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Chaiyachad et al., 2022 - Google Patents

Direct observation of bandgap opening at the metasurface of nano-scale highly oriented pyrolytic graphite

Chaiyachad et al., 2022

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Document ID
18199672143035664063
Author
Chaiyachad S
Singsen S
Eknapakul T
Jindata W
Jaisuk C
Le Fevre P
Bertran F
Lu D
Huang Y
Nakajima H
Liewrian W
Fongkaew I
Meevasana W
Publication year

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By using angle-resolved photoemission spectroscopy (ARPES), we study the electronic structure of highly oriented pyrolytic graphite (HOPG). In contrast to the pristine HOPG, band gap opening of approximately 100 meV is directly observed at the surface of nano-scale …
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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies; Multistep manufacturing processes therefor characterised by the materials of which they are formed

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