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TW200511566A - Image sensor production method and image sensor - Google Patents

Image sensor production method and image sensor

Info

Publication number
TW200511566A
TW200511566A TW093117634A TW93117634A TW200511566A TW 200511566 A TW200511566 A TW 200511566A TW 093117634 A TW093117634 A TW 093117634A TW 93117634 A TW93117634 A TW 93117634A TW 200511566 A TW200511566 A TW 200511566A
Authority
TW
Taiwan
Prior art keywords
image sensor
region
conductivity type
production method
semiconductor substrate
Prior art date
Application number
TW093117634A
Other languages
English (en)
Other versions
TWI335666B (en
Inventor
Kensuke Sawase
Yuji Matsumoto
Kiyotaka Sawa
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of TW200511566A publication Critical patent/TW200511566A/zh
Application granted granted Critical
Publication of TWI335666B publication Critical patent/TWI335666B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW093117634A 2003-07-16 2004-06-18 Image sensor production method and image sensor TWI335666B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003197965A JP4219755B2 (ja) 2003-07-16 2003-07-16 イメージセンサの製造方法およびイメージセンサ

Publications (2)

Publication Number Publication Date
TW200511566A true TW200511566A (en) 2005-03-16
TWI335666B TWI335666B (en) 2011-01-01

Family

ID=34055883

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093117634A TWI335666B (en) 2003-07-16 2004-06-18 Image sensor production method and image sensor

Country Status (5)

Country Link
US (2) US7199412B2 (zh)
JP (1) JP4219755B2 (zh)
KR (1) KR20050009211A (zh)
CN (1) CN100407431C (zh)
TW (1) TWI335666B (zh)

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JP2006041196A (ja) * 2004-07-27 2006-02-09 Nec Electronics Corp 固体撮像素子およびその製造方法
JP4224036B2 (ja) * 2005-03-17 2009-02-12 富士通マイクロエレクトロニクス株式会社 フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法
JP4658732B2 (ja) * 2005-08-09 2011-03-23 ローム株式会社 フォトダイオードおよびフォトトランジスタ
US8352323B2 (en) * 2007-11-30 2013-01-08 Blaze Mobile, Inc. Conducting an online payment transaction using an NFC enabled mobile communication device
US20080217716A1 (en) * 2007-03-09 2008-09-11 Mauritzson Richard A Imaging apparatus, method, and system having reduced dark current
KR100840099B1 (ko) 2007-07-04 2008-06-19 삼성에스디아이 주식회사 포토 다이어드를 구비한 유기전계발광 소자의 제조 방법
KR100840098B1 (ko) 2007-07-04 2008-06-19 삼성에스디아이 주식회사 유기전계발광 소자 및 그의 제조 방법
KR100882693B1 (ko) * 2007-09-14 2009-02-06 삼성모바일디스플레이주식회사 발광표시장치 및 그의 제조방법
KR100884458B1 (ko) 2007-09-14 2009-02-20 삼성모바일디스플레이주식회사 유기전계발광장치 및 그의 제조 방법
US8230263B2 (en) * 2007-09-19 2012-07-24 Lsi Corporation Automated specification based functional test generation infrastructure
JP5823294B2 (ja) 2009-09-07 2015-11-25 ローム株式会社 半導体装置およびその製造方法
US8884241B2 (en) * 2011-09-08 2014-11-11 Freescale Semiconductor, Inc. Incident capacitive sensor
JP6484513B2 (ja) * 2014-10-08 2019-03-13 株式会社テクノロジーハブ 画像センサ
JP2018082068A (ja) * 2016-11-17 2018-05-24 ローム株式会社 複合フォトダイオード及びそれを用いた光センサ
US10777611B1 (en) * 2019-09-27 2020-09-15 Sony Semiconductor Solutions Corporation Image sensor
WO2021131651A1 (ja) * 2019-12-26 2021-07-01 浜松ホトニクス株式会社 測距イメージセンサ及びその製造方法

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JPH0715981B2 (ja) 1985-12-03 1995-02-22 松下電子工業株式会社 固体撮像装置
JPH01216581A (ja) 1988-02-25 1989-08-30 Fuji Electric Co Ltd 半導体装置
US5336911A (en) * 1988-05-10 1994-08-09 Seiko Epson Corporation Semiconductor device
JPH05243549A (ja) 1992-03-02 1993-09-21 Matsushita Electron Corp 固体撮像装置およびその製造方法
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CN1091302C (zh) * 1995-04-05 2002-09-18 松下电器产业株式会社 光检测装置及其制造方法
JP3170463B2 (ja) * 1996-09-30 2001-05-28 シャープ株式会社 回路内蔵受光素子
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JP3779199B2 (ja) * 2001-11-26 2006-05-24 株式会社ルネサステクノロジ 半導体装置
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JP4154165B2 (ja) * 2002-04-05 2008-09-24 キヤノン株式会社 光電変換素子及びそれを用いた固体撮像装置、カメラ及び画像読み取り装置
JP2003303949A (ja) * 2002-04-11 2003-10-24 Canon Inc 撮像装置
KR100508086B1 (ko) * 2002-09-11 2005-08-17 삼성전자주식회사 씨모스 이미지 센서 및 그 제조방법
JP2004119713A (ja) * 2002-09-26 2004-04-15 Toshiba Corp 半導体光センサ装置
US6921934B2 (en) * 2003-03-28 2005-07-26 Micron Technology, Inc. Double pinned photodiode for CMOS APS and method of formation

Also Published As

Publication number Publication date
CN100407431C (zh) 2008-07-30
US7199412B2 (en) 2007-04-03
JP2005038938A (ja) 2005-02-10
JP4219755B2 (ja) 2009-02-04
CN1577879A (zh) 2005-02-09
US20060017075A1 (en) 2006-01-26
US20050012167A1 (en) 2005-01-20
TWI335666B (en) 2011-01-01
KR20050009211A (ko) 2005-01-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees