JP2002368235A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

(57) [Problem] To efficiently manufacture a semiconductor device such as an imaging module without changing the surface shape of a lens during dicing. In a semiconductor device, a first substrate on which a light receiving element is formed and an optical element for collecting light to the light receiving element or a second substrate which is an optical element assembly are bonded via a spacer. The spacer is provided at the cut end of the second substrate. The manufacturing method includes a step of bonding a first substrate and a second substrate via a spacer, and a step of cutting the first and second substrates in a region where the spacer is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly, to a semiconductor device having a photoelectric conversion element and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, an imaging module generally includes a semiconductor chip having a light receiving element and a substrate having a lens for collecting light to the light receiving element. The distance between the semiconductor chip and the substrate is maintained by a spacer, and light can be collected on the light receiving surface of the light receiving element, so that a real image can be obtained.

FIGS. 18 (A), 18 (B) and 18 (C) are exploded perspective views for explaining a manufacturing process of a conventional imaging module. FIG. 18A shows a substrate 917 provided with a lens for collecting light to the light receiving element, FIG. 18B shows a spacer 901, and FIG. 18C shows the formation of the light receiving element 100. 1 shows a semiconductor chip 503 that has been removed.

In the manufacturing process of the imaging module, the substrate 91
7 and the semiconductor chip 503 are bonded via the spacer 901 to manufacture each semiconductor chip. However, when a plurality of imaging modules are manufactured for each semiconductor chip, the semiconductor chip 503 and the substrate 917 are manufactured.
There were many steps such as alignment for each.

FIGS. 19A, 19B and 19C are schematic sectional views showing another manufacturing process of a conventional imaging module.

FIG. 19A shows that a semiconductor wafer 910 on which a plurality of semiconductor chips are formed is slightly warped due to the addition of a passivation film in a semiconductor element manufacturing process. ing. For example, in the case of an 8-inch wafer, the warp has a height difference of about 0.2 mm between the concave and convex portions of the warp, and is shaped like a roll, a saddle, or a bowl.

For this reason, as shown in FIG. 19B, the semiconductor wafer 910 is suctioned from the back side using a jig 950 to eliminate warpage of the semiconductor wafer 910.

Subsequently, as shown in FIG. 19C, a semiconductor wafer 910 and a substrate 9 on which a plurality of lenses are formed are formed.
17 are bonded via a spacer 901.

Thereafter, the suction of the semiconductor wafer 910 is released, the semiconductor wafer 910 and the lens substrate 917 are removed from the jig 950, and these are cut between the semiconductor chips and between the lenses to manufacture an imaging module.
The semiconductor wafer 91 on which the semiconductor chips are thus formed
The manufacturing method of bonding the substrate 0 and the substrate 917 in one alignment was suitable for manufacturing a plurality of imaging modules.

[0010]

(Problem 1) However, after bonding a lens substrate 917 provided with a plurality of lenses for collecting light to a light receiving element via a spacer 901 on a semiconductor wafer 910, a scribe between semiconductor chips is performed. When an imaging module is manufactured by dicing a line, a force is applied to the substrate 917 by a dicing blade at the time of dicing, and the surface shape of the lens changes. .

Accordingly, an object of the present invention is to make it possible to efficiently manufacture a semiconductor device such as an image pickup module without changing the surface shape of a lens during dicing.

(Problem 2) In the manufacturing method shown in FIG. 19, when the suction of the semiconductor wafer 910 is released, the semiconductor wafer 910 attempts to return to the state of warping, and the semiconductor wafer 910 is placed on the convex side of the warped semiconductor wafer 910. When the lens substrate 917 was attached, the semiconductor wafer 910 and the lens substrate 917 were easily peeled off at the peripheral portion of the semiconductor wafer 910.

On the other hand, when the lens substrate 917 is bonded to the concave side of the semiconductor wafer 910 having warpage,
The semiconductor wafer 910 and the lens substrate 917 were easily peeled off at the center of the semiconductor wafer 910.

Therefore, the semiconductor wafer 910 and the lens substrate 917 are separated from each other, and the adhesive layer between the semiconductor wafer 910 and the lens substrate 917 is extended even before the separation is not performed. In some cases, the distance from the lens substrate 917 is deviated, light is not collected on the light receiving element, and required imaging cannot be performed.

Therefore, an object of the present invention is to manufacture a semiconductor device such as an imaging module in consideration of warpage of a semiconductor substrate such as a semiconductor wafer 910 so that an image can be properly captured.

[0016]

In order to solve the above problems, the present invention provides a first substrate having a light receiving element formed thereon, and an optical element or an optical element assembly for collecting light to the light receiving element. In a semiconductor device in which a second substrate is bonded to a second substrate via a spacer, the spacer is provided at an end of the second substrate after cutting.

Further, a method of manufacturing a semiconductor device according to the present invention
The method includes a step of bonding the first substrate and the second substrate via a spacer, and a step of cutting the first and second substrates in a region where the spacer is provided.

Further, in the method of manufacturing a semiconductor device according to the present invention, the step of holding the semiconductor substrate on the base in a state where the warp is eliminated, and the step of attaching the semiconductor substrate to the semiconductor substrate according to the size of the warp of the semiconductor substrate. The method includes a step of bonding the set counter substrate and a step of cutting the counter substrate thereafter.

[0019]

Embodiments of the present invention will be described below with reference to the drawings.

In describing the semiconductor device of the present invention, an image pickup module will be described as an example.

(Embodiment 1) FIG. 1A is a top view showing a schematic configuration of a semiconductor device according to Embodiment 1 of the present invention. FIG. 1B is a schematic cross-sectional view taken along line 1B-1B in FIG. FIG. 1C is a top view of the semiconductor chip 503 in FIG. FIG. 1 (D)
FIG. 3B is a schematic cross-sectional view showing a state where the imaging module of FIG. 1B is connected to an external electric circuit.

In FIGS. 1A to 1D, 560
Is an infrared cut filter, and 501 is the first after cut.
The light transmitting member 506 is used as a substrate of the light transmitting member 50.
A diaphragm light-shielding layer in which a light-shielding member is formed, for example, by offset printing or the like via an infrared cut filter 560 on the upper surface of 1
Reference numeral 512 denotes a compound eye optical element having a compound eye lens including an infrared cut filter, an aperture light blocking layer 506, convex lenses 600a and 600c, and convex lenses 600b and 600d (not shown).

In this embodiment, a compound eye optical element having a compound eye lens having four convex lenses is formed. However, the number of lenses can be determined as appropriate and is not limited to this embodiment. For example, an optical element in which only one lens is formed may be used.

Reference numerals 810a to 810d denote the stop light shielding layer 5.
Aperture aperture formed at 06, each of the lenses 600a to 600a
More preferably, 600d has the same optical axis as the aperture apertures 810a to 810d, respectively. Further, the infrared cut filter 560 may not be provided. In that case, a thinner imaging module can be formed.

Reference numeral 503 denotes a semiconductor chip in which pixels (not shown) including light receiving elements are formed two-dimensionally as the second substrate after cutting. 522 is a compound eye optical element 5
A spacer 509 for defining the distance between the semiconductor chip 503 and the semiconductor chip 503 is provided.
3 is an adhesive that is bonded through a spacer 522.

Reference numeral 513 denotes a MOS type image sensor or CCD
An electrode pad as an external terminal portion for outputting a signal from a light receiving element or a light emitting element such as an imaging element to the outside;
Is a light shielding portion formed in a space surrounded by the compound eye optical element 512, the spacer 522, and the semiconductor chip 503 in order to prevent optical crosstalk between the four convex lenses.

Further, reference numeral 516 denotes a microlens for improving the light-collecting efficiency of each light-receiving element, and 820a to 820d denote a plurality of light-receiving element arrays formed two-dimensionally on the semiconductor chip 503.
An A / D conversion circuit 14 converts an output signal from each light receiving element array into a digital signal. A timing generator 515 generates a timing signal for a photoelectric conversion operation of each light receiving element array.

The spacer 522 may be any member that defines the space between the semiconductor chip 503 and the compound eye optical element 512. For example, a member prepared to have a predetermined length may be used as a spacer, or an adhesive mixed with beads may be used as a spacer.

Reference numeral 517 denotes a multilayer printed board as an external electric circuit board; 520, a bonding wire for electrically connecting an electrode pad 513 (not shown) to an electrode pad on the multilayer printed board 517;
Is a heat or ultraviolet curable resin for sealing the periphery of the electrode pad 513 and the bonding wire 520. In this embodiment, an epoxy resin which is a thermo-ultraviolet curable resin is used.

Further, the present invention can be applied to electrical connection using a TAB film without using the bonding wire 520. The ultraviolet curable resin 520 is a multilayer printed circuit board 517.
The coating is applied over the entire circumference of the imaging module in order to obtain stability of mounting the imaging module on the imaging module. 822
Reference numerals a and 822b denote light receiving elements.

Further, the imaging module according to the present embodiment is characterized in that a spacer 522 is provided at an end of the compound eye optical element 512. That is, the imaging module according to the present embodiment includes the light transmissive member 501 before being cut as the first substrate and the semiconductor chips 5 as the second substrate.
03 and the semiconductor wafer before being cut into spacers 522
And then cutting the region where the spacer 522 is disposed under the light-transmitting member 501. Therefore, a spacer 522 is provided at an end of the light transmitting member 501.

Here, the infrared cut filter 560 is
As shown in FIG. 11, if an electromagnetic wave (ultraviolet light or the like) having a wavelength of 350 nm to 630 nm transmits 80% or more,
Electromagnetic waves of 0 nm or less or 850 nm or more (such as infrared rays)
Is a filter that hardly transmits light.

The infrared cut filter 560 is formed on the entire surface of the light transmissive member 501 by vapor deposition or the like, and a stop light shielding layer 506 is formed thereon. The aperture light-shielding layer 506 does not overlap with the adhesive 509 in the direction of incidence of ultraviolet rays so that the thermo-ultraviolet curable epoxy resin is sufficiently cured when the adhesive 509 is formed.

As a result, the outer shape has an island shape. In the present embodiment, since the adhesive 509 is not limited to the ultraviolet-curable resin, the aperture light-shielding layer 506 and the adhesive 509 may overlap with each other in the incident direction of the ultraviolet light. Note that the direction of incidence of the ultraviolet rays in this specification is the direction of arrow X.

The semiconductor chip 503 and the spacer 52
The reason why the two spacers are shifted from each other is that the electrode pad 513 is formed in a more suitable shape when wiring to an external electric circuit is connected by bonding or the like. Note that the semiconductor chip 503 and the spacer 522 may be formed without being shifted. At this time, it is preferable that the compound eye optical element 512 is formed without being shifted.

Further, the semiconductor chip 503 is formed as shown in FIG.
As shown in (B), a spacer 522 made of resin, glass, silicon, or the like that maintains the distance between the compound eye optical element 512 and the semiconductor chip 503 is provided.

The method of fixing the spacer 522 and the semiconductor chip 503 includes, for example, SOI (Semiconductor on Insul
ator) A bonding step at the time of manufacturing a substrate can be applied, and specifically, a method of fixing with a bonding metal containing aluminum, indium, or the like is preferable.

The light transmissive member 501 includes a resin spherical Fresnel convex lens or a circular axially symmetric aspherical Fresnel convex lens, which is particularly capable of correcting field curvature better than an ordinary optical system using a continuous surface. Convex lenses 600a-600
d is formed by a method such as a replica manufacturing method, injection molding, or compression molding.

The convex lens 600a and the like are adhered to the light transmissive member 501 by, for example, a resin. At this time, a part of the resin may be extruded around the convex lens 600a and the like between the convex lenses 600a and 600c. is there.

However, when the extruded resin reaches the cut surface of the light transmissive member, a force is applied to the resin in the direction of peeling off the light transmissive member 501 at the time of cutting, and the convex lens 600a It is preferable that the extruded resin does not reach the cut surface of the light-transmitting member 501 because a distortion may occur in the light-transmitting member 501.

The positions of the aperture openings 810a to 810d in the direction of the optical axis determine the off-axis principal ray of the optical system, and the aperture position is extremely important in controlling various aberrations. Here, since the convex lens 600a and the like are formed on the image side, if a stop is placed near the center of the spherical surface approximating Fresnel, optical aberrations can be corrected well.

When a color image is to be obtained, a green transmission (G) filter, a red transmission (R) filter, and a blue transmission (B) filter are provided near the convex lenses 600a and the optical axis, for example, by Bayer. When it is desired to arrange them in an array or to acquire a specific color or X-ray image, such filters or phosphors may be arranged. Although not shown in the present embodiment, a green transmission (G) filter, a red transmission (R) filter, and a blue transmission (B) filter are formed in a Bayer arrangement.

The semiconductor chip 503 includes, for example, a microlens 516 for collecting light on a light receiving element so that an image of a low-luminance object can be easily picked up, and an optical cross between light passing through the convex lens 600a and light passing through the convex lens 600c. A light-shielding portion 508 for preventing occurrence of talk is formed. Actually, a light shielding portion is provided between each convex lens and the like.

In FIG. 1C, if the light receiving element 822a or the like is a CMOS sensor, for example,
It becomes easy to mount the D conversion circuit 514, etc., and the A / D
The conversion circuit 514 and the adhesive 509 are connected to the semiconductor chip 50.
3, the area of the semiconductor chip 503 is reduced, which leads to cost reduction.

When the adhesive 509 is provided so as to avoid the dicing line, the adhesive 509 melts due to frictional heat with the dicing blade, becomes small pieces, or becomes carbon particles, and is formed on the convex lens 600a or the like. This is more preferable because it does not cause the adhesion and lower the quality of the imaging module.

Further, as the microlenses 516 arranged around the light receiving areas 820a to 820d are closer to the light receiving area 82,
0a and 820d are displaced in the center direction.

FIG. 1D shows a multilayer printed board 517 as an external electric circuit board and a multilayer printed board 517.
A bonding wire 520 for electrically connecting the side to the electrode pad 513 and a thermo-ultraviolet curing resin 521 for sealing around the electrode pad 513 and the bonding wire 520 are shown.

Adhesive 509 and thermo-ultraviolet curable resin 521
By performing the above sealing, it is possible to prevent the ingress of dust, the deterioration of the microlens 216 and the filter layer due to the humidity in the air, and the electrolytic corrosion of the aluminum layer.

The thermo-ultraviolet curable resin 521 is applied over the entire periphery of the image pickup module 511 in order to secure the mounting stability of the image pickup module 511 on the multilayer printed circuit board 517.

Electrode pads 113 and multilayer printed circuit board 51
7 is connected by bonding wire 520, ITO
Since a membrane or a penetrating metal body is not required, it can be manufactured at a low cost. Note that a TAB film may be used instead of the bonding wire 520.

FIG. 2 shows the light receiving elements 822a and 822a of FIG.
It is the schematic cross section which expanded 822b vicinity. In FIG. 2, reference numerals 516a and 516b denote respective light receiving elements 822a and 822a.
Microlenses 823a and 8 formed on 22b
Reference numeral 23b denotes a light beam that has entered through the aperture openings 810a and 810b. The micro lens 516a is eccentric upward with respect to the light receiving element 822a.
The micro lens 516b is eccentric downward with respect to b.

As a result, only the light beam 823a is received by the light receiving element 82.
2a, and only the light flux 823b enters the light receiving element 822b. The light beams 823a and 823b are
The light-receiving surface 822b is inclined vertically with respect to the light-receiving surface, and each is directed toward the aperture openings 810a and 810b.

Therefore, the micro lenses 516a, 516a,
If the amount of eccentricity of 16b is appropriately selected, only a required light beam enters each light receiving element 822a and the like. That is,
The object light passing through the aperture 810a of the stop is mainly
The amount of eccentricity can be set so that the object light received at 20a and passed through the aperture 810b of the stop is received at the light receiving area 820b.

Here, the mechanism of processing the electric signals converted in the light receiving regions 820a to 820d of the image pickup module which is the semiconductor device according to the first embodiment of the present invention will be described with reference to FIGS.

FIG. 3 is a diagram showing the positional relationship between the object image of the compound eye lens mounted on the image pickup module of this embodiment and the image pickup area.

In FIG. 3, 320a, 320b, 32
0c and 320d are four light receiving element arrays of the semiconductor chip 503. Here, in order to simplify the description, it is assumed that each of the light receiving element arrays 320a, 320b, 320c, and 320d has 8 × 6 pixels.

The number of pixels can be determined as appropriate, and is not limited to this embodiment. Also, the light receiving element array 3
20a and 320d receive the G image signal,
b outputs an R image signal, and the light receiving element array 320c outputs a B image signal. Pixels in the light receiving element arrays 320a and 320d are indicated by white rectangles, pixels in the light receiving element arrangement 320b are indicated by hatched rectangles, and pixels in the light receiving element arrangement 320c are indicated by black rectangles.

A separation band having a size corresponding to one pixel in the horizontal direction and three pixels in the vertical direction is formed between each light receiving element array. Therefore, the center distance of the light receiving element array that outputs the G image is the same in the horizontal and vertical directions. 351a,
351b, 351c and 351d are object images. Because of the pixel shift, the object images 351, 352, 353 and 3
54 centers 360a, 360b, 360c and 360d
Are light-receiving element arrays 320a, 320b, and 320c, respectively.
And 320d from the center of the entire light receiving element array
It is offset by 1/4 pixel in the direction of e.

As a result, when each light receiving element array is back-projected on a plane at a predetermined distance from the object side, the result is as shown in FIG.

FIG. 4 is a diagram showing a positional relationship between pixels when the image pickup area shown in FIG. 3 is projected. Also on the subject side, the backprojected images of the pixels in the light receiving element arrays 320a and 320d are outlined rectangles 362a, and the backprojected images of the pixels in the light receiving element arrays 320b are hatched rectangles 362b. The back-projected image of the pixel is indicated by a black rectangle 362c.

The centers 360a, 360b and 360 of the object image
The back projection images of c and 360d overlap as a point 361, and the light receiving element arrays 320a, 320b, 320c, and 3
Each pixel of 20d is back-projected so that its center does not overlap. Open rectangles represent G image signals, hatched rectangles represent R image signals, and black rectangles represent R image signals.
Since an image signal is output, as a result, sampling equivalent to that of an image sensor having a Bayer array color filter is performed on a subject.

In comparison with an image pickup system using a single photographing lens, considering that the pixel pitch of the solid-state image pickup device is fixed, 2 × 2 pixels are set as a set on the semiconductor chip 503 as R.
Compared with the Bayer array system in which the GBG color filters are formed, the size of the object image is 1 / √4 in this system.
Accordingly, the focal length of the taking lens is about 1 / お よ そ 4 =
It is shortened to 1/2. Therefore, it is very suitable for thinning the camera.

The operation of the imaging module shown in FIG. 1 will be briefly described.
The light passes through the aperture openings 810a to 810d, and is formed by convex lenses 600a to 600d formed under the respective aperture openings.
A plurality of object images are formed on the semiconductor chip 503 and collected by the light receiving elements by the microlenses 516.

At this time, since the color filters are provided as described above, four object images of RGBG are formed on each light receiving element, and the light received by each light receiving element is converted into an electric signal.

Here, a method of manufacturing an imaging module as a semiconductor device of the present invention will be described with reference to FIGS.

FIG. 5 is an exploded perspective view for explaining a manufacturing process of the semiconductor device according to the first embodiment of the present invention. In FIG. 5, reference numeral 901 denotes a spacer including spacers 522a and 522b; 503a and 503b denote semiconductor chips;
Reference numeral 17 denotes each lens on the light transmitting members 501a and 501b,
An optical element assembly on which a light-shielding layer, a color filter (not shown), and the like are formed.

First, the light transmitting members 501a and 501 having the convex lens 600a and the like are provided on the spacer 901.
The optical element assembly 917 made of b is bonded. Then, the dicing line between the semiconductor chips 503a and 503b is diced to form the semiconductor chip 50.
An imaging module having the semiconductor chip 503b and an imaging module having the semiconductor chip 503b are manufactured. The region to be diced is a region where a spacer is formed below the light transmitting member 501 as the first substrate.

The dicing line is, for example, a groove formed by etching the optical element assembly 917, a metal mark formed by a photolithography technique, or a resin protrusion formed by a replica. In particular, the convex lens 6
If it is formed as a replica at the same time as 00a or the like, the number of manufacturing steps can be reduced.

FIG. 6 is a top view of the spacer 901 shown in FIG. The spacer 901 is divided into spacers 522a and 522b along a division line 903. Further, the spacer 901 has a plurality of openings 90 for guiding a light beam transmitted through the convex lens 600a or the like shown in FIG. 1 to the light receiving element 822a or the like.
2 are formed.

FIGS. 7 to 10 are top views of the respective semiconductor wafers in the manufacturing process of the semiconductor device of the present embodiment.

FIG. 7 shows the spacer 901 and the semiconductor wafer 91.
FIG. 9 is a top view of the semiconductor wafer 910 when bonding 0.

FIG. 8 is a top view of the semiconductor wafer when the optical element assembly 917 is bonded to the semiconductor wafer 910 via the spacer 901 after the spacer 901 is formed.

FIG. 9 is a top view of a semiconductor wafer 910 on which all the optical element assemblies 917 are bonded.

FIG. 10 is a schematic cross-sectional view showing a dicing step after all the optical element assemblies 917 have been bonded.

Here, in order to describe the method of manufacturing a semiconductor device of the present embodiment in detail, first, 22 semiconductor chips 503 are formed on a semiconductor wafer 910 as a second substrate. Each semiconductor chip 503 is in a state similar to that in FIG. The number of semiconductor chips formed on the semiconductor wafer 910 can be determined as appropriate.

Since the semiconductor wafer 910 may be slightly warped, the semiconductor wafer 910 may be bonded to the optical element assembly 917 as necessary.
The warpage of the semiconductor wafer 910 is eliminated by suction or the like from the back side of the semiconductor wafer 910.

According to such a method, when the suction of the semiconductor wafer 910 is released later, a force is applied to the semiconductor wafer 910 to return to the original state. This force causes the optical element assemblies 917 to collide with each other. Therefore, it is more preferable to provide a small gap between the semiconductor wafers 910 so that the distance between the semiconductor wafer 910 and the optical element assembly 917 does not shift.

In particular, since the tendency of the area of the semiconductor wafer 910 to expand is further increased, the semiconductor wafer 910
When the optical element assembly 917 is bonded in a state in which is absorbed, if a slight gap is provided between the semiconductor wafers 910, the manufactured imaging module can be easily made into a good product.

Then, for example, two semiconductor chips 50
The spacer 901 is aligned and bonded on the third adhesive 509. The arrow J indicates the position of the dicing line (FIG. 7).

Generally, since the semiconductor wafer 910 is a crystal, the electrical, optical, mechanical, and chemical properties have anisotropy. Therefore, the pulled ingot is sliced after measuring the plane orientation with high accuracy by a method using X-ray diffraction or the like. Prior to this slicing, a linear portion called an orientation flat 909 is formed on a cylindrically processed ingot to indicate the crystal orientation.

When a semiconductor element pattern such as the semiconductor chip 503 is formed in accordance with the orientation flat 909, a reference pattern is provided on the optical element assembly 917 in a later step, and the reference pattern and the orientation flat 909 are combined. If used for alignment, precise alignment can be performed.

The size of the optical element assembly 917 is as follows.
When the size is set to the maximum size that can be accommodated in the effective exposure size of the stepper, the number of imaging modules that can be manufactured from one wafer can be increased, which is advantageous in cost.

Then, after bonding the spacers 901 to the respective semiconductor chips 503, the optical element assembly 917 is placed in a state where the openings 902 of the respective spacers 901 are aligned with the convex lenses 600a and the like. Paste using such as. Note that the arrow K indicates the position of the dividing line 903 and the dividing line of the optical element assembly 917 (FIG. 8).

Specifically, after this epoxy resin is semi-cured by irradiating ultraviolet rays, it is pressed until a predetermined gap is formed, and is subjected to a slight heat treatment to completely cure the epoxy resin. A gap with the semiconductor wafer 910 is set so that an object image is sharply formed on the light receiving element array 912.

Incidentally, the epoxy resin is used for the optical element assembly 9.
17 or the like, melted by frictional heat, broken into small pieces, or turned into carbon particles when cutting 17 or the like.
0a, etc., so that the quality of the imaging module is not deteriorated.
3, that is, it is preferable to form it avoiding the dicing line.

Similarly, an optical element assembly 917 is attached to each spacer 901 (FIG. 9).

The epoxy resin is used because it cures slowly, has no unevenness in curing shrinkage, and relieves stress. In the present embodiment, a thermosetting resin may be used as the adhesive. However, heating sufficient to cure the thermosetting resin may be applied to the microlenses, the replica portion, and the aperture light-shielding layer 506 formed on the semiconductor wafer 910. It is preferable to use an ultraviolet curable resin because there is a risk of deteriorating the printing paint or the like.

At this time, the infrared cut filter forming area 56 is formed around the aperture light shielding layer 506 of the light transmitting member 501.
Although 0 is formed, the epoxy resin can be cured by irradiating the ultraviolet light from the front of the semiconductor wafer 910 if the spectral transmittance characteristic of the ultraviolet light transmitting filter is set so as to transmit the ultraviolet light.

If the optical element assembly 917 is bonded and fixed before cutting each semiconductor chip 503 from the semiconductor wafer 910, the semiconductor wafer 9
10 and the optical element assembly 917 are easily made parallel, that is, the distances between the respective positions of the semiconductor wafer 910 and the optical element assembly 917 are easily equalized, so that one-sided blurring of the optical image hardly occurs.

Finally, the semiconductor wafer 910 is diced at the position of arrow J, and the spacer 901 and the optical element assembly 917 are cut at the position of arrow K. Specifically, for example, dicing of the semiconductor wafer 910 is described in
A cutting apparatus or a laser processing apparatus disclosed in JP-A-345785 or JP-A-2000-061677 is used.

As shown in FIG. 10, when a dicing blade is used, only the semiconductor wafer 910 is cut from the back surface of the semiconductor wafer 910 along the arrow J while cooling with cutting water. In FIG. 10, reference numeral 523 denotes a dicing blade.

Next, along the arrow K, the optical element assembly 9
From the surface of the optical element assembly 917 and the spacer 90
Cut only 1

The dicing blade 523 rotates in the direction of arrow L, which is the direction in which the semiconductor wafer 910 before cutting into the respective semiconductor chips 503 is pressed, but if there is a resin layer connected to the convex lenses 600a to 600d on the dicing line, A force is applied in a direction in which the convex lenses 600a to 600d are peeled off from the glass substrate of the compound eye optical element 512, and the surface accuracy of the convex lenses 600a to 600d is deteriorated.

In this embodiment, the dicing blade 52
Since the resin is removed from the position where 3 passes, no excessive force is applied to the convex lenses 600a to 600d.
Such a defect does not occur. Further, the resin does not melt due to frictional heat with the dicing blade 523, becomes fine fragments, or becomes carbon particles and adheres to the lens surface, and does not lower the quality of the imaging module.

The semiconductor wafer 910 is formed by the above-described steps.
And the optical element assembly 917 are cut into squares, and the imaging module 511 shown in FIG. 1 is obtained. In addition, a triangle or a hexagon can be cut out by such a cutting step.

Finally, the imaging module 511 is
The connection is made to the multilayer printed circuit board 517 as shown in FIG.

As described above, in this embodiment, the spacer 901
Is, for example, two spacers and the optical element assembly 917 is two compound eye optical elements. However, three or four optical element assemblies may be used.
01 and the like have the same size as the semiconductor wafer 910, and the semiconductor chips 503 formed on the semiconductor wafer 910
The opening 902, the convex lens 600a, and the like may be formed in accordance with the side.

In this embodiment, an image pickup module has been described as an example of a semiconductor device. However, for example, an electron emission element that emits electrons is provided on a semiconductor wafer 910, and a substrate such as a fluorescent material is provided on a substrate opposed to a spacer 522. The invention can also be applied to an image forming module having a light emitting element.

As described above, in the present embodiment, the surface shape of, for example, a lens formed on the first substrate is changed by preventing the force applied to the first substrate 917 at the time of dicing by the spacer. Has been prevented.

Thus, a semiconductor device such as an imaging module can be easily and efficiently formed without changing the surface shape of the lens, that is, without deteriorating the imaging performance.

(Embodiment 2) FIGS. 12A to 12
(D) is a schematic manufacturing process diagram of the semiconductor device of Embodiment 2 of the present invention; 12A to 12D, reference numeral 910 denotes a semiconductor substrate having a warp as a semiconductor substrate having a plurality of semiconductor chips formed thereon, and reference numeral 950 denotes a semiconductor wafer formed by adsorbing the semiconductor wafer 910 from the back side. A jig 917 for eliminating warpage is an optical element assembly as a counter substrate.

In FIG. 12, the same parts as those shown in FIG. 1 and the like are denoted by the same reference numerals.

As shown in FIG. 12A, the semiconductor wafer 910 may be slightly warped due to the addition of a passivation film in the semiconductor device manufacturing process. For example, in the case of an 8-inch wafer, the warp has a height difference of about 0.2 mm between the concave and convex portions of the warp, and is shaped like a roll, a saddle, or a bowl.

In order to prevent the occurrence of stress due to the release of the back surface suction, a small number of optical element assemblies are used for the entire semiconductor wafer 910 with respect to low frequency undulations whose irregularities are about twice the diameter of the semiconductor wafer 910. The number of optical elements included in one optical element assembly 917 is increased so as to cover the entire body of the semiconductor wafer 910. It is necessary to reduce the number of optical elements included in one optical element assembly so as to cover.

The gap P is preferably set to 10 μm to 500 μm in consideration of a size error of the optical element assembly.

The frequency characteristics of the undulation of the semiconductor wafer 910 can be obtained by performing a frequency analysis on the surface shape. In general, the larger the wafer size, the lower the frequency tends to be.

Therefore, when bonding with the optical element assembly 917, the semiconductor wafer 910 is placed on the jig 9 from the back side.
The warp of the semiconductor wafer 910 is eliminated by suction using 50 (FIG. 12B).

More specifically, the semiconductor wafer 910 is sucked by a suction device (not shown) so that the entire back surface of the semiconductor wafer 910 contacts the jig 950.

In this state, a plurality of spacers 901 are positioned and bonded on the semiconductor wafer 910, and then the optical element assembly 917 is positioned and bonded on the spacers 901 and then the adhesive (FIG. 12C).

Then, after the adhesive is cured, the suction is released.

Note that the spacer 901 is appropriately disposed when the semiconductor wafer and the optical element assembly 917 are bonded to each other as necessary, and may not be provided.

Here, the size of the optical element assembly 917 is determined according to the size of the warp of the semiconductor wafer 901. That is, the larger the warp of the semiconductor wafer 910, the smaller the spacer 901 and the optical element assembly 917 need to be.

The jig 950 of the semiconductor wafer 910 is
When the suction from the substrate is released, a force for returning the semiconductor wafer 910 to the original state is exerted, so that a creep phenomenon occurs in the adhesive material. When 917 is increased,
When the semiconductor wafer 910 is warped in a convex shape, the distance between the optical element assembly 917 and the semiconductor wafer 910 becomes longer as the semiconductor chip 503 becomes closer to the center of the semiconductor wafer 910. This is because it may deviate from the range, which is not preferable.

On the other hand, it is preferable to increase the size of the spacer 901 and the like as much as possible because the balance between the compound-eye optical element 512 and the semiconductor chip 503 of each imaging module is easily maintained and the number of troublesome alignments is reduced. It is.

Therefore, specifically, for example, when an 8-inch wafer has a bowl-shaped warp having a height difference of about 0.2 mm between the concave and convex portions, and the semiconductor chip 503 has a side length of about 6 mm. When about 600 are formed, the spacer 901 and the like may be sized so as to be equivalent to three semiconductor chips in the direction of one side. FIG.
In FIG. 2, a plurality of optical element assemblies 917 according to the size of the sled are arranged, but one opposing substrate according to the size of the sled may be arranged.

Further, as shown in the figure, when the suction of the semiconductor wafer 910 on which the plurality of optical element assemblies 917 are arranged from the jig 950 is released, the plurality of optical element assemblies 917 collide with each other. When the semiconductor wafer 910 and the optical element assembly 9 fit together, a creep phenomenon occurs in the adhesive and the adhesive expands or the adhesive is peeled off.
A small gap P is provided between the plurality of optical element assemblies 917 in accordance with the size of the warp of the semiconductor wafer 910 so that the distance from the semiconductor wafer 910 does not shift (FIG. 12).
(D)).

In particular, since the semiconductor wafer 910 tends to have a large area, when the optical element aggregates 917 are bonded together while the semiconductor wafer 910 is attracted, a slight gap P is formed between the optical element aggregates 917. Providing this makes it possible to improve the quality of the imaging module.

The optical element 522 shown in FIG. 1A can be used as the optical element, and the optical element assembly 517 shown in FIG. 5 can be used as the optical element assembly. Although the optical element assembly 517 shown in FIG. 5 is in a state before being cut into two optical elements, the number of optical elements cut and cut out from the optical element assembly can be determined as appropriate.

Further, another possible shape of the optical element assembly will be described with reference to FIGS. 13 and 14. FIG.

FIG. 13 is a schematic top view of the optical element assembly 962. In FIG. 13, reference numeral 963 denotes a lens.
The optical element assembly 962 has a cross shape, whereby five imaging modules having one lens in each imaging module can be manufactured.

It is to be noted that the lens 963 is
2 are formed at the same pitch as the semiconductor chips formed on the semiconductor wafer 910 so that the respective lenses 963 are formed corresponding to the respective image pickup modules when the semiconductor wafer 910 is bonded to the semiconductor wafer 910 (not shown). ing.

FIG. 14 is a schematic top view of the optical element assembly 964. In FIG. 14, reference numeral 965 denotes a lens.
The optical element assembly 962 has a rectangular shape, so that four imaging modules can be manufactured.

It is to be noted that the lens 965 is
4 are formed with the same pitch as the pitch of the semiconductor chips formed on the semiconductor wafer 910 so that each lens 963 is formed corresponding to each imaging module when the semiconductor wafer 910 is bonded to the semiconductor wafer 910 (not shown). ing.

The optical element assembly is not limited to the cross shape or the rectangular shape, but may be a T shape, an E shape, an L shape, or the like.

Here, the manufacturing process of the semiconductor device of the present embodiment will be described in more detail with reference to FIGS.

FIG. 15 is a schematic top view showing a semiconductor wafer on which semiconductor chips are formed. In FIG.
960 is a semiconductor wafer and 961 is a semiconductor chip.

FIG. 16 is a schematic top view of a semiconductor wafer showing a step of bonding the optical element assembly shown in FIGS. 13 and 14 to the semiconductor wafer shown in FIG.

FIG. 17 is a schematic top view in which an optical element assembly is bonded to the entire surface of a semiconductor wafer.

Normally, as many semiconductor chips 961 as possible are formed on a semiconductor wafer 960 as shown in FIG.

However, around the semiconductor wafer 960,
The optical element assembly 917 as described with reference to FIG.
When the spacers and the spacers 901 are attached to the two semiconductor chips 503, the semiconductor chips 961 manufactured in large numbers may not be used effectively. The semiconductor chip 961 is formed around the semiconductor wafer 960 in a portion other than the orientation flat.

Therefore, for example, as shown in FIG. 16, the optical element assembly 9 is formed in a staggered manner at each corner of the optical element assembly 965.
63 are arranged in a state where they are aligned via an adhesive. Then, as shown in FIG.
The optical element aggregate 965 or the optical element aggregate 963 is arranged on all the semiconductor chips 961 formed in the above.

Incidentally, a gap Q is provided between the longitudinal sides of the optical element assembly 963 in consideration of the warpage of the semiconductor wafer 960.

In this embodiment, for simplicity, FIG.
Although the description has been given using the optical element aggregates 963 and 965 shown in FIG. 14, when the optical element aggregates 963 and 965 are used, as shown in FIG. Because it will happen
Actually, an imaging module is manufactured using an optical element assembly having a shape conforming to each semiconductor chip 961 formed on a semiconductor wafer 960.

In this way, even if the semiconductor substrate is to be returned to a warped state by removing the semiconductor substrate from the jig (base), the semiconductor substrate and the opposite substrate are hardly peeled off.

[0135]

As described above, according to the present invention,
A semiconductor device such as an imaging module can be manufactured efficiently without changing the surface shape of the lens during dicing.

Further, according to the present invention, since the semiconductor substrate and the counter substrate are hardly peeled in consideration of the warpage of the semiconductor substrate, it is possible to perform an image pickup properly.

[Brief description of the drawings]

FIG. 1 is a top view schematically illustrating a configuration of a semiconductor device according to a first embodiment of the present invention, a schematic cross-sectional view, a top view of a semiconductor chip, and a schematic diagram illustrating a state where the semiconductor device is connected to an external electric circuit. It is sectional drawing.

FIG. 2 is an enlarged schematic cross-sectional view of the vicinity of light receiving elements 822a and 822b in FIG.

FIG. 3 is a diagram illustrating a positional relationship between an object image of a compound eye lens mounted on the imaging module of the present embodiment and an imaging region.

FIG. 4 is a diagram showing a positional relationship between pixels when the imaging region of FIG. 3 is projected.

FIG. 5 is an exploded perspective view for explaining a manufacturing process of the semiconductor device of the present invention.

6 is a top view of the spacer 901 shown in FIG.

FIG. 7 is a top view of the semiconductor wafer 910 when the semiconductor wafer 910 is bonded to the spacer 901.

FIG. 8 is a top view of the semiconductor wafer when the optical element assembly 917 is further bonded to the semiconductor wafer 910 via the spacer 901 after the spacer 901 is formed.

FIG. 9 is a top view of a semiconductor wafer 910 to which all the optical element assemblies 917 are attached.

FIG. 10 is a schematic cross-sectional view illustrating a process of dicing after all the optical element aggregates 917 have been bonded.

FIG. 11 is a diagram showing a spectral transmittance characteristic of an infrared cut filter.

FIG. 12 is a schematic manufacturing process diagram of the semiconductor device according to the second embodiment of the present invention.

FIG. 13 is a schematic top view of the optical element assembly.

FIG. 14 is a schematic top view of the optical element assembly.

FIG. 15 is a schematic top view showing a semiconductor wafer on which semiconductor chips are formed.

FIG. 16 is a schematic top view of the semiconductor wafer showing a step of bonding the optical element assembly shown in FIGS. 13 and 14 to the semiconductor wafer shown in FIG. 15;

FIG. 17 is a schematic top view in which an optical element assembly is bonded to the entire surface of a semiconductor wafer.

FIG. 18 is an exploded perspective view for explaining a manufacturing process of a conventional imaging module.

FIG. 19 is a schematic cross-sectional view showing another manufacturing process of the conventional imaging module.

Claims (13)

[Claims] In a semiconductor device, a first substrate on which a light receiving element is formed and an optical element for collecting light to the light receiving element or a second substrate which is an optical element assembly are bonded via a spacer. The semiconductor device according to claim 1, wherein the spacer is provided at an end of the second substrate after cutting. 2. The semiconductor device according to claim 1, wherein said second substrate is a compound eye optical element having a plurality of lenses. 3. A method comprising: bonding a first substrate and a second substrate via a spacer; and cutting the first and second substrates at a region where the spacer is provided. A method for manufacturing a semiconductor device. 4. The method according to claim 3, wherein a light receiving element is formed on the second substrate. 5. The method according to claim 3, wherein the first substrate has a plurality of lenses formed thereon. 6. A step of holding a semiconductor substrate on a base in a state where warpage is eliminated, and a step of bonding an opposing substrate having a size set in accordance with the size of the warp of the semiconductor substrate to the semiconductor substrate. ,
Cutting the opposing substrate thereafter. 7. The semiconductor device according to claim 6, wherein, in the step of bonding the plurality of opposing substrates to the semiconductor substrate, an interval between the plurality of opposing substrates is set according to a size of a warp of the semiconductor substrate.
The manufacturing method of the semiconductor device described in the above. 8. The semiconductor device according to claim 6, wherein in the step of bonding the counter substrate to the semiconductor wafer, the counter substrate is bonded via a spacer. 9. The method of manufacturing a semiconductor device according to claim 6, wherein the step of cutting the opposing substrate is a step of cutting a region where the spacer is disposed below the first opposing substrate. Method. 10. A light receiving element is formed on the semiconductor substrate, and an optical element or an optical element assembly for collecting light to the light receiving element is formed on the counter substrate. Or the method for manufacturing a semiconductor device according to 7. 11. The method of manufacturing a semiconductor device according to claim 6, wherein the opposing substrate is formed with a compound eye optical element having a plurality of lenses. 12. The method according to claim 6, wherein the semiconductor substrate is a semiconductor wafer. 13. The opposing substrate has a rectangular shape, a cross shape,
8. The method according to claim 6, wherein the semiconductor device has a T-shape, an E-shape, an L-shape, or a polygonal shape.