TW200802810A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- TW200802810A TW200802810A TW096110544A TW96110544A TW200802810A TW 200802810 A TW200802810 A TW 200802810A TW 096110544 A TW096110544 A TW 096110544A TW 96110544 A TW96110544 A TW 96110544A TW 200802810 A TW200802810 A TW 200802810A
- Authority
- TW
- Taiwan
- Prior art keywords
- contacts
- storage node
- center positions
- cell
- cell contacts
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- General Engineering & Computer Science (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006111009A JP5694625B2 (ja) | 2006-04-13 | 2006-04-13 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200802810A true TW200802810A (en) | 2008-01-01 |
| TWI355736B TWI355736B (en) | 2012-01-01 |
Family
ID=38604028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096110544A TWI355736B (en) | 2006-04-13 | 2007-03-27 | Semiconductor storage device |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US8093724B2 (zh) |
| JP (1) | JP5694625B2 (zh) |
| CN (1) | CN101055871B (zh) |
| TW (1) | TWI355736B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI488263B (zh) * | 2009-02-16 | 2015-06-11 | 三星電子股份有限公司 | 包括接觸插塞之半導體裝置及相關方法 |
| TWI779283B (zh) * | 2019-09-25 | 2022-10-01 | 南亞科技股份有限公司 | 半導體裝置及其製造方法 |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100649313B1 (ko) * | 2005-12-29 | 2006-11-24 | 동부일렉트로닉스 주식회사 | 반도체 소자의 이중 금속배선 및 그 제조 방법 |
| TWI340435B (en) * | 2007-07-11 | 2011-04-11 | Nanya Technology Corp | Dynamic random access memory with electrostatic discharge structure and method for manufacturing the same |
| CN101990636A (zh) | 2008-04-09 | 2011-03-23 | 株式会社尼康 | 表面检查方法和表面检查装置 |
| JP5693809B2 (ja) | 2008-07-04 | 2015-04-01 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置及びその製造方法 |
| JP2010123664A (ja) | 2008-11-18 | 2010-06-03 | Elpida Memory Inc | 不揮発性メモリ装置 |
| JP5679628B2 (ja) * | 2008-12-16 | 2015-03-04 | ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． | 半導体装置及びその製造方法 |
| JP2010161173A (ja) | 2009-01-07 | 2010-07-22 | Renesas Electronics Corp | 半導体記憶装置 |
| JP2010232408A (ja) | 2009-03-27 | 2010-10-14 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| KR101616044B1 (ko) * | 2009-07-03 | 2016-04-28 | 삼성전자주식회사 | 무전해 도금에 의해 형성된 랜딩 패드를 포함한 반도체 소자 |
| KR101179265B1 (ko) * | 2009-09-14 | 2012-09-03 | 에스케이하이닉스 주식회사 | 반도체 소자의 스토리지노드 전극 형성방법 |
| CN102024809B (zh) * | 2009-09-15 | 2013-05-08 | 中芯国际集成电路制造(上海)有限公司 | 具有电容器结构的集成电路器件及其制作方法 |
| CN102456396A (zh) * | 2010-10-26 | 2012-05-16 | 中国科学院上海微系统与信息技术研究所 | 相变存储阵列的位线结构 |
| JP5621541B2 (ja) * | 2010-11-19 | 2014-11-12 | ソニー株式会社 | 記憶装置 |
| KR101168391B1 (ko) | 2010-12-17 | 2012-07-25 | 에스케이하이닉스 주식회사 | 반도체 소자 |
| JP2012234964A (ja) | 2011-04-28 | 2012-11-29 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| JP2012248686A (ja) * | 2011-05-27 | 2012-12-13 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| KR101883294B1 (ko) | 2012-03-28 | 2018-07-30 | 삼성전자주식회사 | 반도체 소자의 미세 패턴 형성 방법 |
| JP2014022388A (ja) | 2012-07-12 | 2014-02-03 | Ps4 Luxco S A R L | 半導体装置及びその製造方法 |
| TWI488288B (zh) * | 2012-11-07 | 2015-06-11 | Inotera Memories Inc | 半導體佈局結構 |
| KR102071528B1 (ko) * | 2013-08-12 | 2020-03-02 | 삼성전자주식회사 | 일체형의 지지대를 구비한 반도체 소자 |
| KR102079283B1 (ko) * | 2013-10-15 | 2020-02-19 | 삼성전자 주식회사 | Ｔｓｖ 구조를 구비한 집적회로 소자 및 그 제조 방법 |
| KR102185661B1 (ko) | 2014-02-07 | 2020-12-02 | 삼성전자주식회사 | 비트 라인 구조체 및 스토리지 컨택 플러그를 포함하는 반도체 소자 |
| JP2015211108A (ja) * | 2014-04-25 | 2015-11-24 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| KR102214506B1 (ko) | 2014-08-21 | 2021-02-09 | 삼성전자 주식회사 | 콘택 플러그를 포함하는 반도체 소자 및 그 제조 방법 |
| US9704871B2 (en) | 2014-09-18 | 2017-07-11 | Micron Technology, Inc. | Semiconductor device having a memory cell and method of forming the same |
| JP2016066775A (ja) | 2014-09-18 | 2016-04-28 | マイクロン テクノロジー， インク． | 半導体装置及びその製造方法 |
| CN105720059B (zh) * | 2014-12-02 | 2018-09-14 | 华邦电子股份有限公司 | 动态随机存取存储器 |
| JP6664155B2 (ja) * | 2015-06-11 | 2020-03-13 | 株式会社ミツトヨ | 光学式エンコーダ |
| CN106783743B (zh) * | 2015-11-23 | 2019-07-26 | 华邦电子股份有限公司 | 存储器装置及其制造方法 |
| CN107093604A (zh) * | 2017-04-27 | 2017-08-25 | 睿力集成电路有限公司 | 动态随机存取存储器及其制造方法 |
| US10217748B2 (en) * | 2017-05-25 | 2019-02-26 | Winbond Electronics Corp. | Dynamic random access memory and method of manufacturing the same |
| KR102411071B1 (ko) | 2017-05-29 | 2022-06-21 | 삼성전자주식회사 | 반도체 장치 |
| CN107706180A (zh) * | 2017-10-20 | 2018-02-16 | 睿力集成电路有限公司 | 存储器及其制备方法、半导体器件 |
| CN109698193B (zh) * | 2017-10-24 | 2024-02-09 | 长鑫存储技术有限公司 | 一种半导体存储器的阵列结构 |
| CN107845633B (zh) * | 2017-10-30 | 2023-05-12 | 长鑫存储技术有限公司 | 存储器及其制造方法 |
| US10692872B2 (en) * | 2017-12-12 | 2020-06-23 | Varian Semiconductor Equipment Associates, Inc. | Device structure for forming semiconductor device having angled contacts |
| CN108831884A (zh) * | 2018-06-08 | 2018-11-16 | 长鑫存储技术有限公司 | 存储器结构及其制备方法 |
| KR102581399B1 (ko) | 2018-11-02 | 2023-09-22 | 삼성전자주식회사 | 반도체 메모리 소자 |
| CN111446236B (zh) * | 2019-01-16 | 2023-08-08 | 中芯国际集成电路制造(上海)有限公司 | 带状单元版图及存储器版图、带状单元结构及存储器 |
| KR102787841B1 (ko) | 2019-10-21 | 2025-03-31 | 삼성전자주식회사 | 반도체 메모리 소자 |
| KR102760058B1 (ko) * | 2019-12-30 | 2025-01-24 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그 제조 방법 |
| US12293914B2 (en) | 2020-03-06 | 2025-05-06 | Nanya Technology Corporation | Semiconductor device structure and method for preparing the same |
| CN111584487B (zh) * | 2020-05-28 | 2022-01-28 | 福建省晋华集成电路有限公司 | 动态随机存取内存结构 |
| CN111900169A (zh) * | 2020-08-06 | 2020-11-06 | 无锡拍字节科技有限公司 | 具有椭圆形电容单元阵列的存储器及其制造方法 |
| US11563008B2 (en) * | 2021-03-08 | 2023-01-24 | Micron Technology, Inc. | Integrated memory with redistribution of capacitor connections, and methods of forming integrated memory |
| CN113540094B (zh) * | 2021-07-15 | 2024-11-12 | 芯盟科技有限公司 | 半导体结构及其形成方法 |
| KR20230053050A (ko) * | 2021-10-13 | 2023-04-21 | 삼성전자주식회사 | 반도체 메모리 소자 및 이의 제조 방법 |
| CN115295549A (zh) * | 2022-07-29 | 2022-11-04 | 芯盟科技有限公司 | 半导体结构及其形成方法 |
| KR20240143400A (ko) * | 2023-03-24 | 2024-10-02 | 삼성전자주식회사 | 반도체 메모리 장치 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2792211B2 (ja) * | 1990-07-06 | 1998-09-03 | 日本電気株式会社 | 半導体記憶装置 |
| JP3137185B2 (ja) * | 1998-04-09 | 2001-02-19 | 日本電気株式会社 | 半導体記憶装置 |
| US6211544B1 (en) * | 1999-03-18 | 2001-04-03 | Infineon Technologies North America Corp. | Memory cell layout for reduced interaction between storage nodes and transistors |
| JP3902369B2 (ja) * | 1999-12-27 | 2007-04-04 | エルピーダメモリ株式会社 | 半導体集積回路装置の製造方法 |
| US6396096B1 (en) * | 2000-06-21 | 2002-05-28 | International Business Machines Corporation | Design layout for a dense memory cell structure |
| JP4150154B2 (ja) * | 2000-08-21 | 2008-09-17 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| KR100480601B1 (ko) * | 2002-06-21 | 2005-04-06 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조방법 |
| KR100502410B1 (ko) * | 2002-07-08 | 2005-07-19 | 삼성전자주식회사 | 디램 셀들 |
| KR100505656B1 (ko) * | 2002-12-10 | 2005-08-04 | 삼성전자주식회사 | 스토리지 전극과의 접촉 면적을 보다 확보하기 위해서비트 라인 방향으로 확장된 콘택체를 포함하는 반도체소자 제조 방법 |
| KR100532435B1 (ko) * | 2003-05-15 | 2005-11-30 | 삼성전자주식회사 | 스토리지 노드 및 저항체를 포함하는 반도체 메모리 소자및 그 제조방법 |
| KR100555564B1 (ko) * | 2004-03-31 | 2006-03-03 | 삼성전자주식회사 | 스퀘어형 스토리지 전극을 채용하는 반도체 소자 및 그제조 방법 |
| JP4729861B2 (ja) * | 2004-04-02 | 2011-07-20 | 株式会社日立製作所 | 半導体記憶装置 |
| JP4653426B2 (ja) * | 2004-06-25 | 2011-03-16 | セイコーエプソン株式会社 | 半導体装置 |
| US7547936B2 (en) * | 2004-10-08 | 2009-06-16 | Samsung Electronics Co., Ltd. | Semiconductor memory devices including offset active regions |
-
2006
- 2006-04-13 JP JP2006111009A patent/JP5694625B2/ja active Active
-
2007
- 2007-03-15 US US11/686,885 patent/US8093724B2/en not_active Ceased
- 2007-03-27 TW TW096110544A patent/TWI355736B/zh active
- 2007-04-11 CN CN200710091796.6A patent/CN101055871B/zh active Active
-
2011
- 2011-12-06 US US13/311,720 patent/US8378499B2/en active Active
-
2014
- 2014-01-10 US US14/152,259 patent/USRE47240E1/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI488263B (zh) * | 2009-02-16 | 2015-06-11 | 三星電子股份有限公司 | 包括接觸插塞之半導體裝置及相關方法 |
| TWI779283B (zh) * | 2019-09-25 | 2022-10-01 | 南亞科技股份有限公司 | 半導體裝置及其製造方法 |
| TWI799338B (zh) * | 2019-09-25 | 2023-04-11 | 南亞科技股份有限公司 | 半導體裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007287794A (ja) | 2007-11-01 |
| CN101055871A (zh) | 2007-10-17 |
| USRE47240E1 (en) | 2019-02-12 |
| JP5694625B2 (ja) | 2015-04-01 |
| US8093724B2 (en) | 2012-01-10 |
| US20120132972A1 (en) | 2012-05-31 |
| US8378499B2 (en) | 2013-02-19 |
| CN101055871B (zh) | 2011-06-15 |
| US20070241380A1 (en) | 2007-10-18 |
| TWI355736B (en) | 2012-01-01 |
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