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TWI316165B - Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent - Google Patents

Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent

Info

Publication number
TWI316165B
TWI316165B TW094113715A TW94113715A TWI316165B TW I316165 B TWI316165 B TW I316165B TW 094113715 A TW094113715 A TW 094113715A TW 94113715 A TW94113715 A TW 94113715A TW I316165 B TWI316165 B TW I316165B
Authority
TW
Taiwan
Prior art keywords
fine patterns
forming fine
agent
over
coating agent
Prior art date
Application number
TW094113715A
Other languages
English (en)
Other versions
TW200609685A (en
Inventor
Yoshiki Sugeta
Fumitake Kaneko
Toshikazu Tachikawa
Naohisa Uenoi
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200609685A publication Critical patent/TW200609685A/zh
Application granted granted Critical
Publication of TWI316165B publication Critical patent/TWI316165B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • E—FIXED CONSTRUCTIONS
    • E03—WATER SUPPLY; SEWERAGE
    • E03F—SEWERS; CESSPOOLS
    • E03F3/00—Sewer pipe-line systems
    • E03F3/06—Methods of, or installations for, laying sewer pipes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C63/00—Lining or sheathing, i.e. applying preformed layers or sheathings of plastics; Apparatus therefor
    • B29C63/26—Lining or sheathing of internal surfaces
    • B29C63/34—Lining or sheathing of internal surfaces using tubular layers or sheathings
    • B29C63/341—Lining or sheathing of internal surfaces using tubular layers or sheathings pressed against the wall by mechanical means
    • H10P50/73—
    • H10P76/204—
    • E—FIXED CONSTRUCTIONS
    • E03—WATER SUPPLY; SEWERAGE
    • E03F—SEWERS; CESSPOOLS
    • E03F3/00—Sewer pipe-line systems
    • E03F3/06—Methods of, or installations for, laying sewer pipes
    • E03F2003/065—Refurbishing of sewer pipes, e.g. by coating, lining
    • H10P76/4088—

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Public Health (AREA)
  • Water Supply & Treatment (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW094113715A 2004-04-30 2005-04-28 Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent TWI316165B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004135458A JP4428642B2 (ja) 2004-04-30 2004-04-30 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法

Publications (2)

Publication Number Publication Date
TW200609685A TW200609685A (en) 2006-03-16
TWI316165B true TWI316165B (en) 2009-10-21

Family

ID=35187961

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094113715A TWI316165B (en) 2004-04-30 2005-04-28 Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent

Country Status (5)

Country Link
US (4) US20050245663A1 (zh)
JP (1) JP4428642B2 (zh)
KR (1) KR100895791B1 (zh)
CN (1) CN1693994A (zh)
TW (1) TWI316165B (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4566862B2 (ja) 2005-08-25 2010-10-20 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
KR100737851B1 (ko) * 2006-07-07 2007-07-12 제일모직주식회사 미세패턴 형성용 수지 조성물 및 이를 이용한 미세패턴형성방법
JP4869811B2 (ja) 2006-07-19 2012-02-08 東京応化工業株式会社 微細パターンの形成方法
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
US7745077B2 (en) * 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP5011345B2 (ja) * 2009-05-15 2012-08-29 東京エレクトロン株式会社 レジストパターンのスリミング処理方法
JP5206622B2 (ja) * 2009-08-07 2013-06-12 三菱瓦斯化学株式会社 金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法
JP5635449B2 (ja) * 2011-03-11 2014-12-03 富士フイルム株式会社 樹脂パターン及びその製造方法、ｍｅｍｓ構造体の製造方法、半導体素子の製造方法、並びに、メッキパターン製造方法
US8968586B2 (en) * 2012-02-15 2015-03-03 Jsr Corporation Pattern-forming method
JP2017165846A (ja) * 2016-03-15 2017-09-21 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細パターン形成用組成物およびそれを用いた微細パターン形成方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5034966B2 (zh) * 1972-07-24 1975-11-12
JPH01307228A (ja) 1988-06-06 1989-12-12 Hitachi Ltd パターン形成法
EP0476840B1 (en) * 1990-08-30 1997-06-18 AT&T Corp. Process for fabricating a device
JPH04364021A (ja) 1991-06-11 1992-12-16 Sumitomo Electric Ind Ltd 半導体装置の製造方法
JPH05166717A (ja) 1991-12-16 1993-07-02 Mitsubishi Electric Corp 微細パターン形成方法
JP3057879B2 (ja) 1992-02-28 2000-07-04 株式会社日立製作所 半導体装置の製造方法
JP3218814B2 (ja) 1993-08-03 2001-10-15 株式会社日立製作所 半導体装置の製造方法
JP4329216B2 (ja) 2000-03-31 2009-09-09 Ｊｓｒ株式会社 レジストパターン縮小化材料及びそれを使用する微細レジストパターンの形成方法
JP2002184673A (ja) 2000-12-15 2002-06-28 Matsushita Electric Ind Co Ltd レジストパターン形成方法
JP3825294B2 (ja) 2001-09-28 2006-09-27 東京応化工業株式会社 レジストパターンの微細化方法及びその方法に用いるレジストパターン微細化用被覆形成液
JP3628010B2 (ja) 2001-07-05 2005-03-09 東京応化工業株式会社 レジストパターン微細化用被覆形成剤及びそれを用いた微細レジストパターン形成方法
JP3662870B2 (ja) 2001-07-05 2005-06-22 東京応化工業株式会社 レジストパターン微細化用被覆形成剤及びそれを用いた微細レジストパターン形成方法
JP3476082B2 (ja) 2001-11-05 2003-12-10 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
JP3476080B2 (ja) 2001-11-05 2003-12-10 東京応化工業株式会社 微細パターンの形成方法
JP3476081B2 (ja) 2001-12-27 2003-12-10 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
JP3707780B2 (ja) 2002-06-24 2005-10-19 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法

Also Published As

Publication number Publication date
KR100895791B1 (ko) 2009-05-08
KR20060047616A (ko) 2006-05-18
US20090126855A1 (en) 2009-05-21
US8142980B2 (en) 2012-03-27
US20070213447A1 (en) 2007-09-13
CN1693994A (zh) 2005-11-09
JP4428642B2 (ja) 2010-03-10
JP2005316239A (ja) 2005-11-10
TW200609685A (en) 2006-03-16
US20100086694A1 (en) 2010-04-08
US20050245663A1 (en) 2005-11-03

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees