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Mathis et al., 1999 - Google Patents

Threading dislocation reduction mechanisms in low-temperature-grown GaAs

Mathis et al., 1999

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Document ID
16712853652404483053
Author
Mathis S
Wu X
Romanov A
Speck J
Publication year
Publication venue
Journal of applied physics

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In these studies, we have investigated the role of low-temperature growth in the reduction of threading dislocation (TD) densities in large mismatch heteroepitaxy. Low-and high- temperature (LT) and (HT) GaAs growths on highly mismatched substrates were used to find …
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