TWI302075B - - Google Patents

Description

1302075 (1) Technical Field of the Invention The present invention relates to a plasma processing apparatus and a plasma processing method relating to a plasma and a plasma processing method capable of suppressing generation of foreign matter by a reaction product. [Prior Art] A volatile material such as Si, A, Si 02 or the like is used as an etched material DRAM (Dynamic Random Access Memory) or an IC used in the field of semiconductor device manufacturing. Fe materials are used in Ferroelectric Random Access Memory or Magnetic Random Access Memory. Non-volatile materials are difficult to etch due to the high reaction sites generated during uranium engraving. Moreover, since the reverse vapor pressure after etching is very low, the coefficient is high in the vacuum vessel (vacuum processing chamber), so the light is processed a small number (several to several hundred). The inner wall of the vacuum vessel is accumulated due to the reaction product. The material is covered with the deposit and once it is peeled off, foreign matter is generated. Once the reaction product is deposited, the bonding state of the sensing antenna and the reaction slurry changes, and the etching rate or its uniform perpendicularity changes with respect to the adhesion state of the reaction product on the etching sidewall. Further, a specific example of the above-mentioned non-volatile material is a method, and a special processing device is a sample which is attached to a wall of a fusion circuit of a non-volatile material such as a MRAM (MRAM), and a container. Internal electricity, etching conditions, etc.: used in -7- (2) 1302075 MRAM or magnetic heads such as ferromagnetic or antiferromagnetic materials, Fe, NiFe, PtMn, IrMn, DRAM capacitors or gates, Capacitors of FRAM and Pt, I r, A u, T a, and R u of precious metal materials in the TMR (Tunneling Magneto Resistive) element portion of MRAM. In addition, Al2 03, Hf03, which are high dielectric materials, are used. Ta203, PZT (lead titanate), BST (barium titanate), SBT (maximum acid), etc. of the ferroelectric material. In the same semiconductor device manufacturing field, the manufacturing process of the semiconductor device In many cases, a Si, SiO 2 or SiN film is formed by a plasma CVD method. In this technique, a polymerizable gas such as monodecane is incident on a plasma to form a film on a wafer. A large amount of polymer film will adhere to the reaction vessel outside the wafer. The production stability is hindered, that is, when a polymer film which is too thick is deposited on the inner wall of the reaction container, the polymer film peels off from the inner wall surface, and as in the case described above, foreign matter adheres to the wafer. Perform plasma cleaning with a special gas such as NF3, or open the reaction vessel for manual cleaning. In the field of semiconductor device manufacturing, most of the plasma dry etching process using SiO2 is used. Fluoride nitrogen such as C4F8, C5F8, CO, CF4, or chf3 is used as an etching gas. In the plasma, most of the reaction products formed by the reaction of these gases contain free radicals such as C, CF, and C2F2. Once the radicals are deposited on the inner wall of the reaction vessel, the same happens as in the case described above, which causes foreign matter to occur. Once the radical is evaporated from the plasma again in the plasma, it changes in the plasma. The chemical composition, and the etch rate of the wafer will change over time. -8- (3) (3) 1302075 The conventional plasma processing apparatus is known to have a so-called coil-like day on the outer circumference of the vacuum vessel. Inductive plasma processing device, or plasma processing device for introducing microwave into a vacuum container, etc. No matter which kind of processing device is used, it is not sufficient to form a deposit on the inner wall of the vacuum container when etching a non-volatile material. 'Therefore, as the atmosphere is opened, the washing by manual operation is repeated. When the washing is started by the manual operation, it takes about 6 to 2 hours until the next sample is processed. For example, in Japanese Patent Publications 1, 2, and 3, it is disclosed that, while inductively generating plasma in the processing container, and also between the sensing antenna and the plasma disposed outside the vacuum container, The Faraday shields and connects the high-frequency power source to the Faraday shield to supply electric power, thereby reducing the plasma treatment device that attaches the reaction product to the inner wall of the vacuum vessel or can wash the inner wall of the vacuum vessel. This apparatus is effective for a portion of a vacuum vessel which is formed of a non-conductive material, i.e., ceramic or quartz, and which sufficiently satisfies the electric field caused by the Faraday shield. However, it is not very effective for a portion formed of other non-conductive substances or a portion formed of a conductive substance. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 1 0-2 7 5 694 [Patent Document 2] Japanese Patent Laid-Open; Π - 6 1 8 5 7 -9- (4) (4) 1302075 [Private Document 3] JP-A-2000- 3 2 3 2 9 8 [Problems to be Solved by the Invention] As described above, as soon as a reaction product is deposited on the inner wall of the vacuum vessel, the deposited film peels off from the inner wall surface. It becomes a foreign matter and adheres to the wafer. In the plasma processing apparatus using the inductive antenna, the bonding state of the sensing antenna and the plasma in the reaction container may change, and the etching rate or uniformity thereof, the uranium perpendicularity, and the condition of the etching side wall adhesion reaction product may be It has changed over time. When the inner wall of the vacuum container is washed, it takes time until the next sample is processed, so that the operation efficiency of the device is lowered. The Faraday shield is disposed between the sensing antenna and the plasma disposed on the outer circumference of the vacuum container, and the Faraday shield is connected to the high-frequency power source to supply electric power, thereby reducing the reaction product to adhere to the inner wall of the vacuum container, or The plasma processing device for washing the inner wall of the vacuum container has a certain effective range. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and provides a plasma processing apparatus which controls a stacked film deposited on an inner wall of a vacuum container and which is excellent in mass production stability. [Discussion] [Means for Solving the Problems] In order to solve the above problems, the present invention employs the following means. And a gas ring including a discharge port of -10 (5) 1302075 of a process gas, a vacuum bell that forms an upper portion of the gas ring to form a vacuum processing chamber, and a vacuum chamber disposed in the vacuum chamber An antenna for supplying a high-frequency electric field to the upper portion of the bell jar to generate a plasma, a mounting table on which the sample is placed in the vacuum processing chamber, and an antenna and a vacuum clock disposed on the upper portion of the bell jar

a Faraday shield that imparts a high-frequency bias voltage to the hood, and an anti-sliding plate that is detachably attached to the inner surface of the gas ring except for the discharge port of the processing gas, and includes the sample from the sample The area of the inner surface of the gas ring of the anti-plate is seen on the surface, and is set to be about 1 /2 or more of the sample area. [Embodiment] [Embodiment of the Invention] Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. In the first embodiment, when the sample subjected to the plasma treatment is a non-volatile material, the etch treatment is taken as an example, and a method of suppressing the accumulation of the reaction product to the inner wall of the vacuum container during the treatment will be described. Fig. 1 is a cross-sectional view showing the plasma processing apparatus of the present embodiment. The vacuum vessel 2 is a vacuum processing chamber in which a vacuum bell cover 1 2 made of an insulating material (for example, a non-conductive material such as quartz or ceramic) for closing the upper portion thereof is formed. The inside of the vacuum container is provided with a mounting table 5 for placing the sample 1 belonging to the workpiece, and a plasma 6 is generated in the processing chamber to process the sample. The mounting table 5 is formed on the data holding portion 9 including the mounting table. On the outer circumference of the vacuum bell cover 12, a coil-shaped upper antenna 1a and a lower antenna 1b are disposed. On the outside of the vacuum bell jar 12 is provided a disk-shaped Faraday shield 8 which is combined with the plasma 6 static -11 - (6) (6) 1302075 electric valley type. The antennas 1a, 1b and the Faraday shield 8 are connected in series to a local frequency power supply (first high frequency power supply) via the integrator (matching box) 3 as described above. A series resonant circuit (variable capacitor VC3 and reactor L2) which can change the impedance between the Faraday shield 8 and the ground is juxtaposed. The processing gas is supplied to the vacuum vessel 2 via the gas supply pipe 4a. The gas in the vacuum vessel 2 is decompressed and evacuated to a predetermined pressure via the exhaust unit 7. The processing gas is supplied from the gas supply pipe 4a to the inside of the vacuum vessel 2, and in this state, the processing gas is plasmatized by the electric field generated by the antennas 1a and 1b. A substrate bias power supply (second high frequency power supply) 11 is connected to the mounting electrode 5. Thereby, ions existing in the plasma 6 are introduced onto the sample 13. Furthermore, the high frequency power supply can be used, for example. 56MHz, 27. 12MHz, 40. High-frequency power in the HF band such as 68MHZ or a high-frequency power source such as a VHF band of a higher frequency is used to supply high-frequency power to the inductive coupling antennas 1a, 1b and the Faraday shield 8, thereby enabling vacuum An electric field for plasma generation is obtained in the container 2. At this time, the integrator (matching box) 3 is used to make the impedance of the inductive coupling antennas 1a, 1b coincide with the output impedance of the high-frequency power source 10, whereby the reflection of electric power can be suppressed. The integrator (matching box) 3 can be connected to the variable capacity capacitors Vcl, Vc2 in an inverted L shape as shown, for example. As shown in Fig. 2, the Faraday shield is a conductor type having a straight stripe slit 14 and is disposed so as to overlap with a ceramic vacuum vessel (vacuum bell jar 1 2 ). The voltage applied to the Faraday shield 8 can be adjusted by the aforementioned -12-(7) (7) 1302075 variable capacitor (V C3 shown in Fig. 1). The processing method for each wafer applied to the voltage (shielding voltage) of the Faraday shield 8 or the method corresponding to the rinsing treatment may be set to an arbitrary value. Furthermore, the principle of rinsing the inner wall of the vacuum vessel shielded by Faraday is to generate a bias voltage in the interior of the vacuum vessel (the inner wall of the vacuum bell) according to the known high frequency voltage of the Faraday shield, thereby absorbing the ions in the plasma. Introduced into the wall of the vacuum vessel, the vacuum vessel wall is impacted by the introduced ions to cause physical and chemical sputtering to prevent the reaction product from adhering to the vacuum vessel wall. It has a Faraday Shield Voltage (FSV) that is most suitable for rinsing the inner wall of the wall by Faraday shielding. The most appropriate F S V affects the frequency of the high-frequency power source, the material of the vacuum vessel wall, the density of the plasma, the composition of the plasma, the composition of the entire vacuum vessel, and the material, processing speed, and processing area of the workpiece. Therefore, the optimum fit of the F S V needs to be changed in each process. Fig. 3 is a view for explaining a method of optimizing F S V, showing the relationship between f S V and the luminous intensity (light amount) of the vacuum vessel wall material (for example, aluminum or oxygen constituting alumina when the wall material is alumina). As shown in the figure, 'When a certain FSV (Fig. 3 is point b) is the limit, if Fsv becomes high, the light emission of the wall material becomes stronger. This is a state indicating that ρ s V below point b, deposits (precipitates) will accumulate on the wall, and FSV ' above b point means that the precipitate will only be deposited without sputtering, and the wall material itself will be Sputtering. The FSV is best suited to the voltage at point b, but depending on the process, the & point is also the most appropriate. For example, due to the sputtering of the vacuum wall material, the wall material is released -13- (8) 1302075 in the gas phase, thereby assuming that the treatment reaction of the treated material or the gas phase is staggered, there is a process equivalent to the desired process. It is believed that by setting the FSV at point a, deposits are deposited in the vacuum vessel, whereby the wall material is not splashed at all. The process is hindered by the release of wall material. However, when depositing sediment on the inside of the vacuum vessel, it is necessary to wash the inner wall of the vacuum vessel with a setting that is higher than the b point by the FSV. Contrary to the above, there is also a point c which is the most suitable process. When the reaction product is accumulated on the inner wall of the vacuum vessel, the high-frequency power generated by the generator is absorbed by the deposit, and the plasma is specialized, and the intended process is not stably performed. In this case, as described earlier, it is set at point c. That is, the inner wall can be slightly reduced, and the product can be set to a condition that does not accumulate at all. At this time, there is a disadvantage that the consumption of the empty container is increased, but the number of times of washing the inner wall is reduced, and the inner wall is cut and the reaction product is not accumulated, and the FSV is set at point b. At this point, it is important that the FSV settings are good. This is because when a different device is used, or when the same process is continuously performed for the same device, a change in suppression is required. Therefore, the feedback control of F S V becomes very important. Fig. 4 is a diagram for explaining the feedback control of F S V . The output of the high-frequency power supply 10 for plasma generation is applied to the Faraday screen FSV via the impedances VC1 and VC2), and the capacitors C2 and C3 are divided by the capacitors C2 and C3 to form a small signal. In addition to high-modulation waves or other frequency components, the reaction shape in a 14-etc. In this way, the wall can be prevented from being insufficiently stacked, for example, to foreign matter, or the property is changed. The FSV is reacted to the so-called true desired voltage, and the same process is shown in the time series. 8. Detect and filter through the detector (9) (9) 1302075 16 and convert it to DC voltage and amplify it with amplifier 17. Thus, a d C voltage signal proportional to FSV can be obtained. This signal is compared with a preset 値 or setting 设定 set by the comparator i 8 by the program output of the main body control unit 2 ,, and the motor is controlled by the motor control unit 19 to determine the voltage rotation by the FSV. The variable capacitor VC3 can thereby control the FSV to be controlled by the main device control unit 20, for example, when the same process is continuously processed by different devices or the same device, and the FSV can be controlled to a certain state. Moreover, it can suppress the gap between devices and the change of time. The Faraday shield is combined with the plasma through the wall of the dielectric vacuum vessel (vacuum bell jar). As a result, the FSV is The electrostatic capacitance between the Faraday shield and the plasma and the ion sheath of the wall are divided, and the divided voltage is related to the ion sheath, thereby accelerating the ions to cause ion sputtering on the inner wall of the vacuum vessel. When the thickness of the vacuum vessel wall made of alumina is 10 mm, the voltage applied to the ion sheath is about 60 V when the FSV is 500 V. It is useful to increase the voltage applied to the ion sheath with a very low FSV. The high FSV is generated because it is easy to discharge abnormally, etc., and the processing becomes more difficult. For the rise of the voltage applied to the ion sheath with a very low F SV , and the determination of the electrostatic capacity process using the ion sheath For the sake of slurry properties, it is very effective to minimize the electrostatic capacitance between the Faraday shield and the plasma. To achieve this, as long as the induction rate of the dielectric vacuum vessel material is increased, the dielectric vacuum can be minimized. The wall thickness of the container. The material suitable for this point can be made of -15- (10) (10) 1302075. When the material is used to make a vacuum container with a thin wall thickness, there is a problem that there is a gap between the Faraday shield and the wall of the vacuum vessel (vacuum bell jar). The alumina induction rate is about 8, 10 mm wall thickness. When the thickness is converted to atmospheric conditions, it is 10/ 8 = 1.  2 5 m m. Here, it is assumed that the gap between the Faraday shield and the plasma is considered to be 1 in the atmosphere when the gap between the Faraday shield and the vacuum vessel is 〇 to 1 m m .  2 5 to 2 · 2 5 m m, which is very close to one-half times. At this time, under the previous conditions, the voltage of the ion sheath will vary from about 3 3 V to 60 V. When the voltage of the ion sheath changes greatly, the deposit (precipitate) adheres to a certain part of the inner wall of the vacuum vessel, and the other parts do not adhere to the deposit, whereby the known FSV reduces the suppression of sediment. The effect of attachment. In order to prevent this, it is necessary to make the gap between the Faraday shield and the vacuum container constant, or to form a Faraday shield by a film to seal the vacuum container. It is very simple to make a Faraday shield from a machined metal sheet, but the gap between the wall and the wall of the vacuum vessel (vacuum bell jar) is 〇.  It cannot be achieved below 5 m m. However, a conductive elastomer such as a conductive sponge is adhered under the Faraday shield, and the sponge is used to bury the gap between the shield and the vacuum container wall. Fig. 5 is a view showing an example of mounting of a Faraday shield for a vacuum bell jar. Figure 5 (a) is shielded in Faraday! In the case where a gap is provided between the vacuum bell jar 1 and the vacuum bell jar 12, the inner surface of the vacuum vessel in a certain portion of the gap becomes very dense. -16-(11) (11) 1302075 is easy to accumulate deposits. On the other hand, the vicinity of the gap is a state in which no accumulation is accumulated. Fig. 5(b) is a view showing an example in which the gap elastic conductor 1 2 a is embedded, for example, a conductive sponge. Thereby, the Faraday shield 14 can obtain the same effect as the sealing of the vacuum bell 1 . Further, since the conductive sponge has a large stretchability, it can be softly embedded in a gap having a large size. Fig. 6 is a view showing a mounting structure of the squeegee, and Fig. 6(a) is a view showing a gas discharge port 23 formed in the hem of the vacuum bell 1 and the gas ring below it. In this configuration, when the electric hair treatment is continued, the deposits are accumulated in the portions indicated by A and B in the figure. On the inside of the vacuum bell jar, the portion above the B of the figure will not accumulate deposits due to the effect of ion sputtering by F SV. The problems generated here are the parts shown in the aforementioned A and B. The portion of A refers to the periphery of the gas discharge port 23. When the deposit adheres to the deposit, the deposit becomes easily peeled off due to the effect of the air flow, and the peeled deposit becomes foreign matter attached to the wafer belonging to the processed object. On, hinder the process. The portion of B refers to the inner wall of the vacuum bell cover 12, but the Faraday shield 14 is far from the inner wall of the vacuum bell jar. Therefore, the ion sheath voltage by F s V is lowered, and the effect of suppressing the deposition of deposits due to ion sputtering is insufficient. Fig. 6(b) is a structural view for explaining that the gas discharge port 23 is covered by the anti-slip plate 22. The portion of the aforementioned A means that the vicinity of the gas discharge port is required to minimize the adhesion of deposits to the portion. Decreasing the adhesion of the deposit to the gas discharge port 2 3 is to reduce the area of the plasma 6 which is visible from the gas discharge port 2 3 through the hole of the prevention plate 22, that is, to reduce the angle of view relative to the electric prize -17- ( 12) (12) 1302075, the gas discharge port 23 does not directly see the wafer, that is, the central axis of the gas discharge port 23, and the sample is included in the above-mentioned viewing angle, and plasma generation above the sample is required. Spatial direction. Fig. 6(c) is a detailed view showing the relationship between the anti-slip plate and the gas ejection port. In this case, the viewing angle is reduced to about 3 degrees, and the wafer cannot be seen directly from the gas ejection orifice. At this time, it is effective to prevent the gap between the preventing plate 22 and the gas discharge port 23 with a gap therebetween. I hope the size of the gap is 〇. 5mm or more. Several advantages are created via this gap. First, the holes formed by the gas formed on the preventing plate are the same size, and the viewing angle to the plasma can be reduced by the gap, and the amount of the deposit adhering to the gas discharge port 23 can be reduced. When the gas is ejected from the gas ejection port 23 into the vacuum vessel, a large pressure drop occurs, and the flow proceeds from the viscous flow to the intermediate flow, and finally becomes a molecular flow. Here, in the vicinity of the gas discharge port 23, the pressure of the gas is still relatively high in the intermediate flow state, and once the deposit adheres thereto, the force from the air flow is absorbed, and the deposit is easily peeled off. . By the gap, the airflow in the vicinity of the anti-plate 22 becomes a molecular flow, and the flow of the deposit which adheres to the deposit of the anti-plate is reduced, and the peeling of the deposit can be reduced. Further, as described later, the amount of the deposit adhering to the preventing plate 22 can be reduced by efficiently increasing the temperature of the preventing plate 22. Fig. 7 is a view showing an example of heat calculation of the anti-sliding plate. As a result of the processing of the process, it was found that a material such as Fe or Pt was hard to adhere to a member of 250 ° C or more. Then, the anti-plate is designed such that the temperature of the above-mentioned anti-slip plate is 250 ° C or higher. The thermal balance of the -18-(13) (13)1302075 heat from the plasma, the heat diffusion from the support of the anti-plate, and the diffusion of the heat radiation from the entire plate are calculated by thermal design. The result of this heat calculation is shown in Fig. 7. When the anti-slip board is SUS (stainless steel), it is known that the high frequency (RF) input to the plasma is about 500 W and the equilibrium temperature will exceed 250 °C. When the anti-plate is A1 (surface acid-resistant aluminum processing), the RF input is 1 000 W or more, and the plate balance temperature is 250 ° C or more. The following describes the characteristics of each part corresponding to the calculation. The large heat of the plasma is caused by the plasma diffusion in the reactor. Therefore, the RF input X of the conventional plasma is used to prevent the board area/plasma from contacting the entire area. The design of the anti-plate form is that the RF input to the plasma = 1 200W, the heat to the anti-plate is 2 60 W. The thermal radiation from the anti-plate is diffused because the material is S U S and the surface is mirror finished with a surface emissivity of 0. 2 or so, so it can be suppressed very low. When the anti-plate is used with A1 (surface acid-resistant aluminum treatment), since the surface resistance of the acid-resistant aluminum is about 0.6, the thermal radiation diffusion increases. Fig. 8 is a view showing a support structure of the anti-sliding plate. In order to reduce the heat transfer from the support portion, the anti-sliding plate supports the entire circumference at three points, and the contact portion area with the gas ring main body is substantially in point contact as shown in Fig. 8 to suppress the heat transfer area. Specifically, the a' contact portion has a radial length of 3 mm and the contact portion has a length in the same direction of 1 mm. It is estimated that the contact thermal resistance will become too large for the degree of 3000 [W / (m2 K)], and the anti-plate support calculated from the contact area X contact heat transfer rate x (the inner surface temperature of the plate - the gas ring temperature) The heat transfer of the part should be only about 10W. ~ 19 - (14) 1302075 Actually try to prevent the board and actually measure the surface temperature. The material of the board is A1 (surface acid-resistant aluminum). Confirmed at the RF input, the surface temperature is about 205 °C, which is about the design flaw. As mentioned earlier, even if the anti-plate is maintained at a very high temperature, no deposits are attached. Therefore, it is important that the deposit adhering to the anti-sliding plate adheres. Therefore, it is desirable to have a slight unevenness on the surface of the anti-sliding plate because the adhesion of the mechanical material is good. The inventors experimented and learned that the desired surface roughness is ΙΟμπι or more. However, when the deposit starts to adhere, the deposited deposit gradually thickens its membrane state. For example, the 10 μm of the anti-plate has a bonding effect with respect to a deposit having the same film thickness. However, if the film thickness of the deposit becomes thick, the bonding effect is weak. Therefore, the initial state in which the amount of deposits is small to the amount of deposits is increased to a certain extent. The effective effect of the bonding effect is that it is desired to have both the unevenness of the ΙΟμηι and the unevenness of ΙΟΟμπι on the surface. Such a concavity and convexity method can be formed by, for example, embossing the concavities and convexities forming 1 ΟΟμη into a concave-convex formation of 10 μm. As described above, increasing the temperature of the anti-plate is to mirror the surface of the anti-plate, and it is desirable to form a surface in order to stably adhere the deposit. Therefore, it is possible to mirror the surface on which the deposit is adhered to the surface of the plasma (the surface on which the surface of the plasma is uneven, and the surface on which the deposit is not adhered (for example, the surface facing the gap between the plate and the gas port) is mirror-finished. The heat radiated from the plate is expected to be mirror-finished on the surface of the gas discharge port of the gas ring that is not attached to the deposit. The anti-1 2 0 0 W can not be completely stabilized and stacked. By the processing of the unevenness, the adhesion, and the irregularity of the shape of the pile, the surface is formed into a concave-convex). The formed body is sprayed out and the surface is prevented from being -20- (15) (15) 1302075. Covers the smallest size of the gas outlet. This is to prevent a small amount of deposits from accumulating on the anti-plate. In order to reduce the amount of deposits, in addition to the relationship between the temperature, the thermal hysteresis of the anti-plate is caused, and the heat of the deposit and the anti-plate material is caused. The difference in the amount of expansion and contraction, the deposit is easily peeled off. The anti-slip board is made of a material that is electrically conductive and is intended to be grounded. This is to increase the discharge area in addition to the grounding area of the high frequency used to generate the plasma. When the deposit is charged, the deposits become easily detached from each other due to the counter-distribution of the Coulomb force, and the deposit can be prevented from being charged as much as possible. The above structural design and thermal design were carried out to produce an anti-scratch sheet having a surface roughness of ΙΟμιη and ΙΟΟμηι, and the crude platinum Pt was etched continuously for 500 pieces to investigate the performance. As a result, the amount of deposition of the deposit to the gas discharge port was hardly observed. The deposit attached to the anti-sliding plate is very stable, and even the exfoliation of the deposit does not occur. Fig. 9 is for the portion of the B portion attached to Fig. 6 (the Faraday shield of the vacuum bell jar 12 is away from the inner wall of the vacuum bell jar. Therefore, the ion sheath voltage is lowered by the F SV, and the ion sputtering is deposited. The illustration of the deposit measures for the part of the part where the effect of the object adhesion suppression is not sufficient is explained. Part B of Fig. 6 is because the inner wall of the vacuum bell jar 12 has a long distance from the Faraday shield 14 and it is difficult to effectively utilize the region of the ion sputtering of the F S V . Thus, the anti-plate 22 is extended, and by covering the portion, the amount of deposition of the deposit is reduced, and the accumulation of the deposit can be achieved. Although this structure is shown, it is Fig. 9 (a). When using this test for the adhesion of deposits - 21 - (16) (16) 1302075, it is understood that at the center of point c of Fig. 9 (a), the deposit adheres to the inner wall of the vacuum bell jar by about 15 mm. region. Fig. 9(b) is a modification of Fig. 9(a). As shown in the figure, the vacuum bell cover 12 is formed substantially continuously on the inner surface of the gas ring 4, and the vacuum bell cover 12 is placed on the gas ring 4 to form a vacuum processing chamber. According to this configuration, the anti-plate is continuously formed on the inner surface of the vacuum bell jar and the inner surface of the gas ring. Thereby, it is possible to effectively protect the region where the ion sputtering of the aforementioned F S V is effectively protected by the anti-plate. Fig. 10 is a view for explaining the deposition of deposits on the near plate. First, what is not indicated by a broken line refers to an iso-density line of plasma. Note that point C is equivalent to the corner portion formed by the anti-slip plate and the vacuum bell, and the plasma density of this portion is of course lower than that of the periphery. This is because it is difficult to return the plasma to point C due to the thickness of the anti-plate. Therefore, it is considered that the c-point is reduced by the number of ions corresponding to the unit area of the inner wall of the vacuum bell jar, and the deposit is difficult to obtain. I think there is another reason. That is, the anti-plate has electrical conductivity, and F S V is ineffective for the ion sheath generated on the anti-plate, and the ion sheath is subjected to a DC voltage of about 15 to 2 〇V determined according to the plasma characteristic 1. In this regard, the effective region of the FSV is an ion sheath formed on the inner wall of the vacuum bell, and a high-frequency voltage of, for example, about 60 V, which is determined according to the characteristics of the plasma, is applied, which is effective for ion acceleration. Splash the inner wall of the vacuum bell. In the vicinity of point C, it is a low-voltage ion sheath corresponding to the self-generated anti-slip plate, and is moved to the transition region of the high-voltage ion sheath formed on the inner wall of the vacuum bell jar, and moves away from the anti-plate near the point C. While the voltage of the ion sheath rises, it slowly becomes a very effective area from the -22-(17)(17)l3〇2〇75 subspray. For the two reasons described above, as shown in Fig. 1 , it is considered to form a weakly sputtered region using FSV near the point C. In this area, in addition to the attachment of the cane, it is considered to be more likely to adhere to deposits than the sputtering using F S V. The first, fourth, and twelfth drawings respectively show an example of the structure of the anti-sliding plate. As shown in Fig. 1, in order to remove the cause of the decrease in the plasma density which is one of the causes of the weak sputtering region, a blade-shaped anti-scratch plate was produced and tested. As a result, as shown in Fig. 1, the weak sputtering region is reduced, and it is confirmed that the deposit adhering region is reduced. Therefore, in order to remove another cause, as shown in Fig. 2, in the case where the upper portion 22a of the anti-plate is changed to an insulator (in this case, alumina), as shown in Fig. 12, strong sputtering can be performed. The area is consistent with the deposit area and there is almost no deposit attachment. Since the surface of alumina cannot be embossed, plastic processing is used to perform uneven processing on the surface. The material of the insulator can also be quartz or aluminum nitride. More complete prevention of deposits, as shown in Figure 13, the strong sputter area is of course wider than the deposit attachment area. Thus, it is possible to invade the plasma between the anti-plate and the vacuum bell, and to provide a gap between the anti-plate and the vacuum bell. In order to allow plasma to enter, the gap spacing needs to be sufficiently larger than the ion sheath gap to be more than 5 m m. If it is too large, the deposit will be weak due to the diffusion backflow. The maximum enthalpy of the gap in which the deposit diffuses without reflow is determined by the material of the deposit, the type of gas, and the pressure thereof. The process varies depending on the treatment process, but the test result and its target are 15 mm. The anti-sliding plate of the structure shown in Fig. 3 was produced, and the test was carried out. -23-(18) (18)1302075 The adhesion of the deposit to the vacuum bell jar was completely suppressed. In the case of this configuration, the anti-plate portion is not necessarily an insulating material, and even if it is composed of an electric conductor, the performance does not change. When deposits adhere to the upper portion of the crystal holder of the cover portion of the mounting table 5, foreign matter is generated on the wafer. As a result, a high-frequency bias is applied to the crystal holder, and physical and chemical ion sputtering is caused, and the deposit is not adhered to. Fig. 14 is a structural view showing the sample holding portion 9 including the mounting table. As shown in the figure, a mounting table for connecting the substrate bias power source 1 1 is mounted on the upper surface of the ground base layer 36 and the insulating base layer 35. The material of the mounting table is generally made of aluminum or titanium alloy. A portion of the object to be processed (sample 13) is placed on the upper portion of the mounting table to form a dielectric film, whereby the object to be processed can be electrostatically adsorbed. The dielectric film is a solvent film in the drawing, but it may be formed of a polymer material such as epoxy, polyimide or silicone. Ceramic materials formed by spraying or the like are available in the name of Shimyo, Niobium, PBN (Pyolyc Boron Nitride). On the other hand, in the case of Fig. 4, the grounding layer 36 and the insulating cover 37 are shielded in order to prevent the high-frequency power from being extracted by the plasma in the side surface direction of the mounting table 5. On the other hand, the crystal holder is generally made of quartz or alumina as a material to prevent damage by covering the electrode portion of the electrode portion other than the sample on which the mounting table is mounted. Fig. 15 is a view showing a substrate bias circuit (equivalent circuit) excluding the surface of the wafer. The substrate bias power supply 1 1 is mixed with a DC voltage for electrostatic adsorption supplied from the electrostatic adsorption power source in the impedance integrator (MB) 3 2 and then supplied to the mounting table. Here, the high frequency of the substrate bias power supply n is -24-(19) (19)1302075 from the mounting table 5 through the crystal holder 34, and is also supplied to the upper surface of the crystal holder. At this time, the crystal holder 34 is a capacitor which is formed of a dielectric material as a dielectric. Fig. 15 shows a capacitor formed by using the capacitor formed as the capacitor c (3 3). First, as shown in Fig. 14, when the thickness of the crystal holder is 5 m m, the adhesion of the deposit is tentatively investigated. As a result, it was found that a large amount of deposits were attached to the upper surface of the crystal seat. Thus, the relationship between the thickness of the crystal holder 34 and the bias voltage occurring on the surface of the crystal holder is theoretically reviewed. The result is shown in Fig. 16. It is understood that when the voltage generated on the inner wall of the vacuum bell jar is about 6 〇 V or more, deposit adhesion can be suppressed. In many experiments, the inventors have set the bias voltage (spike to spike) Vpp during the test to a range of about 400 to 500 V, and in the range of the bias voltage VPP, the surface of the crystal seat is 6 〇 v or more. Voltage ground, 4 mm is selected as the thickness of the crystal seat. Figures 17 and 18 are diagrams for explaining the adhesion of deposits to a thin-walled (e.g., 4 mm thick) crystal holder. As shown in Figure 17, the overall thickness of the crystal holder is 4 mm to test the adhesion of the deposit. As a result, it was confirmed that the surface of the drawing was indicated by an arrow (precipitate adhesion restriction region), and no deposit was attached. This makes it possible to suppress the adhesion of deposits by using a portion directly in contact with the mounting table. However, in the configuration of Fig. 7, the deposit adheres to the outer peripheral portion of the upper surface of the crystal holder, and this is a treatment for obstructing foreign matter to the object to be processed. Then, in addition to the insulating cover 37 formed on the side surface of the mounting table, the mounting table and the crystal holder are contacted on the upper portion of the wafer holder and the entire upper surface of the wafer holder. This configuration is shown in Fig. 18. The structure of the deposited matter was experimentally investigated using the structure shown in Fig. 18 -25-(20) (20)1302075 and the same as above. In this case, there is no deposit of the deposit on the upper surface of the crystal seat which is in contact with the mounting table and the upper side of the crystal seat. However, if it is known that the refilling of the crystal holder is repeated, it is still impossible to sufficiently remove the deposit under the same conditions. On the other hand, when the deposit cannot be sufficiently removed, it is judged that the deposit is deposited with a deviation from the distribution, and particularly on the side of the crystal holder, the deposit is likely to remain. The deposit is distributed in a biased manner, and the reason why the deposit cannot be sufficiently removed is estimated as follows. That is, since the material of the crystal holder is alumina, the thickness is 4 m, and the inductivity is about 8, so once converted into an air layer, it is equivalent to about 0. 5 m m. In this case, the gap is, for example, 0 between the crystal holder and the mounting table.  At 1 mm, the thickness of the dielectric forming the capacitor c of Fig. 15 is the crystal seat portion 〇.  5 m m and the gap portion 0 to 〇.  The total of 1 m m forms a 〇.  5 to 〇.  6 m m (20%) changes. This variation causes a deflection of the high-frequency voltage generated on the surface of the crystal seat, thereby deflecting the one on which the deposit is removed. However, the crystal holder and the mounting table are separated by a gap.  Sealing with an accuracy of 1 mm or less is difficult and impossible to achieve. In order to solve this problem, as shown in Fig. 19, the metal film is sprayed under the crystal holder 34 to form a metal spray film 39. The molten metal is tungsten, but it is known that this is because the adhesion to alumina is good. The metal film is electrically conductive, and if it has good adhesion to the crystal seat, it is not necessarily tungsten, gold, silver, aluminum, copper or the like. The method for producing a metal film is not necessarily a method of forming a film by sputtering, plating, sputtering, evaporation, printing, coating, film bonding, or the like. With this configuration, the metal film can be brought into contact with the mounting table 5 at one place, since the same voltage is generated throughout the metal film and the mounting of -26-(21)(21)1302075, so that the crystal holder can be avoided. The problem of the clearance of the mounting table. As a result of examining the attachment state of the deposit by the experiment using the apparatus configuration of Fig. 9, the adhesion reproducibility of the deposit was poor in the deposit adhesion restriction area indicated by the arrow. The advantage of this method is that even if the metal film and the mounting table are in contact with each other, the entire metal film will generate the same voltage as the mounting table 5, and a high-frequency voltage of a uniform sentence can be generated on the surface of the crystal holder 34. Therefore, as shown in Fig. 20, even in the state in which other structures such as the insulating cover 37 are provided, the melting range of the metal spray film can be enlarged, whereby uniformity can be generated in the crystal seat surface of any range. Frequency voltage. Further, in the configuration of Fig. 20, in the deposit adhesion restriction region indicated by the arrow, it was experimentally confirmed that the reproducibility was good, and the deposit adhesion was removed. From the above results, it has been found that by using a metal film such as metal spray, a high-frequency voltage can be uniformly generated on the surface of the crystal seat, and deposition of deposits can be uniformly suppressed. With this technique, even if the thickness of the crystal holder is required to be thick, the metal film can be buried in the crystal holder, thereby achieving the same effect. What is not constructed is the 21st and 22nd drawings. As shown in the figures, the metal-dissolving film 3 9 is buried at a predetermined depth (about 4 mm in the drawing) from the surface of the crystal holder 34, and the contact mounting table 5 is formed from the metal-dissolving film 39, thereby ensuring Electrical conduction is performed, and the same high-frequency voltage as that of the mounting table 5 is generated in the metal-solubilized film 39. In the mounting table on which the sample 13 is placed, as shown in the figure, in addition to the type in which the electrostatic adsorption film is formed by spraying or the like on the metal mounting table, ceramics such as aluminum nitride or aluminum oxide are used. In the electric-made mounting table, the 'embedded metal electrode' is electrostatically adsorbed from the metal electrode to apply a high-frequency bias -27- (22) 1302075 genus of the genus 3 9 tungsten stack phase 42 into the load-carrying table pole The type of pressure at the end. Even a mounting table of this type can form a crystal seat having exactly the same function by forming a gold film on the crystal seat. This example is shown in Figures 23 and 24. Fig. 23 is a view showing a case where a metal film is formed on the back surface of the crystal holder 34. The mounting table 5 can be made of aluminum nitride, and an electrode for electrostatic adsorption and high-frequency bias application 40 made of tungsten is embedded therein, and a conductive pattern is embedded from the electrode toward the metal-dissolving film 319. , 42, 43), thereby obtaining conduction between the electrode 40 and the metal spray film. Thereby, the metal spray film on the back surface of the crystal holder can generate the same high-frequency voltage as the electrode. Of course, even the attachment control ability to the surface of the crystal holder via the structure is exactly the same as that described so far. Fig. 24 is an example in which the metal-solubilized film 39 is buried in the inside of the crystal holder 34, and the conduction pattern (the crotch-conduction patterns 41, 4 3) described in Fig. 23 is extended, and buried by the contact connection. When the electrode 40 of the stage 5 and the metal film 38 of the buried crystal holder 34 are placed, the functionality is exactly the same as in the case of Fig. 2 . In the case of placing the electrode 5 shown in FIGS. 23 and 24, it is necessary to form the electrostatic adsorption in the inside of the electrode 5 and the high-frequency externally applied electrode 40 to supply the high frequency to the metal spray film 3. The pattern of 9 is not the case of Figure 25. In Fig. 25, the crotch portion conductive pattern 411 in a relationship parallel to the electrostatic adsorption of the tungsten and the high-frequency bias external application electrode 40 is buried in the mounting electrode by the same tungsten film as tungsten. After the embedded tungsten thin films are placed on the electrodes, the holes are formed in the required portions, and the joints are completed by soldering through -28-(23) (23) 1302075. For the bias external application of the crystal holder described so far, when the high-frequency voltage of the mounting table is a certain value (in this example, 400 V), the deposition of deposits on the crystal holder can be suppressed. Moreover, once the voltage of the stage rises and the high-frequency voltage on the crystal holder becomes too high, there is a disadvantage that the crystal holder is reduced and the life of the part is shortened. This disadvantage is solved by introducing a means for adjusting the high-frequency bias voltage applied from the outside to the surface of the crystal seat as shown in Fig. 26. Fig. 26 shows a circuit in which the voltage of the metal film of the crystal holder is adjusted by the externally mounted variable capacitor VC. This is shown in the actual structure and is shown in Fig. 27. The ceramic coating 50 is formed by spraying or the like on the surface of the mounting table connected to the crystal holder portion, and does not directly contact the crystal seating metal spray film 51 and the mounting table 5. The ceramic coating 50 forms the capacitor C shown in Fig. 26, and the mounting table 5 has a function of transmitting a part of the applied high-frequency voltage to the crystal-plated metal-dissolving film 51. In addition, the stage 5 transmits a known high-frequency voltage to the crystal-plated metal-dissolving film 51 by means of another applied variable capacitor VC. The high-frequency voltages transmitted through the two capacitors have the same phase, simply added, and the high-frequency voltage generated on the surface of the crystal seat can be determined according to the voltage. For example, if the thickness of the crystal seat is 4 mm, the surface area of the metallographic film of the crystal seat is 4 〇〇cm, the ceramic film is oxidized and 300 μm, and the maximum capacity of the variable capacitor VC is 800 00 OPf, when the bias voltage of the stage is high, When the voltage is 400V, once the capacity of the variable capacitor VC is changed, the surface voltage of the crystal seat can be changed in the range of about 30 to 1 〇〇V. Thus, the thickness of the crystal seat, the ceramic coating, the surface area of the metal spray film, and the variable capacitor V C are appropriately selected by -29-(24) (24) 1302075 to control the high-frequency voltage generated on the surface of the crystal seat. The crystallographic metal spray film pattern at this time is not shown, but it may be connected to the variable capacitor VC or may be assembled inside the crystal seat. For changing the known bias voltage at the crystal holder, a high-frequency power source different from the high-frequency power source 11 for supplying high frequency to the stage can be used. This is shown in Figure 28. In this case, unlike the substrate bias power supply 11 that supplies a bias voltage to the mounting table, a crystal holder bias power supply 1 1 a for supplying a high frequency to the base metal film can be employed. The electrode configuration in this case is shown in Fig. 29. It is important here that the high-frequency voltage of the known metal-plated film 5 1 is not affected by the high-frequency voltage of the mounting table 5, and is assembled between the mounting table 5 and the crystal-plated metal-dissolving film 51. Insulation and grounding shield (grounding base 36). There is a disadvantage that the crystal holder bias power supply 1 1 a is required, but the bias applied to the crystal holder can be controlled completely independently of the high frequency voltage applied to the sample 13. At this time, the crystal metal spray film 51 is not shown, but may be connected to the crystal seat bias power supply 1 1 a or may be assembled inside the crystal seat. Figure 30 is a diagram illustrating the method of optimizing the voltage of the crystal seat bias voltage. As with the F S V described above, the crystal holder bias voltage is also optimal. This voltage affects the frequency of the bias supply, the material or thickness of the crystal holder, the density of the plasma, the composition of the plasma, the overall composition of the vacuum vessel, and the material, processing speed, and processing area of the sample. Therefore, the optimum voltage of the pad bias voltage needs to be changed in each process. Similarly to the case of Fig. 3, it is indicated that the cell bias voltage is limited to a certain 値 (point b in Fig. 30), and once the cell bias voltage is raised, the luminescence of the crystal material becomes strong. Using the crystal holder bias voltage below point b, the deposit is deposited in the crystal holder. With a paddle of -30-(25) (25)1302075 above b point, the deposit will only be sputtered. Will accumulate, the crystal material itself will also be sputtered. The optimum voltage for the sag bias voltage is the voltage at point b, but there is also a point depending on the process. This is by sputtering of the crystal material, and the crystal material is released in the gas phase, assuming that the processing reaction of the sample or the reaction in the gas phase is staggered, which is equivalent to the inability to carry out the desired process and the like. That is, by setting the terminal bias voltage at point a, it is considered that there is a slight accumulation of deposits in the crystal holder. The crystal material is completely free of sputtering. As a result, the process can be prevented from being blocked due to the release of the crystal holder material. Instead, when the deposit is not fully deposited in the crystal holder, the crystal holder needs to be rinsed with a special process for cleaning (where the 'holder voltage is set higher than point b'). On the other hand, if the crystal seat is slightly attached to the deposit, the target process may not be stably performed due to the occurrence of foreign matter or the like. At this time, it is set to point c at the optimum point of the crystal grid bias voltage, and the crystal holder can be slightly reduced. However, it is also possible to set the condition that no deposit is attached at all. At this time, there is a disadvantage that the crystal seat consumption becomes large, but the advantage of the reduction of the crystal seat rinsing also occurs. Also, when it is desired to reduce the deposit of the crystal holder, the crystal holder bias voltage is set at point b. At this time, it is important to frequently perform the reproducibility of the set voltage of the crystal holder bias voltage. This is because it is necessary to suppress the change in elapsed time when the same process is performed by different devices, or when the same process is continuously performed by the same device. Therefore, the feedback control of the crystal seat bias voltage becomes important. The third and third figures are the base bias bias external circuits corresponding to the feedback control circuits of Figs. 26 and 28, respectively. Together with the two circuits, the -31 - (26) (26) 1302075 voltage of the crystal metal spray film is detected by the damper and the filter 52, and converted into a DC voltage. Thereby, the DC voltage signal becomes a signal with a ratio of the gate bias voltage. By comparing this signal with the preset 値 or setting 设定 set by the method of the main body device control unit 57, etc., the third one is 1. The case of the figure is a motor that controls the rotation of the variable capacitor V C that determines the gate bias voltage. The case of Fig. 3 is to control the output of the crystal seat bias power supply 〖2 & By using this method, the crystal seat bias voltage can be controlled to be controlled in a case where the same process is continuously processed by different devices or the same device set by the main device. The embarrassment, suppresses the gap between devices or changes in time. The above is the area where the control is not carried out or adhered to the deposits, i.e., the vacuum bell 12, the gas discharge port 23, and the crystal holder 34, and the method and structure thereof will be described. The reactive organisms released from the sample 13 or the substances synthesized in the gas phase are limited to volatile components having a high vapor pressure, and these substances are exhausted from the discharge portion or the periphery of the workpiece by the exhaust device, although It is slightly deposited on the lower part of the electrode, the exhaust duct, etc., but it is often exhausted. Moreover, the stacking property is high, that is, the vapor pressure is low, and the adhesion coefficient to the solid is very close to 1 (almost caught when the solid is contacted). The substance becomes a reaction product of the sample, or is synthesized in the gas phase, and the substances are accumulated in the gas. The vacuum vessel wall including the vacuum bell, the crystal holder or the gas discharge port around the sample is hardly exhausted. In such a situation, the substances which are highly deposited will be lost in any place where the deposit is not adhered to the part in the vacuum container. Therefore, the density of the highly accumulating substance in the gas phase becomes high -32-(27) (27)1302075, which becomes the motive force for increasing the accumulation, and as a result, it is forcibly deposited on the vacuum bell or the crystal holder. That is, a vacuum bell jar or a crystal seat is controlled without depositing a deposit, and a place where a large amount of deposits can be accumulated there is prepared, whereby the effect is obtained. Then, the amount of deposits that can be accumulated is increased, or it is quickly accumulated by the gas phase, thereby increasing the stacking amount control ability of the deposit in the vacuum bell or the crystal holder. In other words, it is necessary to provide a region (a deposit trap region) in which a deposit is rapidly and largely accumulated in the gas phase around the object to be treated in which a highly reactive reaction product is generated or in the vicinity of the plasma region. The above-mentioned anti-slip plate functions as a cover for suppressing the deposition of deposits to the gas discharge port, but this is a premise that the deposit itself is accumulated, so this is also a type of trap. Fig. 3 is a view showing an area including a deposit trap in the inside of the vacuum container. First, the vacuum bell area and the wafer (sample)/crystal holder area are areas that are controlled without adhering deposits. The other areas in contact with the plasma are all the deposit trap area, and the accumulation trap area 1 is an area including the area of the anti-plate and the lower part of the gas ring, and can be directly observed by the wafer (visible). The vacuum bell area, the wafer/seat area, and the deposit trap area 1 are all areas that can be directly observed (visible) by the wafer, and are the areas where the electric wave is generated, and are the easiest to be wafers. Or a region of a highly depositing substance formed in the plasma gas phase. When the deposits are accumulated in an uncontrolled state in these areas, the foreign matter piled up in the crystals may be caused, or the elapsed time of the plasma may change. Therefore, in areas where the wafers can be directly observed, it is necessary to adhere to the deposit as much as possible, and -33- (28) (28) 1302075 must be completely controlled. In the present invention, when the structure shown in Figs. 2 and 13 is used for the anti-sliding plate, 1% of the area which can be observed by the wafers is in a state of controlling the deposit. It is also necessary to use the structure of Fig. 6, Fig. 9, and Fig. 1 to control the deposition of 90% or more of the surface area of the region which can be observed by the wafers. .  As mentioned above, the deposit trap area has sufficient function because it can improve the deposit suppressing function in the vacuum bell area or the wafer/seat area, so the surface area of the vacuum bell area or the crystal seat area is minimized. It is desirable to maximize the surface area of the deposit trap area 1. When a highly reactive reactive organism is produced from a wafer, the surface area of the wafer is SW and the surface area S1 of the trap region 1 is S1C0. 5SW, and the reduction of the deposit suppression function in the vacuum bell area or the wafer/crystal holder area is known from experiments by the inventors. Therefore, the rapid accumulation of reactive organisms into the accumulation trap requires s 1 > =0. 5 S 1 relationship, I hope s I > two S 1 is better. The deposit trap area 2 is called a ring cover and is located in the lower part of the deposit trap area ® ♦ 1. This area cannot be seen directly from the wafer, but a large amount of deposits are attached to the upper part of the material due to diffusion. Stack — The trap area 3 is a cover on the side of the electrode. Here, it cannot be seen directly from the crystal. However, similarly to the deposit trap area 2, a large amount of deposit is attached to the upper portion. The deposit trap regions 23 are regions that cannot be directly seen from the wafer, and the deposits attached to the deposits become foreign matter of the wafer, or the possibility of causing the plasma to change over time becomes small, but In addition to the efficient operation of the sweeping operation when the atmosphere is open, it is important that these deposits sink into -34- (29) (29) 1302075. That is, since the reactivity of the reactive organism is strong, 90% or more of the reactive organisms can adhere to the deposit trap region 123 and be recovered. Therefore, the deposit trap regions 123 are exchanged and componentized (recyclable). After the atmosphere is released, the parts are replaced by the cleaned parts, and the inside of the vacuum container can be efficiently scanned. Therefore, the deposit trap requires two conditions that are lightweight and easy to disassemble/install. In order to be lightweight, it is important that the material of the deposit trap is, for example, a lightweight member such as aluminum. % After the atmosphere of the vacuum container is released, the cleaning operation required at the minimum is performed in the order of 2 and 3 from the pile trap 1. Minimum required # The cleaning place to be used is, for example, around the opening for wafer transfer. Thereafter, the exchange kits of the deposited traps after the cleaning are installed in the reverse order, and the vacuum suction can be directly entered. This allows cleaning operations to be carried out in a minimal amount of time. Washing in this order not only shortens the washing time, but also shortens the time required for vacuum suction. The reason is that only the minimum time required for the atmosphere to be opened can be used to minimize the amount of water in the atmosphere that is not vacuumed, and to use the minimum required cleaning solution (pure water or alcohol, etc.). ), the amount of solvent remaining in the vacuum vessel can be minimized. The removed deposit trap 123 is used as an exchange kit for the next atmospheric opening/cleaning operation after washing 6 . The area where the deposit trap can be exchanged for componentization is not necessarily limited to the area shown in Fig. 3 . It will vary depending on the process or material being processed, but it is effective to use all areas where deposits are attached as a deposit trap. For example, in the case where deposits are adhered only to the upper half of the electrode cover, the upper half of the electrode cover is exchanged and matched. Conversely, in the case of straight-35-(30) (30)1302075 to the accumulation of deposits to the exhaust duct, the inner wall of the exhaust duct also acts as a deposit trap area' and becomes very versatile once the components are exchanged. effective. [Effect of the Invention] As described above, by the present invention, since the control is accumulated in a vacuum.  The film is deposited on the inner wall of the container, so that a plasma treatment device and a plasma treatment method with excellent mass production stability can be provided. [Brief Description of Drawings] Fig. 1 is a view showing a plasma processing apparatus according to an embodiment of the present invention. Figure 2 is a diagram showing the Faraday shield. Fig. 3 is a view for explaining a method of optimizing F S V . Fig. 4 is a diagram for explaining the feedback control of the FSV. Fig. 5 is a view showing an example of mounting a Faraday shield for a vacuum bell jar. 〇 Fig. 6 is a view for explaining a mounting structure of the damper plate. Fig. 7 is a view showing an example of heat calculation of the anti-plate. _ Fig. 8 is a view for explaining a support structure of the anti-sliding plate. Fig. 9 is a view for explaining measures against deposits adhering to the inner wall of the vacuum bell jar. Fig. 1 is a view for explaining adhesion of deposits against the near-plate. Fig. 1 is a view showing an example of the structure of the guard plate. -36- (31) (31) 1302075 Fig. 1 2 is a view showing another structural example of the anti-sliding plate. Fig. 13 is a view showing another structural example of the anti-sliding plate. Fig. 14 is a view showing the structure of a sample holding portion including a mounting table. Fig. 15 is a view showing a substrate biasing circuit including a surface of a crystal holder. Figure I6 is a graph illustrating the relationship between the thickness of the crystal holder and the bias voltage occurring on the surface of the crystal holder. Fig. 17 is a view for explaining the state of deposits deposited on a thin-walled crystal seat. Figure 18 is a diagram illustrating the condition of deposits deposited on a thin-walled crystal seat. Fig. 19 is a view showing an example of spraying a metal film under the crystal holder. Fig. 20 is a view showing an example of spraying a metal film under the crystal holder. Fig. 21 is a view showing an example of embedding a metal film in a crystal holder. Fig. 2 is a view showing an example of embedding a metal film in a crystal seat. Fig. 23 is a view showing an example of a crystal holder having a metal film applied to a ceramic dielectric substrate. Fig. 24 is a view showing an example of a crystal holder having a metal film applied to a ceramic dielectric substrate. Figure. Fig. 25 is a view showing a connection structure of an externally applied electrode. Fig. 26 is a view for explaining means for adjusting the high-frequency bias voltage applied to the surface of the crystal seat. Fig. 2 is a view for explaining a structural example of means for adjusting the high-frequency bias voltage applied to the surface of the crystal seat. Fig. 28 is a view for explaining an example of supplying a high frequency bias to the crystal holder using another power source. -37- (32) 1302075 Fig. 29 is a view showing an example of the structure of an electrode when a high frequency bias is applied to the crystal holder using another power source. Fig. 30 is a view for explaining a method of optimizing the crystal pad bias voltage. Fig. 3 is a view for explaining a crystal pad bias external circuit with a feedback circuit. Fig. 3 is a view for explaining a crystal pad bias external circuit with a feedback circuit. Fig. 3 is a view for explaining each region inside the vacuum processing chamber. [Description of the figure] la upper antenna lb lower antenna 2 vacuum processing chamber 3, 32, 32a matching box (integrator) 4 gas ring

4a Gas supply pipe 5 Mounting table 6 Plasma 7 Exhaust device 8 Faraday shield 9 Sample holding unit 10 High-frequency power supply (first high-frequency power supply) 11 Substrate bias power supply (second high-frequency power supply) 1 1 a Crystal holder Pressure source -38 - (33)1302075 12 Vacuum bell 12a Elastomeric conductor 13 Sample 14 Slit 15 Filter 16 Detector 17 Amplifier % Injury 18 Comparator 19 Motor controller 2 0 Body unit control 2 1 Vacuum bell suppression Part 22 Anti-plate 23 Gas outlet 2 4 Flange 3 1 Electrostatic adsorption power supply 3 3 Capacitor 34 Crystal holder 3 5 Insulation base layer 36 Grounding base layer 37 Insulation cover 3 8 Spray film 39 Metal spray film 4 0 Electrostatic adsorption, local frequency Bias external application electrode 41, 42, 43 锷 partial conductive pattern -39- (34)1302075 5 0 ceramic coating 5 1 crystal seat metal spray film 52 damper and filter 5 3 chopper 54 amplifier 5 5 comparator 5 7 Main unit control unit VC1, VC2, VC3 variable capacitor-40-

Claims (1)

13020^5^^„ In the year of X, the repair (2) is replacing the page ____ picking up, applying for the profit - a patent application for the patent application of 92 1 03 792, the amendment of the scope of patent application in the Republic of China, May 23, 1997 What is claimed is: 1. A plasma processing apparatus comprising: a gas ring having a processing gas discharge port and a vacuum bell cover for forming a vacuum processing chamber, and a vacuum bell, and a vacuum chamber; An antenna for supplying a high-frequency electric field to the upper portion of the vacuum bell chamber to generate plasma, a mounting table on which the sample is placed in the vacuum processing chamber, and a space between the antenna and the vacuum bell. a Faraday shield of a high-frequency bias voltage, and an anti-sliding plate that is detachably attached to the inner surface of the gas ring except for the discharge port of the processing gas; and includes a protective plate that can be seen from the sample surface. The area of the inner surface of the gas ring is set to be about 1/2 or more of the sample area. 2. The plasma processing apparatus according to the first aspect of the invention, wherein the anti-slip sheet is provided An opening for flowing the processing gas introduced from the discharge port of the processing gas; the opening is opened at a discharge port of the processing gas at a viewing angle of about 30 degrees. 3. As described in the second item of the patent application. Plasma processing device, 1302075-----, do, cut and repair _ positive replacement -- I丨, 丨-|__丨__义·i....—— | In addition to the above-described viewing angle, the plasma generating space direction is set above the sample except for the above-mentioned sample. 4. The plasma processing apparatus described in the item [Scope] of the patent application, the preventer board is configured. The inner surface of the vacuum bell that corresponds to the Faraday shield non-arrangement surface of the outer surface of the vacuum bell jar. 5. The plasma processing apparatus according to the scope of the patent application, wherein the preventer panel is an insulator The product is disposed on the inner surface of the vacuum bellows of the Faraday shield non-arrangement surface corresponding to the outer surface of the vacuum bell jar. 6. The plasma processing apparatus according to claim 1, wherein the anti-slip plate is Void The utility model is characterized in that it is detachably mounted on the surface of the vacuum bell cover. 7. A plasma processing apparatus, characterized in that: a gas ring which is provided with a discharge port of a processing gas and a cover which is provided with a part of the vacuum processing chamber, and the covering are substantially connected a vacuum bell that forms a vacuum processing chamber on an upper portion of the inner surface of the inner surface of the gas ring, and an antenna that is disposed on an upper portion of the vacuum bell and that supplies a high-frequency electric field to the vacuum processing chamber to generate plasma And a mounting table on which the sample is placed in the vacuum processing chamber, a Faraday shield that is disposed between the antenna and the vacuum bell while providing a high-frequency bias voltage, and at least a discharge port of the processing gas. Freely installed on the inner surface of the gas ring; -2 - I3〇2p§ - -ή ^年月月彡 ie _) is replacing page I....... 丨-(4)丨_ (10)丨.一"--丨.丨丨丨丨4 U|JM1|________ 丨, 11-1 will include the area of the inner surface of the gas ring that can be seen from the surface of the sample surface as the sample area About 1 /2 or more. 8. The plasma processing apparatus according to claim 7, wherein the prevention plate is an inner surface of the vacuum bell that is disposed on the Faraday shield non-arrangement surface slightly corresponding to the outer surface of the vacuum bell. The plasma processing apparatus according to any one of the preceding claims, wherein the Faraday shield is in contact with an outer surface of the vacuum bell jar via a conductive elastomer. The plasma processing apparatus according to claim 9, wherein the high frequency power supply for supplying the high frequency voltage to the Faraday shield is provided with a feedback control circuit for controlling the local frequency voltage to a predetermined frequency. 11. A plasma processing apparatus comprising: a gas ring including a discharge port for processing a gas while forming a part of a vacuum processing chamber; and a vacuum bell cover and a configuration for forming a vacuum processing chamber by covering an upper portion of the gas ring An antenna for supplying a high-frequency electric field to the upper portion of the vacuum bell chamber to generate plasma, a mounting table on which the sample is placed in the vacuum processing chamber, and a space between the antenna and the vacuum bell jar a Faraday shield that imparts a high-frequency bias voltage, and a discharge plate that is detachably attached to the inner surface of the gas ring, at least except for a discharge port of the processing gas, which is visible from the s-type material surface The surface of the inner surface of the air ring of the anti-plate is -3 - the day of the repair (t) is replacing the I product, and the plasma processing apparatus is set to be about 1 / 2 or more of the area of the sample, and is characterized by a dielectric wafer in which the outer surface and the outer surface of the mounting table are covered, and a metal film disposed on the surface side of the wafer, and a high-frequency voltage is applied to the metal film to form the surface of the crystal seat Have a bias voltage. 12. A plasma processing apparatus comprising: a gas ring comprising a vacuum processing chamber and a discharge port having a processing gas; And a vacuum bell that covers the upper portion of the gas ring to form a vacuum processing chamber, and an antenna that is disposed on the upper portion of the vacuum bell and that supplies a high-frequency electric field to the vacuum processing chamber to generate plasma, and is placed in the vacuum processing chamber. a mounting table for the sample, a Faraday shield that is disposed between the antenna and the vacuum bell, and a high-frequency bias voltage, and at least a discharge port of the processing gas, and is detachably attached to the inner surface of the gas ring A plasma processing apparatus that includes an area of the inner surface of the gas ring from which the anti-sliding plate can be seen from the sample surface, and is set to be about 1 / 2 or more of the area of the sample, and is characterized in that A dielectric crystal holder covering the outer surface and the outer surface of the mounting table and a metal film disposed inside the crystal holder, a high-frequency voltage is applied to the metal film, and a bias voltage is obtained on the surface of the crystal holder. 1 3. If you apply for any of the items in the range of items 1 to 1 of the patent scope, -4-J ^ ^ ____ a \f]^^ ) 3 > 修修(戈) is replacing the electricity on the page A processing apparatus in which the foregoing metal film is connected to a conductive portion of a mounting table. A plasma processing apparatus according to any one of the above-mentioned items of the present invention, wherein a crystal holder bias circuit for supplying a crystal holder bias voltage to the crystal holder is provided. . The plasma processing apparatus according to any one of claims 1 to 2, wherein the plasma processing apparatus is provided with a crystal seat bias external circuit for supplying a crystal holder bias voltage to the crystal holder. The external circuit is provided with a pad bias power supply that is independent of a substrate bias power supply that supplies a substrate bias voltage to the mounting table. The plasma processing apparatus according to any one of the items 1 to 2, wherein the crystal holder is provided with a crystal seat bias external circuit for supplying a crystal holder bias voltage. The external circuit is connected between the metal film including the crystal holder and the crystal substrate biasing external circuit via a variable capacitance capacitor. The plasma processing apparatus according to any one of the preceding claims, wherein the cutting table is an insulator product and is internally connected to the crystal holder. The crystal holder of the metal film is biased to the externally applied electrode. 18. A plasma processing method comprising: a gas ring constituting a part of a vacuum processing chamber and further having a discharge port for processing a gas; and a vacuum bell cover forming a vacuum processing chamber on an upper portion of the gas ring. 1302075 __ Guangyue 6曰 repair (3⁄4 positive replacement page; and an antenna disposed on the upper part of the vacuum bell jar and generating a plasma by supplying a local frequency electric field to the above-mentioned true Xinyiyi, and the vacuum processing described above a mounting table for placing a sample in the room, and a Faraday shield for placing a buccal bias voltage between the antenna and the vacuum bell, and a high-frequency power supply circuit for supplying a high-frequency voltage to the antenna and the Faraday shield A plasma processing method for a plasma processing apparatus, characterized in that: the frequency-frequency power supply circuit includes: a high-frequency power source, an antenna connected to the power source, and a series connection to the antenna, and the resonant voltage is used as a high-frequency bias a resonance circuit that supplies a voltage to the Faraday shield, a detection circuit that detects a resonance voltage of the resonance circuit, and a predetermined detection via the detection circuit The comparison of the measured resonance voltage and the comparison of the comparison circuit, the constant of the resonance circuit is changed by the comparison result of the comparison circuit. The setting 値 is set by a sudden increase point of the luminescence spectrum amount of the substance constituting the vacuum bell in the plasma luminescence spectrum with respect to the voltage change supplied to the Faraday shield. 20. A plasma processing method, the use of: A part of the vacuum processing chamber is further provided with a gas ring for processing the discharge port of the hot body, and a vacuum ring for forming a vacuum processing chamber by covering the upper portion of the gas ring. -6-1302 m month b repair ct) positive replacement page and an antenna disposed on the upper portion of the vacuum bell jar and generating plasma for supplying a high-frequency electric field, and a sample placed in the vacuum processing chamber and disposed in the foregoing a Faraday shield for a voltage between the antenna and the vacuum bell, and at least the pre-tested anti-sliding plate mounted on the inner surface of the gas ring, at least in addition to the discharge port of the processing gas, and an outer surface covering the mounting table and a plasma processing method of a plasma processing apparatus for a plasma processing apparatus that obtains a bias voltage source circuit by electrically applying a high-frequency voltage to an inner surface or an inner surface side of the crystal holder, and the local frequency bias power supply circuit is provided There is a detection circuit that supplies an over-variable capacitor to the circuit of the electrode, and a comparison circuit that is previously set to be compared with the detection power setting ,, and the constant of the variable capacitor is further increased by the comparison. 2 1. As described in claim 20, wherein the setting 値 is set in accordance with the sharp increase point of the crystal constituting the crystal seat with respect to the plasma luminescence spectrum. The vacuum processing chamber mounting table is also provided with a high frequency bias, and includes a dielectric electrode having a dielectric material having a top surface area of 1/2 and a high frequency bias voltage for applying a voltage to the electrode. The characteristic is: a comparison result of the way of detecting the voltage detected by the electrode voltage path by the power supply of the U-tube, and the quality of the luminescence spectrum of the voltage change of the electrode of the plasma processing method