TW200504801A - Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device - Google Patents
Chemical mechanical polishing method of organic film and method of manufacturing semiconductor deviceInfo
- Publication number
- TW200504801A TW200504801A TW093114973A TW93114973A TW200504801A TW 200504801 A TW200504801 A TW 200504801A TW 093114973 A TW093114973 A TW 093114973A TW 93114973 A TW93114973 A TW 93114973A TW 200504801 A TW200504801 A TW 200504801A
- Authority
- TW
- Taiwan
- Prior art keywords
- slurry
- organic film
- functional group
- chemical mechanical
- mechanical polishing
- Prior art date
Links
Classifications
-
- H10W20/085—
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H10P50/73—
-
- H10P95/08—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003157154A JP4202826B2 (ja) | 2003-06-02 | 2003-06-02 | 有機膜の化学的機械的研磨方法および半導体装置の製造方法 |
| JP2004076408A JP4202955B2 (ja) | 2004-03-17 | 2004-03-17 | 有機膜の化学的機械的研磨方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200504801A true TW200504801A (en) | 2005-02-01 |
| TWI241626B TWI241626B (en) | 2005-10-11 |
Family
ID=33513362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093114973A TWI241626B (en) | 2003-06-02 | 2004-05-26 | Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7452819B2 (zh) |
| CN (1) | CN100346451C (zh) |
| TW (1) | TWI241626B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI730970B (zh) * | 2015-06-25 | 2021-06-21 | 日商福吉米股份有限公司 | 研磨方法及雜質去除用組成物以及基板及其製造方法 |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4160569B2 (ja) * | 2004-05-31 | 2008-10-01 | 株式会社東芝 | 半導体装置の製造方法 |
| JP4776269B2 (ja) * | 2005-04-28 | 2011-09-21 | 株式会社東芝 | 金属膜cmp用スラリー、および半導体装置の製造方法 |
| JP4987254B2 (ja) * | 2005-06-22 | 2012-07-25 | 株式会社東芝 | 半導体装置の製造方法 |
| JP4768335B2 (ja) * | 2005-06-30 | 2011-09-07 | 株式会社東芝 | 有機膜の化学的機械的研磨方法、半導体装置の製造方法、およびプログラム |
| WO2007019342A2 (en) * | 2005-08-05 | 2007-02-15 | Advanced Technology Materials, Inc. | High throughput chemical mechanical polishing composition for metal film planarization |
| JP4868840B2 (ja) * | 2005-11-30 | 2012-02-01 | Jsr株式会社 | 半導体装置の製造方法 |
| JP2007220891A (ja) * | 2006-02-16 | 2007-08-30 | Toshiba Corp | ポストcmp処理液、およびこれを用いた半導体装置の製造方法 |
| US8232344B2 (en) * | 2007-06-27 | 2012-07-31 | Canon Kabushiki Kaisha | Structure, target substance-detecting element and target substance-detecting kit |
| US8357286B1 (en) | 2007-10-29 | 2013-01-22 | Semcon Tech, Llc | Versatile workpiece refining |
| JP2009123782A (ja) * | 2007-11-12 | 2009-06-04 | Toshiba Corp | 半導体装置の製造方法 |
| JP2009146998A (ja) * | 2007-12-12 | 2009-07-02 | Toshiba Corp | 半導体装置の製造方法 |
| EP2427523B1 (en) | 2009-05-06 | 2015-10-28 | Basf Se | An aqueous metal polishing agent comprising a polymeric abrasive containing pendant functional groups and its use in a cmp process |
| JP5759888B2 (ja) * | 2011-12-28 | 2015-08-05 | 東洋ゴム工業株式会社 | 研磨パッド |
| US9059194B2 (en) * | 2013-01-10 | 2015-06-16 | International Business Machines Corporation | High-K and metal filled trench-type EDRAM capacitor with electrode depth and dimension control |
| AT513200A1 (de) * | 2013-02-27 | 2014-02-15 | Berndorf Band Gmbh | Poliertuch und Polierverfahren |
| US20150021513A1 (en) * | 2013-07-17 | 2015-01-22 | Yun-jeong Kim | Cmp slurry composition for polishing an organic layer and method of forming a semiconductor device using the same |
| FR3008903B1 (fr) * | 2013-07-29 | 2015-07-31 | Commissariat Energie Atomique | Depot par enduction centrifuge d'une couche mince structuree sur un substrat |
| US9604338B2 (en) * | 2015-08-04 | 2017-03-28 | Texas Instruments Incorporated | Method to improve CMP scratch resistance for non planar surfaces |
| KR102447178B1 (ko) | 2015-09-01 | 2022-09-26 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| US10037889B1 (en) | 2017-03-29 | 2018-07-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Cationic particle containing slurries and methods of using them for CMP of spin-on carbon films |
| EP3907562B1 (en) * | 2019-01-03 | 2024-05-15 | Boe Technology Group Co., Ltd. | Template preparation method |
| CN114683162B (zh) * | 2020-12-29 | 2023-09-12 | 中芯集成电路(宁波)有限公司 | 一种平坦化工艺方法 |
| CN114291784B (zh) * | 2021-07-19 | 2025-05-13 | 中北大学 | 一种基于大马士革工艺的mems开关牺牲层的制备方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0695620B2 (ja) | 1989-11-30 | 1994-11-24 | マスプロ電工株式会社 | テレビ信号増幅装置 |
| JP3172008B2 (ja) | 1993-09-17 | 2001-06-04 | 株式会社東芝 | 半導体装置の製造方法 |
| US6200901B1 (en) * | 1998-06-10 | 2001-03-13 | Micron Technology, Inc. | Polishing polymer surfaces on non-porous CMP pads |
| JP2000080352A (ja) * | 1998-06-11 | 2000-03-21 | Allied Signal Inc | 低誘電率材料用研磨用スラリ―としての水系金属酸化物ゾル |
| US6528364B1 (en) * | 1998-08-24 | 2003-03-04 | Micron Technology, Inc. | Methods to form electronic devices and methods to form a material over a semiconductive substrate |
| US6152148A (en) * | 1998-09-03 | 2000-11-28 | Honeywell, Inc. | Method for cleaning semiconductor wafers containing dielectric films |
| KR100472882B1 (ko) * | 1999-01-18 | 2005-03-07 | 가부시끼가이샤 도시바 | 수계 분산체, 이를 이용한 화학 기계 연마용 수계 분산체조성물, 웨이퍼 표면의 연마 방법 및 반도체 장치의 제조방법 |
| US20010013507A1 (en) * | 1999-02-18 | 2001-08-16 | Hosali Sharath D. | Method for CMP of low dielectric constant polymer layers |
| EP1071121A1 (en) | 1999-07-19 | 2001-01-24 | International Business Machines Corporation | Process for the formation of a collar oxide in a trench in a semiconductor substrate |
| US6443812B1 (en) * | 1999-08-24 | 2002-09-03 | Rodel Holdings Inc. | Compositions for insulator and metal CMP and methods relating thereto |
| JP4041252B2 (ja) | 1999-11-01 | 2008-01-30 | 株式会社東芝 | 化学機械研磨用粒子及び化学機械研磨用水系分散体 |
| KR100444239B1 (ko) * | 1999-11-22 | 2004-08-11 | 제이에스알 가부시끼가이샤 | 복합화 입자의 제조 방법, 이 방법에 의해 제조되는복합화 입자 및 이 복합화 입자를 함유하는 화학 기계연마용 수계 분산체, 및 화학 기계 연마용 수계 분산체의제조 방법 |
| JP2001277105A (ja) | 2000-03-31 | 2001-10-09 | Sumitomo Bakelite Co Ltd | 研磨材及び共摺り表面加工法 |
| US6416685B1 (en) * | 2000-04-11 | 2002-07-09 | Honeywell International Inc. | Chemical mechanical planarization of low dielectric constant materials |
| JP4123685B2 (ja) | 2000-05-18 | 2008-07-23 | Jsr株式会社 | 化学機械研磨用水系分散体 |
| CN1207328C (zh) * | 2001-03-22 | 2005-06-22 | 北京国瑞升科技有限公司 | 一种抛光膜及其制备方法 |
| US6568997B2 (en) * | 2001-04-05 | 2003-05-27 | Rodel Holdings, Inc. | CMP polishing composition for semiconductor devices containing organic polymer particles |
| JP4053755B2 (ja) * | 2001-09-28 | 2008-02-27 | 株式会社東芝 | Cmp用スラリーおよび半導体装置の製造方法 |
| JP4085356B2 (ja) | 2001-09-28 | 2008-05-14 | 株式会社Sumco | 半導体ウェーハの洗浄乾燥方法 |
| JP4187497B2 (ja) * | 2002-01-25 | 2008-11-26 | Jsr株式会社 | 半導体基板の化学機械研磨方法 |
| US6638328B1 (en) * | 2002-04-25 | 2003-10-28 | Taiwan Semiconductor Manufacturing Co. Ltd | Bimodal slurry system |
| JP2004031616A (ja) | 2002-06-26 | 2004-01-29 | Sony Corp | 研磨スラリー、研磨方法および半導体装置の製造方法 |
| JP2004128211A (ja) * | 2002-10-02 | 2004-04-22 | Toshiba Corp | 樹脂粒子を用いた半導体基板上の有機膜の研磨方法とスラリー |
| JP3692109B2 (ja) * | 2002-10-24 | 2005-09-07 | 株式会社東芝 | 半導体装置の製造方法 |
| US6641632B1 (en) * | 2002-11-18 | 2003-11-04 | International Business Machines Corporation | Polishing compositions and use thereof |
| JP2005014206A (ja) | 2003-05-30 | 2005-01-20 | Sumitomo Chemical Co Ltd | 金属研磨剤組成物 |
| TW200427827A (en) * | 2003-05-30 | 2004-12-16 | Sumitomo Chemical Co | Metal polishing composition |
-
2004
- 2004-05-26 TW TW093114973A patent/TWI241626B/zh not_active IP Right Cessation
- 2004-05-28 US US10/855,529 patent/US7452819B2/en not_active Expired - Lifetime
- 2004-06-02 CN CNB2004100461803A patent/CN100346451C/zh not_active Expired - Fee Related
-
2008
- 2008-10-24 US US12/289,326 patent/US8685857B2/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI730970B (zh) * | 2015-06-25 | 2021-06-21 | 日商福吉米股份有限公司 | 研磨方法及雜質去除用組成物以及基板及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100346451C (zh) | 2007-10-31 |
| TWI241626B (en) | 2005-10-11 |
| US8685857B2 (en) | 2014-04-01 |
| CN1574205A (zh) | 2005-02-02 |
| US7452819B2 (en) | 2008-11-18 |
| US20040253822A1 (en) | 2004-12-16 |
| US20090068841A1 (en) | 2009-03-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |