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TW200500817A - Pattern drawing apparatus and pattern drawing method - Google Patents

Pattern drawing apparatus and pattern drawing method

Info

Publication number
TW200500817A
TW200500817A TW093109909A TW93109909A TW200500817A TW 200500817 A TW200500817 A TW 200500817A TW 093109909 A TW093109909 A TW 093109909A TW 93109909 A TW93109909 A TW 93109909A TW 200500817 A TW200500817 A TW 200500817A
Authority
TW
Taiwan
Prior art keywords
pattern drawing
pattern
exposure
mirror device
small mirrors
Prior art date
Application number
TW093109909A
Other languages
English (en)
Other versions
TWI356973B (en
Inventor
Tadahiro Ohmi
Shigetoshi Sugawa
Kimio Yanagida
Kiwamu Takehisa
Original Assignee
Tadahiro Ohmi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003107776A external-priority patent/JP4344162B2/ja
Priority claimed from JP2003148362A external-priority patent/JP4502596B2/ja
Priority claimed from JP2003353433A external-priority patent/JP4250052B2/ja
Priority claimed from JP2003363460A external-priority patent/JP2005128238A/ja
Application filed by Tadahiro Ohmi filed Critical Tadahiro Ohmi
Publication of TW200500817A publication Critical patent/TW200500817A/zh
Application granted granted Critical
Publication of TWI356973B publication Critical patent/TWI356973B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW093109909A 2003-04-11 2004-04-09 Pattern drawing apparatus and pattern drawing meth TWI356973B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003107776A JP4344162B2 (ja) 2003-04-11 2003-04-11 パターン描画装置及びパターン描画方法
JP2003148362A JP4502596B2 (ja) 2003-05-26 2003-05-26 パターン描画方法及びパターン描画装置
JP2003353433A JP4250052B2 (ja) 2003-10-14 2003-10-14 パターン描画方法、及びパターン描画装置
JP2003363460A JP2005128238A (ja) 2003-10-23 2003-10-23 マスクリピータ、パターン描画装置、及びグレースケール手法

Publications (2)

Publication Number Publication Date
TW200500817A true TW200500817A (en) 2005-01-01
TWI356973B TWI356973B (en) 2012-01-21

Family

ID=33314357

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093109909A TWI356973B (en) 2003-04-11 2004-04-09 Pattern drawing apparatus and pattern drawing meth

Country Status (4)

Country Link
US (1) US7663734B2 (zh)
EP (1) EP1662552A1 (zh)
TW (1) TWI356973B (zh)
WO (1) WO2004095549A1 (zh)

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US11309163B2 (en) 2019-11-07 2022-04-19 Applied Materials, Inc. Multibeamlet charged particle device and method

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KR101442147B1 (ko) 2008-01-30 2014-11-03 삼성디스플레이 주식회사 액정 표시 장치
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JP5253037B2 (ja) * 2008-08-18 2013-07-31 株式会社日立ハイテクノロジーズ 露光装置、露光方法、及び表示用パネル基板の製造方法
EP2336810A1 (de) * 2009-12-18 2011-06-22 Boegli-Gravures S.A. Verfahren und Vorrichtung zur Erzeugung von Farbmustern mittels Beugungsgitter
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KR102099880B1 (ko) * 2013-05-06 2020-04-10 삼성전자 주식회사 유효 열 전자 강화 유닛을 갖는 리소그래피 장치 및 패턴 형성 방법
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DE102014203040A1 (de) * 2014-02-19 2015-08-20 Carl Zeiss Smt Gmbh Beleuchtungssystem einer mikrolithographischen Projektionsbelichtungsanlage und Verfahren zum Betreiben eines solchen
CN108062007B (zh) * 2016-11-07 2019-11-12 俞庆平 一种提高光刻能量均匀性和改善拼接的方法
JP7020859B2 (ja) * 2017-10-24 2022-02-16 キヤノン株式会社 照明光学系、露光装置および物品の製造方法
KR102511881B1 (ko) 2019-08-14 2023-03-20 세라믹 데이터 솔루션즈 게엠베하 정보의 장기 저장을 위한 방법 및 그를 위한 저장 매체
WO2022002444A1 (en) 2020-07-03 2022-01-06 Ceramic Data Solution GmbH Information storage method and information storage medium with increased storage density by multi-bit coding
CN115843362B (zh) 2020-07-03 2025-07-04 陶瓷数据解决方案有限公司 用于长期存储信息的方法和信息存储介质的提高存储能力
EP3955248B1 (en) * 2020-08-11 2025-12-17 Ceramic Data Solutions GmbH Data recording on ceramic material
CN112286008B (zh) * 2020-09-27 2022-07-05 江苏迪盛智能科技有限公司 一种激光直写能量校正方法及装置
KR102866346B1 (ko) 2021-03-16 2025-10-01 세라믹 데이터 솔루션즈 게엠베하 초고해상도 기술들을 이용하는 데이터 캐리어, 판독 방법 및 시스템
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11309163B2 (en) 2019-11-07 2022-04-19 Applied Materials, Inc. Multibeamlet charged particle device and method
TWI772942B (zh) * 2019-11-07 2022-08-01 美商應用材料股份有限公司 多小束帶電粒子裝置和方法

Also Published As

Publication number Publication date
US20060147841A1 (en) 2006-07-06
WO2004095549A1 (ja) 2004-11-04
US7663734B2 (en) 2010-02-16
EP1662552A1 (en) 2006-05-31
TWI356973B (en) 2012-01-21

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