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GR1008175B - Variable capacity pressure sensor and manufacture method thereof - Google Patents

Variable capacity pressure sensor and manufacture method thereof

Info

Publication number
GR1008175B
GR1008175B GR20130100097A GR20130100097A GR1008175B GR 1008175 B GR1008175 B GR 1008175B GR 20130100097 A GR20130100097 A GR 20130100097A GR 20130100097 A GR20130100097 A GR 20130100097A GR 1008175 B GR1008175 B GR 1008175B
Authority
GR
Greece
Prior art keywords
pressure sensor
manufacture method
variable capacity
capacity pressure
plates
Prior art date
Application number
GR20130100097A
Other languages
Greek (el)
Inventor
Θεοδωρα-Αικατερινη Χαραλαμπου Σπυροπουλου
Αθανασιος Θεοδωρου Κολλιας
Γεωργιος Παναγιωτη Μαζαρακης
Original Assignee
Θεων Αισθητηρες Α.Ε.Β.Ε.,
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Θεων Αισθητηρες Α.Ε.Β.Ε., filed Critical Θεων Αισθητηρες Α.Ε.Β.Ε.,
Priority to GR20130100097A priority Critical patent/GR1008175B/en
Publication of GR1008175B publication Critical patent/GR1008175B/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

Novelty: a variable capacity pressure sensor and manufacture method thereof is disclosed. Technical features: a parallel arrangement of plates where the one electrode is calked and the other is a suspended deformed membrane. The two plates are conducible since they are composed of boron-implanted silicone. The suspended membrane is either circular or has the shape of a ring. Parallel arrangements of cycles or rings increase the whole capacity change. Another potential design of the sensor is the formation of homocentric rings while different architectures of same can also be realized. Thermal effects and effects created by the variants of the manufacture process can be minimized upon potential incorporation of a reference condenser.
GR20130100097A 2013-02-19 2013-02-19 Variable capacity pressure sensor and manufacture method thereof GR1008175B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GR20130100097A GR1008175B (en) 2013-02-19 2013-02-19 Variable capacity pressure sensor and manufacture method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GR20130100097A GR1008175B (en) 2013-02-19 2013-02-19 Variable capacity pressure sensor and manufacture method thereof

Publications (1)

Publication Number Publication Date
GR1008175B true GR1008175B (en) 2014-04-17

Family

ID=50732366

Family Applications (1)

Application Number Title Priority Date Filing Date
GR20130100097A GR1008175B (en) 2013-02-19 2013-02-19 Variable capacity pressure sensor and manufacture method thereof

Country Status (1)

Country Link
GR (1) GR1008175B (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080053236A1 (en) * 2006-08-31 2008-03-06 Evigia Systems, Inc. Capacitive pressure sensor and method therefor
US7737514B1 (en) * 2008-02-21 2010-06-15 Yee-Chung Fu MEMS pressure sensor using area-change capacitive technique
WO2012040211A2 (en) * 2010-09-20 2012-03-29 Fairchild Semiconductor Corporation Microelectromechanical pressure sensor including reference capacitor
EP2520917A1 (en) * 2011-05-04 2012-11-07 Nxp B.V. MEMS Capacitive Pressure Sensor, Operating Method and Manufacturing Method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080053236A1 (en) * 2006-08-31 2008-03-06 Evigia Systems, Inc. Capacitive pressure sensor and method therefor
US7737514B1 (en) * 2008-02-21 2010-06-15 Yee-Chung Fu MEMS pressure sensor using area-change capacitive technique
WO2012040211A2 (en) * 2010-09-20 2012-03-29 Fairchild Semiconductor Corporation Microelectromechanical pressure sensor including reference capacitor
EP2520917A1 (en) * 2011-05-04 2012-11-07 Nxp B.V. MEMS Capacitive Pressure Sensor, Operating Method and Manufacturing Method

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Legal Events

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PG Patent granted

Effective date: 20140515