CN201126829Y - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
- Publication number
- CN201126829Y CN201126829Y CNU2007201826599U CN200720182659U CN201126829Y CN 201126829 Y CN201126829 Y CN 201126829Y CN U2007201826599 U CNU2007201826599 U CN U2007201826599U CN 200720182659 U CN200720182659 U CN 200720182659U CN 201126829 Y CN201126829 Y CN 201126829Y
- Authority
- CN
- China
- Prior art keywords
- light
- substrate
- layer
- gallium nitride
- ohmic contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 53
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 230000005540 biological transmission Effects 0.000 claims description 24
- 230000000994 depressogenic effect Effects 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 230000000737 periodic effect Effects 0.000 claims description 12
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000005083 Zinc sulfide Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- YQNPZKUDUWSYQX-UHFFFAOYSA-N [O-2].[In+3].[Mo+4] Chemical compound [O-2].[In+3].[Mo+4] YQNPZKUDUWSYQX-UHFFFAOYSA-N 0.000 claims description 3
- LGOGWRFWPHMDLS-UHFFFAOYSA-N [S-2].S.[Zn+2].[SeH2] Chemical compound [S-2].S.[Zn+2].[SeH2] LGOGWRFWPHMDLS-UHFFFAOYSA-N 0.000 claims description 3
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 claims description 3
- UPGUYPUREGXCCQ-UHFFFAOYSA-N cerium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Ce+3] UPGUYPUREGXCCQ-UHFFFAOYSA-N 0.000 claims description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 3
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910005540 GaP Inorganic materials 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 abstract description 5
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 230000001737 promoting effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 71
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Abstract
The utility model relates to a LED, which is designed by combination of a reflection layer, a substrate, a N-type gallium nitride ohmic contact layer, a nitride indium-gallium luminescent layer, a p-type gallium nitride ohmic contact layer, a light-penetration electrical-conductive layer, a P-type metal electrode and a N-type metal electrode, so as to form a plurality of protruding parts periodically-arranged on the substrate, thereby increasing surface area of the substrate. Light-emitting probability after contact of light and the reflection layer is greatly improved via combination of the reflection layer and the substrate, thereby effectively promoting luminescent efficiency of the LED. The multiple cupped parts of the reflection layer firmly combine with multiple protruding parts of the substrate to increase firm combining force of the reflection layer and the substrate, thereby preventing the reflection layer from falling off the substrate, which is suitable for LED or similar structures.
Description
Technical field
The utility model relates to a kind of light-emitting diode, Combination Design by a reflector, a substrate, a n type gallium nitride ohmic contact layer, an InGaN luminescent layer, a P type gallium nitride ohmic contact layer, a light transmission conductive layer, a P type metal electrode and a N type metal electrode, long-pending with the contact surface that increases this substrate and this reflector, and then effectively reach the luminous efficiency that promotes light-emitting diode, and increase the firm adhesion of this reflector and this substrate, so that this reflector is unlikely by coming off on this substrate, and be applicable to light-emitting diode or similar structures.
Background technology
The prosperity of science and technology and make rapid progress, it is very extensive that light-emitting diode is applied to various compact consumption electronic products, and be the material main flow of technology more of making light-emitting diode with the gallium nitride compound.
Please refer to Fig. 1, be the structural representation of existing gallium nitride light-emitting diode.This gallium nitride light-emitting diode is a substrate 10 with sapphire, and this substrate 10 comprises: a first surface 101 and a second surface 102 that is positioned at these first surface 101 opposite sides are formed with a gallium nitride resilient coating 11, a n type gallium nitride ohmic contact layer 12, an InGaN luminescent layer 13, a P type aluminium gallium nitride alloy coating layer 14, a P type gallium nitride ohmic contact layer 15 and a light transmission conductive layer 16 in this second surface 102 of this substrate 10 crystalline substance from bottom to top of heap of stone respectively in regular turn.On this light transmission conductive layer 16 and this n type gallium nitride ohmic contact layer 12, form a positive electrode liner 17 and a negative electrode liner 18 more respectively, plate a metallic reflector 19 of one deck silver (Ag) or aluminium (Al) at last again in this first surface 101 of this substrate 10.
This this metallic reflector 19 can be with the source reflection launched towards this first surface 101 by this InGaN luminescent layer 13 to this second surface 102, yet the surface of this metallic reflector 19 that contacts with this first surface 101 is the plane, easily cause this metallic reflector 19 on this substrate 10, to come off, and this substrate 10 is limited with the surface area of 19 first surface in contact 101 of this metallic reflector, thereby can't effectively promote the luminous efficiency of gallium nitride light-emitting diode.
Summary of the invention
The shortcoming of prior art in view of the above, main purpose of the present utility model is to overcome the deficiencies in the prior art and defective, a kind of light-emitting diode is proposed, be formed with the concaveconvex structure of periodic arrangement in the surface, reflector, long-pending with the contact surface that increases this substrate and this reflector, and then effectively promote the luminous efficiency of light-emitting diode, to promote whole practicality.
Another purpose of the present utility model is, a kind of light-emitting diode is proposed, being formed with a plurality of depressed parts by a reflector is formed with a plurality of protuberances with a substrate and combines, to increase the adhesion of this reflector and this substrate, to avoid this reflector on this substrate, to come off, and reach the effect of firm combination, to promote whole practicality.
For reaching above-mentioned purpose, the utility model provides a kind of light-emitting diode, comprising: a reflector is formed with a plurality of depressed parts of periodic arrangement; One substrate is formed with a plurality of protuberances of periodic arrangement, and the corresponding a plurality of depressed parts that are incorporated into this reflector; One n type gallium nitride ohmic contact layer is formed at the top of this substrate; One InGaN luminescent layer is formed at the top of this n type gallium nitride ohmic contact layer; One P type gallium nitride ohmic contact layer is formed at the top of this InGaN luminescent layer; One light transmission conductive layer is formed at the top of this P type gallium nitride ohmic contact layer; One P type metal electrode is with this light transmission conductive layer electrical couplings; And a N type metal electrode, with this n type gallium nitride ohmic contact layer electrical couplings.
The utlity model has following useful technique effect:
1, the utility model is formed with the concaveconvex structure of periodic arrangement in the surface, reflector, and the contact surface that can increase this substrate and this reflector is long-pending, thereby effectively promotes the luminous efficiency of light-emitting diode, has promoted whole practicality.
2, the utility model is formed with a plurality of depressed parts by a reflector and is formed with a plurality of protuberances with a substrate and combines, increased the adhesion of this reflector and this substrate, avoid this reflector on this substrate, to come off, thereby reach the effect of firm combination, promoted whole practicality.
Other characteristics of the present utility model and specific embodiment can further be understood in the detailed description of following conjunction with figs..
Description of drawings
Fig. 1 is existing light-emitting diode structure schematic diagram;
Fig. 2 is a structural representation of the present utility model;
Fig. 3 is that of the present utility model another implemented illustration.
Symbol description among the figure
10 substrates
101 first surfaces
102 second surfaces
11 gallium nitride resilient coatings
12 n type gallium nitride ohmic contact layers
13 InGaN luminescent layers
14 P type aluminium gallium nitride alloy coating layers
15 P type gallium nitride ohmic contact layers
16 light transmission conductive layer
17 positive electrode liners
18 negative electrode liners
19 metallic reflectors
20 reflector
201 depressed parts
21 substrates
211 protuberances
22 n type gallium nitride ohmic contact layers
23 InGaN luminescent layers
24 P type gallium nitride ohmic contact layers
25 light transmission conductive layer
26 P type metal electrodes
27 N type metal electrodes
Embodiment
Following embodiment further describes viewpoint of the present utility model, but non-to limit category of the present utility model anyways.
Seeing also Fig. 2 is the utility model light-emitting diode structure schematic diagram.This light-emitting diode comprises: a reflector 20, a substrate 21, a n type gallium nitride ohmic contact layer 22, an InGaN luminescent layer 23, a P type gallium nitride ohmic contact layer 24, a light transmission conductive layer 25, a P type metal electrode 26 and a N type metal electrode 27.
This reflector 20 is formed with a plurality of depressed parts 201 of periodic arrangement, and wherein, a plurality of depressed parts 201 in this reflector 20 are in order to increasing the area in this reflector 20, and the thickness in this reflector 20 can between
Between, and this reflector 20 can be and is selected from the group that is made up of silver, aluminium, nickel, titanium, gold, platinum and alloy thereof.
This substrate 21 is formed with a plurality of these protuberances 211 of periodic arrangement, and the corresponding a plurality of depressed parts 201 that are incorporated into this reflector 20, can be in order to bonded area and the adhesion of increase with this reflector 20, this reflector 20 is unlikely by coming off on this substrate 21, and the thickness of this substrate 21 can be between 80～200 μ m, and this substrate 21 can be sapphire (sapphire), zinc selenide (ZnSe), zinc oxide, carborundum (SiC), glass, gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), zinc sulphide (ZnS), selenium zinc sulphide (ZnSSe) wherein any one.
This n type gallium nitride ohmic contact layer 22 is formed at the top of this substrate 21, and in addition, this n type gallium nitride ohmic contact layer 22 also can be aluminum indium nitride gallium layer or gallium indium nitride layer.
This InGaN luminescent layer 23 is formed at the top of this n type gallium nitride ohmic contact layer 22, and wherein, this InGaN luminescent layer 23 also can be an InGaN compound semiconductor layer.
This P type gallium nitride ohmic contact layer 24 be formed at the top of this InGaN luminescent layer 23, and this P type gallium nitride ohmic contact layer 24 also can be an aluminum indium nitride gallium layer or a gallium indium nitride layer.
This light transmission conductive layer 25, be formed at the top of this P type gallium nitride ohmic contact layer 24, and this light transmission conductive layer 25 can be a light transmitting conductive oxide layer, wherein the material of this light transmission conductive layer 25 can be indium oxide, tin oxide, indium oxide molybdenum, indium oxide cerium, zinc oxide, indium zinc oxide, magnesium oxide zinc, tin oxide cadmium, tin indium oxide wherein any one.
This P type metal electrode 26 is with these light transmission conductive layer 25 electrical couplings.
This N type metal electrode 27 is with these n type gallium nitride ohmic contact layer 22 electrical couplings.
Hold structure, light-emitting diode of the present utility model, its characteristics are by this reflector 20, this substrate 21, this n type gallium nitride ohmic contact layer 22, this InGaN luminescent layer 23, this P type gallium nitride ohmic contact layer 24, this light transmission conductive layer 25, the Combination Design of this P type metal electrode 26 and this N type metal electrode 27, wherein, the design that has a plurality of depressed parts 201 of periodic arrangement by the surface in this reflector 20, to increase the surface area in this reflector 20, and the source reflection that will be launched towards a plurality of depressed parts 201 in this reflector 20 by this InGaN luminescent layer 23 is to the direction of this n type gallium nitride ohmic contact layer 22, and then effectively reach the luminous efficiency that promotes light-emitting diode, simultaneously, a plurality of depressed parts 201 in this reflector 20 firmly combine with a plurality of protuberances 211 of this substrate 21, so that this reflector 20 is unlikely by coming off on this substrate 21, to increase its practicality and convenience.
See also Fig. 3, for of the present utility model another implemented illustration.This light-emitting diode comprises: a substrate 21, a n type gallium nitride ohmic contact layer 22, an InGaN luminescent layer 23, a P type gallium nitride ohmic contact layer 24, a light transmission conductive layer 25, a P type metal electrode 26 and a N type metal electrode 27.
This substrate 21 is formed with a plurality of protuberances 211 of periodic arrangement in the bottom surface of this substrate 21.
This n type gallium nitride ohmic contact layer 22 is formed at the top of this substrate 21.
This InGaN luminescent layer 23 is formed at the top of this n type gallium nitride ohmic contact layer 22.
This P type gallium nitride ohmic contact layer 24 is formed at the top of this InGaN luminescent layer 23.
This light transmission conductive layer 25 is formed at the top of this P type gallium nitride ohmic contact layer 24.
This P type metal electrode 26 and these light transmission conductive layer 25 electrical couplings.
This N type metal electrode 27 and these n type gallium nitride ohmic contact layer 22 electrical couplings.
On actual the use, removable this reflector 20 in this embodiment of Fig. 3 with a plurality of protuberances 211 of the periodic arrangement that exposes outside this substrate 21, and increases the surface area of this substrate 21, equally also can reach the luminous efficiency of effective lifting light-emitting diode, to increase its practicality and convenience.
Above-described specific embodiment, only release characteristics of the present utility model and effect in order to example, but not in order to limit the category of implementing of the present utility model, therefore do not breaking away under above-mentioned spirit of the utility model and the technology category, any utilization the utility model institute's disclosure and the equivalence finished changes and modify, the scope that all still should be claims contains.
Claims (10)
1. a light-emitting diode is characterized in that, comprising:
One reflector is formed with a plurality of depressed parts of periodic arrangement;
One substrate is formed with a plurality of protuberances of periodic arrangement, and the corresponding a plurality of depressed parts that are incorporated into this reflector;
One n type gallium nitride ohmic contact layer is formed at the top of this substrate;
One InGaN luminescent layer is formed at the top of this n type gallium nitride ohmic contact layer;
One P type gallium nitride ohmic contact layer is formed at the top of this InGaN luminescent layer;
One light transmission conductive layer is formed at the top of this P type gallium nitride ohmic contact layer;
One P type metal electrode is with this light transmission conductive layer electrical couplings; And
One N type metal electrode is with this n type gallium nitride ohmic contact layer electrical couplings.
2. light-emitting diode as claimed in claim 1 is characterized in that, this reflector is a metallic reflector.
3. light-emitting diode as claimed in claim 2 is characterized in that this metallic reflector is selected from the group that is made up of silver, aluminium, nickel, titanium, gold, platinum and alloy thereof.
4. light-emitting diode as claimed in claim 1 is characterized in that, this substrate be sapphire, zinc oxide, carborundum, glass, gallium phosphide, gallium arsenide phosphide, zinc selenide, zinc sulphide, selenium zinc sulphide wherein any one.
5. light-emitting diode as claimed in claim 1 is characterized in that, this light transmission conductive layer is a light transmitting conductive oxide layer.
6. light-emitting diode as claimed in claim 1 is characterized in that, this light transmission conductive layer be indium oxide, tin oxide, indium oxide molybdenum, indium oxide cerium, zinc oxide, indium zinc oxide, magnesium oxide zinc, tin oxide cadmium, tin indium oxide wherein any one.
7. a light-emitting diode is characterized in that, comprising:
One substrate, a plurality of protuberances that are formed with periodic arrangement are in the bottom surface of this substrate;
One n type gallium nitride ohmic contact layer is formed at the top of this substrate;
One InGaN luminescent layer is formed at the top of this n type gallium nitride ohmic contact layer;
One P type gallium nitride ohmic contact layer is formed at the top of this InGaN luminescent layer;
One light transmission conductive layer is formed at the top of this P type gallium nitride ohmic contact layer;
One P type metal electrode is with this light transmission conductive layer electrical couplings; And
One N type metal electrode is with this n type gallium nitride ohmic contact layer electrical couplings.
8. light-emitting diode as claimed in claim 7 is characterized in that, this substrate be sapphire, zinc oxide, carborundum, glass, gallium phosphide, gallium arsenide phosphide, zinc selenide, zinc sulphide, selenium zinc sulphide wherein any one.
9. light-emitting diode as claimed in claim 7 is characterized in that, this light transmission conductive layer is a light transmitting conductive oxide layer.
10. light-emitting diode as claimed in claim 7 is characterized in that, this light transmission conductive layer be indium oxide, tin oxide, indium oxide molybdenum, indium oxide cerium, zinc oxide, indium zinc oxide, magnesium oxide zinc, tin oxide cadmium, tin indium oxide wherein any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201826599U CN201126829Y (en) | 2007-10-24 | 2007-10-24 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007201826599U CN201126829Y (en) | 2007-10-24 | 2007-10-24 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201126829Y true CN201126829Y (en) | 2008-10-01 |
Family
ID=40000295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007201826599U Expired - Fee Related CN201126829Y (en) | 2007-10-24 | 2007-10-24 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201126829Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130255A (en) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Light-emitting diode (LED), light emitting device and LED manufacturing method |
| CN102484176A (en) * | 2009-09-30 | 2012-05-30 | 京瓷株式会社 | Light Emitting Element And Method For Manufacturing Light Emitting Element |
| CN102705743A (en) * | 2012-06-01 | 2012-10-03 | 明基电通有限公司 | light emitting device |
| CN106784220A (en) * | 2016-06-22 | 2017-05-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | Light emitting diode and preparation method thereof |
-
2007
- 2007-10-24 CN CNU2007201826599U patent/CN201126829Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102484176A (en) * | 2009-09-30 | 2012-05-30 | 京瓷株式会社 | Light Emitting Element And Method For Manufacturing Light Emitting Element |
| CN102484176B (en) * | 2009-09-30 | 2014-12-31 | 京瓷株式会社 | Light emitting element and method for manufacturing light emitting element |
| CN102130255A (en) * | 2010-09-28 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Light-emitting diode (LED), light emitting device and LED manufacturing method |
| CN102705743A (en) * | 2012-06-01 | 2012-10-03 | 明基电通有限公司 | light emitting device |
| CN102705743B (en) * | 2012-06-01 | 2014-08-06 | 明基电通有限公司 | light emitting device |
| CN106784220A (en) * | 2016-06-22 | 2017-05-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | Light emitting diode and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI244221B (en) | Micro-reflector containing flip-chip light emitting device | |
| CN201773864U (en) | Gallium nitride inverted light-emitting diode having high reflector | |
| US8564009B2 (en) | Vertical light emitting device | |
| US9153747B2 (en) | Light-emitting element | |
| TWM255518U (en) | Vertical electrode structure of Gallium Nitride based LED | |
| CN102881797B (en) | Gallium nitride based light emitting diode with current expanding structure | |
| US8035123B2 (en) | High light-extraction efficiency light-emitting diode structure | |
| US20070272930A1 (en) | Light-emitting diode package | |
| CN110265517B (en) | Light emitting element | |
| CN201126829Y (en) | Light emitting diode | |
| TWI555226B (en) | Light-emitting element with multilayer light-emitting laminate | |
| TWI575776B (en) | Light-emitting element with high efficiency reflective structure | |
| TWI754617B (en) | Light-emitting element | |
| US20160049555A1 (en) | Light emitting diode device | |
| CN101840974B (en) | Light Emitting Diode Structure for Improving Light Extraction Efficiency | |
| CN104576870B (en) | Light emitting element | |
| CN103606617B (en) | There is the inverted light-emitting diode (LED) of transparency electrode | |
| CN104538537A (en) | Light-emitting diode with conducted sidewall and back portion and manufacturing process of the same | |
| CN203071125U (en) | LED light-emitting device with reflecting mirror structure | |
| CN217114428U (en) | Flip LED chip and display panel | |
| CN202601714U (en) | Combined electrode suitable for high-power GaN-based LED chip | |
| US8247832B2 (en) | Light emitting diode and manufacturing method thereof | |
| CN102148309B (en) | LED chip with improved structure | |
| CN103943748A (en) | Light emitting element | |
| TWM331192U (en) | Led |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081001 Termination date: 20111024 |