CN1668149A - Organic electroluminescence display and its manufacturing method - Google Patents
Organic electroluminescence display and its manufacturing method Download PDFInfo
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- CN1668149A CN1668149A CN 200410008630 CN200410008630A CN1668149A CN 1668149 A CN1668149 A CN 1668149A CN 200410008630 CN200410008630 CN 200410008630 CN 200410008630 A CN200410008630 A CN 200410008630A CN 1668149 A CN1668149 A CN 1668149A
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- 238000005401 electroluminescence Methods 0.000 title claims description 9
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- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
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Abstract
The invention discloses an organic electroluminescent display and a manufacturing method thereof. The manufacturing method comprises the following steps: firstly, a transparent substrate is provided, and a driving array is manufactured on the transparent substrate, wherein the driving array comprises a shading layer, and a plurality of pixel areas are defined among the driving array by the shading layer. Then, a first electrode is formed over the pixel region. Then, an organic electroluminescent layer is formed on the first electrode, and a second electrode is formed on the organic electroluminescent layer.
Description
Technical field
The invention relates to a kind of organic electric-excitation luminescent (organic electroluminescence, OEL) structure of display pannel and preparation method thereof, and be particularly to structure of a kind of organic electro-luminescent display panel with light shield layer and preparation method thereof.
Background technology
The research of each bound pair organic EL component (organic electroluminescencedevice) in recent years, it is had is enough to replace LCD, and becomes time potentiality of generation display.Owing to itself be the active illuminating assembly, so organic electro-luminescent display seemingly do not need backlight module as the LCD, helps the lightweight of display.In addition, organic electro-luminescent display provides high contrast, fast response, and the visual angle broader than LCD.
The organic electric-excitation luminescent Display Technique is according to different two systems that can generally be divided into of organic film materials such as the employed carrier transfer layer of its assembly and luminescent layer, the one, be the micromolecule assembly (molecule-based device) of material with dyestuff or pigment, another then is the macromolecular component (polymer-based device) of material with the conjugacy macromolecule, the former generally makes assembly in vacuum evaporation plated film mode, and the latter then generally adopts solution rotating coating (spin coating) mode.Micromolecule OEL assembly is called as OLED, and macromolecule OEL assembly then is called as PLED.Because organic thin film layer is all the material of tool conduction carrier, therefore have the phenomenon of light leak at non-luminous region.
Fig. 1 is the fragmentary cross-sectional view of a known macromolecule organic electro-luminescent display (PLED) 1.As shown in Figure 1, this macromolecule organic electro-luminescent display 1 comprises a transparency carrier 0, a transparent indium tin oxide (Indium tin oxide, ITO) layer 2 as anode, one silica layer 4 in order to definition pixel region, an organic insulator 5, a polyethylene dioxythiophene (polyethylenedioxy thiophene, PEDOT) layer 6 usefulness, a high-molecular luminous material layer 8 as resilient coating, and a metal or alloy is as negative electrode 10 (as Ca, Al, Mg/Ag or Al/Li).
It is poor to bestow a suitable potential by antianode 2 and negative electrode 10, can make the high-molecular luminous material layer 8 of pixel region send the light 3 of particular color, and penetrate via anode 2 and transparency carrier 0.
The effect of resilient coating 6 is on the energy rank of regulating 8 on ito anode 2 and high-molecular luminous material layer, to promote electric hole injection efficiency and to reduce operating voltage.The resistance of general resilient coating 6 materials is not high, is a kind of conducting polymer as general PEDOT commonly used, the therefore direction of arrow in electric current is flowed through figure, and the high-molecular luminous material floor 8 that also can conducting should distinguish, and send the light 3 ' of particular color.Because silicon oxide layer 4 light-permeables, so the light 3 ' of particular color just penetrates by silicon oxide layer 4 and transparency carrier 0, forms light leakage phenomena, makes that the zone of sending light at last is bigger than original pixel region, thereby causes the shortcoming in the demonstration.
Summary of the invention
In view of this, the object of the present invention is to provide organic electro-luminescent display and preparation method thereof, improving the light leakage phenomena of non-pixel region, and then promote the performance of display.
Another object of the present invention provides one can improve organic electro-luminescent display of non-pixel region light leakage phenomena and preparation method thereof under the prerequisite that does not increase processing procedure degree of difficulty and light shield number.
For reaching above-mentioned purpose, the present invention is provided with a light shield layer in the pixel region periphery of organic electro-luminescent display, defining above-mentioned pixel region, and can cover the light that may send in the non-pixel region simultaneously.
The invention provides a kind of manufacture method of organic electro-luminescent display, its step comprises: a substrate at first is provided, and on substrate, makes a driving array, and, form a light shield layer on substrate, and between the driving array, define a plurality of pixel regions.Form one first electrode in the pixel region top afterwards, then on first electrode, form an organic electric-excitation luminescent layer, and form one second electrode on the organic electric-excitation luminescent layer.
The present invention still provides a kind of organic electro-luminescent display, and it comprises at least: a substrate; One drives array is formed on this substrate, and light shield layer is formed on this substrate one by one, and defines a plurality of pixel regions between the driving array; One first electrode is formed at the pixel region top; One organic electric-excitation luminescent layer is formed on first electrode; And one second electrode be formed on the organic electric-excitation luminescent layer.
According to the present invention, above-mentioned light shield layer can be made of any lighttight metal, insulator or organic material.According to the present invention, above-mentioned organic electric-excitation luminescent layer can be OLED or macromolecule (polymer) Organic Light Emitting Diode (PLED), wherein more can comprise an electron injecting layer, an electron transfer layer, a luminescent layer, an electric hole transport layer and an electric hole implanted layer.Above-mentioned first electrode can be an indium tin oxide layer (ITO); The composition material of above-mentioned second electrode can be Ca, Al, Mg, Mg/Ag alloy, Al/Li alloy or its combination.Above-mentioned transparency carrier can be glass substrate or plastic base.
According to the present invention, above-mentioned driving array is to comprise an amorphous silicon (a-Si) thin-film transistor or low temperature polycrystalline silicon (LTPS) thin-film transistor.And transistor comprises a grid, source electrode and drain, and above-mentioned light shield layer is when making grid, and is made with the material identical with grid; Or when making source electrode and drain, made with the material identical with source electrode and drain.
According to the present invention, above-mentioned first electrode, organic electric-excitation luminescent layer and second electrode are to constitute a full-color organic electroluminescence display module.And the manufacture method of organic electro-luminescent display of the present invention, be provided with one second substrate preferable further comprising on this second electrode.
Description of drawings
Fig. 1 is the fragmentary cross-sectional view of a known macromolecule organic electro-luminescent display.
Fig. 2 A～Fig. 2 E is the making flow process in order to explanation macromolecule organic electro-luminescent display of the present invention.
Symbol description:
0～transparency carrier;
1～macromolecule organic electro-luminescent display;
2～anode;
3,3 '～light;
4～silicon oxide layer;
5～organic insulator;
6～PEDOT layer;
8～high-molecular luminous material layer;
10～negative electrode;
200,200 '～substrate;
202,206～resilient coating;
204～gate insulator;
206,208～dielectric layer;
207～metal light shield layer;
212～the first electrodes;
214～the first insulating barriers;
215～the second insulating barriers;
217～organic electric-excitation luminescent layer;
220～polycrystalline SiTFT;
221～drain;
222～organic electric-excitation luminescent layer fate;
240～the second electrodes;
250～grid;
251～source electrode;
255～passage;
256～source/drain;
257,258～contact hole;
300,300 '～light;
701～electron injecting layer;
702～electron transfer layer;
703～luminescent layer;
704～electric hole transport layer;
705～electric hole implanted layer.
Embodiment
In order to allow above-mentioned purpose of the present invention, feature and advantage become apparent, cited below particularlyly go out preferred embodiment, and cooperate appended diagram, be described in detail below:
Below with reference to Fig. 2 A-Fig. 2 E, present embodiment organic electro-luminescent display and preparation method thereof is described.
Driving multiple substrate among the present invention for example is the substrate (for example, glass substrate) that comprises amorphous silicon film transistor array (a-Si TFTsarray), or comprises the substrate of low-temperature polysilicon film transistor (LTPS-TFT) array.The driving component substrate that present embodiment is constituted with the low-temperature polysilicon film transistor array is an example, and be that example illustrates that it makes flow process with the pattern of top grid (top gate), yet the present invention also can be applicable to the active multiple substrate of bottom-gate (bottom gate).
At first, please refer to Fig. 2 A, a transparency carrier 200 is provided, on this transparency carrier 200, form a resilient coating (buffer layer) 202, and on resilient coating 202, form a plurality of low-temperature polysilicon film transistors 220.Wherein low-temperature polysilicon film transistor 220 comprises: a grid 250, one source pole 251, a drain 221, a gate insulator 204, a passage 255 and one source pole/drain area (S/D) 256, and drain 221 and couple with source/drain 256 via the contact hole 257 of a dielectric layer 206.The manufacturing process of low-temperature polysilicon film transistor 220 is as follows: at first form a plurality of multi-crystal silicon areas that are made of source/drain (S/D) 256, passage 255 on resilient coating 202.Afterwards, above these multi-crystal silicon areas, cover a gate insulator 204.Then, form grid 250 in gate insulator 204 tops.Secondly, form a dielectric layer 206 again in substrate 200 tops, this dielectric layer 206 in source/drain (S/D) 256 tops respectively etching the contact hole is arranged.Then, form one source pole/drain metal level (not shown) again in substrate 200 tops, and behind lithography, form source electrode 251, drain 221.
In addition, when forming source electrode 251, drain 221, the periphery in pixel region fate, dielectric layer 206 top forms a metal light shield layer 207.
Acting on of this metal light shield layer 207 defines pixel region (organic electric-excitation luminescent layer fate 222), and covers the light that may see through transparency carrier 200 in the non-pixel region and send simultaneously.In this preferred embodiment, light shield layer 207 is that etching is finished when utilizing the deposition etch mode to form source electrode 251, drain 221, yet according to spirit of the present invention, this light shield layer 207 also can be finished in deposition etch grid 250 in etching, shown in Fig. 2 E.So can or else need increase under the prerequisite of fabrication steps and cost, implement the present invention easily.In addition, according to the present invention, the material of light shield layer 207 is not limited to metal, and any to have the material that hides optical activity all applicable, as insulator, material such as organic.Above-mentioned transparency carrier 200 can be the plastic material of glass or printing opacity.If plastic base, its material can be polyethylene terephthaldehyde ester (polyethyleneterephthalate), polyester (polyester), Merlon (polycarbonates), polyacrylate (polyacrylates) or polystyrene (polystyrene); And polycrystalline SiTFT is the control unit as organic electro-luminescent display, can be with the low temperature manufacturing technology person of finishing.
Then, please refer to Fig. 2 B, form a dielectric layer 208 on substrate, it has a contact hole 258 above corresponding drain 221.Then form one first electrode 212 on dielectric layer 208, it covers above-mentioned metal light shield layer 207 defined pixel regions, and is coupled to drain 221.Wherein first electrode 212 can be indium tin oxide (ITO), indium-zinc oxide (IZO), Zinc-aluminium (AZO) or zinc oxide (ZnO).And this first electrode 212 can be formed by sputtering method, electron beam evaporation plating method, hot vapour deposition method, chemical gaseous phase coating method and spray pyrolysis method.
Then, form one first insulating barrier (insulator layer), 214 and second insulating barrier 215 respectively on this first electrode 212, the material of first insulating barrier 214 is as being silica; The material of second insulating barrier 215 is as being Polyimide (polyimide).Afterwards with first electrode 212 as etching stopping layer, this insulating barrier 214,215 is carried out etching, to expose the organic electric-excitation luminescent layer fate 222 on this first electrode 212.
Afterwards, form an organic electric-excitation luminescent layer 217 on first electrode 212.This organic electric-excitation luminescent layer 217 is a macromolecule Organic Light Emitting Diode material, and it can utilize modes such as rotary coating, ink-jet or screen painting to form.In the present embodiment, this organic electric-excitation luminescent layer 217 more comprises: an electron injecting layer 701 (EIL; Electron injection layer), an electron transfer layer 702 (ETL; Electrontransport layer), a luminescent layer 703 (EL; Emitting layer), electric hole transport layer 704 (HTL; Hole transport layer) and electric hole implanted layer 705 (HIL; Holeinjection layer).Wherein organic electric-excitation luminescent layer 217 also can be micromolecule Organic Light Emitting Diode (OLED) material, and it can utilize the vacuum coating mode to form.
Then, shown in Fig. 2 D, form a second electrode lay 240 on organic electric-excitation luminescent layer 217, wherein the second electrode lay 240 is the negative electrodes as this Organic Light Emitting Diode.The mode that forms the second electrode lay 240 can be vacuum thermal evaporation or sputtering way.For cooperating demand as the cathode electrode of Organic Light Emitting Diode, should select for use and be fit to the electronics person that injects the organic semiconducting materials, as low-work-function materials such as Ca, Al, Mg, Mg/Ag alloy, Al/Li alloys, the preferably is Mg or Mg-Ag alloy, or is the laminated of Mg or Mg-Ag alloy and tin indium oxide (ITO).
At last, a substrate 200 ' is set on cathode electrode 240, so far finishes the making of present embodiment organic electro-luminescent display.
The structure of present embodiment organic electro-luminescent display shown in Fig. 2 D, comprises one first substrate 200; The one driving array that is made of thin-film transistor 220, and this drives array and comprise a light shield layer 207 defines a plurality of pixel regions 222 by light shield layer 207 driving between array; One first electrode 212 is formed at pixel region 222 tops; One organic electric-excitation luminescent layer 217 is formed on first electrode 212 (anode); One second electrode 240 is formed on the organic electric-excitation luminescent layer 217; And one second substrate 200 ' be arranged on second electrode 240 (negative electrode).Wherein organic luminous layer can be OLED or PLED, and above-mentioned first electrode 212, organic electric-excitation luminescent layer 217 and second electrode 240 are to constitute a full-color organic electroluminescence display module.
As above-mentioned, organic electro-luminescent display of the present invention and preparation method thereof, by a light shield layer 207 is set, not only define pixel region 222 positions, the light 300 that organic electric-excitation luminescent layer 217 is sent emits after by first electrode 212 below it and first substrate 200; At the same time, and cover the light 300 ' that produces owing to leakage current in the non-pixel region, therefore avoid sending out the light leakage phenomena of pixel region, reach the effect that promotes display performance.
In addition, light shield layer 207 can be made when making grid 250, source electrode 251 or drain 221, therefore need not increase the step and the cost of processing procedure, can reach purpose of the present invention easily.
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410008630 CN1668149A (en) | 2004-03-12 | 2004-03-12 | Organic electroluminescence display and its manufacturing method |
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|---|---|---|---|
| CN 200410008630 CN1668149A (en) | 2004-03-12 | 2004-03-12 | Organic electroluminescence display and its manufacturing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7667390B2 (en) | 2005-12-09 | 2010-02-23 | Au Optronics Corp. | Bottom-emission organic electroluminescent display of high resolution and power saving |
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2004
- 2004-03-12 CN CN 200410008630 patent/CN1668149A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7667390B2 (en) | 2005-12-09 | 2010-02-23 | Au Optronics Corp. | Bottom-emission organic electroluminescent display of high resolution and power saving |
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