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TW200511906A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
TW200511906A
TW200511906A TW093124626A TW93124626A TW200511906A TW 200511906 A TW200511906 A TW 200511906A TW 093124626 A TW093124626 A TW 093124626A TW 93124626 A TW93124626 A TW 93124626A TW 200511906 A TW200511906 A TW 200511906A
Authority
TW
Taiwan
Prior art keywords
semiconductor element
semiconductor device
manufacturing
leads
opening
Prior art date
Application number
TW093124626A
Other languages
English (en)
Other versions
TWI269612B (en
Inventor
Hiroshi Inoguchi
Original Assignee
Sanyo Electric Co
Kanto Sanyo Semiconductors Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co, Kanto Sanyo Semiconductors Co filed Critical Sanyo Electric Co
Publication of TW200511906A publication Critical patent/TW200511906A/zh
Application granted granted Critical
Publication of TWI269612B publication Critical patent/TWI269612B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02216—Butterfly-type, i.e. with electrode pins extending horizontally from the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0236—Fixing laser chips on mounts using an adhesive
    • H10W90/754—
    • H10W90/756—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Lasers (AREA)
TW093124626A 2003-09-12 2004-08-17 Semiconductor device and its manufacturing method TWI269612B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003321051A JP2005093494A (ja) 2003-09-12 2003-09-12 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
TW200511906A true TW200511906A (en) 2005-03-16
TWI269612B TWI269612B (en) 2006-12-21

Family

ID=34452834

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093124626A TWI269612B (en) 2003-09-12 2004-08-17 Semiconductor device and its manufacturing method

Country Status (5)

Country Link
US (1) US7307288B2 (zh)
JP (1) JP2005093494A (zh)
KR (1) KR100650463B1 (zh)
CN (1) CN1595641B (zh)
TW (1) TWI269612B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101114637B (zh) * 2006-07-25 2010-05-12 日月光半导体制造股份有限公司 半导体元件封装结构
JP4118320B1 (ja) * 2007-09-17 2008-07-16 株式会社エレメント電子 実装基板およびそれを用いた薄型発光装置の製造方法
JP5574667B2 (ja) * 2009-10-21 2014-08-20 キヤノン株式会社 パッケージ、半導体装置、それらの製造方法及び機器
TWI462348B (zh) * 2011-01-27 2014-11-21 矽品精密工業股份有限公司 發光裝置及其製法
CN105229806B (zh) * 2013-05-23 2019-03-15 Lg伊诺特有限公司 发光模块
CN106206614B (zh) * 2016-08-25 2019-03-12 上海天马微电子有限公司 一种柔性显示面板和柔性显示装置
WO2020037552A1 (en) * 2018-08-22 2020-02-27 Shenzhen Raysees Technology Co., Ltd. Vertical cavity surface emitting laser (vcsel) array package and manufacturing method
CN111739844B (zh) * 2020-08-06 2021-01-29 深圳市汇顶科技股份有限公司 一种芯片及芯片封装方法、电子设备

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5367530A (en) * 1992-05-29 1994-11-22 Sanyo Electric Co., Ltd. Semiconductor laser apparatus
KR100244708B1 (ko) 1996-12-10 2000-02-15 김영환 반도체 패키지
DE19700393C2 (de) * 1997-01-08 2002-03-14 Infineon Technologies Ag Gehäuse mit einer Halbleiter-Sensoranordnung und Verfahren zu deren Herstellung
JP3958864B2 (ja) 1998-05-21 2007-08-15 浜松ホトニクス株式会社 透明樹脂封止光半導体装置
KR100333386B1 (ko) * 1999-06-29 2002-04-18 박종섭 칩 스캐일 패키지
JP2001077277A (ja) 1999-09-03 2001-03-23 Sony Corp 半導体パッケージおよび半導体パッケージ製造方法
US6720207B2 (en) * 2001-02-14 2004-04-13 Matsushita Electric Industrial Co., Ltd. Leadframe, resin-molded semiconductor device including the leadframe, method of making the leadframe and method for manufacturing the device
TW490826B (en) 2001-05-02 2002-06-11 Siliconware Precision Industries Co Ltd Semiconductor package device and its manufacture method
CN1200464C (zh) * 2001-08-20 2005-05-04 翰立光电股份有限公司 电致发光元件的封装方法
JP4095827B2 (ja) * 2002-05-10 2008-06-04 株式会社ルネサステクノロジ 半導体装置
US6680525B1 (en) * 2003-01-09 2004-01-20 Kingpak Technology Inc. Stacked structure of an image sensor

Also Published As

Publication number Publication date
CN1595641B (zh) 2010-05-12
KR100650463B1 (ko) 2006-11-29
JP2005093494A (ja) 2005-04-07
TWI269612B (en) 2006-12-21
KR20050027016A (ko) 2005-03-17
CN1595641A (zh) 2005-03-16
US20050093129A1 (en) 2005-05-05
US7307288B2 (en) 2007-12-11

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees