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TW200622187A - Surface inspection apparatus, surface inspection method and exposure system - Google Patents

Surface inspection apparatus, surface inspection method and exposure system

Info

Publication number
TW200622187A
TW200622187A TW094138507A TW94138507A TW200622187A TW 200622187 A TW200622187 A TW 200622187A TW 094138507 A TW094138507 A TW 094138507A TW 94138507 A TW94138507 A TW 94138507A TW 200622187 A TW200622187 A TW 200622187A
Authority
TW
Taiwan
Prior art keywords
pattern
surface inspection
substrate
image
forming
Prior art date
Application number
TW094138507A
Other languages
English (en)
Other versions
TWI391625B (zh
Inventor
Takeo Oomori
Kazuhiko Fukazawa
Yuwa Ishii
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200622187A publication Critical patent/TW200622187A/zh
Application granted granted Critical
Publication of TWI391625B publication Critical patent/TWI391625B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N2021/9513—Liquid crystal panels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW094138507A 2004-11-09 2005-11-03 表面檢視設備、表面檢視方法和曝光系統 TWI391625B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004324687A JP4802481B2 (ja) 2004-11-09 2004-11-09 表面検査装置および表面検査方法および露光システム

Publications (2)

Publication Number Publication Date
TW200622187A true TW200622187A (en) 2006-07-01
TWI391625B TWI391625B (zh) 2013-04-01

Family

ID=36315952

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094138507A TWI391625B (zh) 2004-11-09 2005-11-03 表面檢視設備、表面檢視方法和曝光系統

Country Status (4)

Country Link
US (1) US7369224B2 (zh)
JP (1) JP4802481B2 (zh)
KR (1) KR101261047B1 (zh)
TW (1) TWI391625B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI499772B (zh) * 2008-11-10 2015-09-11 尼康股份有限公司 Evaluation device and evaluation method
CN113125466A (zh) * 2020-01-14 2021-07-16 丰田自动车株式会社 缸孔内表面的检查方法以及检查装置

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4580797B2 (ja) * 2005-03-28 2010-11-17 株式会社東芝 偏光状態検査方法及び半導体装置の製造方法
JP4548385B2 (ja) * 2006-05-10 2010-09-22 株式会社ニコン 表面検査装置
JP4605089B2 (ja) * 2006-05-10 2011-01-05 株式会社ニコン 表面検査装置
JP4595881B2 (ja) * 2006-05-15 2010-12-08 株式会社ニコン 表面検査装置
JP4692892B2 (ja) * 2006-06-01 2011-06-01 株式会社ニコン 表面検査装置
CN101473219B (zh) * 2006-07-14 2012-02-29 株式会社尼康 表面检查设备
US7990546B2 (en) * 2007-07-16 2011-08-02 Applied Materials Israel, Ltd. High throughput across-wafer-variation mapping
JP2009031212A (ja) * 2007-07-30 2009-02-12 Nikon Corp 表面検査装置および表面検査方法
JP5534406B2 (ja) * 2007-09-26 2014-07-02 株式会社ニコン 表面検査方法および表面検査装置
KR101237583B1 (ko) * 2007-10-23 2013-02-26 시바우라 메카트로닉스 가부시키가이샤 촬영 화상에 기초한 검사 방법 및 검사 장치
JP2009192520A (ja) * 2007-11-15 2009-08-27 Nikon Corp 表面検査装置
JP5212779B2 (ja) * 2007-12-18 2013-06-19 株式会社ニコン 表面検査装置および表面検査方法
JP5440782B2 (ja) * 2008-01-18 2014-03-12 株式会社ニコン 表面検査装置および表面検査方法
JP5117250B2 (ja) * 2008-03-31 2013-01-16 大日本スクリーン製造株式会社 露光装置
WO2010013232A1 (en) * 2008-07-29 2010-02-04 Applied Materials Israel Ltd. Mapping variations of a surface
CN102171618B (zh) * 2008-10-06 2014-03-19 Asml荷兰有限公司 使用二维目标的光刻聚焦和剂量测量
JP2010096596A (ja) * 2008-10-15 2010-04-30 Nikon Corp 評価装置
KR20100053076A (ko) * 2008-11-12 2010-05-20 삼성전자주식회사 데이터베이스화된 표준 광학적 임계치수를 이용한 불량 웨이퍼 감지방법 및 그를 이용한 반도체 생산 시스템
JP5354362B2 (ja) * 2009-06-09 2013-11-27 株式会社ニコン 表面検査装置
JP5434353B2 (ja) * 2009-08-06 2014-03-05 株式会社ニコン 表面検査装置および表面検査方法
JP5434352B2 (ja) * 2009-08-06 2014-03-05 株式会社ニコン 表面検査装置および表面検査方法
NL2006229A (en) * 2010-03-18 2011-09-20 Asml Netherlands Bv Inspection method and apparatus, and associated computer readable product.
KR101793584B1 (ko) 2010-04-30 2017-11-03 가부시키가이샤 니콘 검사 장치 및 검사 방법
KR101830679B1 (ko) * 2010-07-29 2018-02-22 삼성디스플레이 주식회사 표시 패널 검사 장치 및 그 방법
WO2012056601A1 (ja) * 2010-10-26 2012-05-03 株式会社ニコン 検査装置、検査方法、露光方法、および半導体デバイスの製造方法
WO2012081587A1 (ja) * 2010-12-14 2012-06-21 株式会社ニコン 検査方法、検査装置、露光管理方法、露光システムおよび半導体デバイス
US20120320374A1 (en) * 2011-06-17 2012-12-20 Sites Peter W Method of imaging and inspecting the edge of an ophthalmic lens
CN103918059A (zh) * 2011-11-29 2014-07-09 株式会社尼康 测定装置、测定方法、及半导体元件制造方法
JP5648937B2 (ja) * 2013-06-06 2015-01-07 株式会社ニコン 評価装置
US9558545B2 (en) * 2014-12-03 2017-01-31 Kla-Tencor Corporation Predicting and controlling critical dimension issues and pattern defectivity in wafers using interferometry
KR101865338B1 (ko) * 2016-09-08 2018-06-08 에스엔유 프리시젼 주식회사 선폭 측정장치 및 이를 이용한 선폭 측정방법
US11105619B2 (en) 2017-07-14 2021-08-31 Asml Netherlands B.V. Measurement apparatus
US11087451B2 (en) * 2017-12-19 2021-08-10 Texas Instruments Incorporated Generating multi-focal defect maps using optical tools
JP2019179342A (ja) * 2018-03-30 2019-10-17 日本電産サンキョー株式会社 画像処理装置および画像処理方法
NL2024850A (en) 2019-02-21 2020-08-31 Asml Holding Nv Wafer alignment using form birefringence of targets or product
CN111239498B (zh) * 2020-03-18 2022-05-31 山东国瓷功能材料股份有限公司 材料介电性能的测试装置和测试方法
CN111487470B (zh) * 2020-03-18 2022-05-31 山东国瓷功能材料股份有限公司 材料介电性能的测试装置和方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3150203B2 (ja) * 1992-07-13 2001-03-26 株式会社日立製作所 パターン検出方法とその装置
JP3630852B2 (ja) 1995-05-16 2005-03-23 キヤノン株式会社 パターン形成状態検出装置及びそれを用いた投影露光装置
US5777744A (en) 1995-05-16 1998-07-07 Canon Kabushiki Kaisha Exposure state detecting system and exposure apparatus using the same
US6594012B2 (en) * 1996-07-05 2003-07-15 Canon Kabushiki Kaisha Exposure apparatus
JP3927629B2 (ja) 1996-10-04 2007-06-13 キヤノン株式会社 基板処理工程モニター装置、及びこれを用いたデバイス製造方法
JP3610837B2 (ja) * 1998-09-18 2005-01-19 株式会社日立製作所 試料表面の観察方法及びその装置並びに欠陥検査方法及びその装置
US6020966A (en) * 1998-09-23 2000-02-01 International Business Machines Corporation Enhanced optical detection of minimum features using depolarization
US6646735B2 (en) * 2000-09-13 2003-11-11 Nikon Corporation Surface inspection apparatus and surface inspection method
JP4591802B2 (ja) * 2000-09-13 2010-12-01 株式会社ニコン 表面検査装置および方法
JP4153652B2 (ja) * 2000-10-05 2008-09-24 株式会社東芝 パターン評価装置及びパターン評価方法
JP2003130808A (ja) * 2001-10-29 2003-05-08 Hitachi Ltd 欠陥検査方法及びその装置
JP4094327B2 (ja) 2002-04-10 2008-06-04 株式会社日立ハイテクノロジーズ パターン計測方法及びパターン計測装置、並びにパターン工程制御方法
KR101346492B1 (ko) * 2003-10-27 2013-12-31 가부시키가이샤 니콘 패턴 검사장치 및 패턴 검사방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI499772B (zh) * 2008-11-10 2015-09-11 尼康股份有限公司 Evaluation device and evaluation method
CN113125466A (zh) * 2020-01-14 2021-07-16 丰田自动车株式会社 缸孔内表面的检查方法以及检查装置

Also Published As

Publication number Publication date
KR20060052568A (ko) 2006-05-19
JP2006135211A (ja) 2006-05-25
US7369224B2 (en) 2008-05-06
KR101261047B1 (ko) 2013-05-06
TWI391625B (zh) 2013-04-01
US20060098189A1 (en) 2006-05-11
JP4802481B2 (ja) 2011-10-26

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