[go: up one dir, main page]

Tamargo et al., 1988 - Google Patents

Structural characterization of GaAs/ZnSe interfaces

Tamargo et al., 1988

View PDF
Document ID
11600133722541570273
Author
Tamargo M
De Miguel J
Hwang D
Farrell H
Publication year
Publication venue
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

External Links

Snippet

We have studied, using reflection high energy electron diffraction (RHEED), the initial growth stages of ZnSe layers grown by molecular beam epitaxy (MBE) on GaAs exhibiting various surface terminations. The structural quality of the ZnSe layers was assessed by transmission …
Continue reading at pubs.aip.org (PDF) (other versions)

Classifications

    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L2021/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H01L2021/60022—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process using bump connectors, e.g. for flip chip mounting
    • H01L2021/60097—Applying energy, e.g. for the soldering or alloying process
    • H01L2021/60172—Applying energy, e.g. for the soldering or alloying process using static pressure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed material
    • C30B23/02—Epitaxial-layer growth

Similar Documents

Publication Publication Date Title
Tamargo et al. Structural characterization of GaAs/ZnSe interfaces
Regolini et al. Growth and characterization of strain compensated Si1− x− y epitaxial layers
Chen et al. Structure of CdTe (111) B grown by MBE on misoriented Si (001)
US5316615A (en) Surfactant-enhanced epitaxy
US5997638A (en) Localized lattice-mismatch-accomodation dislocation network epitaxy
Hunger et al. Heteroepitaxy of cuins2 on si (111)
Hiroyama et al. Effect of very thin SiC layer on heteroepitaxial growth of cubic GaN on Si (001)
Faurie et al. Heteroepitaxy of CdTe on GaAs and silicon substrates
Zalm et al. Silicon molecular beam epitaxy on gallium arsenide
Derrien et al. Silicide epilayers: recent developments and prospects for a Si-compatible technology
Liu et al. Molecular beam epitaxy of InSb on Si substrates using fluoride buffer layers
Bosch et al. Molecular beam epitaxy of InSb (110)
He et al. Synthesis of dislocation free Si y (Sn x C1− x) 1− y alloys by molecular beam deposition and solid phase epitaxy
Yamaguchi et al. Growth of GaAs/ErAs/GaAs structures by migration‐enhanced epitaxy
Maigné et al. Measurement of residual strain in InGaAs buffer layers
Feldman et al. Very high mobility HgTe films grown on GaAs substrates by molecular‐beam epitaxy
Sugiyama et al. Dislocation reduction in HgCdTe epilayers on GaAs by using CdTe/CdZnTe strained-layer superlattices in CdTe layers
Bensaada et al. Growth and structural properties of epitaxial Ga x In1− x P on InP
Pashley et al. Scanning tunneling microscopy studies of the GaAs (001) surface and the nucleation of ZnSe on GaAs (001)
Lee et al. Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy
US5628834A (en) Surfactant-enhanced epitaxy
Marichev et al. Effect of growth conditions at MOCVD on thickness uniformity of GaInAsP epilayers obtained on InP
Thordson et al. Surface Morphology and Structure of GaNxAs1− x
Miwa et al. ZnSe epitaxy on a GaAs (110) surface
Liu et al. Large mismatch heteroepitaxy of InSb on Si (1 1 1) substrates using CaF2 buffer layers