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TW200701401A - Semiconductor devices and methods of manufacture thereof - Google Patents

Semiconductor devices and methods of manufacture thereof

Info

Publication number
TW200701401A
TW200701401A TW094144434A TW94144434A TW200701401A TW 200701401 A TW200701401 A TW 200701401A TW 094144434 A TW094144434 A TW 094144434A TW 94144434 A TW94144434 A TW 94144434A TW 200701401 A TW200701401 A TW 200701401A
Authority
TW
Taiwan
Prior art keywords
etch stop
thickness
methods
semiconductor devices
stop layer
Prior art date
Application number
TW094144434A
Other languages
English (en)
Other versions
TWI302019B (en
Inventor
Mong-Song Liang
Hun-Jan Tao
Jim Huang
Ling-Yen Yeh
Yu-Lien Huang
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW200701401A publication Critical patent/TW200701401A/zh
Application granted granted Critical
Publication of TWI302019B publication Critical patent/TWI302019B/zh

Links

Classifications

    • H10P14/6903—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
TW094144434A 2005-06-23 2005-12-15 Semiconductor devices and methods of manufacture thereof TWI302019B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/159,709 US20070013070A1 (en) 2005-06-23 2005-06-23 Semiconductor devices and methods of manufacture thereof

Publications (2)

Publication Number Publication Date
TW200701401A true TW200701401A (en) 2007-01-01
TWI302019B TWI302019B (en) 2008-10-11

Family

ID=37660947

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094144434A TWI302019B (en) 2005-06-23 2005-12-15 Semiconductor devices and methods of manufacture thereof

Country Status (2)

Country Link
US (1) US20070013070A1 (zh)
TW (1) TWI302019B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI627661B (zh) * 2014-09-09 2018-06-21 Tokyo Electron Limited 使次解析度等級之臨界尺寸不同的圖案化方法

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* Cited by examiner, † Cited by third party
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US7790540B2 (en) * 2006-08-25 2010-09-07 International Business Machines Corporation Structure and method to use low k stress liner to reduce parasitic capacitance
US20080116578A1 (en) * 2006-11-21 2008-05-22 Kuan-Chen Wang Initiation layer for reducing stress transition due to curing
US7977181B2 (en) * 2008-10-06 2011-07-12 Taiwan Semiconductor Manufacturing Company, Ltd. Method for gate height control in a gate last process
KR102462134B1 (ko) 2015-05-19 2022-11-02 삼성전자주식회사 배선 구조물, 배선 구조물 형성 방법, 반도체 장치 및 반도체 장치의 제조 방법
JP2017168411A (ja) * 2016-03-18 2017-09-21 株式会社ジャパンディスプレイ 表示装置の製造方法
US10475648B1 (en) * 2018-05-01 2019-11-12 United Microelectronics Corp. Method for patterning a semiconductor structure
KR102815080B1 (ko) * 2019-08-07 2025-05-30 삼성전자주식회사 수직형 반도체 소자

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DE2021923B2 (de) * 1970-05-05 1976-07-22 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen eines feldeffekttransistors mit isolierter gateelektrode
JP2682403B2 (ja) * 1993-10-29 1997-11-26 日本電気株式会社 半導体装置の製造方法
JP2663900B2 (ja) * 1995-02-28 1997-10-15 日本電気株式会社 半導体装置の製造方法
US5776834A (en) * 1995-06-07 1998-07-07 Advanced Micro Devices, Inc. Bias plasma deposition for selective low dielectric insulation
KR100186503B1 (ko) * 1996-06-10 1999-04-15 문정환 반도체 소자의 제조 방법
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JP3449998B2 (ja) * 2000-10-05 2003-09-22 沖電気工業株式会社 半導体装置におけるコンタクトホールの形成方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI627661B (zh) * 2014-09-09 2018-06-21 Tokyo Electron Limited 使次解析度等級之臨界尺寸不同的圖案化方法

Also Published As

Publication number Publication date
US20070013070A1 (en) 2007-01-18
TWI302019B (en) 2008-10-11

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