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TWI220460B - Connector for testing semiconductor device - Google Patents

Connector for testing semiconductor device Download PDF

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Publication number
TWI220460B
TWI220460B TW91117839A TW91117839A TWI220460B TW I220460 B TWI220460 B TW I220460B TW 91117839 A TW91117839 A TW 91117839A TW 91117839 A TW91117839 A TW 91117839A TW I220460 B TWI220460 B TW I220460B
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TW
Taiwan
Prior art keywords
substrate
bump
semiconductor
connector
bumps
Prior art date
Application number
TW91117839A
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Chinese (zh)
Inventor
Yueh-Lung Lin
Ho-Ming Tong
Su Tao
Heng-Lung Su
Yi-Lung Lin
Original Assignee
Advanced Semiconductor Eng
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Priority to TW91117839A priority Critical patent/TWI220460B/en
Application granted granted Critical
Publication of TWI220460B publication Critical patent/TWI220460B/en

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

A connector for testing semiconductor device is disclosed, which mainly comprises a substrate, plural conductive route and plural bonding pads on the substrate, and plural metal bumps on the bonding pad. Plural conductive route are electrically connected to a testing circuit. The testing circuit can apply a testing signal to the semiconductor device. The plural bonding pads are electrically connected to he plural conductive route. The plural metal bumps are designed to form temporary electrical connections with the plural contacts of the semiconductor device.

Description

1220460 五、發明說明(1) 【發明領域】 本發明係有關於一種 於一種用以與半導體元 (interconnect) 〇 【先前技術】 半導體積體電路的製 造、封裝以及測試。測 參數性(parametric) 些方法中,該半導體元 型態測試。雖然封裝係 是半導體製造業者仍經 元件具有合適性質和功 元件的結構日趨複雜化 晶圓型態或晶片型態的 低封裝到無法正常操作 封裝構造的出現,由於 晶片承載件上晶片的其 壞而使整個封裝構造無 費製造成本,因此晶片 一般而言,積體電路 個晶圓一般而言包含50 之積體電路之間係為稱 間,將獨立的積體電路 中,沿著該道標分割晶 半導體元件的測試方法,特別有關 件形成暫時性電性連接的連接器 多個製程 成功能性 造需要 試可分 以及燒機(b u r η - 件可能 為一個 常在封 能之前 ,迫使 裝置進 之元件 每一半 中之一 法正常 或晶圓 係被製 到 1 0 0 0 為道標 分隔開 圓,分 以晶圓、 相對而言 裝之後( )才進行 業者必須 行測試, 的可能。 導體元件 ,卻可能 操作而遭 尺寸的測 ,包含設計、製 (functional)、 in)的方法。在這 晶片或封裝構造的 較昂貴的步驟,但 也就是擔保半導體 測試。隨著半導體 在封裝製程之前對 如此一來,便能 此外,隨著多晶 僅為多個設置在多 因這其中之一有損 到淘太,大大地浪 試在此更為必要。1220460 V. Description of the Invention (1) [Field of the Invention] The present invention relates to a method for interconnecting with semiconductor elements. [Previous Technology] Manufacturing, packaging, and testing of semiconductor integrated circuits. Testing Parametric In these methods, the semiconductor element is type tested. Although the packaging system is a semiconductor manufacturer, the structure of components with suitable properties and functional components is becoming more and more complicated. The wafer type or the low packaging of the wafer type appears to prevent the normal operation of the package structure. Due to the damage of the wafer on the wafer carrier, As a result, the entire package structure has no manufacturing cost. Therefore, in general, chips of integrated circuits are generally referred to as integrated circuits with 50 integrated circuits. Test method for split-crystal semiconductor components, especially related to connectors that form temporary electrical connections. Multiple processes into functional manufacturing require test separability and burn-in (bur η-the device may be a device that is often forced before the device is sealed). Each half of the components that have been advanced is normal or the wafer system is made to 1000. It is divided into circles and divided into wafers. After the wafers are installed relatively, it must be tested by the operator. It is possible. Conductive elements may be manipulated and sized, including design, functional, and in methods. The more expensive steps in this wafer or package construction, but also the warranty semiconductor testing. As semiconductors do this before the packaging process, in addition, as polycrystalline is only set in multiple factors, one of which is detrimental to Amoy, it is even more necessary to test it here.

JT 造於一半導體晶圓上,每 個獨立的 (street 。然後在 離晶圓上 積體電路。晶圓上 indices )的空 一個分割的製程 的獨立積體電路形JT is built on a semiconductor wafer, each of which is independent (street. Then the integrated circuit is separated from the wafer. The indices on the wafer) are separated by an independent integrated circuit of a divided process.

1220460 五、發明說明(2) 成多個晶片。由於晶圓上的獨立積體電路係以陣列的方式 整齊地分佈,因此採用晶圓層次的測試能大幅降低測試的 時間以及花費。 在測試過程中,必須使測試器(pr〇ber)之探測端(pr〇be t^p)暫時與半導體元件上之接點(例如銲墊(b〇n(i pad)或 突塊接點(bumped contact))形成電性連接。為了完成這 個暫時電性連接,目前已發展出多種的連接器 (interconnect),典型用在晶圓級(wafer ievei)的 連接器係為一種測試卡(probe card),其一般包含金屬 探測針(probe needle)形式之探測端。一晶圓操作器 (wafer handler)將晶圓與測試卡對準,然後將探測針與 晶圓電性接觸。接著將測試訊號經由該探測針傳送至晶圓 上的積體電路内。然而,持續的微型化對於前述之測試方 法構成挑戰。隨著半導體元件上之接點密度越來越高°,前 述之測試卡必需具備尺寸更小的探測針。然而,探測 尺寸無法隨著半導體元件的尺寸縮減而無限地減少。 因此需要一種用於測試半導體元件之連接器,其可克服 或至少改善上述問題。 【發明概要】 本發明之目的係提供一種用以與半導體元件形成暫時性 電性連接的連接器,其係利用微影技術 (photo 1 ithographic technology)製造因而可以具有細微 間距(f ine pi tch)以及高度精確配置的探測端(pr〇be tip) 〇1220460 5. Description of the invention (2) Multiple wafers. Because the individual integrated circuits on the wafer are neatly distributed in an array, the use of wafer-level testing can greatly reduce the time and cost of testing. In the test process, the probe end (pr〇be t ^ p) of the tester (pr〇ber) must be temporarily connected to the contact on the semiconductor device (such as a pad (b〇n (i pad) or bump contact) (Bumped contact)) to form an electrical connection. In order to complete this temporary electrical connection, a variety of connectors have been developed. The connector typically used at wafer level is a test card. card), which generally includes a probe end in the form of a probe needle. A wafer handler aligns the wafer with the test card, and then electrically contacts the probe pin to the wafer. Then test The signal is transmitted to the integrated circuit on the wafer through the probe pin. However, continuous miniaturization poses a challenge to the aforementioned test method. As the density of contacts on semiconductor devices becomes higher and higher, the aforementioned test card must be used It has a smaller probe pin. However, the probe size cannot be reduced indefinitely as the size of a semiconductor element is reduced. Therefore, there is a need for a connector for testing a semiconductor element, which can overcome or at least improve the above. [Summary of the Invention] The object of the present invention is to provide a connector for forming a temporary electrical connection with a semiconductor device, which is manufactured using photo 1 ithographic technology so that it can have a fine pitch (fine pi) tch) and a highly accurate configuration probe (pr〇be tip).

00525.ptd !22〇46〇 五、發明說明(3) 根據本發明一實施例之連接器主要包含一基板,複數條 導電線路以及複數個接墊設於該基板上,以及複數個金屬 凸塊設於該接墊上。該基板較佳係利用與半導體元件熱膨 脹係數相近之材料製成,例如玻璃晶圓或矽晶圓。該複數 條導電線路係没什成可與' 測试電路電性連接,該測試電 路可對該半導體元件施以測試訊號。該複數個接墊係電性 連接至該複數條導電線路。該複數個金屬凸塊係設計成可 與该半導體元件之极數個接點形成暫時性的電性連接。該 複數個金屬凸塊可以是金凸塊、焊錫凸塊或以習知打線方 法形成的柱狀突塊(stud bump)。 根據本發明另一實施例之連接器主要包含一基板,複數 條導電線路以及複數個第一接墊設於該基板上,一絕緣層 形成在該基板以及該複數條導電線路上,複數個第二接墊 設於該絕緣層上,以及複數個第一金屬凸塊設於該第一接 塾上以及複數個第二金屬凸塊設於該第二接墊上。該絕 層具有複數個導孔(via)以裸露出該複數個第一接墊。 得注意的是’該第一金屬凸塊之高度大致上等於該絕緣層’ 之厚度加上該第二金屬凸塊之高度,藉此使得該第一金屬 凸塊以及第二金屬凸塊之尖端大致共平面而可與該半導體 兀件之複數個接點形成暫時性的電性連接。該第一金屬凸 塊以及第二金屬凸塊較佳係為以習知打線方法形成的柱狀 突塊(stud bump)。 Ϊ ΐ本發明再一實施例之連接器主要包含一基板,複數 條導電線路設於該基板上以及一絕緣層形成在該基板以及00525.ptd! 22〇46〇 5. Description of the invention (3) A connector according to an embodiment of the present invention mainly includes a substrate, a plurality of conductive lines and a plurality of pads are disposed on the substrate, and a plurality of metal bumps Set on the pad. The substrate is preferably made of a material having a coefficient of thermal expansion similar to that of a semiconductor element, such as a glass wafer or a silicon wafer. The plurality of conductive lines are not electrically connectable to the 'test circuit, and the test circuit can apply a test signal to the semiconductor device. The plurality of pads are electrically connected to the plurality of conductive lines. The plurality of metal bumps are designed to form a temporary electrical connection with a plurality of contacts of the semiconductor element. The plurality of metal bumps may be gold bumps, solder bumps, or stud bumps formed by a conventional wire bonding method. The connector according to another embodiment of the present invention mainly includes a substrate, a plurality of conductive lines and a plurality of first pads are disposed on the substrate, an insulating layer is formed on the substrate and the plurality of conductive lines, and a plurality of first Two pads are disposed on the insulating layer, a plurality of first metal bumps are disposed on the first pad, and a plurality of second metal bumps are disposed on the second pad. The insulation layer has a plurality of vias to expose the plurality of first pads. It should be noted that 'the height of the first metal bump is substantially equal to the thickness of the insulating layer' plus the height of the second metal bump, thereby making the first metal bump and the tip of the second metal bump It is substantially coplanar and can form a temporary electrical connection with a plurality of contacts of the semiconductor element. The first metal bump and the second metal bump are preferably stud bumps formed by a conventional wire bonding method. Ϊ́ ΐ The connector according to another embodiment of the present invention mainly includes a substrate, a plurality of conductive lines are provided on the substrate, and an insulating layer is formed on the substrate and

1220460 五、發明說明(4) 該複數條導電線路上。該絕緣層具有複數個導孔(v i a )以 裸露出該導電線路之一部分。該複數個導孔係為複數個導 孔插塞(v i a p 1 ug )填滿。該導孔插塞上設有複數個第一接 塾。該絕緣層上設有複數個第二接墊。該第一接墊以及第 一接墊上没有複數個金屬凸塊設計成可與該半導體元件之 複數個接點形成暫時性的電性連接。 1根據本發明之連接器係利用微影技術,亦即使用光罩製 造連接器上的探測端(亦即前述之金屬凸塊)及其連接線 路1此製成之連接器可以具有細微間距以及高度精確配 ,的探測端,藉此可克服或至少改善前述先前技術之問 此夕卜 ·當利用玻璃晶圓作為基板製造連接器時,盆係右 ==過程的的定位以及對位。再者,根據本發明: 測端之柱狀突塊受損時,可直接將受精 (二b掉、’/後重新利用打線技術形成新的柱狀突塊· )在根據本發明連接器之基板上 ^ 猎此有效降低成本。 q休列鳊 顯:下:d:t述和ΐ他目w、特徵、和優點能更明 細說明如下:χ明較佳實施例,並配合所附圖示,作詳 【發明說明】 該:ϋυ圖示根據本發明一實施例之連接器100。 ° ,、用以與半導體元件建立暫時性電性連接。1220460 5. Description of the invention (4) The plurality of conductive lines. The insulating layer has a plurality of via holes (v i a) to expose a part of the conductive circuit. The plurality of pilot holes are filled with a plurality of pilot hole plugs (v i a p 1 ug). The pilot hole plug is provided with a plurality of first contacts. The insulating layer is provided with a plurality of second pads. The first pad and the plurality of metal bumps on the first pad are not designed to form temporary electrical connections with the plurality of contacts of the semiconductor device. 1 The connector according to the present invention uses the lithography technology, that is, the photodetector is used to manufacture the detection end (ie, the aforementioned metal bump) on the connector and its connection line. 1 The connector made here can have fine pitch and A highly accurate detection terminal can overcome or at least improve the problems of the foregoing prior art. When using a glass wafer as a substrate to manufacture a connector, the positioning and alignment of the basin is right. Furthermore, according to the present invention: when the cylindrical protrusion at the measuring end is damaged, the fertilization can be directly performed (two b drop, '/ re-use the wire bonding technology to form a new cylindrical protrusion ·) in the connector according to the present invention ^ Hunting this on the substrate effectively reduces costs. q Xiu Lei Xian: Bottom: d: t and other items w, features, and advantages can be described in more detail as follows: χ show the preferred embodiment, and with the accompanying drawings, make a detailed [invention description] The: ϋυ illustrates the connector 100 according to an embodiment of the present invention. °, used to establish a temporary electrical connection with a semiconductor element.

第8頁 1220460 五、發明說明(5) 该連接裔100主要包含一基板11(),複數條導電線路12()以 及複數個接塾1 3 〇 (參見第4圖)設於該基板】丨〇上,以及 f f 5金屬凸塊140設於該接墊13〇上。該基板較佳係利用 ί丰¥體70件熱膨脹係數相近之材料製成,例如玻璃晶圓 晶f。該複數條導電線路120 (為了簡潔起見,第1圖 導電線路120之一部分),係以特定之圖案形成 二、 上 s利用玻璃晶圓作為基板11 0時係有助於在 測試過程的的定位以及對位。 參巧圖’該導電線路12〇較佳係包含一層鉻以及一層 金柄此外,該導電線路120亦可以其他導電性佳之金屬例 =及=鶏或其合金形成。詳細言…先將-層 鉻以及一層金濺鍍至基板110上。接著,將一光阻層利用 習知技術及材料塗覆在該鉻/金 以及顯影UeVelQPing)。如眾所2 成像(lmaglng) 後該鉻/金層之裸露部分會被敍刻而形成該導電i 參見第4圖,該複數個接墊i 3 〇 12〇上之特定部分,而提供表係面可^成在該導電線路 140。該複數個接墊130之位置係^八複數個金屬凸塊 而定。該複數個金屬凸塊14〇之位置至係/塊140所需位置 導體元件之接點而定。根據本發明之八Χ據所欲測試之半 錫凸塊(solder b_)(例如高溫錫i錯合凸:,可:是-銲 00525.ptd 第9頁 1220460Page 8 1220460 V. Description of the invention (5) The connector 100 mainly includes a substrate 11 (), a plurality of conductive lines 12 (), and a plurality of contacts 1 3 0 (see FIG. 4) (located on the substrate) 丨〇, and ff 5 metal bumps 140 are provided on the pad 13. The substrate is preferably made of 70 materials with similar thermal expansion coefficients, such as glass wafer crystal f. The plurality of conductive lines 120 (for the sake of brevity, a portion of the conductive lines 120 in FIG. 1) are formed in a specific pattern. When a glass wafer is used as the substrate 110, it is helpful in the test process. Positioning and alignment. As shown in the figure, the conductive circuit 120 preferably includes a layer of chromium and a gold handle. In addition, the conductive circuit 120 may also be formed of other metals with good conductivity, such as 及 or an alloy thereof. In detail ... First, a layer of chromium and a layer of gold are sputtered onto the substrate 110. Next, a photoresist layer is coated on the chromium / gold and developed using conventional techniques and materials (UeVelQPing). The exposed part of the chrome / gold layer will be engraved to form the conductive i after lmaglng is imaged (see Figure 4). See Figure 4 for specific parts of the plurality of pads i 3 012. The surface may be formed on the conductive line 140. The positions of the plurality of pads 130 are determined by eight or more metal bumps. The positions of the plurality of metal bumps 14 to the desired position of the system / block 140 are determined by the contacts of the conductive elements. According to the eighth of the present invention, half of the solder bumps (solder b_) (such as high-temperature tin i complex bumps :, yes: soldering) 00525.ptd page 9 1220460

5Sn/95Pb 或 3Sn/97Pb,及低溫錫鉛球,如 63Sn/37pb)以 電鍍形成於接墊130上而形成探測端(pr〇be tip)。因此, 本發明之連接件係可直接利用該探測端與半導體元件之接 ,,立短暫性電性連接。根據本發明之金屬凸塊亦可以是 一金凸塊(gold bump)電鍍形成於該接墊13〇上而形成探 測端。該金凸塊一般包含至少九十重量百分比的金,以電 鍍的方式沉積在該接墊130上。此外,根據本發明之金屬 凸塊亦可以利用打線技術形成之柱狀突塊(stud bump)。 首先,利用一打線機在一線(w i r e )之尖端形成一球,將球 利用起g波或熱壓合技術接合至接塾1 3 〇上。然後,將線 斷在球之正上方而製得形成在接墊上的柱狀突塊。 參妝第1圖’導電線路1 2 〇可包含銲墊1 5 〇設在連接器1 〇 〇 之邊緣,或其他位置。銲墊丨50係用以將導電線路12〇利用 線接合、捲帶式自動接合(TAB bonding)或焊接的方式連 接測試電路。5Sn / 95Pb or 3Sn / 97Pb, and low temperature tin-lead balls, such as 63Sn / 37pb) are formed on the pad 130 by electroplating to form a probe tip. Therefore, the connecting member of the present invention can directly use the connection between the detection terminal and the semiconductor element to establish a temporary electrical connection. The metal bump according to the present invention may also be a gold bump plated on the pad 13 to form a detection terminal. The gold bump generally contains at least ninety weight percent gold, and is deposited on the pad 130 by electroplating. In addition, the metal bump according to the present invention may also be a stud bump formed by a wire bonding technique. First, a ball is used to form a ball at the tip of a line (wire), and the ball is joined to the connection 130 using a g-wave or thermocompression technique. Then, the thread was cut directly above the ball to make a columnar bump formed on the pad. The reference image 1 of the reference makeup ′ may include a solder pad 150 placed on the edge of the connector 100 or other positions. The pads 50 are used to connect the conductive circuit 120 to the test circuit by wire bonding, TAB bonding or soldering.

參見第5圖,其圖示根據本發明另一實施例之連接器 200,其主要包含基板11〇,複數條導電線路(未示於^Γ 圖中)以及一絕緣層2 1 0形成在該基板以及該複數條導電 線路上。該基板11 〇上設有複數個接墊丨3 〇。該絕緣層2 i 〇 上設有複數個接墊220。複數個金屬凸塊230設於接墊丨3〇 上以及複數個金屬凸塊2 4 0設於接墊2 2 0上。該絕緣層2 1 〇 具有複數個導孔(v i a) 2 1 0 a以裸露出該複數個接墊丨3 〇。該 金屬凸塊230、240較佳係為以習知打線方法形成的柱狀^ 塊(stud bump)。該金屬凸塊230、240係設計成將線斷在Referring to FIG. 5, which illustrates a connector 200 according to another embodiment of the present invention, the connector 200 mainly includes a substrate 11, a plurality of conductive lines (not shown in the figure), and an insulating layer 2 10 formed on the substrate. A substrate and the plurality of conductive lines. A plurality of pads 3 and 3 are provided on the substrate 11. A plurality of pads 220 are provided on the insulating layer 2 i 〇. A plurality of metal bumps 230 are disposed on the pads 320 and a plurality of metal bumps 2 4 0 are disposed on the pads 2 2 0. The insulating layer 2 1 0 has a plurality of via holes (v i a) 2 1 0 a to expose the plurality of pads 3 0. The metal bumps 230 and 240 are preferably stud bumps formed by a conventional wire bonding method. The metal bumps 230 and 240 are designed to break the wire

1220460 五、發明說明(7) 球正上方不同高度,藉此使得該金屬凸塊230之高度大致 上等於該絕緣層210之厚度加上該金屬凸塊240之高度。這 將使得該金屬凸塊230、240之尖端大致共平面而可與一半 導體元件之複數個接點形成暫時性的電性連接。 參見第6圖,其圖示根據本發明再一實施例之連接器 300 ’其主要包含包含基板11〇,複數條導電線路(未示於 第5圖中)以及一絕緣層2 1 0形成在該基板以及該複數條導 電線路上。連接器30 0之特徵在於該複數個導孔2 1 〇a係為 複數個導孔插塞(v i a p 1 ug) 3 1 0填滿。該導孔插塞3 1 〇上設 有複數個接墊3 2 0。該絕緣層上設有複數個接墊3 3 〇。該接 整3 2 0、3 3 0上設有複數個金屬凸塊1 4 〇設計成可與該半導 體元件之複數個接點形成暫時性的電性連接。 請再參見第1圖,在本實施例中該連接器丨〇〇之尺寸以及 輪廓係對應於一習知的半導體晶圓。然而,根據本發明之 連接器係可設計為一次測試一個晶片或數個晶片的形式。 第2圖及第3圖所示為一晶圓級測試系統(wafer uve test system)400,用以測試半導體晶圓5〇〇上的晶片 510。該測試系統4〇〇包含該連接器1〇〇以及一主體4 1〇 (參見第3圖)。該主體41〇包合式帝从、击从, ,ΟΛ / ▲ α —η 股匕3或私性連接至測試電路 420 (麥見第3圖)用以對晶圓5〇n卜邮人士 h 圆υ u上所含有的積體雷踗妳 以測試訊號。如第2圖所示,一多層帶43〇用以在連接器 100以及測試電路420之間建立電性連接。 俜 似於TAB tape,其包含一聚合物薄層4 以〇仿路類 設於其上。該多層帶㈣可以接合至連接器=塾1220460 5. Description of the invention (7) Different heights directly above the ball, thereby making the height of the metal bump 230 approximately equal to the thickness of the insulating layer 210 plus the height of the metal bump 240. This will allow the tips of the metal bumps 230, 240 to be substantially coplanar, and to form temporary electrical connections with a plurality of contacts of the semi-conducting element. Referring to FIG. 6, it illustrates a connector 300 ′ according to yet another embodiment of the present invention, which mainly includes a substrate 11, a plurality of conductive lines (not shown in FIG. 5), and an insulating layer 2 10 formed on On the substrate and the plurality of conductive lines. The connector 300 is characterized in that the plurality of guide holes 2 1 0a are filled with a plurality of guide hole plugs (v i a p 1 ug) 3 1 0. The guide hole plug 3 1 0 is provided with a plurality of pads 3 2 0. A plurality of pads 3 3 0 are provided on the insulating layer. The joints 3 2 0 and 3 3 are provided with a plurality of metal bumps 1 4 0 designed to form temporary electrical connections with the plurality of contacts of the semiconductor element. Please refer to FIG. 1 again. In this embodiment, the size and contour of the connector correspond to a conventional semiconductor wafer. However, the connector according to the present invention can be designed to test one wafer or several wafers at a time. Figures 2 and 3 show a wafer uve test system 400 for testing a wafer 510 on a semiconductor wafer 500. The test system 400 includes the connector 100 and a main body 4 10 (see FIG. 3). The main body 41 occluded emperor ’s follower, striker, ΟΛ / ▲ α —η dagger 3 or privately connected to the test circuit 420 (see figure 3 in Mai) for the wafer 50n postal person h round The build-ups contained in υ u test you signal. As shown in FIG. 2, a multilayer tape 43 is used to establish an electrical connection between the connector 100 and the test circuit 420.俜 It is similar to TAB tape, which contains a thin polymer layer 4 on it. This multilayer tape ㈣ can be spliced to a connector = 塾

12204601220460

150 (參見第1圖)以及 雜 系統40。設有施力機構44〇 =上應之連接點。該測試 ^i戍稱44〇以及一施力元件442。該施力元 4=Γ;Ϊ”450以及一彈性體材料製成之可壓縮件 ,S亥可壓、缩件460係與該連接器100之背面接觸。 f ^壓縮件460可緩衝對晶圓5〇〇所施加的力量,而允許今 相ST晶圓5〇°平坦化。該測試系統_可包含” :=(未示於圖中)用以支擇以及按照需要移 發明之連 元件之突 之清潔方 粗糙表面 法雖然能 端本身的 後,探測 個連接器 長短不平 為柱狀突 狀突塊因 物磨去。 但多少會 磨的方式 中亦有可 屬凸塊) 金屬凸塊 作為探測 觸數百 係將欲 此將該 器上探 磨去, 越短。 探測端 ,根據 bump) 損或研 根據本發明之連接 造連接器上的探測端 路,因此製成之連接 置的探測端,藉此可 題0 此外,根據本 凸塊)在與受測 清潔。目前使用 一旋轉研磨盤之 這種方 使探測 清潔之 能將一 研磨成 較佳係 端之柱 器係利用微影技術 (亦即前述之金屬 器可以具有細微間 克服或至少改善前 接器上探 塊接點接 法,大致 接觸,藉 清潔連接 材料也被 端會越來 的複數個 均。因此 塊(stud 清潔而磨 ’亦即使用光罩製 凸塊)及其連接線 距以及高度精確配 述先前技術之問 探測端上的淨^兔 測端的污染物, 並且多次利用码 而且在研磨過葙 (亦即前述之名 本發明連接器2 ’藉此當連接器 磨成長短不平友150 (see Figure 1) and miscellaneous system 40. There is a force applying mechanism 44〇 = the connection point on the top. The test is referred to as 44 and a force applying element 442. The force element 4 = Γ; Ϊ "450 and a compressible member made of an elastomer material, and the compressible and shrinkable member 460 is in contact with the back of the connector 100. f ^ The compression member 460 can buffer the wafer The force exerted by 500, which allows the current phase ST wafer to be flattened by 50 °. The test system can include ": = (not shown in the figure) to select and move the connected components of the invention as needed. Although the method of cleaning the rough surface of the protruding side can end itself, the length of the connector is detected as a columnar protruding bump due to physical abrasion. However, there are some bumps in the way of grinding. Metal bumps are used as a probe to touch hundreds of points. The shorter you want to polish the device, the shorter. The detection terminal is damaged according to bump) or the detection terminal circuit on the connector according to the present invention is created. Therefore, the detection terminal of the connection is made, so that the question 0 can be answered. In addition, according to this bump), it is cleaned with the test. . At present, this method using a rotating grinding disc enables the detection and cleaning of a post that can be ground into a better end system by using lithography technology (that is, the aforementioned metal device can be finely overcome or at least improve the front connector Probe block contact method, roughly contacting, by cleaning the connection material will also be more and more uniform. Therefore, the block (stud clean and wear 'that is, using the mask to make bumps) and its connection line spacing and highly accurate Describe the contamination on the probe end of the probe in the prior art, and repeatedly use the code and grind it (that is, the connector 2 of the present invention in the aforementioned name, so as to make the connector grow short and uneven)

次之後,便需要 清潔之探測_與After that, clean detection is needed_and

00525.ptd 第12頁 122046000525.ptd Page 12 1220460

第13頁 1220460 圖式簡單說明 【圖示說明】 第1圖:根據本發明一實施例之連接器概要 (schematic)上視圖; 第2圖:根據本發明一實施例之晶圓級測試系統(waf er level test system)之概要剖視圖; 第3圖:第2圖所示晶圓級測試系統之方塊圖; 第4圖:沿第1圖4-4線之剖視圖; 第5圖:根據本發明另一實施例之連接器部分剖視圖; 以及 第6圖:根據本發明再一實施例之連接器部分剖視圖。 【圖號說明】Page 1212460 Brief description of the drawings [Illustration] Figure 1: A schematic top view of a connector according to an embodiment of the present invention; Figure 2: A wafer-level test system according to an embodiment of the present invention ( Wafer level test system); Figure 3: Block diagram of wafer level test system shown in Figure 2; Figure 4: Sectional view along line 4-4 of Figure 1; Figure 5: According to the present invention A partial sectional view of a connector according to another embodiment; and FIG. 6 is a partial sectional view of a connector according to still another embodiment of the present invention. [Illustration of drawing number]

100 連 接 器 110 基 板 120 導 電 線 路 130 接 墊 140 金 屬 凸 塊 150 銲 墊 200 連 接 器 210 絕 緣 層 210a 導 孔 220 接 墊 230 金 屬 凸 塊 240 金 屬 凸 塊 300 連 接 器 310 導 孔 插 塞 320 接 墊 330 接 墊 400 晶 圓 級 測試系 統 410 主 體 420 測 Ί式 電 路 430 多 層 帶 430a 聚 合 物 薄層 430b 導 電 線 路 440 施 力 機 構 442 施 力 元 件100 connector 110 substrate 120 conductive line 130 pad 140 metal bump 150 solder pad 200 connector 210 insulation 210a via hole 220 pad 230 metal bump 240 metal bump 300 connector 310 via plug 320 pad 330 Pad 400 Wafer-level test system 410 Main body 420 Test circuit 430 Multi-layer tape 430a Polymer thin layer 430b Conductive circuit 440 Force mechanism 442 Force element

00525.ptd 第14頁 1220460 圖式簡單說明 450 壓力板 460 可壓縮件 50 0 半導體晶圓 510 晶片00525.ptd Page 14 1220460 Brief description of drawings 450 Pressure plate 460 Compressible part 50 0 Semiconductor wafer 510 Wafer

00525.ptd 第15頁 III·!00525.ptd Page 15 III!

Claims (1)

J V/ -------- - 修戚i充 L號 91117839 六、申請專利範圍 Λ a 修正 1、一種用於測試半導體元件之 ,該半導體元件具有複數個 建接器(lnterconnect) 一基板(substrate) ; “、、έ,該連接器包含: 複數條導電線路設於該基板 ^ 計成可與一測試電路電性連 』°亥複數條導電線路係設 元件施以測試訊號; ,该測試電路可對該半導體 複數個接墊設於該基板上, 該複數條導電線路;及 °、複數個接墊係電性連接至 複數個凸塊設於該接墊 與 該半導體元件之複數個 #二=數個凸塊係設計成可 要^形成暫時性的電性連接。 2 依申凊專利範圍第 日曰圓(si 1 icon waf 器,其中該基板係為_石3於測試半導體元件之連接 er 凡件之連接 3、依申請專利範圍第丨 器,其中該基板係為一、之用於測試半導體 、马—破螭晶圓(glass wafer)。 4、 依申請專利範圍 器,其中該導電線路人之用於測試半導體元件之連接 —層鉻以及一層金。 5、 依申請專利範圍 器,其中該凸塊係為—乂之用於測試半導體元件之連接 I屬凸塊。 、依申請專利範JV / ---------Repair Qi Charger No. 91117839 6. Scope of Patent Application Λ a Amendment 1. A type for testing semiconductor devices, the semiconductor device has a plurality of lnterconnects-a substrate (Substrate); ",, The connector includes: a plurality of conductive lines provided on the substrate ^ counted to be electrically connected to a test circuit" ° plurality of conductive line system components are provided with test signals; The test circuit may provide a plurality of pads of the semiconductor on the substrate, the plurality of conductive lines; and °, the plurality of pads are electrically connected to a plurality of bumps provided on the pads and the semiconductor elements # 二 = Several bumps are designed to be able to form a temporary electrical connection. 2 According to the scope of the patent application, the first day of the circle (si 1 icon waf device, where the substrate is _3 3 to test semiconductor components Connector er Connection of various parts 3. According to the scope of the patent application, the substrate is one, which is used for testing semiconductors, glass wafers. 4. According to the scope of the patent application, where The The connection of electrical circuit people for testing semiconductor components-a layer of chromium and a layer of gold. 5. According to the scope of the patent application, the bump is-the connection I used to test the semiconductor component I is a bump. According to the patent application Fan 00525.ptc 項之用於測試半導體元件之連接 第16頁 122046000525.ptc for testing the connection of semiconductor components Page 16 1220460 為,其中該金屬凸塊係為由金凸 塊(stud bump)所組成之族群中! A 、于錫凸塊以及柱狀突 出 〇 二-種用於測試半導體^件之連接· ,该半導體元件具有複數個接點,的(lnterc〇nnect) 一基板(substrate); Λ、接裔包含: 複數條導電線路設於該基 計成可與-測試電路電性連 ;;=條導電線路係設 元件施以測試訊號; 邊測減電路可對該半導體 複數個第一接熱# _L 、 性連接至該複數條導電線二^上,^數個第-接墊係電 緣板Γ及該複數條導電線路上,該絕 ★有稷數们V孔(Vla)以裸露出該複數個第一 :數個第二接墊設於該, 電,連接至該複數條導電線路;及 们弟一接墊係 複數個帛—凸塊I於該第 :於該第二接墊上,該第一凸塊之高度大致=二:凸塊 以及第二凸塊係;度並且錢數個第-凸塊 成暫時性的電性連接。…亥半導體兀件之複數個接點形 1220460 修正 j號 911178,¾ ( 曰 六、申請專利範圍 9、依申清專利範圚繁7 器,其㈣板•坡;:=== 器,其中該導丄::Γ含項之二夂於測試半導體元件之連接 峪已3一層鉻以及一層金。 11、依申請專利範圍第7項之 器,其巾該第一凸塊以及$ -凸诗、/=脰:件之連接 bump)。 乐一凸塊係為柱狀突塊(stud 1 2 種用於測試半導體元件之連接哭r . + ,該半導體元件具有複數個接點,:;:i:t:nnect) 一基板(substrate) ; ^連接為匕各· 複數條導電線路設於該基板上, 計成可與一測試電路電性連接 μ稷數條導電線路係設 元件施以測試訊號; ’该挪試電路可對該半導體 一絕緣層形成在該基板以及哕 緣層具有複數個導孔(via)以裸數奴導電線路上,該絕 分; 保路出該導電線路之一部 複數個導孔插塞(v i a Ρ I 埴 、— ^複數個第一接墊設於該導孔插=该稷數個導孔; 係,性連接至該複數條導電線路了上,垓複數個第一接墊 +效數個第二接墊設於該絕緣房 笔性連接至該複數條導電線路y2,該複數個第二接墊係 00525.ptc 第18頁 5& 1220460 案號 91117839 桊 B\曰 修正 六、申請專利範圍 複數個凸塊設於該第一接墊以及第二接墊上,該複數個 凸塊係設計成可與該半導體元件之複數個接點形成暫時性 的電性連接。 1 3、依申請專利範圍第1 2項之用於測試半導體元件之連接 器,其中該基板係為一石夕晶圓(s i 1 i c ο n w a f e r )。 1 4、依申請專利範圍第1 2項之用於測試半導體元件之連接 器,其中該基板係為一玻璃晶圓(g 1 a s s w a f e r)。 1 5、依申請專利範圍第1 2項之用於測試半導體元件之連接 器,其中該導電線路包含一層鉻以及一層金。 1 6 '、依申請專利範圍第1 2項之用於測試半導體元件之連接 器,其中該凸塊係為一金屬凸塊。 1 7、依申請專利範圍第1 6項之用於測試半導體元件之連接 器,其中該金屬凸塊係為由金凸塊、焊錫凸塊以及柱狀突 塊(s tud bump )所組成之族群中選出者。Because the metal bumps are in a group of stud bumps! A. Yu tin bumps and columnar protrusions. Two kinds of connections for testing semiconductor devices. The semiconductor device has a plurality of contacts, and a substrate. Λ, the connector contains : A plurality of conductive lines are provided on the base so that they can be electrically connected to the -test circuit; == the conductive line is provided with components for applying a test signal; the side measurement and subtraction circuit can connect the plurality of first heat-conducting circuits # _L, Is connected to the plurality of conductive wires two, the plurality of-pads are connected to the electrical edge plate Γ and the plurality of conductive wires, and there are several V-holes (Vla) to expose the plurality of conductive wires. First: a plurality of second pads are disposed on the electrical connection to the plurality of conductive lines; and a brother pad is a plurality of 帛 -bumps I on the second: on the second pad, the first The height of a bump is roughly equal to two: the bump and the second bump system; the degree and the number of the first bumps are temporarily connected electrically. … The multiple contact shapes of the Hai semiconductor components 1220460 amended j number 911178, ¾ (the sixth, the scope of application for patents, according to the application of the Qing dynasty patent Fan Qifan 7 devices, the plate • slope;: === 器 , where The guide :: Γ contains two of the terms, which are used to test the connection of the semiconductor device. It has three layers of chromium and one layer of gold. 11. According to the seventh item of the scope of patent application, the first bump and the $-convex poem , / = 脰: connection bump of the pieces). Leyi bumps are columnar bumps (stud 1 2 for testing the connection of semiconductor devices). The semiconductor device has a plurality of contacts :::: i: t: nnect) a substrate ^ Connected as a plurality of conductive lines are provided on the substrate, and are counted to be electrically connectable with a test circuit. A plurality of conductive line system components are provided with a test signal; 'the test circuit can be used for the semiconductor An insulating layer is formed on the substrate and the edge layer having a plurality of vias to conduct conductive lines, and the insulation is separated; the circuit is provided with a plurality of vias plugs (via Pl)埴, — ^ a plurality of first pads are provided in the guide hole insert = the 稷 several guide holes; yes, it is sexually connected to the plurality of conductive lines, 线路 a plurality of first pads + a plurality of second pads The pads are provided in the insulated room and are connected to the plurality of conductive lines y2 in a pen-like manner. The plurality of second pads are 00525.ptc page 18 5 & 1220460 case number 91117839 A bump is provided on the first pad and the second pad, The plurality of bumps are designed to form a temporary electrical connection with the plurality of contacts of the semiconductor element. 1 3. The connector for testing a semiconductor element according to item 12 of the scope of patent application, wherein the substrate is It is a silicon wafer (si 1 ic ο nwafer). 1 4. The connector for testing semiconductor components according to item 12 of the patent application scope, wherein the substrate is a glass wafer (g 1 asswafer). 1 5. The connector for testing semiconductor components according to item 12 of the scope of patent application, wherein the conductive circuit includes a layer of chromium and a layer of gold. 16 ', according to item 12 of the scope of patent application for testing semiconductor components A connector, wherein the bump is a metal bump. 1 7. The connector for testing a semiconductor element according to item 16 of the scope of patent application, wherein the metal bump is a gold bump, a solder bump And those selected from the group consisting of stud bumps. 00525.ptc 第19頁00525.ptc Page 19
TW91117839A 2002-08-06 2002-08-06 Connector for testing semiconductor device TWI220460B (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI399839B (en) * 2009-09-28 2013-06-21 力成科技股份有限公司 Intermediary connector built into semiconductor package construction
TWI401449B (en) * 2008-12-03 2013-07-11 Semiconductor testing system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI401449B (en) * 2008-12-03 2013-07-11 Semiconductor testing system
TWI399839B (en) * 2009-09-28 2013-06-21 力成科技股份有限公司 Intermediary connector built into semiconductor package construction

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