TW200802818A - Nonvolatile memory device and method of fabricating the same - Google Patents
Nonvolatile memory device and method of fabricating the sameInfo
- Publication number
- TW200802818A TW200802818A TW096102035A TW96102035A TW200802818A TW 200802818 A TW200802818 A TW 200802818A TW 096102035 A TW096102035 A TW 096102035A TW 96102035 A TW96102035 A TW 96102035A TW 200802818 A TW200802818 A TW 200802818A
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- memory device
- nonvolatile memory
- insulating film
- semiconductor substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060006449A KR100791331B1 (ko) | 2006-01-20 | 2006-01-20 | 비휘발성 메모리 장치 및 그 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200802818A true TW200802818A (en) | 2008-01-01 |
| TWI337404B TWI337404B (en) | 2011-02-11 |
Family
ID=38284688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096102035A TWI337404B (en) | 2006-01-20 | 2007-01-19 | Nonvolatile memory device and method of fabricating the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7560765B2 (zh) |
| JP (1) | JP2007194638A (zh) |
| KR (1) | KR100791331B1 (zh) |
| TW (1) | TWI337404B (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2686882A4 (en) * | 2011-03-15 | 2014-11-12 | Hewlett Packard Development Co | STORAGE CELL WITH STRUCTURE OF A CLOSED CURVE |
| US8592921B2 (en) * | 2011-12-07 | 2013-11-26 | International Business Machines Corporation | Deep trench embedded gate transistor |
| US10312248B2 (en) * | 2014-11-12 | 2019-06-04 | Silicon Storage Technology, Inc. | Virtual ground non-volatile memory array |
| US11362218B2 (en) * | 2020-06-23 | 2022-06-14 | Silicon Storage Technology, Inc. | Method of forming split gate memory cells with thinned side edge tunnel oxide |
| CN116471844A (zh) | 2022-01-11 | 2023-07-21 | 联华电子股份有限公司 | 半导体存储器元件及存储单元 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010004268A (ko) | 1999-06-28 | 2001-01-15 | 김영환 | 스플리트 게이트 플래쉬 이이피롬 셀의 제조방법 |
| US6204126B1 (en) | 2000-02-18 | 2001-03-20 | Taiwan Semiconductor Manufacturing Company | Method to fabricate a new structure with multi-self-aligned for split-gate flash |
| US6403494B1 (en) | 2000-08-14 | 2002-06-11 | Taiwan Semiconductor Manufacturing Company | Method of forming a floating gate self-aligned to STI on EEPROM |
| KR100634162B1 (ko) * | 2002-05-15 | 2006-10-17 | 삼성전자주식회사 | 스플리트 게이트 메모리 장치 및 그 제조방법 |
| US7064978B2 (en) * | 2002-07-05 | 2006-06-20 | Aplus Flash Technology, Inc. | Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout |
| KR20040022356A (ko) * | 2002-09-05 | 2004-03-12 | 삼성전자주식회사 | 불휘발성 메모리 장치의 게이트 전극 제조 방법 |
| KR20050005057A (ko) | 2003-07-01 | 2005-01-13 | 삼성전자주식회사 | 비휘발성 반도체 소자 및 그 제조방법 |
| KR100986632B1 (ko) * | 2003-09-29 | 2010-10-08 | 매그나칩 반도체 유한회사 | 플래시 메모리의 컨트롤 게이트 제조방법 |
| KR100501648B1 (ko) * | 2003-11-13 | 2005-07-18 | 매그나칩 반도체 유한회사 | 비휘발성 메모리 소자의 제조 방법 |
-
2006
- 2006-01-20 KR KR1020060006449A patent/KR100791331B1/ko not_active Expired - Fee Related
-
2007
- 2007-01-18 US US11/624,464 patent/US7560765B2/en active Active
- 2007-01-19 JP JP2007010593A patent/JP2007194638A/ja active Pending
- 2007-01-19 TW TW096102035A patent/TWI337404B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070076934A (ko) | 2007-07-25 |
| US20070170490A1 (en) | 2007-07-26 |
| JP2007194638A (ja) | 2007-08-02 |
| KR100791331B1 (ko) | 2008-01-03 |
| TWI337404B (en) | 2011-02-11 |
| US7560765B2 (en) | 2009-07-14 |
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