JP2002064069A - Heat treatment equipment - Google Patents

Abstract

(57) Abstract: When a semiconductor wafer is heated using a heat radiation lamp to perform, for example, an annealing process, a temperature generated in a wafer surface due to a difference in a temperature rising rate between the wafer and a mounting table of the wafer. To reduce the difference and reduce the occurrence of slip. SOLUTION: The wafer is placed on a ring-shaped mounting table that supports the wafer from below the peripheral edge in a processing container, and heated by a large number of heat radiation lamps facing the wafer. A light transmitting window made of quartz is provided between the wafer and the heat radiation lamp, and a peripheral portion of the light transmitting window is flat on an upper surface side, and a convex lens portion protruding toward a processing space is formed on a lower surface side thereof. ing. Of the light rays emitted from the heat radiation lamp, rays going to the outside of the mounting table are refracted by the convex lens portion and approached to the inside, so that the heating rate of the mounting table is increased by that amount, and the wafer is mounted on the wafer at the time of temperature increase. The temperature difference with the table is reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus for performing an annealing or a CVD by heating an object to be processed by a lamp.

[0002]

2. Description of the Related Art As one of semiconductor manufacturing apparatuses, there is a single-wafer heat treatment apparatus in which a semiconductor wafer (hereinafter, referred to as a wafer) is heated by a heat radiation lamp to perform annealing, CVD, or the like. FIG. 11 shows an example of such a heat treatment apparatus. As shown in FIG. 11, a processing container 11, a ring-shaped mounting table 12 on which a wafer W is mounted and which is rotatably provided around a vertical axis, and the mounting table 12, for example, quartz A heat radiation lamp 14 opposed to the processing container 11 via a flat light transmission window 13 made of a material.
There is known a configuration in which a predetermined processing gas is supplied from one side wall and exhausted from the other side wall, the wafer W is heated at a predetermined temperature, and heat treatment such as annealing is performed.
The structure for rotating the mounting table 12 actually secures airtightness in the processing chamber 11 by using a magnetic coupling, but is schematically illustrated in the drawing.

[0003]

By the way, the mounting table 12
Is selected from materials that have high heat resistance and do not substantially deform even at a processing temperature of, for example, about 1000 ° C.
(Silicon carbide) is used. In the heat treatment apparatus described above, the mounting table 12 and the wafer W are both heated from above by the heat radiation lamp 14, but the mounting table 12
When C is used, the SiC forms the wafer W
Since the heat capacity is larger than i (silicon), the rate of temperature rise is slower than that of the wafer W.

Therefore, when the temperature of the wafer W is raised, the mounting table 12
Is lower than the temperature of the wafer W, and as a result, the heat of the peripheral portion of the wafer W escapes to the mounting table 12 side, so that the temperature of the peripheral portion becomes lower than the temperature of the central portion, and the wafer W Temperature distribution occurs. On the other hand, the wafer W is, for example, 8
When heated to a temperature higher than the high temperature area of about 00 ° C,
A crystal defect called a slip occurs, and the slip is more likely to occur as the temperature difference in the plane of the wafer W increases.

Therefore, conventionally, the temperature of the wafer W is increased at an excessively high rate so that the delay in the temperature increase of the mounting table 12 is not increased, that is, the temperature difference in the plane of the wafer W is not increased. And it was one of the factors that hindered the improvement of the throughput. As a countermeasure, increasing the amount of heat radiation on the peripheral side of the wafer W may be considered, but it is difficult to realize this method because it is structurally difficult to increase the directivity of the heat radiation lamp 14.

Further, an irradiation area corresponding to each of the plurality of heat radiation lamps 14 is formed on the wafer W. However, the heat radiation lamp 14 and the wafer W
Can't be too small. For this reason, the directivity of each heat radiation lamp 14 (specifically, the directivity of a unit in which one heat radiation lamp and a reflector are combined) is deteriorated, that is, each irradiation area is expanded, and a plurality of irradiation areas Overlap and the degree of overlap is large.

Although not shown, a plurality of radiation thermometers are arranged below the wafer W, and heat radiation from the wafer W is determined between the positions where the radiation thermometer is arranged and the positions where the radiation thermometers are not arranged. Therefore, in order to uniformly heat the wafer W over the entire surface, it is necessary to adjust the illuminance distribution on the wafer W. However, if the degree of overlapping of the plurality of irradiation areas is large, it is difficult to adjust the illuminance distribution.

The present invention has been made in view of such circumstances, and an object of the present invention is to reduce a temperature difference in a surface of a processing object when the temperature of the processing object is increased by a heat radiation lamp. . Another object of the present invention is to improve the directivity of the heat radiation lamp and to facilitate the adjustment of the illuminance distribution on the object to be processed.

[0009]

According to the present invention, there is provided a heat treatment apparatus, comprising: a processing container for partitioning a processing space for processing an object to be processed; and a processing container provided in the processing container for mounting the object to be processed. A mounting table, a gas supply unit for supplying a processing gas for processing the processing object into the processing container, and a gas supply unit provided to face the processing object on the mounting table, forming a part of the processing container; And a heating means comprising a heat radiation lamp provided on the side opposite to the processing space with respect to the light transmitting window, wherein the light transmitting window has a peripheral portion facing the processing space side. To form a convex lens portion formed in a convex shape. In the present invention, for example, the mounting table rotates around a substantially vertical axis relative to the heat radiation lamp.

According to the present invention, light traveling from the heat radiation lamp toward the outside of the object to be processed is directed inside by the convex lens portion. Therefore, the thermal radiation energy can be effectively used. For example, when the periphery of the object to be processed is held by the mounting table located outside the object to be processed and having a larger heat capacity than the object to be processed, the temperature of the mounting table is raised. Therefore, even if the heating rate is increased at the time of heating, the delay in the temperature rise of the mounting table with respect to the temperature rise of the workpiece is extremely small or substantially eliminated. Is increased. As a result, for example, when the object to be processed is a silicon wafer, it is possible to suppress the occurrence of slip, which is a crystal defect.

According to another aspect of the present invention, there is provided a heat treatment apparatus according to the above invention, wherein a plurality of heat radiation lamps are used as heating means, and the light transmission window faces each of the plurality of heat radiation lamps. It is characterized in that the part constitutes a convex lens part formed in a convex shape toward the processing space side. In this case, for example, a heat radiation lamp is provided at the focal point of the concave lens portion.

According to the present invention, the irradiation area of the heat radiation lamp is narrowed by providing the convex lens portion, so that the directivity of each heat radiation lamp is improved. Therefore, for example, the irradiation area of each heat radiation lamp is independent. Or if they overlap with each other, the degree is small. Therefore, it is easy to adjust the illuminance distribution on the object.

[0013]

FIG. 1 is a longitudinal sectional view showing an embodiment of a heat treatment apparatus according to the present invention. Reference numeral 2 denotes a processing container for partitioning a processing space of the object to be processed, which is made of, for example, aluminum (A5052), and has a flat inner processing surface having a circular cross section and a top opening of the processing container main body 20. And a light transmitting window 6 described later provided so as to hermetically close the portion. The peripheral edge of the bottom of the processing container 2 is formed as a ring-shaped groove portion 21, and an inner ring portion 31 is provided in the groove portion 21. The inner ring portion 31 is rotatably held on the inner wall of the groove portion 21 about a vertical axis via a bearing portion 41. The inner ring portion 31 has a structure in which an upper member (support ring) 31a, which is a support ring for supporting the mounting table 22, which will be described later, and a lower member 31b are connected. For example, the upper member 31a made of opaque quartz (SiO2) is used. At the upper end, a ring-shaped mounting table 22 made of, for example, silicon carbide (SiC) for holding a peripheral portion of the wafer W to be processed is provided, and the mounting table 22 is integrated with the inner ring portion 31. To rotate.

On the other hand, the housing 2 forming the groove 21
Part 3 extends downward, and an outer ring portion 32 is rotatably held around the vertical axis outside the housing 23 via, for example, bearing portions 42 and 43 provided in two stages, upper and lower. .

The lower member 31b (inner ring portion 31) and the outer ring portion 32 are provided with magnetic pole portions 33 and 34, respectively.
4 are arranged inside and outside to constitute a magnetic coupling. A gear portion 35 is formed on the outer peripheral surface of the outer ring portion 32. The gear portion 35 meshes with a gear portion 37 of a stepping motor 36 which is a driving portion, and the outer ring portion 32 is driven by the stepping motor 36. Are configured to rotate.

Returning to FIG. 1, a supply path 44 for a purge gas, for example, nitrogen (N 2) gas, is formed in a portion of the processing vessel near the outside of the housing 23 that forms the groove 21. It communicates directly above the bearing 41 at 21. Also, the inner main body portion 23 of the groove 21
, A plurality of purge gas exhaust passages 45 are formed, for example, in the circumferential direction. The purge gas enters the groove 21 from the gas supply pipe (not shown) via the supply path 44, passes through the bearing 41, and is exhausted from the exhaust pipe (not shown) via the exhaust path 45.

A temperature detecting means 25, for example, a plurality of radiation thermometers, for measuring the temperature of the wafer W from the back side is provided on a bottom plate 24 constituting the bottom of the processing vessel 2 below the wafer W. Inserted, for example, wafer W
Are arranged in the radial direction so that the temperature can be measured at a plurality of locations from the center to the outer edge. Although not shown, the bottom plate 24 is also provided with lift pins for pushing up the wafer W and transferring the wafer W to and from a transfer arm outside the processing container 2.

On the side wall slightly above the wafer W of the processing container 2, there is provided a gas supply path 26 which is, for example, a horizontally elongated slit-shaped gas supply section for supplying a processing gas from a gas supply source (not shown), and a processing gas. An exhaust path 27 for exhausting air is formed at a position facing each other. The exhaust path 27 is connected to an exhaust pipe 29 via an exhaust chamber 28 protruding outward from a side wall of the processing container 2.

Next, the upper side of the processing container 2 will be described. A heating unit 5 is provided at the ceiling so as to face the surface of the wafer W mounted on the mounting table 22. A light transmitting window 6 is provided in a space between the wafer 5 and the wafer W.

The heating unit 5 is, for example, larger than the wafer W. The heating unit 5 is a heating means for irradiating the wafer W with light to heat it. And a reflecting plate 52 provided to surround the side surface and having a circular cross section. In the figure, reference numeral 53 denotes a housing housing the power supply system of the heat radiation lamp 51.

As the heat radiation lamp 51, for example, a halogen lamp is used. The heat radiation lamp 51 has the same center position and forms a plurality of substantially annular light-emitting regions having different sizes. In this example, a plurality of concentric circles having different radii are arranged around a point corresponding to the center point of the wafer W.

For example, when the reflection plate 52 is viewed from the wafer W side in this arrangement, as shown in FIG. 2, an arc-shaped heat source having a shape corresponding to an arc obtained by dividing the circumference of a predetermined circle into a plurality of circles as shown in FIG. The radiation lamps 51 are arranged in the circumferential direction to form a ring-shaped lamp having a predetermined radius. For example, a plurality of the ring-shaped lamps are spaced from the center O of the reflection plate 52 by a predetermined distance in the radial direction. They are arranged to draw concentric circles. In the figure, reference numeral 54 denotes a power supply unit extending vertically from both ends of the heat radiation lamp 51, and the other end of the power supply unit 54 is connected to a housing 53.
It is housed in an internal power supply system (see FIG. 1).

Such a heat radiation lamp 51 is provided on the reflecting plate 5.
2 is provided in a concave portion 55 formed in the same. That is, a ring-shaped recess 5 having a substantially semicircular cross section is formed on the surface of the reflection plate 52.
5 are formed so as to draw a plurality of concentric circles having different radii at positions corresponding to the heat radiation lamp 51, and the heat radiation lamp 51 is provided in each of these concave portions 55, so that the heating unit 5 It is configured. The reflection plate 52 is formed of a material that reflects light emitted from the heat radiation lamp 51, for example, gold plating, and the shape of the concave portion 55 is such that light from the heat radiation lamp 51 is formed on the inner surface of the concave portion 55. Reflected wafer W on mounting table 22
Since it is formed so as to be directed to the side, both the light of the heat radiation lamp 51 and the reflected light of the concave portion 55 are radiated downward.

Next, the light transmission window 6 will be described.
The light transmission window 6 is a plate-like body made of, for example, quartz, and is provided to face the wafer W mounted on the mounting table 22. The shape of the light transmitting window 6 is such that the entire surface is flat (flat surface) on the upper surface side, but a processing space (a space sandwiched between the light transmitting window 6 and the wafer W) is provided over the entire periphery on the lower surface side. A convex lens portion 61 protruding to the side is formed. The convex lens portion 61 is for optically refracting light emitted from a portion above the mounting table 22, for example, for bringing light rays going to the outside of the wafer W to the inside,
For example, it is provided so as to be located almost directly above the mounting table 22.

Next, the operation of the above embodiment will be described. First, a wafer (silicon wafer) W is transferred to the mounting table 22 from a transfer arm (not shown) loaded from a transfer port (not shown) of the processing container 2. Then stepping motor 3
6 is driven to rotate the outer ring portion 32. At this time, since a magnetic force acts between the magnetic pole portion 34 of the outer ring portion 32 and the magnetic pole portion 33 of the inner ring portion 31 (the lower member 31b), the magnetic pole portion 33 is attracted to the magnetic pole portion 34 and the inner ring portion 31 also rotates. Thus, the wafer W rotates.

On the other hand, power is supplied to each heat radiation lamp 51,
As a result, the wafer W is heated, and an inert gas such as an N2 gas, which is a processing gas, is supplied from the gas supply path 26. In this way, while rotating the wafer W at, for example, 90 rpm, the temperature of the wafer W is increased to, for example, 1000 ° C. at a temperature increasing rate of, for example, 150 ° C./min, and the annealing is performed while maintaining this temperature for a predetermined time. After a lapse of a predetermined time, the power supply to each heat radiation lamp 51 is stopped to lower the temperature of the wafer W, and the stepping motor 36 is stopped. The processed wafer W is unloaded from the processing chamber 2 by a transfer arm (not shown).

Here, in a flat region other than the peripheral portion of the light transmission window 6, light emitted from the heat radiation lamp 51 and the reflection plate 52 is transmitted to the entrance side and the exit side in accordance with the incident angle of the light transmission window 6. Although the optical axis shifts, it goes substantially straight, and on the wafer W,
An almost uniform illuminance distribution according to the arrangement pattern of the heat radiation lamps 51 is formed. On the other hand, the light incident on the convex lens portion 61 formed on the peripheral edge side of the light transmission window 6 is refracted, so that the light going outside the mounting table 22 is brought inside. This situation will be schematically described with reference to FIG.

In this figure, the refractive index of quartz for infrared rays is 1.45 and the critical angle is 42 degrees, and the optical path is calculated. The dotted line indicates that the convex lens portion 61 is not formed in the light transmission window 6. The solid line indicates the optical path when the convex lens portion 61 is provided. Now, the mounting table 22
Attention is paid to a point P on an extension line extending radially outward from the peripheral edge of the heat radiation lamp 51 from the outermost to the fifth.
The line connecting each center to the point P is an optical path from each center to the point P when the convex lens portion 61 is not provided. However, in order to simplify the model, refraction at the flat portion of the light transmission window 6 is neglected.

When the convex lens portion 61 is provided, light traveling from each center toward the point P enters the convex lens portion 61 from the flat upper surface side of the light transmission window 6 and is refracted at the incident portion. The refracted light travels to the boundary surface 62 between the convex lens portion 61 and the processing space 60, and is totally reflected if the angle of incidence on the boundary surface 62 is equal to or greater than the critical angle. It goes out to the side 60 and reaches the point Q on the outer edge of the mounting table 22. That is, the light reaching the point P by providing the convex lens portion 61 is moved inward by the distance d1.

According to the above-described embodiment, since the convex lens portion 61 is provided at the peripheral portion of the light transmitting window 6, the light radiated to the outside of the mounting table 22 is refracted so far.
, The amount of heat radiation reaching the mounting table 22 at the time of temperature rise is increased. Therefore, even if the heating rate is increased at the time of heating, the delay in the heating of the mounting table 22 with respect to the heating of the wafer W is extremely small or substantially eliminated, so that the uniformity of the in-plane temperature of the wafer W is improved. As a result, it is possible to suppress the occurrence of slips while securing a high throughput by increasing the heating rate. In addition, since the radiant heat which has been detached from the mounting table 22 heats the mounting table 22, there is an effect that energy can be effectively used.

Further, since the amount of light that escapes outside the mounting table 22 is reduced, the problem that stray light enters the temperature detecting means 25 can also be solved. That is, when opaque quartz is used for the upper member (support ring) 31a of the inner ring portion 31 as in this example, light incident from a gap outside the mounting table 22 passes through the upper member 31a and is connected to the wafer W and the bottom plate. In this embodiment, when the light enters the gap between the bottom plate 24 and the wafer W, the reflected light enters the temperature detection means 25 and the temperature detection value becomes inaccurate.
Since the amount of stray light that enters the gap between the sensor and the sensor is small, the temperature can be detected with high accuracy.

Although this embodiment has an effect of accelerating the temperature rise of the mounting table 22, the present invention is also effective for an apparatus having a structure in which the mounting table does not protrude outside the wafer W. That is, in this case, for example, since the temperature of the wall of the processing container is lower than the temperature of the wafer W, the amount of heat radiation at the peripheral portion of the wafer W is larger than that at the central portion. Although delayed, the provision of the convex lens portion 61 on the peripheral portion of the light transmitting window 6 increases the amount of heat radiation to the peripheral portion as described above, and increases the in-plane temperature uniformity even when the heating rate is increased. effective. Therefore, the present invention is not limited to the structure in which the peripheral portion of the wafer W is held by the mounting table.

Next, a second embodiment according to the present invention will be described. The device of FIG. 4 showing this embodiment is obtained by changing the shape of the light transmission window 6 in the above-described first embodiment. The light transmission window 6 has a flat upper surface side, but a lower surface side. Is formed with a convex lens portion 61 protruding toward the processing space 60 at a portion facing each heat radiation lamp 51. The optical path from the heat radiation lamp 51 to the wafer W in such an apparatus will be described with reference to FIG. 5. In the example of FIG. 5, the center of the heat radiation lamp 51 is located at the focal position of the convex lens portion 61 (61a). positioned. Therefore, the light emitted from the heat radiation lamp 51a is substantially parallel as shown by the solid line in the figure. However, in fact lamp 5
The light path diagram becomes complicated because the outer surface of the light source 1 is a light source. However, for the sake of convenience, a simple model is described here with the heat radiation lamp 51 as a point light source.

The dotted line in FIG. 5 indicates that the light transmitting window 6 is
This is an optical path in the case of a flat plate without providing 1, and as can be seen from this figure, the irradiation area of the heat radiation lamp 51 (51a) is narrowed by providing the convex lens portion 61.
Therefore, the directivity of each heat radiation lamp 51 (specifically, the directivity of each unit in which each heat radiation lamp 51 and the reflection plate 52 are combined) is improved, and, for example, the irradiation area of each heat radiation lamp 51 is independent. Or the degree of overlap decreases, for example, the temperature detecting means 25
In the case where the illuminance distribution is controlled such that the illuminance is increased for the portion provided with, the shape of the reflector 52 of the unit corresponding to the region and the amount of light emitted from the heat radiation lamp 51 may be adjusted. Adjustment work becomes easy.

Although the light transmitting window 6 in the first and second embodiments described so far has a flat top surface, for example, as shown in FIG. 6 and FIG. Upper surface portion 63 of convex lens portion 61 formed on
May be used, for example, curved along the lower surface portion 62 of the convex lens portion 61, and the same effect as in the above-described embodiment can be obtained by such a shape. In the present invention, not only one light transmission window 6 is used but also a structure in which a plurality of, for example, two light transmission windows 6 are overlapped and have the same optical function as the above-described convex lens portion 61, for example, A convex lens portion may be formed in each light transmission window 6.

In the above description, the shape of the heat radiation lamp is not limited to the above-described double-ended lamp which is bent and arranged in a ring shape. For example, a plurality of straight tube lamps are arranged in parallel and the entire surface of the wafer W is formed. May be heated. The shape of the light transmission window 6 in this case is
For example, as shown in FIG. 8, one having a convex lens portion 61 formed in accordance with the shape of each lamp can be used. Note that FIG. 8 is shown upside down for convenience of explanation.

Further, the present invention comprises, for example, a terminal on the upper side,
It is also possible to apply the present invention to a device provided with a large number of single-ended radiation lamps, for example, of a substantially spherical or egg-shaped type that swells downward, and an embodiment in this case is shown in FIG. As shown in FIGS. 9A and 9B, the heat radiation lamp 71
Are arranged along the respective circumferences of a plurality of concentric circles having different radii from each other, for example, in a plane facing the wafer W, such that the tip in the light emitting direction faces the wafer W side.
At this time, the heat radiation lamp 71 is provided in a concave portion 73 formed in the reflection plate 72 so as to surround the back and side surfaces of the heat radiation lamp 71. The light transmission window 6 in this case is provided with each radiation lamp 71 as shown in FIG.
A convex lens portion 61 is formed at a portion opposed to. . Note that FIG. 9C is also shown upside down for the same reason as in FIG. 8 described above.

When the pressure in the processing space is reduced, the force applied to the light transmitting window 61 may be reduced by bending the light transmitting window 61 toward the processing space or on the opposite side. In this case, the present invention can be applied.
Will be shown below. In this example, the heat radiation lamps 81 are arranged, for example, along the curved light transmission windows 61, and the distance between each heat radiation lamp 81 and the light transmission windows 61 is equalized.

In the present invention, the heat radiation lamp is fixed,
Although the wafer W is rotated, a heat radiation lamp may be rotated, and the heat treatment is not limited to the annealing process, but may be a CVD process or the like.

[0040]

As described above, according to the present invention, since the light from the heat radiation lamp toward the outside of the object to be processed is brought inside by the convex lens portion, the heat radiation energy can be effectively used. Further, for example, even when the heating rate is increased at the time of heating, the uniformity of the in-plane temperature of the object to be processed is increased, and for example, when the object to be processed is a silicon wafer, occurrence of slip which is a crystal defect can be suppressed. .

According to another aspect of the present invention, the provision of the convex lens portion narrows the irradiation area of the heat radiation lamp.
The directivity of each heat radiation lamp is improved, which makes it easy to adjust the illuminance distribution on the object to be processed.

[Brief description of the drawings]

FIG. 1 is a sectional view illustrating an embodiment of a heat treatment apparatus according to the present invention.

FIG. 2 is a plan view showing an example of a heating unit used in the heat treatment apparatus.

FIG. 3 is an explanatory diagram for explaining an operation of the heat treatment apparatus.

FIG. 4 is a sectional view illustrating another embodiment of the heat treatment apparatus according to the present invention.

FIG. 5 is an explanatory diagram for explaining an operation in the other embodiment.

FIG. 6 is a sectional view showing another example of the light transmission window used in the heat treatment apparatus.

FIG. 7 is a cross-sectional view showing still another example of the light transmission window used in the heat treatment apparatus.

FIG. 8 is a schematic perspective view showing an example of a light transmission window when a linear radiation lamp is used for a heating unit.

FIG. 9 is an explanatory view showing an example of a heating unit when a single-ended radiation lamp is used and a light transmission window when the heating unit is used.

FIG. 10 is a sectional view showing still another example of the light transmission window used in the heat treatment apparatus.

FIG. 11 is a sectional view showing a conventional single-wafer heat treatment apparatus.

[Explanation of symbols]

 W Wafer 2 Processing container 22 Mounting table 24 Bottom 25 Temperature detecting means 26 Gas supply unit 5 Heating unit 51, 71, 81 Radiation lamp 52 Reflecting plate 55 Depression 6 Light transmission window 60 Processing space 61 Convex lens

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 CA04 CA12 FA10 GA02 KA24 KA37 KA46 LA15 5F031 CA02 HA02 MA28 MA30 5F045 AA03 AA20 AF03 BB13 DP03 DP04 EK12

Claims (9)

[Claims] 1. A processing container for partitioning a processing space for processing an object to be processed, a mounting table provided in the processing container for mounting the object to be processed, and a processing table for processing the object to be processed. A gas supply unit for supplying a processing gas for performing processing into the processing container, a light transmission window provided to face the object on the mounting table, and forming a part of the processing container; Heating means comprising a heat radiation lamp provided on the side opposite to the processing space, and the light transmission window includes a convex lens portion having a peripheral portion formed in a convex shape toward the processing space side. A heat treatment apparatus, comprising: 2. The heat treatment apparatus according to claim 1, wherein the mounting table holds a peripheral portion of the object to be processed. 3. The heat treatment apparatus according to claim 2, wherein the mounting table has a larger heat capacity than the object to be processed. 4. The object to be processed is a silicon wafer, and the material of the mounting table is silicon carbide.
The heat treatment apparatus according to the above. 5. A processing container for partitioning a processing space for processing an object to be processed, a mounting table provided in the processing container for mounting an object to be processed, and a processing table for processing the object to be processed. A gas supply unit for supplying a processing gas for performing processing into the processing container, a light transmission window provided to face the object on the mounting table, and forming a part of the processing container; Heating means comprising a plurality of heat radiation lamps provided on the side opposite to the processing space, and the light transmission window has a portion facing each of the plurality of heat radiation lamps on the processing space side. A heat treatment apparatus comprising a convex lens portion formed in a convex shape toward the surface. 6. The heat treatment apparatus according to claim 5, wherein the heat radiation lamp is provided at a focal point of the concave lens portion. 7. The heat treatment apparatus according to claim 1, wherein the mounting table rotates around a substantially vertical axis relative to the heat radiation lamp. 8. The heat treatment apparatus according to claim 1, wherein the heating means comprises a plurality of arc-shaped heat radiation lamps arranged concentrically. 9. The heating means is an assembly in which a plurality of heat radiation lamps are arranged in an island shape, or a plurality of straight tube heat radiation lamps are arranged in parallel. Item 8. The heat treatment apparatus according to any one of Items 1 to 7.