DE1064556B - Use of a transistor with partially falling characteristics for switching with short jump times - Google Patents

Description

GERMAN

For certain switching tasks, especially in the fields of telecommunications technology and information processing, you need electronic switches that work with the help of an electron or light beam be operated. One can with such an arrangement within an extraordinarily press a large number of switches for a short time. It is already known to use transistors as controllable switches to be used on a semiconductor basis. Tip transistors had to be used if the Switches should work as tiltable structures, d. H. if the switching status also after termination of the Irradiation should be maintained.

The main patent application has a new semiconductor component, a transistor with partially falling Characteristic for switching with short jump times and with extensive p-n transitions on the Emitter and collector to the subject, in which a stream of majority charge carriers in front of the emitter generates a potential and thereby increases the injection of minority charge carriers at the emitter will. The main patent application is characterized in that the stream of majority charge carriers is more than ten times the saturation current of the collector, but small compared to that in the flow state is flowing current, and that the majority charge carrier current from the collector itself or from one immediately adjacent to the collector, at least approximately at collector potential lying non-blocking auxiliary electrode flows to the base electrode, so that between the emitter and the Collector one that accelerates the minority charge carriers in the direction from the emitter to the collector electrical tension field exists.

The object of the invention is now the transistor according to the main patent application for a to apply the electron or light beam arrangements described above, in the known manner shifting the operating point of a semiconductor element with a negative resistance characteristic the effect of a beam of electrons or light is brought about.

It has been found that the switching transistors with an extremely low switching capacity can be transferred from their high-resistance state to the low-resistance state. This is the relatively low energy z. B. carries an electron beam with it, able to control the switching transistors to control. The tip transistors previously used in this context have this advantage not.

The use of the switching transistor offers the following advantages: it can be operated in the monostable or in the bistable tilted position, but has the use of a transistor
with partially falling characteristics
for switching with short jump times

Addition to patent application D 21198 VIIIc / 21g
(Interpretation document 1 060 498)

Applicant:

German Federal Post Office,

represented by the President

the Central Telecommunications Office ,

Darmstadt, Rheinstr. 110

Dr. phil. Helmut Salow, Darmstadt,

and Dr. rer. nat. Waldemar von Münch., Frankfurt / M.,

have been named as inventors

compared to the tip transistor, increased mechanical and electrical stability, a more favorable ratio from blocking resistance to flow resistance as well as a much higher load capacity. The switching speed surpasses that of the tip transistor, it is also the switching speed of one Far superior to comparable flat transistors or a combination of flat transistors. Of the Production effort is relatively low if switching transistors are used with tips sunk into the collectors.

The drawing illustrates once again the inventive idea z. B. for an electron beam array. A beam generation system 1 supplies the electron beam, which can be deflected by a deflection device 2 has been made. The switching transistors 3, 4, 5 are opposed to the electron beam. The electron beam preferably hits a point on the semiconductor that is located in the collector 6 opposite the recessed tip. The emitter 7 is ring-shaped in order to accommodate the electron beam To give the opportunity to penetrate the semiconductor. It could also be made from a radiolucent material be executed and then make up the entire surface of the semiconductor facing the electron beam.

The switching transistor can be operated in the monostable or bistable tilt position. With help of a He is thereby of electron or light beam

909 610/261

Claims (3)

an operating point with low current is reversed to an operating point with high current. In addition to a signal input at the emitter or at the base, the reduction in resistance in front of the collector can advantageously be used for reversing, which consists in generating electron-hole pairs in the semiconductor by high-energy electrons or light quanta. In some cases it can make sense to convert the control current of the electrons into light quanta beforehand. In this case, a fluorescent layer will be applied in the immediate vicinity of the semiconductor surface - or on top of it. Patent claims: 1. Use of a transistor with partially falling characteristics for switching with short Jump times and extensive p-n transitions according to patent application D 21198 VIIIc / 21g for an arrangement in which in a known manner the shift in the operating point of a semiconductor element with a negative resistance characteristic caused by the action of a beam of electrons or light. 2. Use of switching transistors in an arrangement according to claim 1, characterized in that that switching transistors are used with tips sunk into the collectors. 3. Use of switching transistors in an arrangement according to claim 1 or 2, characterized in that that a fluorescent layer on or in the immediate vicinity of the switching transistor is attached. Considered publications:
U.S. Patent No. 2,589,704. 1 sheet of drawings © 909 610/261 8.59