TW200511408A - Apparatus for laser beam machining, machining mask, method for laser beam machining, method for manufacturing a semiconductor device and semiconductor device - Google Patents
Apparatus for laser beam machining, machining mask, method for laser beam machining, method for manufacturing a semiconductor device and semiconductor deviceInfo
- Publication number
- TW200511408A TW200511408A TW093119083A TW93119083A TW200511408A TW 200511408 A TW200511408 A TW 200511408A TW 093119083 A TW093119083 A TW 093119083A TW 93119083 A TW93119083 A TW 93119083A TW 200511408 A TW200511408 A TW 200511408A
- Authority
- TW
- Taiwan
- Prior art keywords
- laser beam
- machining
- semiconductor device
- beam machining
- manufacturing
- Prior art date
Links
Classifications
-
- H10P50/282—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- H10P52/00—
-
- H10P54/00—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003309338A JP3842769B2 (ja) | 2003-09-01 | 2003-09-01 | レーザ加工装置、レーザ加工方法、及び半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200511408A true TW200511408A (en) | 2005-03-16 |
| TWI240319B TWI240319B (en) | 2005-09-21 |
Family
ID=31884833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093119083A TWI240319B (en) | 2003-09-01 | 2004-06-29 | Apparatus for laser beam machining, machining mask, method for laser beam machining, method for manufacturing a semiconductor device and semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20050045090A1 (zh) |
| JP (1) | JP3842769B2 (zh) |
| CN (1) | CN100339175C (zh) |
| GB (1) | GB2405369B (zh) |
| TW (1) | TWI240319B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI759044B (zh) * | 2020-12-30 | 2022-03-21 | 環球晶圓股份有限公司 | 碳化矽晶片的雷射雕刻方法 |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6676878B2 (en) | 2001-01-31 | 2004-01-13 | Electro Scientific Industries, Inc. | Laser segmented cutting |
| JP2005209719A (ja) * | 2004-01-20 | 2005-08-04 | Disco Abrasive Syst Ltd | 半導体ウエーハの加工方法 |
| EP1598140A1 (de) * | 2004-05-19 | 2005-11-23 | Synova S.A. | Laserbearbeitung eines Werkstücks |
| JP2006032419A (ja) * | 2004-07-12 | 2006-02-02 | Disco Abrasive Syst Ltd | ウエーハのレーザー加工方法 |
| DE102006003591A1 (de) * | 2005-01-26 | 2006-08-17 | Disco Corporation | Laserstrahlbearbeitungsmaschine |
| JP4684687B2 (ja) * | 2005-03-11 | 2011-05-18 | 株式会社ディスコ | ウエーハのレーザー加工方法および加工装置 |
| JP4845592B2 (ja) * | 2005-05-30 | 2011-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8153511B2 (en) | 2005-05-30 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4777700B2 (ja) * | 2005-06-17 | 2011-09-21 | 株式会社ディスコ | レーザ加工方法 |
| WO2007055010A1 (ja) | 2005-11-10 | 2007-05-18 | Renesas Technology Corp. | 半導体装置の製造方法および半導体装置 |
| JP2013080972A (ja) * | 2005-11-10 | 2013-05-02 | Renesas Electronics Corp | 半導体装置の製造方法 |
| JP2007299947A (ja) * | 2006-04-28 | 2007-11-15 | Toshiba Corp | 半導体装置の製造方法 |
| US8198566B2 (en) * | 2006-05-24 | 2012-06-12 | Electro Scientific Industries, Inc. | Laser processing of workpieces containing low-k dielectric material |
| US8624157B2 (en) | 2006-05-25 | 2014-01-07 | Electro Scientific Industries, Inc. | Ultrashort laser pulse wafer scribing |
| DE602007006307D1 (de) * | 2006-06-20 | 2010-06-17 | Univ Leuven Kath | Verfahren und vorrichtung zur in-situ-überwachung und rückkopplungssteuerung selektiver laserpulverbearbeitung |
| JP5196097B2 (ja) * | 2006-08-29 | 2013-05-15 | 日亜化学工業株式会社 | 半導体発光素子の製造方法及び半導体発光素子、並びにそれを用いた発光装置 |
| JP2008071870A (ja) * | 2006-09-13 | 2008-03-27 | Toshiba Corp | 半導体素子の製造方法 |
| JP5109363B2 (ja) * | 2006-12-15 | 2012-12-26 | 日亜化学工業株式会社 | 半導体発光素子の製造方法、半導体発光素子及び発光装置 |
| US8294062B2 (en) * | 2007-08-20 | 2012-10-23 | Universal Laser Systems, Inc. | Laser beam positioning systems for material processing and methods for using such systems |
| JP4541394B2 (ja) * | 2007-10-31 | 2010-09-08 | パナソニック株式会社 | 金属ローラの製造方法 |
| WO2011004437A1 (ja) * | 2009-07-10 | 2011-01-13 | 三菱電機株式会社 | レーザ加工方法および装置 |
| WO2011145131A1 (ja) * | 2010-05-17 | 2011-11-24 | 三菱電機株式会社 | 光起電力装置の製造方法及び光起電力装置の製造装置 |
| US8642448B2 (en) * | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
| JP5853331B2 (ja) * | 2011-03-11 | 2016-02-09 | 株式会社ブイ・テクノロジー | レーザ照射装置及びそれを使用した液晶表示パネルの輝点修正方法 |
| US8703581B2 (en) * | 2011-06-15 | 2014-04-22 | Applied Materials, Inc. | Water soluble mask for substrate dicing by laser and plasma etch |
| US8557683B2 (en) * | 2011-06-15 | 2013-10-15 | Applied Materials, Inc. | Multi-step and asymmetrically shaped laser beam scribing |
| US8951819B2 (en) * | 2011-07-11 | 2015-02-10 | Applied Materials, Inc. | Wafer dicing using hybrid split-beam laser scribing process with plasma etch |
| JP2013081961A (ja) * | 2011-10-06 | 2013-05-09 | Disco Corp | パシベーション膜が積層された基板のアブレーション加工方法 |
| DE102011054891B4 (de) | 2011-10-28 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds |
| JP5995428B2 (ja) * | 2011-11-11 | 2016-09-21 | 株式会社ディスコ | カバー付きチップの製造方法 |
| KR20140105239A (ko) * | 2013-02-22 | 2014-09-01 | 삼성디스플레이 주식회사 | 레이저 빔을 이용한 마스크 제조 방법 및 마스크 제조 장치 |
| JP5906265B2 (ja) * | 2014-03-03 | 2016-04-20 | 株式会社ディスコ | ウエーハの分割方法 |
| JP6347714B2 (ja) * | 2014-10-02 | 2018-06-27 | 株式会社ディスコ | ウエーハの加工方法 |
| WO2016084578A1 (ja) * | 2014-11-26 | 2016-06-02 | 京セラ株式会社 | 半導体封止用樹脂組成物および半導体装置 |
| JP6303997B2 (ja) * | 2014-11-28 | 2018-04-04 | 三菱電機株式会社 | 半導体レーザの製造方法 |
| DE102015000102A1 (de) * | 2015-01-14 | 2016-07-14 | Cl Schutzrechtsverwaltungs Gmbh | Vorrichtung zur generativen Herstellung dreidimensionaler Bauteile |
| JP5994952B2 (ja) * | 2015-02-03 | 2016-09-21 | 大日本印刷株式会社 | 蒸着マスクの製造方法、蒸着マスク製造装置、レーザー用マスクおよび有機半導体素子の製造方法 |
| JP6552898B2 (ja) * | 2015-07-13 | 2019-07-31 | 株式会社ディスコ | 多結晶SiCウエーハの生成方法 |
| JP6545810B2 (ja) * | 2015-10-28 | 2019-07-17 | ギガフォトン株式会社 | 狭帯域化エキシマレーザ装置 |
| US10953470B2 (en) * | 2016-08-31 | 2021-03-23 | Raytheon Technologies Corporation | Scanning mirror navigation apparatus and method |
| DE102016219928A1 (de) * | 2016-10-13 | 2018-04-19 | Trumpf Werkzeugmaschinen Gmbh + Co. Kg | Verfahren und Vorrichtung zur Bestimmung und zur Regelung einer Fokusposition eines Bearbeitungsstrahls |
| JP6746224B2 (ja) * | 2016-11-18 | 2020-08-26 | 株式会社ディスコ | デバイスチップパッケージの製造方法 |
| KR102402998B1 (ko) * | 2017-05-22 | 2022-05-30 | 삼성디스플레이 주식회사 | 증착 마스크 제조방법 및 제조장치 |
| CN107433396B (zh) * | 2017-07-14 | 2018-10-09 | 中国科学院微电子研究所 | 一种激光加工晶圆的装置及方法 |
| JP6953876B2 (ja) * | 2017-08-04 | 2021-10-27 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
| JP6896344B2 (ja) * | 2017-09-22 | 2021-06-30 | 株式会社ディスコ | チップの製造方法 |
| JP6907093B2 (ja) * | 2017-10-24 | 2021-07-21 | 株式会社ディスコ | レーザー加工装置 |
| WO2019082313A1 (ja) * | 2017-10-25 | 2019-05-02 | 株式会社ニコン | 加工装置、及び、移動体の製造方法 |
| KR102310466B1 (ko) * | 2019-06-27 | 2021-10-13 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
| JP7435626B2 (ja) | 2019-12-26 | 2024-02-21 | 株式会社ニコン | ビーム加工装置 |
| DE102020206670A1 (de) | 2020-05-28 | 2021-12-02 | Trumpf Werkzeugmaschinen Gmbh + Co. Kg | Laserschneidverfahren und Laserschneidanlage |
| DE102021204313A1 (de) * | 2021-04-29 | 2022-11-03 | 3D-Micromac Ag | Verfahren und System zur Herstellung mikrostrukturierter Komponenten |
| CN114004547B (zh) * | 2021-12-30 | 2022-04-05 | 深圳市匠心智汇科技有限公司 | 扫描切割方法、装置、设备及计算机可读存储介质 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3422246A (en) * | 1965-08-18 | 1969-01-14 | Kearney & Trecker Corp | Laser cutting machine tool |
| US4689467A (en) * | 1982-12-17 | 1987-08-25 | Inoue-Japax Research Incorporated | Laser machining apparatus |
| JPS6240986A (ja) * | 1985-08-20 | 1987-02-21 | Fuji Electric Corp Res & Dev Ltd | レ−ザ−加工方法 |
| JPH0825046B2 (ja) * | 1985-12-19 | 1996-03-13 | トヨタ自動車株式会社 | レーザー溶接方法 |
| US5173582A (en) * | 1988-10-31 | 1992-12-22 | Fujitsu Limited | Charged particle beam lithography system and method |
| JPH05277776A (ja) * | 1992-03-31 | 1993-10-26 | Toshiba Corp | レーザビーム用マスク装置 |
| US5909617A (en) * | 1995-11-07 | 1999-06-01 | Micron Technology, Inc. | Method of manufacturing self-aligned resistor and local interconnect |
| JP3204307B2 (ja) * | 1998-03-20 | 2001-09-04 | 日本電気株式会社 | レーザ照射方法およびレーザ照射装置 |
| US6211488B1 (en) * | 1998-12-01 | 2001-04-03 | Accudyne Display And Semiconductor Systems, Inc. | Method and apparatus for separating non-metallic substrates utilizing a laser initiated scribe |
| JP2000271770A (ja) * | 1999-03-24 | 2000-10-03 | Sony Corp | エキシマレーザ加工装置、及びエキシマレーザ光の加工エネルギー強度の調整方法 |
| JP3279296B2 (ja) * | 1999-09-06 | 2002-04-30 | 株式会社日立製作所 | 半導体装置 |
| DE19963010B4 (de) * | 1999-12-22 | 2005-02-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Laserbearbeitung von Werkstücken |
| WO2002025646A1 (en) * | 2000-09-25 | 2002-03-28 | Koninklijke Philips Electronics N.V. | Optical scanning device |
| JP3660294B2 (ja) * | 2000-10-26 | 2005-06-15 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2003031466A (ja) * | 2001-07-13 | 2003-01-31 | Toshiba Corp | 半導体装置の製造方法及び製造装置 |
| TW550635B (en) * | 2001-03-09 | 2003-09-01 | Toshiba Corp | Manufacturing system of electronic devices |
| US6849825B2 (en) * | 2001-11-30 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
-
2003
- 2003-09-01 JP JP2003309338A patent/JP3842769B2/ja not_active Expired - Fee Related
-
2004
- 2004-01-08 US US10/752,540 patent/US20050045090A1/en not_active Abandoned
- 2004-01-14 GB GB0400800A patent/GB2405369B/en not_active Expired - Fee Related
- 2004-06-29 TW TW093119083A patent/TWI240319B/zh not_active IP Right Cessation
- 2004-08-31 CN CNB2004100741043A patent/CN100339175C/zh not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI759044B (zh) * | 2020-12-30 | 2022-03-21 | 環球晶圓股份有限公司 | 碳化矽晶片的雷射雕刻方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0400800D0 (en) | 2004-02-18 |
| TWI240319B (en) | 2005-09-21 |
| GB2405369B (en) | 2005-12-14 |
| GB2405369A (en) | 2005-03-02 |
| CN1590007A (zh) | 2005-03-09 |
| CN100339175C (zh) | 2007-09-26 |
| US20050045090A1 (en) | 2005-03-03 |
| JP2005074485A (ja) | 2005-03-24 |
| JP3842769B2 (ja) | 2006-11-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |