DE2035969C

DE2035969C - Integrable current-controlled power source

Info

Publication number: DE2035969C
Application number: DE19702035969
Authority: DE
Inventors: Jochen Dipl.-Ing. 8000 München Müller
Original assignee: Siemens AG
Current assignee: Siemens AG
Filing date: 1970-07-20
Publication date: 1973-08-09

Description

benötigt, kommt im Hinblick auf den technischen Auf- mathematischen Abhandlung nachgewiesen werden, wand bei integrierten Schaltungen bekanntlich keine Hierzu sind in der Figur die für die mathematische Bedeutung zu, da sich Transistoren, insbesondere in Abhandlung erforderlichen Spannungen und Ströme monolithischer Technik, einfach und billig herstellen angegeben, und zwar ist der in den Anschluß 2 hineinlassen und darüber hinaus einen minimalen Platz- 5 fließende Wechselstrom mit /»,die am Anschluß 2 gegen bedarf in Anspruch nehmen. Masse wirksame Wechselspannung mit m, die am An-required, comes to be demonstrated with regard to the technical on-mathematical treatise, wall in the case of integrated circuits, as is well known, none of these are shown in the figure for the mathematical Significant too, as transistors, especially in treatise required voltages and currents monolithic technology, simple and cheap to manufacture, and that is let into the connection 2 and, in addition, a minimal space 5 flowing alternating current with / », which at connection 2 against as needed. Mass effective alternating voltage with m, which is

Besteht die Forderung, daß der Betrag des am Aus- Schluß 1 gegen Masse auftretende WechselspannungIs there a requirement that the amount of the alternating voltage occurring at Exclusion 1 to ground

gang der Stromquelle auftretenden Gleichstroms gleich mit «2 und die am gemeinsamen VerbindungspunktThe direct current occurring at the power source is equal to «2 and that at the common connection point

dem Betrag des in den Eingang der Stromquelle hinein- des Widerstandes R, des Emit.ers des Transistors 7V3. the amount of the resistor R, the emitter of the transistor 7V3, going into the input of the current source.

fließenden Gleichstroms ist, so kann diese Forderung io des Kollektors und der Basis des Transistors Tr 2 undflowing direct current is, so this requirement io of the collector and the base of the transistor Tr 2 and

in einfacher Weise dadurch erfüllt werden, daß der der Basis des Transistors TrI gegen Masse auftretendebe met in a simple manner that the base of the transistor TrI occurring to ground

Widerstand wenigstens so groß gewählt wird, daß der Wechselspannung mit «1 bezeichnet. Neben diesenResistance is chosen to be at least so large that the alternating voltage is denoted by «1. Besides these

ihn durchfließende, sich dem Ausgangsstrom über- Größen erscheint in der Rechnung noch die Steilheit SQuantities flowing through it that exceed the output current, the slope S also appears in the calculation

lagernde Gleichstrom einen vernacLlässigbar kleinen der Transistoren, die für sämtliche Transistoren alsstored direct current is a negligibly small amount of the transistors used for all transistors

Wert hat. 15 gleich angenommen werden kann und gleich demHas value. 15 can be assumed to be the same and equal to that

An Hand einer kurzen mathematischen Betrachtung reziproken Wert des Emitterwiderstandes ist. Eni-On the basis of a brief mathematical consideration, the reciprocal value of the emitter resistance is. Eni-

in Verbindung mit der in der Zeichnung dargestellten sprechend den in der Figur angenommenen Strömenin connection with the currents shown in the drawing speaking of the currents assumed in the figure

Figur soll die Erfindung im folgenden noch näher er- und Spannungen ergibt sich für den Wechselstrom /«Figure is intended to explain the invention in more detail below and voltages result for the alternating current / «

läutert werden. L = (u2 - ul) ■ S. (I)to be purified. L = (u2 - ul) ■ S. (I)

Die Figur zeigt die ernndungsgemäße Stromquelle aoThe figure shows the current source ao according to the nomination

mit den Transistoren Tr 1 bis TrA sowie dem im Die Summe aus dem Wechselstrom i_a und dem Emitterzweig des Transistors 7>4 angeordneten Wider- durch den Widerstand R fließenden Wechselstrom erstand R. Alle vier Transistoren sind npn-Transistoren. gibt sich zuwith the transistors Tr 1 to Tr and the arose in the sum of the alternating current i _a and the emitter branch of the transistor 7> 4 arranged resistors flowing through the resistor R AC R. All four transistors are npn transistors. admits himself

DieEmitterderTransistoren7Vlund7V21iegenaufdem . , _ID „./0 . i/d\ n\\ The emitters of the transistors 7Vl and 7V21 are on the. , _ID "./0. i / d \ n \\

negativen BczugspotenUal V— und der Kol'ektor des asnegative reference potentials Ual V— and the col'ector des as

Transistors Tr4 auf dem positiven ßezugspotential V \ . Ferner giltTransistor Tr4 at the positive pull-out potential V \. Furthermore applies

Der Kollektor des Transistors Tr 1 ist mit dem den , „1 c o; mn Eingang darstellenden Anschluß 1 der stromgesteuerten Stromquelle verbunden und der Kollektor des Hierin bedeutet Ri der Innenwiderstand, den die Transistors Tr 3 mit dem den Ausgang der strom- 30 Schaltung vom Anschluß 1 gegen Masse sieht. Durch gesteuerten Stromquelle darstellenden Anschluß 2. In Einsetzen der Gleichung (UI) in Gleichung (I) ergibt den Anschluß 1 ist ein vom nicht dargestellten posi- sichThe collector of the transistor Tr 1 is connected to the “1 co; Connected to the input terminal 1 of the current-controlled current source and the collector of the Ri means the internal resistance that the transistor Tr 3 sees with the output of the current circuit from terminal 1 to ground. By means of a controlled current source representing terminal 2. Inserting the equation (UI) into equation (I) results in the terminal 1 is a positive from the not shown

tiven Bezugspotential V+ her kommender Referenz- , ._ . ις,γ i-S Ri) (IV) strom Ir eingeprägt, der den in den Anschluß 2tive reference potential V + coming reference, ._. ις, γ iS Ri) (IV) current Ir impressed, which feeds into the connection 2

hineinfließenden, vom Referenzstrom //· abhängigen 35 und durch Einsetzen der Gleichung (IV) in GIe',-flowing in, dependent on the reference current // and by inserting equation (IV) into GIe ', -

Gleichstrom / bedingt. chung (II)Direct current / conditional. chung (II)

Zunächst sei kurz die Funktion der aus den Transistoren TrI bis 7V3 bestehenden stromgesteuerten j_al\ ^ - ^ _ . -\ — — " . (V) Stromquelle für sich kurz erläutert. Der in den An- \ 1 H- S Ri R-Sj R
Schluß 1 hineinfließende Referenzgleichstrom Ir findet 40First, let us briefly describe the function of the current-controlled j _a l \ ^ - ^ _ consisting of the transistors TrI to 7V3. - \ - - ". (V) Current source briefly explained for itself. The in the an \ 1 H- S Ri R-Sj R
Final 1 flowing reference direct current Ir finds 40

infolge der zwischen den Transistoren Tr 1 und 7>3 Da im allgemeinen die Ausdrücke SR und SRi sehras a result of the between the transistors Tr 1 and 7> 3 Da in general the terms SR and SRi very much

bestehenden Gegenkopplung eine niederohmige Ein- groß gegen 1 sind, ergibt sich mit guter Näherungexisting negative feedback are a low-resistance one-large against 1, results with a good approximation

gangsimpedanz vor. Die Spannungsschwankungen am .· ^ _ß ty\) input impedance. The voltage fluctuations on the. ^ _Ss ty \)

Anschluß 1 treten praktisch in gleicher Größe auch / « ~Port 1 also have practically the same size / «~

am Emitter des Transistors 7>3 und damit auch an 45 Der ausgangsseitige Widerstand der stromgesteuerder Basis des Transistors TrI auf. Die an der Basis des ten Stromquelle nach der Erfindung ist also gleich dem Transistors Tr 1 wirksamen Spannungsschwankungen negativen Wert des Widerstandes R. Physikalisch gesteuern diesen Transistor in dem Sinne aus, daß der sehen kommt dieses Ergebnis dadurch zustande, daß Referenzgleichstrom Ir praktisch ungehindert in den der durch den Widerstand R fließende Wechselstrom Kollektor des Transistors Tr 1 hineinfließen kann. 50 infolge der Gegenkopplung zwischen den Transistoren Somit ist die Eingangsimpedanz für den Referenz- TrI und TrS praktisch ausschließlich über die Einittergleichstrom gleich der reziproken Steilheit S des Kollektor-Strecke des Transistors 7>3 gegen den AnTransistors TrI. Da alle drei Transistoren als unter Schluß 2 fließt.at the emitter of the transistor 7> 3 and thus also at 45 The output-side resistance of the current-controlled base of the transistor TrI. The at the base of the th power source according to the invention is equal to the transistor Tr 1 effective voltage fluctuations negative value of the resistor R. Physically control this transistor in the sense that the see this result comes about by the fact that reference direct current Ir is practically unhindered in the the alternating current collector of the transistor Tr 1 flowing through the resistor R can flow in. 50 due to the negative feedback between the transistors. Thus, the input impedance for the reference TrI and TrS is practically exclusively over the one-emitter direct current equal to the reciprocal slope S of the collector path of the transistor 7> 3 against the AnTransistor TrI. Since all three transistors flow as below circuit 2.

sich gleich angesprochen werden können, ist somit der Durch Wahl der Größe des Widerstandes R kann in den Anschluß 2 hineinfließende Strom / gleich dem 55 der negative Widerstand der Stromquelle in weiten in den Anschluß 1 hineinfließenden Referenzgleich- Grenzen eingestellt werden. Für manche Anwendungsstrom Ir. Entsprechendes gilt für einen dem Referenz- fälle ist es in diesem Zusammenhang zweckmäßig, gleichstrom Ir überlagerten Wechselstrom, der am die Schaltung so auszuführen, daß der Widerstand R Anschluß 2 als ein dem Gleichstrom / überlagerter als einstellbarer Widerstand extern anschließbar ist. Wechselstrom gleicher Amplitude in Erscheinung tritt. 60 Bei der in der Figur dargestellten stromgesteuerlenBy choosing the size of the resistor R , the current flowing into the connection 2 / equal to the negative resistance of the current source can be set within wide reference equal limits flowing into the connection 1. For some application current Ir. The same applies to one of the reference cases, in this context it is expedient to use direct current Ir superimposed alternating current on the circuit in such a way that resistor R terminal 2 can be externally connected as an adjustable resistance superimposed on the direct current /. Alternating current of the same amplitude appears. 60 In the flow control shown in the figure

Durch Erweiterung der aus den Transistoren 7VI Stromquelle mit negativem Widerstand sind die Tran-By expanding the current source from the transistors 7VI with negative resistance, the trans-

bis 7V3 bestehenden Stromquelle durch den Transistor sistoren als η pn-Transistoren ausgeführt. Die Schal-up to 7V3 existing current source through the transistor sistors designed as η pn-transistors. The scarf

TrA mit dem in seiner Emitterzuleitung angeordneten lung läßt sich selbstverständlich in gleicher Weise in TrA with the arrangement arranged in its emitter lead can of course be converted into

Widerstand R wird gemäß der Erfindung am An- pnp-Transistoren ausführen. Schaltbildmäßig sindAccording to the invention, resistor R is implemented on the anpnp transistors. Are according to the circuit diagram

Schluß 2 gegen Masse wechselstrommäßig ein negativer 65 hierzu lediglich die Pfeile der Transistoren sowie dieConclusion 2 to ground a negative 65 in terms of alternating current, only the arrows of the transistors and the

Widerstand wirksam, dessen Betrag praktisch gleich Pfeile des Referenzgleichstroms Ir und des Gleich-Resistance effective, the amount of which is practically the same as arrows of the reference direct current Ir and the direct current

der Größe des Widerstandes R ist. Stroms / umzukehren und die Bezugspotentiale V \- the size of the resistor R. Current / reverse and the reference potentials V \ -

Dieser Sachverhalt soll an Hand einer kurzen und V— miteinander zu vertauschen. Die TransistorenThis fact should be exchanged with the help of a short and V-. The transistors

7>1 bis TrA können in bekannter Weise auch durch Ersatztransistoren, beispielsweise Superpaare oder Supertripletts, realisiert sein.
Für manche Anwendungsfälle ist es zweckmäßig, TrA komplex zu gestalten, um hierdurch einen komplexen negativen ausgangsseitigen Widerstand der stromgesteuerten Stromquelle zu verwirklichen. Beispielsweise läßt sich mittels dieser Maßnahme eine7> 1 to TrA can also be implemented in a known manner by substitute transistors, for example super pairs or super triplets.
For some applications, it is expedient to make TrA complex in order to achieve a complex negative output-side resistance of the current-controlled current source. For example, by means of this measure, a

den Widerstand R im Ernitterzweig des Transistors 5 Phasenkompensation durchführen. carry out the resistor R in the emitter branch of the transistor 5 phase compensation.

Hierzu 1 Blatt Zeichnungen 1 sheet of drawings

Claims

J> to 348, in particular on p. 344, Fig. 6a, a patent claim is given: such a power source which can be used up to frequencies of the order of 1 MHz

1. Integrable current-controlled current source with and only consists of two transistors and a diode, an input for the controlling current and 5. The diode is expediently also an output for the controlled current, implemented as a transistor, the base and collector of which, consisting of three transistors of the same conductivity, are connected to one another. The three capacitance type transistors, of which the first transistor is of the same conductivity type. Your combination of a first reference potential circuit is made in such a way that the first transistor emitter is connected in parallel with the emitter and with its base the io with its base and the collector of the second transistor emitter connected in parallel with the emitter and with its base the base is, while its collector connected to the base and the collector of the second transistor in parallel with the third transistor is connected, while its collector connected to the base of the third transistor forms the input of the transistor whose emitter is connected the base and the 15 current source forms and the collector of the third collector of the second transistor is connected to the transistor, the emitter of which is connected to the base and the Kolist, the output, characterized by the fact that a fourth transistor is connected to the second transistor (JrA) Outputs the power source.

of the conductivity type of the other transistors The invention is based on the object

{Tr I, 7> 2, TrS) is provided, the collector 20 of which is the functional range of the known upstream of a second reference potential (V +) described , and a controlled current source with simple means to expand its base-emitter path in series with a Hch.

emitter-side resistance (R) the collector- This object is achieved according to the invention

Emitter path of the third transistor (Tr 3) solved that the current-controlled current source is a four-parallel. 35 th transistor of the conductivity type of the rest

2. Current source according to claim 1, characterized GE transistors is assigned, the collector of which indicates that the resistor (R) is at least a second reference potential and whose base is chosen so large that the emitter path flowing through it is in series with an emitter-side the output direct current (/) superimposed resistance of the collector-emitter path of the third direct current a negligibly small value 30 transistor is parallel.

has. With integrated electronic semiconductor circuits

3. Power source according to claim 1 or 2, characterized gene often occur unavoidable loss resistances, characterized in that the resistor (R) adjustable, which are sometimes extremely disturbing. This is and can be connected externally. especially the case when the semiconductor

4. Current source according to one of the preceding 35 circuit replacement for a switching element, in particular claims, characterized in that the one coil is. The effective resistance (R) in the equivalent circuit is a complex resistance. Loss resistances reduce the quality of the switching element implemented by them in an undesirable manner. If necessary, negative impedance converters must be

40 ter are provided for the necessary de-attenuation in the sense of a compensation of loss resistances ensure, to care.

The invention relates to an integrable device. The invention is based on that which is known per se

current-controlled current source with an input for knowledge assumed that the desired the controlling current and an output for the attenuation can also be brought about by the fact that controlled electricity. a power source already present in the circuit

When designing electronic semiconductor scarf, suitable measures are taken so that they In integrated technology, it is also with regard to the function of a negative resistance an optimal use of what is available here. Such a circuit is through the thick-film, thin-film and 50 literature reference »IEEE Transactions on Circuits monolithic technology is required, the "Circuit Theory", Vol. CT-12, June 1965, pp. 299 and 300, without Coils and, as far as possible, also given with one. However, this circuit also needs the Minimum of capacitors and resistors to both transistors four resistors that are in one realize. integrated circuit is known to be a significant

Which have space requirements in such electronic semiconductor circuits and should therefore be avoided as far as possible gen are primarily used transistors. The same applies to those in German are in contrast to the classic amplifier tube Auslegeschrift 1 283 909 in connection with a current-controlled elements, the solution specified for their flawlessly integrable gyrator circuit, Function within the overall circuit that often requires nine electrical power sources in addition to the two transistors. Power sources allow 60 booths needed.

In contrast to these known solutions, the functional independence

efficiency of such circuits from the supply means that the circuit according to the invention is only one voltage. In general, they are integrated in a single resistor, the size of which as indicated later Semiconductor circuit a larger number of such hand a mathematical consideration still shown Power sources required. You in turn let yourself be at 65, with the size of the circuit Realize transistors and resistors. realized negative resistance in a wide range

In the literature reference »IEEE Journal of Solid-State Scope is identical. The fact that Circuits «. Vol. SC-3, No. 4, December 1968, p. 341 the circuit according to the invention has four transistors