AR057250A1 - Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz organica - Google Patents
Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz organicaInfo
- Publication number
- AR057250A1 AR057250A1 ARP060105552A ARP060105552A AR057250A1 AR 057250 A1 AR057250 A1 AR 057250A1 AR P060105552 A ARP060105552 A AR P060105552A AR P060105552 A ARP060105552 A AR P060105552A AR 057250 A1 AR057250 A1 AR 057250A1
- Authority
- AR
- Argentina
- Prior art keywords
- organic matrix
- quantum
- intermediate band
- photosensible
- tunnel
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
- H10D62/812—Single quantum well structures
- H10D62/814—Quantum box structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Una pluralidad de puntos cuánticos tiene cada uno una estructura. Los puntos cuánticos están encastrados en una matriz orgánica. Al menos los puntos cuánticos y la matriz orgánica son semiconductores fotoconductores. La estructura de cada punto cuántico está dispuesta como una barrera de tunelizacion para requerir al portador de carga (un electron o un agujero) en una base de la barrera de tunelizacion en la matriz orgánica que realice un tunel mecánico cuántico para alcanzar el punto cuántico respectivo. Un primer estado cuántico en cada punto cuántico se encuentra entre un orbital molecular desocupado más bajo (LUMO) y un orbital molecular ocupado más alto(HOMO) de la matriz orgánica. Las funciones de onda del primer estado cuántico de la pluralidad de puntos cuánticos pueden superponerse para formar una banda intermedia.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/304,687 US7414294B2 (en) | 2005-12-16 | 2005-12-16 | Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AR057250A1 true AR057250A1 (es) | 2007-11-21 |
Family
ID=37892899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ARP060105552A AR057250A1 (es) | 2005-12-16 | 2006-12-15 | Dispositivo fotosensible de banda intermedia con puntos cuanticos que tienen barrera de formacion de tunel insertada en matriz organica |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7414294B2 (es) |
| EP (1) | EP1969652A1 (es) |
| JP (1) | JP5441415B2 (es) |
| KR (1) | KR101374437B1 (es) |
| CN (1) | CN101375425B (es) |
| AR (1) | AR057250A1 (es) |
| TW (1) | TWI434445B (es) |
| WO (1) | WO2007073467A1 (es) |
Families Citing this family (52)
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| WO2008033388A2 (en) * | 2006-09-12 | 2008-03-20 | Qd Vision, Inc. | A composite including nanoparticles, methods, and products including a composite |
| WO2008042859A2 (en) | 2006-09-29 | 2008-04-10 | University Of Florida Research Foundation, Inc. | Method and apparatus for infrared detection and display |
| US8030664B2 (en) * | 2006-12-15 | 2011-10-04 | Samsung Led Co., Ltd. | Light emitting device |
| WO2008128211A1 (en) * | 2007-04-13 | 2008-10-23 | Ziawatt Solar, Llc | Layers that impede diffusion of metals in group vi element-containing materials |
| US8525287B2 (en) | 2007-04-18 | 2013-09-03 | Invisage Technologies, Inc. | Materials, systems and methods for optoelectronic devices |
| WO2008131313A2 (en) | 2007-04-18 | 2008-10-30 | Invisage Technologies, Inc. | Materials systems and methods for optoelectronic devices |
| US20100044676A1 (en) | 2008-04-18 | 2010-02-25 | Invisage Technologies, Inc. | Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals |
| US7847364B2 (en) * | 2007-07-02 | 2010-12-07 | Alcatel-Lucent Usa Inc. | Flexible photo-detectors |
| JP2011518421A (ja) * | 2007-12-13 | 2011-06-23 | テクニオン・リサーチ・アンド・ディベロップメント・ファウンデーション・リミテッド | Iv−vi族の半導体コア−シェルナノ結晶を備える光起電力セル |
| EP2253033B1 (en) * | 2008-03-19 | 2019-06-12 | The Regents of the University of Michigan | Method for detection of infrared radiation using organic thin films |
| US8203195B2 (en) | 2008-04-18 | 2012-06-19 | Invisage Technologies, Inc. | Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom |
| US8350144B2 (en) * | 2008-05-23 | 2013-01-08 | Swaminathan Ramesh | Hybrid photovoltaic cell module |
| DE102008039361B4 (de) * | 2008-05-30 | 2025-02-06 | Pictiva Displays International Limited | Elektronische Vorrichtung |
| EP2172986B1 (en) | 2008-08-27 | 2013-08-21 | Honeywell International Inc. | Solar cell having hybrid hetero junction structure |
| EP2172987A1 (en) * | 2008-10-02 | 2010-04-07 | Honeywell International Inc. | Solar cell having tandem organic and inorganic structures and related system and method |
| US20100101636A1 (en) * | 2008-10-23 | 2010-04-29 | Honeywell International Inc. | Solar cell having supplementary light-absorbing material and related system and method |
| DE102009000813A1 (de) | 2009-02-12 | 2010-08-19 | Evonik Degussa Gmbh | Fluoreszenzkonversionssolarzelle I Herstellung im Plattengußverfahren |
| DE102009002386A1 (de) | 2009-04-15 | 2010-10-21 | Evonik Degussa Gmbh | Fluoreszenzkonversionssolarzelle - Herstellung im Spritzgussverfahren |
| DE102009027431A1 (de) | 2009-07-02 | 2011-01-05 | Evonik Degussa Gmbh | Fluoreszenzkonversionssolarzelle - Herstellung im Extrusionsverfahren oder im Coextrusionsverfahren |
| CN102576747B (zh) * | 2009-09-28 | 2016-04-13 | 株式会社村田制作所 | 纳米粒子材料的制造方法、纳米粒子材料以及光电转换器件 |
| JP5218927B2 (ja) * | 2009-09-28 | 2013-06-26 | 株式会社村田製作所 | ナノ粒子材料及び光電変換デバイス |
| WO2011052567A1 (ja) * | 2009-10-30 | 2011-05-05 | 住友化学株式会社 | 有機光電変換素子 |
| WO2011052569A1 (ja) * | 2009-10-30 | 2011-05-05 | 住友化学株式会社 | 有機光電変換素子 |
| WO2011064330A1 (de) * | 2009-11-27 | 2011-06-03 | Heliatek Gmbh | Organisches photoaktives bauelement mit kavitäts-schichtsystem |
| US20110198570A1 (en) * | 2010-02-12 | 2011-08-18 | Research Triangle Institute | Self assembled nano dots (sand) and non-self assembled nano-dots (nsand) device structures and fabrication methods thereof to create spacers for energy transfer |
| DE102010028180A1 (de) | 2010-04-26 | 2011-10-27 | Evonik Röhm Gmbh | Fluoreszenzkonversionssolarzelle - Herstellung im Extrusionslaminationsverfahren oder im Kleberlaminationsverfahren |
| DE102010028186A1 (de) | 2010-04-26 | 2011-10-27 | Evonik Röhm Gmbh | Fluoreszenzkonversionssolarzelle Lacke |
| SG185375A1 (en) | 2010-05-24 | 2012-12-28 | Univ Florida | Method and apparatus for providing a charge blocking layer on an infrared up-conversion device |
| US8916947B2 (en) | 2010-06-08 | 2014-12-23 | Invisage Technologies, Inc. | Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode |
| JP5586049B2 (ja) * | 2010-06-15 | 2014-09-10 | 株式会社ブイ・テクノロジー | 太陽電池 |
| DE102010038685A1 (de) | 2010-07-30 | 2012-02-02 | Evonik Röhm Gmbh | Fluoreszenzkonversionssolarzelle Herstellung im Plattengußverfahren |
| BR112013021606A2 (pt) * | 2011-02-28 | 2016-11-16 | Nanoholdings Llc | dispositivos de conversão ascendente com absorvedor de banda larga |
| JP5828340B2 (ja) * | 2011-03-24 | 2015-12-02 | 株式会社村田製作所 | 発光デバイス、及び該発光デバイスの製造方法 |
| US20120285521A1 (en) * | 2011-05-09 | 2012-11-15 | The Trustees Of Princeton University | Silicon/organic heterojunction (soh) solar cell and roll-to-roll fabrication process for making same |
| CN103733355B (zh) | 2011-06-30 | 2017-02-08 | 佛罗里达大学研究基金会有限公司 | 用于检测红外辐射的带有增益的方法和设备 |
| CN103198167B (zh) * | 2012-01-04 | 2015-10-14 | 北京邮电大学 | 半导体量子点平衡组份的计算方法 |
| JP2015537378A (ja) * | 2012-10-26 | 2015-12-24 | リサーチ トライアングル インスティテュート | 溶液プロセスによる量子ドットを利用した中間帯半導体、ヘテロ接合、及び光電子デバイス、並びに関連する方法 |
| CN103427049B (zh) * | 2013-08-21 | 2014-12-03 | 京东方科技集团股份有限公司 | 量子点发光元件的制造方法及量子点显示设备 |
| JP6233417B2 (ja) * | 2013-10-17 | 2017-11-22 | 株式会社村田製作所 | 発光デバイス |
| CN105658762B (zh) | 2013-10-17 | 2017-11-28 | 株式会社村田制作所 | 纳米粒子材料以及发光器件 |
| JP2015079870A (ja) * | 2013-10-17 | 2015-04-23 | 京セラ株式会社 | 太陽電池 |
| CN103984817B (zh) * | 2014-05-15 | 2017-02-01 | 中国石油大学(华东) | 二硫富瓦烯基染料敏化剂的分子设计方法 |
| EP3308113A4 (en) | 2015-06-11 | 2019-03-20 | University of Florida Research Foundation, Incorporated | MONODISPERSES, IR ABSORBENT NANOPARTICLES AND RELATED METHODS AND DEVICES |
| CN105449112B (zh) * | 2016-01-12 | 2018-04-20 | 纳晶科技股份有限公司 | 量子点电致发光器件、具有其的显示装置与照明装置 |
| US10428100B2 (en) | 2017-01-13 | 2019-10-01 | Uchicago Argonne, Llc | Substituted lead halide perovskite intermediate band absorbers |
| JP6670785B2 (ja) * | 2017-03-21 | 2020-03-25 | 株式会社東芝 | 放射線検出器 |
| GB2567642B (en) * | 2017-10-17 | 2020-08-26 | Crypto Quantique Ltd | Unique identifiers based on quantum effects |
| US10817780B2 (en) | 2017-10-29 | 2020-10-27 | Christopher J. Rourk | Electron transport gate circuits and methods of manufacture, operation and use |
| EP3780129A4 (en) * | 2018-04-10 | 2021-12-01 | Kao Corporation | LIGHT-ABSORBING LAYER, PHOTOELECTRIC CONVERTER AND SOLAR CELL |
| US10615574B2 (en) * | 2018-05-17 | 2020-04-07 | Wisconsin Alumni Research Foundation | Superlattice heterostructures formed with single crystalline semiconductor nanomembranes and amorphous tunneling barrier layers |
| US12389737B2 (en) | 2021-01-18 | 2025-08-12 | Canon Kabushiki Kaisha | Photoelectric conversion element |
| JP2023174170A (ja) | 2022-05-27 | 2023-12-07 | キヤノン株式会社 | 光電変換素子 |
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| US5079601A (en) * | 1989-12-20 | 1992-01-07 | International Business Machines Corporation | Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions |
| US6352777B1 (en) * | 1998-08-19 | 2002-03-05 | The Trustees Of Princeton University | Organic photosensitive optoelectronic devices with transparent electrodes |
| US6583436B2 (en) * | 2000-06-27 | 2003-06-24 | The Regents Of The University Of California | Strain-engineered, self-assembled, semiconductor quantum dot lattices |
| US6580027B2 (en) * | 2001-06-11 | 2003-06-17 | Trustees Of Princeton University | Solar cells using fullerenes |
| US6657378B2 (en) * | 2001-09-06 | 2003-12-02 | The Trustees Of Princeton University | Organic photovoltaic devices |
| US6773949B2 (en) * | 2001-07-31 | 2004-08-10 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods |
| EP1419519A4 (en) * | 2001-07-31 | 2006-12-13 | Univ Illinois | COUPLED QUANTUM DOT AND QUANTUM SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF |
| JP2005520701A (ja) * | 2002-03-19 | 2005-07-14 | ザ、リージェンツ、オブ、ザ、ユニバーシティ、オブ、カリフォルニア | 半導体‐ナノ結晶/複合ポリマー薄膜 |
| EP1537263B1 (en) | 2002-08-13 | 2010-11-17 | Massachusetts Institute Of Technology | Semiconductor nanocrystal heterostructures |
| EP1540741B1 (en) * | 2002-09-05 | 2014-10-29 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
| CA2551123A1 (en) * | 2004-01-20 | 2005-07-28 | Cyrium Technologies Incorporated | Solar cell with epitaxially grown quantum dot material |
| JP2005332945A (ja) * | 2004-05-19 | 2005-12-02 | Toyota Motor Corp | 太陽電池 |
| JP4905623B2 (ja) * | 2004-10-18 | 2012-03-28 | 富士通株式会社 | 太陽電池 |
| US20070137693A1 (en) * | 2005-12-16 | 2007-06-21 | Forrest Stephen R | Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix |
-
2005
- 2005-12-16 US US11/304,687 patent/US7414294B2/en active Active
-
2006
- 2006-12-07 JP JP2008545680A patent/JP5441415B2/ja not_active Expired - Fee Related
- 2006-12-07 EP EP06845056A patent/EP1969652A1/en not_active Withdrawn
- 2006-12-07 KR KR1020087017210A patent/KR101374437B1/ko not_active Expired - Fee Related
- 2006-12-07 WO PCT/US2006/046946 patent/WO2007073467A1/en not_active Ceased
- 2006-12-07 CN CN2006800528105A patent/CN101375425B/zh not_active Expired - Fee Related
- 2006-12-15 AR ARP060105552A patent/AR057250A1/es not_active Application Discontinuation
- 2006-12-15 TW TW095146992A patent/TWI434445B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101374437B1 (ko) | 2014-03-17 |
| US7414294B2 (en) | 2008-08-19 |
| JP2009520358A (ja) | 2009-05-21 |
| TWI434445B (zh) | 2014-04-11 |
| CN101375425A (zh) | 2009-02-25 |
| US20070162263A1 (en) | 2007-07-12 |
| CN101375425B (zh) | 2011-01-05 |
| EP1969652A1 (en) | 2008-09-17 |
| WO2007073467A1 (en) | 2007-06-28 |
| JP5441415B2 (ja) | 2014-03-12 |
| KR20080080374A (ko) | 2008-09-03 |
| TW200742145A (en) | 2007-11-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FA | Abandonment or withdrawal |