TW201916169A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

This substrate processing device is provided with: an adhesion reinforcement unit for supplying an adhesion-reinforcing agent composed of an organic material to one surface of a substrate; an irradiation unit for irradiating the one surface of the substrate to which the adhesion-reinforcing agent has been supplied by the adhesion reinforcement unit with ultraviolet rays; and a film-forming unit for forming a processing film on the one surface of the substrate by supplying a processing agent to the one surface of the substrate that has been irradiated with the ultraviolet rays by the irradiation unit. This substrate processing method comprises: a step where an adhesion-reinforcing agent composed of an organic material is supplied to one surface of a substrate by an adhesion reinforcement unit; a step where the one surface of the substrate where the adhesion-reinforcing agent has been supplied by the adhesion reinforcement unit is irradiated with ultraviolet rays; and a step where a processing film is formed on the one surface of the substrate by supplying a processing agent to the one surface of the substrate that has been irradiated with the ultraviolet rays by the irradiation unit.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate.

In the lithography step in the manufacture of a semiconductor device or the like, a photoresist film is formed on the processed surface of the substrate by coating a photoresist liquid on the processed surface of the substrate. In this case, if the photoresist film is formed in a state where the hydrophilicity of the processed surface of the substrate is high, the adhesion between the processed surface of the substrate and the photoresist film becomes low. Therefore, there is a possibility that the photoresist film is peeled from the processed surface of the substrate. Therefore, before the photoresist film is formed, an adhesion enhancer such as HMDS (hexamethyldisilazane) is supplied to the processed surface of the substrate, thereby improving the hydrophobicity of the processed surface of the substrate (for example, refer to Patent Document 1).

[Patent Document 1] Japanese Patent Laid-Open No. 2005-93952

[Problems to be Solved by the Invention] On the other hand, if the hydrophobicity of the treated surface of the substrate is high, when the photoresist is applied, the photoresist is easily aggregated on the treated surface. Therefore, depending on the type of the photoresist, there may be a case where the photoresist cannot be applied so as to cover a desired area of the treated surface. As a result, a photoresist film cannot be formed properly, and processing failure occurs.

An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of appropriately forming a processing film on one surface of a substrate.

[Technical means to solve the problem] (1) A substrate processing apparatus according to an aspect of the present invention includes: an adhesion-strengthening unit that supplies an adhesion-enhancing agent containing an organic material to one surface of the substrate; One side of the substrate to which the reinforcing agent is supplied in the strengthening section is irradiated with ultraviolet rays; and the film forming section supplies a processing solution to one side of the substrate that has been irradiated with ultraviolet rays by the irradiation section to form a processing film on one side of the substrate.

In this substrate processing apparatus, the hydrophobicity of one surface of the substrate is increased by supplying an adhesion-enhancing agent, and then the hydrophobicity of one surface of the substrate is adjusted by irradiating ultraviolet rays. Thereby, when the processing liquid is applied to one surface of the substrate, the contact angle of the one surface of the substrate with respect to the processing liquid is controlled to an appropriate range. Thereby, the processing liquid can be appropriately applied to a desired area on one surface of the substrate, and the adhesion between the one surface of the substrate and the processing film can be ensured. Therefore, a processing film can be appropriately formed on one surface of the substrate.

(2) The organic material may also include hexamethyldisilazane. In this case, it is possible to suppress an increase in cost and improve the hydrophobicity of one surface of the substrate.

(3) The adhesion-strengthening portion can also supply a adhesion-enhancing agent to one surface of the substrate in such a manner that the hydroxyl group on one surface of the substrate is changed to trimethylsilyloxy, and the portion is irradiated to make the trimethylsilyloxy group on one surface of the substrate. One of the substrates is irradiated with ultraviolet rays by separating into a hydroxyl group and hexamethyldisilazane. In this case, the hydrophobicity of one surface of the substrate can be appropriately adjusted.

(4) The processing liquid may contain a photosensitive material. In this case, a photosensitive film containing a photosensitive material can be appropriately formed on one surface of the substrate.

(5) The irradiation part may adjust the irradiation amount of ultraviolet rays so that the contact angle of one surface of the substrate with respect to the processing liquid becomes a predetermined value or less. In this case, the hydrophobicity of one surface of the substrate can be adjusted to a desired level, so that the treatment liquid can be appropriately coated on one surface of the substrate.

(6) The substrate processing apparatus may further include a cooling section that cools the substrate after the ultraviolet rays are irradiated by the irradiation section and before the processing film is formed by the film forming section. In this case, the temperature of the substrate can be adjusted to a temperature suitable for forming a processing film. Thereby, a processed film can be formed more favorably.

(7) The adhesion-strengthening section may also include a mounting section on which the substrate is placed, and the substrate processing apparatus further includes a transfer section which is arranged to hold the substrate at a transfer position for transferring the substrate to the mounting section. When moving from the transfer position to the external position, the adhesion-strengthening part supplies the adhesion-reinforcing agent to the substrate placed on the placement part, and the irradiation part holds the substrate in the transfer part and moves from the transfer position to the external position. The held substrate is irradiated with ultraviolet rays.

In this case, an adhesion-enhancing agent is supplied to the substrate placed on the placement portion, and the substrate carried from the placement portion is irradiated with ultraviolet rays. As a result, the substrate can be efficiently supplied with the adhesion-reinforcing agent and irradiated with ultraviolet rays, and the productivity can be improved.

(8) A substrate processing method according to another aspect of the present invention includes the steps of: supplying a sealing strengthening agent containing an organic material to one surface of the substrate through the sealing strengthening section; One side of the substrate is irradiated with ultraviolet rays; and one side of the substrate that has been irradiated with ultraviolet rays by the irradiation portion is supplied with a processing solution to form a processing film on one side of the substrate.

According to this substrate processing method, after the hydrophobicity of one surface of the substrate is adjusted by supplying an adhesion reinforcing agent, the hydrophobicity of one surface of the substrate is adjusted by irradiating ultraviolet rays. Thereby, when the processing liquid is applied to one surface of the substrate, the contact angle of the one surface of the substrate with respect to the processing liquid is controlled to an appropriate range. Thereby, the processing liquid can be appropriately applied to a desired area on one surface of the substrate, and the adhesion between the one surface of the substrate and the processing film can be ensured. Therefore, a processing film can be appropriately formed on one surface of the substrate.

(9) The organic material may also include hexamethyldisilazane. In this case, it is possible to suppress an increase in cost and improve the hydrophobicity of one surface of the substrate.

(10) The step of supplying the adhesion-enhancing agent may include changing the hydroxyl group on one surface of the substrate to trimethylsilyloxy, and the step of irradiating ultraviolet rays includes separating the trimethylsilyloxy group on one surface of the substrate into hydroxyl groups Hexamethyldisilazane. In this case, the hydrophobicity of one surface of the substrate can be appropriately adjusted.

(11) The processing liquid may contain a photosensitive material. In this case, a photosensitive film containing a photosensitive material can be appropriately formed on one surface of the substrate.

(12) The step of irradiating ultraviolet rays may include adjusting the irradiation amount of ultraviolet rays so that the contact angle of one surface of the substrate with respect to the processing liquid becomes a predetermined value or less. In this case, the hydrophobicity of one surface of the substrate can be adjusted to a desired level, so that the treatment liquid can be appropriately coated on one surface of the substrate.

(13) The substrate processing method may further include a step of cooling the substrate after the step of irradiating ultraviolet rays and before the step of forming a processing film. In this case, the temperature of the substrate can be adjusted to a temperature suitable for forming a processing film. Thereby, a processed film can be formed more favorably.

(14) The substrate transfer method may further include the steps of holding the substrate by the transfer unit while placing the transfer unit at a transfer position on the placement portion used to transfer the substrate to the tightly reinforced portion and an external position away from the transfer position. The step of supplying the adhesion-enhancing agent includes moving the substrate to the placement section. The step of irradiating ultraviolet rays includes the step of holding the substrate by the transporting section and moving it from the transfer position to an external position. The substrate is irradiated with ultraviolet rays.

[Effects of the Invention] According to the present invention, a processing film can be appropriately formed on one surface of a substrate.

Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description, a substrate refers to a substrate for an FPD (Flat Panel Display) such as a semiconductor substrate, a liquid crystal display device, or an organic EL (Electro Luminescence) display device, a substrate for an optical disk, or a disk. Substrates, substrates for magneto-optical disks, substrates for photomasks, substrates for solar cells, and the like.

[1] Structure of substrate processing apparatus FIG. 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. In the drawings after FIG. 1 and FIG. 2, arrows indicating X directions, Y directions, and Z directions that are orthogonal to each other are marked in order to clarify the positional relationship. The X and Y directions are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction.

As shown in FIG. 1, the substrate processing apparatus 100 includes a loading block 11, a first processing block 12, a second processing block 13, a washing and drying processing block 14A, and a loading / unloading block 14B. The interface block 14 is constituted by washing and drying the processing block 14A and carrying in and out of the block 14B. The exposure device 15 is arranged so as to be adjacent to the carry-in / out block 14B. In the exposure apparatus 15 of this example, the substrate W is subjected to exposure processing by a liquid immersion method.

As shown in FIG. 1, the loading block 11 includes a plurality of carrier placement units 111 and a transport unit 112. On each carrier mounting portion 111, a carrier 113 that stores a plurality of substrates W in a plurality of stages is placed. The transfer unit 112 is provided with a main control unit 114 and a transfer mechanism 115. The main control unit 114 controls various components of the substrate processing apparatus 100.

The first processing block 12 includes a coating processing unit 121, a transfer unit 122, and a heat treatment unit 123. The coating treatment section 121 and the heat treatment section 123 are provided so as to face each other with the conveyance section 122 interposed therebetween. The second processing block 13 includes a development processing section 131, a transport section 132, and a heat treatment section 133. The development processing section 131 and the heat treatment section 133 are provided so as to face each other with the conveyance section 132 interposed therebetween.

The washing and drying processing block 14A includes washing and drying processing sections 161 and 162 and a transport section 163. The washing and drying processing sections 161 and 162 are provided so as to face each other across the conveying section 163. The transfer unit 163 is provided with transfer mechanisms 141 and 142. A transfer mechanism 146 is provided in the carry-in / out block 14B. The exposure device 15 is provided with a substrate carrying-in portion 15 a for carrying in the substrate W and a substrate carrying-out portion 15 b for carrying out the substrate W.

FIG. 2 is a schematic side view mainly showing the substrate processing apparatus 100 of the coating processing section 121, the development processing section 131, and the washing and drying processing section 161 of FIG. As shown in FIG. 2, the coating processing units 121 are provided with coating processing chambers 21, 22, 23, and 24 in stages. A coating processing unit (spin coater) 129 is provided in each of the coating processing chambers 21 to 24. The development processing unit 131 is provided with development processing chambers 31, 32, 33, and 34 in stages. A developing processing unit (rotary developing machine) 139 is provided in each of the developing processing chambers 31 to 34.

Each coating processing unit 129 includes a rotary chuck 25 holding a substrate W and a cover 27 provided so as to cover the periphery of the rotary chuck 25. In this embodiment, two sets of the rotary chuck 25 and the shield 27 are provided in each coating processing unit 129.

In the coating processing unit 129, the rotary chuck 25 is rotated by a driving device (not shown), and any one of the plurality of processing liquid nozzles 28 is moved above the substrate W by the nozzle transfer mechanism 29. The processing liquid is ejected from the processing liquid nozzle 28. In this example, a photoresist liquid containing a photosensitive material is used as the processing liquid. A photoresist film is formed on the substrate W by coating a photoresist liquid on the processed surface of the substrate W.

The development processing unit 139 includes a spin chuck 35 and a shield 37 similarly to the coating processing unit 129. As shown in FIG. 1, the developing processing unit 139 includes two developing nozzles 38 that eject the developing solution, and a moving mechanism 39 that moves the developing nozzle 38 in the X direction.

In the developing processing unit 139, a rotary chuck 35 is rotated by a driving device (not shown), and one developing nozzle 38 is supplied with a developing solution to each substrate W while moving in the X direction, and then the other is developed The nozzle 38 supplies a developing solution to each substrate W while moving. In this case, the developing process of the substrate W is performed by supplying a developing solution to the substrate W.

Washing and drying processing sections 161 are provided with washing and drying processing chambers 81, 82, 83, and 84 in stages. A washing and drying processing unit SD1 is provided in each of the washing and drying processing chambers 81 to 84. In the cleaning and drying processing unit SD1, the cleaning and drying processing of the substrate W before the exposure processing is performed.

FIG. 3 is a schematic side view of the substrate processing apparatus 100 mainly showing the heat treatment sections 123 and 133 and the washing and drying processing section 162 of FIG. 1. As shown in FIG. 3, the heat treatment section 123 includes an upper heat treatment section 301 and a lower heat treatment section 302. Each of the upper heat treatment section 301 and the lower heat treatment section 302 is provided with a plurality of heating units PHP, a plurality of tightly-enhanced processing units AHP, a plurality of cooling units CP, and a full exposure processing unit OWE.

In the heating unit PHP, the substrate W is heated. In the cooling unit CP, the substrate W is cooled. In the adhesion-strengthening processing unit AHP, the substrate W is subjected to the adhesion-strengthening treatment. In the full exposure processing unit OWE, a full exposure process is performed on the substrate W. Details of the close-intensification processing and the full exposure processing will be described below.

The heat treatment section 133 includes an upper heat treatment section 303 and a lower heat treatment section 304. Each of the upper heat treatment section 303 and the lower heat treatment section 304 is provided with a cooling unit CP, a plurality of heating units PHP, and an edge exposure unit EEW.

In the edge exposure portion EEW, an exposure process (edge exposure process) is performed on a fixed-width area of the peripheral portion of the photoresist film formed on the substrate W. In the upper heat treatment section 303 and the lower heat treatment section 304, a heating unit PHP provided adjacent to the washing and drying processing block 14A is configured to be carried into the substrate W from the washing and drying processing block 14A.

The washing and drying processing section 162 is provided with washing and drying processing chambers 91, 92, 93, 94, and 95 in stages. A washing and drying processing unit SD2 is provided in each of the washing and drying processing chambers 91 to 95. In the cleaning and drying processing unit SD2, the substrate W after the exposure processing is cleaned and dried.

FIG. 4 is a schematic side view mainly showing the conveying sections 122, 132, and 163 of FIG. 1. FIG. As shown in FIG. 4, the transfer unit 122 includes an upper transfer chamber 125 and a lower transfer chamber 126. The transfer unit 132 includes an upper transfer chamber 135 and a lower transfer chamber 136. A transfer mechanism (transfer robot) 127 is provided in the upper transfer chamber 125, and a transfer mechanism 128 is provided in the lower transfer chamber 126. A transfer mechanism 137 is provided in the upper transfer chamber 135, and a transfer mechanism 138 is provided in the lower transfer chamber 136. Each of the transport mechanisms 127, 128, 137, and 138 includes robot hands H1 and H2 for holding the substrate W. The transfer mechanism 115 transfers the substrate W while holding the substrate W by the robot hands H1 and H2.

Between the transfer section 112 and the upper transfer chamber 125, substrate mounting sections PASS1 and PASS2 are provided, and between the transfer section 112 and the lower transfer chamber 126, substrate mounting sections PASS3 and PASS4 are provided. Between the upper transfer chamber 125 and the upper transfer chamber 135, substrate mounting sections PASS5 and PASS6 are provided, and between the lower transfer chamber 126 and the lower transfer chamber 136, substrate mounting sections PASS7 and PASS8 are provided.

Between the upper transfer chamber 135 and the transfer unit 163, a placement and buffer unit P-BF1 is provided, and between the lower transfer chamber 136 and the transfer unit 163, a placement and buffer unit P-BF2 is provided. In the transfer section 163, a substrate mounting section PASS9 and a plurality of mounting and cooling sections P-CP are provided so as to be adjacent to the loading / unloading block 14B.

The operation of the substrate processing apparatus 100 will be described with reference to FIGS. 1 to 4. A carrier 113 containing an unprocessed substrate W is placed on the carrier mounting portion 111 (FIG. 1) of the loading block 11. The transport mechanism 115 transports the unprocessed substrate W from the carrier 113 to the substrate mounting portions PASS1 and PASS3 (FIG. 4). In addition, the transfer mechanism 115 transfers the processed substrate W placed on the substrate mounting sections PASS2 and PASS4 (FIG. 4) to the carrier 113.

In the first processing block 12, the conveying mechanism 127 (FIG. 4) sequentially conveys the substrate W placed on the substrate placing section PASS1 to the close-enhancement processing unit AHP (FIG. 3) and the full exposure processing unit OWE (FIG. 3). ) And the cooling unit CP (FIG. 3), and further, this substrate W is transferred to any one of the coating processing chambers 21 and 22 (FIG. 2). In addition, the transfer mechanism 127 sequentially transfers the substrate W on which the photoresist film has been formed in the coating processing chamber 21 or the coating processing chamber 22 to the heating unit PHP (FIG. 3) and the substrate mounting portion PASS5 (FIG. 4).

In this case, after the substrate W is subjected to the adhesion enhancement processing in the adhesion enhancement processing unit AHP, the substrate W is subjected to the overall exposure processing in the full exposure processing unit OWE. Then, in the cooling unit CP, the substrate W is cooled to a temperature suitable for forming an anti-reflection film, and then in any one of the coating processing chambers 21 and 22, the substrate W is coated by the coating processing unit 129 (FIG. 2). A photoresist film is formed thereon. Thereafter, the substrate W is heat-treated in the heating unit PHP, and the substrate W is placed on the substrate placing portion PASS5.

In addition, the transfer mechanism 127 transfers the substrate W after the development processing placed on the substrate mounting portion PASS6 (FIG. 4) to the substrate mounting portion PASS2 (FIG. 4).

The transfer mechanism 128 (Figure 4) sequentially transfers the substrate W placed on the substrate mounting section PASS3 to the close-intensification processing unit AHP (Figure 3), the full exposure processing unit OWE (Figure 3), and the cooling unit CP (Figure 3). The substrate W is further transferred to any one of the coating processing chambers 23 and 24 (FIG. 2). In addition, the transfer mechanism 128 sequentially transfers the substrate W formed with the photoresist film in the coating processing chamber 23 or the coating processing chamber 24 to the heating unit PHP (FIG. 3) and the substrate mounting portion PASS7 (FIG. 4).

The transfer mechanism 128 (FIG. 4) transfers the substrate W after the development process placed on the substrate mounting portion PASS8 (FIG. 4) to the substrate mounting portion PASS4 (FIG. 4). The processing contents of the substrate W in the coating processing chambers 23 and 24 (Figure 2) and the lower stage heat treatment section 302 (Figure 3) are the same as those in the coating processing chambers 21 and 22 (Figure 2) and the upper stage heat treatment section 301 (Figure 3). The processing content of the substrate W is the same.

In the second processing block 13, the transfer mechanism 137 (FIG. 4) sequentially transfers the substrate W formed by the photoresist film placed on the substrate mounting portion PASS5 to the edge exposure portion EEW (FIG. 3) and the placement and The buffer portion P-BF1 (Fig. 4). In this case, in the edge exposure portion EEW, after performing the edge exposure processing on the substrate W, the substrate W is placed on the placement and buffer portion P-BF1.

In addition, the conveyance mechanism 137 (FIG. 4) takes out the substrate W after the exposure processing by the exposure device 15 and the heat treatment from the heating unit PHP (FIG. 3) adjacent to the cleaning and drying processing block 14A. The transfer mechanism 137 transfers the substrate W to the cooling unit CP (FIG. 3), and then transfers it to any one of the processing chambers 31 and 32 (FIG. 2), and then sequentially transfers the substrate W to the heating unit PHP (FIG. 3). ) And the substrate mounting portion PASS6 (Figure 4).

In this case, after the substrate W is cooled to a temperature suitable for the development processing in the cooling unit CP, the development processing unit 139 performs the development processing of the substrate W in the development processing chamber 31 or the development processing chamber 32. Thereafter, the substrate W is heat-treated in the heating unit PHP, and the substrate W is placed on the substrate placing portion PASS6.

The transfer mechanism 138 (FIG. 4) sequentially transfers the substrate W formed by the photoresist film placed on the substrate placement portion PASS7 to the edge exposure portion EEW (FIG. 3) and the placement and buffer portion P-BF2 (FIG. 4). . In addition, the conveyance mechanism 138 (FIG. 4) takes out the substrate W after the exposure processing by the exposure device 15 and the heat treatment from the heating unit PHP (FIG. 3) adjacent to the cleaning and drying processing block 14A. The transfer mechanism 138 transfers the substrate W to the cooling unit CP (FIG. 3), and then transfers it to any one of the processing chambers 33 and 34 (FIG. 2), and then sequentially transfers the substrate W to the heating unit PHP (FIG. 3) ) And the substrate mounting portion PASS8 (Figure 4). The processing contents of the substrate W in the development processing chambers 33 and 34 and the lower-stage heat treatment section 304 are the same as those of the substrate W in the development processing chambers 31 and 32 (FIG. 2) and the upper-stage heat treatment section 303 (FIG. 3).

In the cleaning and drying processing block 14A, the transfer mechanism 141 (FIG. 1) transfers the substrate W placed on the placement and buffer sections P-BF1 and P-BF2 (FIG. 4) to the cleaning and drying processing section 161 for cleaning. Clean drying processing unit SD1 (Figure 2). Next, the transfer mechanism 141 transfers the substrate W from the cleaning and drying processing unit SD1 to the placement and cooling section P-CP (FIG. 4). In this case, after washing and drying the substrate W in the washing and drying processing unit SD1, the substrate W is cooled to a suitable exposure device 15 (FIG. 1) in the placement and cooling section P-CP. The temperature of the exposure process.

The conveyance mechanism 142 (FIG. 1) conveys the substrate W after the exposure processing placed on the substrate placing section PASS9 (FIG. 4) to the cleaning and drying processing unit SD2 (FIG. 3) of the cleaning and drying processing section 162. The transfer mechanism 142 transfers the cleaned and dried substrate W from the cleaning and drying processing unit SD2 to the heating unit PHP (FIG. 3) of the upper heat treatment unit 303 or the heating unit PHP (FIG. 3) of the lower heat treatment unit 304. In this case, after washing and drying the substrate W in the washing and drying processing unit SD2, a post-exposure baking (PEB) process is performed in the heating unit PHP.

In the loading / unloading block 14B, the transfer mechanism 146 (FIG. 1) transfers the substrate W before the exposure processing placed on the placement and cooling section P-CP (FIG. 4) to the substrate transfer portion 15 a (FIG. 1). In addition, the transfer mechanism 146 (FIG. 1) takes out the exposed substrate W from the substrate carrying-out portion 15 b (FIG. 1) of the exposure device 15, and transfers the substrate W to the substrate mounting portion PASS9 (FIG. 4).

[2] Adhesive enhancement processing and full exposure processing As described above, in this embodiment, after the substrate W is adhered and enhanced in the adhesion enhanced processing unit AHP, the substrate W is fully exposed in the full exposure processing unit OWE. . Thereafter, a photoresist film is formed on the processed surface of the substrate W by the coating processing unit 129.

In the adhesion-strengthening treatment, an adhesion-reinforcing agent containing an organic material is supplied to the processed surface of the substrate W. As the organic material, for example, HMDS (hexamethyldisilazane) is used. In this case, by increasing the hydrophobicity of the processed surface of the substrate W, the adhesion between the processed surface of the substrate W and the photoresist film is improved.

On the other hand, in order to appropriately form a photoresist film, it is necessary to apply a photoresist liquid so as to cover a desired area (for example, the entire surface to be processed) of the processing surface of the substrate W. However, the higher the hydrophobicity of the processed surface of the substrate W, the larger the contact angle of the processed surface with respect to the photoresist liquid. If the contact angle with the photoresist liquid is too large, the photoresist liquid may not be coated on the portion to be treated where the photoresist liquid is to be applied because the photoresist liquid aggregates on the surface to be treated. This is hereinafter referred to as "defective coating". Especially in the case of using a photoresist with high cohesiveness, such coating defects are liable to occur. In this case, a photoresist film cannot be properly formed on the surface to be processed.

Therefore, in this embodiment, a full exposure process is performed after the adhesion strengthening process and before the photoresist solution is applied. In the full exposure process, the entire surface of the substrate W to be processed is irradiated with ultraviolet rays. Thereby, the hydrophobicity of the processed surface of the substrate W can be adjusted.

The reason why the hydrophobicity of the treated surface of the substrate W is reduced by the irradiation of ultraviolet rays is considered as follows. FIG. 5 is a diagram for explaining the change in the hydrophobicity of the treated surface of the substrate W caused by the adhesion-enhancing process and the full-exposure process.

The chemical formula of HMDS is shown in FIG. 5 (a). FIG. 5 (b) shows the chemical change on the treated surface of the substrate W due to the adhesion strengthening treatment. FIG. 5 (c) shows the chemical change on the treated surface of the substrate W due to the full exposure process. In this example, the substrate W is a semiconductor substrate.

As shown in FIG. 5 (b), a large number of hydroxyl groups (-OH) are present on the treated surface of the substrate W before the adhesion strengthening treatment. When the HMDS is supplied to the processed surface of the substrate W by the adhesion strengthening treatment, the HMDS reacts with a part of the hydroxyl groups (-OH). Thereby, a hydroxyl group (-OH) becomes a trimethylsilyloxy group (-OSi (CH ₃ ) ₃ ). As a result, the hydrophobicity of the processed surface of the substrate W is improved.

As shown in Fig. 5 (c), when the treated surface of the substrate W is irradiated with ultraviolet rays by a full exposure process, water vapor (H ₂ O) in the environment and a part of trimethylsiloxy (-OSi (CH _{3 3} ) A reaction occurs. Thereby, trimethylsilyloxy (-OSi (CH ₃ ) ₃ ) is separated into hydroxyl (-OH) and hexamethyldisilaxane (O [Si (CH ₃ ) ₃ ] ₂ ). As a result, the hydrophobicity of the processed surface of the substrate W is reduced.

In the adhesion-reinforcing treatment, even if the supply amount of the adhesion-reinforcing agent is small, the hydrophobicity of the treated surface of the substrate W will be rapidly increased. Therefore, it is extremely difficult to adjust the hydrophobicity of the processed surface of the substrate W to a desired level during the adhesion strengthening treatment. On the other hand, in the overall exposure processing, the hydrophobicity of the processed surface of the substrate W is reduced depending on the irradiation amount (exposure amount of the processed surface) of the ultraviolet rays to the processed surface of the substrate W. Therefore, the hydrophobicity of the treated surface of the substrate W can be adjusted to a desired level by adjusting the irradiation amount of ultraviolet rays. In this case, it is preferable to adjust the irradiation amount of ultraviolet rays so that the contact angle of the processed surface of the substrate W with the photoresist liquid becomes a predetermined range.

The inventors investigated the change in the hydrophobicity of the treated surface of the substrate W in the case of performing only the adhesion-enhancing treatment and in the case of performing both the adhesion-enhancing treatment and the full exposure treatment. Here, the contact angle of the processed surface of the bare wafer with pure water is simply measured. As a result, when only the adhesion strengthening treatment was performed, the average value of the contact angle of the processed surface of the bare wafer with pure water was about 63 degrees. On the other hand, in the case of performing comprehensive exposure processing such that the exposure amount of the surface to be treated of the bare wafer becomes 100 mJ after the adhesion-enhancing treatment, the average value of the contact angle with respect to pure water is about 47 degrees. In addition, in the case of performing comprehensive exposure processing such that the exposure amount of the surface to be processed of the bare wafer becomes 300 mJ after the adhesion-enhancing treatment, the average value of the contact angle with respect to pure water is approximately 31 degrees.

In this way, the contact angle of the processed surface of the bare wafer with respect to the pure water can be reduced due to the comprehensive exposure processing after the adhesion strengthening treatment. In addition, by adjusting the irradiation amount of ultraviolet rays, the contact angle of the processed surface of the bare wafer with pure water can be adjusted. From these results, it can be understood that the hydrophobic treatment of the treated surface of the substrate W can be suppressed by performing the overall exposure treatment after the adhesion strengthening treatment. In addition, it was found that the hydrophobicity of the treated surface of the substrate W can be adjusted by adjusting the irradiation amount of ultraviolet rays. Since the relationship between the bare wafer and pure water is the same as the relationship between the substrate W and the photoresist liquid, it can be known that the contact angle of the processed surface of the substrate W with respect to the photoresist liquid can be controlled due to the comprehensive exposure processing after the adhesion strengthening treatment.

[3] Adhesive strengthening processing unit FIG. 6 is a schematic cross-sectional view showing a specific configuration example of the adhesion strengthening processing unit AHP. The tightly reinforced processing unit AHP in FIG. 6 includes a flat plate 205, a cover 207, a cover lifting mechanism 209, a plurality of support pins 243, and a support pin lifting mechanism 247.

On the upper surface of the flat plate 205, a plurality of (for example, three) proximity balls 241 are provided. A substrate W is placed on the plurality of proximity balls 241 in a horizontal posture. The cover 207 is provided so as to cover the substrate W on the flat plate 205. The cover 207 is connected to the cover lifting mechanism 209. The cover lifting mechanism 209 is, for example, an air cylinder, and moves the cover 207 between an upper position and a lower position. In FIG. 6, the outer cover 207 is located at a lower position. When the outer cover 207 is located at a lower position, an airtight processing space PS is formed between the outer cover 207 and the flat plate 205.

A gas flow path 213 is provided in the cover 207. One end of a gas supply pipe 261 is connected to the gas flow path 213. The other end of the gas supply pipe 261 is connected to a gas supply unit (not shown) that can selectively supply a processing gas and an inert gas. The processing gas contains a close-strengthening agent. The inert gas is, for example, nitrogen.

A plurality of (for example, three) through holes 245 are provided so as to penetrate the flat plate 205 in the vertical direction. A plurality of (for example, three) support pins 243 are respectively inserted into the through holes 245 of the flat plate 205. Below the flat plate 205, the lower end of each support pin 243 is connected to the support pin lifting mechanism 247. The support pin lifting mechanism 247 raises and lowers the plurality of support pins 243. A sealing portion 243a on a circular plate is mounted on an upper end portion of each support pin 243. A recessed portion 245a is formed at an upper end portion of each of the through holes 245 of the flat plate 205 to accommodate the sealing portion 243a. The sealing portion 243a and the bottom surface of the recessed portion 245a are brought into close contact, thereby ensuring the airtightness of the processing space PS.

Inside the flat plate 205, a temperature adjustment section 249 for adjusting the temperature of the substrate W is provided. The temperature adjustment unit 249 is, for example, a heater. The temperature adjustment unit 249 performs heat treatment on the substrate W placed on the flat plate 205 by adjusting the temperature of the flat plate 205.

An exhaust slit 251 is formed on the flat plate 205 so as to extend in a circumferential direction outside the region on which the substrate W is placed. Further, a plurality of exhaust port ports 253 are formed so as to communicate with the exhaust slits 251, respectively. An exhaust pipe 255 is connected to the plurality of exhaust port ports 253. A pump 256 is inserted into the exhaust pipe 255. The gas in the processing space PS is exhausted from the close-intensified processing unit AHP through the exhaust pipe 255 by the pump 256. Thereby, the processing space PS is decompressed.

The adhesion strengthening process in the adhesion strengthening processing unit AHP will be described with reference to FIG. 6. Here, the operation of the adhesion-strengthening treatment unit AHP provided in the upper heat treatment section 301 in FIG. 3 will be described.

First, in a state where the cover 207 is in the upper position, the transfer mechanism 127 of FIG. 4 transfers the substrate W above the flat plate 5. By raising the plurality of support pins 243, the substrate is delivered to the plurality of support pins 243 from the transfer mechanism 127. When the support pin 243 is lowered, the substrate W is placed on the plurality of proximity balls 241.

After the cover 207 is moved to a lower position to form an airtight processing space PS, the pump 256 discharges gas from the processing space PS. Thereby, the processing space PS is decompressed. In addition, the temperature of the substrate W on the flat plate 205 is adjusted by the temperature adjustment unit 249.

In this state, the processing gas is supplied to the processing space PS through the gas supply pipe 261 and the gas flow path 213. Thereby, the adhesion-reinforcing agent is apply | coated to the to-be-processed surface of the board | substrate W. The processing gas system flowing out of the substrate W is discharged from the adhesion-enhancing processing unit AHP through the exhaust pipe 255. Then, an inert gas is supplied to the processing space PS through the gas supply pipe 261 and the gas flow path 213. Thereby, the processing gas in the processing space PS is replaced with an inert gas.

Thereafter, the operation of the pump 256 is stopped, and the cover 207 is moved to the upper position. In addition, by raising the plurality of support pins 243, the substrate W is delivered from the plurality of proximity balls 241 to the plurality of support pins 243. The transfer mechanism 127 in FIG. 4 receives the substrate W from the plurality of support pins 243 and carries it out from the adhesion-reinforcing processing unit AHP.

[4] Full exposure processing unit FIG. 7 and FIG. 8 are an external perspective view and a schematic side view showing a specific configuration example of the full exposure processing unit OWE. As shown in FIG. 7, the full-exposure processing unit OWE includes a light emitting section 300, a substrate moving section 400, and a carry-in / out section 500. The substrate moving section 400 includes a casing 410 having a substantially rectangular parallelepiped shape. In the following description, as shown by the arrows in FIG. 7, a direction parallel to the horizontal plane and facing from one surface of the housing 410 to the other side is referred to as a forward direction, and a direction parallel to the horizontal plane and facing from the other surface of the housing 410 to the one surface is referred to as the front. rear. The direction parallel to the horizontal plane and orthogonal to the front and rear is referred to as the width direction.

The light emitting portion 300 is provided so as to extend in the width direction, and is mounted on a central upper portion of the housing 410. A loading / unloading unit 500 is provided behind the light emitting unit 300. The carry-in / out section 500 includes a cover member 510, a cover driving section 590, and a support plate 591. The support plate 591 is fixed to the casing 410 in a horizontal posture. A cover driving portion 590 is mounted on the lower surface of the support plate 591. A cover member 510 is provided below the cover driving portion 590. An opening portion 412 is formed on the upper surface of the rear portion of the casing 410. The cover driving section 590 moves the cover member 510 in the vertical direction. Thereby, the opening part 412 is closed or opened.

As shown in FIG. 8, the light emitting unit 300 includes a housing 310, an ultraviolet lamp 320, and an inert gas supply unit 330. In FIG. 8, the casing 310 is represented by a single-dot chain line. An ultraviolet lamp 320 and an inert gas supply unit 330 are housed in the casing 310.

The ultraviolet lamp 320 and the inert gas supply section 330 are provided so as to extend in the width direction, respectively. In this example, as the ultraviolet lamp 320, a xenon excimer lamp that generates vacuum ultraviolet rays with a wavelength of 172 nm is used. In addition, the ultraviolet lamp 320 may be a lamp that generates vacuum ultraviolet rays having a wavelength of 230 nm or less, and other excimer lamps or deuterium lamps may be used instead of the xenon excimer lamp.

An emission surface 321 is formed on the lower surface of the ultraviolet lamp 320. When the ultraviolet lamp 320 is turned on, the vacuum ultraviolet rays are emitted downward from the emission surface 321. The vacuum ultraviolet rays emitted from the ultraviolet lamp 320 have a strip-shaped cross section orthogonal to the traveling direction (upward and downward directions in this example).

A plurality of injection holes (not shown) are formed in the inert gas supply portion 330 so as to face downward. During the exposure process of the substrate W, the inert gas supply unit 330 ejects the inert gas downward through a plurality of ejection holes. Thereby, the oxygen concentration in the space between the emission surface 321 of the ultraviolet lamp 320 and the substrate W can be reduced. Therefore, the attenuation of the vacuum ultraviolet rays irradiated to the substrate W can be suppressed.

Inside the housing 410 of the substrate moving section 400, a transfer mechanism 420, a local transfer mechanism 430, an inert gas supply section 450, and an illuminance sensor SE1 are provided. The transfer mechanism 420 includes a plurality of lift pins 421, a pin support member 422, and a pin lift drive unit 423.

A plurality of lifting pins 421 extending in the vertical direction are attached to the pin support members 422, respectively. The pin lift driving portion 423 supports the pin support member 422 so as to be movable in the vertical direction. The plurality of lift pins 421 are arranged below the opening portion 412. The upper end portion of the plurality of lifting pins 421 is moved by the pin lifting driving portion 423 between a transfer position above the opening portion 412 and a standby position below the partial transfer robot 434 described below.

The partial conveyance mechanism 430 includes a feed shaft 431, a feed shaft motor 432, a pair of guide rails 433, a partial conveyance robot 434, and a pair of robot support members 435. The feed shaft motor 432 is disposed at the front of the housing 410. A feed shaft 431 is provided so as to extend rearward from the feed shaft motor 432. The feed shaft 431 is, for example, a ball screw, and is connected to a rotation shaft of the feed shaft motor 432.

A pair of guide rails 433 are provided on the inner lower surface of the casing 410 so as to extend parallel to each other in the front-rear direction. A pair of robot support members 435 are provided on the pair of guide rails 433 so as to be movable in the front-rear direction, respectively. In FIG. 8, only one guide rail 433 and one robot support member 435 are shown. The partial transfer robot 434 is supported by a pair of robot support members 435. The partial transfer robot 434 is connected to the feed shaft 431 via a connection member (not shown). The partial transfer robot 434 is provided with a plurality of hole portions (not shown) of a plurality of lifting pins 421 that can be inserted by the transfer mechanism 420, respectively. The substrate W is placed on the local transfer robot 434.

The feed shaft 431 is rotated by the feed shaft motor 432. Thereby, the local conveyance robot 434 moves in the front-rear direction between a position further rearward than the light emitting part 300 and a position further forward than the light emitting part 300. Further, in FIG. 8, the partial transfer robot 434 located at the rear position is shown by a solid line, and the partial transfer robot 434 located at the front position is shown by a two-point chain line.

In a state where the band-shaped vacuum ultraviolet rays are emitted from the ultraviolet lamp 320, the partial transfer robot hand 43 moves from the front position to the rear position at a fixed moving speed, thereby scanning the vacuum ultraviolet rays from one end portion of the substrate W toward the other end portion. Thereby, the entire area of the upper surface of the substrate W is irradiated with vacuum ultraviolet rays.

The inert gas supply portion 450 is provided at the rear portion of the case 410 so as to extend in the width direction. A plurality of injection holes are formed in the inert gas supply unit 450, and the inert gas is injected from the plurality of injection holes.

An illumination sensor SE1 is further provided in the housing 410. The illuminance sensor SE1 is disposed at a position facing the emission surface 321 of the light emission unit 300. The illuminance sensor SE1 includes a light-receiving element such as a photodiode, and detects the illuminance of light irradiated onto the light-receiving surface of the light-receiving element. Here, the illuminance is the power per unit area of light to the light-receiving surface. The unit of the illuminance is, for example, "W / m ² ". The illuminance sensor SE1 is raised and lowered between an upper position and a lower position by a sensor driving section (not shown). The illuminance sensor SE1 detects the illuminance of vacuum ultraviolet rays to be irradiated to the substrate W at an upper position.

The exposure amount is predetermined for each substrate W or the type of each substrate W based on the processing content of the substrate W. The predetermined exposure amount is stored in advance as the set exposure amount in the overall exposure control section 52 described below before the exposure processing of the substrate W. The exposure amount is set to, for example, a value in which the contact angle of the processed surface of the substrate W with respect to the photoresist liquid falls within a predetermined range.

As described above, the strip-shaped vacuum ultraviolet rays are scanned from one end portion to the other end portion of the substrate W at a fixed speed. In this case, the exposure amount of the processed surface of the substrate W can be adjusted by controlling the moving speed of the substrate W. For example, the exposure amount can be reduced by increasing the moving speed of the substrate W, and the exposure amount can be increased by reducing the moving speed of the substrate W.

In this embodiment, the illuminance of the vacuum ultraviolet rays is detected by the illuminance sensor SE1 before the full exposure processing of the substrate W, and the moving speed of the substrate W is adjusted based on the detection result. Thereby, the exposure amount of the processed surface of the substrate W is adjusted to a set exposure amount.

The full exposure processing in the full exposure processing unit OWE will be described with reference to FIG. 8. Here, the operation of the full exposure processing unit OWE provided in the upper heat treatment section 301 in FIG. 3 will be described.

First, an inert gas is supplied into the housing 410 from the inert gas supply unit 450 in a state where the opening portion 412 of the housing 410 is closed by the cover member 510. Thereby, the oxygen concentration in the casing 410 is maintained at, for example, less than 1%.

Next, the opening member 412 is opened by raising the cover member 510, and the plurality of lift pins 421 of the transfer mechanism 420 are raised. As a result, the upper ends of the plurality of lift pins 421 are moved from the standby position to the transfer position. In this state, the substrate W in a horizontal posture is inserted between the cover member 510 and the opening portion 412 in the horizontal direction by the transfer mechanism 127 of FIG. 4, and is placed on the plurality of lift pins 421. Then, the plurality of lifting pins 421 of the transfer mechanism 420 are lowered. Thereby, the upper ends of the plurality of lifting pins 421 are moved from the transfer position to the standby position, and the substrate W in the horizontal posture is delivered from the plurality of lifting pins 421 to the local transfer robot 434. Then, the opening portion 412 is closed by lowering the cover member 510.

Next, the local transport robot 434 is moved from the rear position to the front position. At this time, the ultraviolet lamp 320 is in an off state. Therefore, the substrate W is not exposed. Next, the ultraviolet lamp 320 is switched from the off state to the on state. The inert gas is supplied from the inert gas supply unit 330 into the housing 410.

Then, the local transport robot 434 is moved from the front position to the rear position. The moving speed at this time is adjusted based on the illuminance of the vacuum ultraviolet rays detected by the pre-illuminance sensor SE1. Thereby, as described above, the processed surface of the substrate W is exposed with a set exposure amount. Thereafter, the ultraviolet lamp 320 is switched from the on state to the off state. The supply of the inert gas by the inert gas supply unit 330 is stopped.

Next, the opening member 412 is opened by raising the cover member 510, and the plurality of lift pins 421 of the transfer mechanism 420 are raised. Thereby, the substrate W is delivered from the partial transfer robot 434 to the plurality of lift pins 421 to move the substrate W above the opening 412. In this state, the substrate W is received by the transfer mechanism 127 of FIG. 4 and is carried out from the full exposure processing unit OWE.

[5] Control System FIG. 9 is a diagram for explaining a configuration example of a control system of the substrate processing apparatus 100. As shown in FIG. 9, the substrate processing apparatus 100 includes, in addition to the main control section 114, a close-intensification control section 51, a full exposure control section 52, a film formation control section 53, a development control section 54, an edge exposure control section 55, and a cleaning device. The net drying control unit 56, the heating and cooling control unit 57, and the transport control unit 58. The main control unit 114 controls the close-tightening control unit 51, the overall exposure control unit 52, the film formation control unit 53, the development control unit 54, the edge exposure control unit 55, the washing and drying control unit 56, the heating and cooling control unit 57, and the conveyance. The control unit 58 collectively controls the operation of the substrate processing apparatus 100.

The adhesion-enhancing control unit 51 controls the operation of the adhesion-enhancing processing unit group G1. The tightly strengthened processing unit group G1 includes a plurality of tightly strengthened processing units AHP in FIG. 3. The full exposure control unit 52 controls the operation of the full exposure processing unit group G2. The full exposure processing unit group G2 includes a plurality of full exposure processing units OWE of FIG. 3. The film formation control unit 53 controls the operation of the coating processing unit group G3. The coating processing unit group G3 includes a plurality of coating processing units 129 of FIG. 2. The development control unit 54 controls the operation of the development processing unit group G4. The development processing unit group G4 includes a plurality of development processing units 139 of FIG. 2.

The edge exposure control section 55 controls the operation of the edge exposure section group G5. The edge exposure portion group G5 includes a plurality of edge exposure portions EEW in FIG. 3. The washing and drying control unit 56 controls the operation of the washing and drying processing unit group G6. The washing and drying processing unit group G6 includes a plurality of washing and drying processing units SD1 of FIG. 2 and a plurality of washing and drying processing units SD2 of FIG. 3. The heating and cooling control unit 57 controls the operation of the heat treatment unit group G7. The heat treatment unit group G7 includes a plurality of heating units PHP and a plurality of cooling units CP in FIG. 3 and a plurality of placement and cooling sections P-CP in FIG. 4. The transport control unit 58 controls the operation of the transport mechanism group G8. The transport mechanism group G8 includes the transport mechanisms 115, 142, 141, and 146 of Fig. 1 and the transport mechanisms 127, 128, 137, and 138 of Fig. 4.

Furthermore, in the example of FIG. 9, a plurality of control units are provided so as to correspond to various processing contents. The substrate processing apparatus 100 may be divided into a plurality of processing regions, and a control unit may be provided for each processing region. The entire operation of the substrate processing apparatus 100 may be controlled by only the main control unit 114.

FIG. 10 is a flowchart showing the operation of each control unit in FIG. 9. Here, an operation performed by one substrate W transferred by the transfer mechanisms 127 and 137 of FIG. 4 will be described. The same operation is performed for the substrate W transferred by the transfer mechanisms 128 and 138 in FIG. 4.

First, the conveyance control unit 58 controls the conveyance mechanisms 115 and 127 of FIG. 4, and conveys the unprocessed substrate W in the carrier 113 to any one of the tightly strengthened processing units AHP in the upper heat treatment unit 301 of FIG. 3. The adhesion-strengthening control unit 51 controls the adhesion-strengthening processing unit AHP of the substrate W to be conveyed, and performs the adhesion-strengthening process of supplying a adhesion-reinforcing agent to the processing surface of the substrate W (step S1).

Next, the conveyance control unit 58 controls the conveyance mechanism 127 of FIG. 4, and conveys the substrate W after the close-strengthening processing from the close-strengthening and strengthening processing unit AHP to the full-exposure processing unit OWE of the upper heat treatment unit 301 of FIG. 3. The full-exposure control unit 52 controls the full-exposure processing unit OWE of the substrate W to be conveyed, and performs full-exposure processing for irradiating ultraviolet rays onto the processed surface of the substrate W (step S2).

Next, the transfer control unit 58 controls the transfer mechanism 127 to transfer the substrate W after the full exposure processing from the full exposure processing unit OWE to any one of the cooling units CP of the upper heat treatment unit 301 in FIG. 3. The heating and cooling control unit 57 controls the cooling unit CP of the substrate W to be conveyed, and cools the substrate W (step S3).

Next, the transfer control unit 58 controls the transfer mechanism 127 to transfer the cooled substrate W from the cooling unit CP to one of the coating processing units 129 of the coating processing chambers 21 and 22 in FIG. 2. The film formation control unit 53 controls the coating processing unit 129 of the substrate W to be transported, and applies a photoresist liquid to the processing surface of the substrate W, thereby forming a photoresist film (step S4).

Next, the transfer control unit 58 controls the transfer mechanism 127 to transfer the substrate W on which the photoresist film is formed from the coating processing unit 129 to any one of the heating units PHP of the upper heat treatment unit 301 in FIG. 3. The heating and cooling control unit 57 controls the heating unit PHP of the substrate W to be conveyed, and heats the substrate W (step S5).

Next, the transfer control unit 58 controls the transfer mechanisms 127 and 137 to transfer the heated substrate W from the heating unit PHP to the edge exposure unit EEW of the upper heat treatment unit 303 in FIG. 3. The edge exposure control unit 55 controls the edge exposure unit EEW of the substrate W to be conveyed, and performs edge exposure processing on the substrate W (step S6).

Next, the conveyance control unit 58 controls the conveyance mechanisms 137 and 141 to convey the substrate W after the edge exposure processing from the edge exposure portion EEW to any of the cleaning and drying processing units SD1 of the cleaning and drying processing unit 161 in FIG. 2. The washing and drying control unit 56 controls the washing and drying processing unit SD1 of the substrate W to be conveyed, and performs washing and drying processing on the substrate W (step S7).

Next, the transfer control unit 58 controls the transfer mechanism 141 to transfer the cleaned and dried substrate W from the washing and drying processing unit SD1 to any one of the placing and cooling units P-CP in FIG. 4. The heating and cooling control unit 57 controls the placement and cooling unit P-CP of the substrate W to be conveyed, and cools the substrate W (step S8).

Next, the transport control unit 58 controls the transport mechanism 146 to carry the cooled substrate W from the placement and cooling unit P-CP into the exposure apparatus 15 of FIG. 1 (step S9). After the substrate W is exposed in the exposure device 15, the conveyance control unit 58 controls the conveying mechanisms 146 and 142 to carry out the exposed substrate W from the exposure device 15 (step S10), and convey the substrate W to FIG. 3 One of the washing and drying processing units 162 is a washing and drying processing unit SD2. The washing and drying control unit 56 controls the washing and drying processing unit SD2 of the substrate W to be conveyed, and performs washing and drying processing on the substrate W (step S11).

Next, the transfer control unit 58 controls the transfer mechanism 142 to transfer the cleaned and dried substrate W from the washing and drying processing unit SD2 to any one of the heating units PHP of the upper heat treatment unit 303 in FIG. 3. The heating and cooling control unit 57 controls the heating unit PHP of the substrate W to be conveyed, and performs a PEB process on the substrate W (step S12).

Next, the transfer control unit 58 controls the transfer mechanism 137 to transfer the substrate W processed by the PEB to any one of the cooling units CP in the upper heat treatment unit 303 in FIG. 3. The heating and cooling control unit 57 controls the cooling unit CP of the substrate W to be conveyed, and cools the substrate W (step S13).

Next, the transfer control unit 58 controls the transfer mechanism 137 to transfer the cooled substrate W to any one of the development processing units 139 of the development processing chambers 31 and 32 in FIG. 2. The development control unit 54 controls the development processing unit 139 of the substrate W to be conveyed, and performs a development process on the substrate W (step S14).

Next, the conveyance control unit 58 controls the conveyance mechanisms 137, 127, and 115, and returns the substrate W after the development processing from the development processing unit 139 to the carrier 113 in FIG. Thereby, the processing of one example of the substrate W is completed.

[6] Effect In the substrate processing apparatus 100 of the above embodiment, after the adhesion strengthening agent containing an organic material is supplied to the processed surface of the substrate W in the adhesion strengthening processing unit AHP, the substrate W is fully exposed in the full exposure processing unit OWE. The treated surface is irradiated with ultraviolet rays. In this case, the hydrophobicity of the processed surface of the substrate W is increased by supplying an adhesion-enhancing agent, and then the hydrophobicity of the processed surface of the substrate W is adjusted by irradiating ultraviolet rays. Thereby, when the photoresist liquid is applied later, the contact angle of the processed surface of the substrate W with respect to the photoresist liquid is controlled to an appropriate range. Therefore, it is possible to prevent a coating defect from being generated, and it is possible to appropriately apply a photoresist liquid to a desired region of the processed surface of the substrate W. In addition, the adhesion between the processed surface of the substrate W and the photoresist film can be ensured. As a result, a photoresist film can be appropriately formed on the processing surface of the substrate W.

Further, in this embodiment, the hydroxyl group on the treated surface of the substrate W is changed to trimethylsilyloxy by the adhesion-reinforcing treatment, and the top three on one surface of the substrate W is made by the subsequent full exposure treatment. The silyloxy group is separated into hydroxy and hexamethyldisilaxane. Thereby, the hydrophobicity of the processing surface of the substrate W can be adjusted appropriately.

[7] Another example of the close-intensification processing unit and the full-exposure processing unit In the above-mentioned embodiment, the close-intensification processing and the full-exposure processing are separately performed in the separate intensive-intensification processing unit AHP and the full-exposure processing unit OWE separately, but it can also be performed. Perform both intensive enhancement processing and full exposure processing in one unit. FIG. 11 is a schematic side view showing a configuration example of a hydrophobicity adjusting unit for performing a close-intensifying treatment and a full-exposure treatment. The hydrophobicity adjusting unit 600 in FIG. 11 is provided, for example, in each of the upper heat treatment section 301 and the lower heat treatment section 302 in FIG. 3.

The hydrophobicity adjusting unit 600 shown in FIG. 11 includes a case 601, a close-contact reinforcing portion 610, a light emitting portion 620, and a local conveyance mechanism 630. The adhesion-enhancing portion 610 and the light emitting portion 620 are respectively provided in the casing 601. The adhesion-strengthening unit 610 has the same configuration as the adhesion-reinforcement processing unit AHP of FIG. 6, and includes a flat plate 205 and a cover 207, and includes various other constituent elements (not shown). The adhesion-strengthening portion 610 supplies a adhesion-enhancing agent to the substrate W in an air-tight processing space.

The light emitting section 620 has the same configuration as the light emitting section 300 of FIG. 8 and emits vacuum ultraviolet rays. The partial conveyance mechanism 630 has the same structure as the partial conveyance mechanism 430 of FIG. 8, and includes a feed shaft 431, a feed shaft motor 432, a pair of guide rails 433, a partial conveyance robot 434, and a pair of robot support members 435. The partial transfer robot 434 moves between a transfer position for transferring the substrate W to the adhesion-reinforcing section 610 and an external position outside the adhesion-reinforcing section 610. FIG. 11 shows a partial transfer robot 434 located at an external position.

The adhesion enhancement processing and the overall exposure processing in the hydrophobicity adjustment unit 600 of FIG. 11 will be described. Here, the operation of the hydrophobicity adjustment unit 600 provided in the upper heat treatment section 301 in FIG. 3 will be described. First, the transfer mechanism 127 of FIG. 4 transfers the substrate W into the housing 601 and delivers the substrate W to a local transfer robot 434 located at an external position. The partial transfer robot 434 moves from an external position to the transfer position, and the partial transfer robot 434 delivers a substrate W to a support pin 243 (see FIG. 6) (not shown). Then, the local transfer robot 434 is retracted to an external position, the substrate W is placed on the flat plate 205 by the support pin 243, and the cover 207 is moved to a lower position. Thereafter, in the adhesion-strengthening section 610, the adhesion-strengthening treatment is performed in the same manner as the adhesion-strengthening processing unit AHP in FIG.

When the adhesion-strengthening treatment is completed, an inert gas is supplied into the casing 601 through an inert gas supply unit (not shown). Then, the local transfer robot 434 is moved to the transfer position, and the substrate W is delivered to the local transfer robot 434 from the support pin 243 (see FIG. 6) (not shown). Then, while the vacuum emitting ultraviolet rays are emitted downward by the light emitting portion 620, the local transfer robot 434 is moved from the transfer position to the external position. Thereby, the whole of the processing surface of the substrate W to which the adhesion-reinforcing agent is supplied is irradiated with vacuum ultraviolet rays. In this case, it is preferable to detect the illuminance of the vacuum ultraviolet rays in advance by an unillustrated illuminance sensor SE1 (see FIG. 8), and adjust the moving speed of the substrate W based on the detection result.

In this way, in the hydrophobicity adjusting unit 600 of FIG. 11, the adhesion enhancement processing and the comprehensive exposure processing are sequentially performed in the common housing 601. As a result, compared with the case where the close-intensification processing unit AHP and the full-exposure processing unit OWE are separately provided, the close-intensification processing and the full-exposure processing can be performed efficiently, thereby increasing the productivity. In addition, since both the adhesion-enhancement processing and the full-exposure processing can be performed in a small space, the size of the substrate processing apparatus 100 can be reduced.

[8] Other Embodiments In the above embodiments, an adhesion strengthening agent containing HMDS is used as an organic material, but as long as the hydrophobicity of the substrate W can be improved, TMSDMA (trimethylsilyldimethylamine) or the like can be used. Other sealants containing organic materials.

In the above-mentioned embodiment, before the photoresist film is formed, the to-be-processed surface of the substrate W is subjected to the adhesion strengthening treatment and the overall exposure treatment, but the same treatment may be performed before the other treatment films are formed. For example, before forming an anti-reflection film to reduce standing waves or halos generated during exposure processing, the processed surface of the substrate W may be subjected to intensive treatment and full exposure processing. In this case, the adhesion between the processed surface of the substrate W and the antireflection film can be ensured, and the processing liquid for the antireflection film can be appropriately coated on a desired area of the processed surface of the substrate W. Alternatively, before forming a processing film including a directional self-assembly material for forming a fine pattern by DSA (Directed Self Assembly) technology, the processed surface of the substrate W may be closely adhered and fully exposed. deal with.

[9] Correspondence between the respective elements of the scope of the patent application and the elements of the embodiment The following describes examples of the correspondence of the elements of the scope of the patent application and the elements of the embodiment, but the invention is not limited to Examples.

In the above-mentioned embodiment, the substrate processing apparatus 100 is an example of a substrate processing apparatus, the adhesion-reinforcing processing unit AHP is an example of a adhesion-reinforcing section, the light emitting sections 300 and 620 are examples of an irradiation section, and the coating processing unit 129 is a film-forming section. For example, the cooling unit CP is an example of a cooling section. The housing 601 is an example of a housing, the flat plate 205 is an example of a mounting portion, and the local transfer robot 434 is an example of a transfer portion.

As each constituent element of the scope of patent application, various other elements having the structure or function described in the scope of patent application can also be used.

11‧‧‧ loading block

12‧‧‧The first processing block

13‧‧‧The second processing block

14‧‧‧Interface Block

14A‧‧‧Washing and drying processing block

14B‧‧‧ Move in and out

15‧‧‧Exposure device

15a‧‧‧Substrate Carry-in Section

15b‧‧‧Substrate removal unit

21‧‧‧ Coating treatment room

22‧‧‧ Coating Treatment Room

23‧‧‧ Coating Treatment Room

24‧‧‧ Coating Treatment Room

25‧‧‧Rotary Chuck

27‧‧‧Shield

28‧‧‧ treatment liquid nozzle

29‧‧‧ Nozzle transfer mechanism

31‧‧‧Development processing room

32‧‧‧Development processing room

33‧‧‧Development processing room

34‧‧‧Development processing room

35‧‧‧Rotary Chuck

37‧‧‧Shield

38‧‧‧Developing nozzle

39‧‧‧ mobile agency

51‧‧‧Tightened Control Unit

52‧‧‧Full exposure control department

53‧‧‧Film forming control unit

54‧‧‧Development control section

55‧‧‧Edge exposure control section

56‧‧‧ Washing and drying control department

57‧‧‧Heating and cooling control unit

58‧‧‧Transportation Control Department

81‧‧‧washing and drying processing room

82‧‧‧washing and drying processing room

83‧‧‧washing and drying processing room

84‧‧‧washing and drying processing room

91‧‧‧washing and drying processing room

92‧‧‧washing and drying processing room

93‧‧‧washing and drying processing room

94‧‧‧washing and drying processing room

95‧‧‧washing and drying processing room

100‧‧‧ substrate processing equipment

111‧‧‧ Vehicle mounting section

112‧‧‧Transportation Department

113‧‧‧ Vehicle

114‧‧‧Main Control Department

115‧‧‧ transfer agency

121‧‧‧ Coating Processing Department

122‧‧‧Transportation Department

123‧‧‧Heat treatment department

125‧‧‧ Upper Transfer Room

126‧‧‧ Lower transfer room

127‧‧‧Transportation agency

128‧‧‧ transfer agency

129‧‧‧coating processing unit

131‧‧‧Development processing section

132‧‧‧Transportation Department

133‧‧‧Heat treatment department

135‧‧‧ Upper Transfer Room

136‧‧‧ Lower transfer room

137‧‧‧Transportation agency

138‧‧‧ transfer agency

139‧‧‧Development processing unit

141‧‧‧Transportation agency

142‧‧‧Transportation agency

146‧‧‧Transportation agency

161‧‧‧Washing and Drying Department

162‧‧‧Washing and Drying Department

163‧‧‧Transportation Department

205‧‧‧ tablet

207‧‧‧Cover

209‧‧‧Housing lifting mechanism

213‧‧‧Gas flow path

241‧‧‧Received

243‧‧‧Support

243a‧‧‧Sealing Department

245‧‧‧through hole

245a‧‧‧Concave

247‧‧‧Support pin lifting mechanism

249‧‧‧Tempering Department

251‧‧‧Exhaust slit

253‧‧‧Exhaust port

255‧‧‧Exhaust pipe

256‧‧‧Pump

261‧‧‧Gas supply pipe

300‧‧‧light emitting section

301‧‧‧upper heat treatment department

302‧‧‧ Lower heat treatment department

303‧‧‧upper heat treatment department

304‧‧‧ Lower heat treatment department

310‧‧‧Shell

320‧‧‧ UV Light

321‧‧‧ exit surface

330‧‧‧Inert gas supply department

400‧‧‧ substrate moving section

410‧‧‧shell

412‧‧‧ opening

420‧‧‧Transfer agency

421‧‧‧ Lifting Pin

422‧‧‧pin support member

423‧‧‧pin lift drive unit

430‧‧‧local transfer agency

431‧‧‧Feed axis

432‧‧‧Feed shaft motor

433‧‧‧rail

434‧‧‧Partial transfer robot

435‧‧‧ robot support components

450‧‧‧Inert gas supply department

500‧‧‧ Move in and out

510‧‧‧ cover member

590‧‧‧cover drive unit

591‧‧‧ support board

600‧‧‧ Hydrophobicity adjustment unit

601‧‧‧shell

610‧‧‧Tightened Strengthening Department

620‧‧‧light emitting section

630‧‧‧local transfer agency

AHP‧‧‧Tightened Enhanced Processing Unit

CP‧‧‧ Cooling Unit

EEW‧‧‧Edge exposure section

G1‧‧‧Tightening and strengthening processing unit group

G2‧‧‧Full exposure processing unit group

G3‧‧‧Coating processing unit group

G4‧‧‧Development processing unit group

G5‧‧‧Edge exposure group

G6‧‧‧washing and drying processing unit group

G7‧‧‧Heat treatment unit group

G8‧‧‧Controlling Transport Organization Group

H1‧‧‧ Robot

H2‧‧‧ Robot

OWE‧‧‧Full exposure processing unit

PASS1‧‧‧ substrate mounting section

PASS2‧‧‧ substrate mounting section

PASS3‧‧‧ substrate mounting section

PASS4‧‧‧Substrate mounting section

PASS5‧‧‧ substrate mounting section

PASS6‧‧‧ substrate mounting section

PASS7‧‧‧Substrate mounting section

PASS8‧‧‧ substrate mounting section

PASS9‧‧‧Substrate mounting section

P-BF1‧‧‧mounting and buffering section

P-BF2 ‧‧‧ placement and buffer section

P-CP‧‧‧Mounting and cooling section

PHP‧‧‧Heating Unit

PS‧‧‧Processing space

SD1‧‧‧washing and drying processing unit

SD2‧‧‧washing and drying processing unit

SE1‧‧‧illumination sensor

W‧‧‧ substrate

X‧‧‧ direction

Y‧‧‧ direction

Z‧‧‧ direction

FIG. 1 is a schematic plan view of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic side view of a substrate processing apparatus mainly showing a coating processing section, a developing processing section, and a washing and drying processing section of FIG. 1. FIG. FIG. 3 is a schematic side view of a substrate processing apparatus mainly showing the heat treatment section and the washing and drying treatment section of FIG. 1. FIG. 4 is a schematic side view mainly showing the conveying section of FIG. 1. 5 (a)-(c) are diagrams for explaining the change in the hydrophobicity of the treated surface of the substrate due to the adhesion-strengthening treatment and the full-exposure treatment. FIG. 6 is a schematic cross-sectional view showing a specific configuration example of the adhesion-strengthening processing unit. FIG. 7 is an external perspective view showing a specific configuration example of the full exposure processing unit. FIG. 8 is a schematic side view showing a specific configuration example of the full exposure processing unit. FIG. 9 is a diagram for explaining a configuration example of a control system of a substrate processing apparatus. FIG. 10 is a flowchart showing the operation of each control unit in FIG. 9. Fig. 11 is a schematic side view showing a configuration example of a hydrophobicity adjusting unit.

Claims (14)

A substrate processing apparatus comprising: a contact-strengthening unit that supplies a contact-enhancing agent containing an organic material to one side of a substrate; and an irradiation unit that irradiates ultraviolet rays to the side of the substrate that has been supplied with the contact-enhancing agent through the contact-enhancement unit. And a film forming unit, which supplies a processing solution to the one side of the substrate that has been irradiated with ultraviolet rays by the irradiation unit, and forms a processing film on the one side of the substrate. The substrate processing apparatus according to claim 1, wherein the organic material includes hexamethyldisilazane. For example, the substrate processing apparatus of claim 1 or 2, wherein the adhesion-strengthening section supplies the adhesion-reinforcing agent to the one surface of the substrate such that the hydroxyl group on the one surface of the substrate becomes trimethylsilyloxy, and the irradiation section The trimethylsilyloxy group on the one side of the substrate is separated into a hydroxyl group and a hexamethyldisilaxane so that the aforementioned side of the substrate is irradiated with ultraviolet rays. The substrate processing apparatus according to claim 1 or 2, wherein the processing liquid contains a photosensitive material. The substrate processing apparatus according to claim 1 or 2, wherein the irradiating section adjusts an irradiation amount of ultraviolet rays so that a contact angle between the one surface of the substrate and the processing liquid becomes a predetermined value or less. For example, the substrate processing apparatus of claim 1 or 2 further includes a cooling section that cools the substrate after the irradiation section is irradiated with ultraviolet rays and before the processing film is formed by the film forming section. For example, the substrate processing apparatus of claim 1 or 2, wherein the adhesion-reinforcing portion includes a mounting portion on which the substrate is placed, and the substrate processing device further includes a transfer portion. The transfer portion is configured to hold the substrate while holding the substrate. The transfer position transferred to the placement portion and an external position away from the transfer position are moved. The adhesion-strengthening portion supplies a adhesion-reinforcing agent to the substrate placed on the placement portion, and the irradiation portion is held by the transfer portion. When the substrate is moved from the transfer position to the external position, the substrate held by the transfer unit is irradiated with ultraviolet rays. A substrate processing method comprising the steps of: supplying an adhesion-reinforcing agent containing an organic material to one side of a substrate through an adhesion-reinforcing portion; irradiating ultraviolet rays to the one-side of the substrate to which the adhesion-reinforcing agent has been supplied through the adhesion-reinforcement portion; And by supplying a processing liquid to the one side of the substrate that has been irradiated with ultraviolet rays by the irradiation section, a processing film is formed on the one side of the substrate. The substrate processing method according to claim 8, wherein the organic material comprises hexamethyldisilazane. For example, the substrate processing method of claim 8 or 9, wherein the step of supplying the adhesion-enhancing agent includes changing the hydroxyl group on the one side of the substrate to trimethylsilyloxy, and the step of irradiating ultraviolet rays includes the one side of the substrate Trimethylsilyloxy is separated into hydroxy and hexamethyldisilaxane. The substrate processing method according to claim 8 or 9, wherein the processing liquid contains a photosensitive material. The substrate processing method according to claim 8 or 9, wherein the step of irradiating ultraviolet rays adjusts the irradiation amount of ultraviolet rays so that the contact angle of the one surface of the substrate with respect to the processing liquid becomes a predetermined value or less. For example, the substrate processing method of claim 8 or 9, further comprising the steps of: cooling the substrate after the step of irradiating ultraviolet rays and before the step of forming a processing film. If the substrate processing method of claim 8 or 9 is further included, the method further includes the following steps: while the substrate is held by the transfer unit, the transfer unit is placed at a transfer position on the placement portion that transfers the substrate to the tightly reinforced portion and leaves the transfer The step of supplying the adhesion-enhancing agent includes the step of supplying the adhesion-enhancing agent to the substrate placed on the placement portion, and the step of irradiating the ultraviolet rays includes the step of holding the substrate in the transporting portion and moving the substrate from the transfer position. When the external position is moved, the substrate held by the transfer unit is irradiated with ultraviolet rays.