JPS57162340A - Annealing method for silicon semiconductor - Google Patents
Annealing method for silicon semiconductorInfo
- Publication number
- JPS57162340A JPS57162340A JP4625681A JP4625681A JPS57162340A JP S57162340 A JPS57162340 A JP S57162340A JP 4625681 A JP4625681 A JP 4625681A JP 4625681 A JP4625681 A JP 4625681A JP S57162340 A JPS57162340 A JP S57162340A
- Authority
- JP
- Japan
- Prior art keywords
- flash
- silicon semiconductor
- emitting
- under
- reflectivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To enable the completion of a preferable annealing with doping efficiency being higher than 45% by maintaining the preliminarily heating temperature, reflectivity, pulse width and emitting energy in a special relationship, thereby emitting flash from a flash discharge lamp. CONSTITUTION:When a silicon semiconductor 6 preliminarily heated in advance to a temperature TA deg.C is annealed by flash emission from a flash discharge lamp 3, under the conditions of maintaining the relationship that (t) falls in the range of 70<=t<=780, where R represents the reflectivity of the silicon semiconductor, (t) microsecond represents the pulse width (1/2 wave amplitude) of the flash light, and E joule/cm<2> represents the emitting intension on the silicon semiconductor and 2.3X10<-3>t<0.27=(1-R)E/(1,410-TA)<=3.8X10<-3>t<0.28> is maintained. For example, a plurality of flash discharge lamps 3 are intimately contacted in zigzag shape in a light source, a plane mirror 4 is disposed on the light source, a specimen base 5 is disposed capable of preliminarily heating with a heater under the mirror in an annealing furnace, and the semiconductor is annealed under the above conditions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4625681A JPS57162340A (en) | 1981-03-31 | 1981-03-31 | Annealing method for silicon semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4625681A JPS57162340A (en) | 1981-03-31 | 1981-03-31 | Annealing method for silicon semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57162340A true JPS57162340A (en) | 1982-10-06 |
Family
ID=12742100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4625681A Pending JPS57162340A (en) | 1981-03-31 | 1981-03-31 | Annealing method for silicon semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57162340A (en) |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02309629A (en) * | 1989-05-24 | 1990-12-25 | Sony Corp | Lamp annealing method and lamp annealing device used therefor |
| US6856762B2 (en) | 2002-08-21 | 2005-02-15 | Dainippon Screen Mfg. Co., Ltd. | Light irradiation type thermal processing apparatus |
| US6859616B2 (en) | 2002-12-05 | 2005-02-22 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for and method of heat treatment by light irradiation |
| US6885815B2 (en) | 2002-07-17 | 2005-04-26 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus performing irradiating a substrate with light |
| US6897130B2 (en) | 2001-12-13 | 2005-05-24 | Ushio Denki Kabushiki Kaisya | Method for thermal processing semiconductor wafer with a flash discharge lamp after preheating to a predetermined temperature |
| US6936797B2 (en) | 2002-06-25 | 2005-08-30 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing method and thermal processing apparatus for substrate employing photoirradiation |
| US6998580B2 (en) | 2002-03-28 | 2006-02-14 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
| US7034255B2 (en) | 2003-04-16 | 2006-04-25 | Dainippon Screen Mfg., Co. Ltd. | Light irradiation type thermal processing apparatus |
| US7041939B2 (en) | 2003-12-01 | 2006-05-09 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
| US7062161B2 (en) | 2002-11-28 | 2006-06-13 | Dainippon Screen Mfg. Co., Ltd. | Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor |
| US7068926B2 (en) | 2003-08-26 | 2006-06-27 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus of light-emission type and method of cleaning same |
| US7072579B2 (en) | 2003-05-21 | 2006-07-04 | Dainippon Screen Mfg. Co., Ltd. | Light irradiation type thermal processing apparatus and method of adjusting light irradiation intensity |
| US7091453B2 (en) | 2003-02-27 | 2006-08-15 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus by means of light irradiation |
| US7230709B2 (en) | 2003-06-30 | 2007-06-12 | Dainippon Screen Mfg. Co., Ltd. | Measuring method and measuring apparatus of optical energy absorption ratio, and thermal processing apparatus |
| US7255899B2 (en) * | 2001-11-12 | 2007-08-14 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and heat treatment method of substrate |
| US7327947B2 (en) | 2001-10-29 | 2008-02-05 | Dainippon Screen Mfg. Co., Ltd. | Heat treating apparatus and method |
| WO2008139361A1 (en) * | 2007-05-09 | 2008-11-20 | Philips Intellectual Property & Standards Gmbh | Method and system for rapid thermal processing |
| US7935913B2 (en) | 2003-09-18 | 2011-05-03 | Dainippon Screen Mfg. Co., Ltd. | Apparatus and method for thermal processing of substrate |
-
1981
- 1981-03-31 JP JP4625681A patent/JPS57162340A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| APPLIED PHYSICS LETTERS * |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02309629A (en) * | 1989-05-24 | 1990-12-25 | Sony Corp | Lamp annealing method and lamp annealing device used therefor |
| US7327947B2 (en) | 2001-10-29 | 2008-02-05 | Dainippon Screen Mfg. Co., Ltd. | Heat treating apparatus and method |
| US7255899B2 (en) * | 2001-11-12 | 2007-08-14 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus and heat treatment method of substrate |
| CN1294632C (en) * | 2001-12-13 | 2007-01-10 | 优志旺电机株式会社 | Heat treating method for semiconductor crystal wafers |
| US6897130B2 (en) | 2001-12-13 | 2005-05-24 | Ushio Denki Kabushiki Kaisya | Method for thermal processing semiconductor wafer with a flash discharge lamp after preheating to a predetermined temperature |
| US7381928B2 (en) | 2002-03-28 | 2008-06-03 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
| US6998580B2 (en) | 2002-03-28 | 2006-02-14 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
| US6936797B2 (en) | 2002-06-25 | 2005-08-30 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing method and thermal processing apparatus for substrate employing photoirradiation |
| US6885815B2 (en) | 2002-07-17 | 2005-04-26 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus performing irradiating a substrate with light |
| US6856762B2 (en) | 2002-08-21 | 2005-02-15 | Dainippon Screen Mfg. Co., Ltd. | Light irradiation type thermal processing apparatus |
| US7062161B2 (en) | 2002-11-28 | 2006-06-13 | Dainippon Screen Mfg. Co., Ltd. | Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor |
| US6859616B2 (en) | 2002-12-05 | 2005-02-22 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for and method of heat treatment by light irradiation |
| US7091453B2 (en) | 2003-02-27 | 2006-08-15 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus by means of light irradiation |
| US7034255B2 (en) | 2003-04-16 | 2006-04-25 | Dainippon Screen Mfg., Co. Ltd. | Light irradiation type thermal processing apparatus |
| US7072579B2 (en) | 2003-05-21 | 2006-07-04 | Dainippon Screen Mfg. Co., Ltd. | Light irradiation type thermal processing apparatus and method of adjusting light irradiation intensity |
| US7230709B2 (en) | 2003-06-30 | 2007-06-12 | Dainippon Screen Mfg. Co., Ltd. | Measuring method and measuring apparatus of optical energy absorption ratio, and thermal processing apparatus |
| US7068926B2 (en) | 2003-08-26 | 2006-06-27 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment apparatus of light-emission type and method of cleaning same |
| US7935913B2 (en) | 2003-09-18 | 2011-05-03 | Dainippon Screen Mfg. Co., Ltd. | Apparatus and method for thermal processing of substrate |
| US7041939B2 (en) | 2003-12-01 | 2006-05-09 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
| WO2008139361A1 (en) * | 2007-05-09 | 2008-11-20 | Philips Intellectual Property & Standards Gmbh | Method and system for rapid thermal processing |
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