JP2003031561A - Substrate treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of heat treating under optimum conditions, according to various types of insulating film materials. SOLUTION: The substrate treatment apparatus comprises processing chambers 45 and 46 connected to first heat treat and to second heat treat divided into two steps from heat treating in the same low-oxygen atmosphere, further temperature regulators 54, 55 and a controller 60 for enabling heat treatment under optimum conditions corresponding to various types of insulation films such as, for example, a high permittivity film, a low permittivity film, or an organic film, an inorganic film or the like as a material of an interlayer insulating film, at variable heating temperature and oxygen concentration. The apparatus can also heat treat under optimum conditions, corresponding to a novel insulating film material to be developed in future.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for performing a baking process or a curing process on a semiconductor wafer substrate coated with an insulating film material.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process, for example, SOD (Spin on Dielectric) is used.
The system forms an interlayer insulating film. This SOD
In the system, a semiconductor wafer (hereinafter referred to as “wafer”) is spin-coated with a coating film and subjected to physical treatment such as heating or chemical treatment to form an interlayer insulating film.

For example, when forming an interlayer insulating film of a siloxane polymer or an organic polymer, a material diluted with an organic solvent is discharged onto a wafer and applied by a spin coater. Next, heat treatment or the like is performed stepwise in an environment suitable for the purpose. Further, depending on the material, it may be necessary to add a chemical treatment such as a treatment in an ammonia atmosphere or a solvent replacement treatment after the coating.

By the way, in recent years, an interlayer insulating film material such as an organic material or an inorganic material having a low dielectric constant or a high dielectric constant is used as a material for the interlayer insulating film, and these are laminated to form a metal wiring. Since the insulating layer is formed, it is becoming necessary to perform the heat treatment at the optimum temperature and oxygen concentration according to each insulating film material.

[0005]

However, in the heat treatment using the current baking apparatus and curing apparatus, it is not possible to precisely control the temperature and oxygen concentration.
It is difficult to perform heat treatment in an optimum environment according to such various insulating film materials.

There is also a strong demand for heat treatment under optimal conditions in response to new insulating film materials that will be developed in the future.

In view of the above circumstances, it is an object of the present invention to provide a substrate processing apparatus capable of performing heat treatment under optimum conditions according to various kinds of insulating film materials.

[0008]

To achieve the above object, a first aspect of the present invention is to subject a substrate coated with an insulating film material to heat treatment at a first oxygen concentration and at a first temperature. And a second processing unit which is provided adjacent to the first processing unit and is coated with the insulating film material under a second oxygen concentration different from the first oxygen concentration and First
A second processing unit that performs heat treatment at a second temperature different from the above temperature, and a first transfer unit that transfers the substrate between the first processing unit and the second processing unit. To do.

According to one aspect of the present invention, the heat treatment in the first treatment section and the heat treatment in the second treatment section are continuously performed.

According to one aspect of the present invention, it further comprises concentration varying means for varying the first oxygen concentration and the second oxygen concentration.

According to one aspect of the present invention, it further comprises means for varying the first temperature and the second temperature.

According to one aspect of the present invention, the first oxygen concentration and the second oxygen concentration are 1000 ppm or less.

According to such a configuration, for example, the heat treatment in the same low oxygen atmosphere is divided into two stages of the first heat treatment and the second heat treatment, and the treatment chambers for performing the respective treatments are adjacent to each other. In this way, the heating temperature and the oxygen concentration in each treatment are made variable so that, for example, an organic film or an inorganic film having a high dielectric constant or a low dielectric constant as a material of the interlayer insulating film. For example, the heat treatment can be performed under optimum conditions corresponding to various insulating films. It is possible to perform the heat treatment under the optimum conditions corresponding to the new insulating film material that will be developed in the future. In this case, it is preferable to perform heat treatment in a low oxygen state where the oxygen concentration is about 1000 ppm or less.

According to one aspect of the present invention, at least one of the first processing unit and the second processing unit further comprises means for irradiating the substrate with an electron beam.

According to one aspect of the present invention, at least one of the first processing unit and the second processing unit is
It further comprises means for irradiating the substrate with ultraviolet light.

According to this structure, the insulating film can be irradiated with electron beams or ultraviolet rays in addition to the heat treatment, and the film reforming process such as the curing process can be simultaneously performed.

According to one aspect of the present invention, the second transfer means for transferring the substrate in a direction perpendicular to the transfer direction of the substrate by the first transfer means is adjacent to the first processing section. At the same time, heat treatment is performed on the substrate coated with the insulating film material at a position different from the first temperature and the second temperature, the substrate being arranged at a position where the substrate can be carried in by the second transfer means. It comprises a third processing section for performing, and a third transfer means for transferring the substrate between the second processing section and the third processing section.

With such a configuration, the substrate is not exposed to the atmosphere in the series of heat treatments by performing the three-step heating of the third heat treatment, the first heat treatment, and the second heat treatment. Therefore, the oxidation of the substrate can be prevented and the adverse effect on the insulating film can be prevented. In addition, throughput can be improved by continuous three-step heating.

A second aspect of the present invention is to: (a) heat-treat a substrate coated with an insulating film material at a first oxygen concentration and at a first temperature; On the other hand, a heat treatment is performed under a second oxygen concentration different from the first oxygen concentration and at a second temperature different from the first temperature.

Further features and advantages of the present invention will become more apparent with reference to the accompanying drawings and the description of the embodiments of the invention.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

1 to 3 are views showing the overall configuration of an SOD system according to a first embodiment of the present invention, FIG. 1 is a plan view, FIG. 2 is a front view and FIG. 3 is a rear view. .

In this SOD system 1, a plurality of semiconductor wafers W as substrates are placed in a wafer cassette CR, for example, two wafers.
A cassette block 10 for loading / unloading the wafer W from / to the system from the outside in units of 5 sheets, and for loading / unloading the wafer W to / from the wafer cassette CR,
In the SOD coating step, a single processing type processing station for performing a predetermined processing on each wafer W one by one is integrally connected to a processing block 11 formed by arranging multiple processing stations at predetermined positions.

In the cassette block 10, as shown in FIG. 1, a plurality of wafer cassettes CR, for example, up to four wafer cassettes CR are provided at the positions of the projections 20a on the cassette mounting table 20, with their respective wafer entrances and exits facing the processing block 11 side. A wafer carrier 21 that is placed in a line in the direction and is movable in the cassette arrangement direction (X direction) and in the wafer arrangement direction (Z vertical direction) of the wafers stored in the wafer cassette CR is selectively provided in each wafer cassette CR. It is designed to be accessed. Further, the wafer carrier 21 is configured to be rotatable in the θ direction, and the processing block 11 will be described later.
The transfer / cooling plate (TCP) belonging to the multi-stage station section of the third group G3 on the side can also be accessed.

In the processing block 11, as shown in FIG. 1, a vertical transfer type main wafer transfer mechanism 22 is provided at the center, and all the processing stations are surrounded by one or a plurality of sets of multi-stages. It is located in. In this example,
It is a multistage arrangement configuration of four sets G1, G2, G3, G4, and
The multi-stage stations of the second group G1 and G2 are juxtaposed on the front side of the system (front side in FIG. 1), and the third group G
The multi-tier station of No. 3 is located adjacent to the cassette block 10, and the multi-tier station of the fourth set G4 is located adjacent to the cabinet 12.

As shown in FIG. 2, in the first set G1, the wafer W is placed on the spin chuck in the cup CP, the insulating film material is supplied, and the wafer is rotated to form a uniform insulating film on the wafer. A SOD coating processing station (SCT) for coating is arranged.

In the second set G2, the SOD coating processing station (SCT) is arranged in the upper stage. It is also possible to arrange an SOD coating processing station (SCT), a solvent exchange processing station (DSE) or the like below the second group G2, if necessary.

As shown in FIG. 3, in the third set G3, 2
A low oxygen high temperature heat treatment station (OHP), a low temperature heat treatment station (LHP), two cooling treatment stations (CPL), a transfer / cooling plate (TCP), and a cooling treatment station (CPL). They are arranged in multiple stages from the top. The low temperature heat treatment station (LHP) has a hot plate on which the wafer W is placed, and heats the wafer W at low temperature. Cooling station (C
PL) has a cooling plate on which the wafer W is placed.
Is cooled. The transfer / cooling plate (TCP) has a two-stage structure having a cooling plate for cooling the wafer W in the lower stage and a transfer table in the upper stage, and transfers the wafer W between the cassette block 10 and the processing block 11.

In the fourth group G4, the low temperature heat treatment station (LHP) and the heat treatment station 3 according to the present invention are used.
Two 2 are arranged in multiple stages in order from the top. The heat treatment station 32 will be described later.

Referring to FIG. 3, the main wafer transfer mechanism 22 is equipped with a wafer transfer device 30 which is vertically movable (Z direction) inside the cylindrical support 27. Cylindrical support 2
Reference numeral 7 is connected to a rotary shaft of a motor (not shown), and is rotated integrally with the wafer transfer device 30 about the rotary shaft by the rotational driving force of the motor. Therefore, the wafer transfer device 30 is rotatable in the θ direction. The transfer base 40 of the wafer transfer apparatus 30 is provided with, for example, three arms, and these arms 31 access the processing stations arranged around the main wafer transfer mechanism 22 to communicate with these processing stations. The wafer W is transferred between them.

4 and 5 are a plan view and a sectional view showing the heat treatment station 32 according to the present invention.

The heat treatment station 32 is divided into a first treatment chamber 45 and a second treatment chamber 46, and the first treatment chamber 45 and the second treatment chamber 46 have an opening 33. Through the. A gate shutter 41 that can be opened and closed is provided in the opening 33. Further, on the side of the first processing chamber 45, the arm 31 of the main wafer transfer mechanism 22 is provided.
The window 50 is formed so that the processing chamber 45 can be accessed, and the window 50 is also provided with the shutter member 47 that can be opened and closed. As a result, both processing chambers 45 and 46 can be hermetically sealed.

The first processing chamber 45 and the second processing chamber 46 are provided with heating plates 34 and 35 on which the wafer W is placed and heated at a predetermined temperature, respectively.
The heating plate 34 on the 5 side is controlled by the temperature adjusting unit 54, for example, 20
The temperature of the heating plate 35 on the second processing chamber 46 side can be adjusted to, for example, 350 ° C. to 500 ° C. by the temperature adjusting unit 55.

A motor 5 is provided between the heating plates 34 and 35.
3, a transfer device 37 that moves horizontally along the moving path 42 and transfers the wafer W between both heating plates is provided. The transfer device 37 is provided so that, for example, two holding plates 43 for holding the wafer W from the back surface side are erected up and down by a motor (not shown) built in the base 44. As a result, the transfer device 37 moves to the lower portion of the heating plate 34 or 35 while the holding plate 43 holds the wafer W, and the holding plate 43 moves to the cutout portions 34a and the cutout portions 34a formed in the heating plates 34 and 35, respectively. By entering 35a and descending,
The wafer W is placed on the heating plate 34 or 35.

Although the transfer device 37 is provided here for transferring the wafer W between the heating plates 34 and 35, it may be transferred using a multi-axis transfer arm or the like.

Supply ports 57 and 58 for mixing and supplying, for example, nitrogen as an inert gas and oxygen as a reaction gas are formed in both processing chambers 45 and 46, respectively. These supply ports 57 and 58 are nitrogen gas supply adjusting valves and 6 for adjusting the supply amounts of nitrogen gas supply and oxygen supply.
1, 62 and oxygen supply control valves 63, 64, respectively, and are connected to the nitrogen supply source 36 and the oxygen supply source 65, respectively.

These nitrogen gas supply adjusting valves 61, 62
The oxygen supply adjusting valves 63 and 64 are adjusted in their opening degrees by the control unit 60 based on the measured values of the sensor 48 that measures the oxygen concentration in the chambers provided in the processing chambers 45 and 46. ing. As a result, the nitrogen source 3
The heat treatment is performed while the oxygen in each processing chamber is maintained at a predetermined low concentration by the supply of nitrogen gas from 6 and the supply of oxygen from the oxygen supply source 65.

Further, the heating plate 3 in the first processing chamber 45
UV for irradiating the wafer W with ultraviolet rays, for example,
A lamp 38 is provided, while an EB lamp 39 that irradiates the wafer W with an electron beam, for example, is provided above the heating plate 34 in the second processing chamber 46.

Further, each of the processing chambers 45 and 46 is provided with an exhaust port 56 for exhausting gas inside the chamber, and is connected to an exhaust pipe or the like not shown.

Next, the processing steps of the SOD system 1 configured as described above will be described with reference to the flow shown in FIG.

First, in the cassette block 10, the unprocessed wafer W is transferred from the wafer cassette CR to the wafer carrier 2.
1 is transferred to the transfer table in the transfer / cooling plate (TCP) belonging to the third set G3 on the processing block 11 side.

The wafer W transferred to the transfer table in the transfer / cooling plate (TCP) is transferred to the cooling processing station (CPL) via the main wafer transfer mechanism 22. Then, in the cooling processing station (CPL), the wafer W is processed by the SOD coating processing station (SCT).
The temperature is adjusted to a temperature compatible with the processing in step 1 (step 1).

The wafer W cooled in the cooling processing station (CPL) is transferred to the SO through the main wafer transfer mechanism 22.
It is transported to the D coating processing station (SCT). Then, in the SOD coating processing station (SCT), the wafer W is subjected to SOD coating processing (step 2).

The wafer W subjected to the SOD coating process at the SOD coating process station (SCT) is transferred to the low temperature heat processing station (LHP) via the main wafer transfer mechanism 22. And low temperature heat treatment station (LHP)
In, the wafer W is heat-treated at a low temperature (step 3).

The wafer W that has been subjected to the low temperature heat treatment at the low temperature heat treatment station (LHP) is higher in the low oxygen heat treatment station (OHP) via the main wafer transfer mechanism 22 than in the low temperature heat treatment station (LHP). A low oxygen heat treatment is performed at a temperature (step 4).

The wafer W which has been subjected to the low oxygen heat treatment at the low oxygen heat treatment station (OHP) is transferred to the main wafer transfer mechanism 2
It is conveyed via 2 to the heat treatment station 32 according to the present invention, where a predetermined heat treatment is performed (step 5). This will be described later.

The wafer W heat-treated at the heat treatment station 32 is cooled at the cooling treatment station (CPL) (step 6).

The wafer W cooled in the cooling processing station (CPL) is transferred via the main wafer transfer mechanism 22 to the cooling plate in the transfer / cooling plate (TCP). Then, the wafer W is cooled on the cooling plate in the transfer / cooling plate (TCP) (step 7).

The wafer W cooled by the cooling plate in the transfer / cooling plate (TCP) is transferred to the wafer cassette CR via the wafer transfer body 21 in the cassette block 10.

Depending on the insulating film material, aging treatment (step 2-2) or solvent exchange (step 2-3) may be performed after the coating treatment.

Next, the heat treatment in the heat treatment station 32 in step 5 will be described.

First, the wafer W loaded into the first processing chamber 45 of the heat processing station 32 is placed on the heating plate 34 and heated at 350 ° C. for 10 seconds to 15 minutes, for example. The oxygen concentration in the first processing chamber at this time is, for example, 1000 ppm (step 5 in FIG. 6).
1). At this time, the UV lamp 38 may irradiate the wafer W with ultraviolet rays to appropriately perform the curing process or the like on the insulating film (step 5-12).

Next, the gate shutter 41 is opened, and the wafer W
Is placed on the heating plate 35 in the second processing chamber 46 by the transfer device 37 and heated at a temperature higher than the heating temperature in the first processing chamber 45, for example, 420 ° C. for 10 seconds to 15 minutes. At this time, the oxygen concentration in the second processing chamber 46 is lower than the oxygen concentration in the first processing chamber 45.
It is set to 00 ppm (step 5-2 in FIG. 6). At this time, the EB lamp 39 may irradiate the wafer W with an electron beam so as to appropriately perform the curing process of the insulating film (step 5-22).

FIG. 7 shows the relationship between the heat treatment time (minutes) in the heat treatment station 32 and the heating temperature (° C.) and oxygen concentration (ppm) of the wafer W.

The wafer W heated in the second processing chamber 46 is transferred again to the first processing chamber 45 by the transfer device 37, and is directly transferred from the transfer device 37 to the arm 31 of the main wafer transfer mechanism 22. , Subsequent processing is performed.

As described above, according to this embodiment, the heat treatment in the same low oxygen atmosphere is divided into the two stages of the first heat treatment and the second heat treatment, and the respective treatment chambers 45 perform the respective treatments. And 46 are connected to each other, and the heating temperature and the oxygen concentration in each process are made variable by the temperature adjusting units 54 and 55 and the control unit 60. The polycondensation reaction can be carried out under optimum conditions for various types of insulating films such as organic films and inorganic films having a rate characteristic. Further, the polycondensation reaction can be carried out under the optimum conditions even for a new insulating film material that will be developed in the future.

For example, FIG. 8 schematically shows the relationship between the oxygen concentration during heat treatment, the relative dielectric constant and the strength of the insulating film. As shown in the figure, depending on the type of insulating film, The higher the oxygen concentration, the higher the strength of the film can be formed. On the other hand, the lower the oxygen concentration, the lower the relative dielectric constant can be formed. Even with an insulating film having such various properties, according to this embodiment, the heat treatment can be performed under the optimum conditions, and the polycondensation crosslinking can be ideally combined.

Further, for example, as compared with the case where the heat treatment is carried out by controlling the heat treatment temperature to 200 ° C. to 500 ° C. by the same heating plate in one treatment chamber, in the present embodiment,
Since the heat treatment is performed by the two heating plates 34 and 35, the treatment time can be shortened in terms of the temperature rising time.

Further, in the present embodiment, the first heat treatment and the second heat treatment are connected through the gate shutter 41 which is connected so as to perform the continuous treatment, so that the first heat treatment is completed. From the start of the second heat treatment
On the other hand, it is never taken out of the processing room and exposed to the atmosphere. Therefore, since it is possible to avoid exposing the wafer W heated to 200 ° C. or higher to the atmosphere, it is possible to prevent the wafer W from being oxidized.

FIG. 9 shows a sectional view of a heat treatment station according to the second embodiment.

In this heat treatment station, a cooling treatment chamber 80 is provided adjacent to the second treatment chamber 46 according to the above embodiment. Inside the cooling processing chamber 80, a movable cooling plate 72 that is configured to be accessible to the second processing chamber 46 and cools the wafer W is provided. The moving cooling plate 72 is provided so as to be movable along the moving cylinder 73, and when the shutter 74 provided in the opening 76 is opened, the moving cooling plate 72 is moved through the opening 76 into the second processing chamber. You can enter 46.

The heat treatment station of this embodiment is SO
When applied to the D system, for example, the wafer W is subjected to low temperature heat treatment at the low temperature heat treatment station (LHP) and heat treatment at the low oxygen heat treatment station (OHP), and then the first treatment chamber 45 according to the present embodiment. The heat treatment is performed by the second treatment chamber 46, and then the moving cooling plate 72 performs the cooling treatment up to 23 ° C., for example. After performing the cooling process, for example,
A wafer such as a transfer arm provided outside is transferred into the cooling processing chamber 80 through a window (not shown) provided in the cooling processing chamber 80 to transfer the wafer W.

According to this embodiment, the same effect as the effect according to the first embodiment can be obtained. Further, in the present embodiment, the cooling processing chamber 80 is connected to the second processing chamber 46 to perform continuous processing, so that the throughput can be improved and the processing efficiency can be improved.

FIG. 10 shows a plan view of a heat treatment station according to the third embodiment. In addition, in FIG.
The same components as those in FIG. 5 are designated by the same reference numerals.

The heat treatment station 90 of the present embodiment is adjacent to the low oxygen heat treatment station (OHP) having the heating plate 83 with respect to the first treatment chamber 45 of each of the above-mentioned embodiments via the transfer device 82. I am letting you. The carrier device 82 has the same configuration as the carrier device 37, and the carrier device 82 is arranged along a moving path 88 laid in a direction (X direction) perpendicular to the carrier direction (Y direction) of the carrier device 37. The wafer W is transferred.

As shown in the drawing, the heat treatment station 90 is arranged so as to surround the main wafer transfer mechanism 22 of the SOD system, and the arm 31 of the main wafer transfer mechanism 22 has a low oxygen heat treatment station (OHP). And through the windows 86 and 87 provided in the second processing chamber,
You can enter each room.

In the processing step according to the present embodiment, the wafer W is loaded into the low oxygen temperature heat processing station (OHP) by the arm 31 and heat-treated at, for example, 350 ° C., followed by the first heat-treatment, The second heating process is performed in this order, and the wafer W is taken out by the arm 31 again.

According to this embodiment, the same effect as that of each of the above embodiments can be obtained. In addition, since the three-stage heating including the heat treatment by the low oxygen heat treatment station (OHP), the first heat treatment, and the second heat treatment is performed, the wafer W is not exposed to the atmosphere in the series of heat treatments. It is possible to prevent the oxidation of W and prevent the adverse effect on the insulating film. In addition, throughput can be improved by continuous three-step heating.

The present invention is not limited to the embodiment described above, and various modifications can be made.

In each of the above embodiments, the first heat treatment and the second heat treatment are carried out continuously, but for example,
Another process may be included between the first heat treatment and the second heat treatment, or the type of the insulating film such that only the first heat treatment or only the second heat treatment is performed. It is also possible to appropriately select and perform processing according to the above.

For example, in FIG. 10, the cooling processing chamber 80 having the moving cooling plate 72 shown in FIG. 9 is connected to the second processing chamber 46, whereby the cooling processing is performed as a post-step of the second heating processing. You can also do it.

Further, in FIG. 10, the first processing chamber 45
The low oxygen heat treatment station (OHP) is adjacent to the low oxygen heat treatment station (OHP) by providing the inert gas supply port on the heating plate 83. ) May be used as a low temperature heat treatment station (LHP). Thereby, low temperature heating can be performed at 200 ° C. or lower.

Further, in each of the above embodiments, the apparatus for processing the semiconductor wafer substrate has been described, but the present invention is not limited to this, and the present invention can be applied to an apparatus for processing a glass substrate used for a liquid crystal display or the like. .

[0074]

As described above, according to the present invention,
The heat treatment can be performed under optimum conditions according to various kinds of insulating film materials.

[Brief description of drawings]

FIG. 1 is a plan view of an SOD system according to a first embodiment of the present invention.

FIG. 2 is a front view of the SOD system shown in FIG.

FIG. 3 is a rear view of the SOD system shown in FIG.

FIG. 4 is a plan view showing a heat treatment station according to the first embodiment of the present invention.

5 is a cross-sectional view of the heat treatment station shown in FIG.

FIG. 6 is a flowchart showing a series of processing steps of the SOD system according to the present invention.

FIG. 7 is a diagram showing the relationship between the heat treatment time and the temperature and oxygen concentration of the wafer W according to the embodiment.

FIG. 8 is a diagram schematically showing a relationship between oxygen concentration during heat treatment, relative permittivity and strength of an insulating film.

FIG. 9 is a cross-sectional view of a heat treatment station according to the second embodiment of the present invention.

FIG. 10 is a plan view of a heat treatment station according to a third embodiment of the present invention.

[Explanation of symbols]

W: Semiconductor wafer LHP ... Low temperature heat treatment station 1 ... SOD system 22 ... Main wafer transfer mechanism 31 ... Arm 32 ... Heat treatment station 34, 35 ... Heating plate 36 ... Nitrogen supply source 37 ... Carrier 38 ... UV lamp 39 ... EB lamp 45 ... First processing chamber 46 ... Second processing chamber 54, 55 ... Temperature control unit 60 ... Control unit 61, 62 ... Nitrogen gas supply adjusting valve 63, 64 ... Oxygen supply adjusting valve 65 ... Oxygen supply source 72 ... Moving cooling plate 76 ... Opening 82 ... Conveying device 83 ... Low temperature heating plate 90 ... Heat treatment station

Claims (8)

[Claims] 1. A first processing unit that heats a substrate coated with an insulating film material at a first oxygen concentration and at a first temperature, and is provided adjacent to the first processing unit. And a second processing unit for performing heat treatment on the substrate coated with the insulating film material under a second oxygen concentration different from the first oxygen concentration and at a second temperature different from the first temperature. And a first transfer unit that transfers a substrate between the first processing unit and the second processing unit. 2. The substrate processing apparatus according to claim 1, wherein the heat treatment in the first processing unit and the heat treatment in the second processing unit are continuously performed. 3. The substrate processing apparatus according to claim 1, further comprising concentration changing means for changing the first oxygen concentration and the second oxygen concentration. apparatus. 4. Any one of claims 1 to 3
The substrate processing apparatus as described in the item 1, further comprising a unit that varies the first temperature and the second temperature. 5. The substrate processing apparatus according to claim 3, wherein the first oxygen concentration and the second oxygen concentration are 1000.
A substrate processing apparatus having a concentration of not more than ppm. 6. Any one of claims 1 to 5
The substrate processing apparatus as described in the item 1, wherein at least one of the first processing unit and the second processing unit further includes a unit that irradiates the substrate with an electron beam. 7. Any one of claims 1 to 4
Item 5. The substrate processing apparatus according to item 4, wherein at least one of the first processing unit and the second processing unit further includes a unit that irradiates the substrate with ultraviolet light. 8. Any one of claims 1 to 7
In the substrate processing apparatus according to the item 1, a second transfer unit that transfers a substrate in a direction perpendicular to a transfer direction of the substrate by the first transfer unit, and a second transfer unit that is adjacent to the first processing unit A third substrate which is arranged at a position where the substrate can be carried in by the transporting means, and which performs heat treatment on the substrate coated with the insulating film material at a temperature different from the first temperature and the second temperature. A substrate processing apparatus comprising: a processing unit; and a third transfer unit that transfers a substrate between the second processing unit and the third processing unit.