TWI368980B - Electrostatic discharge device for pad and method and structure thereof - Google Patents
Electrostatic discharge device for pad and method and structure thereofInfo
- Publication number
- TWI368980B TWI368980B TW095137794A TW95137794A TWI368980B TW I368980 B TWI368980 B TW I368980B TW 095137794 A TW095137794 A TW 095137794A TW 95137794 A TW95137794 A TW 95137794A TW I368980 B TWI368980 B TW I368980B
- Authority
- TW
- Taiwan
- Prior art keywords
- pad
- discharge device
- electrostatic discharge
- electrostatic
- discharge
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
- H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095137794A TWI368980B (en) | 2006-10-13 | 2006-10-13 | Electrostatic discharge device for pad and method and structure thereof |
| US11/902,990 US7911749B2 (en) | 2006-10-13 | 2007-09-27 | Electrostatic discharge protection device for pad and method and structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW095137794A TWI368980B (en) | 2006-10-13 | 2006-10-13 | Electrostatic discharge device for pad and method and structure thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200818446A TW200818446A (en) | 2008-04-16 |
| TWI368980B true TWI368980B (en) | 2012-07-21 |
Family
ID=39302869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095137794A TWI368980B (en) | 2006-10-13 | 2006-10-13 | Electrostatic discharge device for pad and method and structure thereof |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7911749B2 (zh) |
| TW (1) | TWI368980B (zh) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8022498B1 (en) * | 2007-03-26 | 2011-09-20 | Synopsys, Inc. | Electrostatic discharge management apparatus, systems, and methods |
| US7800128B2 (en) | 2008-06-12 | 2010-09-21 | Infineon Technologies Ag | Semiconductor ESD device and method of making same |
| US8693148B2 (en) * | 2009-01-08 | 2014-04-08 | Micron Technology, Inc. | Over-limit electrical condition protection circuits for integrated circuits |
| US8193560B2 (en) * | 2009-06-18 | 2012-06-05 | Freescale Semiconductor, Inc. | Voltage limiting devices |
| US9153570B2 (en) * | 2010-02-25 | 2015-10-06 | Macronix International Co., Ltd. | ESD tolerant I/O pad circuit including a surrounding well |
| US8937823B2 (en) * | 2010-04-08 | 2015-01-20 | Siemens Aktiengesellschaft | Circuit and method for protecting a controllable power switch |
| US8456785B2 (en) * | 2010-10-25 | 2013-06-04 | Infineon Technologies Ag | Semiconductor ESD device and method |
| US8373956B2 (en) * | 2010-11-11 | 2013-02-12 | International Business Machines Corporation | Low leakage electrostatic discharge protection circuit |
| US8436418B2 (en) * | 2011-06-20 | 2013-05-07 | United Microelectronics Corp. | High-voltage semiconductor device with electrostatic discharge protection |
| TWI514573B (zh) * | 2011-06-20 | 2015-12-21 | United Microelectronics Corp | 高壓半導體元件 |
| US8611058B2 (en) | 2011-08-23 | 2013-12-17 | Micron Technology, Inc. | Combination ESD protection circuits and methods |
| US8724268B2 (en) | 2011-08-30 | 2014-05-13 | Micron Technology, Inc. | Over-limit electrical condition protection circuits and methods |
| TWI497684B (zh) * | 2013-01-14 | 2015-08-21 | Macronix Int Co Ltd | 靜電放電保護電路 |
| US9182767B2 (en) | 2013-03-11 | 2015-11-10 | Qualcomm Incorporated | Devices and methods for calibrating and operating a snapback clamp circuit |
| US9281682B2 (en) * | 2013-03-12 | 2016-03-08 | Micron Technology, Inc. | Apparatuses and method for over-voltage event protection |
| US9425188B2 (en) * | 2013-09-26 | 2016-08-23 | Texas Instruments Incorporated | Active ESD protection circuit with blocking diode |
| US9685431B2 (en) * | 2013-09-27 | 2017-06-20 | Sofics Bvba | Semiconductor device for electrostatic discharge protection |
| US9893516B2 (en) | 2015-12-03 | 2018-02-13 | Vanguard International Semiconductor Corporation | ESD protection circuits |
| CN108695313B (zh) * | 2017-03-29 | 2023-03-21 | 意法半导体国际有限公司 | 使用遂穿场效应晶体管和碰撞电离mosfet器件的静电放电保护电路 |
| US10446537B2 (en) * | 2017-06-20 | 2019-10-15 | Texas Instruments Incorporated | Electrostatic discharge devices |
| US11335805B2 (en) | 2019-09-11 | 2022-05-17 | Ememory Technology Inc. | High voltage switch device |
| US11495955B2 (en) * | 2020-02-07 | 2022-11-08 | Arm Limited | Rectifier triggering techniques |
| US12477836B2 (en) * | 2023-12-08 | 2025-11-18 | Analog Devices, Inc. | Low capacitance silicon controlled rectifier topology for overvoltage protection |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US619604A (en) * | 1899-02-14 | Warp stop-motion for looms | ||
| US6947267B2 (en) * | 2001-01-03 | 2005-09-20 | Macronix International Co., Ltd. | RC controlled ESD circuits for mixed-voltage interface |
| TW479342B (en) | 2001-01-05 | 2002-03-11 | Macronix Int Co Ltd | Electrostatic discharge protection circuit of input/output pad |
| JP3983067B2 (ja) * | 2001-03-19 | 2007-09-26 | Ｎｅｃエレクトロニクス株式会社 | 半導体集積回路の静電保護回路 |
| US6628488B2 (en) * | 2001-06-06 | 2003-09-30 | Macronix International Co., Ltd. | Electrostatic discharge protection circuit |
| US6791146B2 (en) | 2002-06-25 | 2004-09-14 | Macronix International Co., Ltd. | Silicon controlled rectifier structure with guard ring controlled circuit |
| CN100421182C (zh) | 2003-02-26 | 2008-09-24 | 旺宏电子股份有限公司 | 高压输入垫的静电放电保护装置及方法 |
| US20050254189A1 (en) * | 2004-05-07 | 2005-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD protection circuit with low parasitic capacitance |
| CN100420014C (zh) | 2004-06-14 | 2008-09-17 | 旺宏电子股份有限公司 | 静电放电保护电路 |
-
2006
- 2006-10-13 TW TW095137794A patent/TWI368980B/zh active
-
2007
- 2007-09-27 US US11/902,990 patent/US7911749B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7911749B2 (en) | 2011-03-22 |
| TW200818446A (en) | 2008-04-16 |
| US20080088994A1 (en) | 2008-04-17 |
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