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JPS55103722A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS55103722A
JPS55103722A JP964679A JP964679A JPS55103722A JP S55103722 A JPS55103722 A JP S55103722A JP 964679 A JP964679 A JP 964679A JP 964679 A JP964679 A JP 964679A JP S55103722 A JPS55103722 A JP S55103722A
Authority
JP
Japan
Prior art keywords
light
discharge lamp
pattern forming
flash
flash discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP964679A
Other languages
Japanese (ja)
Inventor
Tatsumi Hiramoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP964679A priority Critical patent/JPS55103722A/en
Publication of JPS55103722A publication Critical patent/JPS55103722A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To perform minute pattern forming without diffraction phenomenon as well with little heat radiation, by using as ultraviolet rays irradiating source, flash discharge lamp which is cold light source and by which planned quantity of light in full amount is available instantaneously, in case of extreme minute processing method for super LSI.
CONSTITUTION: Silicon wafer is coated with polybutane-1 sulfon PBS of photosensitive character 1849Å, at a thickness of 1μm. From flash discharge lamp filled with xenon gas, flash light in pulse width wherein t=20μs, J=48 joule, i.e. selected in Q=41 is irradiated onto the above mentioned light sensitive substance PBS via photomask and is exposed. After this, by washing with solvent, unnecessary part is removed and required pattern is formed.
COPYRIGHT: (C)1980,JPO&Japio
JP964679A 1979-02-01 1979-02-01 Pattern forming method Pending JPS55103722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP964679A JPS55103722A (en) 1979-02-01 1979-02-01 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP964679A JPS55103722A (en) 1979-02-01 1979-02-01 Pattern forming method

Publications (1)

Publication Number Publication Date
JPS55103722A true JPS55103722A (en) 1980-08-08

Family

ID=11725975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP964679A Pending JPS55103722A (en) 1979-02-01 1979-02-01 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS55103722A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4548688A (en) * 1983-05-23 1985-10-22 Fusion Semiconductor Systems Hardening of photoresist
US7255899B2 (en) * 2001-11-12 2007-08-14 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus and heat treatment method of substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5335385A (en) * 1976-09-13 1978-04-01 Nippon Telegr & Teleph Corp <Ntt> Lighting device
JPS544076A (en) * 1977-06-13 1979-01-12 Nippon Telegr & Teleph Corp <Ntt> Irradiation unit for far ultraviolet ray exposure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5335385A (en) * 1976-09-13 1978-04-01 Nippon Telegr & Teleph Corp <Ntt> Lighting device
JPS544076A (en) * 1977-06-13 1979-01-12 Nippon Telegr & Teleph Corp <Ntt> Irradiation unit for far ultraviolet ray exposure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4548688A (en) * 1983-05-23 1985-10-22 Fusion Semiconductor Systems Hardening of photoresist
US7255899B2 (en) * 2001-11-12 2007-08-14 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus and heat treatment method of substrate

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