TW201300565A - Manufacturing method of a transparent conducting oxide film - Google Patents

Abstract

The invention provides a manufacturing method of a transparent conducting oxide film. It mainly comprises the steps of: (a) providing a film-forming device; (b) providing a preheating unit; (c) providing a raw materials for depositing a transparent conducting oxide film on a substrate to form a transparent conducting substrate; (d) providing a annealing device, the transparent conducting oxide film substrate is transferred to the annealing device for annealing treatment; and (e) a cooling treatment for the transparent conducting substrate. By using the manufacturing method of the present invention, a continuous and uniform with larger area deposition of the thin film can be obtained.

Description

Process method for transparent conductive film

The present invention relates to a method for fabricating a conductive film, and in particular to a method for fabricating a transparent conductive film.

The electrodes of various display elements such as a liquid crystal display element and an electroluminescence element, or electrodes of a thin film solar cell, are mainly thin films having a transparent conductive property having a high visible light transmittance and a low electric resistance. Therefore, the transparent conductive film becomes an electrode material which is indispensable for accomplishing various display elements in the present day. For example, Indium Tin Oxide (ITO) or Tin Oxide (TO), Fluorine-doped Tin Oxide (FTO) or Aluminum-doped Aluminum Oxide (Aluminum-doped) A film containing a conductive metal oxide such as Zinc Oxide or AZO) as a main component, and having excellent transparency to visible light and excellent electrical conductivity. When preparing a transparent conductive film, it is often divided into physical deposition and chemical methods. Among them, physical deposition methods include: thermal evaporation, electron beam evaporation (E-beam evaporation), direct current sputtering (sputtering), and radio frequency sputtering. The chemical deposition methods include: spray pyrolysis technique (SPT), dip coating, sol-gel method, spin coating, chemical vapor deposition (Chemical). Vapor deposition, CVD) and other methods.

Further, generally, a device for manufacturing a transparent conductive film is used, for example, a plasma CVD method. In this method, an existing target or a film-forming raw material precursor (Precursor) is plasma-formed on the substrate. Since the process conditions must be carried out under vacuum (or near vacuum), if such a process is operated in a continuous operation, the equipment that must be used is not only complicated but also expensive, so that the manufactured product is expensive. Indium (In) is not suitable for the development of future industries because of its high price and limited resources. The tin oxide film has a low price, good stability at high temperature, and stable chemical stability, and the coating process for forming a tin oxide film does not need to be performed in a vacuum environment, so the development of such a process condition for the transparent conductive film Very competitive.

Referring to the manufacturing apparatus of the tin dioxide transparent conductive film disclosed in the Chinese patent, the publication number is CN1563482A. The patent discloses a manufacturing device for a tin dioxide transparent conductive film, which is mainly characterized in that a ceramic tube is used as a transmission member on the coating track, and a shower head device is disposed in the middle of the processing chamber to spray the surface of the substrate. Tin dioxide transparent conductive film. However, this patent discloses that the showerhead device is disposed in the middle of the process chamber, which is not conducive to a large-area and continuous process, and a large-area and uniform film cannot be obtained. Moreover, this patent does not further disclose the material of the ceramic tube as the transmission member and the specific implementation method thereof, so that the substrate may be worn or the like when the substrate is transferred.

In addition, it is known that a conductive film device for manufacturing tin oxide needs to be combined with a float glass that is currently used in a continuous operation process (the molten glass liquid is melted and polished on a molten metal surface at a high temperature). The process of flat, smooth flat glass) and its annealing process. This prior art technique must introduce a float glass into an integrally formed tunnel furnace. However, tunnel furnaces must be modified to meet different process requirements depending on the process conditions of the various film reactants, such as chemical vapor deposition (CVD) processes under normal pressure. However, for a manufacturer that does not have a float process, a coating process of a transparent conductive film cannot be performed.

In view of the above, it is desirable to provide a transparent conductive film forming apparatus and a processing method capable of meeting the aforementioned requirements, and to obtain a continuous and uniform continuous film formation on a large-area substrate.

SUMMARY OF THE INVENTION A primary object of the present invention is to provide a process for producing a transparent conductive film by which a continuous and uniform high quality film can be formed on a large-area substrate.

In order to achieve the above object, the present invention further provides a method for fabricating a transparent conductive film, the steps comprising: (a) providing a film forming device; (b) providing a preheating device; and (c) providing a starting material required for the transparent conductive film Entering a film forming material supply unit, and transferring a substrate into the film forming chamber by a conveying device and depositing a transparent conductive film layer to form a transparent conductive substrate; (d) providing an annealing device, wherein the transparent conductive substrate is transferred to the conveying device The annealing device performs an annealing treatment; and (e) the transparent conductive substrate is subjected to a cooling treatment. In the step (a): the film forming apparatus comprises: a furnace body, a film forming chamber, a conveying device, a first heater, and a detachable inlet and outlet gas structure. Wherein, the film forming chamber extends transversely through the furnace body, the film forming chamber has a substrate input end and a substrate output end, and the bottom area of the film forming chamber is between 600 mm×600 mm and 1600 mm×2400 mm. The conveying device has a conveying track extending through the film forming chamber, and the first heater is disposed below the conveying track. The detachable inlet and outlet gas structure is disposed above the film forming chamber and faces the conveying device, and the detachable inlet and outlet gas structure comprises: a plate body; a first locking component surrounding the plate body to lock the plate body on the furnace body; The exhaust unit is disposed at one end of the plate body and adjacent to the substrate output end of the film forming chamber; the film forming material supply unit is disposed in the plate body opposite to the other end of the exhaust unit and adjacent to the substrate input end of the film forming chamber And a second heater disposed in the plate body and located between the exhaust unit and the film forming material supply unit. In the step (b), the substrate is placed in a preheating device for preheating, and the preheating device comprises a temperature rising zone, a constant temperature zone and a cooling zone. Wherein, the temperature rising zone is used to heat the substrate from room temperature to between 590 and 620 ° C and hold the temperature for 5 to 8 minutes; the constant temperature zone is used to hold the substrate between 590 and 620 ° C for about 30 to 40 seconds; The cooling zone is used to cool the substrate to between 400 and 500 °C. In the step (d): the annealing temperature of the annealing treatment is lowered from 500 to 620 ° C to 250 to 400 ° C.

According to a feature of the present invention, the cooling zone of the step (b) and the annealing process of the step (d) comprise: a first reaction zone, and an exhaust treatment by the exhaust unit; the first buffer is set in the first After a reaction zone, heat treatment is performed by using the first heater and the second heater; the second reaction zone is disposed after the first buffer zone, and is exhausted by the exhaust unit; and the second buffer zone is disposed in the second reaction After the zone, heat treatment is performed by using the first heater and the second heater; the third reaction zone is disposed after the second buffer zone, and is exhausted by the exhaust unit; the third buffer zone is disposed after the third reaction zone And heat treatment is performed by using the first heater and the second heater; the fourth reaction zone is disposed after the third buffer zone, and is exhausted by the exhaust unit.

The method for preparing a transparent conductive film of the present invention has the following effects:

1. By using a process method of a conductive film forming apparatus, using a raw material supply hole and a suction opening design, a continuous and uniform film can be formed over a large area;

2. The process method makes the front-end process and the back-end process of the film forming apparatus have more flexible selectivity and replaceability by setting the connecting elements, and has the advantages of saving the cost of the modified machine, thereby reducing the production cost. Purpose

3. The process method is an independent design of the detachable inlet and outlet gas structure, so that the film forming raw material supply pipe and the exhaust pipe of the conductive film forming device have the advantages of convenient disassembly and easy cleaning;

4. The process method is designed by the plating on the roller, which can easily remove the adhering matter attached to the roller during the process, and reduce the conductivity degradation caused by the unevenness of the film.

The above and other objects, features, and advantages of the present invention will become more apparent and understood.

While the invention may be embodied in various forms, the embodiments illustrated in the drawings It is not intended to limit the invention to the particular embodiments illustrated and/or described.

Referring to FIG. 1 , a method for manufacturing a transparent conductive film according to the present invention includes the following steps: Step 110: Please refer to FIG. 2 to provide a film forming apparatus 200; Step 120: provide a preheating device, a substrate 201 is placed in the preheating device for preheating; step 130: the starting material required to provide the transparent conductive film enters the film forming material supply unit, and the substrate 201 is transferred to the film forming chamber by the conveying device. Depositing a transparent conductive film layer to form a transparent conductive substrate; Step 140: providing an annealing device, transferring the transparent conductive substrate to the annealing device for annealing treatment by the conveying device; and Step 150: cooling the transparent conductive substrate.

Referring now to FIG. 2, it is a schematic structural view of the film forming apparatus 200 in step 110. The film forming apparatus 200 of the transparent conductive film includes a furnace body 210, a conveying device 220, a heater 230, a detachable inlet and outlet gas structure 240, a connecting member 250, and a connecting member 260.

The film forming operation is performed in the film forming chamber 211 in the furnace body 210. The film forming chamber 211 has a substrate input end 212 and a substrate output end 213 to facilitate input of the substrate 201 to be subjected to the film forming operation via the substrate input terminal 212 and output via the substrate output end 213. The furnace body 210 is provided with a heat insulating material to prevent heat loss of the furnace body 210. The heat insulating material can be, for example, a heat insulating cotton. As the substrate 201, glass, stainless steel, a flexible substrate, or the like can be used. Among them, it is preferable to use a glass substrate having a thickness of 2 to 5 mm, a minimum area of the substrate 201 of 600 mm × 600 mm, and a maximum area of 1300 mm × 2200 mm. The substrate 201 may also be a circular substrate having a diameter of 600 mm. That is, the area of the bottom portion of the film forming chamber 211 capable of carrying the substrate needs to be slightly larger than the area of the substrate, that is, between 600 mm × 600 mm and 1600 mm × 2400 mm. In addition, the transport device 220 includes a transport track 221, such as a crawler belt, for transporting the substrate 201 performing the film forming operation from the substrate input end 212 to the substrate output end 213. The conveyor 220 can utilize, for example, a roller conveyor 220 that includes a plurality of freely rollable rollers 222, a conveyor track 221 disposed about the rollers 222, and a roller drive. The roller drive is driven by the drive motor. The axles of these rollers are joined together by a joint. The coupling member can be, for example, a chain or a belt. The roller drive unit is coupled to the axle of one of the rollers 222 to drive all of the rollers 222 to rotate by the axle of the drive roller 222. When the drive motor is activated, the roller drive will drive all of the rollers 222 to rotate, whereby the rollers 222 drive the transport track 221 to transport the substrate 201 from the substrate input end 212 into the film forming chamber 211. The conveying device 220 further includes a control structure (not shown) to control the driving speed of the roller driving device, thereby controlling the rotation speed of the roller 222 to adjust the moving speed of the substrate 201 in the film forming chamber 211. In order to obtain a uniform transfer speed and not to damage the surface of the substrate 201 during transport, the design and material of the roller 222 is an important consideration. The material of the roller 222 is made of ceramics, and is preferably a material that can withstand high temperature and does not cause a large amount of heat and shrinkage due to high temperature and high temperature, such as cerium oxide, aluminum oxide, aluminum nitride, tantalum carbide, etc. But not limited to the above materials. Preferably, the roller 222 has a roller diameter of 55 mm, a rolling distance of 100 mm, and is made of an electroformed quartz roller. It should be noted that, in the process of the process, since the film forming material may also adhere to the roller 222, in the present invention, the roller 222 further includes a cloth coated with aluminum oxide, which can be easily attached to the roller 222 during the process. Attachment.

The heater 230 is disposed below the conveying device 220 and disposed in the furnace body 210 to heat the substrate 201 in the film forming chamber 211. The heaters 230 are independently disposed below the conveying device 220. That is, the rotation of the roller 222 does not drive the heater 230 to rotate, so that the substrate 201 is subjected to a film forming process under the condition that the heater 230 is uniformly heated.

The detachable inlet and outlet gas structure 240 is independently disposed above the film forming chamber 211 and faces the conveying device 220. The detachable inlet and outlet gas structure 240 includes a plate body 241 , a first locking element 242 , an exhaust unit 243 , a film forming material supply unit 244 , and a second heater 245 . The plate body 241 is preferably formed of a highly heat-resistant metal and is provided with a heat insulating material to isolate heat loss in the furnace body. The first locking element 242, for example, includes a combination of a screw 242a and a screw hole 242b. The screw hole 242b is disposed around the periphery of the plate body 241, and the plate body 241 is locked to the furnace body 210 by a screw 242a.

The exhaust unit 243 is disposed at one end of the plate body 241 and adjacent to the substrate output end 212 of the film forming chamber 211. Wherein, the exhaust unit 243 exhaust unit is a Clean dry air (CDA) system, and includes at least one exhaust pipe. Wherein each of the exhaust pipes has a gas flow control valve 320 located in the pipe, whereby a uniform pumping effect can be formed, and the exhaust pipes collectively have an exhaust opening 330. The air passage effect is generated in the film forming chamber 211 by the pumping of the pumping opening 330, so that the gas in the film forming chamber flows from the substrate input end 212 to the substrate output end 213 due to the extraction of the exhaust unit 243. . Therefore, when the substrate 201 is moved from the substrate input end 212 to the substrate output end 213, the film forming operation has been substantially completed. The suction opening 330 has a different design depending on the speed of the pumping amount, and the suction opening 330 has a strip-like structure in order to obtain a uniform pumping rate. In other embodiments, the suction opening 330 is in the shape of a hole. Wherein, the exhaust unit 243 includes at least one partition such that adjacent ones of the exhaust pipes have a pumping chamber, whereby the uniformity of the pumping can be further improved. The gas flow control valve 320 may be a ball valve or a butterfly valve.

Referring now to FIG. 3, the film forming material supply unit 244 includes a chamber 350 and a conduit for conveying the film forming material into the chamber 350. The chamber 350 further includes at least one vertically disposed partition for dividing the chamber 354 into at least two chambers 354a to further enhance the mixing uniformity of the film forming material. The raw material supply hole 352 may also be disposed on the side of the chamber 350 near the film forming material supply unit 244 instead of being located above or at the bottom of the chamber 350. Thereby, the film forming material is further stored at the bottom of the chamber 350 until the liquid level is higher than the material supply hole 352 and flows to the substrate 201 in the film forming chamber 211 to improve the uniformity of film formation. It should be noted that the material supply hole 352 may also be disposed on one side of the chamber 350 near the exhaust unit 243.

The design of the film forming material supply unit 244 is an important feature of the present invention. The material supply hole 352 and the suction opening 330 of the cavity of the film forming chamber 211 are arranged to increase the residence time of the process film forming material on the substrate 201, so that a continuous and uniform film can be formed over a large area. Therefore, the distance between the feeding port (raw material supply hole 352) and the air outlet (exhaust opening 330) is 1.5 meters at both the feeding position and the exiting position, which is particularly advantageous for the area of 1000 mm×1000. The process of the substrate above mm.

In addition, the detachable inlet and outlet gas structure further includes a heater 245 disposed in the plate body 241 and located between the exhaust unit 243 and the film forming material supply unit 244.

Referring now to Figures 1 and 4, FIG. 4 is a perspective side view of the film forming apparatus 200 in accordance with the present invention. The connecting elements 250, 260 are respectively disposed at the substrate input end 212 of the film forming apparatus 200 and the substrate output end 213. Among them, the film forming apparatus 200 includes a preheating device 400a. In step 120, the preheating device 400a further includes a temperature rising zone, a constant temperature zone, and a cooling zone. Wherein, the heating zone is used to heat the substrate 201 from room temperature to 590-620 ° C and hold the temperature for 5-8 minutes; the constant temperature zone is used to hold the substrate 201 between 590 and 620 ° C for about 30~ 40 seconds; the cooling zone is used to cool the substrate 201 to between 400 and 500 °C. The purpose of providing the preheating device 400a is that the substrate 201 has a preset temperature before it enters the film forming apparatus 200. The connecting member 260 is used to connect the film forming apparatus 200, such as the annealing apparatus 400b, so that the substrate 201 can be subjected to an annealing process after the film forming operation.

In step 130, the starting material required to provide the transparent conductive film enters the film forming material supply unit 244. The raw materials required for the transparent conductive film are sprayed onto the substrate 201 in a mist state, and the film forming raw materials are various starting materials constituting the film component, and include a fluorine-containing precursor and a tin-containing precursor, the fluorine-containing body. The precursor system is one of trifluoroethylene, hydrofluoric acid and ammonium fluoride; and the body before the tin is one of tin dichloride, tin trichloride and tin tetrachloride. In addition, the substrate 201 is transferred to the film forming chamber by the transport device 220 and a transparent conductive film layer is deposited to form a transparent conductive substrate. Among them, the delivery rate is between 0.2 and 5 m/min. In step 140, the annealing temperature of the annealing treatment is reduced from 500 to 620 ° C to 250 to 400 ° C and the conveying rate is between 0.2 and 5 m / min. Finally, in step 150, the transparent conductive substrate is subjected to a cooling process, and the transparent conductive substrate is taken out. The cooling treatment system comprises a hot air cooling section and a cold air cooling section, and in the hot air cooling section and the cold air cooling section, the conveying rate is between 0.2 and 5 m/min and 0.2 to 5 m/min, respectively.

Referring to FIG. 5, the cooling zone of step 120 and the annealing process of step 150 include: a first reaction zone 420, a first buffer zone 430, a second reaction zone 440, a second buffer zone 450, and a third reaction. A region 460, a third buffer 470, and a fourth reaction region 480.

The first reaction zone 420 is exhausted by the exhaust unit 243, and the exhaust gas volume of the exhaust gas treatment is about 300 L/min, the temperature of the heat treatment is maintained between 400 and 500 ° C, and the transport rate is 0.2. Between ~5 m/min; the first buffer zone 430 is disposed after the second reaction zone 440 and is heat treated by the first heater 230 and the second heater 245. The reason for setting the first buffer zone 430 is to prevent the gas injected by the second reaction zone 440 from being discharged by the exhaust unit 243 of the first reaction zone 420. In addition, the length of the first buffer zone 430 is between 2 and 3 m. The second reaction zone 440 is disposed after the first buffer zone 430, and the exhaust gas treatment is performed by the exhaust unit 243, and the exhaust gas volume of the exhaust gas treatment is about 300 L/min, and the temperature of the heat treatment is maintained at 400 to 500 ° C. The delivery rate is between 0.2 and 5 m/min. The second buffer zone 450 is disposed after the second reaction zone 440 and is heat treated by the first heater 230 and the second heater 245. The reason for setting the second buffer zone 450 is to prevent the gas injected by the second reaction zone 440 from being discharged by the exhaust unit 243 of the third reaction zone 460. In addition, the length of the second buffer 450 is between 2 and 3 m. The third reaction zone 460 is disposed after the second buffer zone 450, and is exhausted by the exhaust unit 243, and the exhaust gas volume of the exhaust gas treatment is about 300 L/min, and the temperature of the heat treatment is maintained at 400 to 500 ° C. The delivery rate is between 0.2 and 5 m/min. The third buffer zone 470 is disposed after the third reaction zone 460 and is heat treated by the first heater 230 and the second heater 245. The reason for setting the third buffer zone 470 is to prevent the gas injected by the third reaction zone 460 from being discharged by the exhaust unit 243 of the fourth reaction zone 480. In addition, the distance between the third buffer 470 is between 2 and 3 m. The fourth reaction zone 480 is disposed after the third buffer zone 470, and is exhausted by the exhaust unit 243. The exhaust gas volume of the exhaust gas treatment is about 300 L/min, and the temperature of the heat treatment is maintained between 400 and 500 ° C. The conveying rate is between 0.2 and 5 m/min.

<Example 1>

First, the glass substrate is treated with a degreasing agent to remove surface oil, and after washing with water, the degreaser is not left on the surface of the glass, and is kept clean. Next, an FTO transparent conductive film is deposited using the film forming apparatus of the present invention. Referring now to FIG. 4, wherein the heat treatment temperature of the first reaction zone, the second reaction zone, the third reaction zone, and the fourth reaction zone is between 500 ° C and the transfer rate is 0.5 m / min. The temperature of the heat treatment of the first buffer, the second buffer, and the third buffer is 500 °C. Next, annealing treatment at 500 ° C was performed for 1 hour and the temperature was lowered to room temperature. Finally, a continuous and uniform transparent conductive film having a light transmittance of 83% in the visible light region and a sheet resistance of 10 Ω/□ was obtained.

<Example 2>

Example 2 is substantially the same as the step of Example 1, the main difference is that the heat treatment temperature of the first reaction zone, the second reaction zone, the third reaction zone, and the fourth reaction zone is changed to 450 ° C and the transfer rate is changed to 1 m / Min; the heat treatment temperature of the first buffer, the second buffer, and the third buffer is 450 °C. Next, annealing treatment at 450 ° C was performed for 1 hour and the temperature was lowered to room temperature. Finally, a continuous and uniform transparent conductive film having a light transmittance of 81% in the visible light region and a sheet resistance of 11 Ω/□ was obtained.

<Example 3>

First, the glass substrate is treated with a degreasing agent to remove surface oil, and after washing with water, the degreaser is not left on the surface of the glass, and is kept clean. Next, an FTO transparent conductive film is deposited using the film forming apparatus of the present invention. Here, please refer to FIG. 5, which is a schematic diagram of the heat treatment process of the film forming apparatus of the present invention. Wherein the heat treatment A section is to place the substrate in the heating device, and the substrate is heated from room temperature to 590 ° C; the heat treatment B section is the temperature of the film formation reaction zone, and the substrate is transferred to the film forming chamber via the conveying device to maintain the constant temperature of 590 ° C. The C, D, and E sections are the temperatures of the annealing and cooling zones, and the substrate is transferred to the substrate annealing apparatus via the transfer device, the temperature is lowered from 590 ° C to 350 ° C; the D section temperature is maintained at 350 ° C; After the temperature has dropped to room temperature, the substrate can be taken out. Finally, a continuous and uniform transparent conductive film having a light transmittance of 80% in the visible light region and a sheet resistance of 15 Ω/□ was obtained.

<Example 4>

An FTO film was prepared by the film forming apparatus of the present invention, and a precursor solution was prepared using tin dichloride and ammonium fluoride. Among them, the type and conductivity characteristics of the fluorine are changed by changing the doping amount of fluorine. It is known from the results that fluorine enters the position of the substituted oxygen to generate free electrons, which reduces the sheet resistance to 10 Ω/□. However, when the fluorine doping amount is too high, it cannot occupy an appropriate position but is scattered in the structure to cause scattering. And cause the sheet resistance to increase by 30 Ω / □.

<Example 5>

In another embodiment, an FTO film is prepared using the film forming apparatus of the present invention, and a precursor solution is prepared using tin dioxide and trifluoroethylene. Among them, the resistance of the FTO film thickness is only slightly reduced, when the thickness reaches 500 nm, the resistance is 3.5 × 10 ^-4 Ωcm; the light transmittance will also decrease to 79% of the visible light with the increase of the thickness. The penetration rate, while the plasma wavelength shifts to a short wavelength as the thickness increases.

In summary, the method for manufacturing a transparent conductive film of the present invention has the following effects:

1. By using a process method of a conductive film forming apparatus, a continuous and uniform film can be formed over a large area by using a raw material supply hole and a suction opening design.

2. The process method makes the front-end process and the back-end process of the film forming apparatus have more flexible selectivity and replaceability by the arrangement of the connecting elements, and has the advantages of saving the cost of the modified machine, thereby reducing the production cost. The purpose.

3. The process method is an independent design of the detachable inlet and outlet gas structure, so that the film forming raw material supply pipe and the exhaust pipe of the conductive film forming device have the advantages of convenient disassembly and easy cleaning.

4. The process method is designed by the plating on the roller, which can easily remove the deposit on the roller during the process, and reduce the conductivity degradation caused by the unevenness of the film.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.

200. . . Film forming device

201. . . Substrate

210. . . Furnace body

211. . . Film forming chamber

212. . . Substrate input

213. . . Substrate output

221. . . Transport track

220. . . Conveyor

240. . . Removable inlet and outlet structure

222. . . Wheel

242. . . First locking element

230. . . Heater

242b. . . screw hole

241. . . Plate body

244. . . Film forming material supply unit

242a. . . Screw

330. . . Pumping opening

243. . . Exhaust unit

350. . . Room

245. . . Heater

353. . . Room

250, 260. . . Connecting element

354a. . . Room

320. . . Gas flow control valve

400a. . . Preheating device

352. . . Raw material supply hole

400b. . . Annealing device

354. . . Room

356. . . Partition

The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood.

1 is a flow chart showing a method of manufacturing a transparent conductive film in accordance with the present invention.

Figure 2 is a schematic view showing the structure of a film forming apparatus according to the present invention.

Figure 3 is a schematic cross-sectional view showing the film forming material supply unit in accordance with the present invention.

Figure 4 is a perspective side view showing a film forming apparatus in accordance with the present invention.

Figure 5 is a flow chart showing the cooling zone and annealing treatment in accordance with the present invention.

Figure 6 is a schematic view showing a heating curve of a film forming apparatus according to another embodiment of the present invention.

Claims (11)

A method for manufacturing a transparent conductive film, the method comprising the steps of: (a) providing a film forming apparatus comprising: a furnace body; a film forming chamber extending transversely through the furnace body, the film forming chamber having a substrate input end and a a substrate output end, and a bottom area of the film forming chamber is between 600 mm × 600 mm and 1600 mm × 2400 mm; a conveying device having a conveying track penetrating the film forming chamber; a first heater, setting Under the transport track; and a detachable inlet and outlet structure disposed above the film forming chamber and facing the conveying device, the detachable inlet and outlet structure comprises: a plate body; a first locking component surrounding The plate body is configured to lock the plate body to the furnace body; an exhaust unit is disposed at one end of the plate body and adjacent to the substrate output end of the film forming chamber; a film forming material supply unit is disposed a substrate input end of the plate body opposite to the other end of the exhaust unit and adjacent to the film forming chamber; and a second heater disposed in the plate body and located at the exhaust unit and the Between the membrane raw material supply units; (b) providing a preheating device Preheating a substrate in the preheating device, the preheating device comprising a temperature rising zone, a constant temperature zone and a cooling zone; wherein the heating zone heats the substrate from room temperature to 590 to 620 ° C And maintaining the temperature for 5-8 minutes; the constant temperature zone holds the substrate at 590~620 ° C for 30-40 seconds; the cooling zone cools the substrate to between 400 and 500 ° C; (c) Providing a raw material required for a transparent conductive film into the film forming material supply unit, and transferring the substrate to the film forming chamber to deposit a transparent conductive film layer to form a transparent conductive substrate; (d) Providing an annealing device, wherein the transparent conductive substrate is transferred to the annealing device for annealing treatment, and the annealing temperature is lowered from 500 to 620 ° C to 250 to 400 ° C; and (e) the transparent conductive substrate Perform a cooling process. The method for manufacturing a transparent conductive film according to claim 1, wherein the conveying device of the step (a) is a roller conveying device. The method for manufacturing a transparent conductive film according to claim 1, wherein the exhaust unit of the step (a) is a Clean dry air (CDA) system. The method for preparing a transparent conductive film according to claim 1, wherein the raw material required for the transparent conductive film of the step (c) comprises a fluorine-containing precursor and a tin-containing precursor, the fluorine-containing precursor It is one of trifluoroethylene, hydrofluoric acid and ammonium fluoride; and the body before the tin is one of tin dichloride, tin trichloride and tin tetrachloride. The process for producing a transparent conductive film according to claim 1, wherein in the steps (c) and (d), the conveying rate of the conveying device is between 0.2 and 5 m/min. The method for manufacturing a transparent conductive film according to claim 1, wherein the cooling zone of the step (b) and the annealing process of the step (d) comprise: a first reaction zone, which is performed by the exhaust unit a first buffer zone, disposed after the first reaction zone, and performing a heat treatment with the second heater by the first heater; a second reaction zone disposed in the first buffer zone Thereafter, the exhausting process is performed by the exhaust unit; a second buffer zone is disposed after the second reaction zone, and the first heater and the second heater are used for the heat treatment; a third reaction And after the second buffer zone is disposed, the exhausting process is performed by the exhaust unit; a third buffer zone is disposed after the third reaction zone, and the first heater and the second heating are used The heat treatment is performed; and a fourth reaction zone is disposed after the third buffer zone, and the exhaust gas treatment is performed by the exhaust unit. The method for preparing a transparent conductive film according to claim 6, wherein the exhaust gas amount of the exhaust gas treatment in the first reaction zone, the second reaction zone, the third reaction zone, and the fourth reaction zone is about 300 L /min. The method for manufacturing a transparent conductive film according to claim 6, wherein the temperature of the heat treatment of the first buffer zone, the second buffer zone, the third buffer zone and the fourth reaction zone is maintained at 400 to 500 ° C between. The method for manufacturing a transparent conductive film according to claim 6, wherein the length of the first buffer, the second buffer, and the third buffer is between 2 and 3 m. The method for manufacturing a transparent conductive film according to claim 1, wherein the cooling treatment of the step (e) comprises a hot air cooling section and a cold air cooling section. The method of manufacturing a transparent conductive film according to claim 10, wherein the conveying speed of the conveying device of the hot air cooling section and the cold air cooling section is between 0.2 and 5 m/min.