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TW200847203A - Dielectric ceramic and multilayer ceramic capacitor - Google Patents

Dielectric ceramic and multilayer ceramic capacitor Download PDF

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Publication number
TW200847203A
TW200847203A TW096144886A TW96144886A TW200847203A TW 200847203 A TW200847203 A TW 200847203A TW 096144886 A TW096144886 A TW 096144886A TW 96144886 A TW96144886 A TW 96144886A TW 200847203 A TW200847203 A TW 200847203A
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Taiwan
Prior art keywords
dielectric
ceramic
powder
dielectric ceramic
bdv
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TW096144886A
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English (en)
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TWI452586B (zh
Inventor
Koichi Banno
Tomomi Koga
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Murata Manufacturing Co
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Publication of TW200847203A publication Critical patent/TW200847203A/zh
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Publication of TWI452586B publication Critical patent/TWI452586B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
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    • C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
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    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/62605—Treating the starting powders individually or as mixtures
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Description

200847203 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種介電質陶瓷及用其所構成之積層陶瓷 電容，尤其是關於一種適合於高電場下使用之介電質陶瓷 及積層陶瓷電容。 【先前技術】 積層陶瓷電容中有能於例如250〜1000 V之高電壓下使用 者。該情況下，介電質陶瓷層之各層，依據其厚度形成電 場，施加25〜100 kV/mm之高電壓。故，此類中高壓用途 之積層陶瓷電容，有介電質陶瓷層絕緣破壞之憂患。 由上述背景可知，於用作中高壓用途之積層陶瓷電容 上，絕緣破壞電壓（BDV :單位為kV/mm)為重要指標。 BDV係指使電場上升時產生絕緣破壞之電場值，其係由與 負載測試之壽命全然不同之現象所導致。 作為對本發明有興趣之介電質陶瓷，有例如專利第 3323801號公報（專利文獻1)所記載者。專利文獻丄中揭示了 一種（Ca，Sr，Ba)(Zr，Ti)〇3系之介電質陶瓷。該介電質陶竟 具備耐還原性，謀求提高電容溫度特性之直線性與品質係 數Q，並且達成可提高BDV。 一般說來，BDV高的材料，其介電常數ε很低。上述專 利文獻1記載之介電質陶瓷亦不例外，達成12〇 kv/mm以 上，但介電常數ε低至i00左右。故，對積層陶瓷電容之小 型化不利。 故而，期望開發可對BDV及介電常數ε兩方給與較高值 127065.doc 200847203 之介電質陶瓷。 專利文獻1 :專利第3323801號公報 【發明内容】 發明欲解決之課題 故’本發明之目的係提供一種不僅具高絕緣破壞電壓， 且具高介電常數ε之介電質陶瓷。 本發明之其他目的係提供一種採用上述介電質陶兗所構 成之適合中高壓用途之積層陶瓷電容。
解決課題之手段 本發明相關之介電質陶瓷為解決上述技術性課題，其特 徵在於：以（Bai_xCax)mTi〇3 30$d5()、〇 95(^以 1.025)為主要成分。 該；I電質陶瓷中，最好更對於上述主要成分1〇〇莫耳份 包含1〜14莫耳份選自Y、La、Ce、Pr、Nd、Sm、£U、
Gd、Tb、Dy、Ho、Er、Tm、Yb以及Lu中之至少一種稀土 族元素。 另外，本發明相關之介電質陶瓷，最好更對於上述主要 成分100莫耳份分別包含有G」〜3 G莫耳份、G 5〜5 G莫耳份 及1·0〜5.0莫耳份Mn、Mg以及Si。 亦適用於以下積層陶究電容：具備包含層積而成 之複數"電質陶莞及沿介電質陶究層間的特定介面形成之 積層體’及為電性連接於内部電極之特定者而 :成於積層體外表面上之外部電極。本發明相關之積声陶 莞電容的特徵在於:内部電極以Ni為主要成分，並= 127065.doc 200847203 介電質陶瓷層包括如前述之本發明相關之介電質陶究。 本發明特別有助適用於使用電場為25〜100 kv/mm、保 迅絶緣破壞電壓大於9 0 kV/mm之積層陶究電容。 發明之效果 本發明相關之介電質陶瓷，BaTi〇3與CamTi〇3有時不完 全固溶而分離為2相。在此，BamTi〇3若是單獨，其絕緣破 裏電雹#乂低，然其介電常數£較高。另一方面，。^丁丨… 若是單獨，其絕緣破壞電壓較高，然其介電常數ε較低。 如上述，在0·30$χ$〇5〇的範圍中選擇該等存在莫耳比即 X，則並非BamTi〇3與CamTi〇s單獨的平均，而是藉由複合 效果能引導出兼具上述兩者長處之特性。其結果，藉由本 卷明相關之介電質陶瓷，例如對於介電常數ε可獲得5〇〇以 上的值，亦能確保大於9〇 kv/mm之絕緣破壞電壓。 本發明相關之介電質陶瓷如上所述，如還包括一定量之 稀土族元素，則可進-步提高BamTi〇々CamTi〇3之複合效 果，例如可實現500以上的介電常數ε，亦能確保100 kV/mm以上的絕緣破壞電壓。 本發明相關之介電質陶究如上所述，更含-定量Mn、 Mg及Si的情況下’藉由還原性氣氛下的培燒，亦可得到如 上述之介電常數ε及絶緣破、壞電壓。故而，即便是具備以 Νι為主要成刀的内部電極之積層陶瓷電容，亦可確保良好 的信賴性。 【實施方式】 圖1係表不依據本發明一實施形態之積層陶曼電容i的剖 127065.doc 200847203 面圖。 積層陶瓷電容1包含有積層髀2 層體2積層體2包含層積而成 之複數介電質陶瓷層3，及沿複 檟而成 、 攸致，1電質陶瓷層3間的特定 複數界面而分別形成之複數内部電極4及5。 内部電極4及5宜以Ni為主要志八 + „ 要成刀。内部電極4及5形成為 到達積層體2之外表面，但拉出 饵主積層體2之一方端面6之 内部電極4與拉出至另一方诚 Μ面7之内部電極4於積層體2内 部交替配置。
積層體2外表面且端面6及7上，分別形成有外部電極8及 9。外部電極8及9由例如塗佈以Cu為主要成分之導電膏並 培燒而形成。-方的外部電極8於端面6上，與内部電極4 電性連接’另一方的外部雷極q 丨1电禋9於鸲面7上，與内部電極5 電性連接。 外部電極8及9上，為俊煤垃Λ Θ使坪接I*生良好，視需要形成Ni等構 成之第1電鍍膜10及11，再於苴卜形士、c^ 丹义共上形成Sn等構成之第2電鍍 膜12及13。 •如此之積層陶竟電容丨中，介電質陶竟層3包括本發明相 關之介電質陶莞，即以（Bai xCax)mTi〇3 (〇 〇 5〇、 0.950$m$l.〇25)為主要成分之介電質陶瓷。 該該介電質陶竟主要成分之（BaixCax)mTi〇3中， BamTi〇3與CamTi〇3有時不完全固溶而分離為2相。並且， BamTi〇3若是單獨，其絕緣破壞電壓（BDV)較低，然其介電 常數ε較高。另一方面，CamTi〇3若是單獨，其BDV較 南’然其ε較低。故而，得知若如上述，在〇·3〇$ 〇 5〇 127065.doc 200847203 的範圍中選擇該等兩者存在莫耳比即x，則並非BamTi〇3與 CamTi〇3的平均，而是藉由兩者的複合效果能獲得兼具兩 者長處之特性。例如，對於ε可獲得500以上的值，亦能 實現120 kV/mm以上的BDV，最低也能確保大於9〇 kv/mm 的 BDV。 構成介電質陶瓷層3之介電質陶瓷，最好更對於上述主 要成分100莫耳份包含莫耳份選自Y、La、Ce、Pr、 Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb 以及 ^中 之至少一種稀土族元素。此類稀土族元素具有提高基於 BamTi〇3與CamTi〇3之前述複合效果之作用，藉由添加一定 夏的稀土族元素，可大幅度使高BDV及高ε之並存水準提 高。更具體言之，例如對於ε可獲得5〇〇以上的值，亦能實 現140 kV/mm以上的BDV，最低也能確保1〇〇 kv/mm以上 的 BDV。 構成介電質陶瓷層3之介電質陶瓷，最好更對於前述主 要成分100莫耳份分別包含〜3·0莫耳份、〇 5〜5 〇莫耳份 及1.0〜5·0莫耳份Mn、Mg及Si。如此包含一定量的Μη、 Mg及Si，則對於要求還原性氣氛下之焙燒之以恥為内部電 極4及5的主要成分之積層陶瓷電容丨，亦可獲得高bdv及 高ε，可確保良好的信賴性。 如上所述’構成介電質陶瓷層3之介電質陶兗中，除 (Ba^xCaxhTiO3構成之主要成份以外，還含有稀土族元 素、及/或Mn、Mg及Si的情況下，在為形成應成為介電質 陶究層3之陶究生片而準備之漿料中除BamTi〇3粉末及 127065.doc -10· 200847203
CamTi〇3粉末之外’還添加稀土族元素的氧化物或碳酸化 合物等的粉末及/或Mn、Mg及Si的氧化物或碳酸化合物等 的粉末。
本發明相關之介電質陶瓷，若Ba及Ca為5莫耳％以下， 則可以Sr代換，而Ti若為5莫耳％以下，可以心及/或HfR 換。 其次，為確認本發明之效果，就已實施之實驗例進行說 明。 [實驗例1] 首先，準備有利用固相法合成之BamTi〇3粉末及CamTi〇q 粉末作為主要成分之起始原料，此外，準備有、
La203、Ce02、Pr60"、Nd2〇3、Sm203、Eu203、Gd2〇3、
Tb2〇3、H〇2〇3、EhO3、Tm2〇3、Yb2〇3及 ho3 等稀 土族元 素之氧化物粉末作為副成分之起始原料，同時還準備有 MgO、MnO及Si02之各粉末。
其次，將如上述所準備之BamTi〇3粉末及CamTi〇3粉末 表1所示之組成進行稱量，將此等粉末進行混合，並如_ 之組成添加副成分之起始原料粉末。表1中，稀土族 素、Mg、Μη及Si2之各氧化物粉末的添加量以對於主要 分1〇〇莫耳份之莫耳份表示。其次，將上述混合粉末採 =徑2 nun的PSZ製中間物，利用球磨機於水中混合μ 時，獲得充分分散之漿料。將上述漿料進行乾燥，獲得 電質陶瓷之原料粉末。 127065.doc 200847203 [表i] 試樣 (Bai_xCax)mTi〇3 稀土族元素 Mg [莫耳份] Μη [莫耳份] Si [莫耳份] X m 種類 量Γ莫耳份] 1 0.25 1.005 - 0 1.0 0.5 1.5 2 0.30 1.005 - 0 1.0 0.5 L5 3 0.35 1.005 - 0 1·0 0.5 1.5 4 0.45 1.005 - 0 1,0 0.5 1.5 5 0.50 1.005 - 0 1.0 0.5 1.5 6 0.60 1.005 - 0 1,0 0.5 1.5 7 0.25 1.005 Dy 5 1.0 0.5 1.5 8 0.30 1.005 Dy 5 1.0 0.5 1.5 9 0.35 1.005 Dy 5 1.0 0.5 1.5 10 0.45 1.005 Dy 5 1.0 0.5 1.5 11 0.50 1.005 Dy 5 1·0 0.5 1·5 12 0.60 1.005 Dy 5 1.0 0.5 1.5 13 0.40 1.005 Dy 1 1.0 0.5 1.5 14 0.40 1.005 Dy 3 1.0 0.5 1.5 15 0.40 1.005 Dy 8 1.0 0.5 1.5 16 0.40 1.005 Dy 11 1.0 0.5 1.5 17 0.40 1.005 Dy 14 1.0 0.5 1.5 18 0.40 0.900 Dy 5 1.0 0.5 1.5 19 0.40 0.950 Dy 5 1.0 0.5 1.5 20 0.40 1.025 Dy 5 1.0 0.5 1.5 21 0.40 1.030 Dy 5 1.0 0.5 1.5 22 0.40 1.005 Dy 5 0.0 0.5 1.5 23 0.40 1.005 Dy 5 0.5 0.5 1.5 24 0.40 1.005 Dy 5 5.0 0.5 1·5 25 0.40 1.005 Dy 5 6.0 0.5 1.5 26 0.40 1.005 Dy 5 1.0 0.0 1.5 27 0.40 1.005 Dy 5 1·0 0.1 1.5 28 0.40 1.005 Dy 5 1.0 3.0 1.5 29 0.40 1.005 Dy 5 1.0 4.0 1.5 30 0.40 1.005 Dy 5 1.0 0.5 0.0 31 0.40 1.005 Dy 5 1.0 0.5 1.0 32 0.40 1.005 Dy 5 1.0 0.5 5.0 33 0.40 1.005 Dy 5 1.0 0.5 6.0 34 0.40 1.005 Y 5 1.0 0.5 1.5 35 0.40 1.005 La 5 1.0 0.5 1.5 36 0.40 1.005 Ce 5 1.0 0.5 1.5 37 0.40 1.005 Pr 5 1.0 0.5 1.5 38 0.40 1.005 Nd 5 1.0 0.5 1.5 39 0.40 1.⑽5 Sm 5 1.0 0.5 1.5 40 0.40 1.005 Eu 5 1.0 0.5 1.5 41 0.40 1.005 Gd 5 1.0 0.5 1.5 42 0.40 1.005 Tb 5 1.0 0.5 1.5 43 0.40 1.005 Ho 5 1.0 0.5 1.5 44 0.40 1.005 Er 5 1.0 0.5 1.5
127065.doc •12- 200847203 試樣 編號 (Baj.xCi ax)mTi〇3 ----- 稀土族元素 Mg [莫耳份] L0~ Mn [莫耳份] 〇3 Si [莫耳份] L5 m ~L005~ _SE_ Tm 45 46 0.40 1.005 Yb 47 0.40 L005 D 1.0 0.5 1.5 —-~___ l_L0_ 0.5 1.5 _ • 其次’於上述原料粉末中添加聚乙料縮謂系黏結劑 及乙醇，利用球磨機進行混合，得到陶变聚料。將該陶究 . 漿料利用刮刀法形成片狀，得到陶瓷生片。 :次’於上述陶究生片上絲網印刷以恥為主要成分之導 • 18 ’形成應成為内部電極之導電膏膜。其後，將形成有 ^導電β膜的11片陶究生片層積成拉出導電膏媒之側交 錯’獲得生積層體。 人’將Ji述生積層體在氮氣氛下加熱至細。C之溫 度’使黏結義燒後’於h2_N2_H2〇氣體組成之還原性氣 =中，在⑵代的溫度下培燒2小時，獲得燒結而成之積 層體。該積層體包括有陶竟生片燒結而成之介電質層及導 電貫膜燒結而成之内部電極。 其後，於積層體的兩端面上塗上含玻璃料且以cu為主要 :分之導電膏，在氮氛境中，以80(rc的溫度培燒，形成 =部電極電性連接之外部電極，再於外部電極上形成Ni 電錄膜及Sn電鐘膜，得到與各試樣相關之積層陶究電容。 :此所得到之積層陶究電容之外性尺寸為長度2〇_、 陶二7瓜以及厚度G ·5 m m，介於内部電極之間的介電質 質陶兗層數為,。介電:陶 貝陶是層各層的相對電極面積為 127065.doc •13· 200847203 1·3 mm2 〇 由25°C、1 kHz、1 Vrms條件下測定所得之積層陶瓷電容 的靜電容量求出上述各試樣相關之積層陶瓷電容的構成介 電質陶瓷層之介電質陶瓷的介電常數ε。另外，由25°C溫 度下充電300 V電壓60秒所測得之絕緣電阻求出構成介電 質陶瓷層之介電質陶瓷的電阻率p。此外，於積層陶瓷電 容上，一面以50 V/秒的速度進行升壓，——面施加直流電 壓，求得BDV(平均值）。 • 將如以上所求得之介電常數ε、log p以及BDV示於表2。 並且，表2中還示有作為可對介電常數ε及BDV之並存進行 定量判斷用之指標的sx(BDV)2。 [表2] 試樣編號 ε BDV [kV/mm] εχ (BDV)2 logp [ρ:Ωηι] 1 1500 800 0.96 11.7 2 1000 14 1.96 11.7 3 950 140 1.86 11.5 4 750 150 1.69 11.3 5 650 155 1.56 11.2 6 400 155 0.96 11.0 7 1800 90 1.46 11.0 8 1600 170 4.62 11.0 9 1400 170 4.05 10.8 10 1000 170 2.89 10.6 11 800 180 2.59 10.5 12 400 180 1.30 10.3 13 900 140 1.76 11.2 14 1200 150 2.70 10.7 15 1000 170 2.89 10.5 16 800 170 2.31 10.3 17 600 170 1.73 10.2 18 - - 8.5 127065.doc -14- 200847203 試樣編號 ε BDV [kV/mm] εχ (BDV)2 logp [ρ:Ωηι] 19 1000 160 2.56 10.1 20 980 160 2.51 10.0 21 - - 8.5 22 ^—* - - 8.5 23 1500 160 3.84 10.5 24 1000 170 2.89 10.5 25 - - 8.5 26 - - 8.5 27 1200 170 3.47 10.3 28 1100 170 3.81 10.0 29 1000 180 3.24 9.5 30 一 - 8.5 31 1300 170 3.76 10.5 32 1000 170 2.89 10.0 33 一 一 8.5 34 1350 170 3.90 10.8 35 1400 170 4.05 10.9 36 1250 170 3.61 10.7 37 1400 170 4.05 10.8 38 1300 170 3,76 10.8 39 1350 170 3.90 10.8 40 1180 170 3.41 10.7 41 1220 170 3.53 10.9 42 1290 170 3.73 10.8 43 1410 170 4.07 10.8 44 1360 170 3.93 10.8 45 1340 170 3.87 10.9 46 1290 170 3.73 10.8 47 1300 170 3.76 10.7
試樣1〜6如表1所示，係於不含稀土族元素之組合中使 BamTi03/ CamTi03比變化者。此等試樣1〜6中，依據X為 0.30〜0.50範圍内的試樣2〜5，可確保500以上的ε及120 kV/mm以上的BDV，且中高壓對應目標之超過90 kV/mm之 BDV。與此相對，試樣1由於X小於0.30，因此無法確保 127065.doc -15- 200847203 B〇V為80 kV/mm，且中高壓對應目標之超過90 kV/mm之 保证。另一方面，試樣6由於ε小於5 00，故不利於積層陶 瓷電容之小型化。 試樣7〜12係一面與上述試樣1〜6相比，一面評估添加作 為稀土族元素之Dy的效果者。依據試樣7〜12，與試樣1〜6 相比’ ε及BDV均有所提高，這一點於εχ(Β〇ν)2上有顯著 的體現。並且，若χ偏離〇3〇〜〇50的範圍，則如試樣7及12 所示’稀土族元素添加之效果非常小。 試樣13〜17係為改變稀土族元素Dy之添加量，評估添加 里之影響用者。稀土族元素添加量在卜14莫耳份的範圍 内’可獲得與不含稀土族元素之試樣2〜5同等或更高的s及 BDV。 試樣18〜21係改變m者。m偏離〇·95〇〜1〇25範圍之試樣18 及21，燒結性惡化，ρ降低，無實用性。 試樣22〜33係改變Mg、加量者。對於Mg偏離 〇·5〜5·0莫耳份範圍之試樣22及25，對於Μη偏離(U〜3.0莫 耳份乾圍之試樣20及29，以及對於Si偏離1〇〜5 〇莫耳份範 圍之試樣30及33，ρ降低，無實用性。 忒樣34〜47係經確認亦可適用Dy以外者作為稀土族元素 者。 、 [實驗例2] 實驗例2係對於與實驗m之各試樣相同之組合，且改變 了起始原料之混合方法的情況進行實驗者。即，於實施例 2所製成之試樣101〜147係分別與實驗例!之試樣卜47相同 127065.doc _ 16 _ 200847203 之組合。 首先，準備有3&(!：〇3、（^(1：(>1^»^-
3 LaC〇3以及Ti〇2之各粉末作A 要成分之起始原料’以……3、Ce〇2、Pr6〇
Nd2〇3、Sm2〇3、Eu2〇3、㈤办、几办、叫〇3、Er^、
Tm203、Yb2〇3 及 Lu2〇3 等嫌土 蛀士 I 〆 寺稀土奴疋素之氧化物粉末作為副 ::之起始原料，並且準備有Mg〇、Μη〇及si〇2之各粉 其次，僅將BaC〇3粉末、Ti〇2粉末、稀土族元素的氧化 物粉末以及Mg0粉末進行稱量，得到調合粉末A。同樣， ❿ 另外僅將CaC〇3粉末、Ti〇2粉末、稀土族元素的氧化物粉 末以及MgO粉末進行稱量’得到調合粉末B。此時，使調 合粉末A之Ba成分與調合粉末B之Ca成分之含有比滿足實 驗例1之表1所記載的值。使調合粉末A或3之了丨成分含 有比與各自之Ba成分及〇^成分相比，滿足實驗例丨之表^己 載的m值。關於稀土族成分之含有比，將實驗例丨之表 載之含有量分割成調合粉末A :調合粉末6 = 1^。關於
Mg成分之含有比，利用與稀土族成分相同之方法，分割 成調合粉末A與B。 其次，將調合粉末A及B分別採用直徑2 mm的psz製中 間物，利用球磨機於水中混合16小時，獲得充分分散之漿 料A及B。對於將此等襞料A及B分別乾燥後者，於 900〜ll〇〇°C溫度下進行焙燒，分別獲得焙燒粉末Α&β。 其次，將焙燒粉末A及B進行混合，再將副成分<Μη〇 及Si〇2之粉末添加成與實驗例i相同之組合，採用直徑2瓜瓜 127065.doc -17- 200847203 的PSZ製中間物，利用球磨機於水中混合16小時，獲得充 分分散之漿料。將此漿料進行乾燥，獲得各試樣相關之介 電質陶瓷的原料粉末。 其次，採用上述各試樣相關之介電質陶瓷原料粉末，經 由與實施例1之情況相同之步驟，獲得試樣101〜147各個相 關之積層陶瓷電容。對於與實驗例1之情況相同的項目， 就此等各試樣相關之積層陶瓷電容進行評估。其結果如表 3所示。 [表3]
試樣編號 8 BDV [kV/mm] sx(BDV)2 logp [p:Qm] 101 1700 80 0.00 11.9 102 1100 155 0.00 11.8 103 1000 160 0.00 11.9 104 800 170 0.00 11.6 105 700 165 0.00 11.5 106 420 156 0.00 11.0 107 1950 90 0.00 11.6 108 1750 180 0.00 1L8 109 1550 185 0·00 11.0 110 1000 190 0.00 11.1 111 900 200 0.00 10.9 112 500 195 0.00 10.5 113 1000 160 0.00 11.6 114 1300 165 0.00 11.2 115 1100 175 0.00 10.9 116 700 180 0.00 10.8 117 500 175 0.00 10.4 118 - - - 8.0 119 1100 180 0.00 10.6 120 1020 175 0.00 10.8 121 - - - - 122 - - - 8.3 123 1600 175 0.00 10.9 124 1200 175 0.00 10.9 125 - - - 8.8 127065.doc -18 - 200847203 試樣編號 8 BDV [kV/mm] ex(BDV)2 logp [ρ:Ωπι] 126 - - - 8.1 127 1350 185 0.00 10.6 128 1150 190 0.00 10.8 129 1100 210 0.00 9.0 130 - - - 8,2 131 1250 175 0.00 10.6 132 1080 180 0.00 10.8 133 - - 7.8 134 1200 180 0.00 10.5 135 1300 185 0.00 10.7 136 1250 180 0.00 10.5 137 1500 180 0.00 10.6 138 1250 180 0.00 10.2 139 1180 175 0.00 10.3 140 1200 180 0.00 10.5 141 1280 180 0.00 10.7 142 1350 180 0.00 10.9 143 1500 185 0.00 10.5 144 1350 180 0.00 10.3 145 1190 180 0.00 10.7 146 1200 175 0.00 10.6 147 / 1190 180 0.00 10.5 將表3與表2進行比較可知，於實驗例2所製成之試樣中 至少對於本發明範圍内之試樣，分別與於實驗例1所製成 之試樣1〜47相比，能得到更大的BDV值。 [實驗例3] 實驗例3係對於與實驗例1之各試樣相同之組合，並將起 始原料之混合方法變更成與實驗例2另外不同之方法的情 況進行實驗者。於實驗例3所製成之試樣201〜247係分別與 實驗例1之試樣1〜47相同之組合。 首先，準備有BaC03、CaC03以及Ti02之各粉末作為主 要成分之起始原料，以及Y2O3、La2〇3、Ce〇2、Ρι*6〇ιι、 127065.doc •19- 200847203
Nd203、Sm203、Eu2〇3、Gd2〇3、Tb2〇3、H〇2〇3、私〇3、 Tm2〇3、YhO3及LhO3等稀土族元素之氧化物粉末作為副 成分之起始原料，並且準備有Mg〇、Mn〇及Si〇2之各粉 末。 其次，僅將BaC03粉末、CaC03粉末、Ti〇2粉末、稀土 叔元素的氧化物粉末以及Mg〇粉末進行稱量，除去“^及
Si ’調合成與實驗例1之情況相同之組合，得到調合粉 末。 其次，將混合粉末採用直徑2 mm的PSZ製中間物，利用 球磨機於水中混合16小時，獲得充分分散之漿料。對於將 此漿料乾燥後者，於9〇〇〜ii〇〇°c溫度下進行焙燒，獲得培 燒粉末。 其次，於焙燒粉末中將副成分之MnO及Si02之各粉末添 加成與實施例1之情況相同之組合，採用直徑2 mm的PSZ 製中間物，利用球磨機於水中混合16小時，獲得充分分散 之漿料。將此漿料進行乾燥，獲得各試樣相關之介電質陶 瓷的原料粉末。 其次’採用上述各試樣相關之介電質陶瓷原料粉末，經 由與實施例1之情況相同之步驟，獲得試樣201〜247各個相 關之積層陶究電容。對於與實驗例1之情況相同的項目， 就此等各試樣相關之積層陶瓷電容之試樣進行評估。其結 果如表4所示。 127065.doc 200847203[表4]
試樣編號 8 BDV [kV/mm] 8x(BDV)2 logp [p:Qm] 201 1800 85 0.00 1L8 202 1250 160 0.00 11.4 203 1050 165 0.00 11.6 204 900 175 0.00 11.5 205 850 175 0.00 11·4 206 430 165 0.00 11.6 207 2000 90 0.00 11.5 208 1700 190 0.00 11.4 209 1340 190 0.00 11.0 210 850 195 0.00 11.0 211 900 250 0.00 10.7 212 530 200 0.00 10.2 213 980 165 0.00 11.1 214 1250 170 0.00 10.8 215 1080 180 0.00 10.4 216 800 185 0.00 10.6 217 600 180 0.00 10.1 218 - - - 7.8 219 1050 185 0.00 10.2 220 1100 180 0.00 10.4 221 - - - - 222 - - - 8.0 223 1650 180 0.00 10.1 224 1300 185 0.00 10.5 225 - - - 8.3 226 - - 歸 8.0 227 1400 190 0.00 10.3 228 1200 195 0.00 10.7 229 1100 245 0.00 8,9 230 - - - 8.1 231 1200 180 0.00 10.6 232 1230 185 0.00 10.4 233 - - - 7.9 234 1150 185 0.00 10.3 235 1200 195 0.00 10.7 236 1200 190 0.00 10.3 237 1400 190 0.00 10.4 238 1300 185 0.00 10.0 239 1250 185 0.00 10.1 127065.doc -21- 200847203 試樣編號 8 BDV [kV/mm] ex(BDV)2 logp [ρ:Ωιη] 240 1180 190 0.00 10.6 241 1160 185 0.00 10.5 242 1260 185 0,00 10,7 243 1380 190 0.00 10.1 244 1410 185 0.00 10.0 245 1210 190 0.00 10.2 246 1190 185 0.00 10.3 247 1210 185 0.00 10.0 將表4與表2進行比較可知，於實驗例3所製成之試樣中 至少對於本發明範圍内之試樣，分別與於實驗例1所製成 之試樣1〜47相比，能得到更大的BDV值。 【圖式簡單說明】 圖1係以圖解方式表示依據本發明一實施形態之積層陶 瓷電容1之剖面圖。 【主要元件符號說明】 1 積層陶瓷電容 2 積層體 3 介電質陶瓷 4, 5 内部電極 8, 9 外部電極 127065.doc -22-

Claims (1)

  1. 5. 200847203 十、申請專利範圍： 1· 一種介電質陶瓷，其係以（Bai xCax)mTi〇3 (ο.% -〇·50、為主要成分。 ~X — 2·如請求項1之介電質陶莞， /、τ又耵％上遮主要成分100 莫耳份包含1〜14莫耳份選自Y、La、Ce、pr、Nd、 Sm、Eu、Gd、Tb、Dy、H〇、Er、Tm、冗以及 u 中之 至少一種稀土族元素。 L如請求項…之介電質陶£’其中更對於上述 1〇〇莫耳份分別包含_莫耳份、0.5〜5〇莫耳份： I·0〜5·0莫耳份之Mn、Mg以及si。 4. 一種積層陶瓷電容，其係包含·· 積層體，其係包含層積而成之複數介電質陶究層及沿 述w電貝陶究層間的特定界面所形成之内部電極；及 外邛電極，其係為與上述内部電極之特定者電性連接 而形成於上述積層體外表面上； 上述介電質陶竞層包括如請求項13中*一項之 哲故1炎. 丨电 上述内部電極以Ni為主要成分。 求項4之積層陶瓷電容，其中使用電場為乃 kV/mm，保證絕緣破壞電壓大於9〇kv/mm。 100 127065.doc
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