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Bosch et al., 1985 - Google Patents

Molecular beam epitaxy of InSb (110)

Bosch et al., 1985

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Document ID
8408368415760660708
Author
Bosch A
van Welzenis R
Schannen O
Publication year
Publication venue
Journal of applied physics

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Molecular beam homoepitaxy of InSb on the nonpolar (110) face is reported for the first time. Growth conditions and substrate preparation techniques are discussed. With an In beam flux of 3× 1014 at./cm2 sa growth rate of 0.72 μm/h is obtained, hence the sticking coefficient of …
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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