Classifications

• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
  • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
• • H10P30/204—
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
  • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
  • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
• • H—ELECTRICITY
  • H04—ELECTRIC COMMUNICATION TECHNIQUE
  • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
  • H04N7/00—Television systems
  • H04N7/18—Closed-circuit television [CCTV] systems, i.e. systems in which the video signal is not broadcast
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/01—Manufacture or treatment
  • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
  • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
  • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
  • H10D62/213—Channel regions of field-effect devices
  • H10D62/221—Channel regions of field-effect devices of FETs
  • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
• • H10P30/212—
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/30—Electron or ion beam tubes for processing objects
  • H01J2237/304—Controlling tubes
  • H01J2237/30405—Details
  • H01J2237/30411—Details using digital signal processors [DSP]

Landscapes

• Engineering & Computer Science (AREA)
• Multimedia (AREA)
• Signal Processing (AREA)
• Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• Physical Vapour Deposition (AREA)
• Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
• Insulated Gate Type Field-Effect Transistor (AREA)

Applications Claiming Priority (1)

Publications (2)

Family

ID=35187623

Family Applications (1)

Country Status (5)

Families Citing this family (4)

Family Cites Families (4)

• 2004
  • 2004-04-23 JP JP2004128057A patent/JP2005310634A/ja active Pending
• 2005
  • 2005-04-11 TW TW094111407A patent/TWI281692B/zh not_active IP Right Cessation
  • 2005-04-21 KR KR1020050033017A patent/KR100659645B1/ko not_active Expired - Fee Related
  • 2005-04-21 US US11/110,814 patent/US20050244989A1/en not_active Abandoned
  • 2005-04-22 CN CNB2005100663496A patent/CN100405526C/zh not_active Expired - Fee Related

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