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Mikamura et al., 2016 - Google Patents

4H-SiC V-groove trench MOSFETs with low specific on-state resistance and high reliability

Mikamura et al., 2016

Document ID
6660474705469186678
Author
Mikamura Y
Uchida K
Saitoh Y
Hiyoshi T
Masuda T
Tsuno T
Publication year
Publication venue
ECS Transactions

External Links

Snippet

The originally structured 4H-SiC V-groove trench MOSFET with {0-33-8} face for the trench sidewalls has been proposed. The inclined trench structure can be fabricated by the thermochemical chlorine etching, resulting in the smooth low damage surface …
Continue reading at iopscience.iop.org (other versions)

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