•201203704 六、發明說明： 【發明所屬之技術領域】 本發明係關於以彳了動電話或PDA ( Personal Digital Assistants)等 的攜帶型機器爲首，適用於對應於無線LAN( Local Area Network) 的個人電腦、遊戲機器、家電機器等之晶片天線，詳細上 是關於對應於複數個不同的頻帶之多頻帶晶片天線》 【先前技術】 作爲組裝在行動電話等的攜帶型機器之天線，已知習 知一般既小型又高性能之晶片天線（例如，參考日本專利 文獻1、2、3)。此種晶片天線係在由介電率大的介電體所 組成之基體的表面，以適當的圖案，形成由銀合金等所組 成之天線元件者，具有既超小型又高性能的特徵。 此處，日本專利文獻1中記載，在由介電體所組成之 基體的表面形成共振頻率不同的2個供電放射元件（天線 元件）之天線裝置（晶片天線）。此天線裝置係藉由對於 2個天線元件設置具備共同的供電點之短柱，進行各天線 元件的阻抗匹配。 另外，日本專利文獻2中記載，從相同的供電點分歧 之2個天線元件（antenna element)以薄膜形成在支撐基材（基 體）上之天線裝置（晶片天線）。此天線裝置係藉由具有 2個電路元件之匹配電路，進行各天線元件的阻抗匹配。 再者，日本專利文獻3中記載，在2個天線元件分別 形成蛇行部之介電體天線（晶片天線）。 -4- 201203704 〔先前技術文獻〕 .〔專利文獻〕 〔專利文獻1〕 日本專利特開2 0 0 2 - 3 1 4 3 3 0號公報 〔專利文獻2〕 日本專利特開2007 - 2 1 4961號公報 〔專利文獻3〕 日本專利特開2002 - 1 009 15號公報 【發明內容】 〔發明所欲解決之課題〕 然而，日本專利文獻1至3所記載之習知的晶片天線 均爲天線長度不同的2個天線元件對應於2個不同的頻率 者，3個以上的頻率則無法對應。 於是，本發明的課題爲提供可對應於至少3個不同的 頻帶之多頻帶晶片天線。 〔用以解決課題之手段〕 爲了要解決這個課題，第1項發明之多頻帶晶片天 線，係在由介電體所組成的單一之基體的表面形成天線元 件之晶片天線，其特徵爲：天線元件，其具有從共同的供 電部分歧成2個部分而延伸之第1天線元件部和第2天線 元件部、從第1天線元件部的中途分歧而延伸之第3天線 元件部、及從第2天線元件部的中途分歧而延伸之第4天 線元件部，第1至第4的各天線元件部的元件長度，係分 別對應於不同的頻帶而設定。 第1項發明之多頻帶晶片天線中，第1至第4的各天 線元件部的元件長度，係分別對應於不同的頻帶而設定， 201203704 故成爲可在4個不同的頻帶通訊。 第1項發明之多頻帶晶片天線，可以構成爲當以升序 將第1至第4的各天線元件部對應的頻帶設爲fi至f4時， 第1天線元件部對應於Π，第2天線元件部對應於f4，第 3天線元件部對應於f3，第4天線元件部對應於f2。 在此情況，可以在基體的上面相互對向的方式，形成 對應於最低的頻帶fl之元件長度長的第1天線元件部之放 射端部、及對應於最高的頻帶f4之元件長度短的第2天線 元件部之放射端部，與這些平行地，以在基體的上面相互 對向的方式，形成對應於第2低的頻帶f2之元件長度長的 第4天線元件部之放射端部、及對應於第2高的頻帶f3之 元件長度短的第3天線元件部之放射端部。 第2項發明之多頻帶晶片天線，係在由介電體所組成 之基體的表面形成天線元件之晶片天線，其特徵爲：天線 元件，係具備從共同的供電點分歧成至少2個部分而延伸 之天線元件部，在天線元件部的至少其中一方，以基本波 的頻率與高諧波的頻率接近的方式，以既定的對向間隔， 設置具有既定的靜電電容之蛇行部，作爲並聯共振電路的 等價靜電電容部。 第2項發明之多頻帶晶片天線中，因對應於天線元件 的至少其中一方之天線元件部的並聯共振電路之基本波的 頻率與高諧波的頻率接近，故成爲可在其中一方的天線元 件部之基本波的頻率與高諧波的頻率、及另一方的天線元 201203704 件部之基本波的頻率的至少3個頻帶進行通訊。在此情 況，相較於將天線長度不同的3個天線元件形成在基體的 情況，容易成爲基體的小型化。 第2項發明之多頻帶晶片天線，較佳爲天線元件部之 蛇行部的對向間隔爲0.1至〇.3mm，可以使天線元件部之並 聯共振電路的等價電感量減少，使靜電電容增大’並可以 直到基本波的頻率的1.2至1.5倍程度爲止使高諧波的頻率 接近。 另外，第2項發明之多頻帶晶片天線’基體較佳爲由 介電率ε爲3至20的介電體塑膠所構成。在此情況，可以 藉由因應於介電率ε的波長縮短效果，能夠縮短各天線元 件部的長度，因應於此而容易將基體小型化。 第3項發明之多頻帶晶片天線，係在由介電體所組成 之基體的表面形成對應於至少3個共振頻帶的複數個天線 元件之晶片天線，其特徵爲：具備從共同的供電點供電於 各天線元件之供電電路，在此供電電路設置阻抗匹配用的 LC電路。 第3項發明之多頻帶晶片天線中，被設置在具有共同 的供電點的供電電路之LC電路對應於至少3個共振頻帶而 將其阻抗匹配。 第3項發明之多頻帶晶片天線，各天線元係可以從共 同的供電點分歧成2個系統，其被分歧之丨個系統的天線 元件，經由LC電路，相互並聯連接之構成。在此情況，較 201203704 佳爲頻率低的1個天線元件、及頻率高的2個天線元件分 歧成2個系統，其頻率高的2個天線元件’經由LC電路， 相互並聯連接之構成。 第1至第3項發明之多頻帶晶片天線，基體較佳爲由 介電率ε爲3至20的介電體塑膠所構成。在此情況，可以 藉由因應於介電率ε之波長縮短效果，能夠縮短各天線元 件部的長度，因應於此，容易將基體小型化。 〔發明效果〕 依據第1項發明之多頻帶晶片天線，因第1至第4的 各天線元件部的元件長度，係分別對應於不同的頻帶而設 定，故成爲可在4個不同的頻帶通訊。 第1項發明之多頻帶晶片天線，在當以升序將第1至 第4的各天線元件部對應的頻帶設爲Π至f4時，第1天線 元件部對應於Π，第2天線元件部對應於f4，第3天線元 件部對應於f3，第4各天線元件部對應於f2的情況，可以 在基體的上面相互對向的方式，形成對應於最低的頻帶Π 之元件長度長的第1天線元件部之放射端部、及對應於最 高的頻帶f4之元件長度短的第2天線元件部之放射端部。 另外，在此情況，可以與第1天線元件部之放射端部 及第2天線元件部之放射端部平行地，以在基體的上面相 互對向的方式，形成對應於第2低的頻帶f2之元件長度長 的第4天線元件部之放射端部、及對應於第2高的頻帶f3 之元件長度短的第3天線元件部之放射端部。 201203704 依據這種構成的多頻帶晶片天線，成爲可極力減小基 體的上面的面積而將基體小型化，能有助於多頻帶晶片天 線的小型化。 依據第2項發明的多頻帶晶片天線，成爲可在天線元 件的至少其中一方的天線元件部之基本波的頻率與高諧波 的頻率、及另一方的天線元件部之基本波的頻率的至少3 個頻帶進行通訊。在此情況，相較於將天線長度不同的3 個天線元件形成在基體的情況，容易使基體小型化。 依據第3項發明的多頻帶晶片天線，因被設置在具有 共同的供電點的供電電路之LC電路對應於至少3個共振頻 帶而將其阻抗匹配，故可以在至少3個共振頻帶獲得良好 的阻抗特性。其結果，成爲可在至少3個共振頻帶進行良 好的通訊。 第1至第3項發明之多頻帶晶片天線，在由介電率ε 爲3至20的介電體塑膠構成基體的情況，藉由因應於基體 的介電率ε之波長縮短效果，能夠縮短各天線元件部的長 度，因應於此，可容易將基體小型化。 【實施方式】 〔用以實施發明的形態〕 以下，參考附圖來說明第1項至第3項發明之多頻帶 晶片天線的實施形態。 〔第1實施形態〕 對應於第1項發明的第1實施形態之多頻帶晶片天 201203704 線’係可組裝在下一代行動電話等的攜帶型機器之既小 型、高性能之多頻帶晶片天線，功能上作爲以例如900MHz 頻帶' 1.5 GHz頻帶、2.1GHz頻帶、2.4GHz頻帶爲共振頻帶 之1/4波長單極天線。 如第1圖所示，在其一例中，第1實施形態的多頻帶 晶片天線10係具備由形成爲長度20mm、寬度20mm、厚度 5mm程度的塊體狀之介電體塑膠所組成之單一的基體1 1。 在此基體11的周面及表面，形成在4個不同的頻帶共振之 天線元件1 2。另外，在基體1 1的下面，形成用來供電於天 線元件1 2之單一的供電部1 3、及用來將多頻帶晶片天線 10安裝在裝備基板（未圖示）上之焊盤部14。 構成基體11之介電體塑膠，係由混合高介電率的陶 瓷、聚苯硫醚樹脂（PPS )、及液晶聚合物（LCP )之複合 材料所組成，具備適於精密成形之尺寸穩定性及對焊料的 耐熱性，並且具備介電率ε爲3至20的範圍之高介電性。 天線元件12、供電部1 3、焊盤部14係由將銅、鎳、 銀合金等適當的導電性金屬材料所組成之鍍層以進行圖案 成形爲既定形狀而形成。 如第1圖及第2圖所示’天線元件丨2具有從共同之單 —的供電部13分歧成2個部分而延伸之第1天線元件部 12Α和第2天線元件部12Β、從第1天線元件部12Α的中途 分歧而延伸之第3天線元件部1 2C '及從第2天線元件部 12Β的中途分歧而延伸之第4天線元件部12D。 -10- 201203704 第1圖 面中央 曲而呈 的右側 部側端 I 1 1的 案所形 頻帶的 I 11的 長（本 12A中 分歧而 到基體 、從其 而臨接 ;成。 帶之頻 1 1的介 (本例 第1天線元件部12A係由具有連續於被形成在 所示之基體11的下面之供電部13而在基體11的前 部附近豎立的部分、從其上端部於右側略直角地彎 直線狀延伸的部分、連續於其右端部而直到基體11 面之內部側附近爲止呈直線狀延伸的部分、從其內 部於上方豎立的部分、及連續於其上端部而直到基骨 上面之左側附近爲止呈直線狀延伸的放射端部之圖 成。 此第1天線元件部12A係對應於例如900MHz 頻帶Π者，從供電部13起的元件長度係因應於基f 介電率ε ，而設定在900MHz頻帶之頻率的1/4波 例子爲約83mm)程度。 第2天線元件1 2B係由具有從第1天線元件部 在基體11的前面中央部附近豎立的部分之上端部 於左側呈直線狀延伸的部分、連續於其左端部而直 1 1的左側面之內部側附近爲止呈直線狀延伸的部分 內部側端部於上方豎立的部分、及連續於其上端部 於基體11的上面之左側附近的放射端部之圖案所形 此第2天線元件部12B係對應於例如2.4GHz頻 帶f4者，從供電部13起的元件長度係因應於基體 電率ε，而設定在2.4GHz頻帶之頻率的1/4波長 子爲約31mm )程度。 第3天線元件部1 2C由具有從第1天線元件部12A中 201203704 基體11的右側面上之呈直線狀延伸的部分之跟前側附近 分歧而於上方豎立的部分、及連續於其上端部而面臨於基 體11的上面之右側附近的放射端部之圖案所形成。 此第3天線元件部12C係對應於例如2.1GHZ頻帶之頻 帶f3者，從供電部13起的元件長度係因應於基體11的介 電率e ，而設定在2.1GHz頻帶之頻率的1/4波長（本例 子爲約36mm)程度。 第4天線元件部12D係由具有從第2天線元件部12B 中基體1 1的左側面上之呈線狀延伸的部分之跟前側附近 分歧而於上方豎立的部分、及連續於其上端部而直到基體 11的上面之右側附近爲止呈直線狀延伸的放射端部之圖案 所形成。 此第4天線元件部1 2D係對應於例如1. 5 GHz頻帶之頻 帶f2者，從供電部13起的元件長度係因應於基體11的介 電率ε ，而設定在1.5GHz頻帶之頻率的1/4波長（本例 子爲約50mm)程度。 此處，對應於最低的頻帶fl ( 900MHz頻帶）的第1 天線元件部12A之放射端部、與對應於最高的頻帶f4 (2.4 GHz頻帶）的第2天線元件部12B之放射端部，在基 體11的上面相互隔著既定的間隔相對向。另外，與這些放 射端部平行地，對應於第2低的頻帶f2 ( 1.5GHz頻帶）的 第4天線元件部12D之放射端部、與對應於第2高的頻帶 f3 ( 2.1GHz頻帶）的第3天線元件部12C之放射端部’在 -12- .201203704 基體1 1的上面相互隔著既定的間隔相對向。 第3圖爲顯示第2圖所示的天線元件12之等價電路。 此處，對應於900MHz頻帶的頻帶Π之第1天線元件12A 係將其路徑之各部位的阻抗設爲211、212、213，以使從 供電部13來看的阻抗成爲50Ω的方式，又以使路徑之各部 位的長度Ln、L12、L13.合計成爲1/4波長的長度的方式， 適當改變路徑之各部位的寬度及長度尺寸而設定。 對應於2.4GHz頻帶的頻帶f4之第2天線元件部12B 係將其路徑之各部位的阻抗設爲Z21、Z22、Z23，以使從 供電部13來看的阻抗成爲50Ω的方式，又以使路徑之各部 位的長度1^21、1^2 2、1^23合計成爲1/4波長的長度的方式， 適當改變路徑之各部位的寬度及長度尺寸而設定。 對應於2.1GHz頻帶的頻帶f3之第3天線元件部12C 係將其路徑之各部位的阻抗設爲Z 1 1、Z 1 4，以使從供電部 13來看的阻抗成爲50Ω的方式，又以使路徑之各部位的長 度Lll、L14合計成爲1/4波長的長度的方式，適當改變 路徑之各部位的寬度及長度尺寸而設定。 對應於1.5GHz頻帶的頻帶f2之第4天線元件部12D 係將其路徑之各部位的阻抗設爲Z21、Z24，以使從供電部 13來看的阻抗成爲50Ω的方式，又以使路徑之各部位的長 度L21、L24合計成爲1/4波長的長度的方式，適當改變 路徑之各部位的寬度及長度尺寸而設定。 如同以上所構成之第1實施形態的多頻帶晶片天線i 〇 -13- 201203704 係組裝在攜帶型機器的裝備基板（未圖示），藉由使天線 元件12中第1天線元件部12A、第2天線元件部12B、第 3天線元件部12C和第4天線元件部12D功能上分別作爲 單極天線，成爲可在900MHz頻帶、1.5GHz頻帶、2.1GHz 頻帶' 2.4GHz頻帶通訊。 然則，第1實施形態的多頻帶晶片天線1 0中共振頻率 Π至f4的S11特性（回波損耗R.L)，成爲如同第4圖的 圖形所示，在頻帶fl ( 900MHz頻帶）、頻帶f2 ( 1.5GHz 頻帶）、頻帶f3 ( 2.1GHz頻帶）及頻帶f4 ( 2.4GHz頻帶） 成爲反射最少之良好的共振狀態。 此處，第1實施形態的多頻帶晶片天線1 0係對應於最 低的頻帶fl ( 900MHz頻帶）的第1天線元件部12A之放射 端部、及對應於最高的頻帶f4( 2.4 GHz頻帶）的第2天線 元件部12B之放射端部，在基體11的上面相互隔著既定的 距離相對向，與這些放射端部平行地，對應於第2低的頻 帶f2 ( 1.5GHz頻帶）的第4天線元件部12D之放射端部、 與對應於第2高的頻帶f3 ( 2.1GHz頻帶）的第3天線元件 部12C之放射端部，在基體11的上面相互隔著既定的間隔 相對向。 因此，第1實施形態的多頻帶晶片天線10，成爲可極 力減小基體的上面的面積而將基體11小型化，有助於多頻 帶晶片天線1 0小型化。 第1項發明的多頻帶晶片天線並不侷限於前述過的第 -14 - 201203704 1實施形態，例如構成多頻帶晶片天線10之基體11的形 狀，並不受限於如同第1圖所示的塊體狀，也可以是角型 剖面的棒狀。 另外，天線元件12中各個第1天線元件部12Α至第4 天線元件部12D之各部位的寬度尺寸，可以設爲在第1天 線元件部12Α至第4天線元件部12D的各個對應的頻帶成 爲最良好的阻抗特性之適當的寬度尺寸。 〔第2實施形態〕 對應於第2項發明之第2實施形態的多頻帶晶片天線 20，係可組裝在下一代行動電話等的攜帶型機器之既小 型、高性能之多頻帶晶片天線，功能上作爲以例如1.5 GHz 頻帶、2.1GHz頻帶爲基本波的頻率之1/4波長單極天線。 如第5圖所示，在其一例中，第2實施形態的多頻帶 晶片天線20係具備由形成爲長度20mm、寬度5mm、厚度 5 mm程度的塊體狀之介電體塑膠所組成之基體21。此外， 此基體21的形狀並不受限於如同圖示的塊體狀，也可以是 角型剖面的棒狀。 構成基體21之介電體塑膠，係由混合高介電率的陶 瓷、聚苯硫醚樹脂（PPS )、及液晶聚合物（LCP)之複合 材料所組成，具備適於精密成形之尺寸穩定性及對焊料的 耐熱性，並且具備介電率ε爲3至20的範圍之高介電性。 在基體21的周面及上面，形成將2個不同的拱振頻率 f1、Π作爲基本波的頻率，將與這些不同的共振頻率f3、 -15- 201203704 f4作爲高諧波的頻率之天線元件22。另外，在基 下面，形成用來供電於天線元件22之單一的供電 用來將多頻帶晶片天線20安裝在裝備基板（未圖 焊盤部24。 天線元件22、供電點23、焊盤部24係將由 銀合金等適當的導電性金屬材料所組成之鍍層以 成形爲既定形狀而形成。作爲爲此的基底處理， 面預先施予珠粒噴擊。 此處，顯示鍍層圖案成形的一個例子，在施 噴擊之基體21的表面全面形成鍍層之後，藉由遮 射出成形或光鈾刻將圖案成形的部分進行遮罩。 以適當的手段除去不要部分的鍍層後，藉由以適 除去遮罩材料，將鍍層圖案成形爲既定形狀。此 以取代此手法，藉由雷射光線的照射除去基體11 層的不要部分，將鍍層圖案成形爲既定形狀》 如第5圖及第6圖所示，天線元件J2具有從 形成在基體21的下面之單一的供電點23之基端 分歧成2個部分而延伸之第1天線元件部22A及 元件部2 2 B。 第1天線元件部22A係橫跨到基體21的右孭 側面及右側上面而形成，在從右側前面橫跨到右 分以相互接近平行地延伸而形成具有既定的靜電 行部22C、22D。另外，在右側上面以相互接近平 體21的 點23、及 示）上之 銅、鎳、 進行圖案 在基體上 予過珠粒 罩材料的 然後，在 當的手段 外，也可 之全面鑛 連續於被 部向左右 第2天線 J前面、右 側面的部 電容之蛇 行地延伸 16 - 201203704 而形成具有既定的靜電電容之蛇行部22E、22F。 第2天線元件部22B係橫跨到基體2 1的左側前面、左 側面及左側上面而形成，在左側面形成相互接近平行地延 伸而具有既定的靜電電容之蛇行部22G、22H。 此處，第1天線元件部22A係以例如1.5GHz頻帶成爲 基本波的頻率fl，2.4GHz頻帶成爲高諧波的頻率f3的方 式，其長度及寬度設定成適當的尺寸，又分別在本例子中， 其蛇行部22C與蛇行部22D的對向間隔C1、蛇行部22E與 蛇行部22F的對向間隔C2，設定成0.1至0.3mm範圍之適 當的間隔。 如此，以圖案形成第1天線元件部22A，如第7 ( a ) 圖所示，第1天線元件部22A所具有之並聯共振電路的電 感成分L1’變化成L1，靜電電容成分C1’變化成C1。 藉此，第1天線元件部22A則如第8 ( a)圖所示，基 本波的頻率從虛線所示之Π’變化成實線所示的Π，高諧波 的頻率從虛線所示之f3’變化成實線所示的f3。其結果，成 爲基本波的頻率fl與高諧波的頻率f3接近（LlxCl) =，（L 1 ’ X C 1 ’））。 另一方面，第2天線元件部22B係以例如2.1 GHz頻帶 成爲基本波的頻率f2，3.5GHz頻帶成爲高諧波的頻率Μ 的方式，其長度及寬度設定成適當的尺寸，又在本例子中， 其蛇行部22G與蛇行部22Η的對向間隔C3，設定成〇.1至 0.3mm範圍之適當的間隔》 -17- 201203704 如此，以圖案形成第2天線元件部22B，如第7 ( b ) 圖所示，第2天線元件部22B所具有之並聯共振電路的電 感成分L2’變化成L2，靜電電容成分C2’變化成C2。 藉此，第2天線元件部22B則如第8 ( b )圖所示，基 本波的頻率從虛線所示之f 2 ’變化成實線所示的f 2，高諧波 的頻率從虛線所示之f4’變化成實線所示的f4。其結果，成 爲基本波的頻率f2與高諧波的頻率f4接近（L2xC2) ='(L2，xC2,））。 如同以上所構成之第2實施形態的多頻帶晶片天線20 係組裝在攜帶型機器的裝備基板（未圖示），以使天線元 件22中第1天線元件部22A及第2天線元件部22B可在相 互不同的4個共振頻率Π至f4通訊》 即是多頻帶晶片天線20成爲可在天線元件22中對應 於第1天線元件部22A的並聯共振電路之基本波的共振頻 率fl( 1.5GHz頻帶）和高諧波的共振頻率f3( 2.4GHz頻帶）、 及對應於第2天線元件部22B的並聯共振電路之其他基本 波的共振頻率f2(2_l GHz頻帶）和其他高諧波的共振頻率 f4 ( 3.5GHz頻帶）通訊。 然則，第2實施形態的多頻帶晶片天線20中共振頻率 Π至f4的S11特性（回波損耗R.L)，如同第9圖的圖形 所示’在共振頻率fl( 1.5GHz頻帶）、共振頻率f2( 2.1GHz 頻帶）、共振頻率f3( 2.4GHz頻帶）及共振頻率f4( 3.5GHz 頻帶）成爲_20dB程度，成爲反射少之良好的共振狀態。 •18· 201203704 此處，第2實施形態的多頻帶晶片天線20係因藉由天 線長度不同的第1天線元件部22A及第2天線元件部22B 可以對應於相互不同的4個共振頻率Π至f4，故可以相較 於如同習知例子形成天線長度不同的至少4個天線元件的 情況而將基體2 1小型化，能有助於多頻帶晶片天線20的 小型化。 第2項發明的多頻帶晶片天線並不侷限於前述過的第 2實施形態。例如，形成在基體21的表面之天線元件22 的圖案係只要具備具有對應於高諧波的共振頻率的靜電電 容之蛇行部，即可變更成與第5圖及第6圖所示的圖案不 同之圖案。 另外，也可以天線元件22的第1天線元件部22A構成 爲將1.5 GHz頻帶作爲基本波的共振頻率Π，將2.1GHz頻 帶作爲高諧波的共振頻率f2，並且第2天線元件部22B構 成爲將2.4 GHz頻帶作爲基本波的共振頻率f3，將3.5GHz 頻帶作爲高諧波的共振頻率f4。 同樣地，也可以天線元件22的第1天線元件部22A構 成爲將1.5GHz頻帶作爲基本波的共振頻率Π，將3.5GHz 頻帶作爲高諧波的共振頻率f4，並且第2天線元件部22B 構成爲將2.1GHz頻帶作爲基本波的共振頻率f2,將2.4GHz 頻帶作爲高諧波的共振頻率f4。 再者，第2實施形態的多頻帶晶片天線20可通訊的頻 帶之1.5GHz頻帶、2.1GHz頻帶、2.4GHz頻帶、3.5GHz頻 -19- 201203704 帶，畢竟不過是一個例子而已，可以變更成適當的頻帶。 〔第3實施例〕 對應於第3項發明的第3實施形態之多頻帶晶片天 線，係可組裝在下一代行動電話等的攜帶型機器之既小 型、高性能之多頻帶晶片天線。 如第10圖所示，第3實施形態的多頻帶晶片天線30 係具備供電於此天線之供電電路40。多頻帶晶片天線30 配置在裝備基板（未圖示）上，供電電路40構成在裝備基 板（未圖示）上。 多頻帶晶片天線30係具有在由介電體塑膠所組成之 基體3 1的表面形成由鍍層所組成的天線元件32至35之構 造’成形爲例如長度12.Ox寬度5.Ommx高度3.0mm程度的 塊體狀。 構成基體31的介電體塑膠，係由混合高介電率的陶 瓷、聚苯硫醚樹脂（PPS )、及液晶聚合物（LCP)之複合 材料所組成，具備介電率ε爲3至20的範圍之高介電性。 另一方面，天線元件12至15係將由銅、鎳、銀合金等的 導電性金屬材料所組成之鍍層以進行圖案形成爲既定形狀 而形成。 供電電路40係具備經由調諧用電感器L 1將多頻帶晶 片天線30之天線元件32的基端側連接至供電源4 1之天線 元件3 2、將多頻帶晶片天線3 0之天線元件3 3的基端側連 接至供電源4 1之天線元件43、經由調諧用電感器L2將多 -20- 201203704 頻帶晶片天線30之天線元件34的基端側、連接至供電源41 之天線元件44、及將多頻帶晶片天線30之天線元件33的 前端側連接至天線元件3 5之天線元件4 5。 從供電源41往天線元件42和天線元件32延伸之第1 系統的天線元件係功能上作爲以例如900MHz頻帶爲共振 頻率Π之單極天線者，因此設置在天線元件42間之調諧 用電感器L1，電感設定在例如12.0nH。 從供電源41往天線元件43、天線元件3 3、天線元件 45、天線元件35延伸之第2系統的天線元件係功能上作爲 以例如1 . 5 GHz頻帶爲共振頻率f 2之單極天線者。此第2 系統的天線元件具有2.4GHz頻帶的共振頻率f4，作爲 1.5 GHz頻帶的共振頻率f2之高頻成分。此外，天線元件 45係形成在裝備基板（未圖示）的背面，作爲寬度〇.35mm 1呈度的並聯放射電極圖案。 從供電源4 1往天線元件4 4和天線元件3 4延伸之第3 系統的天線元件係功能上作爲以例如2.0 GH z頻帶爲共振 頻率f3之單極天線者，因此設置天線元件4 3間之調諧用 電感器L2，電感設定在例如2.7nH。 此處，構成第1系統的天線元件之天線元件42、及構 成第2系統的天線元件之天線元件43係從供電源4 1所構 成共同的供電點P0分歧。另外，構成第2系統的天線元件 之天線元件43、及構成第3系統的天線元件之天線元件44 係從共同的供電點P 〇與調諧用電感器L 2之間的分歧點P 1 •21- 201203704 分歧。 然後，在這種供電電路4.〇設置對應於第1系統至第 系統的天線元件所構成共振頻率fl至f4之阻抗匹配用 LC電路。即是如第10圖至第12圖所示’設置匹配用電 器C0在共同的供電點P〇與分歧點P1之間中，設置匹配 電感器L0在供電點P與接地之間中。匹配用電容器co 電容設定在例如2.OpF，匹配用電感器L0的電感設定在 如 2.2nH。 第11圖及第12圖爲顯示第10圖所示之多頻帶晶片 線30的等價電路。在天線元件32與天線元件34之間形 構成靜電電容部之圖案C1，在天線元件32與天線元件 之間形成構成靜電電容部之圖案C2，在天線元件33與 線元件35之間形成構成靜電電容部之圖案C3 ° 如同以上所構成之第3實施形態的多頻帶晶片天 30,組裝在攜帶型機器（未圖示），藉由天線元件32至 及裝備基板（未圖示）上的由天線元件42至45所組成 第1系統至第3系統的天線，功能上分別作爲單極天線 成爲可進行以900MHz頻帶、1.5GHz頻帶、2.0GHz頻帶 2.4GHz頻帶爲共振頻率之通訊。 此處，第3實施形態的多頻帶晶片天線30係在供電 天線元件32至35之供電電路40，具備構成阻抗匹配用 LC電路之匹配用電容器c〇及匹配用的電感器L0。然後 藉由進行這些包括多頻帶晶片天線30的天線元件32至 的 容 用 的 例 天 成 33 天 線 35 之 於 的 -22- 35 201203704 的第1系統至第3系統之天線元件的阻抗匹配，在共振頻 帶fl (900MHz頻帶）、共振頻帶f2(1.5GHz頻帶）、共 振頻帶f3 ( 2.0GHz頻帶）及共振頻帶f4 ( 2.4GHz頻帶）， 確保良好的阻抗特性。 然則，第3實施形態的多頻帶晶片天線30中共振頻率 Π至f4的S11特性（回波損耗R.L)，成爲如第13圖的曲 線所不。即是在共振頻率fl (900MHz頻帶）、共振頻率 f2 ( 1.5GHz頻帶）、共振頻率f3 ( 2_0GHz頻帶）及共振頻 率f4 ( 2.4GHz頻帶）的S11特性，成爲—15dB程度，獲得 反射少之良好的共振狀態》 對此，如第14圖所示，在將由電感器Ls、Lp所組成 之L-L匹配電路作爲阻抗匹配用電路設置在供電電路40 的情況’共振頻率Π至f4的S 1 1特性，成爲如同第1 5圖 的曲線。即是頻率低的共振頻率fl ( 900MHz頻帶）則因阻 抗特性劣化’ S 1 1特性（回波損耗R、L )成爲-5dB程度。 【圖式簡單說明】 第1圖爲本發明中第1實施形態的多頻帶晶片天線透 視示意圖。 第2圖爲被形成在相同多頻帶晶片天線之基體的表面 之天線元件的展開圖。 第3圖爲相同多頻帶晶片天線的等價電路圖。 第4圖爲顯示相同多頻帶晶片天線的調諧頻率與回波 損耗的關係特性之曲線。 -23- 201203704 第5圖爲本發明中第2實施形態的多頻帶晶片天線之 透視示意圖。 第6圖爲被形成在第5圖所示的多頻帶晶片天線之基 體的表面之天線元件的展開圖。 第7圖爲等價地顯示第6圖所示之天線元件的並聯共 振電路之電路圖，第7(a)圖爲第1天線元件部的等價電 路圖，第7(b)圖爲第2天線元件部的等價電路圖。 第8圖爲對應於第7(a)圖及第7(b)圖所示的等價 電路圖之頻率特性的變化之曲線，第8(a)圖爲顯示第1 天線元件部的基本波與高諧波接近之變化，第8(b)圖爲 顯示第2天線元件部的基本波與高諧波接近之變化。 第9圖爲顯示第6圖所示之多頻帶晶片天線的共振頻 率之S 1 1特性之曲線》 第1 0圖爲本發明中第3實施形態的多頻帶晶片天線之 構成示意圖。 第11圖爲顯示第10圖所示之多頻帶晶片天線的等價 電路圖。 第12圖爲將第11圖所示的等價電路圖簡單化之等價 電路圖。 第13圖爲顯示第1〇圖所示之多頻帶晶片天線的共振 頻率之S11特性之曲線。 第14圖爲顯示多頻帶晶片天線裝置的阻抗匹配電路的 比較例之電路圖。 -24- 201203704 第15圖爲顯示具備第14圖所示的阻抗匹配電路之多 頻帶晶片天線裝置的共振頻率之S 1 1特性之曲線。 【主要元件符號說明】 10 多頻帶 晶 片 天 線 11 基體 12 天線元 件 12A 第： [天 線 元 件 部 12B 第'‘ 1天 線 元 件 部 1 2C 第： 3天 線 元 件 部 12D 第t *天 線 元 件 部 13 供電部 14 焊盤部 20 多頻帶 晶 片 天 線 21 基體 22 天線元 件 22A 第 1天 線 元 件 部 22B 第： 2天 線 元 件 部 22C 第 1天 線 元 件 部 的 蛇 行 部 22D 第 1天 線 元 件 部 的 蛇 行 部 22E 第 1天 線 元 件 部 的 蛇 行 部 22F 第 1天 線 元 件 部 的 蛇 行 部 22G 第： 2天 線 元 件 部 的 蛇 行 部 22H 第： 2天 線 元 件 部 的 蛇 行 部 -25- 201203704 C 1 蛇 C2 蛇 C3 蛇 23 供 24 焊 30 多 3 1 基 32 天 33 天 34 天 35 天 40 供 41 供 42 天 43 天 44 天 45 天 L1 調 L2 調 C0 匹 L0 匹 P0 供 P1 分 行部12C、12D的對向間隔 行部1 2 E、1 2 F的對向間隔 行部12G、12H的對向間隔 電點 盤部 頻帶晶片天線 體 線元件（共振頻率Π ) 線元件（共振頻率f2) 線元件（共振頻率f3 ) 線元件（共振頻率f4 ) 電電路 電源 線元件 線元件 線元件 線元件（並聯放射電極圖案） 諧用電感器 諧用電感器 配用電容器 配用電感器 電點 · 歧點 -26-[201203704] [Technical Field] The present invention relates to a portable device such as a mobile phone or a PDA (Personal Digital Assistants), and is suitable for a wireless LAN (Local Area Network). A wafer antenna such as a personal computer, a game machine, or a home appliance is a multi-band chip antenna corresponding to a plurality of different frequency bands. [Prior Art] As an antenna of a portable device incorporated in a mobile phone or the like, it is known that A wafer antenna which is generally small and high-performance is known (for example, refer to Japanese Patent Literatures 1, 2, and 3). Such a wafer antenna is characterized by being ultra-small and high-performance in forming an antenna element composed of a silver alloy or the like in an appropriate pattern on the surface of a substrate composed of a dielectric material having a large dielectric constant. Here, Japanese Patent Laid-Open Publication No. Hei Publication No. Hei Publication No. JP-A No. JP-A No. JP-A No. JP-A---------- This antenna device performs impedance matching of each antenna element by providing short stubs having a common feed point for two antenna elements. Further, Japanese Patent Laid-Open No. 2 discloses an antenna device (wafer antenna) in which two antenna elements which are different from each other at the same feeding point are formed of a film on a supporting substrate (substrate). This antenna device performs impedance matching of each antenna element by a matching circuit having two circuit elements. Further, Japanese Patent Laid-Open No. 3 discloses that a dielectric antenna (wafer antenna) of a meandering portion is formed in each of two antenna elements. -4- 201203704 [Previous Technical Literature]. [Patent Document 1] [Patent Document 1] Japanese Patent Laid-Open Publication No. H02- 3 1 4 3 3 0 (Patent Document 2) Japanese Patent Laid-Open No. 2007- 2 1 4961 (Patent Document 3) [Problems to be Solved by the Invention] However, the conventional wafer antennas described in Japanese Patent Publications 1 to 3 each have two antenna elements having different antenna lengths corresponding to two antenna elements. For different frequencies, more than three frequencies cannot correspond. Accordingly, it is an object of the present invention to provide a multi-band chip antenna that can correspond to at least three different frequency bands. [Means for Solving the Problem] In order to solve this problem, the multi-band chip antenna of the first invention is a wafer antenna in which an antenna element is formed on a surface of a single substrate composed of a dielectric body, and is characterized in that an antenna An element having a first antenna element portion and a second antenna element portion extending from two portions of a common power supply portion, a third antenna element portion extending from a middle of the first antenna element portion, and a second antenna element portion The fourth antenna element portion extending in the middle of the two antenna element portions and the element lengths of the first to fourth antenna element portions are set corresponding to different frequency bands. In the multi-band chip antenna of the first aspect of the invention, the element lengths of the antenna elements of the first to fourth antennas are set corresponding to different frequency bands, and 201203704 enables communication in four different frequency bands. The multi-band chip antenna according to the first aspect of the invention may be configured such that when the frequency bands corresponding to the first to fourth antenna element portions are fi to f4 in ascending order, the first antenna element portion corresponds to Π, and the second antenna element The portion corresponding to f4, the third antenna element portion corresponds to f3, and the fourth antenna element portion corresponds to f2. In this case, the radiation end portion of the first antenna element portion having a long element length corresponding to the lowest frequency band fl and the element length corresponding to the highest frequency band f4 may be formed so that the upper surface of the substrate faces each other. In the radiation end portion of the second antenna element portion, in parallel with the upper surface of the substrate, the radiation end portion of the fourth antenna element portion having a long element length corresponding to the second low frequency band f2 is formed, and The radiation end portion of the third antenna element portion having a short element length corresponding to the second highest frequency band f3. A multi-band chip antenna according to a second aspect of the invention is a chip antenna in which an antenna element is formed on a surface of a substrate composed of a dielectric body, characterized in that the antenna element has a difference from at least two parts from a common power supply point. The extended antenna element portion is provided with a meandering portion having a predetermined electrostatic capacitance at a predetermined opposing interval in at least one of the antenna element portions so that the frequency of the fundamental wave is close to the frequency of the high harmonics. The equivalent electrostatic capacitance portion of the circuit. In the multi-band chip antenna according to the second aspect of the invention, the frequency of the fundamental wave of the parallel resonant circuit corresponding to at least one of the antenna elements is close to the frequency of the high harmonics, so that the antenna element can be one of the antenna elements. The frequency of the fundamental wave of the part communicates with the frequency of the high harmonic and at least three frequency bands of the fundamental wave of the other antenna element 201203704. In this case, it is easy to reduce the size of the substrate as compared with the case where three antenna elements having different antenna lengths are formed on the substrate. In the multi-band chip antenna of the second invention, it is preferable that the mean spacing of the meandering portion of the antenna element portion is 0. 1 to 〇. 3mm can reduce the equivalent inductance of the parallel resonant circuit of the antenna element portion, so that the electrostatic capacitance increases 'and can be up to 1. 2 to 1. The frequency of the high harmonics is close to 5 times. Further, the multi-band chip antenna substrate of the second invention is preferably composed of a dielectric plastic having a dielectric constant ε of 3 to 20. In this case, the length of each antenna element portion can be shortened by the wavelength shortening effect in accordance with the dielectric constant ε, and the substrate can be easily miniaturized. A multi-band chip antenna according to a third aspect of the invention is a chip antenna in which a plurality of antenna elements corresponding to at least three resonance bands are formed on a surface of a substrate composed of a dielectric body, characterized in that: the power supply is supplied from a common power supply point. In the power supply circuit of each antenna element, an LC circuit for impedance matching is provided in the power supply circuit. In the multi-band chip antenna according to the third aspect of the invention, the LC circuit provided in the power supply circuit having the common feed point matches the impedance in accordance with at least three resonance bands. In the multi-band chip antenna of the third invention, each of the antenna elements can be branched into two systems from a common power supply point, and the antenna elements of the different systems are connected in parallel via the LC circuit. In this case, one antenna element having a lower frequency than 201203704 and two antenna elements having a high frequency are divided into two systems, and two antenna elements having a high frequency are connected in parallel via an LC circuit. In the multi-band chip antenna of the first to third inventions, the substrate is preferably made of a dielectric plastic having a dielectric constant ε of 3 to 20. In this case, the length of each antenna element portion can be shortened by the effect of shortening the wavelength of the dielectric constant ε, and accordingly, the substrate can be easily miniaturized. [Effect of the Invention] According to the multi-band chip antenna of the first aspect of the invention, since the element lengths of the first to fourth antenna element portions are set corresponding to different frequency bands, communication can be performed in four different frequency bands. . In the multi-band chip antenna according to the first aspect of the invention, when the frequency bands corresponding to the first to fourth antenna element portions are set to 4 to f4 in ascending order, the first antenna element portion corresponds to Π, and the second antenna element portion corresponds to In the case of f4, the third antenna element portion corresponds to f3, and the fourth antenna element portion corresponds to f2, and the first antenna having a long element length corresponding to the lowest band 形成 can be formed so that the upper surface of the substrate faces each other. The radiation end portion of the element portion and the radiation end portion of the second antenna element portion having a short element length corresponding to the highest frequency band f4. In this case, in parallel with the radiation end portion of the first antenna element portion and the radiation end portion of the second antenna element portion, the second low frequency band f2 can be formed so as to face each other on the upper surface of the base body. The radiation end portion of the fourth antenna element portion having a long element length and the radiation end portion of the third antenna element portion having a short element length corresponding to the second highest frequency band f3. According to the multi-band chip antenna having such a configuration, the base area can be miniaturized by minimizing the area of the upper surface of the substrate, and the multi-band wafer antenna can be reduced in size. According to the multi-band chip antenna of the second aspect of the invention, the frequency of the fundamental wave and the frequency of the high harmonic of the antenna element portion of at least one of the antenna elements and the frequency of the fundamental wave of the other antenna element portion are at least 3 bands for communication. In this case, the base body is easily miniaturized as compared with the case where three antenna elements having different antenna lengths are formed on the base. According to the multi-band chip antenna of the third aspect of the invention, since the LC circuits provided in the power supply circuits having the common feed point match the impedances corresponding to at least three resonance bands, it is possible to obtain good results in at least three resonance bands. Impedance characteristics. As a result, good communication can be performed in at least three resonance bands. In the multi-band chip antenna according to the first to third aspects of the invention, when the substrate is made of a dielectric plastic having a dielectric constant ε of 3 to 20, the effect can be shortened by shortening the effect in accordance with the wavelength of the dielectric ε of the substrate. In this case, the length of each antenna element portion can be easily reduced in size. [Embodiment] [Embodiment for Carrying Out the Invention] Hereinafter, an embodiment of a multi-band chip antenna according to the first to third aspects of the invention will be described with reference to the drawings. [First Embodiment] The multi-band wafer day 201203704 line corresponding to the first embodiment of the first invention is a small-sized, high-performance multi-band chip antenna that can be incorporated in a portable device such as a next-generation mobile phone. Functionally as, for example, the 900MHz band' 1. 5 GHz band, 2. 1GHz band, 2. The 4 GHz band is a quarter-wave monopole antenna of the resonance band. As shown in Fig. 1, the multi-band wafer antenna 10 of the first embodiment includes a single dielectric body made of a block-shaped dielectric plastic having a length of 20 mm, a width of 20 mm, and a thickness of about 5 mm. Substrate 1 1. On the peripheral surface and surface of the base 11, antenna elements 12 which resonate in four different frequency bands are formed. Further, a single power supply unit 13 for supplying power to the antenna element 12 and a pad portion 14 for mounting the multi-band chip antenna 10 on an equipment board (not shown) are formed on the lower surface of the base 11. . The dielectric plastic constituting the substrate 11 is composed of a composite material of a high dielectric constant ceramic, a polyphenylene sulfide resin (PPS), and a liquid crystal polymer (LCP), and has dimensional stability suitable for precision molding. And heat resistance to solder, and high dielectric property in the range of dielectric constant ε of 3 to 20. The antenna element 12, the power supply unit 13 and the pad portion 14 are formed by patterning a plating layer composed of a suitable conductive metal material such as copper, nickel or a silver alloy into a predetermined shape. As shown in Fig. 1 and Fig. 2, the antenna element 丨2 has the first antenna element portion 12A and the second antenna element portion 12A extending from the power supply unit 13 of the common unit, and is extended from the first unit. The third antenna element portion 1 2C ' that extends in the middle of the antenna element portion 12A and the fourth antenna element portion 12D that extends from the middle of the second antenna element portion 12A. -10- 201203704 The length of I 11 in the case-shaped frequency band of the right side end I 1 1 of the first figure is the length of the I 1 (the difference is from the 12A to the base and from the front; In the first embodiment, the first antenna element portion 12A is formed by a portion which is continuous with the power supply portion 13 formed on the lower surface of the base body 11 as shown in the vicinity of the front portion of the base 11, and from the upper end portion thereof to the right side. a portion extending linearly at a right angle, a portion extending linearly from the right end portion thereof to the vicinity of the inner side of the base 11 surface, a portion standing upward from the inside thereof, and continuing to the upper end portion up to the base portion A diagram of a radiation end portion extending linearly in the vicinity of the left side of the upper side of the bone. The first antenna element portion 12A corresponds to, for example, a 900 MHz band, and the element length from the power supply portion 13 is dependent on the dielectric f of the base f. ε is an example of a quarter-wave of a frequency set in the 900 MHz band of about 83 mm. The second antenna element 1 2B has an upper end portion that is erected from the vicinity of the front center portion of the base 11 from the first antenna element portion. Extending linearly on the left side a portion of the portion in which the inner side end portion extending linearly extending in the vicinity of the inner side of the left side surface of the left end portion and the straight portion is continuous, and a portion which is continuous with the upper end portion of the upper end portion of the base body 11 The second antenna element portion 12B shaped by the pattern of the radiation end portion corresponds to, for example, 2. In the case of the 4 GHz band f4, the length of the element from the power supply unit 13 is set at 2. The 1/4 wavelength of the frequency of the 4 GHz band is about 31 mm. The third antenna element portion 1 2C has a portion that is erected above the vicinity of the front side of the portion extending linearly from the right side surface of the 201203704 base 11 of the first antenna element portion 12A, and is continuous with the upper end portion thereof. A pattern of radiation ends facing the right side of the upper surface of the base 11 is formed. This third antenna element portion 12C corresponds to, for example, 2. In the frequency band f3 of the 1 GHz band, the length of the element from the power supply portion 13 is set at 2. The 1/4 wavelength of the frequency of the 1 GHz band (this example is about 36 mm). The fourth antenna element portion 12D has a portion that is erected above the front side of the portion extending linearly from the left side surface of the base body 11 in the second antenna element portion 12B, and is continuous with the upper end portion thereof. A pattern of radiation end portions extending linearly until the vicinity of the right side of the upper surface of the base 11 is formed. The fourth antenna element portion 1 2D corresponds to, for example, 1. In the frequency band f2 of the 5 GHz band, the length of the element from the power supply portion 13 is set to be 1. The 1/4 wavelength of the frequency of the 5 GHz band (this example is about 50 mm). Here, the radiation end portion of the first antenna element portion 12A corresponding to the lowest frequency band fl (900 MHz band) and the highest frequency band f4 (2. The radiation end portions of the second antenna element portion 12B of the 4 GHz band are opposed to each other at a predetermined interval on the upper surface of the substrate 11. Further, in parallel with these emission ends, corresponding to the second lowest frequency band f2 (1. The radiation end portion of the fourth antenna element portion 12D of the 5 GHz band and the frequency band f3 corresponding to the second highest frequency (2. The radiation end portion of the third antenna element portion 12C of the 1 GHz band is at -12-. 201203704 The upper surfaces of the bases 1 1 are opposed to each other with a predetermined interval therebetween. Fig. 3 is an equivalent circuit showing the antenna element 12 shown in Fig. 2. Here, the first antenna element 12A corresponding to the band Π of the 900 MHz band has the impedances of the respective portions of the path set to 211, 212, and 213 so that the impedance seen from the power supply unit 13 is 50 Ω, and Make the length of each part of the path Ln, L12, L13. The total length of the 1/4 wavelength is set by appropriately changing the width and length of each part of the path. Corresponds to 2. In the second antenna element portion 12B of the frequency band f4 of the 4 GHz band, the impedance of each portion of the path is set to Z21, Z22, and Z23 so that the impedance seen from the power supply portion 13 is 50 Ω, and each path is The length of the part 1^21, 1^2 2, and 1^23 is set to a length of 1/4 wavelength, and the width and length of each part of the path are appropriately changed and set. Corresponds to 2. In the third antenna element portion 12C of the frequency band f3 in the 1 GHz band, the impedance of each portion of the path is Z 1 1 and Z 1 4 so that the impedance seen from the power supply portion 13 is 50 Ω, and the path is made. The lengths L11 and L14 of the respective portions are set to a length of 1/4 wavelength in total, and are set by appropriately changing the width and length of each portion of the path. Corresponds to 1. In the fourth antenna element portion 12D of the frequency band f2 of the 5 GHz band, the impedance of each portion of the path is set to Z21 and Z24 so that the impedance seen from the power supply portion 13 is 50 Ω, and the respective portions of the path are The lengths L21 and L24 are set to a length of 1/4 wavelength in total, and are set by appropriately changing the width and length of each part of the path. The multi-band chip antenna i 〇-13-201203704 according to the first embodiment configured as described above is incorporated in an equipment board (not shown) of the portable device, and the first antenna element portion 12A and the first antenna element 12 are provided. The two antenna element portions 12B, the third antenna element portion 12C, and the fourth antenna element portion 12D function as a monopole antenna, respectively, and are available in the 900 MHz band. 5GHz band, 2. 1GHz band ' 2. 4GHz band communication. However, in the multi-band chip antenna 10 of the first embodiment, the S11 characteristic of the resonance frequency Π to f4 (return loss R. L), as shown in the graph of Fig. 4, in the frequency band fl (900 MHz band), the frequency band f2 (1) 5GHz band), frequency band f3 (2) 1GHz band) and frequency band f4 (2) The 4 GHz band) is a good resonance state with the least reflection. Here, the multi-band chip antenna 10 of the first embodiment corresponds to the radiation end portion of the first antenna element portion 12A of the lowest frequency band fl (900 MHz band) and the highest frequency band f4 (2. The radiation end portions of the second antenna element portion 12B of the 4 GHz band are opposed to each other by a predetermined distance on the upper surface of the base 11, and correspond to the second low frequency band f2 in parallel with the radiation end portions. The radiation end portion of the fourth antenna element portion 12D of the 5 GHz band and the frequency band f3 corresponding to the second highest frequency (2. The radiation end portions of the third antenna element portion 12C of the 1 GHz band are opposed to each other at a predetermined interval on the upper surface of the base 11. Therefore, in the multi-band chip antenna 10 of the first embodiment, the area of the upper surface of the substrate can be reduced as much as possible, and the base 11 can be miniaturized, which contributes to miniaturization of the multi-band chip antenna 10. The multi-band chip antenna according to the first aspect of the invention is not limited to the above-described embodiment of the above -14 - 201203704, and for example, the shape of the base 11 constituting the multi-band chip antenna 10 is not limited to that shown in Fig. 1. The block shape may also be a rod shape of an angular profile. In addition, the width dimension of each of the first antenna element portion 12A to the fourth antenna element portion 12D in the antenna element 12 can be set in a frequency band corresponding to each of the first antenna element portion 12A to the fourth antenna element portion 12D. The proper width dimension of the best impedance characteristics. [Second Embodiment] The multi-band chip antenna 20 according to the second embodiment of the second invention is a small-sized, high-performance multi-band chip antenna that can be incorporated in a portable device such as a next-generation mobile phone. Take as above for example 1. 5 GHz band, 2. The 1 GHz band is a quarter-wave monopole antenna of the fundamental wave frequency. As shown in FIG. 5, the multi-band chip antenna 20 of the second embodiment includes a base body made of a block-shaped dielectric plastic body having a length of 20 mm, a width of 5 mm, and a thickness of 5 mm. twenty one. Further, the shape of the base 21 is not limited to the block shape as shown in the drawings, and may be a rod shape of an angular cross section. The dielectric plastic constituting the substrate 21 is composed of a composite material of a high dielectric constant ceramic, a polyphenylene sulfide resin (PPS), and a liquid crystal polymer (LCP), and has dimensional stability suitable for precision molding. And heat resistance to solder, and high dielectric property in the range of dielectric constant ε of 3 to 20. On the circumferential surface and the upper surface of the base 21, antenna elements having two different archaneous frequencies f1 and Π as fundamental waves and different resonance frequencies f3 and -15-201203704 f4 as high harmonic frequencies are formed. twenty two. Further, under the base, a single power supply for supplying power to the antenna element 22 is formed for mounting the multi-band chip antenna 20 on the equipment substrate (not shown in the pad portion 24. The antenna element 22, the power supply point 23, and the pad portion 24) A plating layer composed of a suitable conductive metal material such as a silver alloy is formed into a predetermined shape. As a substrate treatment for this purpose, the surface is previously subjected to bead blasting. Here, an example of plating pattern formation is shown. After the surface of the sprayed base 21 is completely formed with a plating layer, the portion formed by patterning by masking or uranium engraving is masked. After removing the unnecessary portion of the plating layer by appropriate means, by removing the mask material, The plating pattern is formed into a predetermined shape. Instead of this method, the unnecessary portion of the base 11 layer is removed by irradiation of the laser light, and the plating pattern is formed into a predetermined shape. As shown in FIGS. 5 and 6, the antenna element J2 has a first antenna element portion 22A and an element portion 2 2 B which are branched from two ends of a single feed point 23 formed on the lower surface of the base 21. The element portion 22A is formed so as to straddle the right side surface and the right side surface of the base 21, and extends from the right front surface to the right side so as to extend parallel to each other to form predetermined electrostatic discharge portions 22C and 22D. The pattern of the copper and nickel on the substrate is similar to the point 23 and the nickel on the substrate 21, and then the pattern is applied to the substrate. Then, in addition to the means, the full ore may be continuous in the direction of the part. The portion capacitors on the front and right sides of the left and right antennas J are serpentinely extended 16 - 201203704 to form serpentine portions 22E and 22F having predetermined electrostatic capacitances. The second antenna element portion 22B is formed so as to straddle the left front surface, the left side surface, and the left side surface of the base body 21, and the serpentine portions 22G and 22H which extend in parallel with each other and have a predetermined electrostatic capacitance are formed on the left side surface. Here, the first antenna element portion 22A is, for example, 1. The 5 GHz band becomes the frequency f of the fundamental wave, 2. The 4 GHz band is a mode of the frequency f3 of the high harmonics, and the length and the width thereof are set to appropriate sizes. In the present example, the meandering portion C1 of the meandering portion 22C and the meandering portion 22D, the meandering portion 22E and the meandering portion 22F, respectively. The opposite interval C2 is set to 0. 1 to 0. The proper spacing of the 3mm range. In this manner, the first antenna element portion 22A is formed in a pattern, and as shown in the seventh (a) diagram, the inductance component L1' of the parallel resonance circuit included in the first antenna element portion 22A is changed to L1, and the capacitance component C1' is changed. C1. As a result, as shown in the eighth (a) diagram, the frequency of the fundamental wave changes from Π' shown by a broken line to Π shown by a solid line, and the frequency of the high harmonic is indicated by a broken line. F3' changes to f3 as shown by the solid line. As a result, the frequency fl which becomes the fundamental wave is close to the frequency f3 of the high harmonic (LlxCl) = (L 1 ' X C 1 ')). On the other hand, the second antenna element portion 22B is, for example, 2. The 1 GHz band becomes the fundamental wave frequency f2, 3. The 5 GHz band is a mode of high harmonic frequency Μ, and its length and width are set to appropriate sizes. In this example, the diagonal spacing C3 between the meandering portion 22G and the meandering portion 22 is set to 〇. 1 to 0. The appropriate interval of the 3 mm range -17-201203704 Thus, the second antenna element portion 22B is patterned, and as shown in the seventh (b) diagram, the inductance component L2' of the parallel resonance circuit of the second antenna element portion 22B is provided. When it changes to L2, the electrostatic capacitance component C2' changes to C2. As a result, as shown in the eighth (b) diagram, the frequency of the fundamental wave changes from f 2 ' indicated by a broken line to f 2 indicated by a solid line, and the frequency of the high harmonic is from the dotted line. The f4' shown is changed to f4 shown by the solid line. As a result, the frequency f2 which becomes the fundamental wave is close to the frequency f4 of the high harmonic (L2xC2) = '(L2, xC2,)). The multi-band chip antenna 20 of the second embodiment configured as described above is incorporated in an equipment board (not shown) of the portable device, so that the first antenna element portion 22A and the second antenna element portion 22B of the antenna element 22 can be used. The four resonance frequencies Π to f4 communication are different from each other, that is, the multi-band chip antenna 20 becomes the resonance frequency fl of the fundamental wave of the parallel resonance circuit corresponding to the first antenna element portion 22A in the antenna element 22. 5GHz band) and high harmonic resonance frequency f3 (2. The 4 GHz band), and the resonance frequency f2 (2_1 GHz band) of the other fundamental wave of the parallel resonance circuit corresponding to the second antenna element portion 22B and the resonance frequency f4 of other high harmonics (3) 5GHz band) communication. However, in the multi-band chip antenna 20 of the second embodiment, the S11 characteristic of the resonance frequency Π to f4 (return loss R. L), as shown in the graph of Figure 9, 'at the resonant frequency fl(1) 5GHz band), resonance frequency f2 (2) 1GHz band), resonance frequency f3 (2) 4GHz band) and resonance frequency f4 (3. The 5 GHz band is about _20 dB, and it is a good resonance state with less reflection. In the multi-band chip antenna 20 of the second embodiment, the first antenna element portion 22A and the second antenna element portion 22B having different antenna lengths can correspond to four resonance frequencies different from each other. F4 can reduce the size of the multi-band chip antenna 20 by miniaturizing the substrate 21 compared to the case where at least four antenna elements having different antenna lengths are formed as in the conventional example. The multi-band chip antenna of the second invention is not limited to the second embodiment described above. For example, the pattern of the antenna element 22 formed on the surface of the base 21 can be changed to be different from the patterns shown in FIGS. 5 and 6 as long as it has a serpentine portion having an electrostatic capacitance corresponding to a resonance frequency of a high harmonic. The pattern. Alternatively, the first antenna element portion 22A of the antenna element 22 may be configured to be 1. The 5 GHz band as the fundamental wave resonance frequency Π will be 2. The 1 GHz band is used as the resonance frequency f2 of the high harmonics, and the second antenna element portion 22B is constructed to be 2. The 4 GHz band acts as the fundamental wave resonance frequency f3, which will be 3. The 5 GHz band serves as the resonant frequency f4 of the high harmonics. Similarly, the first antenna element portion 22A of the antenna element 22 may be configured to be 1. The 5 GHz band acts as the fundamental wave resonance frequency Π, which will be 3. The 5 GHz band is used as the resonance frequency f4 of the high harmonics, and the second antenna element portion 22B is configured to be 2. The 1 GHz band serves as the fundamental wave resonance frequency f2, which will be 2. The 4 GHz band serves as the resonant frequency f4 of the high harmonics. Furthermore, the multi-band chip antenna 20 of the second embodiment can communicate with the frequency band of 1. 5GHz band, 2. 1GHz band, 2. 4GHz band, 3. 5GHz frequency -19- 201203704 Band, after all, is just an example, you can change to the appropriate frequency band. [Third Embodiment] The multi-band wafer antenna according to the third embodiment of the third invention is a small-sized, high-performance multi-band chip antenna that can be incorporated in a portable device such as a next-generation mobile phone. As shown in Fig. 10, the multi-band chip antenna 30 of the third embodiment includes a power supply circuit 40 that supplies power to the antenna. The multi-band chip antenna 30 is disposed on an equipment board (not shown), and the power supply circuit 40 is formed on an equipment board (not shown). The multi-band chip antenna 30 has a structure in which the antenna elements 32 to 35 composed of a plating layer are formed on the surface of the substrate 31 composed of a dielectric plastic, and is formed, for example, to have a length of 12. Ox width 5. Ommx height 3. Block size of 0mm. The dielectric plastic constituting the substrate 31 is composed of a composite material of a high dielectric constant ceramic, a polyphenylene sulfide resin (PPS), and a liquid crystal polymer (LCP), and has a dielectric ε of 3 to 20 The range of high dielectric properties. On the other hand, the antenna elements 12 to 15 are formed by patterning a plating layer composed of a conductive metal material such as copper, nickel or a silver alloy into a predetermined shape. The power supply circuit 40 includes an antenna element 32 that connects the base end side of the antenna element 32 of the multi-band chip antenna 30 to the power supply unit 4 via the tuning inductor L1, and an antenna element 3 of the multi-band chip antenna 30. The base end side is connected to the antenna element 43 of the power supply 41, the base end side of the antenna element 34 of the multi-20-201203704 band chip antenna 30 via the tuning inductor L2, and the antenna element 44 connected to the power supply 41, And the front end side of the antenna element 33 of the multi-band chip antenna 30 is connected to the antenna element 45 of the antenna element 35. The antenna element of the first system extending from the power supply 41 to the antenna element 42 and the antenna element 32 functions as a monopole antenna having a resonance frequency of, for example, a 900 MHz band. Therefore, the tuning inductor provided between the antenna elements 42 is provided. L1, the inductance is set at, for example, 12. 0nH. The antenna element of the second system extending from the power supply 41 to the antenna element 43, the antenna element 33, the antenna element 45, and the antenna element 35 functions as, for example, one. The 5 GHz band is a monopole antenna with a resonant frequency f 2 . The antenna element of this second system has 2. The resonance frequency f4 of the 4 GHz band, as 1. The high frequency component of the resonant frequency f2 in the 5 GHz band. Further, the antenna element 45 is formed on the back surface of the equipment substrate (not shown) as a width 〇. A parallel radiation electrode pattern of 35 mm 1 degree. The antenna element of the third system extending from the power supply 4 1 to the antenna element 44 and the antenna element 34 functions as, for example, 2. Since the 0 GH z band is a monopole antenna of the resonance frequency f3, the tuning inductor L2 between the antenna elements 43 is provided, and the inductance is set to, for example, 2. 7nH. Here, the antenna element 42 constituting the antenna element of the first system and the antenna element 43 constituting the antenna element of the second system are branched from the common feeding point P0 of the power supply 41. Further, the antenna element 43 constituting the antenna element of the second system and the antenna element 44 constituting the antenna element of the third system are bifurcation points P 1 • 21 between the common feeding point P 〇 and the tuning inductor L 2 . - 201203704 Disagreement. Then, in this kind of power supply circuit 4. The impedance matching LC circuit corresponding to the resonance frequencies fl to f4 of the antenna elements of the first system to the first system is provided. That is, as shown in Figs. 10 to 12, the setting matching electric motor C0 is disposed between the common feeding point P 〇 and the divergence point P1, and the matching inductor L0 is provided between the feeding point P and the ground. The matching capacitor co capacitor is set at, for example, 2. OpF, the inductance of the matching inductor L0 is set as in 2. 2nH. 11 and 12 are equivalent circuits showing the multi-band wafer line 30 shown in Fig. 10. A pattern C1 of the capacitance portion is formed between the antenna element 32 and the antenna element 34, a pattern C2 constituting the capacitance portion is formed between the antenna element 32 and the antenna element, and static electricity is formed between the antenna element 33 and the line element 35. The pattern C3 of the capacitor portion is assembled in a portable device (not shown) as in the multi-band wafer day 30 of the third embodiment configured as described above, and is supported by the antenna element 32 and the equipment substrate (not shown). The antennas of the first system to the third system, which are composed of the antenna elements 42 to 45, function as a monopole antenna respectively to be performed in the 900 MHz band, 1. 5GHz band, 2. 0GHz band 2. The 4 GHz band is a communication of resonant frequencies. Here, the multi-band chip antenna 30 of the third embodiment is provided in the power supply circuit 40 of the power transmitting antenna elements 32 to 35, and includes a matching capacitor c〇 constituting the LC circuit for impedance matching and an inductor L0 for matching. Then, by performing the impedance matching of the antenna elements of the first system to the third system of the -22-35 201203704 of the occupant 33 antenna 35 of the multi-band chip antenna 30, the resonance is performed. Band fl (900MHz band), resonance band f2 (1. 5GHz band), resonance frequency band f3 (2. 0GHz band) and resonance band f4 (2) 4GHz band), ensuring good impedance characteristics. However, in the multi-band chip antenna 30 of the third embodiment, the S11 characteristic of the resonance frequency Π to f4 (return loss R. L) becomes a curve as shown in Fig. 13. That is, at the resonance frequency fl (900MHz band), the resonance frequency f2 (1) 5 GHz band), resonance frequency f3 (2_0 GHz band) and resonance frequency f4 (2) In the 4 GHz band, the S11 characteristic is about -15 dB, and a good resonance state with less reflection is obtained. In this case, as shown in Fig. 14, the LL matching circuit composed of the inductors Ls and Lp is set as the impedance matching circuit. In the case of the power supply circuit 40, the S 1 1 characteristic of the resonance frequency Π to f4 is a curve as shown in Fig. 15. That is, the resonance frequency fl (900 MHz band) having a low frequency is deteriorated by the impedance characteristic 'S 1 1 characteristic (return loss R, L) to about -5 dB. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a multi-band chip antenna according to a first embodiment of the present invention. Fig. 2 is a developed view of an antenna element formed on the surface of a substrate of the same multi-band chip antenna. Figure 3 is an equivalent circuit diagram of the same multi-band chip antenna. Figure 4 is a graph showing the relationship between the tuning frequency and the return loss of the same multi-band chip antenna. -23-201203704 Fig. 5 is a schematic perspective view showing a multi-band chip antenna according to a second embodiment of the present invention. Fig. 6 is a developed view of an antenna element formed on the surface of the substrate of the multi-band chip antenna shown in Fig. 5. Fig. 7 is a circuit diagram showing a parallel resonance circuit of an antenna element shown in Fig. 6 in an equivalent manner, wherein Fig. 7(a) is an equivalent circuit diagram of the first antenna element portion, and Fig. 7(b) is a second antenna An equivalent circuit diagram of the component part. Fig. 8 is a graph showing changes in the frequency characteristics of the equivalent circuit diagrams shown in Figs. 7(a) and 7(b), and Fig. 8(a) is a diagram showing the fundamental wave of the first antenna element portion. The change of the high harmonic is close, and the eighth (b) diagram shows the change of the fundamental wave and the high harmonic of the second antenna element portion. Fig. 9 is a graph showing the S 1 1 characteristic of the resonance frequency of the multi-band chip antenna shown in Fig. 6. Fig. 10 is a view showing the configuration of the multi-band chip antenna according to the third embodiment of the present invention. Fig. 11 is a view showing an equivalent circuit of the multi-band chip antenna shown in Fig. 10. Fig. 12 is an equivalent circuit diagram for simplifying the equivalent circuit diagram shown in Fig. 11. Fig. 13 is a graph showing the S11 characteristic of the resonance frequency of the multi-band chip antenna shown in Fig. 1. Fig. 14 is a circuit diagram showing a comparative example of the impedance matching circuit of the multi-band chip antenna device. -24- 201203704 Fig. 15 is a graph showing the S 1 1 characteristic of the resonance frequency of the multi-band chip antenna device having the impedance matching circuit shown in Fig. 14. [Description of main component symbols] 10 Multi-band chip antenna 11 Base 12 Antenna element 12A Section: [Antenna element part 12B No. 1 antenna element part 1 2C: 3 antenna element part 12D t* antenna element part 13 Power supply part 14 Pad portion 20 Multi-band chip antenna 21 Base 22 Antenna element 22A First antenna element portion 22B: 2 Antenna element portion 22C Snake portion 22D of first antenna element portion Snake portion 22E of first antenna element portion First antenna element portion Snake unit 22F Snake unit 22G of the first antenna element portion: 2: Snake unit 22H of the antenna element portion: 2: Snake unit of the antenna element section - 25 - 201203704 C 1 Snake C2 Snake C3 Snake 23 for 24 welding 30 more 3 1 base 32 days 33 days 34 days 35 days 40 for 41 for 42 days 43 days 44 days 45 days L1 adjustment L2 adjustment C0 L0 P0 for P1 branch 12C, 12D opposite interval line 1 2 E, 1 2 The opposite interval of F 12G, 12H Oppositely spaced electrical point disk section Band antenna body line component (resonant frequency Π) Line component (resonant frequency f2) Line component (resonant frequency f3) Line component (resonant frequency f4) Electrical circuit power line component line Component line component line component (parallel radiation electrode pattern) Harmonic inductor harmonic inductor with capacitor with inductor electrical point · -26-26-