CN115323345A - Carrier plate and method for prolonging service life of carrier plate - Google Patents
Carrier plate and method for prolonging service life of carrier plate Download PDFInfo
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- CN115323345A CN115323345A CN202210968757.4A CN202210968757A CN115323345A CN 115323345 A CN115323345 A CN 115323345A CN 202210968757 A CN202210968757 A CN 202210968757A CN 115323345 A CN115323345 A CN 115323345A
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- 238000000034 method Methods 0.000 title claims abstract description 67
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 65
- 239000010410 layer Substances 0.000 claims abstract description 50
- 239000011241 protective layer Substances 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 230000008021 deposition Effects 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 25
- 238000005240 physical vapour deposition Methods 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 18
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 15
- 238000007747 plating Methods 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000013077 target material Substances 0.000 claims description 9
- 238000005086 pumping Methods 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 26
- 238000000576 coating method Methods 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- -1 argon ions Chemical class 0.000 description 2
- 125000004122 cyclic group Chemical group 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 239000004411 aluminium Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
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- 238000005057 refrigeration Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
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- 239000000758 substrate Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
Abstract
The invention relates to a carrier plate and a method for prolonging the service life of the carrier plate. The method for prolonging the service life of the carrier plate comprises the following steps: obtaining a carrier plate which is used for a preset number of times on a production line; heating the carrier plate to release the water vapor adsorbed by the carrier plate; and arranging a waterproof protective layer on the surface of the heated carrier plate. The carrier plate and the method for prolonging the service life of the carrier plate reduce the carrier plate water vapor, inhibit the release and absorption of the carrier plate water vapor, recycle the carrier plate which needs to be replaced due to the deposition of the over-thick ITO film layer, and prolong the service life of the carrier plate.
Description
Technical Field
The invention relates to the technical field of photovoltaic cell production equipment, in particular to a carrier plate and a method for prolonging the service life of the carrier plate.
Background
With the continuous upgrade of photovoltaic products, the market share of high-efficiency heterojunction cells is continuously increasing due to the advantages of high efficiency and low cost. The process flow of the heterojunction cell comprises four steps of texturing cleaning, amorphous silicon coating, TCO coating and screen printing, wherein the TCO coating is an essential step for preparing a conductive ITO (indium tin oxide) film layer of the heterojunction cell, and the efficiency of the heterojunction cell is seriously influenced by the quality of the ITO film layer.
A common process for TCO coating is plate PVD (Physical Vapor Deposition), in which a silicon wafer is placed on a support plate and then enters a chamber for coating. ITO molecules are continuously accumulated on the carrier plate in the film coating process, and an ITO film layer is formed on the surface of the carrier plate after the carrier plate is recycled for a long time. ITO is an N-type highly conductive material, and exhibits strong polarity similar to water molecules. Therefore, the carrier plate can easily absorb the water vapor in the air in the recycling process. The old carrier plate that adsorbs a large amount of steam can constantly release steam after getting into PVD equipment, leads to PVD equipment evacuation speed to become slow, has increased the CT (Cycle Time) Time of equipment, seriously influences the board productivity. And because the equipment evacuation speed slows down, can't keep up with the mainframe platform transmission speed, lead to the support plate can't be continuous, and the discontinuity of support plate can lead to the ITO molecule to sputter everywhere to the cavity for the cavity needs regularly to clear up, and causes the waste of ITO, greatly increased the cost of heterojunction battery. Meanwhile, after a large amount of water vapor carried by the carrier plate enters the process chamber, the water vapor is ionized and decomposed and participates in the deposition process of indium in the target material, so that the performance of the battery is greatly reduced.
Aiming at a series of problems caused by water vapor of the carrier plate, the main method in the industry at present is to shorten the replacement period of the carrier plate, namely to shorten the service life of the carrier plate, which leads to the increase of the cost. Or the ITO film layer on the carrier plate is removed by cleaning with corrosive chemical liquid, but the cleaning process is complicated, and the carrier plate is corroded by the corrosive chemical liquid, so that the service life of the carrier plate is shortened.
Disclosure of Invention
Accordingly, there is a need to provide a carrier and a method for extending the service life of a carrier.
In one aspect, the present application provides a method for prolonging a service life of a carrier plate, including the following steps:
obtaining a carrier plate which is used for a preset number of times on a production line;
heating the carrier plate to release water vapor adsorbed by the carrier plate;
and arranging a waterproof protective layer on the surface of the heated carrier plate.
The technical solution of the present application is further described below:
in one embodiment, the step of performing a heating process on the carrier plate comprises:
placing the carrier plate into a first environment;
and heating the first environment to 180-240 ℃, and setting the heating time to be 5-10 min.
In one embodiment, the step of performing heat treatment on the carrier plate further includes:
removing moisture released by the carrier plate into the first environment.
In one embodiment, the step of removing moisture released from the carrier plate into the first environment comprises:
pumping out water vapor in the first environment through a molecular pump; and/or the presence of a gas in the gas,
condensing water vapor in the first environment through a cold trap.
In one embodiment, the step of providing a water-blocking protective layer on the surface of the heated carrier plate includes:
and plating an aluminum oxide material on the surface of the carrier plate to enable the aluminum oxide material to form the waterproof protective layer.
In one embodiment, the step of plating an aluminum oxide material on the surface of the carrier plate to form the aluminum oxide material into the water-proof protection layer includes:
placing the heated carrier plate into a second environment;
introducing argon and oxygen into the second environment;
and plating an aluminum target material on the surface of the carrier plate by adopting a physical vapor deposition method so as to form the water-proof protective layer made of an aluminum oxide material on the surface of the carrier plate.
In one embodiment, the power density of the physical vapor deposition method is 100W/cm-300W/cm; the deposition rate is 2 nm/s-6 nm/s; the deposition pressure is 0.3 pa-1.2 pa; the deposition temperature is 50-150 ℃.
In one embodiment, the flow rate of the argon introduced into the second environment is 500sccm to 1000sccm; and introducing the oxygen into the second environment at a flow rate of 50-1000 sccm.
In one embodiment, the predetermined number of times is greater than or equal to 1000 times.
On the other hand, this application still provides a support plate, the support plate includes the body, covers in this external electrically conductive rete and cover in the water proof protective layer outside the electrically conductive rete.
According to the carrier plate and the method for prolonging the service life of the carrier plate, the carrier plate which is used on a production line for a certain number of times is heated, so that water vapor adsorbed by an ITO film layer of the carrier plate is released, and the water content of the carrier plate is reduced. And a waterproof protective layer is arranged on the surface of the carrier plate after the water vapor is removed, the ITO film layer of the carrier plate can be isolated from the water vapor in the air by the waterproof protective layer, and the water vapor in the air is inhibited from being adsorbed by the ITO film layer, so that the water vapor in the air is prevented from being absorbed by the carrier plate in the subsequent cyclic use of the carrier plate, the water vapor of the carrier plate is effectively reduced, the carrier plate which needs to be replaced due to the deposition of the too thick ITO film layer can be recycled, and the service life of the carrier plate is prolonged.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification.
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flowchart illustrating a method for extending a lifetime of a carrier according to an embodiment;
fig. 2 is a schematic structural diagram of a carrier according to an embodiment.
10. A body; 20. a conductive film layer; 30. a water-proof protective layer.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will recognize without departing from the spirit and scope of the present invention.
On the one hand, an embodiment of the application provides a method for prolonging the service life of a carrier plate, which is used for solving the problem that the carrier plate is easy to adsorb water vapor in air due to an excessively thick ITO layer deposited on the surface of the carrier plate in long-time cyclic use in a PVD coating process. Specifically, referring to fig. 1, a method for extending a service life of a carrier board according to an embodiment includes the following steps:
s110, obtaining a carrier plate which is used for a preset number of times on a production line;
s120, heating the carrier plate to release water vapor adsorbed by the carrier plate;
and S130, arranging a waterproof protective layer on the surface of the heated carrier plate.
Specifically, a layer of ITO film layer is formed on the surface of the carrier plate which has been used for a certain number of times on the PVD production line, and the ITO film layer easily absorbs water vapor in the air, so that when the carrier plate is conveyed into the process chamber of the coating equipment again in the circulating use, more water vapor is brought in, and the efficiency in the coating process and the performance of the film layer of the battery piece are affected. This application heats through the support plate to using certain number of times on producing the line, makes the adsorbed steam of ITO rete of support plate obtain the release, reduces the water content of support plate. And a waterproof protective layer is arranged on the surface of the carrier plate after the water vapor is removed, the waterproof protective layer can isolate the ITO film layer of the carrier plate from the water vapor in the air, and the ITO film layer is inhibited from releasing or adsorbing the water vapor, so that the carrier plate is prevented from absorbing the water vapor in the air again in the subsequent cycle use of the carrier plate, the water vapor of the carrier plate is effectively reduced, the carrier plate which needs to be replaced due to the deposition of the too thick ITO film layer can be recycled, and the service life of the carrier plate is prolonged.
Alternatively, in the step of S110, the carrier that has been used a preset number of times may be set as the carrier that has been used more than or equal to 1000 times. Specifically, the more the carrier plate is used, the thicker the ITO film layer deposited on the surface of the carrier plate is, and the thicker the ITO film layer is, the stronger the water absorption capacity is. The ITO film layer deposited on the surface of the carrier plate which is used for more than or equal to 1000 times is about 100um, and the water absorption capacity of the ITO film layer begins to influence the efficiency in the film coating process of the battery piece and the performance of the film layer of the battery piece, and needs to be treated. The preset times are set to be more than or equal to 1000 times, so that the cost control is more reasonable.
Further, the step of performing heat treatment on the carrier plate includes:
s111, placing the carrier plate into a first environment;
alternatively, the first environment may be a closed chamber, such as a heating chamber or other process chamber. Understandably, in other embodiments, the first environment may also be an open environment.
And S112, heating the first environment to 180-240 ℃, and setting the heating time to be 5-10 min.
Alternatively, the first environment may be heated by heating wire radiation or laser heating. Setting the heating temperature to be 180-240 ℃ and the heating time to be 5-10 min, so that the water vapor adsorbed by the ITO film layer of the carrier plate can be fully released, the water content of the carrier plate is greatly reduced, and the carrier plate enters the next step of the process for arranging the waterproof protective layer with smaller water vapor content;
further, the step of performing heat treatment on the carrier plate further includes:
and S113, removing water vapor released to the first environment by the carrier plate.
Specifically, the water vapor released to the first environment by the carrier plate is continuously removed in the heating process of the carrier plate, so that the water vapor in the first environment is reduced, the water vapor releasing efficiency of the carrier plate is improved, and the water vapor releasing of the carrier plate is further promoted.
Preferably, the step of removing moisture released from the carrier into the first environment comprises:
s1131: and pumping out the water vapor in the first environment through a molecular pump.
Specifically, the molecular pump is a vacuum pump, and transfers momentum to gas molecules in a first environment by using a rotor rotating at a high speed to obtain a directional speed, so that the gas molecules are compressed and driven to an exhaust port and then pumped away by a preceding stage, and the purpose of removing water vapor in the first environment is achieved.
Further, the step of removing moisture released by the carrier plate into the first environment further comprises:
s1132: condensing water vapor in the first environment through a cold trap.
Specifically, the cold trap can be a refrigeration coil pipe which can reach below-120 ℃, the cold trap is placed in the first environment or at a pump port of the molecular pump, water vapor in the first environment can be rapidly collected through the molecular pump, the water vapor can be directly condensed at the cold trap part through the low-temperature condensation effect on the surface of the cold trap, and the effect of removing the water vapor in the first environment is improved.
Specifically, the step of arranging a water-proof protective layer on the surface of the carrier plate after heating comprises:
and S131, plating an aluminum oxide material on the surface of the carrier plate to enable the aluminum oxide material to form the waterproof protective layer.
Specifically, the alumina material is fine and close, and the stable performance forms the steam in ITO rete and the air that the water proof protective layer can effectively isolated the support plate through aluminium oxide material, has restrained ITO rete absorption steam to aluminium oxide material itself can not reflect with the steam in the air, has protected the support plate effectively to extension support plate life. It is noted that in other embodiments, the water-blocking protective layer may also be a hydrophobic coating or other dense coating.
Preferably, plating an aluminum oxide material on the surface of the carrier plate, so that the aluminum oxide material forms the water-proof protection layer, includes:
s1311, placing the heated carrier plate into a second environment;
specifically, the second environment may be a sealed chamber, such as a vacuum chamber or other process chamber.
S1312, introducing argon and oxygen into the second environment;
specifically, argon gas is used as process gas and can be ionized to generate argon ions, and the argon ions can bombard the surface of the aluminum target material with high energy so that the aluminum target material can sputter aluminum particles. The oxygen is used for reacting with aluminum particles sputtered from the aluminum target material so as to form the water-proof protective layer made of the aluminum oxide material on the surface of the carrier plate. Furthermore, the flow rate of the argon introduced into the second environment is 500sccm to 1000sccm. And introducing the oxygen into the second environment at a flow rate of 50-1000 sccm.
S1313, plating an aluminum target on the surface of the carrier plate by using a physical vapor deposition method to form the water-proof protection layer made of an aluminum oxide material on the surface of the carrier plate.
Specifically, the Physical Vapor Deposition (PVD) is a method of vaporizing a coating material by a Physical method (such as evaporation, sputtering, etc.) to deposit a film on a substrate surface. The deposition types include vacuum evaporation, sputtering plating, ion plating and the like. In this example, magnetron sputtering in physical vapor deposition was employed. The physical vapor deposition method for plating the water-proof protective film layer has the advantages of no pollution, good film plating quality and the like, and can directly use the original PVD film plating equipment for silicon wafer film plating, only the target material needs to be replaced by the aluminum target material, other additional equipment does not need to be added, and the cost is saved.
Utilize the physical vapor deposition method, use the aluminium target, and can cover the film of the fine and close aluminium oxide material of one deck under the oxygen-containing atmosphere, water proof protective layer promptly, the water proof protective layer of fine and close aluminium oxide material does not react with water, also can not adsorb the steam in the air, make support plate steam greatly reduced, and because the cover of the water proof protective layer of aluminium oxide material, make ITO rete on the support plate can't contact with the steam in the air, can't adsorb and release it, effectively reduced support plate steam, make support plate life promote.
Optionally, in this embodiment, the power density of the pvd method is 100W/cm to 300W/cm; the deposition rate is 2 nm/s-6 nm/s; the deposition pressure is 0.3 pa-1.2 pa; the deposition temperature is 50-150 ℃. The film coating efficiency is adjusted by setting different power density, deposition rate, deposition pressure, gas flow and the like.
On the other hand, the application also provides a carrier plate treated by the method for prolonging the service life of the carrier plate. Specifically, referring to fig. 2, the carrier of an embodiment includes a body 10, a conductive film 20 covering the body 10, and a water-blocking protective layer 30 covering the conductive film 20. The body 10 may be a stainless steel plate, and the conductive film layer 20 is an ITO film layer formed on the surface of the carrier body 10 after the body 10 is used many times in the PVD coating process. Water proof protective layer 30 is the aluminium oxide rete, water proof protective layer 30 through the fine and close aluminium oxide material of one deck of ITO rete outer cover at old support plate, water proof protective layer 30 does not react with water, also can not adsorb the steam in the air, make support plate steam greatly reduced, and because the cover of the water proof protective layer of aluminium oxide material, make ITO rete on the support plate can't contact with the steam in the air, can't adsorb and release it, support plate steam has effectively been reduced, make support plate life promote.
The influence of the carrier plate treated by the above method on the performance of the prepared battery piece is further illustrated by experimental comparison.
Experimental example 1: the support plate treated by the method for prolonging the service life of the support plate is used for preparing a battery piece, and the battery piece is named as SY1. Experimental example 1 includes the following steps:
s210: taking a carrier plate which is used for more than 1000 times on a PVD coating production line, and respectively depositing ITO film layers with the thickness of about 100um on the front and back surfaces of the carrier plate;
s220: in a first environment, heating the carrier plate, wherein the heating temperature is set to be 200 ℃ and the heating time is set to be 5min;
s230: in a second environment, a water-proof protective layer made of an alumina material is plated on the heated carrier plate, the film thickness is 1um, the used target material is an Al target, the power density is 200W/cm, the deposition rate is 4nm/s, the deposition pressure is 1.0pa, the deposition temperature is 120 ℃, and the used process gas is argon and oxygen, wherein the gas flow of the argon is 800sccm, and the gas flow of the oxygen is 80sccm.
S240: selecting an N-type monocrystalline silicon wafer with the thickness of 150um to carry out texturing cleaning to prepare a textured surface;
s250: preparing an intrinsic amorphous silicon layer and a doped amorphous silicon layer on the front side and the back side of the silicon wafer after texturing by a PECVD (plasma enhanced chemical vapor deposition) method;
s260: preparing an ITO layer with the thickness of 110nm on a doped amorphous silicon layer of a silicon wafer by using the processed carrier plate through a PVD magnetron sputtering method, and monitoring a machine feeding C1 cavity CT, whether the carrier plate is continuous and a carrier plate water vapor value (monitored through MKS-RGA) in the process;
s270: preparing an Ag electrode on the ITO layer by a screen printing method and completing solidification;
s280: a test of the electrical performance of the cells was conducted.
Comparative example 2: a cell was prepared with a new carrier plate (used less than 100 times) and named BL1. Comparative example 1 comprises the following steps:
s310: selecting an N-type monocrystalline silicon wafer with the thickness of 150um to carry out texturing cleaning to prepare a textured surface;
s320: preparing an intrinsic amorphous silicon layer and a doped amorphous silicon layer on the front side and the back side of the silicon wafer after texturing by a PECVD (plasma enhanced chemical vapor deposition) method;
s330: preparing an ITO layer with the thickness of 110nm on a doped amorphous silicon layer of a silicon wafer by using a new carrier plate (the using times is less than 100) by a PVD magnetron sputtering method, and monitoring a machine feeding C1 cavity CT, whether the carrier plate is continuous or not and a carrier plate water vapor value (monitored by MKS-RGA) in the process;
s340: preparing an Ag electrode on the ITO layer by a screen printing method and completing solidification;
s350: a test of the electrical performance of the cells was conducted.
Comparative example 2: a battery piece is prepared by an old carrier plate (the using times are more than 1000 times), and the battery piece is named as BL2. Comparative example 2 comprises the following steps:
s410: selecting an N-type monocrystalline silicon wafer with the thickness of 150 mu m to carry out texturing and cleaning to prepare a textured surface;
s420: preparing an intrinsic amorphous silicon layer and a doped amorphous silicon layer on the front side and the back side of the silicon wafer after texturing by a PECVD method;
s430: preparing an ITO layer with the thickness of 110nm on a doped amorphous silicon layer of a silicon wafer by using an old carrier plate (the using times is more than 1000) through a PVD magnetron sputtering method, and monitoring a machine feeding C1 cavity CT, whether the carrier plate is continuous or not and a carrier plate water vapor value (monitored by MKS-RGA) in the process;
s440: preparing an Ag electrode on the ITO layer by a screen printing method and completing solidification;
s450: a test of the electrical performance of the cells was conducted.
Table 1 comparative table of batteries prepared from support plates before and after treatment by the method of the present application
Wherein, CT is the single cycle time of the feeding C1 cavity; eff is the conversion efficiency; isr is short-circuit current; voc is the open circuit voltage; FF is a fill factor; rs is a series resistor; rsh is a parallel resistor.
1. Comparing the data of the preparation process under different experimental conditions, it can be seen from table 1:
1) From the Time of CT (Cycle Time of one Cycle) of a C1 cavity, when an old carrier plate is used, the CT Time of the C1 cavity is prolonged by 7s compared with that of a new carrier plate, and compared with the CT Time of the C1 cavity, the old carrier plate and the new carrier plate processed by the method have no difference, and the condition of prolonging does not occur, which shows that the method can effectively reduce the release of water vapor of the old carrier plate, thereby reducing the CT Time of a machine table and improving the productivity.
2) Whether the carrier plate is continuous from the host computer platform, when using the new carrier plate, the carrier plate can maintain continuous state, and when using the old carrier plate, can't closely link to each other between the carrier plate, again with the old carrier plate through the method of this application after handling, can be unanimous with the new carrier plate, can keep the carrier plate continuous, it has also been said that this application scheme can reduce the release of carrier plate steam, make the C1 chamber reach the ready time shorten, the condition of beat fault can not appear, make the carrier plate continuous, thereby improve the actual utilization of target.
3) From the carrier plate steam value of RGA control, there is not obvious difference basically in old carrier plate after processing through this application and new carrier plate steam value, reduces 5.24E-6mbar than old carrier plate steam, shows that this application scheme covers the ITO rete on carrier plate surface through water proof protective layer for the release and the absorption of carrier plate steam are suppressed.
2. Comparing the electrical performance data of the cells prepared under different experimental conditions, it can be seen from table 1 that:
1) From the electrical property data, when the old carrier plate processed by the method is produced, the efficiency is improved by 0.85 percent compared with the original old carrier plate, and the old carrier plate can be restored to the same level as the new carrier plate. Mainly, the fill factor FF is reduced more, the FF is reduced by 0.62% by coating the film on the old carrier plate, and the FF is not obviously reduced after the old carrier plate is treated by the method, which shows that after the carrier plate is formed with the waterproof protective layer, the release and absorption of water vapor are inhibited, and the influence of the water vapor on the crystallinity and the conductivity of the ITO film layer is reduced.
In conclusion, when the method is used for producing the old carrier plate processed by the method, a series of problems of efficiency reduction, CT time prolonging, carrier plate discontinuity and the like caused by the original old carrier plate can be avoided.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent should be subject to the appended claims.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless explicitly specified otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature "under," "beneath," and "under" a second feature may be directly under or obliquely under the second feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
Claims (10)
1. A method for prolonging the service life of a carrier plate is characterized by comprising the following steps:
obtaining a carrier plate which is used for a preset number of times on a production line;
heating the carrier plate to release water vapor adsorbed by the carrier plate;
and arranging a waterproof protective layer on the surface of the heated carrier plate.
2. The method for extending the service life of a carrier plate according to claim 1, wherein said step of heat-treating said carrier plate comprises:
placing the carrier plate into a first environment;
heating the first environment to 180-240 ℃, and setting the heating time to be 5-10 min.
3. The method for extending a service life of a carrier plate according to claim 2, wherein said step of heat treating said carrier plate further comprises:
removing moisture released by the carrier plate into the first environment.
4. The method of extending the service life of a carrier plate of claim 3 wherein said step of removing moisture released by said carrier plate into said first environment comprises:
pumping out water vapor in the first environment through a molecular pump; and/or the presence of a gas in the atmosphere,
condensing water vapor in the first environment through a cold trap.
5. The method of claim 1, wherein the step of providing a water-proof protective layer on the surface of the carrier after heating comprises:
and plating an aluminum oxide material on the surface of the carrier plate to enable the aluminum oxide material to form the waterproof protective layer.
6. The method of claim 5, wherein the step of plating an aluminum oxide material on the surface of the carrier plate to form the water-proof protection layer comprises:
placing the heated carrier plate into a second environment;
introducing argon and oxygen into the second environment;
and plating an aluminum target material on the surface of the carrier plate by adopting a physical vapor deposition method so as to form the water-proof protective layer made of an aluminum oxide material on the surface of the carrier plate.
7. The method for prolonging the service life of the carrier plate according to claim 6, wherein the power density of the physical vapor deposition method is 100W/cm to 300W/cm; the deposition rate is 2 nm/s-6 nm/s; the deposition pressure is 0.3 pa-1.2 pa; the deposition temperature is 50-150 ℃.
8. The method of claim 6, wherein the flow of the argon introduced into the second environment is 500sccm to 1000sccm; and introducing the oxygen into the second environment at a flow rate of 50-1000 sccm.
9. The method of claim 6, wherein the predetermined number of times is greater than or equal to 1000 times.
10. The carrier plate is characterized by comprising a body, a conductive film layer covering the outside of the body and a waterproof protective layer covering the outside of the conductive film layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116949416A (en) * | 2023-07-31 | 2023-10-27 | 广东利元亨智能装备股份有限公司 | PECVD carrier plate processing method and PECVD equipment |
| CN117265496A (en) * | 2023-10-09 | 2023-12-22 | 隆基绿能科技股份有限公司 | Water vapor control methods, devices, equipment and media for physical vapor deposition |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100265206A1 (en) * | 2009-04-21 | 2010-10-21 | Industrial Technology Research Institute | Touch-sensing display apparatus and fabricating method thereof |
| CN107230514A (en) * | 2016-03-23 | 2017-10-03 | 张家港康得新光电材料有限公司 | Flexible conductive film |
| CN114059015A (en) * | 2021-11-01 | 2022-02-18 | 浙江爱旭太阳能科技有限公司 | Baking system and baking method of carrier plate |
| CN216738513U (en) * | 2021-12-24 | 2022-06-14 | 通威太阳能（安徽）有限公司 | PVD equipment and auxiliary device thereof |
-
2022
- 2022-08-12 CN CN202210968757.4A patent/CN115323345A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100265206A1 (en) * | 2009-04-21 | 2010-10-21 | Industrial Technology Research Institute | Touch-sensing display apparatus and fabricating method thereof |
| CN107230514A (en) * | 2016-03-23 | 2017-10-03 | 张家港康得新光电材料有限公司 | Flexible conductive film |
| CN114059015A (en) * | 2021-11-01 | 2022-02-18 | 浙江爱旭太阳能科技有限公司 | Baking system and baking method of carrier plate |
| CN216738513U (en) * | 2021-12-24 | 2022-06-14 | 通威太阳能（安徽）有限公司 | PVD equipment and auxiliary device thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116949416A (en) * | 2023-07-31 | 2023-10-27 | 广东利元亨智能装备股份有限公司 | PECVD carrier plate processing method and PECVD equipment |
| CN117265496A (en) * | 2023-10-09 | 2023-12-22 | 隆基绿能科技股份有限公司 | Water vapor control methods, devices, equipment and media for physical vapor deposition |
| CN117265496B (en) * | 2023-10-09 | 2025-10-10 | 隆基绿能科技股份有限公司 | Water vapor control method, device, equipment and medium for physical vapor deposition |
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Application publication date: 20221111 |