[go: up one dir, main page]

Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

  • Letter
  • Published:

Emergence of superlattice Dirac points in graphene on hexagonal boron nitride

Abstract

The Schrödinger equation dictates that the propagation of nearly free electrons through a weak periodic potential results in the opening of bandgaps near points of the reciprocal lattice known as Brillouin zone boundaries1. However, in the case of massless Dirac fermions, it has been predicted that the chirality of the charge carriers prevents the opening of a bandgap and instead new Dirac points appear in the electronic structure of the material2,3. Graphene on hexagonal boron nitride exhibits a rotation-dependent moiré pattern4,5. Here, we show experimentally and theoretically that this moiré pattern acts as a weak periodic potential and thereby leads to the emergence of a new set of Dirac points at an energy determined by its wavelength. The new massless Dirac fermions generated at these superlattice Dirac points are characterized by a significantly reduced Fermi velocity. Furthermore, the local density of states near these Dirac cones exhibits hexagonal modulation due to the influence of the periodic potential.

This is a preview of subscription content, access via your institution

Access options

Buy this article

39,95 €

Prices may be subject to local taxes which are calculated during checkout

Figure 1: Graphene device schematic and STM moiré images.
Figure 2: Density of states of graphene on hBN showing new superlattice Dirac points.
Figure 3: Gate dependence of graphene density of states near the superlattice Dirac points for a 13.4 nm moiré pattern.
Figure 4: Experimental and theoretical images of LDOS for a long wavelength moiré pattern.

Similar content being viewed by others

References

  1. Ashcroft, N. W. & Mermin, N.D. Solid State Physics (Brooks Cole, 1976).

    MATH  Google Scholar 

  2. Park, C-H., Yang, L., Son, Y-W., Cohen, M. L. & Louie, S. G. Anisotropic behaviours of massless Dirac fermions in graphene under periodic potentials. Nature Phys. 4, 213–217 (2008).

    Article  ADS  Google Scholar 

  3. Park, C-H., Yang, L., Son, Y-W., Cohen, M. L. & Louie, S. G. New generation of massless Dirac fermions in graphene under external periodic potentials. Phys. Rev. Lett. 101, 126804 (2008).

    Article  ADS  Google Scholar 

  4. Xue, J. et al. Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. Nature Mater. 10, 282–285 (2011).

    Article  ADS  Google Scholar 

  5. Decker, R. et al. Local electronic properties of graphene on a BN substrate via scanning tunneling microscopy. Nano Lett. 11, 2291–2295 (2011).

    Article  ADS  Google Scholar 

  6. Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S. & Geim, A. K. The electronic properties of graphene. Rev. Mod. Phys. 81, 109–162 (2009).

    Article  ADS  Google Scholar 

  7. Katsnelson, M. I., Novoselov, K. S. & Geim, A. K. Chiral tunnelling and the Klein paradox in graphene. Nature Phys. 2, 620–625 (2006).

    Article  ADS  Google Scholar 

  8. Klein, O. Die Reflexion von Elektronen an einem Potentialsprung nach der relativistischen Dynamik von Dirac. Z. Phys. 53, 157–165 (1929).

    Article  ADS  Google Scholar 

  9. Stander, N., Huard, B. & Goldhaber-Gordon, D. Evidence for Klein tunneling in graphene p–n junctions. Phys. Rev. Lett. 102, 026807 (2009).

    Article  ADS  Google Scholar 

  10. Young, A. F. & Kim, P. Quantum interference and Klein tunnelling in graphene heterojunctions. Nature Phys. 5, 222–226 (2009).

    Article  ADS  Google Scholar 

  11. Barbier, M., Peeters, F. M., Vasilopoulos, P. & Pereira, J. M. Dirac and Klein-Gordon particles in one-dimensional periodic potentials. Phys. Rev. B 77, 115446 (2008).

    Article  ADS  Google Scholar 

  12. Brey, L. & Fertig, H. A. Emerging zero modes for graphene in a periodic potential. Phys. Rev. Lett. 103, 046809 (2009).

    Article  ADS  Google Scholar 

  13. Sun, J., Fertig, H. A. & Brey, L. Effective magnetic fields in graphene superlattices. Phys. Rev. Lett. 105, 156801 (2010).

    Article  ADS  Google Scholar 

  14. Burset, P., Levy Yeyati, A., Brey, L. & Fertig, H. A. Transport in superlattices on single-layer graphene. Phys. Rev. B 83, 195434 (2011).

    Article  ADS  Google Scholar 

  15. Ortix, C., Yang, L. & van den Brink, J. Graphene on incommensurate substrates: trigonal warping and emerging Dirac cone replicas with halved group velocity. Preprint at http://arxiv.org/abs/1111.0399 (2011).

  16. Marchini, S., Günther, S. & Wintterlin, J. Scanning tunneling microscopy of graphene on Ru(0001). Phys. Rev. B 76, 075429 (2007).

    Article  ADS  Google Scholar 

  17. Vásquez de Parga, A. L. et al. Periodically rippled graphene: Growth and spatially resolved electronic structure. Phys. Rev. Lett. 100, 056807 (2008).

    Article  ADS  Google Scholar 

  18. Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nature Nanotech. 5, 722–726 (2010).

    Article  ADS  Google Scholar 

  19. Dagotto, E. Correlated electrons in high-temperature superconductors. Rev. Mod. Phys. 66, 763–840 (1994).

    Article  ADS  Google Scholar 

  20. Brar, V. W. et al. Observation of carrier-density-dependent many-body effects in graphene via tunneling spectroscopy. Phys. Rev. Lett. 104, 036805 (2010).

    Article  ADS  Google Scholar 

Download references

Acknowledgements

The work at Arizona was partially supported by the US Army Research Laboratory and the US Army Research Office under contract/grant number W911NF-09-1-0333 and the National Science Foundation CAREER award DMR-0953784, EECS-0925152 and DMR-0706319. J.D.S-Y. and P.J-H. were primarily supported by the US Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award DE-SC0001819 and partly by the 2009 US Office of Naval Research Multi University Research Initiative (MURI) on Graphene Advanced Terahertz Engineering (Gate) at MIT, Harvard and Boston University. P.J. acknowledges the support of the Swiss Center of Excellence MANEP.

Author information

Authors and Affiliations

Authors

Contributions

M.Y., J.X., D.C. and B.J.L. performed the STM experiments of the graphene on hBN. M.Y. and D.C. fabricated the CVD graphene devices. J.D.S-Y. fabricated the devices on single crystal hBN. K.W. and T.T. provided the single crystal hBN. P.J. performed the theoretical calculations. P.J-H. and B.J.L. conceived and provided advice on the experiments. All authors participated in the data discussion and writing of the manuscript.

Corresponding author

Correspondence to Brian J. LeRoy.

Ethics declarations

Competing interests

The authors declare no competing financial interests.

Supplementary information

Supplementary Information

Supplementary Information (PDF 997 kb)

Rights and permissions

Reprints and permissions

About this article

Cite this article

Yankowitz, M., Xue, J., Cormode, D. et al. Emergence of superlattice Dirac points in graphene on hexagonal boron nitride. Nature Phys 8, 382–386 (2012). https://doi.org/10.1038/nphys2272

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue date:

  • DOI: https://doi.org/10.1038/nphys2272

This article is cited by

Search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing