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TW200712819A - Low-leakage current sources and active circuits - Google Patents

Low-leakage current sources and active circuits

Info

Publication number
TW200712819A
TW200712819A TW095122516A TW95122516A TW200712819A TW 200712819 A TW200712819 A TW 200712819A TW 095122516 A TW095122516 A TW 095122516A TW 95122516 A TW95122516 A TW 95122516A TW 200712819 A TW200712819 A TW 200712819A
Authority
TW
Taiwan
Prior art keywords
transistor
low
transistors
leakage current
leakage
Prior art date
Application number
TW095122516A
Other languages
English (en)
Other versions
TWI328729B (en
Inventor
Octavian Florescu
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of TW200712819A publication Critical patent/TW200712819A/zh
Application granted granted Critical
Publication of TWI328729B publication Critical patent/TWI328729B/zh

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/56—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
    • G05F1/575—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Control Of Electrical Variables (AREA)
TW095122516A 2005-06-22 2006-06-22 Integrated circuit, device and method for low-leakage current TWI328729B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/165,269 US7551021B2 (en) 2005-06-22 2005-06-22 Low-leakage current sources and active circuits

Publications (2)

Publication Number Publication Date
TW200712819A true TW200712819A (en) 2007-04-01
TWI328729B TWI328729B (en) 2010-08-11

Family

ID=37566602

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122516A TWI328729B (en) 2005-06-22 2006-06-22 Integrated circuit, device and method for low-leakage current

Country Status (9)

Country Link
US (1) US7551021B2 (zh)
EP (1) EP1907913B1 (zh)
JP (1) JP4824755B2 (zh)
KR (2) KR101329154B1 (zh)
CN (1) CN101233466B (zh)
ES (1) ES2575514T3 (zh)
HU (1) HUE027191T2 (zh)
TW (1) TWI328729B (zh)
WO (1) WO2007002418A2 (zh)

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US8207784B2 (en) * 2008-02-12 2012-06-26 Semi Solutions, Llc Method and apparatus for MOSFET drain-source leakage reduction
CN101888178B (zh) * 2010-06-13 2012-10-03 浙江大学 用于锁相环中极低电压工作下降低电流失配的电荷泵电路
JP5646938B2 (ja) * 2010-09-29 2014-12-24 旭化成エレクトロニクス株式会社 スイッチ回路
US8717076B1 (en) * 2012-01-30 2014-05-06 Texas Instruments Incorporated Edge rate control gate drive circuit and system for low side devices with capacitor
CN103675636B (zh) * 2012-09-20 2016-12-21 中芯国际集成电路制造(上海)有限公司 一种晶体管阈值电压的测试电路
CN102880840B (zh) * 2012-09-25 2015-05-20 宁波大学 一种用于防御攻击的电流型物理不可克隆函数电路
US9239586B2 (en) 2013-12-04 2016-01-19 Industrial Technology Research Institute Leakage-current start-up reference circuit
EP2899967A1 (en) * 2014-01-24 2015-07-29 Université Catholique De Louvain Image sensor
US10241535B2 (en) 2014-02-18 2019-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Flipped gate voltage reference having boxing region and method of using
CN105262467B (zh) * 2014-07-10 2018-05-04 恩智浦有限公司 体偏置的电路与方法
US9940992B2 (en) * 2016-03-30 2018-04-10 Qualcomm Incorporated Leakage-aware activation control of a delayed keeper circuit for a dynamic read operation in a memory bit cell
US9851740B2 (en) * 2016-04-08 2017-12-26 Qualcomm Incorporated Systems and methods to provide reference voltage or current
US9866234B1 (en) 2017-05-08 2018-01-09 Qualcomm Incorporated Digital-to-analog converter
US10782347B2 (en) 2017-10-23 2020-09-22 Nxp B.V. Method for identifying a fault at a device output and system therefor
US10436839B2 (en) * 2017-10-23 2019-10-08 Nxp B.V. Method for identifying a fault at a device output and system therefor
CN112580276A (zh) * 2019-09-25 2021-03-30 天津大学 一种使用基于知识的神经网络的从mos管到vco电路性能的hci退化模型
KR102816303B1 (ko) 2020-04-28 2025-06-02 삼성전자주식회사 노이즈 필터링 회로 및 이를 포함하는 전자 회로
CN112230702B (zh) * 2020-11-03 2025-05-27 成都明夷电子科技股份有限公司 一种SiGe工艺信号放大器尾电流偏置电路
CN117077747B (zh) * 2023-09-06 2025-07-25 浙江大学杭州国际科创中心 一种Sigmoid激活函数的存算一体电路

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Also Published As

Publication number Publication date
KR20080018274A (ko) 2008-02-27
KR101329154B1 (ko) 2013-11-14
ES2575514T3 (es) 2016-06-29
TWI328729B (en) 2010-08-11
JP2008544707A (ja) 2008-12-04
KR20100101711A (ko) 2010-09-17
EP1907913A2 (en) 2008-04-09
CN101233466A (zh) 2008-07-30
CN101233466B (zh) 2012-05-30
WO2007002418A2 (en) 2007-01-04
KR101062109B1 (ko) 2011-09-02
WO2007002418A3 (en) 2007-12-21
JP4824755B2 (ja) 2011-11-30
US20060290416A1 (en) 2006-12-28
HUE027191T2 (en) 2016-10-28
EP1907913B1 (en) 2016-03-09
US7551021B2 (en) 2009-06-23

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