HK1208915B - Substrate processing device, device manufacturing system and method for manufacturing device - Google Patents

Description

Substrate processing apparatus, device manufacturing system, and device manufacturing method

Technical Field

The invention relates to a substrate processing apparatus, a device manufacturing system and a device manufacturing method.

Background

Conventionally, as a substrate processing apparatus, an exposure apparatus in which a projection optical system is disposed between a mask and a plate (substrate) is known (for example, see patent document 1). The projection optical system comprises a lens group, a plane reflector, two polarization beam splitters, two reflectors, a lambda/4 wave plate and a field stop. In this exposure apparatus, projection light of S-polarized light irradiated to the projection optical system through the mask is reflected by one polarization beam splitter. The reflected projection light of the S-polarized light passes through the λ/4 plate to be converted into circularly polarized light. Projection light of the circularly polarized light is reflected to the plane mirror through the lens group. The reflected projection light of the circularly polarized light passes through the λ/4 plate to be converted into P-polarized light. The projection light of the P-polarized light is transmitted through the other polarization beam splitter and reflected by one mirror. The projection light of the P-polarized light reflected by one mirror forms an intermediate image in the field stop. The projection light of the P-polarized light passing through the field stop is reflected by the other mirror, and enters the one polarization beam splitter again. The projection light of the P-polarized light is transmitted through one polarization beam splitter. The projection light of the P-polarized light after transmission passes through the λ/4 plate and is converted into circularly polarized light. Projection light of circularly polarized light passes through the lens group and is reflected by the plane mirror. The reflected projection light of the circularly polarized light passes through the λ/4 plate to be converted into S-polarized light. The projection light of the S-polarized light is reflected by the other polarization beam splitter and reaches the panel.

Documents of the prior art

Patent document

Patent document 1: japanese laid-open patent publication No. 8-64501

Disclosure of Invention

Here, a part of the projection light reflected and transmitted by the polarization beam splitter becomes leakage light. That is, a part of the projection light reflected by the polarization beam splitter is separated, and a part of the separated projection light becomes leakage light and is transmitted from the polarization beam splitter, or a part of the projection light transmitted by the polarization beam splitter is separated, and a part of the separated projection light becomes leakage light and is reflected by the polarization beam splitter. In this case, there is a possibility that leakage light forms an image on the substrate, thereby forming a defective image on the substrate. In this case, a projected image is formed by the projected light on the substrate, and a defective image is formed by leakage light, so that double exposure may occur.

The present invention has been made in view of the above problems, and an object thereof is to provide a substrate processing apparatus, a device manufacturing system, and a device manufacturing method, which can reduce the influence of leakage light on a projected image formed on a substrate and appropriately project the projected image on the substrate.

According to the 1 st aspect of the present invention, there is provided a substrate processing apparatus comprising: a projection optical system which forms an intermediate image of a pattern on a predetermined intermediate image plane by 1 st projection light of the pattern from a mask member, and forms a projection image of the intermediate image, which is a re-image of the pattern, on a predetermined substrate by turning back 2 nd projection light traveling from the intermediate image plane toward the substrate so as to pass through the projection optical system again; and a light amount reducing unit that reduces an amount of light projected onto the substrate as leak light by a part of the 1 st projection light, the projection optical system including: a partial optical system for forming the intermediate image by receiving the 1 st projection light from the pattern; and a light guide optical system that guides the 1 st projection light emitted from the partial optical system to the intermediate image plane and guides the 2 nd projection light from the intermediate image plane to the partial optical system again, wherein the partial optical system re-forms the 2 nd projection light from the intermediate image plane and forms the projection image on the substrate.

According to a second aspect of the present invention, there is provided a device manufacturing system comprising: a substrate processing apparatus according to claim 1 of the present invention; and a substrate supply device for supplying the substrate to the substrate processing device.

According to a third aspect of the present invention, there is provided a device manufacturing method comprising: performing projection exposure on the substrate using the substrate processing apparatus according to claim 1 of the present invention; and forming a pattern of the mask member by processing the substrate subjected to the projection exposure.

Effects of the invention

According to an aspect of the present invention, there is provided a substrate processing apparatus, a device manufacturing system, and a device manufacturing method capable of reducing the amount of leakage light projected onto a substrate and appropriately projecting a projection image onto the substrate.

Drawings

Fig. 1 is a diagram showing a configuration of a device manufacturing system according to embodiment 1.

Fig. 2 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to embodiment 1.

Fig. 3 is a diagram showing the arrangement of the illumination area and the projection area of the exposure apparatus shown in fig. 2.

Fig. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in fig. 2.

Fig. 5 is a diagram of a circular full imaging field of view based on a projection optics assembly spread out on the YZ plane.

Fig. 6 is a flowchart showing a device manufacturing method according to embodiment 1.

Fig. 7 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus according to embodiment 2.

Fig. 8 is a diagram showing a configuration of a projection optical system of the exposure apparatus according to embodiment 3.

Fig. 9 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to embodiment 4.

Detailed Description

A mode (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. The constituent elements described below include elements that can be easily conceived by those skilled in the art and substantially the same elements. The following constituent elements can be appropriately combined. Various components can be omitted, replaced, or changed without departing from the scope of the present invention.

[ embodiment 1 ]

The substrate processing apparatus according to embodiment 1 is an exposure apparatus that performs exposure processing on a substrate, and the exposure apparatus is incorporated in a device manufacturing system that performs various processes on an exposed substrate to manufacture a device. First, a device manufacturing system will be explained.

< device manufacturing System >

Fig. 1 is a diagram showing a configuration of a device manufacturing system according to embodiment 1. The device manufacturing system 1 shown in fig. 1 is a manufacturing line (flexible display manufacturing line) that manufactures a flexible display as a device. As the flexible display, for example, an organic EL display or the like is available. The device manufacturing system 1 is a so-called Roll-to-Roll (Roll to Roll) system in which a flexible substrate P is fed from a supply Roll FR1 that rolls the substrate P into a Roll shape, various kinds of processing are continuously performed on the fed substrate P, and the processed substrate P is wound as a flexible device around a recovery Roll FR 2. In the device manufacturing system 1 according to embodiment 1, there is shown an example in which the substrate P as a film-like sheet is fed out from the supply roller FR1, and the substrate P fed out from the supply roller FR1 is wound around the recovery roller FR2 after passing through n processing apparatuses U1, U2, U3, U4, U5, and … Un in this order. First, a substrate P to be processed in the device manufacturing system 1 will be described.

For example, a resin film, a foil (foil) made of a metal such as stainless steel or an alloy, or the like is used as the substrate P. Examples of the material of the resin film include one or more of a polyethylene resin, a polypropylene resin, a polyester resin, an ethylene vinyl alcohol copolymer resin, a polyvinyl chloride resin, a cellulose resin, a polyamide resin, a polyimide resin, a polycarbonate resin, a polystyrene resin, and a vinyl acetate resin.

It is preferable that the substrate P is, for example, selected to have a thermal expansion coefficient that is not so significantly large that the amount of deformation due to heat in various processes performed on the substrate P can be practically ignored. The thermal expansion coefficient can be set to be smaller than a threshold value corresponding to a process temperature or the like by mixing an inorganic filler in the resin film, for example. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, silicon oxide, or the like. The substrate P may be a single layer of an extra thin glass having a thickness of about 100 μm manufactured by a float method or the like, or may be a laminate in which the above resin film, foil, or the like is bonded to the extra thin glass.

The substrate P having the above-described structure is wound into a roll shape to form a supply roll FR1, and the supply roll FR1 is attached to the device manufacturing system 1. The device manufacturing system 1 mounted with the supply roller FR1 repeatedly executes various processes for manufacturing devices on the substrate P sent out from the supply roller FR 1. Therefore, the processed substrate P is in a state where a plurality of devices are connected. That is, the substrate P fed from the supply roller FR1 becomes a substrate for simultaneous processing of a plurality of substrates. The substrate P may be a member whose surface is modified and activated by a predetermined pretreatment in advance, or a member having a fine partition wall structure (uneven structure) for precise patterning formed on the surface.

The processed substrate P is wound into a roll shape and collected as a collecting roll FR 2. The recovery roller FR2 is attached to a cutting device not shown. The dicing apparatus mounted with the recovery roller FR2 divides (cuts) the processed substrate P into a plurality of devices for each device. The substrate P has a dimension in the width direction (direction to be a short side) of about 10cm to 2m, and a dimension in the longitudinal direction (direction to be a long side) of 10m or more, for example. The size of the substrate P is not limited to the above size.

Next, a device manufacturing system will be explained with reference to fig. 1. In fig. 1, the X direction, the Y direction, and the Z direction are orthogonal rectangular coordinate systems. The X direction is a direction connecting the supply roller FR1 and the recovery roller FR2 in the horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane. The Y direction is the axial direction of the supply roller FR1 and the recovery roller FR 2. The Z direction is a direction (vertical direction) orthogonal to the X direction and the Y direction.

The device manufacturing system 1 includes a substrate supply device 2 that supplies substrates P, processing apparatuses U1 to Un that perform various processes on the substrates P supplied from the substrate supply device 2, a substrate recovery device 4 that recovers the substrates P processed by the processing apparatuses U1 to Un, and a host controller 5 that controls the respective devices of the device manufacturing system 1.

A supply roller FR1 is rotatably attached to the substrate supply device 2. The substrate supply apparatus 2 includes a drive roller R1 for feeding out the substrate P from a supply roller FR1 mounted thereon, and an edge position controller EPC1 for adjusting the position of the substrate P in the width direction (Y direction). The driving roller R1 rotates while pinching both front and back surfaces of the substrate P, and feeds out the substrate P from the supply roller FR1 in the conveyance direction of the recovery roller FR2, thereby supplying the substrate P to the processing apparatuses U1 to Un. At this time, the edge position controller EPC1 corrects the position of the substrate P in the width direction by moving the substrate P in the width direction so that the position of the end (edge) of the substrate P in the width direction is located within a range of about ± ten and several μm to several tens μm with respect to the target position.

A recovery roller FR2 is rotatably attached to the substrate recovery apparatus 4. The substrate recovery apparatus 4 includes a drive roller R2 for pulling the processed substrate P toward the recovery roller FR2, and an edge position controller EPC2 for adjusting the position of the substrate P in the width direction (Y direction). The substrate recovery apparatus 4 rotates the driving rollers R2 while sandwiching both front and back surfaces of the substrate P, and winds the substrate P by pulling the substrate P in the conveyance direction and rotating the recovery rollers FR 2. In this case, the edge position controller EPC2 is configured similarly to the edge position controller EPC1, and corrects the position of the substrate P in the width direction so as not to cause unevenness in the width direction at the end (edge) of the substrate P in the width direction.

The processing device U1 is a coating device that coats the photosensitive functional liquid on the surface of the substrate P supplied from the substrate supply device 2. Examples of the photosensitive functional liquid include a resist, a photosensitive silane coupling agent, a UV curable resin solution, and other solutions for photosensitive plating catalysis. The processing apparatus U1 includes a coating mechanism Gp1 and a drying mechanism Gp2 in this order from the upstream side in the conveyance direction of the substrate P. The coating mechanism Gp1 includes a platen DR1 for winding the substrate P around, and a coating roller DR2 facing the platen DR 1. The coating mechanism Gp1 nips the substrate P by the platen roller DR1 and the coating roller DR2 in a state where the supplied substrate P is wound around the platen roller DR 1. The coating mechanism Gp1 applies the photosensitive functional liquid by the coating roller DR2 while moving the substrate P in the conveyance direction by rotating the platen roller DR1 and the coating roller DR 2. The drying mechanism Gp2 blows drying air such as hot air or dry air to remove solute (solvent or water) contained in the photosensitive functional liquid and dries the substrate P coated with the photosensitive functional liquid, thereby forming a photosensitive functional layer on the substrate P.

The processing apparatus U2 is a heating apparatus that heats the substrate P conveyed from the processing apparatus U1 to a predetermined temperature (for example, about several tens to 120 degrees celsius) in order to stabilize the photosensitive functional layer formed on the surface of the substrate P. The processing apparatus U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the substrate P conveyance direction. The heating chamber HA1 is provided therein with a plurality of rollers and a plurality of air turn bars (air turn bars) which constitute a conveyance path of the substrate P. The rollers are rotatably provided on the back surface of the substrate P, and the air levers are provided on the front surface of the substrate P in a non-contact state. The rollers and the air deflector bars are arranged to form a serpentine conveyance path so as to extend the conveyance path of the substrate P. The substrate P passing through the heating chamber HA1 is heated to a predetermined temperature while being conveyed along a serpentine conveyance path. The cooling chamber HA2 cools the substrate P to the ambient temperature so that the temperature of the substrate P heated in the heating chamber HA1 coincides with the ambient temperature of the subsequent process (the processing apparatus U3). The cooling chamber HA2 HAs a plurality of rollers provided therein, and the plurality of rollers are arranged to form a meandering conveyance path so as to extend the conveyance path of the substrate P, similarly to the heating chamber HA 1. The substrate P passing through the cooling chamber HA2 is cooled while being conveyed along the meandering conveyance path. A driving roller R3 is provided on the downstream side of the cooling chamber HA2 in the conveyance direction, and the driving roller R3 rotates while pinching the substrate P passing through the cooling chamber HA2, thereby supplying the substrate P toward the processing apparatus U3.

The processing apparatus (substrate processing apparatus) U3 is an exposure apparatus that projects and exposes a pattern of a circuit, a wiring, or the like for a display on a substrate (photosensitive substrate) P having a photosensitive functional layer formed on the surface thereof, which is supplied from the processing apparatus U2. As will be described in detail later, the processing apparatus U3 projects and exposes the substrate P with a projection beam obtained by irradiating the reflective mask M with an illumination beam and reflecting the illumination beam on the mask M. The processing apparatus U3 includes a drive roller R4 that feeds the substrate P supplied from the processing apparatus U2 to the downstream side in the conveyance direction, and an edge position controller EPC3 that adjusts the position of the substrate P in the width direction (Y direction). The driving rollers R4 rotate while sandwiching both front and back surfaces of the substrate P, and feed the substrate P to the downstream side in the conveyance direction, thereby supplying the substrate P toward the exposure position. The edge position controller EPC3 is configured similarly to the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the width direction of the substrate P at the exposure position becomes the target position. The processing apparatus U3 includes two sets of driving rollers R5 and R6 that feed the substrate P to the downstream side in the conveyance direction while giving slack to the substrate P after exposure. The two sets of driving rollers R5 and R6 are disposed at a predetermined interval in the conveyance direction of the substrate P. The driving roller R5 rotates while nipping the upstream side of the substrate P being conveyed, and the driving roller R6 rotates while nipping the downstream side of the substrate P being conveyed, thereby supplying the substrate P to the processing apparatus U4. At this time, since the substrate P is given slack, it is possible to absorb the variation in the conveyance speed occurring on the downstream side in the conveyance direction from the driving roller R6, and to block the influence of the variation in the conveyance speed on the exposure processing of the substrate P. In the processing apparatus U3, alignment microscopes AM1 and AM2 for detecting alignment marks and the like formed in advance on the substrate P are provided to align (align) an image of a part of the mask pattern of the mask M with the substrate P.

The processing apparatus U4 is a wet processing apparatus that performs wet development processing, electroless plating processing, and the like on the exposed substrate P conveyed from the processing apparatus U3. The processing device U4 includes: 3 processing tanks BT1, BT2, BT3 layered in the vertical direction (Z direction), and a plurality of rollers for conveying the substrate P. The plurality of rollers are disposed to form a conveyance path through which the substrate P sequentially passes from the inside of the 3 processing tanks BT1, BT2, and BT 3. A driving roller R7 is provided on the downstream side of the processing bath BT3 in the conveyance direction, and the driving roller R7 rotates while pinching the substrate P passing through the processing bath BT3, thereby supplying the substrate P to the processing apparatus U5.

Although not shown, the processing apparatus U5 is a drying apparatus that dries the substrate P conveyed from the processing apparatus U4. The processing apparatus U5 adjusts the moisture content of the substrate P subjected to the wet processing in the processing apparatus U4 to a predetermined moisture content. The substrate P dried by the processing apparatus U5 passes through several processing apparatuses and is conveyed to the processing apparatus Un. After the substrate P is processed by the processing apparatus Un, the substrate P is wound up by a recovery roller FR2 of the substrate recovery apparatus 4.

The host controller 5 collectively controls the substrate supply device 2, the substrate recovery device 4, and the plurality of processing devices U1 to Un. The upper control device 5 controls the substrate supply device 2 and the substrate recovery device 4 to transfer the substrate P from the substrate supply device 2 to the substrate recovery device 4. The host control device 5 controls the plurality of processing devices U1 to Un while synchronizing the conveyance of the substrate P, and executes various processes on the substrate P.

< Exposure apparatus (substrate processing apparatus) >

Next, the configuration of an exposure apparatus (substrate processing apparatus) as the processing apparatus U3 according to embodiment 1 will be described with reference to fig. 2 to 4. Fig. 2 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to embodiment 1. Fig. 3 is a diagram showing the arrangement of the illumination area and the projection area of the exposure apparatus shown in fig. 2. Fig. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure apparatus shown in fig. 2.

The exposure device U3 shown in fig. 2 is a so-called scanning exposure device that projects and exposes an image of a mask pattern formed on the outer peripheral surface of a cylindrical mask M onto the surface of a substrate P while conveying the substrate P in a conveying direction (scanning direction). In fig. 2 and 3, the orthogonal coordinate system in the X direction, the Y direction, and the Z direction is the same as that in fig. 1.

First, a mask (mask member) M used in the exposure apparatus U3 will be described. The mask M is a reflective mask using a cylindrical body made of metal, for example. The mask M is formed on a cylindrical body having an outer peripheral surface (circumferential surface) with a curvature radius Rm centered on a1 st axis AX1 extending in the Y direction, and has a constant thickness in the radial direction. The peripheral surface of the mask M is a mask surface (pattern surface) P1 on which a predetermined mask pattern (pattern) is formed. The mask surface P1 includes a high reflection portion for reflecting light in a predetermined direction with high efficiency and a reflection suppressing portion for not reflecting light in the predetermined direction or reflecting light with low efficiency, and the mask pattern is formed by the high reflection portion and the reflection suppressing portion. Since such a mask M is a metal cylindrical body, it can be manufactured at low cost, and by using a high-precision laser beam drawing device, a mask pattern (including various patterns for a panel, a reference mark for alignment, a scale for encoder measurement, and the like) can be formed precisely on the cylindrical outer peripheral surface.

The mask M may be formed with the entire or a part of the panel pattern corresponding to one display device, or may be formed with the panel patterns corresponding to a plurality of display devices. Further, the mask M may have a plurality of panel patterns repeatedly formed in the circumferential direction around the 1 st axis AX1, or may have a plurality of small panel patterns repeatedly formed in the direction parallel to the 1 st axis AX 1. The mask M may be formed with a pattern for a panel of the 1 st display device, a pattern for a panel of the 2 nd display device having a different size from the 1 st display device, or the like. The mask M is not limited to the shape of a cylindrical body as long as it has a circumferential surface with a radius of curvature Rm centered on the 1 st axis AX 1. For example, the mask M may be an arc-shaped plate having a circumferential surface. The mask M may be a thin plate, or a thin plate may be bent to have a circumferential surface.

Next, the exposure apparatus U3 shown in fig. 2 will be described. The exposure apparatus U3 includes a mask holding mechanism 11, a substrate supporting mechanism 12, an illumination optical system IL, a projection optical system PL, and a lower control device 16, in addition to the drive rollers R4 to R6, the edge position controller EPC3, and the alignment microscopes AM1 and AM 2. The exposure device U3 guides the illumination light beam EL1 emitted from the light source device 13 through the illumination optical system IL and the projection optical system PL, and projects the image of the mask pattern of the mask M held by the mask holding mechanism 11 onto the substrate P supported by the substrate support mechanism 12.

The lower control device 16 controls each part of the exposure device U3 to cause each part to execute processing. The lower level controller 16 may be a part or all of the upper level controller 5 of the device manufacturing system 1. The lower-level controller 16 may be a device that is controlled by the upper-level controller 5 and is different from the upper-level controller 5. The lower-level control device 16 includes a computer, for example.

The mask holding mechanism 11 includes a mask holding cylinder (mask holding member) 21 that holds the mask M, and a1 st driving unit 22 that rotates the mask holding cylinder 21. The mask holding cylinder 21 holds the mask M such that the 1 st axis AX1 of the mask M is a rotation center. The 1 st drive unit 22 is connected to the lower position controller 16, and rotates the mask holding cylinder 21 with the 1 st axis AX1 as the center of rotation.

The mask holding mechanism 11 holds the cylindrical mask M by the mask holding cylinder 21, but is not limited to this configuration. The mask holding mechanism 11 may wind and hold the thin-plate-shaped mask M along the outer peripheral surface of the mask holding cylinder 21. The mask holding mechanism 11 may hold the mask M, which is formed with a pattern on the surface of a plate material curved in an arc shape, on the outer peripheral surface of the mask holding cylinder 21.

The substrate support mechanism 12 includes a substrate support cylinder 25 for supporting the substrate P, a2 nd drive unit 26 for rotating the substrate support cylinder 25, a pair of air steering levers ATB1 and ATB2, and a pair of guide rollers 27 and 28. The substrate support cylinder 25 is formed in a cylindrical shape having an outer peripheral surface (circumferential surface) with a radius of curvature Rfa about a2 nd axis AX2 extending in the Y direction. Here, the 1 st axis AX1 and the 2 nd axis AX2 are parallel to each other, and a plane passing through the 1 st axis AX1 and the 2 nd axis AX2 is a center plane CL. A part of the circumferential surface of the substrate support cylinder 25 becomes a support surface P2 for supporting the substrate P. That is, the substrate support drum 25 supports the substrate P by winding the substrate P around the support surface P2. The 2 nd drive unit 26 is connected to the lower position controller 16, and rotates the substrate support cylinder 25 about the 2 nd axis AX2 as a rotation center. The pair of air turning levers ATB1 and ATB2 are provided on the upstream side and the downstream side in the conveyance direction of the substrate P, respectively, with the substrate support tube 25 interposed therebetween. The pair of air steering levers ATB1 and ATB2 are provided on the front surface side of the board P and are disposed below the support surface P2 of the board support cylinder 25 in the vertical direction (Z direction). The pair of guide rollers 27, 28 are provided on the upstream side and the downstream side in the conveyance direction of the substrate P, respectively, with the pair of air turn levers ATB1, ATB2 interposed therebetween. One guide roller 27 of the pair of guide rollers 27, 28 guides the substrate P conveyed from the drive roller R4 to the air turn bar ATB1, and the other guide roller 28 guides the substrate P conveyed from the air turn bar ATB2 to the drive roller R5.

Therefore, the substrate support mechanism 12 guides the substrate P conveyed from the driving roller R4 to the air turn bar ATB1 by the guide roller 27, and guides the substrate P passing through the air turn bar ATB1 to the substrate support tube 25. The substrate support mechanism 12 rotates the substrate support cylinder 25 by the 2 nd drive unit 26, and conveys the substrate P introduced into the substrate support cylinder 25 to the air turn bar ATB2 while supporting the substrate P on the support surface P2 of the substrate support cylinder 25. The substrate support mechanism 12 guides the substrate P conveyed to the air turn lever ATB2 to the guide roller 28 by the air turn lever ATB2, and guides the substrate P passing through the guide roller 28 to the drive roller R5.

At this time, the lower level controller 16 connected to the 1 st drive unit 22 and the 2 nd drive unit 26 rotates the mask holding cylinder 21 and the substrate support cylinder 25 synchronously at a predetermined rotation speed ratio, and thereby repeatedly projects and exposes the image of the mask pattern formed on the mask plane P1 of the mask M continuously onto the surface (curved surface along the circumferential surface) of the substrate P wound around the support plane P2 of the substrate support cylinder 25.

The light source device 13 emits an illumination light beam EL1 for illuminating the mask M. The light source device 13 includes a light source unit 31 and a light guide member 32. The light source unit 31 is a light source that emits light in a predetermined wavelength region suitable for exposure of the photosensitive functional layer on the substrate P and that emits light in an ultraviolet region where the light activity is strong. As the light source unit 31, for example, a lamp light source such as a mercury lamp having a bright line (g line, h line, i line, etc.) in an ultraviolet region, a solid-state light source such as a laser diode or a Light Emitting Diode (LED) having an oscillation peak in an ultraviolet region having a wavelength of 450nm or less, or a gas laser source such as a KrF excimer laser (wavelength 248nm), an ArF excimer laser (wavelength 193nm), or an XeCl excimer laser (wavelength 308nm) that oscillates far ultraviolet light (DUV light) can be used.

Here, the illumination light beam EL1 emitted from the light source device 13 enters a polarization beam splitter PBS described later. In order to suppress energy loss due to separation of the illumination light beam EL1 by the polarization beam splitter PBS, the illumination light beam EL1 is preferably a light beam that substantially reflects all of the incident illumination light beam EL1 in the polarization beam splitter PBS. The polarization beam splitter PBS reflects the beam of the linearly polarized light having the S-polarization and transmits the beam of the linearly polarized light having the P-polarization. Therefore, the light source unit 31 of the light source device 13 preferably emits the following laser light: the illumination light beam EL1 incident on the polarization beam splitter PBS is converted into a laser beam of a linearly polarized light (S-polarized light) beam. In addition, since the laser energy density is high, the illuminance of the light beam projected onto the substrate P can be appropriately ensured.

The light guide member 32 guides the illumination light beam EL1 emitted from the light source unit 31 to the illumination optical system IL. The light guide member 32 is formed of an optical fiber, a relay module (relay module) using a mirror (mirror), or the like. When a plurality of illumination optical systems IL are provided, the light guide member 32 separates the illumination luminous flux EL1 from the light source unit 31 into a plurality of luminous fluxes and guides the plurality of illumination luminous fluxes EL1 to the plurality of illumination optical systems IL. For example, when the light beam emitted from the light source unit 31 is laser light, the light guide member 32 may use a polarization maintaining fiber (polarization plane maintaining fiber) as an optical fiber, and guide the light beam by maintaining the polarization state of the laser light by the polarization maintaining fiber.

Here, as shown in fig. 3, the exposure apparatus U3 of embodiment 1 is assumed to be a so-called multi-lens exposure apparatus. Fig. 3 illustrates a plan view (left view in fig. 3) of the illumination area IR on the reticle M held by the reticle holding cylinder 21 viewed from the-Z side and a plan view (right view in fig. 3) of the projection area PA on the substrate P supported by the substrate support cylinder 25 viewed from the + Z side. Reference symbol Xs in fig. 3 denotes the moving direction (rotation direction) of the mask holding cylinder 21 and the substrate support cylinder 25. The multi-lens exposure apparatus U3 irradiates illumination light beams EL1 to IR6 in a plurality of (for example, 6 in embodiment 1) illumination regions IR1 to IR6 on the mask M, and projects and exposes a plurality of (for example, 6 in embodiment 1) projection regions PA1 to PA6 on the substrate P with a plurality of projection light beams EL2 obtained by reflecting the illumination light beams EL1 in the illumination regions IR1 to IR 6.

First, a plurality of illumination regions IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in the left side of fig. 3, the plurality of illumination regions IR1 to IR6 are arranged in 2 rows in the rotation direction with the center plane CL therebetween, odd-numbered 1 st illumination region IR1, 3 rd illumination region IR3 and 5 th illumination region IR5 are arranged on the mask M on the upstream side in the rotation direction, and even-numbered 2 nd illumination region IR2, 4 th illumination region IR4 and 6 th illumination region IR6 are arranged on the mask M on the downstream side in the rotation direction.

Each of the illumination regions IR1 to IR6 is an elongated trapezoidal (rectangular) region having parallel short sides and long sides extending in the axial direction (Y direction) of the mask M. In this case, the illumination regions IR1 to IR6 of the trapezoidal shape are regions whose short sides are located on the center plane CL side and whose long sides are located outside. The odd-numbered 1 st illumination region IR1, 3 rd illumination region IR3, and 5 th illumination region IR5 are arranged at predetermined intervals in the axial direction. The even-numbered 2 nd illumination region IR2, 4 th illumination region IR4, and 6 th illumination region IR6 are arranged at predetermined intervals in the axial direction. In this case, the 2 nd illumination region IR2 is disposed between the 1 st illumination region IR1 and the 3 rd illumination region IR3 in the axial direction. Similarly, the 3 rd illumination region IR3 is disposed between the 2 nd illumination region IR2 and the 4 th illumination region IR4 in the axial direction. The 4 th illumination region IR4 is disposed between the 3 rd illumination region IR3 and the 5 th illumination region IR5 in the axial direction. The 5 th illumination region IR5 is disposed between the 4 th illumination region IR4 and the 6 th illumination region IR6 in the axial direction. The illumination regions IR1 to IR6 are arranged so that the triangular portions of the diagonal side portions of the illumination regions of adjacent trapezoids overlap (overlap) when viewed in the circumferential direction of the mask M. In embodiment 1, each of the illumination regions IR1 to IR6 may be a trapezoidal region or a rectangular region.

The mask M has a pattern forming region A3 in which a mask pattern is formed and a pattern non-forming region a4 in which no mask pattern is formed. The pattern non-formation region a4 is a region that absorbs the illumination light beam EL1 and is hard to reflect, and is arranged so as to surround the pattern formation region A3 in a frame shape. The 1 st to 6 th illumination regions IR1 to IR6 are arranged so as to cover the entire width of the pattern forming region A3 in the Y direction.

The illumination optical system IL is provided in plural (for example, 6 in embodiment 1) in correspondence with the plural illumination regions IR1 to IR 6. The illumination light beam EL1 from the light source device 13 is incident on each of the illumination optical systems IL1 to IL 6. The illumination optical systems IL1 to IL6 guide the illumination light beams EL1 incident from the light source device 13 to the illumination areas IR1 to IR6, respectively. That is, the 1 st illumination optical system IL1 guides the illumination luminous flux EL1 to the 1 st illumination area IR1, and similarly, the 2 nd to 6 th illumination optical systems IL2 to IL6 guide the illumination luminous flux EL to the 2 nd to 6 th illumination areas IR2 to IR 6. The illumination optical systems IL1 to IL6 are arranged in 2 rows in the circumferential direction of the mask M with the center plane CL therebetween. The illumination optical systems IL1 to IL6 are arranged such that the 1 st illumination optical system IL1, the 3 rd illumination optical system IL3, and the 5 th illumination optical system IL5 are arranged on the side (left side in fig. 2) where the 1 st, 3 rd, and 5 th illumination regions IR1, IR3, and IR5 are arranged, with the center plane CL therebetween. The 1 st illumination optical system IL1, the 3 rd illumination optical system IL3, and the 5 th illumination optical system IL5 are disposed at a predetermined interval in the Y direction. Further, the plurality of illumination optical systems IL1 to IL6 are arranged with the 2 nd, 4 th, and 6 th illumination regions IR2, IR4, and IR6 disposed therebetween (right side in fig. 2) on the side where the 2 nd, 4 th, and 6 th illumination regions IR2, IR4, and IR6 are disposed, respectively, with the center plane CL therebetween, and the 2 nd illumination optical system IL2, the 4 th illumination optical system IL4, and the 6 th illumination optical system IL6 are disposed. The 2 nd illumination optical system IL2, the 4 th illumination optical system IL4, and the 6 th illumination optical system IL6 are disposed at a predetermined interval in the Y direction. In this case, the 2 nd illumination optical system IL2 is disposed between the 1 st illumination optical system IL1 and the 3 rd illumination optical system IL3 in the axial direction. Similarly, the 3 rd illumination optical system IL3 is disposed between the 2 nd illumination optical system IL2 and the 4 th illumination optical system IL4 in the axial direction. The 4 th illumination optical system IL4 is disposed between the 3 rd illumination optical system IL3 and the 5 th illumination optical system IL5 in the axial direction. The 5 th illumination optical system IL5 is disposed between the 4 th illumination optical system IL4 and the 6 th illumination optical system IL6 in the axial direction. The 1 st illumination optical system IL1, the 3 rd illumination optical system IL3, and the 5 th illumination optical system IL5, and the 2 nd illumination optical system IL2, the 4 th illumination optical system IL4, and the 6 th illumination optical system IL6 are arranged symmetrically about the center plane CL as viewed in the Y direction.

Next, the illumination optical systems IL1 to IL6 will be described with reference to fig. 4. Since the illumination optical systems IL1 to IL6 have the same configuration, the 1 st illumination optical system IL1 (hereinafter, simply referred to as the illumination optical system IL) will be described as an example.

In order to illuminate the illumination region IR with uniform illuminance (the 1 st illumination region IR1), the illumination optical system IL employs Kohler illumination (Kohler illumination) in which a light source image (real image or virtual image) generated by the light source device 13 is formed at a pupil position (corresponding to a fourier transform plane) of the illumination optical system IL. The illumination optical system IL is an epi-illumination system using a polarization beam splitter PBS. The illumination optical system IL includes an illumination optical module ILM, a polarization beam splitter PBS, and a 1/4 wave plate 41 in this order from the incident side of an illumination light beam EL1 from the light source device 13.

As shown in fig. 4, the illumination optical module ILM includes a collimator lens 51, a fly-eye lens 52, a plurality of condenser lenses 53, a cylindrical lens 54, an illumination field stop 55, and a plurality of relay lenses 56 in this order from the incident side of the illumination light beam EL1, and is provided on the 1 st optical axis BX 1. The collimator lens 51 is provided on the light emitting side of the light guide member 32 of the light source device 13. The optical axis of the collimator lens 51 is disposed on the 1 st optical axis BX. The collimator lens 51 irradiates the entire incident-side surface of the fly-eye lens 52. The fly-eye lens 52 is provided on the emission side of the collimator lens 51. The center of the exit-side surface of the fly-eye lens 52 is disposed on the 1 st optical axis BX 1. The fly-eye lens 52, which is composed of a plurality of rod lenses or the like, divides the illumination light EL1 from the collimator lens 51 into pieces for each rod lens, generates a plurality of point light source images (condensed points) on the exit side surface of the fly-eye lens 52, and makes the illumination light EL1 divided into pieces by the rod lenses enter the condenser lens 53. In this case, the surface of the fly-eye lens 52 on the emission side for generating the point light source image is arranged such that: the light beam passes from the fly-eye lens 52 through the illumination field stop 55 to reach various lenses of a1 st concave mirror 72 of a projection optical system PL described later, and is optically conjugate with a pupil plane of the projection optical system PL (plm) where the reflection surface of the 1 st concave mirror 72 is located. The condenser lens 53 is provided on the emission side of the fly-eye lens 52. The optical axis of the condenser lens 53 is disposed on the 1 st optical axis BX 1. The condenser lens 53 condenses the illumination light beam EL1 from the fly-eye lens 52 on the cylindrical lens 54. The cylindrical lens 54 is a plano-convex cylindrical lens having a flat incident side and a convex exit side. The cylindrical lens 54 is provided on the exit side of the condenser lens 53. The optical axis of the cylindrical lens 54 is disposed on the 1 st optical axis BX 1. The cylindrical lens 54 diverges the illumination light beam EL1 in the XZ plane in a direction orthogonal to the 1 st optical axis BX 1. An illumination field diaphragm 55 is disposed adjacent to the exit side of the cylindrical lens 54. The aperture of the illumination field diaphragm 55 is formed in a trapezoidal or rectangular shape having the same shape as the illumination region IR, and the center of the aperture of the illumination field diaphragm 55 is disposed on the 1 st optical axis BX 1. At this time, the illumination field diaphragm 55 is disposed on a surface optically conjugate to the illumination region IR on the mask M through various lenses from the illumination field diaphragm 55 to the mask M. The relay lens 56 is provided on the exit side of the illumination field stop 55. The optical axis of the relay lens 56 is disposed on the 1 st optical axis BX 1. The relay lens 56 causes the illumination light beam EL1 from the illumination field stop 55 to be incident into the polarization beam splitter PBS.

When the illumination light beam EL1 enters the illumination optical module ILM, the illumination light beam EL1 becomes a light beam that passes through the collimator lens 51 and irradiates the entire incident-side surface of the fly eye lens 52. The illumination light flux EL1 having entered the fly-eye lens 52 becomes an illumination light flux EL1 from each of the plurality of point light source images, and enters the cylindrical lens 54 via the condenser lens 53. The illumination light beam EL1 incident on the cylindrical lens 54 diverges in the XZ plane in a direction orthogonal to the 1 st optical axis BX 1. The illumination light beam EL1 diverged by the cylindrical lens 54 is incident on the illumination field stop 55. The illumination light beam EL1 having entered the illumination field stop 55 passes through the opening of the illumination field stop 55, and becomes a light beam having an intensity distribution having the same shape as the illumination region IR. The illumination light beam EL1 passed through the illumination field stop 55 is incident on the polarization beam splitter PBS via the relay lens 56.

The polarization beam splitter PBS is disposed between the illumination optical module ILM and the center plane CL with respect to the X-axis direction. The polarization beam splitter PBS is matched with the 1/4 wave plate 41, and reflects the illumination light beam EL1 from the illumination optical module ILM, while transmitting the projection light beam EL2 reflected by the mask M. In other words, the illumination light beam EL1 from the illumination optical assembly ILM enters the polarization beam splitter PBS as a reflected light beam, and the projection light beam (reflected light) EL2 from the mask M enters the polarization beam splitter PBS as a transmitted light beam. That is, the illumination light beam EL1 incident on the polarization beam splitter PBS is a reflected light beam of linearly polarized light that is S-polarized light, and the projection light beam EL2 incident on the polarization beam splitter PBS is a transmitted light beam of linearly polarized light that is P-polarized light.

As shown in fig. 4, the polarization beam splitter PBS includes a1 st prism 91, a2 nd prism 92, and a polarization splitting surface 93 provided between the 1 st prism 91 and the 2 nd prism 92. The 1 st prism 91 and the 2 nd prism 92 are formed of quartz glass and are triangular prisms having a triangular shape in the XZ plane. Then, the polarization beam splitter PBS is joined to the polarization splitting surface 93 via the 1 st prism 91 and the 2 nd prism 92 having a triangular shape, and is formed into a quadrilateral shape in the XZ plane.

The 1 st prism 91 is a prism on the incident side of the illumination light beam EL1 and the projection light beam EL 2. The 2 nd prism 92 is a prism on the side from which the projection light beam EL2 transmitted through the polarization splitting surface 93 is emitted. The illumination light beam EL1 and the projection light beam EL2 directed from the 1 st prism 91 to the 2 nd prism 92 enter the polarization splitting surface 93. The polarization separation surface 93 reflects the illumination light beam EL1 of S-polarized light (linearly polarized light) and transmits the projection light beam EL2 of P-polarized light (linearly polarized light).

1/4 wave plate 41 is disposed between the PBS and the mask M. 1/4 the wave plate 41 converts the illumination light beam EL1 reflected by the polarization beam splitter PBS from linearly polarized light (S polarized light) to circularly polarized light. The illumination light beam EL1 converted into circularly polarized light is irradiated to the mask M. The 1/4 wave plate 41 converts the projection light beam EL2 of the circularly polarized light reflected by the mask M into linearly polarized light (P polarized light).

Next, a plurality of projection regions PA1 to PA6 that are projected and exposed by the projection optical system PL will be described. As shown in the right view of fig. 3, the plurality of projection areas PA1 to PA6 on the substrate P are arranged to correspond to the plurality of illumination areas IR1 to IR6 on the mask M. That is, the plurality of projection regions PA1 to PA6 on the substrate P are arranged in 2 rows in the conveyance direction with the center plane CL therebetween, odd-numbered 1 st projection regions PA1, 3 rd projection regions PA3, and 5 th projection regions PA5 are arranged on the substrate P on the upstream side in the conveyance direction, and even-numbered 2 nd projection regions PA2, 4 th projection regions PA4, and 6 th projection regions PA6 are arranged on the substrate P on the downstream side in the conveyance direction.

Each of the projection areas PA1 to PA6 is an elongated trapezoidal area having a short side and a long side extending in the width direction (Y direction) of the substrate P. In this case, the projection areas PA1 to PA6 of the trapezoidal shape are areas whose shorter sides are located on the center plane CL side and whose longer sides are located outside. The 1 st, 3 rd, and 5 th projection regions PA1, PA3, and PA5 of the odd number are arranged at predetermined intervals in the width direction. The even-numbered 2 nd projection region PA2, the 4 th projection region PA4, and the 6 th projection region PA6 are arranged at predetermined intervals in the width direction. At this time, the 2 nd projection area PA2 is disposed between the 1 st projection area PA1 and the 3 rd projection area PA3 in the axial direction. Similarly, the 3 rd projection region PA3 is disposed between the 2 nd projection region PA2 and the 4 th projection region PA4 in the axial direction. The 4 th projection area PA4 is disposed between the 3 rd projection area PA3 and the 5 th projection area PA 5. The 5 th projection area PA5 is disposed between the 4 th projection area PA4 and the 6 th projection area PA 6. Like the illumination regions IR1 to IR6, the projection regions PA1 to PA6 are arranged so that the triangular portions of the diagonal side portions of the adjacent trapezoidal projection regions PA overlap (overlap) when viewed in the substrate P conveyance direction. In this case, the projection area PA has a shape in which the exposure amount in the area where the adjacent projection areas PA overlap and the exposure amount in the area where they do not overlap are substantially the same. The 1 st to 6 th projection regions PA1 to PA6 are arranged so as to cover the entire width of the exposure region a7 exposed on the substrate P in the Y direction.

Here, in fig. 2, when viewed in the XZ plane, the circumferential length from the center point of the illumination region IR1 (and IR3, IR5) to the center point of the illumination region IR2 (and IR4, IR6) on the mask M is set to be substantially equal to the circumferential length from the center point of the projection region PA1 (and PA3, PA5) to the center point of the 2 nd projection region PA2 (and PA4, PA6) on the substrate P along the support surface P2.

The number of projection optical systems PL in embodiment 1 is 6 in accordance with the 6 projection areas PA1 to PA 6. The plurality of projection light beams EL2 reflected by the mask patterns respectively located at the corresponding illumination areas IR1 to IR6 are incident on the projection optical systems PL1 to PL6, respectively. The projection optical systems PL1 to PL6 guide the projection light beams EL2 reflected by the mask M to the projection areas PA1 to PA6, respectively. That is, the 1 st projection optical system PL1 guides the projection light beam EL2 from the 1 st illumination region IR1 to the 1 st projection region PA1, and similarly, the 2 nd to 6 th projection optical systems PL2 to PL6 guide the projection light beams EL2 from the 2 nd to 6 th illumination regions IR2 to IR6 to the 2 nd to 6 th projection regions PA2 to PA 6.

The plurality of projection optical systems PL1 to PL6 are arranged in 2 rows in the circumferential direction of the mask M with the center plane CL therebetween. The plurality of projection optical systems PL1 to PL6 sandwich the center plane CL, and the 1 st projection optical system PL1, the 3 rd projection optical system PL3, and the 5 th projection optical system PL5 are disposed on the side (left side in fig. 2) where the 1 st, 3 rd, and 5 th projection areas PA1, PA3, and PA5 are disposed. The 1 st, 3 rd and 5 th projection optical systems PL1, PL3 and PL5 are arranged at predetermined intervals in the Y direction. Further, the illumination optical systems IL1 to IL6 are arranged with the center plane CL therebetween, and the 2 nd projection optical system PL2, the 4 th projection optical system PL4, and the 6 th projection optical system PL6 are arranged on the side (right side in fig. 2) where the 2 nd, 4 th, and 6 th projection areas PA2, PA4, and PA6 are arranged. The 2 nd, 4 th and 6 th projection optical systems PL2, PL4 and PL6 are arranged at predetermined intervals in the Y direction. At this time, the 2 nd projection optical system PL2 is disposed between the 1 st projection optical system PL1 and the 3 rd projection optical system PL3 in the axial direction. Similarly, the 3 rd projection optical system PL3 is disposed between the 2 nd projection optical system PL2 and the 4 th projection optical system PL4 in the axial direction. The 4 th projection optical system PL4 is disposed between the 3 rd projection optical system PL3 and the 5 th projection optical system PL 5. The 5 th projection optical system PL5 is disposed between the 4 th projection optical system PL4 and the 6 th projection optical system PL 6. The 1 st, 3 rd, and 5 th projection optical systems PL1, PL3, and PL5 and the 2 nd, 4 th, and 6 th projection optical systems PL2, PL4, and PL6 are arranged symmetrically about the center plane CL as viewed in the Y direction.

Further, with reference to fig. 4, the projection optical systems PL1 to PL6 will be described. Since the projection optical systems PL1 to PL6 have the same configuration, the 1 st projection optical system PL1 (hereinafter, simply referred to as the projection optical system PL) will be described as an example.

The projection optical system PL causes the projection light beam EL2 reflected from the illumination region IR (1 st illumination region IR1) of the mask plane P1 of the mask M to enter, and forms an intermediate image of the pattern appearing on the mask plane P1 on the intermediate image plane P7. The projection light beam EL2 reaching the intermediate image plane P7 from the mask plane P1 is referred to as the 1 st projection light beam EL2 a. The intermediate image formed on the intermediate image plane P7 is an inverted image that is 180 ° point-symmetric with respect to the mask pattern of the illumination region IR.

The projection optical system PL forms a projection image by re-forming the projection light beam EL2 emitted from the intermediate image plane P7 in the projection area PA on the projection image plane of the substrate P. Further, the projection light beam EL2 reaching the projection image plane of the substrate P from the intermediate image plane P7 is set as the 2 nd projection light beam EL2 b. The projected image is an inverted image that is point-symmetrical 180 ° with respect to the intermediate image of the intermediate image plane P7, in other words, an erect image that is the same image as the image of the mask pattern in the illumination region IR. The projection optical system PL includes the 1/4 wave plate 41, the polarization beam splitter PBS, and the projection optical module PLM in this order from the incident side of the projection light beam EL2 from the mask M.

1/4 the wave plate 41 and the polarization beam splitter PBS also serve as the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share the 1/4 wave plate 41 and the polarization beam splitter PBS.

The 1 st projection light beam EL2a reflected in the illumination region IR is a telecentric light beam directed radially outward of the 1 st axis AX1 of the mask holding cylinder 21, and enters the projection optical system PL. When the 1 st projection light beam EL2a of circularly polarized light reflected in the illumination region IR enters the projection optical system PL, it is converted from circularly polarized light into linearly polarized light (P-polarized light) by the 1/4 wave plate 41 and enters the polarization beam splitter PBS. The 1 st projection light beam EL2a incident on the polarization beam splitter PBS is transmitted by the polarization beam splitter PBS and then incident on the projection optical module PLM.

As shown in fig. 4, the projection optical assembly PLM has: a partial optical system 61 that forms an intermediate image on an intermediate image plane P7 and forms a projected image on the substrate P; a reflection optical system (light guide optical system) 62 for making the 1 st projection light beam EL2a and the 2 nd projection light beam EL2b enter the partial optical system 61; and a projected field stop 63 disposed on the intermediate image plane P7 on which the intermediate image is formed. In addition, the projection optical assembly PLM has: a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism 68.

The partial optical system 61 and the reflection optical system 62 are telecentric catadioptric optical systems obtained by transforming, for example, a Dyson (Dyson) system. The optical axis of the partial optical system 61 (hereinafter referred to as the 2 nd optical axis BX2) is substantially perpendicular to the center plane CL. The partial optical system 61 has a1 st lens group 71 and a1 st concave mirror (reflection optical member) 72. The 1 st lens group 71 has a plurality of lens components including a refractive lens (lens component) 71a provided on the center plane CL side, and the optical axes of the plurality of lens components are arranged on the 2 nd optical axis BX 2. The 1 st concave mirror 72 is disposed on a pupil plane imaged by the various lenses of the 1 st concave mirror 72 from the fly-eye lens 52 via the illumination field stop 55 by the plurality of point light sources generated by the fly-eye lens 52.

The reflection optical system 62 includes a1 st deflection member (1 st optical member and 1 st reflection member) 76, a2 nd deflection member (2 nd optical member and 3 rd reflection unit) 77, a3 rd deflection member (3 rd optical member and 4 th reflection unit) 78, and a4 th deflection member (4 th optical member and 2 nd reflection member) 79. The 1 st deflecting member 76 is a mirror having a1 st reflecting surface P3. The 1 st reflection surface P3 reflects the 1 st projection light beam EL2a from the polarization beam splitter PBS, and the reflected 1 st projection light beam EL2a is made incident on the refraction lens 71a of the 1 st lens group 71. The 2 nd deflecting member 77 is a mirror having a2 nd reflecting surface P4. The 2 nd reflection surface P4 reflects the 1 st projection light beam EL2a emitted from the refractive lens 71a, and the reflected 1 st projection light beam EL2a is incident on the field stop 63 provided on the intermediate image plane P7. The 3 rd deflection member 78 is a mirror having a3 rd reflection plane P5. The 3 rd reflection surface P5 reflects the 2 nd projection light beam EL2b from the field stop 63, and the reflected 2 nd projection light beam EL2b is made incident to the refracting lens 71a of the 1 st lens group 71. The 4 th deflecting member 79 is a mirror having a4 th reflecting surface P6. The 4 th reflection surface P6 reflects the 2 nd projection light beam EL2b emitted from the refractive lens 71a, and the reflected 2 nd projection light beam EL2b is incident on the substrate P. In this manner, the 2 nd deflection unit 77 and the 3 rd deflection unit 78 function as a folding mirror that reflects the 1 st projection light beam EL2a from the partial optical system 61 so as to be folded back again toward the partial optical system 61. The reflection surfaces P3 to P6 of the 1 st to 4 th deflecting members 76, 77, 78, and 79 are all planes parallel to the Y axis in fig. 4, and are arranged obliquely at a predetermined angle in the XZ plane.

The projection field stop 63 has an opening defining the shape of the projection area PA. That is, the shape of the opening of the projection field stop 63 defines the shape of the projection area PA.

The 1 st projection light beam EL2a from the polarization beam splitter PBS passes through the image shift optical member 65 and is reflected by the 1 st reflection surface P3 of the 1 st deflecting member 76. The 1 st projection light beam EL2a reflected by the 1 st reflection surface P3 enters the 1 st lens group 71, passes through a plurality of lens components including a refraction lens 71a, and enters the 1 st concave mirror 72. At this time, the 1 st projection light beam EL2a passes through the 1 st lens group 71 from the field of view region of the refractive lens 71a located on the upper side in the + Z direction with respect to the 2 nd optical axis BX 2. The 1 st projection light beam EL2a incident on the 1 st concave mirror 72 is reflected by the 1 st concave mirror 72. The 1 st projection light beam EL2a reflected by the 1 st concave mirror 72 enters the 1 st lens group 71, passes through a plurality of lens components including the refractive lens 71a, and exits from the 1 st lens group 71. At this time, the 1 st projection light beam EL2a passes through the field of view region of the 1 st lens group 71a located on the lower side in the-Z direction with respect to the 2 nd optical axis BX 2. The 1 st projection light beam EL2a emitted from the 1 st lens group 71 is reflected by the 2 nd reflection surface P4 of the 2 nd deflecting member 77. The 1 st projection light beam EL2a reflected by the 2 nd reflection surface P4 enters the projection field stop 63. The 1 st projection light beam EL2a incident on the field stop 63 forms an intermediate image that is an inverted image of the mask pattern in the illumination area IR.

The 2 nd projection light beam EL2b from the projection field stop 63 is reflected by the 3 rd reflection surface P5 of the 3 rd deflection section 78. The 2 nd projection light beam EL2b reflected by the 3 rd reflection surface P5 is again incident to the 1 st lens group 71, passes through a plurality of lens components including a refraction lens 71a, and is then incident to the 1 st concave mirror 72. At this time, the 2 nd projection light beam EL2b passes through the field of view region between the incident side and the exit side of the 1 st projection light beam EL2a on the upper side in the + Z direction with respect to the 2 nd optical axis BX2 of the refractive lens 71a in the 1 st lens group 71. The 2 nd projection light beam EL2b incident on the 1 st concave mirror 72 is reflected by the 1 st concave mirror 72. The 2 nd projection light beam EL2b reflected by the 1 st concave mirror 72 enters the 1 st lens group 71, passes through a plurality of lens components including the refractive lens 71a, and exits from the 1 st lens group 71. At this time, the 2 nd projection light beam EL2b passes through the field of view region between the incident side and the exit side of the 1 st projection light beam EL2a on the lower side of the refractive lens 71a in the-Z direction with respect to the 2 nd optical axis BX2 in the 1 st lens group 71. The 2 nd projection light beam EL2b emitted from the 1 st lens group 71 is reflected by the 4 th reflection surface P6 of the 4 th deflecting member 79. The 2 nd projection light beam EL2b reflected by the 4 th reflection surface P6 passes through the focus correction optical member 64 and the magnification correction optical member 66, and is projected onto the projection area PA on the substrate P. The 2 nd projection light beam EL2b projected onto the projection area PA forms a projection image that is an erect image of the mask pattern in the illumination area IR. At this time, the image of the mask pattern in the illumination area IR is projected to the projection area PA at an equal magnification (× 1).

Here, the field of view of the projection optical module PLM including the 1 st lens group 71 including the refractive lens 71a and the 1 st concave mirror 72 will be briefly described with reference to fig. 5. Fig. 5 shows a state where the circular full imaging field (reference plane) CIF of the projection optical module PLM is developed along the YZ plane in fig. 5, and the rectangular illumination region IR on the mask M, the intermediate image Img1 on the projection field stop 63 formed on the intermediate image plane P7, the intermediate image Img2 adjusted to be trapezoidal by the projection field stop 63 on the intermediate image plane P7, and the trapezoidal projection region PA on the substrate P are set to be elongated in the Y axis direction and arranged separately in the Z axis direction.

First, the center of the rectangular illumination area IR on the mask M is set to a position (position 1) shifted from the center point of the full imaging field CIF (through the optical axis BX2) in the + Z direction by the image height value k 1. Therefore, the intermediate image Img1 formed on the projection field stop 63 (intermediate image plane P7) by the first imaging optical path (1 st projection light beam EL2a) passing through the projection optical module PLM is imaged at the position (position 2) of the image height value k1 eccentric from the center point of the entire imaging field CIF to the-Z direction in a state where the illumination region IR is inverted in the vertical direction (Z direction) and the horizontal direction (Y direction) when viewed in the YZ plane.

The intermediate image Img2 is an image in which the intermediate image Img1 is limited by the trapezoidal opening of the projection field stop 63. Then, since the optical path of the intermediate image Img2 is bent by the two deflecting members 77 and 78 disposed before and after the projection field diaphragm 63, the intermediate image is formed at a position (position 3) where the image height k2(k2 < k1) is directed in the + Z direction from the center point of the full imaging field CIF when viewed in the YZ plane. The intermediate image Img2 limited by the field stop 63 is re-imaged in the projection area PA formed on the substrate P via the 2 nd imaging optical path (the 2 nd projection light beam EL2b) passing through the projection optical module PLM.

When the center point of the image re-imaged in the projection area PA is viewed in the YZ plane, the image height value k2(k2 < k1) is located in the-Z direction from the center point of the full imaging field CIF. The image re-imaged in the projection area PA is formed at an equal magnification (× 1) without being inverted in the left-right direction (Y direction) with respect to the mask pattern in the illumination area IR.

As described above, in the present embodiment, the illumination region IR is limited to the elongated rectangular or trapezoidal region so that the imaging light flux from the mask pattern can be easily spatially separated within the circular imaging field of view CIF, and the imaging optical path of the double pass (double pass) is formed within the projection optical module PLM by the four deflecting members 76, 77, 78, and 79 formed by the normal total reflection mirrors. Therefore, the pattern on the mask M can be projected on the substrate P as an erect image of equal magnification at least in the Y-axis direction (the direction of connection of the projection images by the projection optical units PL1 to PL 6).

In this manner, the 1 st deflecting member 76, the 2 nd deflecting member 77, the 3 rd deflecting member 78, and the 4 th deflecting member 79 separate the field of view on the incident side of the 1 st projection light beam EL2a (the 1 st incident field of view), the field of view on the emission side of the 1 st projection light beam EL2a (the 1 st emission field of view), the field of view on the incident side of the 2 nd projection light beam EL2b (the 2 nd incident field of view), and the field of view on the emission side of the 2 nd projection light beam EL2b (the 2 nd emission field of view) in the reflection optical system 62. Therefore, the reflection optical system 62 is configured to be less likely to generate leakage light when the 1 st projection light beam EL2a is guided, and the reflection optical system 62 functions as a light amount reducing portion that reduces the amount of leakage light projected onto the substrate P. The leakage light is, for example, scattered light generated by scattering of the 1 st projection light beam EL2a, split light generated by splitting of the 1 st projection light beam EL2a, and reflected light generated by reflecting a part of the 1 st projection light beam EL2 a.

Here, the reflection optical system 62 is provided with a1 st deflecting member 76, a3 rd deflecting member 78, a4 th deflecting member 79, and a2 nd deflecting member 77 in this order from the upper side in the Z direction. Therefore, the 1 st projection light beam EL2a incident on the refracting lens 71a of the 1 st lens group 71 is incident on the side close to the illumination area IR (the upper side of the refracting lens 71 a). The 2 nd projection light beam EL2b emitted from the refracting lens 71a of the 1 st lens group 71 is emitted from the side close to the projection area PA (the lower side of the refracting lens 71 a). Therefore, the distance between the illumination region IR and the 1 st deflecting member 76 can be shortened, and the distance between the projection region PA and the 4 th deflecting member 79 can be shortened, so that the projection optical system PL can be downsized. As shown in fig. 4, the 3 rd deflecting member 78 is disposed between the 1 st deflecting member 76 and the 4 th deflecting member 79 with respect to the direction (Z direction) along the full imaging field of view CIF. The positions of the 1 st deflecting member 76 and the 4 th deflecting member 79 and the positions of the 2 nd deflecting member 77 and the 3 rd deflecting member 78 are different from each other with respect to the direction of the 2 nd optical axis BX 2.

Since the reflection optical system 62 has 4 fields of view (corresponding to IR, Img1, Img2, and PA shown in fig. 5) of the 1 st incident field of view, the 1 st outgoing field of view, the 2 nd incident field of view, and the 2 nd outgoing field of view, it is preferable that the size of the projection area PA is a predetermined size so that the projection light beam EL2 does not overlap in the 4 fields of view. That is, the length of the projection area PA in the scanning direction of the substrate P and the length in the width direction of the substrate P orthogonal to the scanning direction are: the length in the scanning direction/the length in the width direction is not more than 1/4. Therefore, the reflection optical system 62 can guide the projection light beam EL2 to the partial optical system 61 without causing the projection light beam EL2 to be repeatedly split in 4 fields of view.

The 1 st deflecting member 76, the 2 nd deflecting member 77, the 3 rd deflecting member 78, and the 4 th deflecting member 79 are formed in a rectangular shape corresponding to any of 4 fields (corresponding to IR, Img1, Img2, and PA shown in fig. 5) of the 1 st incident field, the 1 st outgoing field, the 2 nd incident field, and the 2 nd outgoing field of the slit shape, and are disposed so as to be separated from each other in the width direction (Z direction) of the slit along the entire imaging field CIF.

The focus correction optical member 64 is disposed between the 4 th deflecting member 79 and the substrate P. The focus correction optical member 64 adjusts the focus state of the image of the mask pattern projected onto the substrate P. The focus correction optical member 64 is formed by, for example, superimposing two (2) wedge-shaped prisms in opposite directions (opposite directions with respect to the X direction in fig. 4) so as to be transparent parallel flat plates as a whole. The 1 pair of prisms were slid in the direction of the inclined plane without changing the interval between the mutually opposing faces, and the thickness as a parallel plate was changed. Therefore, the effective optical path length of the partial optical system 61 can be finely adjusted, and the focal state of the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be finely adjusted.

The image-shifting optical member 65 is disposed between the polarization beam splitter PBS and the 1 st deflecting member 76. The image shift optical member 65 adjusts the image of the mask pattern projected onto the substrate P so as to be movable on the image plane. The image shift optical member 65 is composed of transparent parallel plate glass tiltable in the XZ plane of fig. 4 and transparent parallel plate glass tiltable in the YZ plane of fig. 4. By adjusting the respective inclination amounts of the 2 pieces of parallel plate glass, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction or the Y direction.

The magnification correction optical member 66 is disposed between the 4 th deflecting member 79 and the substrate P. The magnification correction optical member 66 is configured such that, for example, 3 concave lenses, convex lenses, and concave lenses are coaxially arranged at a predetermined interval, the front and rear concave lenses are fixed, and the convex lens between the front and rear concave lenses is moved in the optical axis (principal ray) direction. Therefore, the image of the mask pattern formed in the projection area PA is isotropically enlarged or reduced only by a slight amount while maintaining a telecentric imaging state. The optical axes of the 3 lens groups constituting the magnification correction optical member 66 are inclined in the XZ plane so as to be parallel to the principal ray of the projection light beam EL2 (2 nd projection light beam EL2 b).

The rotation correcting mechanism 67 slightly rotates the 2 nd deflecting member 77 about an axis parallel to (or perpendicular to) the 2 nd optical axis BX2, for example, by an actuator (not shown). The rotation correcting mechanism 67 rotates the 2 nd deflecting member 77, and can slightly rotate the image of the mask pattern formed on the intermediate image plane P7 within the plane P7.

The polarization adjustment mechanism 68 adjusts the polarization direction by rotating the 1/4 wave plate 41 around an axis perpendicular to the plate surface by an actuator (not shown), for example. The polarization adjustment mechanism 68 can adjust the illuminance of the projection light beam EL2 (the 2 nd projection light beam EL2b) projected onto the projection area PA by rotating the 1/4 wave plate 41.

In the projection optical system PL configured as described above, the 1 st projection light beam EL2a from the mask M is emitted from the illumination region IR in the normal direction of the mask plane P1 (radial direction with the 1 st axis AX1 as the center), passes through the 1/4 wave plate 41, the polarization beam splitter PBS, and the image shift optical member 65, and enters the reflection optical system 62. The 1 st projection light beam EL2a incident on the reflection optical system 62 is reflected by the 1 st reflection surface P3 of the 1 st deflection member 76 of the reflection optical system 62 and enters the partial optical system 61. The 1 st projection light beam EL2a incident on the partial optical system 61 passes through the 1 st lens group 71 of the partial optical system 61 and is reflected by the 1 st concave mirror 72. The 1 st projection light beam EL2a reflected by the 1 st concave mirror 72 passes through the 1 st lens group 71 again and is emitted from the partial optical system 61. The 1 st projection light beam EL2a emitted from the partial optical system 61 is reflected by the 2 nd reflection surface P4 of the 2 nd deflection member 77 of the reflection optical system 62, and enters the projected field stop 63. The 2 nd projection light beam EL2b passing through the field stop 63 is reflected by the 3 rd reflection surface P5 of the 3 rd deflection member 78 of the reflection optical system 62, and enters the partial optical system 61 again. The 2 nd projection light beam EL2b incident on the partial optical system 61 passes through the 1 st lens group 71 of the partial optical system 61 and is reflected by the 1 st concave mirror 72. The 2 nd projection light beam EL2b reflected by the 1 st concave mirror 72 passes through the 1 st lens group 71 again and is emitted from the partial optical system 61. The 2 nd projection light beam EL2b emitted from the partial optical system 61 is reflected by the 4 th reflection surface P6 of the 4 th deflecting member 79 of the reflection optical system 62, and enters the focus correction optical member 64 and the magnification correction optical member 66. The 2 nd projection light beam EL2b emitted from the magnification correction optical member 66 is incident on the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination area IR is projected onto the projection area PA at an equal magnification (× 1).

< method for manufacturing device >

Next, a device manufacturing method will be described with reference to fig. 6. Fig. 6 is a flowchart showing a device manufacturing method according to embodiment 1.

In the device manufacturing method shown in fig. 6, first, function and performance design of a display panel formed of a self-light emitting element such as an organic EL is performed, and a desired circuit pattern and/or wiring pattern is designed by CAD or the like (step S201). Then, a mask M of a required number of layers is produced based on the pattern of each of the various layers designed by CAD or the like (step S202). Further, a supply roller FR1 on which a flexible substrate P (a resin film, a metal foil film, plastic, or the like) to be a base material of the display panel is wound is prepared (step S203). The roll-shaped substrate P prepared in step S203 may be a substrate whose surface is modified, a substrate on which a base layer (for example, fine irregularities by an imprint method) is formed in advance, or a substrate on which a photosensitive functional film and/or a transparent film (insulating material) is laminated in advance, as necessary.

Then, electrodes constituting a display panel device and a bottom plane layer composed of wirings, an insulating film, TFTs (thin film semiconductors), and the like are formed on the substrate P, and a light emitting layer (display pixel portion) based on a self-light emitting element such as an organic EL is formed so as to be laminated on the bottom plane (step S204). In step S204, a conventional photolithography step of exposing the photoresist layer using the exposure apparatus U3 described in the above embodiments is also included, but the steps include processing based on the following steps: an exposure step of pattern-exposing the substrate P coated with the photosensitive silane coupling agent material instead of the photoresist to form a hydrophilic pattern on the surface; a wet step of pattern-exposing the photosensitive catalyst layer to form a pattern of a metal film (wiring, electrode, etc.) by electroless plating; or a printing step of drawing a pattern with a conductive ink containing silver nanoparticles or the like.

Then, the device is assembled by cutting the substrate P for each display panel device continuously manufactured on the long substrate P by a roll method, or attaching a protective film (an environmental-resistant barrier layer), a color filter sheet, and the like on the surface of each display panel device (step S205). Then, an inspection process is performed to check whether the display panel device functions normally and satisfies desired performance and characteristics (step S206). By the above, a display panel (flexible display) can be manufactured.

As described above, in embodiment 1, since the 1 st incident visual field, the 1 st outgoing visual field, the 2 nd incident visual field, and the 2 nd outgoing visual field can be separated from each other by the reflection optical system 62 that cooperates with the projection optical system PL (projection optical module PLM), the generation of leakage light from the 1 st projection light beam EL2a can be suppressed. Therefore, the reflective optical system 62 is configured such that the leakage light is hard to be projected onto the substrate P, and therefore, the quality of the image projected and exposed onto the substrate P can be prevented from deteriorating.

In embodiment 1, since the projection area PA can be set to have a length in the scanning direction/length in the width direction equal to or less than 1/4, the fields of view of the 1 st projection light beam EL2a and the 2 nd projection light beam EL2b in the reflection optical system 62, that is, the 1 st incident field of view, the 1 st outgoing field of view, the 2 nd incident field of view, and the 2 nd outgoing field of view can be separated without overlapping.

In embodiment 1, since illumination light beam EL1 can be made to be a laser beam, the illuminance of 2 nd projection light beam EL2b projected onto projection area PA can be appropriately ensured.

In embodiment 1, the 1 st projected light beam EL2a and the 2 nd projected light beam EL2b incident on the refractive lens 71a are positioned above the refractive lens 71a, and the 1 st projected light beam EL2a and the 2 nd projected light beam EL2b emitted from the refractive lens 71a are positioned below the refractive lens 71 a. However, the incident position and the exit position of the 1 st projected light beam EL2a and the 2 nd projected light beam EL2b with respect to the refractive lens 71a are not particularly limited as long as the 1 st incident visual field, the 1 st exit visual field, the 2 nd incident visual field, and the 2 nd exit visual field can be separated from each other.

[ 2 nd embodiment ]

Next, referring to fig. 7, an exposure apparatus U3 according to embodiment 2 will be described. In embodiment 2, in order to avoid redundant description with embodiment 1, only the portions different from embodiment 1 will be described, and the same components as those in embodiment 1 will be described with the same reference numerals as those in embodiment 1. Fig. 7 is a diagram showing the configuration of an illumination optical system and a projection optical system of the exposure apparatus according to embodiment 2. The exposure apparatus U3 according to embodiment 1 has a field of view separated in the reflection optical system 62 of the projection optical system PL, and thus is less likely to generate leakage light. The exposure apparatus U3 according to embodiment 2 is configured such that the imaging position of the projection image formed by the projection light beam EL2 and the imaging position of the defective image formed by the leaked light are different in the scanning direction of the substrate P in the reflection optical system 100 of the projection optical system PL.

In the exposure apparatus U3 according to embodiment 2, the projection optical system PL includes, in order from the incident side of the projection light beam EL2 from the mask M, a 1/4 wave plate 41, a polarization beam splitter PBS, and a projection optical module PLM including a partial optical system 61, a reflection optical system (light guide optical system) 100, and a projection field stop 63. The projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, a magnification correction optical member 66, a rotation correction mechanism 67, and a polarization adjustment mechanism 68, as in embodiment 1. Note that 1/4, the wave plate 41, the polarization beam splitter PBS, the partial optical system 61, the projection field stop 63, the focus correction optical member 64, the image shift optical member 65, the magnification correction optical member 66, the rotation correction mechanism 67, and the polarization adjustment mechanism 68 have the same configuration, and therefore, the description thereof is omitted.

The reflection optical system 100 includes a1 st polarization beam splitter (1 st reflecting member) PBS1, a2 nd polarization beam splitter (2 nd reflecting member) PBS2, a 1/2 wave plate 104, a1 st deflection member (1 st optical member and 3 rd reflecting unit) 105, a2 nd deflection member (2 nd optical member and 4 th reflecting unit) 106, a1 st light shielding plate 111, and a2 nd light shielding plate 112. The 1 st polarization beam splitter PBS1 has a1 st polarization splitting plane P10. The 1 st polarization splitting surface P10 reflects the 1 st projection light beam EL2a from the polarization beam splitter PBS1, and the reflected 1 st projection light beam EL2a is made incident on the refracting lens 71a of the 1 st lens group 71. The 1 st polarization splitting plane P10 transmits the 2 nd projection light beam EL2b from the intermediate image plane P7, and the transmitted 2 nd projection light beam EL2b is incident on the refracting lens 71a of the 1 st lens group 71. The 2 nd polarization beam splitter PBS2 has a2 nd polarization light splitting plane P11. The 2 nd polarization splitting surface P11 transmits the 1 st projection light beam EL2a from the refracting lens 71a of the 1 st lens group 71, and the 1 st projection light beam EL2a after transmission is incident on the 1 st deflecting member 105. In addition, the 2 nd polarization splitting plane P11 reflects the 2 nd projection light beam EL2b from the refracting lens 71a of the 1 st lens group 71, and makes the reflected 2 nd projection light beam EL2b incident on the substrate P. The 1/2 wave plate 104 converts the 1 st projection light beam EL2a of S-polarized light reflected by the 1 st polarization beam splitter PBS1 into the 1 st projection light beam EL2a of P-polarized light. In addition, the 1/2 wave plate 104 converts the 2 nd projection light beam EL2b of P-polarized light transmitted from the 1 st polarization beam splitter PBS1 into the 2 nd projection light beam EL2b of S-polarized light. The 1 st deflecting member 105 is a mirror having a1 st reflecting surface P12. The 1 st reflection surface P12 reflects the 1 st projection light beam EL2a transmitted from the 2 nd polarization beam splitter PBS2, and the reflected 1 st projection light beam EL2a enters the projection field stop 63 provided on the intermediate image surface P7. The 2 nd deflecting member 106 is a mirror having a2 nd reflecting surface P13. The 2 nd reflection surface P13 reflects the 2 nd projection light beam EL2b from the field stop 63, and the reflected 2 nd projection light beam EL2b is made incident on the 1 st polarization beam splitter PBS 1. In this manner, the 1 st deflection unit 105 and the 2 nd deflection unit 106 function as a folding mirror that reflects the 1 st projection light beam EL2a from the partial optical system 61 so as to fold back again toward the partial optical system 61.

Further, since the 1 st polarization beam splitter PBS1 is provided in the reflection optical system 100, a 1/2 wave plate 107 is provided between the polarization beam splitter PBS and the 1 st polarization beam splitter PBS1 so that the projection beam of the P-polarized light transmitted through the polarization beam splitter PBS is reflected by the 1 st polarization beam splitter PBS 1.

The 1 st light shielding plate 111 is disposed between the 2 nd polarization beam splitter PBS2 and the substrate P. The 1 st light shielding plate 111 is provided at a position where it can shield reflected light (leak light) in which a part of the 1 st projection light beam EL2a incident on the 2 nd polarization beam splitter PBS2 is not transmitted and reflected from the 2 nd polarization splitting surface P11 of the 2 nd polarization beam splitter PBS 2.

The 2 nd mask 112 is disposed between the 1 st polarization beam splitter PBS1 and the 2 nd polarization beam splitter PBS 2. The 2 nd light blocking plate 112 blocks leakage light leaking from the 1 st polarization beam splitter PBS1 to the 2 nd polarization beam splitter PBS 2.

The 1 st projection light beam EL2a of P-polarized light from the polarization beam splitter PBS passes through the image shift optical element 65 and is transmitted through the 1/2 wave plate 107. The 1 st projection light beam EL2a transmitted from the 1/2 wave plate 107 is converted into S-polarized light and then enters the 1 st polarization beam splitter PBS 1. The 1 st projection light beam EL2a of the S polarized light incident to the 1 st polarization beam splitter PBS1 is reflected by the 1 st polarization light splitting plane P10 of the 1 st polarization beam splitter PBS 1. The 1 st projection light beam EL2a of S-polarized light reflected by the 1 st polarization separation plane P10 is transmitted through the 1/2 wave plate 104. The 1 st projection light beam EL2a transmitted from the 1/2 wave plate 104 is converted into P-polarized light and then enters the 1 st lens group 71. The 1 st projection light beam EL2a incident on the 1 st lens group 71 passes through a plurality of lens components including a refractive lens 71a and then enters the 1 st concave mirror 72. At this time, the 1 st projection light beam EL2a passes through the 1 st lens group 71 from the field of view region (1 st incident field of view) on the upper side of the refractive lens 71 a. The 1 st projection light beam EL2a incident on the 1 st concave mirror 72 is reflected by the 1 st concave mirror 72. The 1 st projection light beam EL2a reflected by the 1 st concave mirror 72 enters the 1 st lens group 71, passes through a plurality of lens components including a refraction lens 71a, and then exits from the 1 st lens group 71. At this time, the 1 st projection light beam EL2a passes through the 1 st lens group 71 from the field of view region (1 st outgoing field of view) on the lower side of the refractive lens 71 a. The 1 st projection light beam EL2a emitted from the 1 st lens group 71 is incident on the 2 nd polarization beam splitter PBS 2. The 1 st projection light beam EL2a of P-polarized light incident to the 2 nd polarization beam splitter PBS2 is transmitted from the 2 nd polarization splitting plane P11. The 1 st projection light beam EL2 transmitted from the 2 nd polarization splitting plane P11 enters the 1 st deflection member 105 and is reflected by the 1 st reflection plane P12 of the 1 st deflection member 105. The 1 st projection light beam EL2a reflected by the 1 st reflection surface P12 is incident on the projected field stop 63. The 1 st projection light beam EL2a incident on the field stop 63 forms an intermediate image that is an inverted image of the mask pattern in the illumination area IR.

The 2 nd projection light beam EL2b from the projection field stop 63 is reflected by the 2 nd reflection surface P13 of the 2 nd deflection unit 106. The 2 nd projection light beam EL2b reflected by the 2 nd reflection surface P13 is incident to the 1 st polarization beam splitter PBS 1. The 2 nd projection light beam EL2b of P-polarized light incident to the 1 st polarization beam splitter PBS1 is transmitted from the 1 st polarization splitting plane P10. The 2 nd projection light beam EL2b of the P-polarized light transmitted from the 1 st polarization separation plane P10 is transmitted from the 1/2 wave plate 104. The 2 nd projection light beam EL2b transmitted from the 1/2 wave plate 104 is converted into S-polarized light and then enters the 1 st lens group 71. The 2 nd projection light beam EL2b incident on the 1 st lens group 71 passes through a plurality of lens components including a refractive lens 71a and then is incident on the 1 st concave mirror 72. At this time, the 2 nd projection light beam EL2b passes through the 1 st lens group 71 from the field of view region (2 nd incident field of view) on the upper side of the refractive lens 71 a. The 2 nd projection light beam EL2b incident on the 1 st concave mirror 72 is reflected by the 1 st concave mirror 72. The 2 nd projection light beam EL2b reflected by the 1 st concave mirror 72 enters the 1 st lens group 71, passes through a plurality of lens components including a refractive lens 71a, and then exits from the 1 st lens group 71. At this time, the 2 nd projection light beam EL2b passes through the 1 st lens group 71 from the field area (2 nd outgoing field) on the lower side of the refractive lens 71 a. The 2 nd projection light beam EL2b emitted from the 1 st lens group 71 is incident on the 2 nd polarization beam splitter PBS 2. The 2 nd projection light beam EL2b of the S polarized light incident to the 2 nd polarization beam splitter PBS2 is reflected by the 2 nd polarization splitting plane P11. The 2 nd projection light beam EL2b reflected by the 2 nd polarization splitting plane P11 passes through the focus correction optical member 64 and the magnification correction optical member 66, and is projected onto the projection area PA on the substrate P. The 2 nd projection light beam EL2b projected onto the projection area PA forms a projection image that is an erect image of the mask pattern in the illumination area IR. At this time, the image of the mask pattern in the illumination area IR is projected to the projection area PA at an equal magnification (× 1).

Here, the 1 st polarization beam splitter PBS1, the 2 nd polarization beam splitter PBS2, the 1 st deflection member 105, and the 2 nd deflection member 106 are arranged so that the imaging position of the projected image formed by the 2 nd projection light beam EL2b reflected by the 2 nd polarization beam splitter PBS2 and the imaging position of the defective image formed by the leak light which is a part of the 1 st projection light beam EL2a reflected by the 2 nd polarization beam splitter PBS2 are different in the scanning direction of the substrate P. Specifically, the 1 st polarization beam splitter PBS1, the 2 nd polarization beam splitter PBS2, the 1 st deflection member 105, and the 2 nd deflection member 106 are arranged so that the incident position of the 1 st projection light beam EL2a is different from the incident position of the 2 nd projection light beam EL2b with respect to the 1 st polarization beam splitting surface P10 of the 1 st polarization beam splitter PBS 1. With such a configuration, the incident position of the 2 nd projection light beam EL2b and the incident position of the 1 st projection light beam EL2a can be made different with respect to the 2 nd polarization splitting plane P11 of the 2 nd polarization beam splitter PBS 2. Therefore, the imaging position of the projected image of the 2 nd projection light beam EL2b reflected by the 2 nd polarization splitting surface P11 and the imaging position of the defective image of the leakage light which is a part of the 1 st projection light beam EL2a reflected by the 2 nd polarization splitting surface P11 can be made different in the scanning direction of the substrate P.

In this case, the 1 st light shielding plate 111 is provided at a position to shield leakage light from the 2 nd polarization beam splitter PBS2 toward the substrate P. Accordingly, the 1 st light blocking plate 111 allows projection of the 2 nd projection light beam EL2b from the 2 nd polarization beam splitter PBS2 toward the substrate P to the substrate P, and blocks leakage light from the 2 nd polarization beam splitter PBS2 toward the substrate P.

In this manner, the 1 st polarization beam splitter PBS1, the 2 nd polarization beam splitter PBS2, the 1 st deflecting member 105, the 2 nd deflecting member 106, and the 1 st light blocking plate 111 block the leakage light by making the imaging position of the projected image and the imaging position of the defective image different in the scanning direction of the substrate P, and the 1 st light blocking plate 111 blocks the leakage light. Therefore, the reflection optical system 100 functions as a light amount reducing portion that reduces the light amount of the leakage light projected onto the substrate P.

Further, the incident position of the 1 st projection light beam EL2a on the 1 st polarization splitting surface P10 of the 1 st polarization beam splitter PBS1 and the incident position of the 1 st projection light beam EL2a on the 2 nd polarization splitting surface P11 of the 2 nd polarization beam splitter PBS2 are symmetrical positions with respect to the 2 nd optical axis BX 2. Further, the incident position of the 2 nd projection light beam EL2b on the 1 st polarization splitting plane P10 of the 1 st polarization beam splitter PBS1 and the incident position of the 2 nd projection light beam EL2b on the 2 nd polarization splitting plane P11 of the 2 nd polarization beam splitter PBS2 are symmetrical positions with respect to the 2 nd optical axis BX 2. In other words, the incident position of the 1 st projection light beam EL2a on the 1 st polarization splitting plane P10 of the 1 st polarization beam splitter PBS1 and the incident position of the 2 nd projection light beam EL2b on the 2 nd polarization splitting plane P11 of the 2 nd polarization beam splitter PBS2 are asymmetric positions with respect to the 2 nd optical axis BX 2.

When the incident position of the 1 st projection light beam EL2a on the 1 st polarization separation plane P10 and the incident position of the 2 nd projection light beam EL2b on the 2 nd polarization separation plane P11 are asymmetric with respect to the 2 nd optical axis BX2, the projection area PA is shifted in the X direction (2 nd optical axis direction) with respect to the illumination area IR. In this case, in order to set the circumferential length from the center point of the illumination region IR1 (and IR3, IR5) to the center point of the illumination region IR2 (and IR4, IR6) on the mask M and the circumferential length from the center point of the projection region PA1 (and PA3, PA5) to the center point of the 2 nd projection region PA2 (and PA4, PA6) to the same length, the 1 st projection optical system PL1 (and PL3, PL5) and the 2 nd projection optical system PL2 (and PL4, PL6) are configured to be partially different from each other.

The 1 st polarization beam splitter PBS1, the 2 nd polarization beam splitter PBS2, the 1 st deflecting member 105, and the 2 nd deflecting member 106 are disposed in odd numbers (left side in fig. 7) of the 1 st projection optical system PL1 (and PL3, PL5) such that the incident position of the 1 st projection light beam EL2a is located on the upper side in the Z direction and on the center side in the X direction than the incident position of the 2 nd projection light beam EL2b on the 1 st polarization splitting plane P10 of the 1 st polarization beam splitter PBS 1. Therefore, in the 2 nd polarization splitting plane P11 of the 2 nd polarization beam splitter PBS2, the incident position of the 2 nd projection light beam EL2b is located on the upper side in the Z direction and on the outer side in the X direction than the incident position of the 1 st projection light beam EL2 a.

That is, the 1 st projection optical system PL1 is arranged in the Z direction in the order of the reflection portion of the 1 st polarization beam splitter PBS1, the reflection portion of the 2 nd deflection member 106, the reflection portion of the 2 nd polarization beam splitter PBS2, and the reflection portion of the 1 st deflection member 105. Therefore, as shown in fig. 7, the 2 nd deflecting member 106 is arranged between the reflection portion of the 1 st polarization beam splitter PBS1 and the reflection portion of the 2 nd polarization beam splitter PBS2 with respect to the direction (Z direction) along the full imaging field of view CIF. In the 1 st projection optical system PL1, the positions of the reflection portions of the 1 st polarization beam splitter PBS1 and the 2 nd polarization beam splitter PBS2 and the positions of the 1 st deflection member 105 and the 2 nd deflection member 106 are different from each other with respect to the direction of the 2 nd optical axis BX 2.

The even-numbered (right side in fig. 7) 2 nd projection optical system PL2 (and PL4, PL6) is provided with the 1 st polarization beam splitter PBS1, the 2 nd polarization beam splitter PBS2, the 1 st deflection member 105, and the 2 nd deflection member 106 so that the incident position of the 1 st projection light beam EL2a is positioned on the lower side in the Z direction and on the outer side in the X direction than the incident position of the 2 nd projection light beam EL2b on the 1 st polarization splitting plane P10 of the 1 st polarization beam splitter PBS 1. Therefore, in the 2 nd polarization splitting plane P11 of the 2 nd polarization beam splitter PBS2, the incident position of the 2 nd projection light beam EL2b is located on the center side in the X direction and on the lower side in the Z direction than the incident position of the 1 st projection light beam EL2 a.

That is, the 2 nd projection optical system PL2 is arranged in the Z direction in the order of the reflection portion of the 2 nd deflection member 106, the reflection portion of the 1 st polarization beam splitter PBS1, the reflection portion of the 1 st deflection member 105, and the reflection portion of the 2 nd polarization beam splitter PBS 2. Therefore, as shown in fig. 7, the 1 st deflecting member 105 is disposed between the reflection portion of the 1 st polarization beam splitter PBS1 and the reflection portion of the 2 nd polarization beam splitter PBS2 with respect to the direction (Z direction) along the full imaging field of view CIF. In the 2 nd projection optical system PL2, as in the 1 st projection optical system PL1, the positions of the reflection portions of the 1 st polarization beam splitter PBS1 and the 2 nd polarization beam splitter PBS2 and the positions of the 1 st deflection member 105 and the 2 nd deflection member 106 are different from each other with respect to the direction of the 2 nd optical axis BX 2.

The reflection portion of the 1 st polarization beam splitter PBS1, the reflection portion of the 2 nd polarization beam splitter PBS2, the 1 st deflection member 105, and the 2 nd deflection member 106 are formed in a rectangular shape corresponding to any of 4 fields of the slit-shaped 1 st incident field, 1 st outgoing field, 2 nd incident field, and 2 nd outgoing field (corresponding to IR, Img1, Img2, and PA shown in fig. 5), and are arranged apart from each other in the width direction (Z direction) of the slit along the entire imaging field CIF. In fig. 5, in the case of the 1 st odd-numbered projection optical systems PL1 (and PL3 and PL5), the illumination region IR, the intermediate image Img2, the projection region PA, and the intermediate image Img1 are formed in this order from the upper side in the Z direction. On the other hand, in the case of the even-numbered 2 nd projection optical system PL2 (and PL4, PL6), the intermediate image Img2, the illumination region IR, the intermediate image Img1, and the projection region PA are formed in this order from above in the Z direction.

As described above, by partially configuring the 1 st projection optical system PL1 (and PL3, PL5) and the 2 nd projection optical system PL2 (and PL4, PL6) differently, the circumferential length Δ Dm from the center point of the illumination area IR1 (and IR3, IR5) to the center point of the illumination area IR2 (and IR4, IR6) on the mask M and the circumferential length Δ Ds from the center point of the projection area PA1 (and PA3, PA5) to the center point of the 2 nd projection area PA2 (and PA4, PA6) on the substrate P can be made the same length. At this time, since the projection area PA is a position shifted in the X direction (the 2 nd optical axis BX2 direction) with respect to the illumination area IR, the 1 st axis AX1 of the reticle retaining cylinder 21 and the 2 nd axis AX2 of the substrate support cylinder 25 are shifted in the 2 nd optical axis BX2 direction according to the shift amount of the projection area PA in the circumferential direction with respect to the illumination area IR.

As described above, in embodiment 2, in the reflection optical system 100, the imaging position of the projection image formed by the 2 nd projection light beam EL2b and the imaging position of the defective image formed by the leakage light from the 1 st projection light beam EL2a are made different in the scanning direction of the substrate P, and the leakage light can be blocked by the 1 st light blocking plate 111. Therefore, the reflective optical system 100 can block the leakage light projected onto the substrate P, and thus can appropriately project the projection image onto the substrate P.

In embodiment 2, in the reflection optical system 100, the 1 st projected light beam EL2a and the 2 nd projected light beam EL2b, that is, the 1 st incident visual field, the 1 st outgoing visual field, the 2 nd incident visual field, and the 2 nd outgoing visual field may be divided, or may partially overlap. That is, in embodiment 2, since it is not necessary to separate the fields of view of the 1 st projected light beam EL2a and the 2 nd projected light beam EL2b as in embodiment 1, the degree of freedom in the arrangement of various optical components of the reflection optical system 100 can be improved.

In embodiment 2, a 1/2 wave plate 104 is provided between the 1 st polarization beam splitter PBS1 and the refractive lens 71a, but the present invention is not limited to this configuration. For example, a1 st 1/4 wave plate may be disposed between the 1 st polarization beam splitter PBS1 and the refractive lens 71a, and a2 nd 1/4 wave plate may be disposed between the 2 nd polarization beam splitter PBS2 and the refractive lens 71 a. In this case, the 1 st 1/4 th wave plate and the 2 nd 1/4 th wave plate may be integrated.

[ embodiment 3 ]

Next, referring to fig. 8, an exposure apparatus U3 according to embodiment 3 will be described. In embodiment 3, in order to avoid redundant description with embodiment 2, only the portions different from embodiment 2 will be described, and the same components as those in embodiment 2 will be described with the same reference numerals as those in embodiment 2. Fig. 8 is a diagram showing a configuration of a projection optical system of the exposure apparatus according to embodiment 3. In the reflection optical system 100 of the projection optical system PL, the exposure apparatus U3 according to embodiment 2 differs in the scanning direction of the substrate P between the imaging position of the projection image formed by the 2 nd projection light beam EL2b and the imaging position of the defective image formed by the leak light. The exposure apparatus U3 according to embodiment 3 is configured such that the imaging position of the projection image formed by the projection light beam EL2 and the imaging position of the defective image formed by the leaked light are different in the depth direction (focus direction) in the reflection optical system 130 of the projection optical system PL. In fig. 8, only a part of the optical system 131 and the reflection optical system 130 are shown to simplify the description of embodiment 3. In fig. 8, the mask plane P1 and the substrate P are arranged in parallel along the XY plane, the principal ray of the 1 st projection light beam EL2a from the mask plane P1 is perpendicular to the XY plane, and the principal ray of the 2 nd projection light beam EL2b toward the substrate P is perpendicular to the XY plane.

In the projection optical system PL of embodiment 3, the partial optical system 131 has a refractive lens 71a and a1 st concave mirror 72. The refractive lens 71a and the 1 st concave mirror 72 have the same configuration as those of the first and second embodiments, and therefore, the description thereof is omitted. In the partial optical system 131, a plurality of lens components may be arranged between the refractive lens 71a and the 1 st concave mirror 72, as in embodiment 2.

The reflection optical system 130 includes a1 st polarization beam splitter (1 st reflection member) PBS1, a2 nd polarization beam splitter (2 nd reflection member) PBS2, a 1/2 wave plate 104, a1 st deflection member (1 st optical member and 3 rd reflection unit) 105, and a2 nd deflection member (2 nd optical member and 4 th reflection unit) 106. Note that although the 1 st polarization beam splitter PBS1, the 2 nd polarization beam splitter PBS2, 1/2 wave plate 104, the 1 st deflection member 105, and the 2 nd deflection member 106 are different in angle and the like in part from those of embodiment 2, the description thereof will be omitted since they have substantially the same configuration.

Here, fig. 8 illustrates a virtual 1 st projection light beam EL3 in which the 1 st projection light beam EL2a incident on the 1 st polarization beam splitter PBS1 from the mask surface P1 is plane-symmetric about the 1 st polarization splitting surface P10 of the 1 st polarization beam splitter PBS 1. At this time, the surface on which the virtual 1 st projected light beam EL3 is formed becomes the virtual mask surface P15. Fig. 8 shows a virtual 1 st projection light flux EL4 in which the 1 st projection light flux EL2a incident on the 1 st deflection member 105 from the 2 nd polarization beam splitter PBS2 is plane-symmetric about the 1 st reflection surface P12 of the 1 st deflection member 105. At this time, the plane on which the virtual 1 st projection light beam EL4 is formed becomes the virtual intermediate image plane P16.

The 1 st polarization beam splitter PBS1, the 2 nd polarization beam splitter PBS2, the 1 st deflection member 105, and the 2 nd deflection member 106 are configured to: the imaging position of the projected image formed by the 2 nd projection light beam EL2b reflected by the 2 nd polarization beam splitter PBS2 and the imaging position of the defective image formed by the leak light that is part of the 1 st projection light beam EL2a reflected by the 2 nd polarization beam splitter PBS2 are different in the depth direction of the focal point (i.e., in the direction of the principal ray of the imaging light beam). Specifically, the 1 st polarization beam splitter PBS1, the 2 nd polarization beam splitter PBS2, the 1 st deflection member 105, and the 2 nd deflection member 106 are arranged such that the imaging position of the projected image on the virtual mask surface P15 of the virtual 1 st projection light beam EL3 is made deeper in the depth direction and the imaging position of the defective image on the virtual intermediate image surface P16 of the virtual 1 st projection light beam EL4 is made shallower in the depth direction.

With such a configuration, a good projected image is formed on the substrate P by the 2 nd projection light beam EL2b reflected by the 2 nd polarization splitting surface P11 of the 2 nd polarization beam splitter PBS 2. In addition, leakage light as a part of the 1 st projection light beam EL2a reflected by the 2 nd polarization splitting plane P11 of the 2 nd polarization beam splitter PBS2 forms a defective image of the mask pattern on the front side of the substrate P. That is, the image forming position of the projected image formed by the 2 nd projection light beam EL2b becomes the projection area PA on the substrate P, and the image forming position of the defective image formed by the leakage light becomes the position between the 2 nd polarization beam splitter PBS2 and the substrate P. Therefore, since the imaging position of the defective image is located between the 2 nd polarization beam splitter PBS2 and the substrate P, the defective image generated by the leakage light projected onto the substrate P is in an extremely unclear state.

In this manner, since the 1 st polarization beam splitter PBS1, the 2 nd polarization beam splitter PBS2, the 1 st deflecting member 105, and the 2 nd deflecting member 106 differ in the depth direction in the image forming position of the projected image and the image forming position of the defective image, the reflection optical system 130 functions as a light amount reducing unit that reduces the amount of the leaked light projected onto the substrate P.

Further, the imaging position of the projected image on the virtual mask plane P15 of the virtual 1 st projection light beam EL3 is made deeper in the depth direction, and the imaging position of the defective image on the virtual intermediate image plane P16 of the virtual 1 st projection light beam EL4 is made shallower in the depth direction, so that the optical path from the mask plane P1 to the 1 st polarization beam splitter PBS1 is lengthened, and the optical path from the 2 nd polarization beam splitter PBS2 to the intermediate image plane P7 is shortened. Therefore, the optical path that is folded back from the 2 nd polarization beam splitter PBS2 to the 1 st polarization beam splitter PBS1 via the intermediate image plane P7 can be shortened.

As described above, in the reflection optical system 130 according to embodiment 3, the imaging position of the projection image formed by the 2 nd projection light beam EL2b and the imaging position of the defective image formed by the leak light from the 1 st projection light beam EL2a can be made different in the direction of the focal depth (direction along the principal ray of the imaging light beam). Therefore, since the reflection optical system 130 can make the leakage light projected onto the substrate P in an extremely unclear state, the amount of the leakage light projected onto the substrate P can be reduced, and the influence on the projection image projected onto the substrate P can be reduced.

In addition, since embodiment 3 does not require field separation as in embodiment 1 or a difference in incident position to the 2 nd polarization splitting plane P11 as in embodiment 2, the degree of freedom in design in the reflection optical system 130 can be further improved.

[ 4 th embodiment ]

Next, referring to fig. 9, the exposure apparatus U3 according to embodiment 4 will be described. In embodiment 4, for the sake of avoiding redundant description, only the portions different from embodiment 1 will be described, and the same components as those in embodiment 1 will be described with the same reference numerals as those in embodiment 1. Fig. 9 is a diagram showing the entire configuration of an exposure apparatus (substrate processing apparatus) according to embodiment 4. The exposure apparatus U3 according to embodiment 1 is configured to support a substrate P by a substrate support cylinder 25 having a support surface P2 as a circumferential surface, but the exposure apparatus U3 according to embodiment 4 is configured to support a substrate P in a planar shape.

In the exposure apparatus U3 according to embodiment 4, the substrate support mechanism 150 includes a pair of drive rollers 151 on which the substrate P is mounted. The pair of driving rollers 151 are rotated by the 2 nd driving unit 26 to move the substrate P in the scanning direction.

Therefore, the substrate support mechanism 150 guides the substrate P conveyed from the drive roller R4 from one drive roller 151 to the other drive roller 151, and mounts the substrate P on the pair of drive rollers 151. The substrate support mechanism 150 guides the substrate P mounted on the pair of driving rollers 151 to the driving roller R5 by rotating the pair of driving rollers 151 by the 2 nd driving unit 26.

At this time, since substrate P in fig. 9 is a plane substantially parallel to the XY plane, the principal ray of 2 nd projection light beam EL2b projected onto substrate P is perpendicular to the XY plane. When the principal ray of the 2 nd projection light beam EL2b projected onto the substrate P is perpendicular to the XY plane, the angle of the 2 nd polarization splitting plane P11 of the 2 nd polarization beam splitter PBS2 of the projection optical system PL is also changed as appropriate in accordance with the principal ray of the 2 nd projection light beam EL2 b.

In embodiment 4, as in the case of fig. 2, the circumferential length from the center point of the illumination region IR1 (and IR3, IR5) to the center point of the illumination region IR2 (and IR4, IR6) on the mask M is set to be substantially equal to the circumferential length from the center point of the projection region PA1 (and PA3, PA5) to the center point of the 2 nd projection region PA2 (and PA4, PA6) on the substrate P along the support surface P2 when viewed in the XZ plane.

In the exposure apparatus U3 of fig. 9, the mask holding cylinder 21 and the pair of driving rollers 151 are also rotated synchronously at a predetermined rotation speed ratio by the lower controller 16, and the image of the mask pattern formed on the mask surface P1 of the mask M is continuously repeatedly projected and exposed onto the surface of the substrate P mounted on the pair of driving rollers 151.

As described above, in embodiment 4, even when the substrate P is supported in a planar shape, the influence of leakage light on the projection image formed on the substrate P can be reduced, and therefore the projection image can be appropriately projected onto the substrate P.

In the above embodiments, the cylindrical mask M may be a reflective type or a transmissive type. In this case, a pattern of the light shielding film may be formed on the outer peripheral surface of a transparent cylindrical body (quartz tube or the like) having a constant thickness, and an illumination optical system and a light source section for projecting illumination light from the inside of the transparent cylindrical body toward the outer peripheral surface to the plurality of illumination regions IR1 to IR6 shown on the left side of fig. 3 may be provided inside the transparent cylindrical body. In the case of such transmitted illumination, the polarization beam splitter PBS and the 1/4 wave plate 41 shown in fig. 2, 4, and 7 can be omitted.

In each embodiment, a cylindrical mask M is used, but a typical flat mask may be used. In this case, the radius Rm of the cylindrical mask M described in fig. 2 is infinite, and the angle of the reflection surface P3 of the 1 st deflecting member 76 in fig. 2, for example, may be set so that the principal ray of the imaging light beam from the mask pattern is perpendicular to the mask surface.

In the above embodiments, a mask (hard mask) in which a static pattern corresponding to a pattern to be projected onto the substrate P is formed is used, but the following maskless exposure method is also possible: DMD (micro Mirror device) and/or SLM (spatial light modulation element) composed of a plurality of movable micromirrors are arranged at the positions of the illumination areas IR1 to IR6 of the plurality of projection optical units PL1 to PL6 (the positions of the object surfaces of the projection optical units), and the pattern is transferred to the substrate P while generating dynamic pattern light by the DMD or SLM in synchronization with the conveyance movement of the substrate P. In this case, the DMD and the SLM that generate the dynamic pattern correspond to the mask member.

Description of the reference numerals

1 device manufacturing system

2 substrate supply device

4 substrate recovery device

5 upper control device

11 light shield holding mechanism

12 substrate supporting mechanism

13 light source device

16 lower-level control device

21 light shield holding cylinder

25 substrate supporting cylinder

31 light source unit

32 light guide member

411/4 wave plate

51 collimating lens

52 fly-eye lens

53 condenser lens

54 cylindrical lens

55 field diaphragm for illumination

56 Relay lens

Part 61 of optical system

62 reflective optical system

63 projection field diaphragm

64 focus correction optical component

65 optical member for image shift

Optical component for 66-magnification correction

67 rotation correction mechanism

68 polarized light adjusting mechanism

71 group 1 lens

72 st concave mirror

76 st deflection member

77 nd 2 nd deflection unit

78 No. 3 deflection unit

79 th deflection member

91 st 1 prism

92 nd 2 nd prism

93 polarized light splitting plane

100 reflection optical system (embodiment 2)

1041/2 wave plate (embodiment 2)

105 deflection unit 1 (2 nd embodiment)

106 deflection unit No. 2 (embodiment No. 2)

1071/2 wave plate (embodiment 2)

111 st light shielding plate (2 nd embodiment)

112 the 2 nd light shielding plate (2 nd embodiment)

130 reflection optical system (embodiment 3)

131 part of the optical system (embodiment 3)

150 substrate supporting mechanism (embodiment 4)

151 drive roller (4 th embodiment)

P substrate

FR1 supply roller

Roll for recovery of FR2

U1-Un processing device

U3 Exposure apparatus (substrate processing apparatus)

M light shield

AX1 Axis 1

AX 22 nd shaft

P1 mask surface

P2 bearing surface

P3 No. 1 reflective surface

P4 No. 2 reflective surface

P5 No. 3 reflective surface

P6 No. 4 reflective surface

P7 intermediate image plane

P10 polarization 1 st separating surface (embodiment 2)

P11 polarization splitting surface No. 2 (embodiment No. 2)

P12 reflection surface 1 (embodiment 2)

P13 reflection surface No. 2 (embodiment No. 2)

P15 virtual mat (3 rd embodiment)

P16 virtual intermediate image plane (embodiment 3)

EL1 illumination beam

EL2a projection light Beam 1

EL2b 2 nd projection beam

EL3 virtual No. 1 projection beam (No. 3 embodiment)

EL4 virtual No. 1 projection beam (No. 3 embodiment)

Radius of curvature Rm

Radius of curvature of Rfa

CL center plane

PBS polarization beam splitter

PBS1 polarizing beam splitter 1 (embodiment 2)

PBS2 polarization beam splitter 2 (embodiment 2)

IR 1-IR 6 illumination area

IL 1-IL 6 illumination optical system

ILM illumination optical assembly

PA 1-PA 6 projection area

PL 1-PL 6 projection optical system

PLM projection optics assembly

BX 11 st optical axis

BX 22 nd optical axis

Claims (22)

1. A substrate processing apparatus for forming a projection image of a pattern of a mask member on a substrate,

the substrate processing apparatus includes a projection optical system including a light guide optical system and a partial optical system that receives a1 st projection light from the mask member and forms an intermediate image of the pattern on a predetermined intermediate image plane, the light guide optical system guiding the 1 st projection light emitted from the partial optical system to the intermediate image plane and guiding the 1 st projection light having passed through the intermediate image plane to the partial optical system again as a2 nd projection light, the projection optical system forming a projection image obtained by re-imaging the intermediate image on the substrate by the partial optical system receiving the 2 nd projection light,

the part optical system includes: a lens component for inputting the 1 st projection light and the 2 nd projection light, and a reflection optical component for reflecting the 1 st projection light and the 2 nd projection light which pass through the lens component,

the 1 st projection light from the pattern is incident on the lens component, reflected by the reflective optical component, exits the lens component, and reaches the intermediate image plane,

the 2 nd projection light from the intermediate image plane is incident on the lens component, reflected by the reflective optical component, emitted from the lens component, and reaches the substrate,

the light guide optical system includes: a1 st optical component that makes the 1 st projection light from the pattern incident to the lens component; a2 nd optical component for making the 1 st projection light emitted from the lens component incident to the intermediate image plane; a3 rd optical component that causes the 2 nd projection light from the intermediate image plane to be incident on the lens component; a4 th optical component for making the 2 nd projection light emitted from the lens component incident on the substrate,

separating a1 st incident field of the 1 st projection light incident to the lens part, a1 st outgoing field of the 1 st projection light emitted from the lens part, a2 nd incident field of the 2 nd projection light incident to the lens part, and a2 nd outgoing field of the 2 nd projection light emitted from the lens part from each other by each of the 1 st to 4 th optical parts.

2. The substrate processing apparatus according to claim 1,

further comprising a mask holding member for holding the mask member and a substrate supporting member for supporting the substrate via a supporting surface,

the pattern surface of the mask member has a1 st circumferential surface having a1 st radius of curvature about a1 st axis,

the support surface of the substrate support member has a2 nd circumferential surface having a2 nd radius of curvature about a2 nd axis,

the 1 st axis is parallel to the 2 nd axis,

the projection optical system is provided in plurality corresponding to each of a plurality of illumination regions arranged on a pattern surface of the mask member, and guides the 1 st projection light from the plurality of illumination regions on the pattern surface to the plurality of intermediate image surfaces and guides the 2 nd projection light from the plurality of intermediate image surfaces to each of a plurality of projection regions arranged on the substrate.

3. The substrate processing apparatus according to claim 2,

in a case where the plurality of projection optical systems are arranged in 2 rows in the circumferential direction of the reticle member and the projection area of the substrate in each projection optical system is circumferentially offset with respect to the illumination area of the pattern surface, the position of the 2 nd axis with respect to the 1 st axis in the reticle holding member and the substrate supporting member is a position different from the offset amount of the projection area with respect to the illumination area in the circumferential direction,

a circumferential length connecting a center of the illumination region corresponding to the projection optical system in the 1 st row and a center of the illumination region corresponding to the projection optical system in the 2 nd row in a circumferential direction of the mask member is equal to a circumferential length connecting a center of the projection region corresponding to the projection optical system in the 1 st row and a center of the projection region corresponding to the projection optical system in the 2 nd row in a circumferential direction of the substrate.

4. A substrate processing apparatus for forming a projected image of a pattern of a mask member on a substrate, the substrate processing apparatus comprising:

a projection optical system including a light guide optical system and a partial optical system that receives the 1 st projection light from the mask member and forms an intermediate image of the pattern on a predetermined intermediate image surface, the light guide optical system guiding the 1 st projection light emitted from the partial optical system to the intermediate image surface and guiding the 1 st projection light that has passed through the intermediate image surface to the partial optical system again as a2 nd projection light, the projection optical system forming a projection image obtained by re-imaging the intermediate image on the substrate by the partial optical system receiving the 2 nd projection light; and

and a light amount reducing unit that reduces the amount of light projected onto the substrate by using the 1 st projection light as leakage light, the light amount reducing unit being configured to differentiate an imaging position of the projection image formed by the 2 nd projection light from an imaging position of a defective image formed by leakage light of a part of the 1 st projection light.

5. The substrate processing apparatus according to claim 4,

the part optical system includes: a lens component for inputting the 1 st projection light and the 2 nd projection light, and a reflection optical component for reflecting the 1 st projection light and the 2 nd projection light which pass through the lens component,

the 1 st projection light from the pattern is incident on the lens component, reflected by the reflective optical component, exits the lens component, and reaches the intermediate image plane,

the 2 nd projection light from the intermediate image plane is incident on the lens component, reflected by the reflective optical component, emitted from the lens component, and reaches the substrate.

6. The substrate processing apparatus according to claim 5,

the light amount reducing section is the light guide optical system,

the light amount reducing section includes:

a1 st polarization beam splitter, wherein the 1 st polarization beam splitter reflects the 1 st projection light from the pattern and makes the 1 st projection light incident on the lens assembly, and transmits the 2 nd projection light from the intermediate image plane and makes the 2 nd projection light incident on the lens assembly;

a wave plate for polarizing the 1 st projection light and the 2 nd projection light emitted from the 1 st polarization beam splitter;

a2 nd polarization beam splitter, wherein the 2 nd polarization beam splitter transmits the 1 st projection light emitted from the lens component and passing through the wave plate to be incident on the intermediate image plane, and reflects the 2 nd projection light emitted from the lens component and passing through the wave plate to be directed onto the substrate;

a1 st optical member for causing the 1 st projection light transmitted through the 2 nd polarization beam splitter to be incident on the intermediate image plane; and

a2 nd optical component, wherein the 2 nd optical component makes the 2 nd projection light from the intermediate image surface incident to the 1 st polarization beam splitter.

7. The substrate processing apparatus according to claim 6,

the light amount reducing section further includes a1 st light shielding plate, the 1 st light shielding plate being disposed between the 2 nd polarization beam splitter and the substrate,

the light amount reducing section makes an imaging position of the projection image formed on the substrate by the 2 nd projection light reflected by the 2 nd polarization beam splitter and an imaging position of the defective image different in a direction along a surface of the substrate,

the defective image is an image formed on the substrate by leakage of a part of the 1 st projection light reflected by the 2 nd polarization beam splitter without passing through the 2 nd polarization beam splitter,

the 1 st light shielding plate is disposed at a position where the leakage light from the 2 nd polarization beam splitter toward the substrate is shielded.

8. The substrate processing apparatus according to claim 7,

the light amount reducing section further includes a2 nd light blocking plate that blocks the leakage light from the 1 st polarization beam splitter toward the 2 nd polarization beam splitter.

9. The substrate processing apparatus according to claim 6,

the light amount reducing unit forms an image of the projection image formed on the substrate by the 2 nd projection light reflected by the 2 nd polarization beam splitter at a position different from an image of the defective image in a depth of focus direction, the defective image being an image formed by leakage of a part of the 1 st projection light reflected by the 2 nd polarization beam splitter without being transmitted by the 2 nd polarization beam splitter.

10. The substrate processing apparatus according to claim 9,

an optical path of the 1 st projection light from the pattern to the 1 st polarization beam splitter is set longer than an optical path of the 1 st projection light from the 2 nd polarization beam splitter to the intermediate image plane.

11. The substrate processing apparatus according to any one of claims 1 to 10,

the substrate is scanned relative to the shadowgraph image,

the projection image is limited to an elongated region in which a ratio of a length in a scanning direction in which the substrate is scanned to a length in a width direction orthogonal to the scanning direction, that is, a length in the scanning direction/a length in the width direction is 1/4 or less.

12. The substrate processing apparatus according to any one of claims 1 to 10,

further comprising an illumination optical system for guiding illumination light to the pattern surface of the mask member,

the illumination light is laser light.

13. The substrate processing apparatus according to any one of claims 4 to 10,

further comprising a mask holding member for holding the mask member and a substrate supporting member for supporting the substrate via a supporting surface,

the pattern surface of the mask member has a1 st circumferential surface having a1 st radius of curvature about a1 st axis,

the support surface of the substrate support member has a2 nd circumferential surface having a2 nd radius of curvature about a2 nd axis,

the 1 st axis is parallel to the 2 nd axis,

the projection optical system is provided in plurality corresponding to each of a plurality of illumination regions arranged on a pattern surface of the mask member, and guides the 1 st projection light from the plurality of illumination regions on the pattern surface to the plurality of intermediate image surfaces and guides the 2 nd projection light from the plurality of intermediate image surfaces to each of a plurality of projection regions arranged on the substrate.

14. The substrate processing apparatus of claim 13,

in a case where the plurality of projection optical systems are arranged in 2 rows in the circumferential direction of the reticle member and the projection area of the substrate in each projection optical system is circumferentially offset with respect to the illumination area of the pattern surface, the position of the 2 nd axis with respect to the 1 st axis in the reticle holding member and the substrate supporting member is a position different from the offset amount of the projection area with respect to the illumination area in the circumferential direction,

a circumferential length connecting a center of the illumination region corresponding to the projection optical system in the 1 st row and a center of the illumination region corresponding to the projection optical system in the 2 nd row in a circumferential direction of the mask member is equal to a circumferential length connecting a center of the projection region corresponding to the projection optical system in the 1 st row and a center of the projection region corresponding to the projection optical system in the 2 nd row in a circumferential direction of the substrate.

15. A device manufacturing system, having:

the substrate processing apparatus of any one of claims 1 to 14; and

and a substrate supply device for supplying the substrate to the substrate processing device.

16. A device manufacturing method, comprising:

projecting and exposing a pattern of the reticle member on the substrate using the substrate processing apparatus of any one of claims 1 to 14;

forming a device corresponding to the pattern of the mask member by processing the substrate subjected to the projection exposure.

17. A substrate processing apparatus for projection-exposing a light beam from a pattern in a slit-shaped field area on an object plane onto an object to be exposed, the substrate processing apparatus comprising:

a projection optical system including an imaging lens group that causes a light flux from a pattern in the field of view region to enter, and a mirror disposed at a pupil plane or a position near the pupil plane of the imaging lens group, the mirror reflecting the light flux from the field of view region toward the imaging lens group, thereby forming an image plane conjugate to the field of view region on the object plane side; and

a folding mirror that arranges the field region at a1 st position along a reference plane including the object plane or the image plane and intersecting an optical axis of the projection optical system, arranges a slit-like intermediate image of the field region, which is first imaged by the projection optical system, at a2 nd position different from the 1 st position with respect to a width direction intersecting a longitudinal direction of the slit along the reference plane, and reflects a light flux that generates the intermediate image so as to pass through a3 rd position different from any of the 1 st position and the 2 nd position with respect to the width direction of the slit along the reference plane and fold back toward the projection optical system,

a projected image optically conjugate with the intermediate image is formed by the projection optical system.

18. The substrate processing apparatus of claim 17, wherein,

the projection optical system includes: a1 st reflecting member for reflecting a1 st light flux from a pattern in the slit-shaped view field region on the object plane and making the reflected light flux incident on the imaging lens group; a2 nd reflecting member for reflecting the 2 nd light flux emitted from the projection optical system toward the object to be exposed in order to generate the projection image,

the 1 st light flux reflection portion of the 1 st reflection member and the 2 nd light flux reflection portion of the 2 nd reflection member are separately arranged in a width direction of the slit along the reference surface.

19. The substrate processing apparatus according to claim 18,

the folding mirror includes: a3 rd reflection unit that reflects the light flux emitted from the projection optical system in a direction along the reference surface in order to generate the intermediate image; a4 th reflection unit that reflects the light beam reflected by the 3 rd reflection unit toward the projection optical system by the 4 th reflection unit,

either one of the 3 rd reflecting part and the 4 th reflecting part is disposed between the reflecting part of the 1 st reflecting member and the reflecting part of the 2 nd reflecting member with respect to a direction along the reference surface.

20. The substrate processing apparatus according to claim 19,

the positions of the respective reflection portions of the 1 st reflection member and the 2 nd reflection member and the positions of the 3 rd reflection portion and the 4 th reflection portion of the folding mirror are made different in the direction of the optical axis of the projection optical system.

21. The substrate processing apparatus according to any one of claims 18 to 20,

the 1 st reflecting member and the 2 nd reflecting member are constituted by polarization beam splitters.

22. The substrate processing apparatus according to claim 19 or 20,

the reflection portion of the 1 st reflection member, the reflection portion of the 2 nd reflection member, and the 3 rd reflection portion and the 4 th reflection portion of the folding mirror are each formed in a rectangular shape corresponding to the slit-shaped field of view region, and are arranged so as to be separated from each other in a width direction of the slit along the reference surface.