200811303 (1) 九、發明說明 【發明所屬之技術領域】 本發明係關於一種具有某種通氣槽組態之濺鍍靶材及 含有此濺鍍靶材之裝置。特別的是，本發明之通氣槽組態 經由降低發弧及後續之粒子沉積於基板上而降低缺陷比例 【先前技術】 在製造使用於（例如半導體工業）之應用的濺鍍靶材方 面，希望生產一種靶材，其具有在灑鍍於晶圓上期間將會 提供膜均勻性之濺鍍表面。物理氣相沉積係廣爲使用之製 程’藉此製程，靶材被用來在想要的基板上沉積薄層的材 料。 此製程需要靶材的氣體離子轟撃，此靶材之表面係由 所想要的材料所組成，而該所想要的材料即將被沉積於基 板上做爲薄膜或薄層。靶材之離子轟撃不僅致使靶材材料 的原子或分子被濺射，亦傳遞可觀的熱能予靶材。此熱逸 散於背板下方或環繞於背板，而此背板係位於與靶材成熱 交換關係的位置。靶材形成陰極組成件的一部分，其與陽 極一起放置於充滿鈍氣（氬氣爲較佳）之真空室中。高電壓 電場係施加於陰極及陽極上。鈍氣係藉由與自陰極噴射之 電子碰撞而被離子化。帶正電荷的氣體離子被吸引至陰極 ，且當與靶材表面撞擊時，這些離子使靶材材料移位。這 些移位的靶材材料越過真空罩，且沉積於所想要的基板上 -5- 200811303 (2) 做爲薄膜，而基板的位置通常是接近陽極。 理想上，所沉積的薄膜係高度均勻且沒有缺陷的。然 而，在習知之濺鍍腔室內，大量之不想要的靶材材料塊或 濺滴係形成於基板上。這些缺陷的成因被認爲是源自於一 種被稱爲發弧的現象（當發弧產生時，不想要的效應會發 生在靶材上，例如靶材材料的孔蝕、片剝、裂解、及局部 加熱）。 φ 習知之濺鍍沈積室典型上使用密封表面，此密封表面 具有帶有密封構件（如〇型環）之凹槽，係配置於靶材組 成件與室壁之間，以便形成真空密封。明確地說，密封構 件通常係設置於濺鍍靶材組成件（亦即，所謂的氣軌 (race)或氣流軌道（race track))與真空室的側壁之間，而 此靶材組成件在該真空室中用作爲該室之頂部或上蓋。氣 體有可能被捕陷於由〇型環密封所產生的空間內，而Ο 型環密封係在這種密封表面之凹槽的接合面（mating φ surfaces)之間。因此，在濺鍍製程期間，所捕陷的氣體會 從密封表面凹槽流入真空室內，其導致靶材發弧。 已經做出多種嘗試來減少、消除、或控制這種源自於 所捕陷之氣體的發弧現象。Mostovoy等人在美國專利編 號第641 6634號中揭示複數個通氣槽被組構來限制氣體從 〇型環氣道經由某些限制的開口而流動。其他企圖降低發 弧之通氣槽的再設計也已經被提出。如圖1 A至1 C所例舉 者，通氣槽的幾何樣式已被修改爲增加側壁至凹槽的距離 、增加凹槽寬度，或是兩者之組合。不幸的是，沒有一樣 -6- 200811303 (3) 修改曾被發現是可以充分降低發弧且因而降低基板上所沉 積之薄膜中的缺陷。 爲了克服與相關技術有關的缺點，本發明之目的在於 提供一種新的通氣槽組態，此通氣槽組態有助於在抽氣期 間，將氣體從真空室中去除。 本發明之另一目的在於提供一種通氣槽，此通氣槽之 剖面係設計成不含銳角的半圓形狀，以便使亂流達最小但 φ 不會限制氣體流動。 對於習於此技術者而言，在閱讀了所附加之說明書、 圖示及申請專利範圍後，本發明之其他目的及樣態將變得 顯而易見的。 【發明內容】 濺鍍靶材組成件包含通氣槽，該等通氣槽具有某種組 態，以便降低在膜的物理氣相沉積期間之靶材發弧。 【實施方式】 在經由物理氣相沉積法而在基板上製造薄膜時，必須 了解及使在製程期間因發弧所致之缺陷。 圖2所例舉者爲一習知之濺鍍系統100，其使用一濺 鍍靶材組成件105。該濺鍍靶材組成件包含靶材11 〇及靶 材背板1 1 5，此背板1 1 5延伸超過靶材1 1 〇的直徑，並包 括一周圍邊緣，其與側壁1 2 0介接而構成密封之處理室 1 2 5。參照圖3，此周圍邊緣，或在某些情況中爲濺鍍靶材 200811303 (4) 組成件本身，包括所謂的”氣軌”（race)、”氣流軌道”（race-track)、或凹槽300，其適合來收納密封構件，例如0型 環。將可以了解到密封構件不需要具有Ο型環組態，且可 以是由任何可提供密封功能之材料所製成的。 該氣流軌道包括許多通氣槽3 1 0，其被等間隔地配置 於處理室1 25之內側上。如下文所討論者，當處理區域被 抽氣至真空壓力時，通氣槽讓氣體能夠從那裡被抽氣出去 φ ，否則氣體將會被捕陷於〇型環與內側壁氣流軌道之間。 此所捕陷的氣體可能有多處來源，其包含0型環之釋氣、 空氣從環境濺鍍系統100之周圍環境經由〇型環而滲透向 濺鍍系統100內之真空環境、或是在濺鍍系統100的通氣 期間由〇型環所捕陷之氣體，等等。如果沒有通氣槽的幫 助，所捕陷之氣體將會與 〇型環在氣流軌道內的就座 (seating)相干擾；而且，在真空處理期間，〇型環在凹槽 3 00內之適當的就座對於靶材背板1 15與側壁120間之足 φ 夠的密封而言是必要的。 參照回圖2，灑鍍系統1 00包括磁鐵1 3 0，該磁鐵係 設置於靶材背板1 1 5之上方，此系統亦包括一開關1 3 5， 用以將靶材背板115連接至直流 （D.C·)電壓源140。在 密封處理室125內，基板支架145係位於灑鍍靶材組成件 105的下方。灘鍍系統1〇〇內之基板支架在處理期間適合 來支撐半導體基板150。 在操作期間，第一提升機構155將基板150舉起，且 密封處理室125經由真空泵（未顯示出）而被抽氣至約2至 200811303 (5) 5毫托的壓力（亦即，真空）。關閉開關1 3 5，且相對於基板 支架145，例如約500伏特之大的負電壓被施加於靶材組 成件105上。在靶材組成件105與基板支架145之間產生 相對應的電場。鈍氣（例如氬氣（Α〇)然後被導入室中。 帶正電荷的氬離子 （Ar + )，例如氬離子160，因而被產 生於靶材組成件1〇5與半導體基板150之間。這些帶正電 荷的氬離子朝向帶負電荷之靶材110的表面加速並與之碰 φ 撞。由於這些碰撞的結果，電子會從靶材1 1 〇中發射出。 由於在靶材組成件105與基板支架145之間所產生的 電場，會使每個電子朝向基板支架1 45加速，而且每個電 子會因由磁鐵1 3 0所產生的磁場而以螺旋形軌線方式行進 。這些螺旋形行進之電子最終撞擊到基板上方之氬原子， 以便產生額外之帶正電荷的氬離子，而這些氬離子會朝靶 材1 1 〇加速並與之撞擊。額外的電子因此從靶材1 1 〇中發 射出，其將產生額外之帶正電荷的氬離子，其產生額外的 φ 電子等等。此反饋製程持續，直至基板支架145的上方產 生穩態電漿爲止。 當電漿達到穩態時，基本上沒有帶電粒子的區域形成 在靶材1 1 0的表面與電漿的頂部邊界之間。且，從靶材 1 1 〇中所發射出之個別的電子被認爲是以穿隧方式行進（例 如，以波形式而非以粒子形式）’以便維持此大的電壓差 。如下文進一步所述，有時電漿會產生缺口（breached)， 且大量的帶電粒子通量（類似電流的流動）行進穿過電漿（亦 即，產生電弧）。 -9 - 200811303 (6) 除了電子之外，由於氬離子與靶材1 1 0之間的動量傳 遞，靶材原子會從靶材110中彈射出或 ''濺射出〃。所濺 射的靶材原子行進至半導體基板1 50，並聚集於其上，以 形成靶材材料之薄膜於其上。理想上，此薄膜係高度均勻 且沒有缺陷的。然而，在使用具有通氣槽於其中之習知靶 材背板的濺鍍系統中，相當大量的靶材材料塊或濺滴（亦 即，濺滴缺陷或濺滴）可能出現在藉由濺鍍沉積所形成的 薄膜內。 雖然並不想要被限定於任何特定理論，但一般認爲， 這些濺滴缺陷之成因乃源自於一種發弧所導致之靶材1 〇〇 的局部加熱，其使靶材材料的一部分融化及釋出（liberate) 。所釋出的靶材材料行進至基板1 50，濺散於其上，冷卻 及重新形成，因表面張力之故而形成爲所沉積之薄膜中的 濺滴缺陷。相對於典型的金屬線寬（例如，小於1微米）， 濺滴係非常大（钶如，500微米），且因使金屬線短路而影 響裝置產量。一般認爲，在現今互連金屬化方案中所產生 之多達百分之五十的薄膜內缺陷爲此類所引起之濺滴類型 的缺陷。 已經發現到習知之通氣槽因引發靶材發弧而促使此濺 滴形成。特別是，使用許多個具有特定組態之凹槽會導致 所捕陷的氣體從Ο型環集中流動至處理區域。所集中所捕 陷的氣流朝向所形成之電漿產生一高的捕陷氣體分壓。在 處理期間，由於跨在靶材與基板間之空間上高電壓出現， 所以當所捕陷之氣體離開通氣槽且進入處理區域中時，在 -10- 200811303 (7) 每個通氣槽內之高的捕陷氣體分壓增加了在靶材表面 漿的頂部邊界之間產生發弧的可能性。例如，所捕陷 體帶有足夠的氣壓離開通氣槽而進入電漿，該電槳的 導致所捕陷之氣體原子的電擊穿。因而增加了濺滴形 可能性。 圖 4A爲依據本發明之通氣槽組態的示意圖。如 針對習知濺鍍靶材組成件所討論的，此濺鍍靶材組成 φ 括一具有外圍周邊之靶材背板。然而，如上所述，本 同樣適用於無外圍之靶材組成件。參照圖 4A及圖 此靶材組成件包含一氣流軌道400，以容納一密封構 其中，例如〇型環。與圖2之習知靶材背板1 1 5不同 ，本發明之靶材背板的凹槽具有一內壁410，具有複 凹槽配置於其中，並具有特別的組態。雖然可使用任 目之等間隔的通氣槽，通氣槽42 0的數量較佳爲偶數 便在將真空應用於處理室（亦即，也被稱爲''抽氣〃 φ 間，使氣體從那裡去除平衡。最佳的是，使用八個限 通氣槽，下面將參照圖4C來討論通氣槽之較佳組態 寸。 本發明可包含任意數量之通氣槽，其組態被設計 使快速且完全的抽氣操作，藉以減少低發弧。更明確 ，通氣槽之幾何形狀改變確保0型環之真空側允許所 之空氣或氣體在抽氣期間能夠不受阻擋地流動。結果 發明之通氣槽實質上降低藉由各通氣槽來予以通氣之 陷空氣的濃度，減少被通氣至處理區域之所捕陷氣體 與電 之氣 濃度 成的 前文 件包 發明 4B， 件於 的是 數個 何數 ，以 )期 制的 及尺 來促 地說 捕陷 ，本 所捕 的分 -11 - 200811303 (8) 壓，且因此降低發弧之可能性。 參照圖4C，通氣槽係配置在Ο型環氣道的周圍以可 使〇型環在高真空狀態下維持其完整性，但卻仍可以讓〇 型環之真空側上的氣體通氣到室中之幾何型態。通氣槽較 佳具有半球形或半圓形組態，且其在垂直平面或水平平面 兩者上具有可變之剖面。沒有銳角可促使無限制地氣流， 且使擾動達最小。 φ 如圖4C所例舉者，通氣槽係配置於靶材組成件的周 圍上。該等通氣槽係位於氣流軌道之上，並具有朝向處理 區域之開口。通氣槽的大小可被調整以適用於不同尺寸之 靶材組成件及使用該等靶材組成件之個別的室。在較佳實 施例中，八個半圓形之圓錐形凹槽係以約等距離間隔配置 於氣流軌道之周圍。通氣槽的尺寸可適用於不同大小之凹 槽軌道，且在較佳實施例中，通氣槽被加工到直徑爲 0.200英吋，及深度約爲0.080英吋之尺寸。當然，通氣 Φ 槽深度不能碰及氣流軌道之底部。通氣槽以相隔45度角 的方式被配置於〇型環凹槽內徑與靶材側壁之間。 實例 如圖5所例舉者，依據本發明所組構之通氣槽展現如 同由所分析之基板所示的減少發弧。其以25個晶圓爲一 批次來予以處理，其中，鋁合金材料層係沉積於其上。其 中一批次係使用本發明之靶材來予以處理，該靶材具半球 狀或半圓形組態之通氣槽，且三批次係以另一種靶材來予 -12- 200811303 (9) 以處理，該靶材之通氣槽爲標準的矩形組態。所有的晶圓 皆以13千瓦來進行處理，而室中之壓力爲2.1托（Torr) ，使用期限（lifetime)爲950 kWh(亦即，直至該靶材被完 全消耗爲止）。如下表所示，鋁合金之沉積厚度爲4 0 0 0埃 ，且測量缺陷。200811303 (1) Description of the Invention [Technical Field] The present invention relates to a sputtering target having a certain venting groove configuration and a device containing the same. In particular, the venting tank configuration of the present invention reduces the proportion of defects by reducing arcing and subsequent deposition of particles on the substrate. [Prior Art] In the manufacture of sputtering targets for applications such as the semiconductor industry, A target is produced that has a sputtered surface that will provide film uniformity during sprinkling on the wafer. Physical vapor deposition is a widely used process by which a target is used to deposit a thin layer of material on a desired substrate. This process requires gas ion bombardment of the target, the surface of the target being composed of the desired material, and the desired material is to be deposited on the substrate as a film or a thin layer. The ion bombardment of the target not only causes the atoms or molecules of the target material to be sputtered, but also transfers considerable thermal energy to the target. This heat is dissipated below the backing plate or around the backing plate, which is in a heat exchange relationship with the target. The target forms part of a cathode component which, together with the anode, is placed in a vacuum chamber filled with a blunt gas (argon is preferred). A high voltage electric field is applied to the cathode and anode. The obtuse gas is ionized by collision with electrons ejected from the cathode. Positively charged gas ions are attracted to the cathode and these ions displace the target material when struck against the target surface. These displaced target materials pass over the vacuum envelope and are deposited on the desired substrate -5 - 200811303 (2) as a film, and the substrate is typically positioned close to the anode. Ideally, the deposited film is highly uniform and defect free. However, in conventional sputtering chambers, a large number of unwanted target material blocks or splash lines are formed on the substrate. The cause of these defects is thought to stem from a phenomenon known as arcing (when arcing occurs, unwanted effects occur on the target, such as pitting, stripping, cracking of the target material, And local heating). The conventional sputtering sputter deposition chamber typically employs a sealing surface having a recess with a sealing member (e.g., a serpentine ring) disposed between the target assembly and the chamber wall to form a vacuum seal. Specifically, the sealing member is usually disposed between the sputtering target component (that is, a so-called race or race track) and the sidewall of the vacuum chamber, and the target component is The vacuum chamber is used as the top or top cover of the chamber. It is possible for the gas to be trapped in the space created by the 〇-ring seal, and the Ο-ring seal is between the mating surfaces of the grooves of the sealing surface. Therefore, during the sputtering process, the trapped gas flows into the vacuum chamber from the sealing surface groove, which causes the target to arc. Various attempts have been made to reduce, eliminate, or control the arcing phenomenon resulting from the trapped gas. U.S. Patent No. 6,641,634 to the disclosure of U.S. Patent No. 6,416,634, the disclosure of which is incorporated herein by reference to the entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire entire all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all all Other redesigns of venting slots that attempt to reduce arcing have also been proposed. As exemplified in Figures 1A through 1C, the geometry of the venting groove has been modified to increase the distance from the sidewall to the groove, increase the width of the groove, or a combination of the two. Unfortunately, there is no such thing as -6- 200811303 (3) Modifications have been found to be sufficient to reduce arcing and thus reduce defects in the film deposited on the substrate. In order to overcome the disadvantages associated with the related art, it is an object of the present invention to provide a new venting tank configuration that facilitates the removal of gas from the vacuum chamber during pumping. Another object of the present invention is to provide a venting groove which is designed to have a semi-circular shape without an acute angle so as to minimize turbulence but φ does not restrict gas flow. Other objects and aspects of the present invention will become apparent to those skilled in the art. SUMMARY OF THE INVENTION A sputter target component comprises a venting groove having a configuration to reduce arcing of the target during physical vapor deposition of the film. [Embodiment] When a film is formed on a substrate by physical vapor deposition, it is necessary to understand and cause defects due to arcing during the process. 2 is exemplified by a conventional sputtering system 100 that uses a sputtering target component 105. The sputtering target component comprises a target 11 〇 and a target backing plate 1 15 , the backing plate 1 15 extends beyond the diameter of the target 1 1 ,, and includes a peripheral edge, which is interposed with the sidewall 1 2 0 The processing chamber 1 2 5 which is sealed is formed. Referring to Figure 3, this peripheral edge, or in some cases the sputter target 200811303 (4) component itself, includes so-called "race", "race-track", or concave A trough 300 is adapted to receive a sealing member, such as a 0-ring. It will be appreciated that the sealing member does not need to have a Ο-ring configuration and can be made of any material that provides a sealing function. The airflow track includes a plurality of venting slots 310, which are disposed at equal intervals on the inside of the processing chamber 135. As discussed below, when the treatment zone is evacuated to vacuum pressure, the venting tank allows gas to be pumped out of φ therefrom, otherwise the gas will be trapped between the 〇-ring and the inner sidewall airflow trajectory. The gas trapped may have multiple sources, including the outgassing of the 0-ring, the infiltration of air from the ambient environment of the environmental sputtering system 100 into the vacuum environment within the sputtering system 100 via the 〇-ring, or The gas trapped by the 〇-ring during the venting of the sputtering system 100, and the like. Without the aid of a venting groove, the trapped gas will interfere with the seating of the 〇-ring in the airflow track; and, during vacuum processing, the 〇-ring is appropriate within the groove 00 Seating is necessary for a sufficient seal between the target backing plate 1 15 and the side wall 120. Referring back to FIG. 2, the sputter system 100 includes a magnet 130, which is disposed above the target backing plate 115, and the system also includes a switch 135 for connecting the target backing plate 115. To a direct current (DC) voltage source 140. Within the sealed processing chamber 125, the substrate holder 145 is positioned below the sputter target component 105. The substrate holder within the bank plating system is adapted to support the semiconductor substrate 150 during processing. During operation, the first lift mechanism 155 lifts the substrate 150 and the sealed process chamber 125 is evacuated via a vacuum pump (not shown) to a pressure of about 2 to 200811303 (5) 5 milliTorr (ie, vacuum). . The switch 135 is turned off, and a negative voltage of, for example, about 500 volts is applied to the target assembly 105 with respect to the substrate holder 145. A corresponding electric field is generated between the target component 105 and the substrate holder 145. An blunt gas (e.g., argon (Α〇) is then introduced into the chamber. Positively charged argon ions (Ar + ), such as argon ions 160, are thus produced between the target component 1〇5 and the semiconductor substrate 150. These positively charged argon ions accelerate toward and collide with the surface of the negatively charged target 110. As a result of these collisions, electrons are emitted from the target 1 1 。. Due to the target component 105 The electric field generated between the substrate holder 145 accelerates each electron toward the substrate holder 145, and each electron travels in a spiral trajectory due to the magnetic field generated by the magnet 130. These spiral travels The electrons eventually impinge on the argon atoms above the substrate to create additional positively charged argon ions that will accelerate toward and collide with the target 1 1 。. The additional electrons are thus from the target 1 1 Emitted, which will generate additional positively charged argon ions, which generate additional φ electrons, etc. This feedback process continues until a steady state plasma is produced above the substrate support 145. When the plasma reaches steady state, A region having no charged particles is formed between the surface of the target 110 and the top boundary of the plasma. Moreover, the individual electrons emitted from the target 1 1 被 are considered to be tunneling. (for example, in the form of waves rather than in the form of particles)' in order to maintain this large voltage difference. As described further below, sometimes the plasma creates a gaped, and a large amount of charged particle flux (current-like flow) Traveling through the plasma (ie, generating an arc). -9 - 200811303 (6) In addition to the electrons, the target atoms will pass from the target 110 due to the momentum transfer between the argon ions and the target 110. Ejecting or 'sputtering out the crucible. The sputtered target atoms travel to the semiconductor substrate 150 and are collected thereon to form a film of the target material thereon. Ideally, the film is highly uniform and has no Defective. However, in a sputtering system using a conventional target backing plate having a venting groove therein, a considerable amount of target material pieces or splashes (ie, splash drops or splashes) may appear to be borrowed. Deposited in a film formed by sputtering. Although not intended to be limited to any particular theory, it is believed that the cause of these drop defects is due to a localized heating of the target 1 导致 caused by arcing, which causes a portion of the target material to melt and Licensing. The released target material travels to the substrate 150, is spattered thereon, cooled and reformed, and is formed as a drop drop in the deposited film due to surface tension. The metal line width (for example, less than 1 micron), the splashing system is very large (for example, 500 microns), and the device output is affected by shorting the metal wire. It is generally believed to be produced in today's interconnect metallization scheme. Up to 50% of the film defects are defects of the type of splash caused by such. It has been found that conventional venting grooves cause this drop to form due to the initiation of arcing of the target. In particular, the use of a number of grooves with a specific configuration causes the trapped gas to flow from the Ο-type ring to the treatment zone. The concentrated trapped gas stream produces a high trap gas partial pressure toward the formed plasma. During processing, due to the high voltage appearing across the space between the target and the substrate, when the trapped gas leaves the venting groove and enters the processing zone, it is within each venting groove of -10-200811303 (7) The high partial trapping gas partial pressure increases the likelihood of arcing between the top boundaries of the target surface slurry. For example, the trap has sufficient gas pressure to exit the venting channel and enter the plasma, which causes electrical breakdown of the trapped gas atoms. This increases the likelihood of splashing. 4A is a schematic illustration of a configuration of a venting channel in accordance with the present invention. As discussed for conventional sputtering target components, the sputtering target composition φ includes a target backing having a peripheral perimeter. However, as described above, the same applies to components without a peripheral component. Referring to Figure 4A and Figure 1, the target assembly includes an air flow track 400 for receiving a sealed structure, such as a 〇-shaped ring. Unlike the conventional target backing plate 115 of Fig. 2, the recess of the target backing plate of the present invention has an inner wall 410 having a recessed groove disposed therein and having a special configuration. Although it is possible to use equally spaced venting slots, the number of venting slots 42 0 is preferably even when vacuum is applied to the processing chamber (i.e., also referred to as ''exhaust 〃 φ, to allow gas from there The balance is removed. Preferably, eight limited venting slots are used, and a preferred configuration of the venting slots will be discussed below with reference to Figure 4C. The present invention can include any number of venting slots, the configuration of which is designed to be fast and complete The pumping operation is used to reduce the low arcing. More specifically, the geometry of the venting groove is changed to ensure that the vacuum side of the 0-ring allows the air or gas to flow unimpeded during pumping. The concentration of trapped air that is ventilated by each venting groove is reduced, and the concentration of trapped gas and electric gas that is vented to the treatment area is reduced. The system and the ruler to promote the trap, the score of the company is -11 - 200811303 (8), and therefore reduce the possibility of arcing. Referring to Fig. 4C, the venting groove is disposed around the Ο-type air passage to maintain the integrity of the 〇-type ring under high vacuum, but still allows the gas on the vacuum side of the 〇-type ring to ventilate into the chamber. Geometry. The venting groove preferably has a hemispherical or semi-circular configuration and has a variable profile in either a vertical plane or a horizontal plane. The absence of an acute angle promotes unrestricted airflow and minimizes disturbance. φ As exemplified in Fig. 4C, the venting groove is disposed around the target member. The venting slots are located above the airflow track and have openings toward the processing area. The venting groove can be sized to accommodate different sized target components and individual chambers that use the target components. In a preferred embodiment, eight semi-circular conical grooves are disposed about equidistantly spaced around the airflow track. The size of the venting groove can be adapted to different sized groove tracks, and in the preferred embodiment, the venting groove is machined to a diameter of 0.200 inches and a depth of about 0.080 inches. Of course, the ventilation Φ groove depth cannot touch the bottom of the air flow track. The venting groove is disposed between the inner diameter of the groove of the 〇 ring and the side wall of the target at an angle of 45 degrees. EXAMPLES As exemplified in Figure 5, the venting grooves constructed in accordance with the present invention exhibit reduced arcing as indicated by the substrate being analyzed. It is processed in batches of 25 wafers on which a layer of aluminum alloy material is deposited. One of the batches was treated with a target of the present invention having a hemispherical or semi-circular configuration of a venting groove, and three batches were given to another target -12-200811303 (9) To handle, the venting channel of the target is a standard rectangular configuration. All wafers are processed at 13 kilowatts with a pressure of 2.1 Torr and a lifetime of 950 kWh (i.e., until the target is completely consumed). As shown in the table below, the aluminum alloy was deposited to a thickness of 400 angstroms and the defects were measured.
靶材上之通 氣槽的類型 工具 處理批次 缺陷批次 缺陷比例 本發明（半球 形組態） TSP 143 48 2 4% 習知的 (矩形組態） TBM 150 54 7 1 3 % TBM 144 92 17 18% TSP 145 63 9 14% 正常平均値 209 33 15% 差異 1 1 % 因此，如上表所例舉者，本發明之具半球形凹槽之靶 材，在降低因發弧而產生的缺陷上獲得了 11%的改進。同 樣的，這些結果係以圖形方式顯示於圖5中。 雖然參照特定之實施例來詳細說明本發明，對於熟習 此類技術的人士而言，在不違離所附加之申請專利範圍的 範疇下能夠做成各種改變或修正與使用等同之物將是顯而 易見的。 【圖式簡單說明】 -13- 200811303 (10) 從以下較佳實施例之詳述配合附圖，將能更加了解本 發明之目的與優點，在各圖中，相同的數字表示相同的特 徵，其中： 圖1 A至1 C係濺鍍靶材組成件之圖形表示，其中，通 氣槽的尺寸已被改變； 圖2係一習知之磁控式濺鍍系統之示意圖； 圖3例舉靶材背板之透視圖，此背板具有一氣流軌道 φ ，其中容納有配置於其中之密封構件及通氣槽； 圖4A描述據本發明之通氣槽的示意圖； 圖4B例舉濺鍍靶材組成件之透視圖，該組成件具有 八個半圓形之圓椎形凹槽，此等凹槽係位於與氣流軌道相 接的位置； 圖4C係依據本發明所製造之濺鍍靶材的真實表示； 及 圖5例舉配置半圓形凹槽之靶材組成件與配置習知凹 m 槽之靶材組成件之性能比較圖。 【主要元件符號說明】 100 :習知之濺鍍系統 105 :濺鍍靶材組成件 1 1 0 :靶材 1 1 5 :靶材背板 1 2 0 :側壁 125 :處理室 14- 200811303 (11) 1 3 0 :磁鐵 1 3 5 :開關 1 4 0 :直流電源 145 :基板支架 150 :半導體基板 1 5 5 :第一提升機構 160:帶正電荷的氬離子 φ 3 0 0 :凹槽 3 1 0 :通氣槽 4 0 0 :氣流軌道 4 1 0 :內壁 4 2 0 :通氣槽Type of venting groove on target tool Handling batch defect batch defect ratio The present invention (hemispherical configuration) TSP 143 48 2 4% Conventional (rectangular configuration) TBM 150 54 7 1 3 % TBM 144 92 17 18% TSP 145 63 9 14% Normal average 値 209 33 15% Difference 1 1 % Therefore, as exemplified in the above table, the target of the hemispherical groove of the present invention reduces the defects caused by arcing. Received an 11% improvement. Again, these results are graphically shown in Figure 5. Although the present invention will be described in detail with reference to the specific embodiments thereof, it will be obvious to those skilled in the art that various changes or modifications and equivalents can be made without departing from the scope of the appended claims. of. BRIEF DESCRIPTION OF THE DRAWINGS The objects and advantages of the present invention will become more apparent from the detailed description of the preferred embodiments illustrated herein Wherein: Figure 1 A to 1 C is a graphical representation of the component of the sputter target, wherein the size of the venting groove has been changed; Figure 2 is a schematic view of a conventional magnetron sputtering system; Figure 3 illustrates the target a perspective view of the backboard having an air flow track φ in which a sealing member and a venting groove disposed therein are accommodated; FIG. 4A is a schematic view showing a venting groove according to the present invention; FIG. 4B is a view showing a component of a sputtering target In perspective view, the component has eight semi-circular circular shaped grooves that are located in contact with the airflow track; Figure 4C is a true representation of the sputter target made in accordance with the present invention. And Figure 5 illustrates a comparison of the performance of the target component with a semi-circular groove and the target component of a conventional concave m-slot. [Main component symbol description] 100: Conventional sputtering system 105: Sputtering target component 1 1 0 : Target 1 1 5 : Target backing plate 1 2 0 : Side wall 125: Processing chamber 14 - 200811303 (11) 1 3 0 : Magnet 1 3 5 : Switch 1 4 0 : DC power supply 145 : Substrate holder 150 : Semiconductor substrate 1 5 5 : First lifting mechanism 160 : Positively charged argon ions φ 3 0 0 : Groove 3 1 0 : venting groove 4 0 0 : air flow track 4 1 0 : inner wall 4 2 0 : venting groove