JP2019070750A - Display device - Google Patents

Abstract

A display device capable of high definition is provided. A switching element, an organic insulating film covering the switching element, a transparent conductive film in contact with the organic insulating film, a reflective film disposed on the transparent conductive film, the reflective film, and the transparent conductive film A capacitive insulating film covering the film; a pixel electrode disposed on the capacitive insulating film and electrically connected to the switching element; an electrophoretic element disposed on the pixel electrode; and the electrophoretic element And a common electrode disposed on the display device. [Selection] Figure 3

Description

  Embodiments of the present invention relate to a display device.

  In one example, an electrophoretic display device is disclosed in which an electrophoretic element in which microcapsules are arranged is sandwiched between an element substrate and an opposing substrate. Since this type of electrophoretic display has a memory property, it is not necessary to always apply a voltage to maintain the display state. On the other hand, the electrophoretic display device needs to have a pixel capacity in order to hold the voltage in each pixel for a fixed period. Such a pixel capacitor is formed of, for example, a pixel capacitor electrode made of a light shielding metal film, a protective film, and a pixel electrode.

JP, 2011-221097, A

  An object of the present embodiment is to provide a display device capable of achieving high definition.

  According to this embodiment, a switching element, an organic insulating film covering the switching element, a transparent conductive film in contact with the organic insulating film, a reflective film disposed on the transparent conductive film, the reflective film, A capacitive insulating film covering the transparent conductive film; a pixel electrode disposed on the capacitive insulating film and electrically connected to the switching element; an electrophoretic element disposed on the pixel electrode; And a common electrode disposed on the electrophoretic element.

FIG. 1 is a plan view showing a configuration example of a display device of the present embodiment. FIG. 2 is a plan view showing a pixel of the display shown in FIG. FIG. 3 is a cross-sectional view of the pixel shown in FIG. 2 taken along the line A-A '. FIG. 4 is a cross-sectional view taken along the line B-B 'intersecting the source line of the pixel shown in FIG. FIG. 5 is a cross-sectional view taken along the line C-C 'intersecting the gate line of the pixel shown in FIG. FIG. 6 is a plan view showing a modification of the pixel of the display shown in FIG. FIG. 7 is a cross-sectional view taken along the line D-D 'intersecting the gate line of the pixel shown in FIG. FIG. 8 is a cross-sectional view showing a modification of the pixel shown in FIG. 2 along the line A-A '. FIG. 9 is a plan view showing a modification of the pixel of the display shown in FIG. FIG. 10 is a plan view showing the position of the transparent conductive film in the pixel shown in FIG. FIG. 11 is a cross-sectional view taken along the line E-E 'intersecting the source line of the pixel shown in FIG. FIG. 12 is a plan view showing the positional relationship between the first transparent conductive film and the second transparent conductive film shown in FIG.

  Hereinafter, the present embodiment will be described with reference to the drawings. The disclosure is merely an example, and it is naturally included within the scope of the present invention as to what can be easily conceived of by those skilled in the art as to appropriate changes while maintaining the gist of the invention. In addition, the drawings may be schematically represented as to the width, thickness, shape, etc. of each portion as compared with the actual embodiment in order to clarify the description, but this is merely an example, and the present invention It does not limit the interpretation. In the specification and the drawings, components having the same or similar functions as those described above with reference to the drawings already described may be denoted by the same reference symbols, and overlapping detailed descriptions may be omitted as appropriate. .

FIG. 1 is a plan view showing a configuration example of a display device DSP of the present embodiment.
In the drawing, the first direction X and the second direction Y are directions intersecting each other, and the third direction Z is a direction intersecting the first direction X and the second direction Y. In one example, the first direction X, the second direction Y, and the third direction Z are orthogonal to each other, but may intersect each other at an angle other than 90 degrees. In the present specification, the direction toward the tip of the arrow indicating the third direction Z is referred to as upper (or simply upward), and the direction from the tip of the arrow to the reverse is referred to as downward (or simply downward). In addition, it is assumed that there is an observation position for observing the display device DSP on the tip end side of the arrow indicating the third direction Z, and from this observation position toward the XY plane defined in the first direction X and the second direction Y. It is called a plan view to look at.

  The display device DSP includes a first substrate SUB1 and a second substrate SUB2. The display device DSP includes a display unit DA for displaying an image, and a non-display unit NDA around the display unit DA. The non-display portion NDA is formed in a frame shape. The display unit DA is located in a region where the first substrate SUB1 and the second substrate SUB2 overlap in plan view. The display unit DA includes a plurality of pixels PX arranged in a matrix.

FIG. 2 is a plan view showing the pixel PX of the display device DSP shown in FIG.
Here, among the pixels PX, only main elements included in the first substrate SUB1 shown in FIG. 1 are illustrated. The pixel PX includes a switching element SW, a reflective film M, a pixel electrode PE, and a transparent conductive film TE.

  The switching element SW includes gate electrodes GE1 and GE2, a semiconductor layer SC, a source electrode SE, and a drain electrode DE. The illustrated switching element SW has a double gate structure, but may have a single gate structure. The switching element SW may have a top gate structure in which the gate electrodes GE1 and GE2 are disposed on the semiconductor layer SC, or a bottom gate structure in which the gate electrodes GE1 and GE2 are disposed below the semiconductor layer SC. It may be

  The semiconductor layer SC is electrically connected to the source line S1 through the contact hole CH1 at one end portion SCA, and is electrically connected to the drain electrode DE through the contact hole CH2 at the other end portion SCB. The semiconductor layer SC intersects with the gate line G1 between the one end portion SCA and the other end portion SCB.

  The gate electrodes GE1 and GE2 correspond to regions overlapping the semiconductor layer SC in the gate line G1. In the illustrated example, the gate line G1 extends along the first direction X and crosses the central portion of the pixel PX. Source electrode SE includes a region of source line S1 in contact with semiconductor layer SC. In the illustrated example, the source line S1 extends along the second direction Y and is located at the left end of the pixel PX. The drain electrode DE is formed in an island shape and is disposed between the source lines S1 and S2.

  The reflective film M overlaps the pixel electrode PE, the transparent conductive film TE, the switching element SW, the gate line G1, and the source line S1 in the pixel PX. The reflective film M is formed in an island shape in each pixel PX. The reflective film M further includes side surfaces ME1 and ME2 extending in the second direction Y, and side surfaces ME3 and ME4 extending in the first direction X. In the illustrated example, the reflective film M has a square shape in which the lengths of the side surfaces ME1 and ME2 in the second direction Y are equal to the lengths of the side surfaces ME3 and ME4 in the first direction X. The reflective film M may have a rectangular shape extending in the first direction X or the second direction Y, or may have another polygonal shape.

  The transparent conductive film TE overlaps with the plurality of pixels PX aligned in the first direction X and the second direction Y, and overlaps with both the gate line G1 and the source line S1. The transparent conductive film TE is formed over substantially the entire area of the display portion DA shown in FIG. The transparent conductive film TE is supplied with a common potential, for example, in the non-display area NDA. The transparent conductive film TE and the reflective film M have an opening OP at a position overlapping the drain electrode DE in each pixel PX. The opening OP is connected to the switching element SW.

  The pixel electrode PE overlaps the transparent conductive film TE, the reflective film M, the switching element SW, the gate line G1, and the source line S1 in the pixel PX. The pixel electrode PE is electrically connected to the drain electrode DE through the contact hole CH3 and the opening OP. In the illustrated example, the pixel electrode PE is formed in a square shape in which the length along the first direction X and the length along the second direction Y are equal, but the invention is not limited to this example. The pixel electrode PE may have a rectangular shape extending in the first direction X or the second direction Y, or may have another polygonal shape. In the illustrated example, the pixel electrode PE and the reflective film M have substantially the same area and the same shape, but the area of the pixel electrode PE and the area of the reflective film M may be different from each other.

  The portion where the pixel electrode PE and the transparent conductive film TE overlap in plan view corresponds to the pixel capacitance of each pixel PX. In the illustrated example, since the transparent conductive film TE is formed over substantially the entire surface of the pixel PX, substantially the entire region where the pixel electrode PE is formed overlaps the transparent conductive film TE to form a pixel capacitance. There is.

FIG. 3 is a cross-sectional view of the pixel PX shown in FIG. 2 along the line AA '.
The first substrate SUB1 and the second substrate SUB2 are bonded by an adhesive layer 40. In the illustrated cross section, the observation position of the display device DSP is assumed to be above the second substrate SUB2. The first substrate SUB1 includes the base material 10, the insulating films 11 to 13, the switching element SW, the transparent conductive film TE, the reflective film M, the capacitive insulating film 14, and the pixel electrode PE.

  The base 10 is formed of insulating glass, resin or the like. The substrate 10 may be opaque because it is located on the opposite side of the observation position. The gate electrodes GE1 and GE2 integrated with the gate line G1 are located on the base 10 and covered with the insulating film 11. The gate line G1 and the gate electrodes GE1 and GE2 are metal materials such as aluminum (Al), titanium (Ti), silver (Ag), molybdenum (Mo), tungsten (W), copper (Cu), chromium (Cr) or the like A single layer structure may be formed by an alloy or the like in which these metal materials are combined, and may be a laminated structure.

  The semiconductor layer SC is located on the insulating film 11 and covered with the insulating film 12. The semiconductor layer SC is formed of, for example, polycrystalline silicon, but may be formed of amorphous silicon or an oxide semiconductor. The source electrode SE and the drain electrode DE which are integrated with the source line S1 are located on the insulating film 12 and covered with the insulating film 13. That is, the switching element SW is covered by the insulating film 13. The source line S1, the source electrode SE, and the drain electrode DE are formed of the same material, and are formed of, for example, the above-described metal material. The source electrode SE is in contact with the semiconductor layer SC through the contact hole CH1 penetrating the insulating film 12. The drain electrode DE is in contact with the semiconductor layer SC through the contact hole CH2 penetrating the insulating film 12.

  The transparent conductive film TE is disposed on the insulating film 13 and in contact with the insulating film 13. The transparent conductive film TE functions as a capacitance electrode for securing a pixel capacitance. The transparent conductive film TE is formed of, for example, a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

  The reflective film M is disposed on the transparent conductive film TE. The reflective film M functions as, for example, a reflective film that reflects incident light from the second substrate SUB2 side, and also functions as a light shielding film that blocks light traveling from the second substrate SUB2 side to the switching element SW. The reflective film M is formed of, for example, a metal material such as aluminum. As a specific example, the reflective film M is formed of a stacked body of aluminum and titanium, a stacked body of aluminum and molybdenum, or the like. As illustrated, since the reflective film M is in contact with the transparent conductive film TE, the reflective film M and the transparent conductive film TE are electrically connected. The reflective film M is supplied with, for example, a common potential by being in contact with the transparent conductive film TE. The reflective film M and the transparent conductive film TE are covered with a capacitive insulating film 14. The reflective film M has a side surface ME5 in a forward tapered shape at the opening OP. As shown in a partially enlarged view in FIG. 3, an angle θ between the side surface ME5 facing the opening OP of the reflective film M and the transparent conductive film TE is an acute angle.

  The pixel electrode PE is located on the capacitive insulating film 14. The pixel electrode PE is formed of, for example, a transparent conductive material such as ITO or IZO. The pixel electrode PE is opposed to the transparent conductive film TE via the capacitive insulating film 14. The pixel electrode PE is electrically connected to the switching element SW through a contact hole CH3 penetrating the insulating film 13 and the capacitive insulating film 14 at a position overlapping the opening OP. When the contact hole CH3 is formed, the insulating film 13 and the capacitive insulating film 14 may be etched at once, or after the insulating film 13 is etched, the capacitive insulating film 14 may be etched. When the insulating film 13 and the capacitive insulating film 14 are collectively etched, as illustrated, the capacitive insulating film 14 does not cover the end of the insulating film 13 and the end of the insulating film 13 and the capacitive insulating film 14 It becomes an almost uniform cross section.

  In the present embodiment, each of the insulating films 11 and 12 and the capacitive insulating film 14 is formed of an inorganic insulating material such as silicon oxide (SiO), silicon nitride (SiN), or silicon oxynitride (SiON). ing. Each of the insulating films 11 and 12 and the capacitive insulating film 14 may have a single-layer structure or a stacked structure. The capacitive insulating film 14 corresponds to a capacitive insulating film interposed between the transparent conductive film TE and the pixel electrode PE. In one example, the capacitive insulating film 14 is formed of silicon nitride. The insulating film 13 is formed of an organic insulating material.

  The second substrate SUB2 includes a base 20, a common electrode CE, and the electrophoretic element 21. The base 20 is formed of insulating glass, resin or the like. The substrate 20 is transparent because it is located on the observation position side. The common electrode CE is disposed on the electrophoretic element 21. The common electrode CE is a transparent electrode formed of a transparent conductive material such as ITO or IZO. The common electrode CE is formed over substantially the entire area of the display unit DA shown in FIG. The common electrode CE is supplied with a common potential, for example, in the non-display area NDA. The electrophoretic element 21 is disposed on the pixel electrode PE. The electrophoretic element 21 is formed of a plurality of microcapsules 30 arranged almost without gaps. The adhesive layer 40 is located between the pixel electrode PE and the electrophoretic element 21.

  The microcapsules 30 are spherical bodies having a particle diameter of, for example, about 50 μm to 100 μm. In the illustrated example, a large number of microcapsules 30 are disposed between one pixel electrode PE and the common electrode CE due to the scale, but a square shape having a side length of about several hundred μm About one to ten microcapsules 30 are disposed in the pixel PX.

  The microcapsules 30 include a dispersion medium 31, a plurality of black particles 32, and a plurality of white particles 33. The black particles 32 and the white particles 33 may be referred to as electrophoretic particles. The outer shell (wall film) 34 of the microcapsule 30 is formed using, for example, a transparent resin such as an acrylic resin. The dispersion medium 31 is a liquid in which the black particles 32 and the white particles 33 are dispersed in the microcapsules 30. The black particles 32 are, for example, particles (polymer or colloid) made of a black pigment such as aniline black, and are, for example, positively charged. The white particles 33 are, for example, particles (polymer or colloid) made of a white pigment such as titanium dioxide, and are negatively charged, for example. Various additives can be added to these pigments as required. Further, instead of the black particles 32 and the white particles 33, for example, pigments such as red, green, blue, yellow, cyan and magenta may be used.

  In the electrophoretic element 21 configured as described above, when displaying the pixel PX in black, the pixel electrode PE is held at a relatively higher potential than the common electrode CE. That is, when the potential of the common electrode CE is set to the reference potential, the pixel electrode PE is held at the positive polarity. Thus, the positively charged black particles 32 are attracted to the common electrode CE, while the negatively charged white particles 33 are attracted to the pixel electrode PE. As a result, when the pixel PX is observed from the common electrode CE side, black is visually recognized. On the other hand, in the case of displaying the pixel PX in white, the pixel electrode PE is held in the negative polarity when the potential of the common electrode CE is set to the reference potential. As a result, the negatively charged white particles 33 are attracted to the common electrode CE side, while the positively charged black particles 32 are attracted to the pixel electrode PE. As a result, when the pixel PX is observed, white is visually recognized.

FIG. 4 is a cross-sectional view taken along the line BB ′ intersecting the source line S1 of the pixel PX shown in FIG.
The side surfaces ME1 and ME2 of the reflective film M are in contact with the transparent conductive film TE and covered with the capacitive insulating film 14. The side surfaces ME1 and ME2 are similarly forward tapered as the side surface ME5 described above. That is, the angle θ1 between the side surface ME1 and the transparent conductive film TE and the angle θ2 between the side surface ME2 and the transparent conductive film TE are both acute angles. The reflective film M is disposed at a position overlapping the pixel electrode PE in the third direction Z. In the illustrated example, the width along the first direction X of the reflective film M is equal to the width along the first direction X of the pixel electrode PE, but the width along the first direction X of the reflective film M Can be set independently of the width along the first direction X of the pixel electrode PE in consideration of the reflectance and the like. Therefore, the width of the reflective film M may be smaller or larger than the width of the pixel electrode PE.

FIG. 5 is a cross-sectional view taken along the line CC ′ intersecting the gate line G1 of the pixel PX shown in FIG.
The end portions ME3 and ME4 of the reflective film M are in contact with the transparent conductive film TE and covered with the capacitive insulating film 14. The side surfaces ME3 and ME4 are normally tapered similarly to the above-described side surface ME5. That is, the angle θ3 between the side surface ME3 and the transparent conductive film TE and the angle θ4 between the side surface ME4 and the transparent conductive film TE are both acute angles. The reflective film M is disposed at a position overlapping the pixel electrode PE in the third direction Z. In the illustrated example, the width along the second direction Y of the reflective film M is equal to the width along the second direction Y of the pixel electrode PE, but the width along the second direction Y of the reflective film M May be smaller than the width along the second direction Y of the pixel electrode PE.

  According to the present embodiment, the transparent conductive film TE is disposed between the reflective film M and the insulating film 13. The adhesion between the transparent conductive film TE formed of ITO and the reflective film M formed of a metal material is higher than the adhesion of the insulating film 13 formed of an organic insulating material and the reflective film M. Therefore, in the configuration of the present embodiment, the formation of the reflection film M is inhibited from being disturbed in the shapes of the side surfaces ME1 to ME5 as compared to the case where the reflection film M is formed on the insulating film 13. Can. By forming the reflective film M on the transparent conductive film TE, for example, the side surfaces ME1 to ME5 in the forward tapered shape as described above can be formed. By forming the side surfaces ME1 to ME5 in a forward tapered shape, the coverage of the capacitive insulating film 14 can be improved. Therefore, even when the film thickness of the capacitive insulating film 14 is reduced, generation of film breakage of the capacitive insulating film 14 can be suppressed, and a short circuit between the pixel electrode PE and the reflective film M can be suppressed. it can. Further, by reducing the film thickness of the capacitive insulating film 14, the pixel capacitance formed by the pixel electrode PE and the transparent conductive film TE can be increased without changing the overlapping area of the pixel electrode PE and the transparent conductive film TE. Can. Therefore, high definition can be achieved.

  Also, for example, when the pixel capacitance is formed by the pixel electrode PE and the reflective film M, if the area of the reflective film M is changed, the pixel capacitance is also changed. Was difficult. In the present embodiment, since the pixel capacitance is formed between the pixel electrode PE and the transparent conductive film TE, it affects the pixel capacitance even if the reflectance is adjusted by changing the area of the reflective film M. Instead, desired reflectance and pixel capacitance can be obtained.

  In addition, the transparent conductive film TE has lower moisture permeability than the insulating film 13. Therefore, compared to the case where the reflective film M is in contact with the insulating film 13, corrosion of the reflective film M can be suppressed.

FIG. 6 is a plan view showing a modification of the pixel PX of the display device DSP shown in FIG. 6 is different from the configuration shown in FIG. 2 in that the area of the reflective film M is different from the area of the pixel electrode PE in a plan view.
That is, the width along the first direction X of the reflective film M is smaller than the width along the first direction X of the pixel electrode PE. The width of the reflective film M in the second direction Y is smaller than the width of the pixel electrode PE in the second direction Y. The entire area of the reflective film M overlaps the pixel electrode PE in plan view.

FIG. 7 is a cross-sectional view taken along the line DD 'intersecting the gate line G1 of the pixel PX shown in FIG.
The capacitive insulating film 14 is in contact with the transparent conductive film TE at a position overlapping with the pixel electrode PE. Thus, by changing the area of the reflective film M, it is possible to adjust the reflectance. Further, as described above, since the pixel capacitance is formed by the transparent conductive film TE and the pixel electrode PE, changing the area of the reflective film M does not affect the pixel capacitance. Therefore, the area of the reflective film M can be freely changed.
Also in such a modification, the same effect as described above can be obtained.

FIG. 8 is a cross-sectional view showing a modification of the pixel PX shown in FIG. 2 along the line AA '. FIG. 8 is different from the configuration shown in FIG. 3 in that the first substrate SUB1 has an island portion IS disposed in the contact hole CH3.
The island portion IS is in contact with the drain electrode DE, the capacitive insulating film 14 and the pixel electrode PE. The island portion IS electrically connects the drain electrode DE and the pixel electrode PE. The island portion IS is formed of the same material as the transparent conductive film TE, and is formed of, for example, ITO or IZO. The island portion IS is separated from the transparent conductive film TE and is electrically insulated from each other. When forming the reflective film M, after patterning the transparent conductive film TE, a metal film is formed on the transparent conductive film TE, and the reflective film M is formed by patterning the metal film. As illustrated, by arranging the island portion IS in the contact hole CH3, it is possible to suppress the damage to the drain electrode DE by the etching at the time of forming the reflective film M.

FIG. 9 is a plan view showing a modification of the pixel PX of the display device DSP shown in FIG. FIG. 9 is different from the configuration shown in FIG. 2 in that the reflective film M includes the first reflective film M1 and the second reflective film M2.
The first reflective film M1 overlaps the pixel electrode PE. The second reflective film M2 overlaps the pixel electrode PE and the source line S1. The second reflective film M2 is electrically connected to the source line S1 via the contact hole CH4, and extends in the second direction Y along the source line S1. The first reflective film M1 and the second reflective film M2 are spaced apart from each other and arranged at different positions in plan view. By electrically connecting the source line S and the second reflective film M2 formed of a metal material, the resistance of the source line S can be reduced. A plurality of contact holes CH4 electrically connecting the second reflective film M2 and the source line S may be formed for the pair of second reflective film M2 and the source line S.

FIG. 10 is a plan view showing the position of the transparent conductive film TE in the pixel PX shown in FIG. FIG. 10 is different from the configuration shown in FIG. 2 in that the transparent conductive film TE includes the first transparent conductive film TE1 and the second transparent conductive film TE2.
The first transparent conductive film TE1 overlaps the pixel electrode PE. The second transparent conductive film TE2 overlaps the pixel electrode PE and the source line S1, and extends in the second direction Y along the source line S1. The first transparent conductive film TE <b> 1 and the second transparent conductive film TE <b> 2 are separated from each other and arranged at different positions in plan view.

FIG. 11 is a cross-sectional view of the pixel PX shown in FIG. 9 and FIG. 10 along the line EE 'intersecting the source line S1.
The first reflective film M1 is in contact with the first transparent conductive film TE1. The second reflective film M2 is in contact with the second transparent conductive film TE2. A slit SL is formed between the first transparent conductive film TE1 and the second transparent conductive film TE2. The capacitive insulating film 14 is in contact with the insulating film 13 at the slit SL. The second reflective film M2 is electrically connected to the source line S1 via a contact hole CH4 penetrating the second transparent conductive film TE2 and the insulating film 13. The pixel electrode PE overlaps the first transparent conductive film TE1, the second transparent conductive film TE2, the first reflective film M1, the second reflective film M2, and the slit SL.

  For example, a common potential is supplied to the first transparent conductive film TE1 in the non-display area NDA. Since the first reflective film M1 is in contact with the first transparent conductive film TE1, a common potential is supplied. Since the second reflective film M2 is connected to the source line S1, it has the same potential as the source line S1. Since the second transparent conductive film TE2 is in contact with the second reflective film M2, it has the same potential as the source line S1.

FIG. 12 is a plan view showing the positional relationship between the first transparent conductive film TE1 and the second transparent conductive film TE2 shown in FIG.
The first transparent conductive films TE1 and the second transparent conductive films TE2 are alternately arranged along the first direction X. The first transparent conductive film TE1 and the second transparent conductive film TE2 extend along the second direction Y in the display unit DA. The second transparent conductive film TE <b> 2 overlaps the source line S extending along the second direction Y.

  The non-display portion NDA has a first area NDA1 and a second area NDA2 extending in the second direction Y, and a third area NDA3 and a fourth area NDA4 extending in the first direction X. The first transparent conductive film TE1 is connected to the drive unit 2 by the wiring WR. The wiring WR connected to the odd first transparent conductive film TE1 from the left is connected to the first transparent conductive film TE1 in the third region NDA3. The wiring WR connected to the first transparent conductive film TE1 in the third area NDA3 is connected to the drive unit 2 through the first area NDA1 and the second area NDA2. The wiring WR connected to the even-numbered first transparent conductive film TE1 from the left is connected to the first transparent conductive film TE1 in the fourth region NDA4. According to such a layout, the arrangement of the wirings WR can be dispersed, which is suitable for narrowing the frame.

  As described above, according to the present embodiment, it is possible to obtain a display device capable of achieving high definition.

  While certain embodiments of the present invention have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and the gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DSP: display device, SW: switching element, 13: insulating film, 14: capacitance insulating film,
PE: pixel electrode 21: electrophoresis element CE: common electrode IS: island
M: reflection film, M1: first reflection film, M2: second reflection film,
TE: transparent conductive film, TE1: first transparent conductive film, TE2: second transparent conductive film.

Claims (6)

A switching element,
An organic insulating film covering the switching element;
A transparent conductive film in contact with the organic insulating film;
A reflective film disposed on the transparent conductive film;
A capacitive insulating film covering the reflective film and the transparent conductive film;
A pixel electrode disposed on the capacitive insulating film and electrically connected to the switching element;
An electrophoretic element disposed on the pixel electrode;
A common electrode disposed on the electrophoretic element.   The display device according to claim 1, wherein the side surface of the reflective film is in a forward tapered shape.   The display device according to claim 1, wherein an area of the reflective film is different from an area of the pixel electrode in a plan view. The pixel electrode is electrically connected to the switching element through a contact hole penetrating the organic insulating film.
It is disposed in the contact hole and has an island part of the same material as the transparent conductive film,
The display device according to any one of claims 1 to 3, wherein the transparent conductive film and the island portion are electrically insulated. Furthermore, a source line electrically connected to the switching element,
The said reflective film is provided with the 1st reflective film which overlaps with the said pixel electrode, and the 2nd reflective film electrically connected with the said source line, and arrange | positioned along the said source line. Or the display device according to item 1. The transparent conductive film is a first transparent conductive film overlapping with the pixel electrode.
The display device according to claim 5, further comprising: a second transparent conductive film overlapping the source line.

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