direction. The third type plasma PC formed by the third antenna structure T22; C described above can be uniformly lost to the periphery. The first type plasma PA described above may include P31, P33, P13, and P11. The above P31, P33, P13, and P11 may be disposed at the lower portions of T31, T33, T13, and T11, respectively, and may be formed by the above-described T31, T33, T13, and T11. The second type plasma PB described above may include P32, P23, P12, and P21. The above P32, P23, P12, and P21 may be disposed at the lower portions of T32, T23, T12, and T21. The above P32, P23, P12 and P21 may each be formed by the above T32, T23, T12 and T21. The third type plasma PC described above may include P22. The above P22 can be formed by T22. The plasma can be eliminated by recombining the wall of the vacuum vessel 100 described above. The closer to the wall of the vacuum vessel 100 described above, the greater the diffusion loss due to the difference in plasma density. The antenna structures of the first antenna structure A, the second antenna structure B, and the third antenna structure C described above may have the same physical properties. When the power consumption of each of the antenna structures of the first antenna structure A is the same as the power consumption of the antenna structure of the second antenna structure B, the average plasma density of the first type plasma PA may be smaller than the second The average plasma density of the plasma PB. Further, when the power consumption of each of the antenna structures of the second antenna structure B is the same as the power consumption of the antenna of the third antenna structure C, the average plasma density of the second type plasma PB may be smaller than the above. The average plasma density of the Type III plasma PA. This spatial heterogeneity of the plasma density can have a negative impact on plasma processing. Therefore, in order to eliminate the spatial unevenness of the plasma density, it is necessary to maintain the uniformity of the plasma density of the first to third types of plasmas PA, PB, and PC. The power consumption of the antenna structure of the first antenna structure A, the power consumption of the antenna structure of the second antenna structure B, and the power consumption of the antenna structure of the third antenna structure C are necessary. Not the same.

4 to 5 are schematic views of an antenna structure according to an embodiment of the present invention.

As shown in FIG. 4, the plasma generating device includes: an insulating plate (Smn) arranged in a matrix along a first direction and a second direction across the first direction; and a metal upper plate 110 including the insulating plate 130. Further, a through hole (Hmn) having a quadrangular shape; an antenna structure (Tmn) is provided on the antenna structure (Tmn) on each of the insulating plates, and a plasma is formed on a lower portion of the metal upper plate 110. The above antenna structure (Tmn) can form a 4*4 matrix.

The antenna structure (Tmn) can be separated into a first antenna structure A, which is disposed close to both sides of the metal upper plate 110; and the second antenna structure B is disposed close to a side of the metal upper plate; The third antenna structure C is disposed between the second antenna structures. The above metal upper plate (110) may have a quadrangular shape. The first antenna structure A described above can be disposed close to the edge of the metal upper plate 110. The second antenna structure B described above can be disposed close to the side of the metal upper plate 110. The third antenna structure C described above may be disposed at the center of the metal upper plate 110. The first type antenna structure A described above may include T11, T41, T44, and T14. The second antenna structure B described above may include T21, T31, T42, T43, T34, T24, T13, and T12. The third antenna structure C described above may include T22, T32, T33, and T23.

As shown in FIG. 5, the plasma generating device includes: an insulating plate (Smn) arranged in a matrix along a first direction and a second direction across the first direction; and a metal upper plate including the insulating plate 130 A through hole (Hmn) having a quadrangular shape; an antenna structure (Tmn) provided on each of the insulating plates, wherein the antenna structure (Tmn) forms a plasma on a lower portion of the upper plate. The above antenna structure can form a 2*3 matrix.

The antenna structure (Tmn) can be separated into a first antenna structure A, which is disposed close to both side faces of the metal upper plate 110. The second antenna structure B is disposed close to a side surface of the metal upper plate. The above metal upper plate 110 may have a quadrangular shape. The first antenna structure A described above can be disposed close to the edge of the metal upper plate 110. The second antenna structure B described above can be disposed close to the side of the metal upper plate 110. The first type antenna structure A described above may include T11, T31, T32, and T12. The second antenna structure B described above may include T21 and T12.

Fig. 6 is a circuit diagram of a plasma generating apparatus according to an embodiment of the present invention.

Fig. 7 is a schematic view showing the characteristics of different regions of a plasma generating apparatus according to an embodiment of the present invention.

As shown in FIGS. 6, 7, and 2, the power supply unit 170 can be electrically connected to the antenna structure (Tmn). A matching circuit portion 160 for matching impedance may be provided between the power supply unit 170 and the antenna structure (Tmn). The power supply unit 170 may be an AC or RF power supply. The output impedance of the power supply unit 170 described above may be 50 ohms (Ohm). The power supply unit 170 described above can operate in a continuous mode or a field mode. The matching circuit unit 160 may be a means for maximally transmitting power to the power supply unit 170 to a load including the antenna structure (Tmn).

The power supply unit 170 can supply electric power to the antenna structure (Tmn). The antenna structure (Tmn) may include a first antenna structure 240a, a second antenna structure 240b, and a third antenna structure 240c. The power supply unit 170 may be connected in parallel to the first antenna structure 240a, the second antenna structure 240b, and the third antenna structure 240c. The first antenna structure 240a described above may be disposed in the A region. The second antenna structure 240b described above may be disposed in the B region. The third antenna structure 240c described above may be disposed in the C region. The first type antenna structure 240a described above may be electrically connected in series with the first reactance element 150a. The second antenna structure 240b described above may be electrically connected in series with the second reactance element 150b. The third antenna structure 240c described above may be electrically connected in series with the third reactance element 150c. According to the above-described first to third type antenna structures, the first to third reactance elements 150a, 150b, 150c may be means for distributing different electric power. The above reactive elements 150a, 150b, 150c may include variable reactance elements. The variable reactance element described above may be a variable capacitor or a variable inductor.

According to a variant embodiment of the invention, different power can be supplied to the first to third antenna structures using only the second and third variable elements 150b, 150c.

The first antenna structure 240a may include four antenna structures T31, T33, T13, and T11. The antenna structures T31, T33, T13, and T11 of the first antenna structure 240a described above may be electrically connected in parallel with each other. Z (T31), Z (T33), Z (T13), and Z (T11) may be equivalent impedances each including T31, T33, T13, and T11.

The second antenna structure 240b may include four antenna structures T32, T23, T12, and T21. The antenna structures T32, T23, T12, and T21 of the second antenna structure 240b described above may be electrically connected in parallel with each other. Z(T32), Z(T23), Z(T12), and Z(T21) may be equivalent impedances including T32, T23, T12, and T21.

The third antenna structure 240c described above may include one antenna structure T22. Z (T22) may be an equivalent impedance including the above-described third type antenna structures C, 240c. The total impedance of the first type antenna structure 240a may be equal to the total impedance of the second type antenna structure 240b. In order to supply more power to the antenna structure of the first type antenna structure 240a, the impedance of the first reactance element 150a may be smaller than the impedance of the second reactance element 150b. In addition, the total impedance of the second antenna structure 240b may be smaller than the total impedance of the third antenna structure 240c. In order to supply more power to the second type antenna structure 240b, the impedance of the second reactance element 150b may be smaller than the impedance of the third reactance element 150c. Therefore, the uniformity of the plasma density can be ensured.

The power PA consumed by each antenna structure of the first antenna structure 240a may be larger than the power PB consumed by each antenna structure of the second antenna structure 240b. The electric power PB consumed by each of the antenna structures of the second antenna structure 240b may be larger than the electric power PC consumed by each of the antenna structures of the third antenna structure 240c. Therefore, the uniformity of the plasma density NpA in the lower portion of the first antenna structure A, the plasma density NpB in the lower portion of the second antenna structure B, and the plasma density NpC in the lower portion of the third antenna structure C can be ensured.

The first current IA flowing through each of the antenna structures of the first antenna structure A may be greater than the second current IB flowing through each of the antenna structures of the second antenna structure B. The second current IB flowing through each of the antenna structures of the second antenna structure B may be larger than the third current IC flowing through each of the antenna structures of the third antenna structure C. Therefore, the uniformity of the plasma density NpA in the lower portion of the first antenna structure A, the plasma density NpB in the lower portion of the second antenna structure B, and the plasma density NpC in the lower portion of the third antenna structure C can be ensured.

Figure 8 is a circuit diagram of a plasma generating apparatus according to another embodiment of the present invention.

As shown in FIGS. 2 and 8, the power supply unit 170 can be electrically connected to the antenna structure (Tmn). The plurality of power supply units 170 may be plural. The power supply unit 170 may include a first power supply unit 170a, a second power supply unit 170b, and a third power supply unit 170c. The driving frequencies of the first power supply unit 170a, the second power supply unit 170b, and the third power supply unit 170c may be the same.

The power supply unit 170 can supply electric power to the antenna structure (Tmn). The antenna structure (Tmn) can be separated into the first antenna structure A, the second antenna structure B, and the third antenna structure C.

A first matching circuit portion 160a for matching impedance may be provided between the first power supply portion 170a and the first antenna structure 240a. A second matching circuit portion 160b for matching impedance may be provided between the second power supply unit 170b and the second antenna structure 240b. A third matching circuit portion 160c for matching impedance may be provided between the third power supply unit 170c and the third antenna structure 240c. The power supply units 170a, 170b, and 170c may be AC or RF power sources. The output impedance of the power supply units 170a, 170b, and 170c may be 50 ohms (Ohm).

The first power supply unit 170a may be electrically connected to the first type antenna structure 240a. The first antenna structure 240a may include four antenna structures T31, T33, T13, and T11. Z (T31), Z (T33), Z (T13), and Z (T11) may be equivalent impedances each including T31, T33, T13, and T11. T31, T33, T13 and T11 can be connected in parallel.

The second power supply unit 170b is electrically connectable to the second antenna structure 240b. The second antenna structure 240b may include four antenna structures T32, T23, T12, and T21. Z(T32), Z(T23), Z(T12), and Z(T21) may be equivalent impedances including T32, T23, T12, and T21. T32, T23, T12 and T21 can be connected in parallel.

The third power supply unit 170c is electrically connectable to the third type antenna structure 240c. The third type antenna structure C described above may include one antenna structure T22. Z(T22) is an equivalent impedance including T33.

The power consumed by each of the antenna structures of the first antenna structure 240a may be larger than the power consumed by each of the antenna structures of the second antenna structure 240b. The power consumed by each of the antenna structures of the second antenna structure 240b may be larger than the power consumed by each of the antenna structures of the third antenna structure 240c.

The first current IA flowing through each of the antenna structures of the first antenna structure 240a may be greater than the second current IB flowing through each of the antenna structures of the second antenna structure 240b. The second current IB flowing through each of the antenna structures of the second antenna structure 240b may be larger than the third current IC flowing through each of the antenna structures of the third antenna structure 240c.

According to a modified embodiment of the present invention, the driving frequencies of the first power supply unit 170a, the second power supply unit 170b, and the third power supply unit 170c may be different. Figure 9 is a schematic view of a plasma generating apparatus according to another embodiment of the present invention. Figure 9 is a cross-sectional view taken along line II-II' of Figure 1.

As shown in FIG. 1, FIG. 3 and FIG. 9, the plasma generating apparatus includes: an insulating plate (Smn) 130 arranged in a matrix in a first direction and a second direction across the first direction; a metal upper plate (Hmn 120 includes a through hole (Hmn) 120 having an insulating plate 130 and having a quadrangular shape; an antenna structure (Tmn) 140 is provided on each of the insulating plates (Smn) 130. The antenna structure (Tmn) 140 has a plasma formed on a lower portion of the lower portion of the insulator plate.

The vacuum vessel 100 can be a quadrangular chamber. The vacuum container 100 may include an exhaust unit (not shown), a gas supply unit (not shown), a substrate 202, and a substrate holder 204. The above vacuum vessel 10) can perform a plasma treatment process. The above plasma treatment process may include at least one of etching, deposition, ion implantation, and surface treatment. The substrate 202 and the substrate holder 204 may have a square shape. The substrate 202 may be an organic light emitting element substrate, a solar cell substrate, a liquid crystal display substrate, or a semiconductor substrate. The substrate holder may include at least one of a temperature adjustment unit (not shown), an electrostatic chuck, and a power application unit. The temperature adjustment unit can adjust the temperature of the substrate. The electrostatic chuck may be a means for attaching and detaching the substrate. The power application unit may be a means for applying an RF bias voltage to the substrate.

The antenna structure (Tmn) 140 can be separated into the first antenna structure A, the second antenna structure B, and the third antenna structure C. T21 can form a plasma P21 in the lower portion of the insulating plate S21. T23 can form a plasma P23 in the lower portion of the insulating plate S23. T22 may form a plasma P22 under the insulating plate S22.

The first antenna structures A are connected in parallel to each other and in series to a first reactance element (not shown). The second antenna structures B described above are connected in parallel to each other and in series to the second reactance element reactance element 150b. The third antenna structure C described above may be connected in series to the third reactance element 150c. The first to third reactance elements described above may be electrically connected to the matching circuit portion 160. The matching circuit unit 160 can be electrically connected to the power supply unit 170.

10 to 12 are schematic views of an antenna structure according to an embodiment of the present invention.

As shown in FIG. 10, the antenna structure 540 may include first to fourth auxiliary antennas 540a, 540b, 540c, 540d. The antenna structure 540 described above may have a quadrangular shape. The antenna structure 540 described above may include a two-layer structure of an upper layer and a lower layer. The antenna structure 540 described above may be formed on the printed circuit board 559. The above antenna structure may have a thickness of several millimeters to several centimeters. The antenna structure 540 described above may have a quadrangular shape in plan view. The length of the above-mentioned antenna structure in the first direction is several tens of centimeters to several meters. The length of the antenna structure in the second direction across the first direction is tens of centimeters to several meters. The auxiliary antennas described above may be connected in parallel by a connecting line (not shown) to form an antenna structure. The power terminals P1, P2, P3, and P4 can be connected to the power supply unit through the above connecting wires. In addition, the ground terminals G1, G2, G3, and G4 can be grounded through the above connecting wires. The above connecting wires may be formed on a printed circuit board. The current flowing through each of the first to fourth auxiliary antennas 540a, 540b, 540c, 540d described above may actually form a closed loop above and/or below.

The first auxiliary antenna 540a may include a first power portion 541, a first extension portion 543, a plane moving portion 547, a second extension portion 545, and a first ground portion 549. The first power portion 541, the first extension portion 543, the plane moving portion 547, the second extension portion (546), and the first ground portion 549 may be continuously and electrically connected to each other.

The first power unit 541 may include an inner line 541a and an outer line 541b that are disposed in parallel to the upper layer. Both ends of the inner wire 541a are bent at right angles to be connected to the outer wire 541b. One end P1 of the first power unit 541 is supplied with electric power, and the other end of the first electric power unit 541 may be an extended portion of the outer line 541b.

The first extension portion 543 may include 543a and an outer line 543b that are disposed in parallel on the upper layer. Both ends of the inner wire 543a are bent at right angles to be connected to the outer wire 543b. One end of the outer line 543b described above may be formed to be elongated. The other end of the outer wire 541b of the first power portion 541 and one end of the outer wire 543b of the first extension portion 543 may be in cross-angle contact with each other at right angles. The contact portion between the first extension portion 543 and the first power portion 541 may be provided on the edge of the quadrangle.

The second extension portion 545 may have the same form as the first extension portion described above.

The first ground portion 549 may have the same form as the power portion described above. The second extension portion 545 and the first ground portion 549 may be disposed at other edges that are rotated by 90 degrees in the clockwise direction. The first power portion 541 and the first extension portion 543 may be disposed on the upper layer, and the second extension portion 545 and the first ground portion 549 may be disposed on the lower layer.

The other end of the inner wire 543a and the other end of the outer wire 543b of the first extension portion 543 may be connected to the other end of the inner wire 545a of the second extension portion 545 and the other end of the outer wire 545b. The planar moving portion can be formed by filling a through hole penetrating through the printed circuit board with a conductive material.

The second to fourth auxiliary antennas 540b, 540c, 540c, and 540d may be rotationally symmetrically arranged in the clockwise direction like the first auxiliary antenna.

As shown in FIG. 11, the antenna structure 1140 may include first and second auxiliary antennas 1140a, 1140b. The antenna structure 1140 described above can be formed on the printed circuit board 1149. The power terminals P1 and P2 can be connected to the power supply unit. In addition, the ground terminals G1, G2 can be grounded. The antenna structure 1140 described above may be composed of two layers, upper and lower. The antenna structure 1140 described above may have a quadrangular shape. The first auxiliary antenna 1140a may include a first power portion 1141, a first extension portion 1142, a second extension portion 1143, a plane moving portion 1144, a third extension portion 1145, a fourth extension portion 1146, and a first ground portion 1147.

The first power unit 1141, the first extension portion 1142, the second extension portion 1143, the plane movement portion 1144, the third extension portion 1145, the fourth extension portion 1146, and the first ground portion 1147 may be continuously electrically connected to each other. The first power unit 1141 described above may be disposed on the first side of the upper surface. The first extension 1142 described above may be disposed on the second side of the upper surface. The second extension portion 1143 may be disposed on the third side of the upper surface. The third extension portion 1145 may be disposed on the third side below. The fourth extension portion 1146 may be disposed on the fourth side below. The first grounding portion 1147 may be disposed on the first side below. The first power portion 1141, the second extension portion 1143, the third extension portion 1145, and the first ground portion 1147 may have the same length. The lengths of the first extension portion 1142 and the fourth extension portion 1146 may be the same. The length of the first extension portion 1142 may be twice the length of the first power portion. The first power unit 1141 may have the same shape as the first ground portion 1147 described above. The second extension portion 1143 and the third extension portion 1145 described above may have the same shape. The first extension portion 1142 and the fourth extension portion 1146 may have the same shape.

The first power unit 1141 may include an inner line 1141a and an outer line 1141b disposed in parallel on the upper layer, and both ends of the inner line 1141a are bent at a right angle to be connected to the outer line 1141b. One end P1 of the first power unit 1141 may provide power, and the other end of the first power unit 1141 may be an extension of the outer line 1141.

The first extension portion 1142 may include a 1142a and an outer line 1142b that are disposed in parallel on the upper layer. Both ends of the above inner wire may be bent to be connected to the outer wire. The inner wire 1142a may be bent at a right angle to be connected to the outer wire 1142b. Both ends of the outer line 1142b of the first extension portion 1142 can be formed to be elongated. The other end of the outer wire 1141b of the first power portion 1141 and one end of the outer wire 1142b of the first extension portion 1142 may be in perpendicular contact with each other.

The second extension portion 1143 may include a 1143a and an outer line 1143b that are disposed in parallel on the upper layer. One end of the inner wire 1143a is bendable to be connected to the outer wire 1143b. Both ends of the outer line 1143b of the second extension portion 1143 may be formed to be elongated. The other end of the outer line 1142b of the first extension portion 1142 and one end of the outer line 1143b of the second extension portion 1143 may be in perpendicular contact with each other.

The third extension portion 1145 may have the same form as the second extension portion 1143 described above.

The plane moving portion 1144 is connected to the second extension portion 1143 and the third extension portion 1145, and is formed to extend from the upper layer to the lower layer.

The fourth extension portion may have the same form as the first extension portion described above. The third extension portion 1145 can be connected to the fourth extension portion 1146 at a right angle.

The first ground portion 1147 may have the same form as the first power portion 1141 described above. The fourth extension portion 1146 may be connected to the first ground portion 1141 at a right angle.

The second auxiliary antenna 1140b may be symmetrically arranged in a clockwise direction by 180 degrees like the first auxiliary antenna 1140a.

As shown in FIG. 12, the antenna structure 2140 may include first and second auxiliary antennas 2140a, 2140b. The antenna structure 2140 described above may be formed on the printed circuit board 2249. The power terminals P1 and P2 can be connected to the power supply unit. In addition, the ground terminals G1, G2 can be grounded. The antenna structure 2140 described above may have a two-layer structure.

The first auxiliary antenna 2140a may include a first power unit 2141, a first extension portion 2142, a second extension portion 2143, a plane moving portion 2144, a third extension portion 2145, a fourth extension portion 2146, and a first ground portion 2147. The first power unit 2141, the first extension portion 2142, the second extension portion 2143, the plane moving portion 2144, the third extension portion 2145, the fourth extension portion 2146, and the first ground portion 2147 may be continuously electrically connected to each other.

The first power unit 2141 may be disposed on the first side of the upper layer. The first extension 2142 may be disposed on the second side of the upper surface. The second extension 2143 may be disposed on the third side of the upper surface. The third extension 2145 may be disposed on the third side below. The fourth extension 2146 may be disposed on the fourth side below. The first grounding portion 2147 may be disposed on the first side below. The lengths of the power unit 2141, the second extension 2143, the third extension 2145, and the first ground portion 2147 may be the same. The lengths of the first extension portion 2142 and the fourth extension portion 2146 may be the same.

The first power unit 2141, the second extension 2143, the third extension 2145, and the first ground portion 2147 may have the same shape. The first extension portion 2142 and the fourth extension portion 2146 may have the same shape. The plane moving portion 2144 may be coupled to the third extension portion 2145 together with the upper second extension portion 2143.

The second auxiliary antenna 2140b may have the same shape as the first auxiliary antenna described above, and may be arranged symmetrically by 180 degrees in the forward direction.

The antenna structure 2140 described above can be formed on the double-sided printed circuit board 2249. The antenna structure 2140 can be formed by patterning the printed circuit board 2249. The antenna structure described above may include at least one of copper, gold, silver, aluminum, and tin.

Figure 13 is a schematic view of a plasma generating apparatus according to another embodiment of the present invention. As shown in FIG. 13, the plasma generating apparatus includes antenna structures (Tmn) 3140a, 3140b, and 3140c which are arranged in a matrix form in a first direction and a second direction across the first direction and have a quadrangular shape. An insulating plate (Smn) 130 arranged in a matrix in a first direction and a second direction across the first direction is disposed under the antenna structure. The metal upper plate 110 includes a through hole (Hmn) 120 which is provided in the insulating plate 130 and has a quadrangular shape. In the antenna structure (Tmn), plasma is formed in a lower portion of the metal upper plate 110. The antenna structure (Tmn) includes: a first antenna structure 3140a disposed on the quadrangular edge; a second antenna structure 3140b disposed adjacent to the quadrilateral side; and a third antenna structure 3140c, The second antenna structure 3140b and the first antenna structure 3140a are surrounded by the second antenna structure. The first antenna structure 3140a may be disposed in the A region, and the second antenna structure 3140b may be disposed in the B region. The third antenna structure 3140c described above may be disposed in the C region.

The above metal upper plate 110 may have a quadrangular shape. The first antenna structure 3140a described above can be disposed close to the edge of the metal upper plate 110. The second antenna structure 3140b is provided close to the side of the metal upper plate 110. The third type antenna structure 3140c may be disposed at the center of the metal upper plate 110.

As shown in FIGS. 10 to 12, the first antenna structure 3140a, the second antenna structure 3140b, and the third antenna structure 3140c may have different physical structures. The first antenna structure 3140a, the second antenna structure 3140b, and the third antenna structure 3140c may have different impedances.

The plasma formed in the lower portion of the metal upper plate 110 by the first antenna structure 3140a, the second antenna structure 3140b, and the third antenna structure 3140c may have uniformity. The first antenna structures 3140a described above may be connected in parallel with each other. The second antenna structures 3140b described above may be connected in parallel with each other. A power supply unit (not shown) may be electrically connected in parallel to the first antenna structure 3140a, the second antenna structure 3140b, and the third antenna 3140c.

Smn. . . Insulation board

Hmn. . . Through hole

Tmn. . . Antenna structure

A. . . First antenna structure

B. . . Second antenna structure

C. . . Third antenna structure

PA. . . Type 1 plasma

PB. . . Second type plasma

PC. . . Type III plasma

PA, PB, PC. . . electric power

NpA, NpB, NpC. . . Plasma density

P1. . . One end

IA. . . First current

IB. . . Second current

IC. . . Third current

P1, P2, P3, P4. . . Power side

G1, G2, G3, G4. . . Ground terminal

100. . . Vacuum container

110. . . Metal plate

130. . . Insulation board

140. . . Antenna structure

150a. . . First reactance element

150b. . . Second reactance element

150c. . . Third reactance element

160. . . Matching circuit

160a. . . First matching circuit unit

160b. . . Second matching circuit unit

160c. . . Third matching circuit unit

170. . . Power supply department

170a. . . First power supply unit

170b. . . Second power supply unit

170c. . . Third power supply unit

240a. . . First antenna structure

240b. . . Second antenna structure

240c. . . Third antenna structure

540. . . Antenna structure

540a. . . First auxiliary antenna

540b. . . Second auxiliary antenna

540c. . . Third auxiliary antenna

540d. . . Fourth auxiliary antenna

541. . . First power department

541a, 543a. . . Inside line

541b, 543b, 545b. . . Outside line

543. . . First extension

545. . . Second extension

547. . . Plane moving part

549. . . First grounding

1140. . . Antenna structure

1140a. . . First auxiliary antenna

1140b. . . Second auxiliary antenna

1141. . . First power department

1142. . . First extension

1142b, 1141b, 1143b. . . Outside line

1142a, 1143a. . . Inside line

1143. . . Second extension

1144. . . Plane moving part

1145. . . Third extension

1146. . . Fourth extension

1147. . . First grounding

1149. . . Printed circuit board

2140. . . Antenna structure

2140a. . . First auxiliary antenna

2140b. . . Second auxiliary antenna

2141. . . First power department

2142. . . First extension

2143. . . Second extension

2144. . . Plane moving part

2145. . . Third extension

2146. . . Fourth extension

2147. . . First grounding

2249. . . Printed circuit board

3140a, 3140b, 3140c. . . Antenna structure

3140a. . . First antenna structure

3140b. . . Second antenna structure

3140c. . . Third antenna structure

1 is a schematic view of a plasma generating apparatus according to an embodiment of the present invention;

Figure 2 is a plan view showing a plasma generating apparatus according to an embodiment of the present invention;

Figure 3 is a cross-sectional view showing a plasma generating apparatus according to an embodiment of the present invention;

4 to FIG. 5 are plan views of a plasma generating apparatus according to another embodiment of the present invention;

Figure 6 is a circuit diagram of a plasma generating apparatus according to an embodiment of the present invention;

FIG. 7 is a schematic diagram showing characteristics of different regions of a plasma generating apparatus according to an embodiment of the present invention; FIG.

Figure 8 is a circuit diagram of a plasma generating apparatus according to another embodiment of the present invention;

FIG. 9 is a schematic diagram of a plasma generating apparatus according to another embodiment of the present invention; FIG.

10 to FIG. 12 are schematic diagrams showing an antenna structure according to an embodiment of the present invention;

Figure 13 is a schematic view of a plasma generating apparatus according to another embodiment of the present invention.

S31‧‧‧Insulation board

H11, H12, H13‧‧‧ through holes

H21, H22, H23‧‧‧ through holes

H31, H32, H33‧‧‧ through holes

T31‧‧‧Antenna structure

100‧‧‧vacuum container

110‧‧‧Metal upper plate

122‧‧‧ hole protrusion

130‧‧‧Insulation board

140‧‧‧Antenna structure

Claims (29)

A plasma generating apparatus comprising: an insulating plate (Smn) arranged in a matrix form along a first direction and a second direction across the first direction; a metal upper plate including a through hole having an insulating plate and having a quadrangular shape And an antenna structure (Tmn) disposed on each of the insulating plates; wherein the antenna structure comprises: a first antenna structure, disposed close to an edge of the metal upper plate; and a second antenna The structure is disposed close to the edge of the metal upper plate; wherein the first type antenna structure consumes more power than the second type antenna structure, thereby forming a uniform plasma. A plasma generating apparatus according to claim 1, wherein the antenna structure further includes a third antenna structure surrounded by the second antenna structure and the first antenna structure. A plasma generating apparatus according to claim 2, wherein the second antenna structure consumes more power than the third antenna structure. A plasma generating apparatus according to claim 2, wherein the number (m) of the insulating plates arranged in the first direction is 3 or more, and the number (n) of the insulating plates arranged in the second direction is 3 or more. A plasma generating apparatus according to claim 1, wherein the first antenna structures are electrically connected in series to each other, and the second antenna structures are electrically connected in parallel with each other. A plasma generating apparatus according to claim 2, wherein the third antenna structures are electrically connected in parallel with each other. A plasma generating apparatus according to claim 1, wherein the antenna structure is formed on a printed circuit board or formed by bending a wire. A plasma generating apparatus according to claim 7, wherein the printed circuit board is a double-sided board, and the antenna structure comprises at least one of gold, silver, copper, nickel, and tin. A plasma generating apparatus according to claim 1 or 2, wherein the antenna structure has the same shape. A plasma generating apparatus according to claim 1, further comprising: a first reactance element electrically connected in series with said first antenna structure; and a second reactance element electrically connected in series with said second antenna structure At least one of them. A plasma generating apparatus according to claim 2, further comprising: a first reactance element electrically connected in series with the first type antenna structure; and a second reactance element electrically connected in series with the second type antenna structure; And at least one of the third reactance elements electrically connected in series with the third type antenna structure. A plasma generating apparatus according to claim 11, wherein the first reactance element, the second reactance element, and the third reactance element include a variable reactance element. A plasma generating apparatus according to claim 11, wherein the first current flowing through each of the antenna structures of the first antenna structure is larger than the second current flowing through each of the antenna structures of the second antenna structure The second current flowing through each of the antenna structures of the second antenna structure is greater than the third current flowing through each of the antenna structures of the third antenna structure. A plasma generating apparatus according to claim 2, further comprising: a power supply unit that supplies power to the antenna structure (Tmn), wherein the power supply unit is electrically connected in series to the first antenna structure and the second The antenna structure and the third antenna structure described above. A plasma generating apparatus according to claim 2, further comprising: a plurality of power supply units that supply power to said antenna structure (Tmn), wherein said first power supply unit supplies power to said first type antenna structure The second power supply unit supplies power to the second antenna structure, and the third power supply unit supplies power to the third antenna structure. A plasma generating apparatus according to claim 15, wherein the first driving frequency of the first power supply unit, the second driving frequency of the second power supply unit, and the third driving frequency of the third power supply unit are At least one is different from each other. A plasma generating apparatus according to claim 2, wherein at least one of the first antenna structure, the second antenna structure, and the third antenna structure has a different configuration. A plasma generating apparatus according to claim 1, wherein at least one of the first antenna structure and the second antenna structure has a different structure. A plasma generating apparatus according to claim 1, wherein the antenna structures (Tmn) each have a quadrangular shape and a two-layer structure. A plasma generating apparatus according to claim 1, wherein the antenna structures (Tmn) are each composed of a plurality of auxiliary antennas, and are arranged to form a closed loop on the same plane. A plasma processing apparatus comprising: a vacuum container for plasma processing a substrate; a substrate holder disposed inside the vacuum container; a metal upper plate disposed on an upper surface of the vacuum container and including a plurality of through holes; and an antenna structure ( Tmn), disposed on the metal upper plate, arranged in a matrix form along a first direction and a second direction across the first direction to form a quadrangle; wherein the antenna structure (Tmn) includes: first The antenna structure is disposed on the quadrangular edge; the second antenna structure is disposed close to the quadrangular edge; and the third antenna structure is surrounded by the second antenna structure and the first antenna structure The power consumption of each of the first antenna structures is greater than the power consumption of the second antenna structure, and the power consumption of each of the second antenna structures is greater than the power consumption of the third antenna structure. A plasma processing apparatus according to claim 21, wherein the number (m) of the insulating plates arranged in the first direction is 3 or more, and the number (n) of the insulating plates arranged in the second direction is 3 or more. A plasma processing apparatus according to claim 21, wherein said first antenna structures are electrically connected in parallel, said second antenna structures are electrically connected in parallel, and said third antenna structures are electrically connected in parallel with each other. A plasma processing apparatus according to claim 21, further comprising: a first reactance element electrically connected in series with the first type antenna structure; and a second reactance element electrically connected in series with the second type antenna structure; And at least one of the third reactance elements electrically connected in series with the third type antenna structure. A plasma processing apparatus according to claim 24, wherein the first current flowing through each of the antenna structures of the first antenna structure is larger than the second current flowing through each of the antenna structures of the second antenna structure The second current flowing through each of the antenna structures of the second antenna structure is greater than the third current flowing through each of the antenna structures of the third antenna structure. A plasma processing apparatus according to claim 21, further comprising: a power supply unit that supplies power to the antenna structure (Tmn), wherein the power supply unit is electrically connected in parallel to the first antenna structure and the second The antenna structure and the third antenna structure described above. A plasma processing apparatus according to claim 21, further comprising: a plurality of power supply units that supply power to said antenna structure (Tmn), wherein said first power supply unit supplies power to said first type antenna structure The second power supply unit supplies power to the second antenna structure, and the third power supply unit supplies power to the third antenna structure. A plasma processing apparatus according to claim 21, wherein the first driving frequency of the first power supply unit, the second driving frequency of the second power supply unit, and the third driving frequency of the third power supply unit are At least one is different from each other. A plasma processing apparatus according to claim 21, wherein at least one of the first antenna structure, the second antenna structure, and the third antenna structure has a different configuration.