1289959 五、發明說明（3) 核心半寬度之奇數倍。在抗共振反射式波導中僅只基 本模式（mode)在波導核心中具有高的振幅，而在較高 等級的模式還在波導外部區域中具有高的振幅。因此 更高等級模式有效地衰減。以此種配置而產生半導體 雷射其波導核心具有4至8微米m)之寬度。此以所 熟知的半導體雷射所產生之雷射射線之擴散是在側面 方向之4°至8°的區域中。 此所熟知的半導體雷射之缺點爲在垂直方向中從30 °至40°之仍然非常高的擴散。此垂直方向因此被理 解爲所塗佈層磊晶成長之方向。由於此由30°至40° 之高的半値寬度，此非常昂貴的光學裝置只可使用此 由半導體雷射所發射光之80%至90%。 由D. Botez在1999年之應用物理學報74卷3102 至 3104 頁所發表之論文"Design Considerations and analytical approximations for high continuous-wave power，broad waveguide diode laser··而爲熟知 ^ 此光 線擴散可以藉由將波導核心加寬與減少波導核心與相 鄰反射層之折射率之差異而減少。然而’此波導核心 之加寬會造成，經由此波導核心不由傳導基本模式’ 並且在雷射臨界的情況下會達成另外更高模式之傳導 。因此造成雷射射線品質之急劇惡化。此波導核心之 厚度因此在實際上被限制於小於2 // m(微米）。此相對 應於在垂直方向中之射線擴散大於30°之半寬度。還 1289959 五、發明說明（4 ) 有欲減少波導核心與反射層之間折射率之差異在實際 上難以執行。爲了獲得具有半値寬度<2 0。之射線擴散 ’而須要非常高的技術費用來調整非常小折射率差異。 由此習知技術而產生本發明目的之基礎，其說明一 種可容易製成之單模式半導體雷射，其具有光線小的 垂直擴散。 此根據本發明之目的以此方式達成，此波導外部區 域、反射區域與波導核心形成在基板上塗佈之層序列 ，其具有埋入於波導核心中之主動層。 爲了進一步地提高光學輸出功率與改善射線品質， 而在根據本發明之半導體雷射中須選擇層序列，使得 在垂直方向中形成抗共振反射式波導。根據本發明此 被波導核心、反射層區域與外部波導區域各由層所形 成。因此波導核心可以具有大於2微米（// m)之厚度。 因此可以將光線之垂直擴散在基本上減少。尤是具有 3微米厚度之波導核心，在800奈米（nm)的波長範圍 中具有大約18°之完全半値寬度之光線垂直擴散。 此外，藉由波導核心大的厚度，而將光學輸出功率 分配在較大的橫截面上，因此晶體表面之熱負載下降 ，並且可以獲得較高之光學輸出功率。 在根據本發明之半導體雷射中，各個層之間之折射 率差異應選擇高，使得可以有大的製造公差，此外， 此波導核心具有小的折射率，因此通常由具有較大能 1289959 五、發明說明（5) 量缺口之半導體材料所構成，而產生帶電粒子較佳之 攙入，以及減少在晶體表面上藉由加熱之吸收。 本發明其他有利的配置是申請專利範圍附屬項之標 的。 以下是本發明根據圖式作進一步說明。 圖式之簡單說明 第1圖是經由根據本發明半導體雷射之層序列之橫 截面。 第2圖是顯示經由層序列之折射率曲線之圖式。 第3圖是具有基本模式光學強度之曲線之圖式，其 中配置折射率曲線。 第4圖是具有由半導體雷射所發出雷射光之遠距場 強度之曲線之圖式。 第5圖是具有較高等級模式之光強度曲線之圖式， 其中配置折射率曲線。 第1圖顯示經由半導體雷射之橫截面，此基板1具 有折射率爲ηι而由結晶之半導體材料所構成。在基板 1上是具有折射率n2與厚度d2之第一外部波導層2。 此外部波導層2附加配置具有折射率n3與厚度d3之 第一反射層3，在其上連接附加具有折射率n4與厚度 d4之內部波導層4，具有折射率n5與厚度d5之發射光 子主動層5，以及第二內部波導層6。在繼續的順序中 是具有折射率n7與厚度d7之反射層7，具有折射率n8 1289959 五、發明說明（6) 與厚度d8之第二外部波導層8，以及具有折射率η9之 接觸層9。此等層共同形成抗共振式波導10，其中由 內部波導層4與6形成波導核心1 1而將主動層5埋 入。 在第2圖中說明折射率分佈1 2之可能曲線。在實際 上所使用此兩個折射率位準之過渡絕不是變化無常地 進行，而是可以具有斜波形之連續曲線。在基本上用 於抗共振反射式波導1 1之功能是，此等反射層3與7 之折射率n3與n7是大於外部反射層2與8之折射率 n2與n8，以及內部波導層4與6之折射率n4與n6。 因此，此外部邊界層2與8，反射層3與7，以及內部 波導層4與6之折射率可以各自相等。此相等還可以 適用於各自的層厚度，因此產生對於主動層5幾乎對 稱之層序列。 此外，此第一外部與內部波導層2與4之折射率n2 與n4，以及第二內部與外部之波導層6與8之折射率 n6與η8還可以幾乎相等。 須選擇反射層3與7之厚度，使得它形成此在垂直 方向中所投影之基本模式波長之大約四分之一之奇數 倍。若將此等反射層各自成串而作爲Fabry-Perot腔 ，其對應於抗共振腔。通常必須選擇中間邊界層3與 7之厚度d3與d7，使得基本模式之射線損耗爲最小， 此外，此基本模式之光學最大強度應該沿著主動層5 1289959 五、發明說明（8) 之AU.5Gao.5As所構成。最後對於此未摻雜17奈米 (nm)厚的主動層5是使用具有折射率n5 = 3.61之 GaAs〇.5P〇.2 所構成。 第3圖顯示基本模式13之光學強度之所計算出之曲 線，其中配上折射率分佈1 2之曲線。此在第2圖中所 說明之折射率分佈1 2是作爲用於基本模式1 3之抗共 振反射式光學波導，其中反射層3與7之0.5微米（//m) 之厚度是大約對應於此在波導核心1 1中所投射雷射光 波長之四分之三。此基本模式1 3之射線損失大約是 1 /cm 〇 在第4圖說明基本模式1 3之遠距場強度1 4之所計 算出之曲線。此由第4圖之圖式因此顯示雷射射線之 強度分佈爲垂直角度之函數。此雷射射線之完全半寬 度是18.6°。因此，此垂直光線之擴散只是傳統半導 體雷射之垂直光線擴散之大約一半。 第5圖顯示較高等級模式5之光學強度之所計算出 之曲線，其中配置所說明之折射率分佈1 2曲線。如同 在外部波導層2與8中之最大強度上可以看出，比較 高等級之模式1 5在反射層3與7上沒有產生抗共振反 射，藉由此較高等級之模式15在基板1與接觸層9中 之擴展’此較高等級之模式15相較於基本模式13具 有較高的損耗。此較高等級之模式1 5之射線損耗爲 6 0 0 / c m 〇 -10· 1289959 五、發明說明（9) 在本實施例中主動層5是由壓緊之Ga A sP量子膜所 構成，其發出橫向磁場偏極化之光。此主動層5通常 可以由一或多個組成成份爲XY之量子膜所構成，其 中X爲由元素Al、In與Ga所構成之組之至少一個元 素，以及Y是由元素AS、Pn與Sb所構成之組之至少 一個元素。此外此主動層5不但可以被放鬆，而且可 以被壓緊，其導至發出橫向電性偏極化光；或者此主 動層5可以被拉緊，其導致發出橫向磁性偏極化光。 此外此主動層5可以被埋入於由已經提到之材料χγ 所構成之阻障層中。若不使用量子膜，則可以將量子 線或量子點埋入於阻障層中。 此外要說明，此實施例可以在側面的方向中以及沿 著光線傳播的方向在半導體雷射中被隨意的結構化。 與此相應的，它可以藉由此所介紹之層序列而實現抗 共振式波導。而使用於寬帶（Wide-Band)雷射、脈波波 導雷射、具有側面埋入波導結構之雷射、以及具有分 散式回饋（feed-back)(分散式bragg reflector)的雷射中 。因此其優點總是在垂直方向中只有少量的光線擴 散，以及在晶體表面位置上大的光線橫截面。 符號之說明 1 基板 2 外部波導層 3 反射層 -11- 1289959 五、發明說明（10) 4 內 部 波 導 層 5 主 動 層 6 內 部 波 導 層 7 反 射 層 8 外 部 波 導 層 9 接 觸 層 10 抗 共 振 式 波 導 11 波 導 核 心 1 2 折 射 率 分 佈 13 基 本 模 式 14 遠 距 場 強 度 15 較 局 等 級 模 式 -12-1289959 V. Description of invention (3) An odd multiple of the core half width. In the anti-resonant reflective waveguide, only the basic mode has a high amplitude in the waveguide core, and the higher-order mode also has a high amplitude in the outer region of the waveguide. Therefore the higher level mode is effectively attenuated. The semiconductor laser produced in this configuration has a waveguide core having a width of 4 to 8 μm. The diffusion of the laser radiation produced by the well-known semiconductor laser is in the region of 4° to 8° in the lateral direction. A disadvantage of this well-known semiconductor laser is the still very high diffusion from 30 ° to 40 ° in the vertical direction. This vertical direction is thus understood to be the direction in which the coated layer is epitaxially grown. Because of this half-turn width from 30° to 40°, this very expensive optical device can only use 80% to 90% of the light emitted by the semiconductor laser. The paper published by D. Botez in the Journal of Applied Physics, Vol. 74, pp. 3102 to 3104, 1999, is designed to be used for high-speed power, broad waveguide diode laser. It is reduced by widening the waveguide core and reducing the difference in refractive index between the waveguide core and the adjacent reflective layer. However, the widening of this waveguide core results in the conduction of the fundamental mode via this waveguide core and the transmission of additional higher modes in the event of a laser criticality. This causes a sharp deterioration in the quality of the laser beam. The thickness of this waveguide core is thus practically limited to less than 2 // m (microns). This corresponds to a ray spread in the vertical direction that is greater than half the width of 30°. Also 1289959 V. INSTRUCTION DESCRIPTION (4) It is practically difficult to reduce the difference in refractive index between the waveguide core and the reflective layer. In order to obtain a width of half a &< 2 0. The ray diffusion' requires a very high technical cost to adjust for very small refractive index differences. The basis of the object of the invention is thus derived from the prior art which describes an easily fabricated single mode semiconductor laser having a vertical diffusion of light. This is achieved in accordance with the purpose of the invention in that the outer region of the waveguide, the reflective region and the waveguide core form a layer sequence coated on the substrate having an active layer embedded in the waveguide core. In order to further increase the optical output power and improve the ray quality, a layer sequence must be selected in the semiconductor laser according to the invention such that an anti-resonant reflective waveguide is formed in the vertical direction. According to the invention, the waveguide core, the reflective layer region and the outer waveguide region are each formed of a layer. Thus the waveguide core can have a thickness greater than 2 microns (//m). Therefore, the vertical diffusion of light can be substantially reduced. In particular, a waveguide core having a thickness of 3 μm has a vertical diffusion of light having a full half-turn width of about 18° in the wavelength range of 800 nm (nm). Furthermore, by the large thickness of the waveguide core, the optical output power is distributed over a large cross section, so that the thermal load on the crystal surface is lowered, and a higher optical output power can be obtained. In the semiconductor laser according to the present invention, the difference in refractive index between the respective layers should be selected to be high, so that there is a large manufacturing tolerance, and further, the waveguide core has a small refractive index, and thus usually has a larger energy of 1289959 DESCRIPTION OF THE INVENTION (5) The semiconductor material of the notch is formed to produce a preferred intrusion of charged particles and to reduce absorption by heating on the surface of the crystal. Other advantageous configurations of the invention are those of the scope of the patent application. The following is a further description of the invention based on the drawings. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross section through a sequence of layers of a semiconductor laser according to the invention. Figure 2 is a diagram showing the refractive index profile through the layer sequence. Figure 3 is a graph of a curve having a fundamental mode optical intensity in which a refractive index profile is arranged. Fig. 4 is a graph showing a curve of the intensity of the far field of the laser light emitted by the semiconductor laser. Figure 5 is a diagram of a light intensity curve with a higher level mode in which the refractive index profile is configured. Fig. 1 shows a cross section through a semiconductor laser having a refractive index of ηι and composed of a crystalline semiconductor material. On the substrate 1, there is a first outer waveguide layer 2 having a refractive index n2 and a thickness d2. The other waveguide layer 2 is additionally provided with a first reflective layer 3 having a refractive index n3 and a thickness d3, to which an internal waveguide layer 4 having a refractive index n4 and a thickness d4 is attached, and an emission photon active having a refractive index n5 and a thickness d5 is attached thereto. Layer 5, and second inner waveguide layer 6. In the continuation sequence is a reflective layer 7 having a refractive index n7 and a thickness d7, a second outer waveguide layer 8 having a refractive index n8 1289959, a description (6) and a thickness d8, and a contact layer 9 having a refractive index η9. . These layers collectively form an anti-resonant waveguide 10 in which the waveguide core 11 is formed by the inner waveguide layers 4 and 6, and the active layer 5 is buried. A possible curve of the refractive index distribution 1 2 is illustrated in FIG. The transition of the two refractive index levels used in practice is by no means a variability, but can have a continuous curve of oblique waveforms. The function substantially for the anti-resonant reflective waveguide 11 is that the refractive indices n3 and n7 of the reflective layers 3 and 7 are greater than the refractive indices n2 and n8 of the outer reflective layers 2 and 8, and the inner waveguide layer 4 The refractive index of 6 is n4 and n6. Therefore, the refractive indices of the outer boundary layers 2 and 8, the reflective layers 3 and 7, and the inner waveguide layers 4 and 6 may be equal. This equality can also be applied to the respective layer thicknesses, thus producing a layer sequence that is almost symmetrical to the active layer 5. Further, the refractive indices n2 and n4 of the first outer and inner waveguide layers 2 and 4, and the refractive indices n6 and η8 of the second inner and outer waveguide layers 6 and 8 may be almost equal. The thickness of the reflective layers 3 and 7 must be chosen such that it forms an odd multiple of about a quarter of the fundamental mode wavelength projected in the vertical direction. If these reflective layers are each stringed together as a Fabry-Perot cavity, it corresponds to an anti-resonant cavity. It is usually necessary to select the thicknesses d3 and d7 of the intermediate boundary layers 3 and 7 so that the ray loss of the basic mode is minimized. Furthermore, the optical maximum intensity of this basic mode should be along the active layer 5 1289959. AU of the invention description (8). 5Gao.5As is composed. Finally, this undoped 17 nm thick active layer 5 is formed using GaAs 〇.5P 〇.2 having a refractive index of n5 = 3.61. Fig. 3 shows the calculated curve of the optical intensity of the basic mode 13, in which a curve of the refractive index distribution 12 is fitted. The refractive index profile 1 2 illustrated in FIG. 2 is an anti-resonant reflective optical waveguide for the basic mode 13 in which the thickness of the reflective layer 3 and 7 of 0.5 μm (//m) corresponds approximately to This is three-quarters of the wavelength of the projected laser light in the waveguide core 11. The ray loss of this basic mode 13 is approximately 1 / cm 〇 The graph calculated in Fig. 4 illustrating the far field strength of the basic mode 13 is 14 . This is illustrated by the diagram of Fig. 4 thus showing the intensity distribution of the laser ray as a function of the vertical angle. The full half width of this laser beam is 18.6°. Therefore, the diffusion of this vertical ray is only about half of the vertical light diffusion of a conventional semiconductor laser. Figure 5 shows the calculated curve for the optical intensity of the higher level mode 5 in which the illustrated refractive index profile 1 2 curve is configured. As can be seen in the maximum intensity of the outer waveguide layers 2 and 8, the relatively high level mode 15 does not produce anti-resonant reflection on the reflective layers 3 and 7, whereby the higher level mode 15 is on the substrate 1 The extension in the contact layer 9 'this higher level mode 15 has a higher loss than the basic mode 13. The ray loss of this higher level mode 15 is 6,000 / cm 〇 -10 · 1289959 V. Description of the invention (9) In the present embodiment, the active layer 5 is composed of a compacted Ga A sP quantum film. It emits light that is polarized by a transverse magnetic field. The active layer 5 can generally be composed of one or more quantum films having a composition of XY, wherein X is at least one element of the group consisting of elements Al, In and Ga, and Y is composed of elements AS, Pn and Sb At least one element of the group formed. Furthermore, the active layer 5 can be relaxed and can be compressed, which is directed to emit transversely electrically polarized light; or the active layer 5 can be tensioned, which results in the emission of transversely magnetically polarized light. Furthermore, the active layer 5 can be embedded in a barrier layer composed of the material χγ already mentioned. If a quantum film is not used, quantum wires or quantum dots can be buried in the barrier layer. Furthermore, it is to be noted that this embodiment can be arbitrarily structured in the semiconductor laser in the direction of the side and in the direction of propagation of the light. Correspondingly, it is possible to implement an anti-resonant waveguide by means of the layer sequence thus described. It is used in Wide-Band lasers, pulsed waveguide lasers, lasers with side-buried waveguide structures, and lasers with a distributed feed-back (distributed bragg reflector). Therefore, the advantage is always that only a small amount of light is diffused in the vertical direction, and a large cross section of light at the position of the crystal surface. DESCRIPTION OF SYMBOLS 1 Substrate 2 External waveguide layer 3 Reflective layer -11- 1289959 V. Invention description (10) 4 Internal waveguide layer 5 Active layer 6 Internal waveguide layer 7 Reflecting layer 8 External waveguide layer 9 Contact layer 10 Anti-resonant waveguide 11 Waveguide core 1 2 refractive index distribution 13 basic mode 14 remote field strength 15 compared to the local level mode -12-