TW200532812A - Semiconductor molding structure and method thereof - Google Patents
Semiconductor molding structure and method thereof Download PDFInfo
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- TW200532812A TW200532812A TW93107387A TW93107387A TW200532812A TW 200532812 A TW200532812 A TW 200532812A TW 93107387 A TW93107387 A TW 93107387A TW 93107387 A TW93107387 A TW 93107387A TW 200532812 A TW200532812 A TW 200532812A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000000465 moulding Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000004806 packaging method and process Methods 0.000 claims description 63
- 235000012431 wafers Nutrition 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 21
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000012360 testing method Methods 0.000 claims description 6
- 239000000084 colloidal system Substances 0.000 claims description 4
- 238000007723 die pressing method Methods 0.000 claims 1
- 239000008393 encapsulating agent Substances 0.000 abstract description 7
- 238000005538 encapsulation Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000005484 gravity Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
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- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
200532812 丨五、發明說明α) i【發明所屬之技術領域】 I 本發明係關於一種半導體模壓製法及其模壓結構,尤 |指一種可減少半導體裝置發生輕曲與變形之半導體模壓製 法及其模壓結構。 【先前技術】 球柵陣列半導體封裝技術是一種先進的半導體封裝技 術,其係如第5圖所示,以基板5 1作為半導體晶片5 2之承 載座,並於其上表面與下表面皆敷設導電跡線層5 4,而令 該晶片5 2以銲線5 3電性連接該上表面之導電跡線層5 4,以 藉其下表面所植入之銲球5 6而將電訊訊號傳送至外界,並 藉一形成於其上表面且包覆該晶片5 2與銲線5 3的封裝膠體 5 5保護該封裝件。 此一球栅陣列封裝件5 0為顧及製法上之成本考量與量 I產需要,一般係以批次方式(B a t c h T y p e)製作,亦即在 I 一整片基板條片(S u b s t r a t e S t r i p )上以多條格柵交錯的 i封裝分界線預先定義出複數個矩陣排列的封裝單元,經過 上片(D i e Bond)、銲接(W i r e Bond)及膠體封裝等步 驟後,再施予切單(S i n g u 1 a t i〇n)去除相鄰封裝單元間_ 的連結,以製成第5圖所示之單一半導體封裝件5 0。 習知上為提升製程效率,並降低膠體封裝之時間與成 本,常如美國專利第5,7 7 6,7 9 8號案所揭示之薄型球栅陣 列(Thin Fine Ball Grid Array, TFBGA)半導體封裝件 之模壓方法,如第6圖所示,先於基板1 0 0上形成複數個陣 列式之預定封裝區域(如元件符號1 0 1、1 0 2、1 0 3、1 0 4、200532812 丨 V. Description of the invention α) i [Technical field to which the invention belongs] I The present invention relates to a semiconductor molding method and a molding structure thereof, in particular, it refers to a semiconductor molding method and a molding method capable of reducing lightness and deformation of a semiconductor device. structure. [Previous technology] Ball grid array semiconductor packaging technology is an advanced semiconductor packaging technology. As shown in Figure 5, the substrate 5 1 is used as the carrier of the semiconductor wafer 5 2 and is laid on both the upper and lower surfaces. The conductive trace layer 54 is used to electrically connect the chip 5 2 to the conductive trace layer 54 on the upper surface with a bonding wire 5 3 so as to transmit the electrical signal by the solder ball 5 6 implanted on the lower surface thereof. To the outside, and protect the package by an encapsulant 5 5 formed on the upper surface thereof and covering the chip 5 2 and the bonding wire 5 3. This ball grid array package 50 takes into account the cost considerations and production requirements of the manufacturing method, and is generally produced in batch mode (Batch T ype), that is, a whole substrate strip (S ubstrate S On the trip), a plurality of grid-interleaved i-package boundary lines are used to predefine a plurality of packaging units arranged in a matrix, and after applying steps such as die bonding, welding bond, and colloidal packaging, they are applied. Singulation (S ingu 1 ATI) removes the connection between adjacent packaging units to form a single semiconductor package 50 as shown in FIG. 5. Conventionally, in order to improve the process efficiency and reduce the time and cost of colloidal packaging, such as the thin ball grid array (Thin Fine Ball Grid Array, TFBGA) semiconductor disclosed in US Patent No. 5,7 7 6, 7 98 As shown in FIG. 6, a method for molding a package is to form a plurality of array-type predetermined packaging areas on the substrate 100 (such as component symbols 1 0 1, 1 0 2, 1 0 3, 1 0 4,
B11ISB11IS
17437聯測.ptd 第5頁 200532812 丨五、發明說明(2) j | 1 0 5、1 0 6專)’各該封裝區域係以環繞周圍之間隙;[q 7彼此 | S | i隔開。其中,該基板1 0 0係以基板條片之方式進行封裝製 |程,而該基板1 〇 〇周圍則形成有攔壩結構1 〇 8 ( D a m b a r ), 以令該等預定封裝區域位於該攔壩結構1 〇 8之内。然後, 以諸如樹脂(Ε ρ ο X y )之封裝膠體1 0 9覆蓋該攔壩結構1 §内 之陣列式封裝區域,經模壓作業後封裝位於基板1 〇 〇上之 多個封裝區域。其中,由於該攔壩結構1 〇 8環繞整個封裝 區域周圍,而可令覆蓋其中之封裝膠體1 〇 9形成平坦表 、。最後’經硬化製程(Post molding curing,PMC)以 使樹脂鍵結完成後,在所得封裝件的封裝區域之間隙丨〇 7 處切割封裝膠體1 〇 9及其下方之基板1 〇 〇,以分割每一封裝 區域,而得到如第5圖所示之個別半導體封裝件。 然而,此種習知方法之預定封裝區域係採陣列式排 列,經封裝於整個封裝區域後之封裝膠體1 〇 9面積極大, 一般為42.5 mm X 42.5 mm’易於高溫處理之pmc製程後, 因封裝膠體1 〇 9與基板1 0 0之熱膨脹係數不匹配(c 丁 e Mismatch)而產生不同之熱膨脹量,加以該薄型球柵陣列 基板1 0 0之厚度較薄,且該封裝膠體i 〇 9與基板i 〇 〇間之接· 觸馨5積又極大,導致該封裝件產生如第7圖所示之輕曲 -(War page)現象,形成製程良率與結構強度上的一大問 題,進而亦將因其平面度不佳而造成切割不易或損及切割 刀具之缺點。 因此’復有如美國專利第5,8 9 7,3 3 4號案所揭示,其 係於第8圖所示之基板條片6 1上建構複數個由封裝線6 317437 联 测 .ptd Page 5 200532812 丨 V. Description of the invention (2) j | 1 0 5, 1 6 6) 'Each of this packaging area is surrounded by a surrounding gap; [q 7 each other | S | i separated . Wherein, the substrate 100 is packaged in the form of a substrate strip, and a dam structure 108 (D ambar) is formed around the substrate 100 so that the predetermined packaging areas are located in the substrate 100. Dam structure within 108. Then, an array-type packaging area within the dam structure 1 § is covered with a packaging gel 10 9 such as resin (E ρ ο X y), and a plurality of packaging areas on the substrate 100 are packaged after the molding operation. Among them, because the dam structure 108 surrounds the entire encapsulation area, the encapsulation gel 107 covering it can form a flat surface. Finally, after post molding curing (PMC) to complete the resin bonding, the packaging gel 1 009 and the substrate 1 〇 below are cut at the gap of the packaging area of the obtained package to be divided. For each package area, an individual semiconductor package as shown in FIG. 5 is obtained. However, the predetermined packaging area of this conventional method is arranged in an array. After packaging the entire packaging area, the packaging gel 10 has a large area, generally 42.5 mm X 42.5 mm. After the PMC process, which is easy to handle at high temperature, The thermal expansion coefficient of the package gel 1 〇9 does not match the thermal expansion coefficient of the substrate 100 (c but e Mismatch), and the thickness of the thin ball grid array substrate 100 is thinner, and the package gel i 〇9 The contact with the substrate i 〇 5 is extremely large, causing the package to produce the Warpage phenomenon as shown in Figure 7, which causes a major problem in process yield and structural strength. Furthermore, due to its poor flatness, it is difficult to cut or damage the cutting tool. Therefore, as shown in U.S. Patent No. 5,8,9,7,3,4, a plurality of packaging lines 6 3 are constructed on the substrate strip 6 1 shown in FIG. 8.
200532812 丨五、發明說明(3) i( Package Line)劃分出來且相鄰的四方形基板單元62、200532812 丨 V. Description of the invention (3) i (Package Line) divided and adjacent square substrate units 62,
17437 聯測.ptd 第7頁 200532812 i五、發明說明(4) &匕一領域所迫切待解之課題。 i【發明内容】 ! 本發明之主要目的即在提供一種可防止因熱膨脹係數17437 Joint Test. Ptd Page 7 200532812 i. Description of the Invention (4) The urgent problem in the field of & i [Contents of the Invention] The main object of the present invention is to provide a method for preventing thermal expansion coefficient.
17437聯測.ptd 第8頁 200532812 丨五、發明說明(5) I狀,而其高度則係低於該封裝單元之高度;同時,每一組 I相鄰之二封裝單元間係均形成有該連接部,而各組間之封 i裝單元間隔處則未形成有該連接部,或者,亦可變更設計 I為,所有相鄰之封裝單元間均形成有該連接部。 ! 因此,藉由前述之連接部設計,即可令該晶片承載件 I上的封裝單元間均維持著一適當的拘束力,而可令本發明 I所提出之半導體模壓製法及其.模壓結構發揮穩固整體結構 I之功效,既不致因材料熱膨脹係數不匹配而出現翹曲破 I壞,亦不致因重力效應而導致結構彎曲變形,充分提升了 結構強度與製程良率,解決了習知技術所遭逢之兩難問 題。 【實施方式】 以下係藉由特定的具體實施例說明本發明之實施方 ! i式,熟習此技藝之人士可由本說明書所揭示之内容輕易地 i瞭解本發明之其他優點與功效。本發明亦可藉由其他不同 的具體實施例加以施行或應用,本說明書中的各項細節亦 可基於不同觀點與應用,在不悖離本發明之精神下進行各 種修飾與變更。 _ 第1 A、1 B圖係顯示本發明之半導體模壓製法與其模壓 結構的較佳實施例,首先,如第1 A圖所示,提供一晶片承 載件2 0,該晶片承載件2 0可為例如薄型球柵陣列基板,且17437 联 测 .ptd Page 8 200532812 丨 V. Description of the invention (5) I shape, and its height is lower than the height of the packaging unit; At the same time, each group of I adjacent two packaging units are formed The connection portion is not formed at the packaging unit space between the groups, or the design I may be changed so that the connection portion is formed between all adjacent packaging units. Therefore, by the aforementioned connection portion design, an appropriate binding force can be maintained between the packaging units on the wafer carrier I, and the semiconductor molding method and the molding structure proposed by the present invention I can be made. Give play to the effect of stabilizing the overall structure I, which will not cause warpage and breakage due to the mismatch of the thermal expansion coefficient of the material, nor will it cause the structure to bend and deform due to the effect of gravity, which fully improves the structural strength and process yield, and solves the conventional technology The dilemma encountered. [Embodiment] The following is a description of the embodiment of the present invention by means of a specific embodiment! The person skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention may also be implemented or applied by other different specific embodiments, and various details in this specification may also be based on different viewpoints and applications, and various modifications and changes may be made without departing from the spirit of the present invention. _ Figures 1A and 1B show preferred embodiments of the semiconductor molding method and the molding structure of the present invention. First, as shown in Figure 1A, a wafer carrier 20 is provided. The wafer carrier 20 can Is, for example, a thin ball grid array substrate, and
I 其表面上係形成有多條格柵狀交錯之預定裁切線,以由該 等預定裁切線定義複數個呈矩陣排列之半導體晶片2 1之承 載區域及最終切割道,其中該半導體晶片2 1係以銲線2 2與I A plurality of grid-shaped staggered predetermined cutting lines are formed on the surface thereof, and a plurality of semiconductor wafers 2 1 arranged in a matrix are defined by the predetermined cutting lines and a final cutting line, wherein the semiconductor wafer 2 1 With welding wire 2 2 and
17437 聯測.ptd 第9頁 200532812 五、發明說明(6) ^---- 訌晶片▲承載件20上之導電跡線電性連接;接著,進行本發 明之杈壓製程,其係如圖所示以一特製之上、下模豆2 3、 丨Γΐίίί ^承載件2°’以令每一晶片21與其銲線;2容設 =士 f具23之對應模穴25中,同時,相鄰兩模穴25係配 f ,以令同—組的兩模穴25間形成兩高度較模穴25 為低之連接通運3 0,俾使封裝膠體2 6自注膠口(未圖示)注 丨入該模穴25後,該封裝膠體26亦可填充於相鄰兩模穴“間 的兩連接通道30中。 接著,當所 裝^體2 6後,即 半導體裝置40, 一組, 所組成 上模具 相鄰兩 晶片承 淳該連 3 0設計 3·以 ί皁使該 遇大, f句束力 力而壓 因 且同一組 之連接部 2 3之連接 晶片21之 載件2 0上 接部3 1之 ’而成兩 連接相鄰 晶片承載 同時亦可 ,使該晶 迫呑玄晶片 此,藉由 有模穴2 5與連接通道3 0中均已填充滿該封 進行脫模步驟,而可如第1 jg圖般,製得一 此時即可見得兩相鄰封裝單元41係配置成 的兩封裝單元4 1間係以兩個由封裝膠體2 6 3 1相互連接,該連接部3 1即為對應於前述 通道3 0位置的封裝膠體2 6,以令用以包覆 封裝膠體2 6藉該連接部3 1而一體成形於該 ,再如第2圖之上視圖所示,可更清楚見 設計形狀,其係藉由該模穴2 5之連接通道 長條狀且相互間隔一距離的膠體連接部 _ 兩封裝單元4 1之封裝膠體2 6的中央位置, 件2 0與所有封裝膠·體2 6間之接觸面積不致 藉該連接部3 1提开相鄰兩封裝單元4 1間之 片承栽件2 〇兩端之封裝單元4 1不致因其重 承載件2 0彎曲變形。 如述揭示於該上模具2 3中之連接通道3 (h又17437 联 测 .ptd Page 9 200532812 V. Description of the invention (6) ^ ---- 讧 Wafer ▲ The conductive traces on the carrier 20 are electrically connected; then, the pressing process of the present invention is performed, which is shown in the figure Shown is a special upper and lower mold bean 2 3, 丨 Γΐίί ^ ^ bearing 2 ° 'so that each wafer 21 and its bonding wire; 2 containing = the corresponding cavity 25 of the tool 23 The two adjacent mold cavities 25 are equipped with f, so that the two mold cavities 25 in the same group form a connection with a height lower than that of the mold cavity 25 to connect 3 0, so that the encapsulation gel 2 6 self-injection port (not shown) Note: After inserting the cavity 25, the encapsulating gel 26 can also be filled in the two connection channels 30 between two adjacent cavities. Then, when the body 26 is installed, the semiconductor device 40, a group, Adjacent two wafers on the upper mold are composed of Cheng Chun, Lien 3 0 Design 3. The soap is made larger by the force of f, and the force is pressed by force, and the same connection portion 2 3 is connected to the carrier 21 of the wafer 21 The connection portion 31 can be connected to adjacent wafers at the same time, so that the wafer can be forced into the wafer, and the cavity 2 5 and the connection channel 3 0 are filled in. Fill the seal and perform the demolding step, as shown in Figure 1 jg. At this time, you can see that two adjacent packaging units 41 are configured as two packaging units 4 1 and 2 are made of packaging gel 2 6 3 1 are connected to each other, and the connecting portion 31 is the encapsulating gel 2 6 corresponding to the position of the aforementioned channel 30, so that the encapsulating gel 2 6 is integrally formed by the connecting portion 31, as shown in FIG. As shown in the upper view of Fig. 2, the design shape can be seen more clearly. It is a colloidal connecting part that is long and spaced apart from each other by the connecting channel of the cavity 25. The encapsulating colloid 2 of the two packaging units 41. In the central position, the contact area between the component 20 and all the encapsulants 2 and 6 cannot be used to open the two adjacent packaging units 41 by the connecting portion 31, and the packaging units 2 at both ends of the packaging unit 41. Do not cause bending deformation due to its heavy load bearing member 20. As described above, the connecting channel 3 (h and
17437聯測.Ptd 第10頁 200532812 五、發明說明(7) 計,即可令模壓完成之相鄰兩封裝單元4 1間形成兩長條連 接部3 1,此時由於該長條連接部3 1與該晶片承載件2 0之接 觸面積並不大,故而將不致令該封裝膠體2 6於熱膨脹時產 I生過大之束缚,而可藉該連接部31之兩側釋放其熱膨脹應 力,亦不致因該封裝膠體2 6與該晶片承載件2 0間的熱膨脹 不匹配而產生翹曲現象;同時,亦由於該連接部3 1係用以 連接兩相鄰封裝單元4 1,故而其仍可對兩端側之封裝單元 4 1發揮適度的拘束力,以對抗該封裝單元之4 1重力效應, 使其不致因重力而出現彎曲變形現象,一舉解決了習知上 的兩大問題,並藉其結構設計而將該封裝單元4 1間的拘束 1 I力控制於一理想適當值,以發揮穩固整體模壓結構的功 效。 前述完成模壓之半導體裝置4 0可如習知製程般,再於 i進行植球、切割與測試等各步驟後,即成為一薄型球柵陣 i列半導體封裝件,此些步驟倶與習知製程相同,此處將不 I再贅述;此外,前述模壓製程中用以包覆該晶片2 1並形成17437 United Test. Ptd Page 10 200532812 V. Description of the invention (7) Design, can form two long connecting parts 3 1 between two adjacent packaging units 4 1 after molding, at this time because of the long connecting part 3 The contact area between 1 and the wafer carrier 20 is not large, so it will not cause the packaging gel 26 to produce excessive restraints when thermally expanded, and the thermal expansion stress can be released by the two sides of the connection portion 31. Warping does not occur due to mismatch in thermal expansion between the packaging colloid 26 and the wafer carrier 20; at the same time, since the connection portion 31 is used to connect two adjacent packaging units 41, it can still be used. It exerts moderate restraint on the packaging unit 41 on both sides to counteract the gravity effect of the packaging unit 41, so that it will not cause bending and deformation due to gravity. It solves two conventional problems in one fell swoop. Its structural design controls the restraint 1 I force between the packaging units 41 to an ideal value to exert the effect of stabilizing the overall molding structure. The previously-molded semiconductor device 40 can be used as a conventional manufacturing process. After performing the steps of ball implantation, cutting, and testing at i, it becomes a thin ball grid array i-row semiconductor package. These steps are familiar The manufacturing process is the same, and I will not repeat it here. In addition, in the foregoing molding process, the wafer 21 is covered and formed.
I i本發明所設計之連接部3 1的封裝膠體2 6係為例如環氧樹脂 (E p〇X y R e s i η )之熱固性樹脂或聚碳酸酯(P〇1 y c a r b〇n a t e E s t e r)、丙稀酸_樹脂、聚氯化甲稀及聚酯類(P〇1 y e s t e r )樹脂材料之熱塑性樹脂,但其材料並非僅限於此。 本發明所揭示之半導體模壓製法及其模壓結構並非僅 限於前述之實施例,而可如第3 A圖所示,變更該上模具2 3 I之連接通道3 0設計,以令每一對應於晶片2 1之相鄰模穴2 5 1間均形成有連接通道30,並使該模穴2 5與連接通道30均於The packaging gel 2 6 of the connecting portion 31 designed in the present invention is, for example, a thermosetting resin such as epoxy resin (EpoXyResi η) or polycarbonate (Polycarbonate Ester), Thermoplastic resin of acrylic acid resin, polychloromethane and polyester resin (Polyester resin), but the material is not limited to this. The semiconductor molding method and the molding structure disclosed in the present invention are not limited to the foregoing embodiments, but as shown in FIG. 3A, the design of the connection channel 3 0 of the upper mold 2 3 I can be changed so that each corresponds to Adjacent mold cavities 2 5 1 of wafer 21 are each formed with a connecting channel 30, and the cavity 2 5 and the connecting channel 30 are both
200532812 五、發明說明(8) 梃壓製程中填充滿封裝膠體2 6,而可如第3 B圖般於脫模步 驟後,令所有封裝單元4 1間均形成相互連接且由該封裝膠 體2 6組成之連接部3 1,因此,該晶片承載件2 0上之封裝膠 體2 6均將一體成型而包覆每一晶片2 1,且由於該連接部3 1 係如第4圖之上視圖所示為兩長條狀且相互間隔一距離的 封裝膠體2 6,故而將不致令該一體成型之封裝膠體2 6接觸 該晶片承載件2 0過大之面積,而可如前述實施例般,使每 封裝單元4 1間皆維持一適當的拘束力,防止該模壓結構 膨脹係數不匹配與重力所致的翹曲變形現象,發揮穩 構之功效。 綜上所述,本發明所提出之半導體模壓製法及其模壓 結構,確可藉其連接部之設計,發揮穩固整體結構之功 效,既不致因材料熱膨脹係數不匹配而出現翹曲破壞,亦 不致因重力效應而導致結構彎曲變形,充分提升了結構強 度與製程良率,解決了習知技術所遭逢之問題。 以上所述者僅係用以說明本發明之具體實例而已,並 非用以限定本發明之可實施範圍,舉凡熟習該項技術者在 未脫離本發明所揭示之精神與技術思想下所完成之一切箏 飾或改變,仍應由後述之申請專利範圍所涵蓋。200532812 V. Description of the invention (8) The encapsulation gel 2 6 is filled during the pressing process, and after the demolding step as shown in FIG. 3B, all the packaging units 41 are connected to each other and the encapsulation gel 2 is formed. 6 connecting portions 31, so the encapsulant 2 6 on the wafer carrier 20 will be integrally formed to cover each wafer 21, and since the connecting portion 3 1 is as shown in the top view of FIG. 4 Shown are two long strips of packaging gel 26 which are spaced apart from each other, so that the integrally formed packaging gel 26 will not contact the wafer carrier 20 with an excessively large area, but can be made as in the previous embodiment. Each of the packaging units 41 maintains a proper restraint force to prevent the mismatch of the expansion coefficient of the molded structure and the warping deformation caused by gravity, and exerts the effect of stabilization. In summary, the semiconductor molding method and the molding structure proposed by the present invention can indeed play a role in stabilizing the overall structure by the design of the connection portion, which will not cause warpage damage due to the mismatch of the thermal expansion coefficients of the materials, nor will it cause damage. The bending deformation of the structure due to the effect of gravity fully improves the strength of the structure and the yield of the process, and solves the problems encountered in the conventional technology. The above are only used to explain specific examples of the present invention, and are not intended to limit the implementable scope of the present invention. For example, those who are familiar with the technology can do all without departing from the spirit and technical ideas disclosed by the present invention. The zither decoration or alteration shall still be covered by the patent application scope mentioned later.
17437 聯測.ptd 第12頁 200532812 丨圖式簡單說明 i【圖式簡單說明】17437 联 测 .ptd Page 12 200532812 丨 Simple illustration i [Simplified illustration]
17437 聯測.ptd 第13頁 200532812 圖式簡單說明 24 下 模 具 25 模 26 封 裝 膠 體 30 連 接 通 道 31 連 接 部 40 半 導 體 裝 置 41 封 裝 單 元 50 球 棚· 陣 列 封裝件 51 基 板 52 晶 片 53 銲 線 54 導 電 跡 線 層 5 5 封 裝 膠 體 56 銲 球 61 基 板 條 片 62 基 板 單 元 6· 封 裝 線 64 基 板 連 接 部 65 晶 片 66 銲 線 67 封 裝 單 元 68 封 裝 膠 體 69 空 隙17437 Joint test. Ptd Page 13 200532812 Brief description of the drawings 24 Lower mold 25 Mold 26 Encapsulation gel 30 Connection channel 31 Connection portion 40 Semiconductor device 41 Packaging unit 50 Dome · Array package 51 Substrate 52 Wafer 53 Welding wire 54 Conductive trace Line layer 5 5 Encapsulant 56 Solder ball 61 Substrate strip 62 Substrate unit 6 · Encapsulation line 64 Substrate connection 65 Chip 66 Weld wire 67 Encapsulation unit 68 Encapsulation gel 69 Gap
17437 聯測.ptd 第14頁17437 Joint Test.ptd Page 14
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| Application Number | Priority Date | Filing Date | Title |
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| TW93107387A TWI229392B (en) | 2004-03-19 | 2004-03-19 | Semiconductor molding structure and method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI419261B (en) * | 2011-09-07 | 2013-12-11 | Unimicron Technology Crop | Method for separating ic substrate and support component |
| TWI451546B (en) * | 2010-10-29 | 2014-09-01 | 日月光半導體製造股份有限公司 | Stacked package structure, package structure thereof and manufacturing method of package structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI451546B (en) * | 2010-10-29 | 2014-09-01 | 日月光半導體製造股份有限公司 | Stacked package structure, package structure thereof and manufacturing method of package structure |
| TWI419261B (en) * | 2011-09-07 | 2013-12-11 | Unimicron Technology Crop | Method for separating ic substrate and support component |
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