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TW200711006A - Semiconductor device manufacturing apparatus, semiconductor device manufacturing method and semiconductor device - Google Patents

Semiconductor device manufacturing apparatus, semiconductor device manufacturing method and semiconductor device

Info

Publication number
TW200711006A
TW200711006A TW095111955A TW95111955A TW200711006A TW 200711006 A TW200711006 A TW 200711006A TW 095111955 A TW095111955 A TW 095111955A TW 95111955 A TW95111955 A TW 95111955A TW 200711006 A TW200711006 A TW 200711006A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
device manufacturing
manufacturing apparatus
information
drawing pattern
Prior art date
Application number
TW095111955A
Other languages
English (en)
Other versions
TWI303088B (en
Inventor
Kazuhiro Shimizu
Hajime Akiyama
Naoki Yasuda
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200711006A publication Critical patent/TW200711006A/zh
Application granted granted Critical
Publication of TWI303088B publication Critical patent/TWI303088B/zh

Links

Classifications

    • H10P74/00—
    • H10P72/0611—
    • H10P72/0614—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Manufacturing Of Printed Wiring (AREA)
TW095111955A 2005-08-26 2006-04-04 Semiconductor device manufacturing apparatus, semiconductor device manufacturing method and semiconductor device TWI303088B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005245832A JP4914589B2 (ja) 2005-08-26 2005-08-26 半導体製造装置、半導体製造方法および半導体装置

Publications (2)

Publication Number Publication Date
TW200711006A true TW200711006A (en) 2007-03-16
TWI303088B TWI303088B (en) 2008-11-11

Family

ID=37715688

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111955A TWI303088B (en) 2005-08-26 2006-04-04 Semiconductor device manufacturing apparatus, semiconductor device manufacturing method and semiconductor device

Country Status (6)

Country Link
US (4) US7481885B2 (zh)
JP (1) JP4914589B2 (zh)
KR (1) KR100778353B1 (zh)
CN (2) CN1921071B (zh)
DE (3) DE102006062990B3 (zh)
TW (1) TWI303088B (zh)

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CN104977518B (zh) * 2014-04-09 2018-05-01 中芯国际集成电路制造(上海)有限公司 一种晶圆出货检验方法
JP6623033B2 (ja) * 2015-10-30 2019-12-18 日信工業株式会社 炭素繊維複合材料及び炭素繊維複合材料の製造方法
US9786568B2 (en) 2016-02-19 2017-10-10 Infineon Technologies Ag Method of manufacturing an integrated circuit substrate
DE102017103310A1 (de) * 2016-02-19 2017-08-24 Infineon Technologies Ag Substrat einer elektronischen vorrichtung und verfahren zum herstellen desselben
US10269635B2 (en) 2016-02-19 2019-04-23 Infineon Technologies Ag Integrated circuit substrate and method for manufacturing the same
CN107799432B (zh) * 2016-09-06 2020-05-05 中芯国际集成电路制造(上海)有限公司 管芯分拣装置
US10580753B2 (en) 2017-07-21 2020-03-03 Infineon Technologies Ag Method for manufacturing semiconductor devices
CN110376504B (zh) * 2019-06-27 2022-06-17 瑞芯微电子股份有限公司 一种关于ic高压损伤模拟系统及方法
CN111632794B (zh) * 2020-05-12 2021-02-19 杭州沃镭智能科技股份有限公司 一种igbt模块导热硅脂涂覆装置及其使用方法
TWI786459B (zh) * 2020-11-03 2022-12-11 研能科技股份有限公司 晶圓結構
JP7711489B2 (ja) * 2021-08-25 2025-07-23 富士電機株式会社 炭化珪素半導体装置、炭化珪素半導体装置の製造方法および半導体回路装置
CN114203592B (zh) * 2021-11-29 2025-05-27 北京芯可鉴科技有限公司 芯片局部涂覆装置
CN115295476B (zh) * 2022-10-08 2023-01-10 四川洪芯微科技有限公司 一种芯片脱膜装置

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Also Published As

Publication number Publication date
CN101826508A (zh) 2010-09-08
KR20070024349A (ko) 2007-03-02
DE102006032730B4 (de) 2017-06-29
CN1921071B (zh) 2010-05-12
US7977787B2 (en) 2011-07-12
US7481885B2 (en) 2009-01-27
JP2007059785A (ja) 2007-03-08
TWI303088B (en) 2008-11-11
JP4914589B2 (ja) 2012-04-11
CN1921071A (zh) 2007-02-28
DE102006032730A1 (de) 2007-03-01
DE102006062990B3 (de) 2018-10-11
US20070072394A1 (en) 2007-03-29
US20110254049A1 (en) 2011-10-20
US8609443B2 (en) 2013-12-17
US8324657B2 (en) 2012-12-04
KR100778353B1 (ko) 2007-11-22
DE102006062913B4 (de) 2017-04-06
US20130056791A1 (en) 2013-03-07
US20090096091A1 (en) 2009-04-16

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MM4A Annulment or lapse of patent due to non-payment of fees