Zhou et al., 2023 - Google Patents
Interfacial variation in HfO2-based resistive switching devices with titanium electrodes under asymmetric bias operationZhou et al., 2023
- Document ID
- 10137153769309805168
- Author
- Zhou K
- Chen M
- Chang T
- Lin S
- Wang Y
- Zhang Y
- Yen P
- Shao K
- Huang H
- Huang J
- Sze S
- Publication year
- Publication venue
- Journal of Physics D: Applied Physics
External Links
Snippet
Resistance fluctuations are persistent and critical issues in memory device applications. In recent years, several investigations have been conducted to unravel such fluctuations to further improve the retention and endurance of random resistance access memory (RRAM) …
Classifications
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—BASIC ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H01L45/00—Solid state devices adapted for rectifying, amplifying, oscillating or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
- H01L45/04—Bistable or multistable switching devices, e.g. for resistance switching non-volatile memory
- H01L45/14—Selection of switching materials
- H01L45/145—Oxides or nitrides
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sahu et al. | Graphene oxide based synaptic memristor device for neuromorphic computing | |
| Rana et al. | Endurance and cycle-to-cycle uniformity improvement in tri-layered CeO2/Ti/CeO2 resistive switching devices by changing top electrode material | |
| Ye et al. | Enhanced resistive switching performance for bilayer HfO2/TiO2 resistive random access memory | |
| Bousoulas et al. | Investigating the origins of ultra-short relaxation times of silver filaments in forming-free SiO2-based conductive bridge memristors | |
| Gao et al. | Conductance quantization in a Ag filament-based polymer resistive memory | |
| Simanjuntak et al. | Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications | |
| Huang et al. | HfO2/Al2O3 multilayer for RRAM arrays: a technique to improve tail-bit retention | |
| Yeom et al. | Transparent resistive switching memory using aluminum oxide on a flexible substrate | |
| Park et al. | Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes | |
| Du et al. | Controllable volatile to nonvolatile resistive switching conversion and conductive filaments engineering in Cu/ZrO2/Pt devices | |
| Palhares et al. | Oxygen vacancy engineering of TaO x-based resistive memories by Zr doping for improved variability and synaptic behavior | |
| Kim et al. | Sol-gel-processed amorphous-phase ZrO2 based resistive random access memory | |
| Baldi et al. | Logic with memory: and gates made of organic and inorganic memristive devices | |
| Chandrasekaran et al. | Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer | |
| Liang et al. | Transparent HfO x-based memristor with robust flexibility and synapse characteristics by interfacial control of oxygen vacancies movement | |
| Aluguri et al. | Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending condition | |
| Zhang et al. | Tolerance of intrinsic device variation in fuzzy restricted Boltzmann machine network based on memristive nano-synapses | |
| Lee et al. | Improved analog switching characteristics of Ta2O5-based memristor using indium tin oxide buffer layer for neuromorphic computing | |
| Jain et al. | Switching characteristics in TiO2/ZnO double layer resistive switching memory device | |
| Park et al. | Analysis of the thermal degradation effect on a HfO2-based memristor synapse caused by oxygen affinity of a top electrode metal and on a neuromorphic system | |
| Cho et al. | Conduction mechanism and synaptic behaviour of interfacial switching AlOσ-based RRAM | |
| Kang et al. | Dual resistive switching performance derived from ionic migration in halide perovskite based memory | |
| Firdos et al. | Ab initio study of ceria films for resistive switching memory applications | |
| Chu et al. | Multistate data storage in solution-processed NiO-based resistive switching memory | |
| Alamgir et al. | The effect of different oxygen exchange layers on TaOx based RRAM devices |