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TW200801227A - Method of depositing chalcogenide film for phase-change memory - Google Patents

Method of depositing chalcogenide film for phase-change memory

Info

Publication number
TW200801227A
TW200801227A TW096118178A TW96118178A TW200801227A TW 200801227 A TW200801227 A TW 200801227A TW 096118178 A TW096118178 A TW 096118178A TW 96118178 A TW96118178 A TW 96118178A TW 200801227 A TW200801227 A TW 200801227A
Authority
TW
Taiwan
Prior art keywords
phase
change memory
chalcogenide film
film
depositing
Prior art date
Application number
TW096118178A
Other languages
English (en)
Other versions
TWI366608B (en
Inventor
Yu-Min Jung
Ki-Hoon Lee
Original Assignee
Ips Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ips Ltd filed Critical Ips Ltd
Publication of TW200801227A publication Critical patent/TW200801227A/zh
Application granted granted Critical
Publication of TWI366608B publication Critical patent/TWI366608B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
TW096118178A 2006-06-29 2007-05-22 Method of depositing chalcogenide film for phase-change memory TWI366608B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060059097A KR100631400B1 (ko) 2006-06-29 2006-06-29 상변화 메모리용 칼코제나이드막 증착 방법

Publications (2)

Publication Number Publication Date
TW200801227A true TW200801227A (en) 2008-01-01
TWI366608B TWI366608B (en) 2012-06-21

Family

ID=37622854

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096118178A TWI366608B (en) 2006-06-29 2007-05-22 Method of depositing chalcogenide film for phase-change memory

Country Status (5)

Country Link
US (1) US7803656B2 (zh)
KR (1) KR100631400B1 (zh)
CN (1) CN101473417B (zh)
TW (1) TWI366608B (zh)
WO (1) WO2008002017A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI291745B (en) * 2005-11-30 2007-12-21 Ind Tech Res Inst Lateral phase change memory with spacer electrodes and method of manufacturing the same
US7906368B2 (en) * 2007-06-29 2011-03-15 International Business Machines Corporation Phase change memory with tapered heater
KR101394263B1 (ko) * 2008-02-19 2014-05-14 삼성전자주식회사 비휘발성 기억 소자 및 그 형성 방법
US8031518B2 (en) * 2009-06-08 2011-10-04 Micron Technology, Inc. Methods, structures, and devices for reducing operational energy in phase change memory
CN105070828B (zh) * 2015-07-21 2017-08-25 同济大学 一种纳米复合堆叠相变薄膜及其制备方法和应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5825046A (en) * 1996-10-28 1998-10-20 Energy Conversion Devices, Inc. Composite memory material comprising a mixture of phase-change memory material and dielectric material
US6709958B2 (en) * 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
JP4544447B2 (ja) * 2002-11-29 2010-09-15 パナソニック株式会社 プラズマドーピング方法
KR100673263B1 (ko) * 2003-03-04 2007-01-22 닛코킨조쿠 가부시키가이샤 스퍼터링 타겟트 및 그의 제조방법과 광 정보기록 매체용박막 및 그의 제조방법
US7622400B1 (en) * 2004-05-18 2009-11-24 Novellus Systems, Inc. Method for improving mechanical properties of low dielectric constant materials
CN100360711C (zh) * 2005-01-31 2008-01-09 山东大学 利用液相化学法制备硫族化合物热电薄膜的方法
CN100364132C (zh) * 2005-08-11 2008-01-23 上海交通大学 用于相变存储器的含硅系列硫族化物相变薄膜材料

Also Published As

Publication number Publication date
TWI366608B (en) 2012-06-21
US20090093083A1 (en) 2009-04-09
WO2008002017A1 (en) 2008-01-03
CN101473417A (zh) 2009-07-01
US7803656B2 (en) 2010-09-28
CN101473417B (zh) 2011-10-12
KR100631400B1 (ko) 2006-10-04

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees