TWI280078B - Plasma treatment apparatus - Google Patents

Abstract

The present invention provides a plasma treatment apparatus that mainly improves the structure of the upper electrode board within the plasma treatment apparatus. The upper electrode board of the present invention includes an insulation cover plate; a support frame fastened to the bottom of the insulation cover plate to support the insulation cover plate and having a hole; and a gas shower plate formed by insulation materials and fastened in the hole of the support frame and having a plurality of gas holes at its bottom connected to the gas supply system. Since the gas holes are disposed on the gas shower plate formed by the insulation materials, plasma resistance can be enhanced to avoid arcing near the gas holes, thereby preventing defects and increasing yield.

Description

1280078

BACKGROUND OF THE INVENTION The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus that avoids arcing. In the TFT-LCD front-array process, it is often necessary to use a plasma processing device for etching and deposition. For example, a plasma processing apparatus is used to perform etching of an amorphous silicon layer or a polysilicon layer in a TFT. Fig. 1 shows a schematic view of a conventional plasma processing apparatus which includes a process chamber 1 having an upper electrode plate 10 and a lower electrode plate 2 in the cavity 1. The gas supply system 3A and the power source 40 are connected to the upper electrode plate 10, and the power source 4〇 can be a radio frequency (RF). The gas supply system 3 can supply gas into the cavity 1, and the radio wave frequency is used to provide a voltage difference between the upper and lower electrode plates i 〇 , 20 . The material used for the processing chamber 1 is aluminum. The inner surface of the chamber is usually anodized to form an aluminum aluminum film to resist plasma erosion. The lower electrode plate 20 is also typically used as the material 'the surface is anodized. A substrate (e.g., a glass substrate or a slate substrate) S is placed on the lower electrode plate 2 to be etched or deposited using the plasma generated in the cavity 1. Figure 2 shows a bottom view of the upper electrode plate 10, which includes a cross-shaped gas distribution plate (shower plai:e) 12, and an insulating cover plate 14' that covers the gas distribution plate 12, for example, a ceramic cover Ceramic cover. The ceramic cover 14 is generally formed by four ceramic cover plates 14a. Gas distribution plate j 2

0632-8031TWF(n); AU91017B; Cathy Wan.ptd Page 5 1280078 V. INSTRUCTION DESCRIPTION (2) The system a is screwed to each other at the bottom of the joint of the ceramic cover plates 14 to each other. A plurality of gas vents i6 are disposed on the gas distribution plate 12. Referring also to FIG. 1 and FIG. 2, when plasma etching or deposition is performed, the gas is supplied from the gas supply system 30 through the gas pores 16 of the upper electrode plate 10 while the entire chamber 1 is at a suitable low pressure. Gas is supplied into the cavity 1, and the radio wave frequency is activated to apply a voltage difference between the two electrode plates 10 and 20. Thus, these originally neutral gas molecules will be excited and dissociated into various charged ions, radicals, molecules, and electrons. The composition of these particles is called plasma. Some of the particles will be accelerated by the electrical relationship, and the phenomenon of bombardment of the surface of the electrode plate or other contact with it is the phenomenon of ion bombardment of the plasma. The generated plasma is etched or deposited on the substrate 3 placed on the lower electrode plate 2''. :Why should the material in contact with the plasma be made of non-conductor material? After being subjected to long-term strong plasma, the second is strong. Because of the use of the board for a period of time, the use of Mingyang (4) = for example, the above gas distribution line When the electricity is processed, the gas material 'invades the silver with plasma resistance. When in the slurry. Since the gas pores 16 of the gas pores Ϊ6Ϊ= are exposed to the portion where the film gas enters the chamber m at the thinnest portion, and the gas pores 16 are manufactured by the electric nozzles/#/ After a period of time, the surface of the regular meeting will be damaged by Mingyang. After being damaged, the phenomenon of θ1Ε Η and peeling off, the aluminum material will be exposed to the outer layer and the ρ & field will form an arcing. In the following:: The phenomenon of salvage is called the arc discharge product (glass), so the material of the 稞 稞 稞 will fall to the defect, causing serious yield.

1280078 V. INSTRUCTIONS (3) ΐ 导 Ϊ Ϊ Ϊ Ϊ Ϊ Ϊ 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 气体 铭 铭 铭 铭 铭 铭 铭 铭 铭It has a great impact on the yield of the process. Acoustic coupling plasma (inductively_coupled_plasma; icp) f device is a commonly used plasma processing device, can produce high-density plasma L in the ICP processing device, except between the upper and lower electrode plates 1〇 and 2〇 In addition to the potential difference, the upper electrode plate has a higher coil (COH) above the upper electrode plate (COH), which causes the charged ions in the plasma in the cavity 1 to obtain more energy. In addition, the operating pressure of the cavity is usually also controlled to be between 'a few to several tens of gamma rrrr, so that the average growth of the particles' to reduce the collision frequency between the particles; plus the electrode plate 20 for placing the substrate S underneath The applied power is also relatively high. Under the above conditions, the ion bombardment ability in the plasma is made stronger, and the parts in the cavity, such as the gas pores 16 of the gas distribution plate 12, have a more severe arc discharge phenomenon. In view of the above, the object of the present invention is to provide an electrical equipment processing device which can avoid the arc discharge phenomenon caused by ion bombardment of electropolymerization near the gas pores on the gas distribution plate. It can reduce SS short circuit. For the TFT-LCD process, the occurrence of brighten points can be avoided, product defects can be avoided, and yield can be improved. Also, damage to the insulating cover covering the gas distribution plate can be avoided. For the purpose of the present invention, the plasma processing apparatus of the present invention comprises a processing chamber;

1280078

V. Description of the invention (4) The lower electrode plate is located in the processing chamber, and can be placed on one of the substrates to be processed into a plasma; a gas supply system is provided for supplying gas into the processing chamber; An upper electrode plate is located in the processing chamber, above the lower electrode plate, and a power source for applying a voltage difference between the upper and lower electrode plates to convert the gas in the processing chamber into a plasma . The upper electrode plate comprises: an insulating cover; a support frame fixed to the bottom of the insulating cover to support the cover plate and having a hole; and a gas distribution plate formed of an insulating material and fixed at The hole of the support frame has a plurality of gas pores at the bottom thereof, and the gas gas is in communication with the gas supply system, so that gas can be admitted to the processing chamber through the gas pore. A schematic diagram of a plasma processing apparatus in accordance with a preferred embodiment of the present invention is shown in Fig. 3. The plasma processing apparatus includes a processing chamber, a gas supply system 30, and a power source 40. In the body i, there is an upper electrode plate ^ and a lower electrode plate 20 ° T electrode plate 20 can be placed on one of the substrates S to be electropolymerized, such as a semiconductor substrate for semiconductor manufacturing, or tft [a glass substrate for process Or a transparent plastic substrate. The gas supply system 3 can supply gas into the processing chamber 1. The power source 40 can be a radio frequency (RF) for applying a voltage difference between the upper and lower electrode plates 6 and 2〇

1280078 5. Between the invention description (5), to convert the gas in the processing chamber 1 into a plasma. A feature of the invention is that Ray will not. m flute】^, the improvement of the upper electrode plate in the slurry device. Therefore, the difference between the conventional plasma treatment and the plasma treatment device in Fig. 1 is that the difference between the η force and the τ gate A is different. Upper electrode plate. Fig. 4 is a view showing the bottom surface of the upper electrode plate 6 of the present invention. The upper electrode plate 6 includes an insulating cover plate 64, a support frame @62, and a gas distribution plate 66. As shown in Figure 4, the insulating cover 64 is supported by four insulating cover plates 64a = "62 is: glyph" and is located at the joint of the four insulating cover plates, and is fixed at the bottom of the insulating cover 64. To support the insulating cover 64. The frame 62 has a hole 621 which is shown at the center of the hole 62 and is in the shape of a cross. The % fork frame gas distribution plate 66 can also be cross-shaped, just like The ten-shaped shape of the support frame u hole 6 2 1 is matched and fixed in the hole 6 2 j. The gas eight-plate 66 is formed of an insulating material, such as ceramic, and has a plurality of gas holes 661 at the bottom thereof. The gas vent 661 is connected to the gas supply system so that the gas can be supplied to the processing chamber via the gas vents 61. The insulating cover 64 can be formed of ceramic. The support frame 62 can be formed of metal. Preferably, the aluminum anodized film having an anodized surface is used. The present invention uses a special gas distribution plate 66 which is formed of 'insulating material' and fixed in the hole 621 of the support frame 62. > Hole 661 is made of insulating material Upper distribution plate member 66, instead of & like a conventional plasma processing apparatus, gas aperture 16 is located in the anodized film ^

0632-8031TWF(n); AU91017B; Cathy Wan.ptd Page 9 1280078 V. INSTRUCTIONS (6) The gas distribution plate 12 is formed (see Fig. 2). When performing plasma processing,

The process gas enters the processing chamber 1 from the gas vents 61 1 on the insulating gas distribution plate 66. Since the gas distribution plate 66 is made of an insulating material (such as ceramics), it can increase the resistance to plasma. It can withstand the long-term attack of the electric paddle, and the gas distribution plate 66 does not cause bombardment by the plasma at the position of the gas hole 661. damage. Moreover, there is no conventional phenomenon in which the surface of the aluminum anodized film near the gas pores is peeled off, thereby causing arc discharge, and at the same time, the occurrence of S-S short (S-S short) can be reduced. For the TFT-LCD process, the occurrence of brighten points can be avoided, product defects can be avoided, and yield can be improved. Furthermore, the breakage of the insulating cover 64 can also be avoided at the same time. The plasma processing apparatus of the present invention covers various forms of plasma processing apparatus

For example, an inductively coupled plasma (ICP) processing device. The plasma processing apparatus of the present invention can use plasma to deposit or etch, such as plasma-assisted chemical vapor deposition (pECVD; p 1 asmaenhancedchemica 1 va ρ 〇rde ρ 〇siti ο η ), high-density plasma chemical gas High-density CVD (HDPCVD), sputtering, dry etching, etc., and can be used in general semiconductor processes or TFT-LCD front-end array processes.

Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and the present invention can be modified and retouched without departing from the spirit and scope of the present invention. The scope of protection is subject to the definition of the scope of the patent application.

1280078 Simple illustration of the drawing Figure 1 shows a schematic diagram of a conventional plasma processing unit. Figure 2 shows a bottom view of a conventional upper electrode plate. Figure 3 is a schematic view showing a plasma processing apparatus in accordance with a preferred embodiment of the present invention. Fig. 4 is a view showing the bottom surface of the upper electrode plate of the present invention. DESCRIPTION OF REFERENCE NUMERALS 1 to processing chamber, 1 0 to upper electrode plate, 1 2 to gas distribution plate, 1 4 to insulating cover, 14a to insulating cover, 1 6 to gas vent, 2 0 to lower electrode plate, 3 0 ~ gas supply system, 40 ~ power supply, S ~ substrate 6 0 ~ upper electrode plate, 62 ~ support frame, 6 2 1 ~ hole, 64 ~ insulation cover, 6 4 a ~ insulation cover, 6 6 ~ gas distribution Plate, 6 6 1 ~ gas vent.

0632-8031TWF(n); AU91017B; Cathy Wan.ptd Page 11

Claims (1)

1280078 • r_ Case No. 91123112_β年年月月 月 修正 _ Amendment _ 6. Patent scope 1. A plasma processing apparatus, comprising: a processing chamber; a lower electrode plate, located in the processing chamber, on the a substrate for plasma processing; a gas supply system for supplying gas into the processing chamber; an upper electrode plate located in the processing chamber and above the lower electrode plate; and a power source for Applying a voltage difference between the upper and lower electrode plates to convert the gas in the processing chamber into an electric slurry; wherein the upper electrode plate comprises: an insulating cover plate, which is provided by four insulating cover plates a conductive support frame having a cross shape fixed at a bottom joint of the insulating cover to support the insulating cover, the support frame having a cross-shaped hole at the center thereof; and a gas distribution plate made of an insulating material Formed, fixed in the cross-shaped hole of the support frame, and having a plurality of gas pores at the bottom thereof, the gas pores communicating with the gas supply system so that gas can pass through the gas pores Supplied to the processing chamber. 2. The plasma processing apparatus according to claim 1, wherein the insulating cover is formed of ceramic. 3. The plasma processing apparatus of claim 1, wherein the support frame is formed of a metal. 4. The plasma processing apparatus of claim 3, wherein the support frame is formed of aluminum. 0632-8031TWFl(N) ; AU91017B ; Cathy.ptc Page 12 1280078 _ Case No. 91123112 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The surface of the support frame is anodized. 6. The plasma processing apparatus of claim 1, wherein the gas distribution plate is formed of ceramic. 7. The plasma processing apparatus of claim 1, wherein the power source is a radio wave frequency (r a d i 〇 f r e q u e n c y ; R F ). 8. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus is an inductively coupled plasma (ICP) processing apparatus. 0632-8031TWFKN) ; AU91017B ; Cathy.ptc Page 13